SCDS113A – DECEMBER 2002 – REVISED DECEMBER 2002
D Low and Flat On-State Resistance (ron)
D
D
D
D
D
D
D
D High-Bandwidth Data Path (Up To 533 MHz)
D Low Power Consumption
Characteristics Over Operating Range
(ron = 4 Ω Typical)
0- to 5-V Rail-to-Rail Switching on Data I/O
Ports
VCC Operating Range From 2.3 V to 3.6 V
TTL- and LVTTL-Compatible Data I/O Ports
LVTTL-Compatible Control Inputs
Bidirectional Data Flow With Near-Zero
Propagation Delay
Low Input/Output Capacitance Minimizes
Loading and Signal Distortion
(Cio = 3.5 pF Typical)
Fast Switching Speeds (fOE = 20 MHz Max)
(ICC = 250 µA Typical)
D Ioff on A and B Port for Partial-Power-Down
D
D
D
D
Operation
Data and Control Inputs Provide
Undershoot Clamp Diodes
Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
ESD Protection Exceeds JESD 22
– 2000-V Human-Body Model (A114-A)
– 1000-V Charged-Device Model (C101)
Supports Both Digital and Analog
Applications: PCI Hot Plug, Hot Docking,
Memory Interleaving, Bus Isolation, and
Low-Distortion Signal Gating
D OR PW PACKAGE
(TOP VIEW)
1OE
1A
1B
GND
1
8
2
7
3
6
4
5
VCC
2OE
2B
2A
description/ordering information
Texas Instruments bus switches provide high-performance, low-power replacements for standard bus-interface
devices when signal buffering (current drive) is not required. The CB3Q family of high-bandwidth bus switches
offers low and flat on-state resistance (ron), 0- to 5-V rail-to-rail switching on the data input/output (I/O) ports,
and low data I/O capacitance (Cio) to minimize capacitive loading and signal distortion on the data bus.
Specifically designed to support high-bandwidth applications, the CB3Q family provides an optimized interface
solution ideally suited for broadband communications, networking, and data-intensive computing systems.
The SN74CB3Q3306 is a dual FET bus switch featuring independent line switches. Each switch is enabled
when the associated output-enable (OE) input is low, allowing bidirectional data flow between ports A and B.
Each switch is disabled when the associated OE input is high, producing a high-impedance state between ports
A and B. The very low ron of the switch allows connections to be made with minimal propagation delay.
ORDERING INFORMATION
–40°C to 85°C
ORDERABLE
PART NUMBER
PACKAGE†
TA
SOIC – D
Tube
SN74CB3Q3306D
Tape and reel
SN74CB3Q3306DR
TOP-SIDE
MARKING
BU306
TSSOP – PW
Tape and reel
SN74CB3Q3306PWR
BU306
† Package drawings, standard packing quantities, thermal data, symbolization, and PCB design
guidelines are available at www.ti.com/sc/package.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Copyright 2002, Texas Instruments Incorporated
!"#$%&'(!$" !) *+%%,"( ') $# -+./!*'(!$" 0'(,
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)('"0'%0 3'%%'"(4 %$0+*(!$" -%$*,))!"5 0$,) "$( ",*,))'%!/4 !"*/+0,
(,)(!"5 $# '// -'%'&,(,%)
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1
SCDS113A – DECEMBER 2002 – REVISED DECEMBER 2002
description/ordering information (continued)
This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry prevents damaging
current backflow through the device when it is powered down.
To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup
resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.
FUNCTION TABLE
(each bus switch)
INPUT
OE
FUNCTION
L
A port = B port
H
Disconnect
logic diagram (positive logic)
1A
2
3
1B
1
1OE
5
6
2B
2A
7
2OE
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)†
Supply voltage range, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.5 V to 4.6 V
Input voltage range, VI (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.5 V to 6.5 V
Continuous channel current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128 mA
Input clamp current, IIK (VI/O < 0) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50 mA
Package thermal impedance, θJA (see Note 2): D package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97°C/W
PW package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 149°C/W
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to 150°C
† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. The input and output negative-voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
2. The package thermal impedance is calculated in accordance with JESD 51-7.
recommended operating conditions (see Note 3)
VCC
Supply voltage
VIH
High le el control inp
High-level
inputt voltage
oltage
VCC = 2.3 V to 2.7 V
VCC = 2.7 V to 3.6 V
VIL
Lo le el control inp
Low-level
inputt voltage
oltage
VCC = 2.3 V to 2.7 V
VCC = 2.7 V to 3.6 V
MIN
MAX
2.3
3.6
UNIT
V
1.7
V
2
0.7
0.8
V
TA
Operating free-air temperature
–40
85
°C
NOTE 3: All unused control inputs of the device must be held at VCC or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
2
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SCDS113A – DECEMBER 2002 – REVISED DECEMBER 2002
electrical characteristics over recommended operating free-air temperature range (unless
otherwise noted)
PARAMETER
VIK
IIN
Control inputs
IOZ‡
Ioff
ICC
∆ICC§
Control inputs
TEST CONDITIONS
MIN
MAX
UNIT
VCC = 3.6 V,
VCC = 3.6 V,
II = –18 mA
VIN = 5.5 V or GND
–1.8
V
±1
µA
VCC = 3.6 V,
VCC = 0,
VI/O = VCC or GND
VI/O = 0 to 5.5 V
±1
µA
±1
µA
VCC = 3.6 V,
VCC = 3.6 V,
II/O = 0,
One input at 3 V,
700
µA
25
µA
0.03
0.1
mA/
MHz
VIN = VCC or GND
Other inputs at VCC or GND
250
VCC = 3.6 V, A and B pins open,
Per OE control input switching at 50% duty cycle
ICCD¶
Cin
Control inputs
Cio(OFF)
VIN = 5.5 V, 3.3 V, or 0,
VI/O = 5.5 V, 3.3 V, or 0,
VCC = 3.3 V
VCC = 3.3 V,
Cio(ON)
VI/O = 5.5 V, 3.3 V, or 0,
VCC = 3.3 V,
VI = 0,
VCC = 2.3 V,
TYP at VCC = 2.5 V
ron#
TYP†
VI = 1.7 V,
VI = 0,
VCC = 3 V
2.5
3.5
pF
Switch off, OE = VCC
3.5
5
pF
Switch on, OE = GND
8
10.5
pF
IO = 30 mA
IO = –15 mA
4
8
5
9
IO = 30 mA
IO = –15 mA
4
6
Ω
VI = 2.4 V,
5
8
VIN and IIN refer to control inputs. VI, VO, II, and IO refer to data pins.
† All typical values are at VCC = 3.3 V (unless otherwise noted), TA = 25°C.
‡ For I/O ports, the parameter IOZ includes the input leakage current.
§ This is the increase in supply current for each input that is at the specified TTL voltage level, rather than VCC or GND.
¶ This parameter specifies the dynamic power-supply current associated with the operating frequency of a single OE control input. The total ICC
can be calculated with the following formula: Total ICC = ICC + (ICCD × 1OE frequency) + (ICCD × 2OE frequency).
# Measured by the voltage drop between the A and B terminals at the indicated current through the switch. On-state resistance is determined by
the lower of the voltages of the two (A or B) terminals.
switching characteristics over recommended operating free-air temperature range (unless
otherwise noted) (see Figure 3)
PARAMETER
fOE||
tpdk
ten
FROM
(INPUT)
TO
(OUTPUT)
VCC = 2.5 V
± 0.2 V
MIN
MAX
VCC = 3.3 V
± 0.3 V
MIN
UNIT
MAX
OE
A or B
10
20
MHz
A or B
B or A
0.2
0.2
ns
OE
A or B
5.5
ns
1.5
6.5
1.5
tdis
A or B
1
6
1
5
ns
OE
|| Maximum toggle frequency for OE control input (VO > VCC, VI = 5 V, RL ≥ 1 MΩ, CL = 0)
k The propagation delay is the calculated RC time constant of the typical on-state resistance of the switch and the specified load capacitance when
driven by an ideal voltage source (zero output impedance).
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3
SCDS113A – DECEMBER 2002 – REVISED DECEMBER 2002
TYPICAL ron
vs
VI
ron – On-State Resistance – Ω
16
VCC = 3.3 V
TA = 25°C
IO = –15 mA
14
12
10
8
6
4
2
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VI – V
Figure 1. Typical ron vs VI, VCC = 3.3 V and IO = –15 mA
TYPICAL ICC
vs
OE SWITCHING FREQUENCY
12
VCC = 3.3 V
TA = 25°C
ICC – mA
10
8
6
4
All OE Switching
One OE Switching
2
0
0
2
4
6
8
10
12
14
16
OE Switching Frequency – MHz
Figure 2. Typical ICC vs OE Switching Frequency, VCC = 3.3 V
4
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18
20
SCDS113A – DECEMBER 2002 – REVISED DECEMBER 2002
PARAMETER MEASUREMENT INFORMATION
2 × VCC
RL
From Output
Under Test
S1
Open
GND
CL
(see Note A)
TEST
S1
tPLH/tPHL
tPLZ/tPZL
tPHZ/tPZH
Open
2 × VCC
GND
RL
LOAD CIRCUIT
VCC
CL
RL
V∆
2.5 V ± 0.2 V
3.3 V ± 0.3 V
30 pF
50 pF
500 Ω
500 Ω
0.15 V
0.3 V
VCC
Timing Input
VCC/2
0V
tw
tsu
VCC
VCC/2
Input
VCC/2
th
VCC
VCC/2
Data Input
VCC/2
0V
0V
VOLTAGE WAVEFORMS
PULSE DURATION
VOLTAGE WAVEFORMS
SETUP AND HOLD TIMES
VCC
VCC/2
Input
VCC/2
0V
tPHL
tPLH
VOH
VCC/2
Output
VCC/2
VOL
VOH
Output
VCC/2
VCC/2
VOL
VOLTAGE WAVEFORMS
PROPAGATION DELAY TIMES
INVERTING AND NONINVERTING OUTPUTS
VCC/2
Output
Waveform 2
S1 at GND
(see Note B)
VCC/2
0V
t
Output PZL
Waveform 1
S1 at 2 × VCC
(see Note B)
tPLH
tPHL
VCC
Output
Control
tPLZ
VCC
VCC/2
VOL + V∆
VOL
tPHZ
tPZH
VCC/2
VOH – V∆
VOH
≈0 V
VOLTAGE WAVEFORMS
ENABLE AND DISABLE TIMES
LOW- AND HIGH-LEVEL ENABLING
NOTES: A. CL includes probe and jig capacitance.
B. Waveform 1 is for an output with internal conditions such that the output is low except when disabled by the output control.
Waveform 2 is for an output with internal conditions such that the output is high except when disabled by the output control.
C. All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr ≤ 2 ns, tf ≤ 2 ns.
D. The outputs are measured one at a time with one transition per measurement.
E. tPLZ and tPHZ are the same as tdis.
F. tPZL and tPZH are the same as ten.
G. tPLH and tPHL are the same as tpd.
H. All parameters and waveforms are not applicable to all devices.
Figure 3. Load Circuit and Voltage Waveforms
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5
MECHANICAL DATA
MSOI002B – JANUARY 1995 – REVISED SEPTEMBER 2001
D (R-PDSO-G**)
PLASTIC SMALL-OUTLINE PACKAGE
8 PINS SHOWN
0.020 (0,51)
0.014 (0,35)
0.050 (1,27)
8
0.010 (0,25)
5
0.008 (0,20) NOM
0.244 (6,20)
0.228 (5,80)
0.157 (4,00)
0.150 (3,81)
Gage Plane
1
4
0.010 (0,25)
0°– 8°
A
0.044 (1,12)
0.016 (0,40)
Seating Plane
0.010 (0,25)
0.004 (0,10)
0.069 (1,75) MAX
PINS **
0.004 (0,10)
8
14
16
A MAX
0.197
(5,00)
0.344
(8,75)
0.394
(10,00)
A MIN
0.189
(4,80)
0.337
(8,55)
0.386
(9,80)
DIM
4040047/E 09/01
NOTES: A.
B.
C.
D.
All linear dimensions are in inches (millimeters).
This drawing is subject to change without notice.
Body dimensions do not include mold flash or protrusion, not to exceed 0.006 (0,15).
Falls within JEDEC MS-012
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1
MECHANICAL DATA
MTSS001C – JANUARY 1995 – REVISED FEBRUARY 1999
PW (R-PDSO-G**)
PLASTIC SMALL-OUTLINE PACKAGE
14 PINS SHOWN
0,30
0,19
0,65
14
0,10 M
8
0,15 NOM
4,50
4,30
6,60
6,20
Gage Plane
0,25
1
7
0°– 8°
A
0,75
0,50
Seating Plane
0,15
0,05
1,20 MAX
PINS **
0,10
8
14
16
20
24
28
A MAX
3,10
5,10
5,10
6,60
7,90
9,80
A MIN
2,90
4,90
4,90
6,40
7,70
9,60
DIM
4040064/F 01/97
NOTES: A.
B.
C.
D.
All linear dimensions are in millimeters.
This drawing is subject to change without notice.
Body dimensions do not include mold flash or protrusion not to exceed 0,15.
Falls within JEDEC MO-153
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1
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Copyright 2002, Texas Instruments Incorporated