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SN74ABT5401DWG4

SN74ABT5401DWG4

  • 厂商:

    BURR-BROWN(德州仪器)

  • 封装:

    SOIC28_300MIL

  • 描述:

    IC BUFFER INVERT 5.5V 28SOIC

  • 数据手册
  • 价格&库存
SN74ABT5401DWG4 数据手册
SN54ABT5401, SN74ABT5401 11-BIT LINE/MEMORY DRIVERS WITH 3-STATE OUTPUTS SCBS235B – JUNE 1992 – REVISED JANUARY 1997 D D D D D D SN54ABT5401 . . . JT PACKAGE SN74ABT5401 . . . DW PACKAGE (TOP VIEW) Output Ports Have Equivalent 25-Ω Series Resistors, So No External Resistors Are Required State-of-the-Art EPIC-ΙΙB  BiCMOS Design Significantly Reduces Power Dissipation Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounce) < 1 V at VCC = 5 V, TA = 25°C Typical VOLV (Output Undershoot) < 0.5 V at VCC = 5 V, TA = 25°C Package Options Include Plastic Small-Outline (DW) Package, Ceramic Chip Carriers (FK), and DIPs (JT) Y1 Y2 Y3 Y4 Y5 Y6 GND GND Y7 Y8 Y9 Y10 Y11 OE1 description These 11-bit buffers and line drivers are designed specifically to improve both the performance and density of 3-state memory address drivers, clock drivers, and bus-oriented receivers and transmitters. 1 28 2 27 3 26 4 25 5 24 6 23 7 22 8 21 9 20 10 19 11 18 12 17 13 16 14 15 D1 D2 D3 D4 D5 D6 VCC VCC D7 D8 D9 D10 D11 OE2 D4 D5 D6 VCC VCC D7 D8 SN54ABT5401 . . . FK PACKAGE (TOP VIEW) The 3-state control gate is a 2-input AND gate with active-low inputs so that if either output-enable (OE1 or OE2) input is high, all 11 outputs are in the high-impedance state. These devices provide inverted data. D3 D2 D1 Y1 Y2 Y3 Y4 The outputs, which are designed to source or sink up to 12 mA, include equivalent 25-Ω series resistors to reduce overshoot and undershoot. 4 3 2 1 28 27 26 25 6 24 7 23 8 22 9 21 10 20 11 19 12 13 14 15 16 17 18 D9 D10 D11 OE2 OE1 Y11 Y10 Y5 Y6 GND GND Y7 Y8 Y9 To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver. 5 The SN54ABT5401 is characterized for operation over the full military temperature range of –55°C to 125°C. The SN74ABT5401 is characterized for operation from –40°C to 85°C. FUNCTION TABLE INPUTS OE1 OE2 D OUTPUT Y L L L H L L H L H X X Z X H X Z Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. EPIC-ΙΙB is a trademark of Texas Instruments Incorporated. Copyright  1997, Texas Instruments Incorporated UNLESS OTHERWISE NOTED this document contains PRODUCTION DATA information current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 1 SN54ABT5401, SN74ABT5401 11-BIT LINE/MEMORY DRIVERS WITH 3-STATE OUTPUTS SCBS235B – JUNE 1992 – REVISED JANUARY 1997 logic symbol† 14 OE1 OE2 D1 D2 D3 D4 D5 D6 D7 D8 D9 D10 D11 logic diagram (positive logic) & OE1 EN 15 28 27 1 OE2 1 2 26 3 25 4 24 5 23 6 20 9 19 10 18 11 17 12 16 13 D1 14 15 28 1 Y1 Y1 Y2 Y3 To Ten Other Channels Y4 Y5 Y6 Y7 Y8 Y9 Y10 Y11 † This symbol is in accordance with ANSI/IEEE Std 91-1984 and IEC Publication 617-12. Pin numbers shown are for the DW and JT packages. absolute maximum ratings over operating free-air temperature range (unless otherwise noted)‡ Supply voltage range, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.5 V to 7 V Input voltage range, VI (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.5 V to 7 V Voltage range applied to any output in the high or power-off state, VO . . . . . . . . . . . . . . . . . . . –0.5 V to 5.5 V Current into any output in the low state, IO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA Input clamp current, IIK (VI < 0) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –18 mA Output clamp current, IOK (VO < 0) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50 mA Package thermal impedance, θJA (see Note 2): DW package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78°C/W Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to 150°C ‡ Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTES: 1. The input and output negative-voltage ratings may be exceeded if the input and output clamp-current ratings are observed. 2. The package thermal impedance is calculated in accordance with EIA/JEDEC Std JESD51. 2 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 SN54ABT5401, SN74ABT5401 11-BIT LINE/MEMORY DRIVERS WITH 3-STATE OUTPUTS SCBS235B – JUNE 1992 – REVISED JANUARY 1997 recommended operating conditions (see Note 3) SN54ABT5401 VCC VIH Supply voltage VIL VI Low-level input voltage IOH IOL High-level output current ∆t/∆v Input transition rise or fall rate High-level input voltage SN74ABT5401 MIN MAX MIN MAX 4.5 5.5 4.5 5.5 2 2 0.8 Input voltage 0 Low-level output current Outputs enabled TA Operating free-air temperature NOTE 3: Unused inputs must be held high or low to prevent them from floating. –55 0 V V 0.8 VCC –12 UNIT VCC –12 V V mA 12 12 mA 10 10 ns/V 85 °C 125 –40 electrical characteristics over recommended operating free-air temperature range (unless otherwise noted) PARAMETER VIK VOH TEST CONDITIONS SN54ABT5401 –1.2 –1.2 MIN MAX SN74ABT5401 MIN II = –18 mA IOH = –1 mA 3.35 3.7 3.3 3.35 VCC = 5 V, IOH = –1 mA IOH = –3 mA 3.85 4.2 3.8 3.85 3 3.1 IOH = –12 mA IOL = 8 mA 2.6 VCC = 4 4.5 5V Vhys II TA = 25°C TYP† MAX VCC = 4.5 V, VCC = 4.5 V, VCC = 4 4.5 5V VOL MIN MAX –1.2 UNIT V V 2.6 0.8 0.65 IOL = 12 mA 0.8 100 V mV ±1 ±1 ±1 µA VCC = 5.5 V, VCC = 5.5 V, VI = VCC or GND VO = 2.7 V VCC = 5.5 V, VCC = 0, VO = 0.5 V VI or VO ≤ 4.5 V ICEX VCC = 5.5 V, VO = 5.5 V Outputs high IO IOS‡ VCC = 5.5 V, VCC = 5.5 V, VO = 2.5 V VO = 0 VCC = 5.5 V, IO = 0, VI = VCC or GND Outputs high 5 50 50 50 µA ICC Outputs low 36 45 45 45 mA 1 50 50 50 µA 1.5 1.5 1.5 0.05 0.05 0.05 1.5 1.5 1.5 IOZH IOZL Ioff Data inputs ∆ICC§ Control inputs Ci Co Outputs disabled 50 50 µA –50 –50 µA ±100 µA 50 µA ±100 50 –25 –45 –50 VCC = 5.5 V, Outputs enabled One input at 3.4 V,, Other inputs at Outputs disabled VCC or GND VCC = 5.5 V, One input at 3.4 V, Other inputs at VCC or GND VI = 2.5 V or 0.5 V VO = 2.5 V or 0.5 V 50 –50 50 –100 –25 –100 –25 –100 mA –200 –50 –200 –50 –200 mA mA 3 pF 8 pF † All typical values are at VCC = 5 V. ‡ Not more than one output should be tested at a time, and the duration of the test should not exceed one second. § This is the increase in supply current for each input that is at the specified TTL voltage level rather than VCC or GND. PRODUCT PREVIEW information concerns products in the formative or design phase of development. Characteristic data and other specifications are design goals. Texas Instruments reserves the right to change or discontinue these products without notice. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 3 SN54ABT5401, SN74ABT5401 11-BIT LINE/MEMORY DRIVERS WITH 3-STATE OUTPUTS SCBS235B – JUNE 1992 – REVISED JANUARY 1997 switching characteristics over recommended ranges of supply voltage and operating free-air temperature, CL = 50 pF (unless otherwise noted) (see Figure 1) FROM (INPUT) TO (OUTPUT) tPLH tPHL D Y tPZH tPZL OE Y tPHZ tPLZ OE Y PARAMETER VCC = 5 V, TA = 25°C SN54ABT5401 MIN TYP MAX MIN MAX MIN MAX 2 4.5 6.1 2 7 2 6.9 1.5 4.4 5.2 1.5 5.9 1.5 5.7 2.5 5.7 6.6 2.5 8.6 2.5 8.5 2 4.4 5.5 2 6.9 2 6.8 1.5 3.6 4.4 1.5 5.5 1.5 5.2 1.5 4.2 5.4 1.5 7.4 1.5 6.9 PRODUCT PREVIEW information concerns products in the formative or design phase of development. Characteristic data and other specifications are design goals. Texas Instruments reserves the right to change or discontinue these products without notice. 4 POST OFFICE BOX 655303 SN74ABT5401 • DALLAS, TEXAS 75265 UNIT ns ns ns SN54ABT5401, SN74ABT5401 11-BIT LINE/MEMORY DRIVERS WITH 3-STATE OUTPUTS SCBS235B – JUNE 1992 – REVISED JANUARY 1997 PARAMETER MEASUREMENT INFORMATION 7V S1 500 Ω From Output Under Test Open GND CL = 50 pF (see Note A) 500 Ω TEST S1 tPLH/tPHL tPLZ/tPZL tPHZ/tPZH Open 7V Open LOAD CIRCUIT 3V Timing Input 1.5 V 0V tw tsu 3V Input 1.5 V th 3V 1.5 V Data Input 1.5 V 1.5 V 0V 0V VOLTAGE WAVEFORMS PULSE DURATION VOLTAGE WAVEFORMS SETUP AND HOLD TIMES 3V Input 1.5 V 0V 1.5 V 1.5 V VOL tPLH tPHL VOH Output 1.5 V 1.5 V VOL 1.5 V 0V tPLZ Output Waveform 1 S1 at 7 V (see Note B) VOH Output 1.5 V tPZL tPHL tPLH 3V Output Control 1.5 V Output Waveform 2 S1 at Open (see Note B) VOLTAGE WAVEFORMS PROPAGATION DELAY TIMES INVERTING AND NONINVERTING OUTPUTS 1.5 V tPZH 3.5 V VOL + 0.3 V VOL tPHZ 1.5 V VOH – 0.3 V VOH ≈0V VOLTAGE WAVEFORMS ENABLE AND DISABLE TIMES LOW- AND HIGH-LEVEL ENABLING NOTES: A. CL includes probe and jig capacitance. B. Waveform 1 is for an output with internal conditions such that the output is low except when disabled by the output control. Waveform 2 is for an output with internal conditions such that the output is high except when disabled by the output control. C. All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr ≤ 2.5 ns, tf ≤ 2.5 n D. The outputs are measured one at a time with one transition per measurement. Figure 1. Load Circuit and Voltage Waveforms POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 5 IMPORTANT NOTICE Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability. TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except those mandated by government requirements. CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL APPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER CRITICAL APPLICATIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TO BE FULLY AT THE CUSTOMER’S RISK. In order to minimize risks associated with the customer’s applications, adequate design and operating safeguards must be provided by the customer to minimize inherent or procedural hazards. TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other intellectual property right of TI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. TI’s publication of information regarding any third party’s products or services does not constitute TI’s approval, warranty or endorsement thereof. Copyright  1998, Texas Instruments Incorporated
SN74ABT5401DWG4 价格&库存

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