SN54HCT00, SN74HCT00
ZHCSPU0F – NOVEMBER 1988 – REVISED OCTOBER 2022
SNx4HCT00 四路 2 输入正与非门
1 特性
•
•
•
•
•
•
•
2 说明
4.5V 至 5.5V 的工作电压范围
输出可驱动多达 10 个 LSTTL 负载
低功耗,ICC 最大值为 20μA
典型值 tpd = 10ns
±4mA 输出驱动(在 5V 时)
低输入电流,最大值 1μA
输入兼容 TTL 电压
这些器件包含四个独立的 2 输入与非门。它们以正逻
辑执行布尔函数 Y= A • B。
(1)
器件信息
器件型号
封装
封装尺寸(标称值)
SN74HCT00D
SOIC (14)
8.65mm × 3.90mm
SN74HCT00DBR
SSOP (14)
6.20mm × 5.30mm
SN74HCT00N
PDIP (14)
19.31mm × 6.35mm
SN74HCT00NSR
SO (14)
10.20mm × 5.30mm
SN74HCT00PW
TSSOP (14)
5.00mm × 4.40mm
(1)
如需了解所有可用封装,请参阅数据表末尾的可订购产品附
录。
xA
xY
xB
功能方框图
本文档旨在为方便起见,提供有关 TI 产品中文版本的信息,以确认产品的概要。有关适用的官方英文版本的最新信息,请访问
www.ti.com,其内容始终优先。TI 不保证翻译的准确性和有效性。在实际设计之前,请务必参考最新版本的英文版本。
English Data Sheet: SCLS062
SN54HCT00, SN74HCT00
www.ti.com.cn
ZHCSPU0F – NOVEMBER 1988 – REVISED OCTOBER 2022
Table of Contents
1 特性................................................................................... 1
2 说明................................................................................... 1
3 Revision History.............................................................. 2
4 Pin Configuration and Functions...................................3
5 Specifications.................................................................. 4
5.1 Absolute Maximum Ratings........................................ 4
(1)
5.2 Recommended Operating Conditions ..................... 4
5.3 Thermal Information....................................................4
5.4 Electrical Characteristics.............................................5
5.5 Switching Characteristics ...........................................5
5.6 Operating Characteristics........................................... 5
6 Parameter Measurement Information............................ 6
7 Detailed Description........................................................7
7.1 Overview..................................................................... 7
7.2 Functional Block Diagram........................................... 7
7.3 Device Functional Modes............................................7
8 Power Supply Recommendations..................................8
9 Layout...............................................................................8
9.1 Layout Guidelines....................................................... 8
10 Device and Documentation Support............................9
10.1 Documentation Support............................................ 9
10.2 接收文档更新通知..................................................... 9
10.3 支持资源....................................................................9
10.4 Trademarks............................................................... 9
10.5 Electrostatic Discharge Caution................................9
10.6 术语表....................................................................... 9
11 Mechanical, Packaging, and Orderable
Information...................................................................... 9
3 Revision History
注:以前版本的页码可能与当前版本的页码不同
Changes from Revision E (February 2022) to Revision F (October 2022)
Page
• Increased RθJA for packages: D (86 to 138.7); DB (96 to 117.9); N (80 to 69.5); NS (76 to 95.3); PW (113 to
122.8)..................................................................................................................................................................4
Changes from Revision D (August 2003) to Revision E (February 2022)
Page
• 更新了整个文档中的编号、格式、表格、图和交叉参考,以反映现代数据表标准.............................................. 1
2
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ZHCSPU0F – NOVEMBER 1988 – REVISED OCTOBER 2022
4 Pin Configuration and Functions
D, DB, N, NS, PW, J or W Package
14-Pin SOIC, SSOP, PDIP, SO, TSSOP
Top View
FK Package
20-Pin LCCC
Top View
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5 Specifications
5.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
VCC
Supply voltage range
(2)
IIK
Input clamp current
IOK
Output clamp current
IO
Continuous output current
VCC or GND
Continuous current through
TJ
Junction temperature
Tstg
Storage temperature
(1)
(2)
(2)
MIN
MAX
-0.5
7
UNIT
V
(VI < 0 or VI > VCC)
±20
mA
(VO < 0 or VO > VCC)
±20
mA
(VO = 0 to VCC)
±25
mA
±50
mA
150
°C
150
°C
-65
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
(1)
5.2 Recommended Operating Conditions
SN54HCT00(2)
SN74HCT00
MIN
NOM
MAX
MIN
NOM
MAX
4.5
5
5.5
4.5
5
5.5
UNIT
VCC
Supply voltage
VIH
High-level input voltage
VCC = 4.5 V to 5.5 V
VIL
Low-level input voltage
VCC = 4.5 V to 5.5 V
0.8
V
VI
Input voltage
0
VCC
0
VCC
V
VO
Output voltage
0
VCC
0
VCC
V
Δt/Δv
Input transition rise/fall time
500
ns
TA
Operating free-air temperature
85
°C
(1)
(2)
2
V
0.8
500
– 55
V
2
125
– 40
All unused inputs of the device must be held at VCC or GND to ensure proper device operation. Refer to the TI application report
Implications of Slow or Floating SMOS Inputs, literature number SCBA004.
SN54HCT00 is in product preview.
5.3 Thermal Information
THERMAL METRIC
DB (SSOP)
N (PDIP)
NS (SO)
PW (TSSOP)
14 PINS
14 PINS
14 PINS
14 PINS
14 PINS
UNIT
RθJA
Junction-to-ambient thermal
(1)
resistance
138.7
117.9
69.5
95.3
122.8
°C/W
RθJC (top)
Junction-to-case (top) thermal
resistance
93.8
63.1
57.6
52.9
52.1
°C/W
RθJB
Junction-to-board thermal
resistance
94.7
66.9
49.3
55.9
65.8
°C/W
ΨJT
Junction-to-top characterization
parameter
49.1
22.2
37.6
19.5
7.8
°C/W
ΨJB
Junction-to-board
characterization parameter
94.3
66.2
49.1
55.4
65.3
°C/W
RθJC (bot)
Junction-to-case (bottom)
thermal resistance
N/A
N/A
N/A
N/A
N/A
°C/W
(1)
4
D (SOIC)
For more information about traditional and new thermal metrics, see the Semiconductor and IC package thermal metrics application
report.
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5.4 Electrical Characteristics
PARAMETER
TEST CONDITIONS(1)
IOH = –20 μA
VOH
High-level output voltage
VOL
Low-level output voltage
II
Input hold current
VI = VCC or 0
5.5
ICC
Supply current
VI = VCC or 0. IO = 0
5.5
(2)
Supply-current change
One input at 0.5V or 2.4
V, Other inputs at 0 or
VCC
Ci
Input capacitance
ΔICC
(1)
(2)
(3)
4.5
IOH = –4 mA
IOL = 20 μA
5.5
IOL = 4 mA
SN54HCT00(3)
TA = 25°C
VCC
(V)
MAX
MIN
MAX
SN74HCT00
MIN
TYP
MIN
4.4
4.499
4.4
4.4
3.98
4.3
3.7
3.84
MAX
UNIT
V
0.001
0.1
0.1
0.1
0.17
0.26
0.4
0.33
±0.1
±100
±1000
±1000
nA
2
40
20
μA
2.9
mA
10
pF
V
3
5.5
4.5 to
5.5
1.4
2.4
3
10
10
VI = VIH or VIL, unless otherwise noted.
This is the increase in supply current for each input that is at one of the specified TTL voltage levels, rather than 0 V or VCC.
SN54HCT00 is in product preview.
5.5 Switching Characteristics
CL = 50 pF. See Parameter Measurement Information
PARAMETER
tpd
Propagation delay
tt
Transition time
(1)
FROM (INPUT)
TO
(OUTPUT)
A or B
Y
Y
VCC
(V)
SN54HCT00(1)
TA = 25°C
MIN
MIN
MAX
SN74HCT00
TYP
MAX
MIN
MAX
4.5
11
20
30
25
5.5
10
18
27
22
4.5
9
15
22
19
5.5
8
14
20
17
ns
ns
SN54HCT00 is in product preview.
5.6 Operating Characteristics
TA = 25°C
Cpd
Power dissipation capacitance
Test Conditions
TYP
UNIT
No load
20
pF
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6 Parameter Measurement Information
Phase relationships between waveforms were chosen arbitrarily. All input pulses are supplied by generators
having the following characteristics: PRR ≤ 1 MHz, ZO = 50 Ω, tt < 6 ns.
For clock inputs, fmax is measured when the input duty cycle is 50%.
The outputs are measured one at a time with one input transition per measurement.
Test
Point
From Output
Under Test
CL(1)
(1) CL includes probe and test-fixture capacitance.
图 6-1. Load Circuit for Push-Pull Outputs
3V
Input
1.3V
1.3V
0V
tPLH(1)
tPHL(1)
VOH
Output
Waveform 1
50%
50%
VOL
tPLH(1)
tPHL(1)
VOH
Output
Waveform 2
50%
50%
VOL
(1) The greater between tPLH and tPHL is the same as tpd.
图 6-2. Voltage Waveforms, Propagation Delays for TTL-Compatible Inputs
6
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7 Detailed Description
7.1 Overview
These devices contain four independent 2-input NAND gates. They perform the Boolean function Y = A • B in
positive logic.
7.2 Functional Block Diagram
xA
xY
xB
7.3 Device Functional Modes
表 7-1. Function Table
(each gate)
Inputs
Output
A
B
Y
H
H
L
L
X
H
X
L
H
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8 Power Supply Recommendations
The power supply can be any voltage between the minimum and maximum supply voltage rating located in the
Recommended Operating Conditions. Each VCC terminal should have a good bypass capacitor to prevent power
disturbance. A 0.1-μF capacitor is recommended for this device. It is acceptable to parallel multiple bypass caps
to reject different frequencies of noise. The 0.1-μF and 1-μF capacitors are commonly used in parallel. The
bypass capacitor should be installed as close to the power terminal as possible for best results.
9 Layout
9.1 Layout Guidelines
When using multiple-input and multiple-channel logic devices inputs must not ever be left floating. In many
cases, functions or parts of functions of digital logic devices are unused; for example, when only two inputs of a
triple-input AND gate are used or only 3 of the 4 buffer gates are used. Such unused input pins must not be left
unconnected because the undefined voltages at the outside connections result in undefined operational states.
All unused inputs of digital logic devices must be connected to a logic high or logic low voltage, as defined by the
input voltage specifications, to prevent them from floating. The logic level that must be applied to any particular
unused input depends on the function of the device. Generally, the inputs are tied to GND or VCC, whichever
makes more sense for the logic function or is more convenient.
8
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10 Device and Documentation Support
TI offers an extensive line of development tools. Tools and software to evaluate the performance of the device,
generate code, and develop solutions are listed below.
10.1 Documentation Support
10.1.1 Related Documentation
10.2 接收文档更新通知
要接收文档更新通知,请导航至 ti.com 上的器件产品文件夹。点击订阅更新 进行注册,即可每周接收产品信息更
改摘要。有关更改的详细信息,请查看任何已修订文档中包含的修订历史记录。
10.3 支持资源
TI E2E™ 支持论坛是工程师的重要参考资料,可直接从专家获得快速、经过验证的解答和设计帮助。搜索现有解
答或提出自己的问题可获得所需的快速设计帮助。
链接的内容由各个贡献者“按原样”提供。这些内容并不构成 TI 技术规范,并且不一定反映 TI 的观点;请参阅
TI 的《使用条款》。
10.4 Trademarks
TI E2E™ is a trademark of Texas Instruments.
所有商标均为其各自所有者的财产。
10.5 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
10.6 术语表
TI 术语表
本术语表列出并解释了术语、首字母缩略词和定义。
11 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
www.ti.com
24-Oct-2022
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
SN74HCT00D
ACTIVE
SOIC
D
14
50
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
HCT00
Samples
SN74HCT00DBR
ACTIVE
SSOP
DB
14
2000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
HT00
Samples
SN74HCT00DE4
ACTIVE
SOIC
D
14
50
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
HCT00
Samples
SN74HCT00DG4
ACTIVE
SOIC
D
14
50
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
HCT00
Samples
SN74HCT00DR
ACTIVE
SOIC
D
14
2500
RoHS & Green
NIPDAU | SN
Level-1-260C-UNLIM
-40 to 85
HCT00
Samples
SN74HCT00DRE4
ACTIVE
SOIC
D
14
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
HCT00
Samples
SN74HCT00DT
ACTIVE
SOIC
D
14
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
HCT00
Samples
SN74HCT00N
ACTIVE
PDIP
N
14
25
RoHS & Green
NIPDAU
N / A for Pkg Type
-40 to 85
SN74HCT00N
Samples
SN74HCT00NSR
ACTIVE
SO
NS
14
2000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
HCT00
Samples
SN74HCT00PW
ACTIVE
TSSOP
PW
14
90
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
HT00
Samples
SN74HCT00PWR
ACTIVE
TSSOP
PW
14
2000
RoHS & Green
NIPDAU | SN
Level-1-260C-UNLIM
-40 to 85
HT00
Samples
SN74HCT00PWRG4
ACTIVE
TSSOP
PW
14
2000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
HT00
Samples
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of