SCDS085E − OCTOBER 1998 − REVISED OCTOBER 2003
D Enable Signal Is SSTL_2 Compatible
D Flow-Through Architecture Optimizes PCB
DBQ, DGV, DW, OR PW PACKAGE
(TOP VIEW)
Layout
VREF
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
GND
D Designed for Use With 200 Mbit/s Double
D
D
D
D
D
D
Data-Rate (DDR) SDRAM Applications
Switch On-State Resistance Is Designed to
Eliminate Series Resistor to DDR SDRAM
Internal 10-kΩ Pulldown Resistors to
Ground on B Port
Internal 50-kΩ Pullup Resistor on
Output-Enable Input
Rail-to-Rail Switching on Data I/O Ports
Ioff Supports Partial-Power-Down Mode
Operation
Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
1
24
2
23
3
22
4
21
5
20
6
19
7
18
8
17
9
16
10
15
11
14
12
13
VCC
OE
B1
B2
B3
B4
B5
B6
B7
B8
B9
B10
description/ordering information
This 10-bit FET bus switch is designed for 3-V to 3.6-V VCC operation and SSTL_2 output-enable (OE) input
levels.
When OE is low, the 10-bit bus switch is on, and port A is connected to port B. When OE is high, the switch is
open, and the high-impedance state exists between the two ports. There are 10-kΩ pulldown resistors to ground
on the B port.
The FET switch on-state resistance is designed to replace the series terminating resistor in the SSTL_2
data path.
This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that
damaging current will not backflow through the device when it is powered down. The device has isolation during
power off.
ORDERING INFORMATION
QSOP − DBQ
−40°C
−40
C to 85
85°C
C
ORDERABLE
PART NUMBER
PACKAGE†
TA
Tape and reel
SN74CBTLV3857DBQR
Tube
SN74CBTLV3857DW
Tape and reel
SN74CBTLV3857DWR
TSSOP − PW
Tape and reel
SN74CBTLV3857PWR
TVSOP − DGV
Tape and reel
SN74CBTLV3857DGVR
SOIC − DW
TOP-SIDE
MARKING
CL857
CBTLV3857
CL857
CL857
† Package drawings, standard packing quantities, thermal data, symbolization, and PCB design
guidelines are available at www.ti.com/sc/package.
FUNCTION TABLE
INPUT
OE
FUNCTION
L
A port = B port
H
Disconnect
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Copyright 2003, Texas Instruments Incorporated
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1
SCDS085E − OCTOBER 1998 − REVISED OCTOBER 2003
logic diagram (positive logic)
22
2
A1
B1
SW
RINT
13
11
A10
B10
SW
RINT
VCC
OE
VREF
23
1
simplified schematic, each FET switch
A
B
(OE)
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)†
Supply voltage range, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.5 V to 4.6 V
Input voltage range (OE only), VI (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.5 V to VCC + 0.5 V
Input voltage range (except OE), VI (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.5 V to 4.6 V
Continuous channel current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48 mA
Input clamp current, IIK (VI/O < 0) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −50 mA
Package thermal impedance, θJA (see Note 2): DBQ package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61°C/W
DGV package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 86°C/W
DW package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46°C/W
PW package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88°C/W
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65°C to 150°C
† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. The input and output negative-voltage ratings may be exceeded if the input and output current ratings are observed.
2. The package thermal impedance is calculated in accordance with JESD 51-7.
2
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SCDS085E − OCTOBER 1998 − REVISED OCTOBER 2003
recommended operating conditions (see Note 3)
MIN
VCC
VREF
Supply voltage
VIH
VIL
AC high-level control input voltage
VIH
VIL
DC high-level control input voltage
Reference voltage (0.38 × VCC)
NOM
MAX
UNIT
3
3.3
3.6
V
1.15
1.25
1.35
V
VREF + 350 mV
V
AC low-level control input voltage
VREF − 350 mV
VREF + 180 mV
V
V
DC low-level control input voltage
VREF − 180 mV
V
TA
Operating free-air temperature
−40
85
°C
NOTE 3: All unused control inputs of the device must be held at VCC or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
electrical characteristics over recommended operating free-air temperature range (unless
otherwise noted)
PARAMETER
VIK
II
TEST CONDITIONS
VCC = 3 V,
MIN
TYP†
II = −18 mA
UNIT
−1.2
V
OE
±1
A port
±5
µA
±1
mA
B port
VCC = 3.6 V,
VI = VCC or GND
VCC = 3.6 V,
VI = 3 V or 0
IO = 0,
VO = 3 V or 0,
OE = VCC
VREF
ICC
Ci
MAX
Control inputs
Cio(OFF)
ron‡
VI = VCC or GND
µA
mA
pF
5
pF
VI = 0,
VI = 0.9 V,
II = 24 mA
II = 24 mA
5
6
11
VI = 1.25 V,
II = 24 mA
7
13
VI = 1.6 V,
II = 24 mA
9
40
VCC = 0
roff‡
±5
25
3.5
VCC = 3 V
mA
8
Ω
1
MΩ
VCC = 3 V to 3.6 V,
VI = 1.65 V,
OE = VCC
1
† All typical values are at VCC = 3.3 V, TA = 25°C.
‡ Measured by the voltage drop between the A and B terminals at the indicated current through the switch. Resistance is determined by the lower
of the voltages of the two (A or B) terminals.
switching characteristics over recommended operating free-air temperature range (unless
otherwise noted) (see Figure 1)
FROM
(INPUT)
TO
(OUTPUT)
tpd§
A or B
B or A
ten
OE
A or B
OE
A or B
PARAMETER
tdis
VCC = 3.3 V
± 0.3 V
MIN
UNIT
MAX
0.25
ns
1.4
4.2
ns
1.4
4.8
ns
§ The propagation delay is the calculated RC time constant of the typical on-state resistance of the switch and the specified load capacitance, when
driven by an ideal voltage source (zero output impedance).
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3
SCDS085E − OCTOBER 1998 − REVISED OCTOBER 2003
PARAMETER MEASUREMENT INFORMATION
VCC = 3.3 V ± 0.3 V AND VDDQ = 2.5 ± 0.2 V
500 Ω
From Output
Under Test
VDDQ × 2
Open
S1
GND
CL = 50 pF
(see Note A)
500 Ω
Output
Control
LOAD CIRCUIT
TEST
S1
tpd
tPLZ/tPZL
tPHZ/tPZH
Open
VDDQ × 2
GND
VREF†
Input
VDDQ/2
VDDQ/2
0V
tPLH
Output
Output
Waveform 1
S1 at 2 × VDDQ
(see Note B)
VOH
VDDQ/2
VOL
VDDQ/2
VOLTAGE WAVEFORMS
PROPAGATION DELAY TIMES
tPLZ
VDDQ
VDDQ/2
tPZH
tPHL
VIH (AC)‡
VIL (AC)§
tPZL
VDDQ
VREF†
Output
Waveform 2
S1 at GND
(see Note B)
VOL + 0.15 V
VOL
tPHZ
VDDQ/2
VOH
VOH − 0.15 V
0V
VOLTAGE WAVEFORMS
ENABLE AND DISABLE TIMES
† VREF = 0.38 × VCC
‡ VIH(AC) = VREF + 350 mV
§ VIL(AC) = VREF − 350 mV
NOTES: A. CL includes probe and jig capacitance.
B. Waveform 1 is for an output with internal conditions such that the output is low except when disabled by the output control.
Waveform 2 is for an output with internal conditions such that the output is high except when disabled by the output control.
C. All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr ≤ 2 ns, tf ≤ 2 ns.
D. The outputs are measured one at a time with one transition per measurement.
E. tPLZ and tPHZ are the same as tdis.
F. tPZL and tPZH are the same as ten.
G. tPLH and tPHL are the same as tpd.
Figure 1. Load Circuit and Voltage Waveforms
4
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PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
SN74CBTLV3857DWR
ACTIVE
SOIC
DW
24
2000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
CBTLV3857
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of