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SN74LVC1G14
SCES218Y – APRIL 1999 – REVISED NOVEMBER 2018
SN74LVC1G14 Single Schmitt-Trigger Inverter
1 Features
3 Description
•
This single Schmitt-trigger inverter is designed for
1.65-V to 5.5-V VCC operation.
1
•
•
•
•
•
•
•
•
Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
ESD Protection Exceeds JESD 22
– 2000-V Human-Body Model (A114-A)
– 200-V Machine Model (A115-A)
– 1000-V Charged-Device Model (C101)
Available in the Texas Instruments NanoFree™
Package
Supports 5-V VCC Operation
Inputs Accept Voltages to 5.5 V
Max tpd of 4.6 ns at 3.3 V
Low Power Consumption, 10-µA Max ICC
±24-mA Output Drive at 3.3 V
Ioff Supports Partial-Power-Down Mode Operation
2 Applications
•
•
•
•
•
•
•
•
•
•
•
•
AV Receiver
Audio Dock: Portable
Blu-ray Player and Home Theater
Embedded PC
MP3 Player/Recorder (Portable Audio)
Personal Digital Assistant (PDA)
Power: Telecom/Server AC/DC Supply: Single
Controller: Analog and Digital
Solid State Drive (SSD): Client and Enterprise
TV: LCD/Digital and High-Definition (HDTV)
Tablet: Enterprise
Video Analytics: Server
Wireless Headset, Keyboard, and Mouse
The SN74LVC1G14 device contains one inverter and
performs the Boolean function Y = A. The device
functions as an independent inverter with Schmitttrigger inputs, so the device has different input
threshold levels for positive-going (VT+) and negativegoing (VT–) signals to provide hysteresis (ΔVT) which
makes the device tolerant to slow or noisy input
signals.
NanoFree™ package technology is a major
breakthrough in IC packaging concepts, using the die
as the package.
This device is fully specified for partial-power-down
applications using Ioff. The Ioff circuitry disables the
outputs when the device is powered down. This
inhibits current backflow into the device which
prevents damage to the device.
Device Information
ORDER NUMBER
PACKAGE
BODY SIZE (NOM)
SN74LVC1G14DBV
SOT-23 (5)
2.90 mm × 1.60 mm
SN74LVC1G14DCK
SC70 (5)
2.00 mm × 1.25 mm
SN74LVC1G14DRL
SOT-5X3 (5)
1.60 mm × 1.20 mm
SN74LVC1G14DRY
SON (6)
1.45 mm × 1.00 mm
SN74LVC1G14DSF
SON (6)
1.00 mm × 1.00 mm
SN74LVC1G14YZP
DSBGA (5)
1.39 mm × 0.89 mm
SN74LVC1G14YZV
DSBGA (4)
0.89 mm × 0.89 mm
SN74LVC1G14DPW
X2SON (5)
0.80 mm x 0.80 mm
Logic Diagram (Positive Logic)
(DBV, DCK, DRL, DRY, DPW, and YZP Package)
A
2
4
Y
Logic Diagram (Positive Logic)
(YZV Package)
A
1
3
Y
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
SN74LVC1G14
SCES218Y – APRIL 1999 – REVISED NOVEMBER 2018
www.ti.com
Table of Contents
1
2
3
4
5
6
7
8
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
6.1
6.2
6.3
6.4
6.5
6.6
6.7
6.8
6.9
4
4
5
5
6
7
7
7
7
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Switching Characteristics: –40°C to 85°C ................
Switching Characteristics: –40°C to 125°C...............
Operating Characteristics..........................................
Typical Characteristics ..............................................
Parameter Measurement Information .................. 8
Detailed Description .............................................. 9
8.1 Overview ................................................................... 9
8.2 Functional Block Diagrams ....................................... 9
8.3 Feature Description................................................... 9
8.4 Device Functional Modes........................................ 10
9
Application and Implementation ........................ 11
9.1 Application Information............................................ 11
9.2 Typical Application ................................................. 11
10 Power Supply Recommendations ..................... 12
11 Layout................................................................... 12
11.1 Layout Guidelines ................................................. 12
11.2 Layout Example .................................................... 13
12 Device and Documentation Support ................. 14
12.1
12.2
12.3
12.4
12.5
12.6
Documentation Support ........................................
Receiving Notification of Documentation Updates
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
14
14
14
14
14
14
13 Mechanical, Packaging, and Orderable
Information ........................................................... 14
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision X (August 2017) to Revision Y
Page
•
Changed New package pinout added to Pin Functions table. Multiple Pin Functions tables condensed to one. ................. 4
•
Changed Tj and Tstg lines switched for consistency with other devices. ................................................................................ 4
•
Added differentiated ROC temperatures for DPW, YZP and YZV packages ........................................................................ 5
•
Changed format of Switching Characteristics tables to include columns for different CL conditions .................................... 7
•
Added temperature range to Conditions statement for Switching Characteristics tables ..................................................... 7
•
Replaced PMI section with updated load circuit and relevant waveform figures. Collapsed parameter measurement
values into one table............................................................................................................................................................... 8
Changes from Revision W (March 2014) to Revision X
Page
•
Added Thermal Information table, Feature Description section, Device Functional Modes, Application and
Implementation section, Power Supply Recommendations section, and Layout section ...................................................... 1
•
Added DSF, YZP, YZV, and DPW packages to Device Information table............................................................................. 1
•
Changed Terminal Configuration and Functions to Pin Configuration and Functions ........................................................... 3
•
Moved Storage temperature, Tstg to Absolute Maximum Ratings table. ................................................................................ 4
•
Changed Handling Ratings table to ESD Ratings .................................................................................................................. 4
•
Changed values in the Thermal Information table to align with JEDEC standards. .............................................................. 5
•
Added typical application...................................................................................................................................................... 11
•
Added Documentation Support, Receiving Notification of Documentation Updates, and Community Resources .............. 14
Changes from Revision V (Novmber 2012) to Revision W
Page
•
Added DPW Package ............................................................................................................................................................. 1
•
Added Applications ................................................................................................................................................................. 1
•
Moved Tstg to Handling Ratings table ..................................................................................................................................... 4
2
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SCES218Y – APRIL 1999 – REVISED NOVEMBER 2018
5 Pin Configuration and Functions
DBV Package
5-Pin SOT-23
Top View
N.C.
1
A
2
GND
DCK Package
5-Pin SC70
Top View
VCC
5
3
N.C.
1
A
2
GND
3
DRL Package
5-Pin SOT-5X3
Top View
1
A
2
GND
3
5
4
NC
VCC
Y
N.C.
1
6
A
2
5
N.C.
GND
3
4
Y
VCC
Y
DSF Package
6-Pin SON
Top View
VCC
Y
A
4
DRY Package
6-Pin SON
Top View
DPW Package
5-Pin X2SON
Top View
GND
VCC
Y
4
N.C.
5
N.C.
1
6
VCC
A
2
5
N.C.
GND
3
4
Y
See mechanical drawings for dimensions.
N.C. – No internal connection
YZP Package
5-Pin DSBGA
Bottom View
1
C
GND
B
A
YZV Package
4-Pin DSBGA
Bottom View
2
Y
1
2
B
GND
Y
A
A
VCC
A
DNU
VCC
Not to scale
Not to scale
DNU – Do not use
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Pin Functions
PIN
DBV, DCK,
DRL, DPW
DRY, DSF
A
2
GND
3
N.C.
NAME
I/O
DESCRIPTION
YZP
YZV
2
B1
A1
I
3
C1
B1
—
Ground
1
1, 5
—
—
—
No internal connection (1)
DNU
—
—
A1
—
—
Do not use (2)
VCC
5
6
A2
A2
—
Positive Supply
Y
4
4
C2
B2
O
Signal Output
(1)
(2)
Signal Input
Pins labeled N.C. can be connected to any signal or voltage source, including ground. They should always be soldered to the board.
Pins labeled DNU should not be connected to any signal or voltage source, including ground. They should always be soldered to the
board.
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
VCC
Supply voltage
(2)
MIN
MAX
UNIT
–0.5
6.5
V
VI
Input voltage
–0.5
6.5
V
VO
Voltage range applied to any output in the high-impedance or power-off state (2)
–0.5
6.5
V
VO
Voltage range applied to any output in the high or low state (2)
–0.5
VCC + 0.5
V
IIK
Input clamp current
VI < 0
–50
mA
IOK
Output clamp current
VO < 0
–50
mA
IO
Continuous output current
±50
mA
Continuous current through VCC or GND
±100
mA
150
°C
150
°C
Tj
Maximum junction temperature
Tstg
Storage temperature
(1)
(2)
(3)
(3)
–65
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The input and output negative-voltage ratings may be exceeded if the input and output current ratings are observed.
The value of VCC is provided in the recommended operating conditions table.
6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
4
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
2000
Charged-device model (CDM), per JEDEC specification JESD22-C101 (2)
1000
Machine Model (A115-A)
200
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
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6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted) (1)
MIN
MAX
Operating
1.65
5.5
Data retention only
1.5
UNIT
VCC
Supply voltage
VI
Input voltage
0
5.5
V
VO
Output voltage
0
VCC
V
VCC = 1.65 V
–4
VCC = 2.3 V
IOH
High-level output current
–8
–16
VCC = 3 V
Low-level output current
–32
VCC = 1.65 V
4
8
16
VCC = 3 V
(1)
Operating free-air temperature
mA
24
VCC = 4.5 V
TA
mA
–24
VCC = 4.5 V
VCC = 2.3 V
IOL
V
32
YZP, YZV, and DPW packages
–40
85
All other packages
–40
125
°C
All unused inputs of the device must be held at VCC or GND to assure proper device operation. See Implications of Slow or Floating
CMOS Inputs.
6.4 Thermal Information
SN74LVC1G14
THERMAL METRIC (1)
DBV
(SOT-23)
DCK
(SC70)
DRL
(SOT-5X3)
DRY
(SON)
DPW
(X2SON)
YZV
(DSBGA)
YZP
(DSBGA)
5 PINS
5 PINS
5 PINS
5 PINS
5 PINS
4 PINS
5 PINS
UNIT
RθJA
Junction-to-ambient
thermal resistance
247.2
276.1
296.2
369.6
522.9
168.2
146.2
°C/W
RθJC(top)
Junction-to-case
(top) thermal
resistance
154.5
178.9
137.3
257.6
250.5
2.1
1.4
°C/W
RθJB
Junction-to-board
thermal resistance
86.8
70.9
145.3
230.8
384.0
55.9
39.8
°C/W
ψJT
Junction-to-top
characterization
parameter
58.0
47.0
14.7
77.2
46.5
1.1
0.7
°C/W
ψJB
Junction-to-board
characterization
parameter
86.4
69.3
145.9
231.0
382.8
56.3
39.3
°C/W
RθJC(bot)
Junction-to-case
(bottom) thermal
resistance
N/A
N/A
N/A
N/A
174.1
N/A
N/A
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
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6.5 Electrical Characteristics
over recommended operating free-air temperature range (unless otherwise noted)
PARAME
TER
TEST CONDITIONS
VCC
–40°C to 125°C (1)
–40°C to 85°C
MIN
TYP (2)
MAX
MIN
TYP
MAX
VT+
Positivegoing
input
threshold
voltage
1.65 V
0.79
1.16
.79
1.16
2.3 V
1.11
1.56
1.11
1.56
3V
1.5
1.87
1.5
1.87
4.5 V
2.16
2.74
2.16
2.74
5.5 V
2.61
3.33
2.61
3.33
VT–
Negativegoing
input
threshold
voltage
1.65 V
0.39
0.62
.39
.64
2.3 V
0.58
0.87
.58
.89
3V
0.84
1.14
.84
1.16
4.5 V
1.41
1.79
1.41
1.79
1.87
2.29
VT–
Negativegoing
input
threshold
voltage
DBV, DCK, DRL, DRY, DSF, YZV and
YZP packages
DPW package
ΔVT
Hysteresis
(VT+ –
VT–)
5.5 V
1.87
2.29
1.65 V
0.44
0.67
2.3 V
0.63
0.92
3V
0.89
1.19
4.5 V
1.46
1.84
5.5 V
1.92
2.34
1.65 V
0.37
0.62
0.37
0.62
2.3 V
0.48
0.77
0.48
0.77
3V
0.56
0.87
0.56
0.87
4.5 V
0.71
1.04
0.71
1.04
0.71
1.11
0.71
1.11
5.5 V
1.65 V to
4.5 V
IOL = –100 µA
VOH
VOL
1.2
IOL = –8 mA
2.3 V
1.9
1.9
2.4
2.4
2.3
2.3
3.8
3.8
3V
4.5 V
IOL = 100 µA
1.65 V to
4.5 V
0.1
0.1
IOL = 4 mA
1.65 V
0.45
0.45
IOL = 8 mA
2.3 V
0.3
0.3
0.4
0.4
0.55
0.55
3V
V
IOL = 32 mA
4.5 V
0.55
0.7
0 to 5.5
V
±5
±5
µA
0
±10
±10
µA
1.65 V to
5.5 V
10
10
µA
3 V to
5.5 V
500
500
µA
VI or VO = 5.5 V
ICC
VI = 5.5 V or
GND,
IO = 0
ΔICC
One input at
VCC – 0.6 V,
Other inputs at VCC
or GND
Ci
VI = VCC or GND
6
V
A
VI = 5.5 V or GND
input
Ioff
(2)
V
V
IOL = –32 mA
IOL = 24 mA
(1)
VCC –
0.1
1.2
IOL = 16 mA
II
VCC –
0.1
1.65 V
IOL = –24 mA
V
V
IOL = –4 mA
IOL = –16 mA
UNIT
3.3 V
4.5
4.5
pF
These specifications do not apply to DPW, YZV and YZP packages. DPW, YZV and YZP have a recommended operating free-air
temperature range of –40°C to 85°C.
All typical values are at VCC = 3.3 V, TA = 25°C.
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6.6 Switching Characteristics: –40°C to 85°C
over recommended operating free-air temperature range, (–40°C to 85°C unless otherwise noted) (see )
FROM
(INPUT)
PARAMETER
tpd
TO
(OUTPUT)
A
Y
CL = 30 pF
or 50 pF
CL = 15 pF
VCC
MIN
MAX
MIN
1.8 V ± 0.15 V
2.8
9.9
3.8
11
2.5 V ± 0.2 V
1.6
5.5
2
6.5
3.3 V ± 0.3 V
1.5
4.6
1.8
5.5
5 V ± 0.5 V
0.9
4.4
1.2
5
UNIT
MAX
ns
6.7 Switching Characteristics: –40°C to 125°C
over operating free-air temperature range, (–40°C to 125°C unless otherwise noted)
FROM
(INPUT)
PARAMETER
tpd
TO
(OUTPUT)
A
CL = 30 pF
or 50 pF
VCC
Y
MIN
MAX
1.8 V ± 0.15 V
3.8
13
2.5 V ± 0.2 V
2
8
3.3 V ± 0.3 V
1.8
6.5
5 V ± 0.5 V
1.2
6
UNIT
ns
6.8 Operating Characteristics
TA = 25°C
PARAMETER
Cpd
TEST CONDITIONS
Power dissipation capacitance
f = 10 MHz
VCC
TYP
1.8 V
20
2.5 V
21
3.3 V
22
5V
25
UNIT
pF
6.9 Typical Characteristics
TA = 25°C
5.5
0.35
5
0.3
4.5
0.25
VOL (V)
VOH (V)
4
3.5
0.2
0.15
3
0.1
2.5
VCC = 1.8 V
VCC = 2.5 V
VCC = 3.3 V
VCC = 5 V
2
VCC = 1.8 V
VCC = 2.5 V
VCC = 3.3 V
VCC = 5 V
0.05
0
1.5
0
5
10
15
20
IOH (mA)
25
30
35
0
Figure 1. Typical VOH vs IOH - 25°C
5
10
15
20
IOL (mA)
25
30
Figure 2. Typical VOL vs IOL - 25°C
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7 Parameter Measurement Information
•
•
Input pulse is supplied by generator having the following characteristics: PRR ≤ 10MHz. ZO = 50Ω.
The outputs are measured one at a time, with one transition per measurement.
From Output
Under Test
(1)
CL(1)
RL
CL includes probe and jig capacitance.
Figure 3. Load Circuit
Table 1. Parameter Measurement Conditions
Vcc
INPUTS
VM
VLOAD
≤ 2 ns
Vcc/2
2 × Vcc
Vcc
≤ 2 ns
Vcc/2
2 × Vcc
3.3 V ± 0.3 V
3V
≤ 2.5 ns
1.5 V
6V
5 V ± 0.5 V
Vcc
≤ 2.5 ns
Vcc/2
2 × Vcc
VI
tr/tf
1.8 V ± 0.15 V
Vcc
2.5 V ± 0.2 V
CL
RL
15 pF
1 MΩ
30 pF
1 kΩ
15 pF
1 MΩ
30 pF
500 Ω
15 pF
1 MΩ
50 pF
500 Ω
15 pF
1 MΩ
50 pF
500 Ω
VD
0.15 V
0.15 V
0.3 V
0.3 V
VI
Input
VM
VM
0V
tPLH
(1)
tPHL
(1)
VOH
Output
VM
VM
VOL
tPLH(1)
tPHL(1)
VOH
Output
VM
VM
VOL
(1)
The maximum value of tpd is the worst case of tPLH or tPHL
Figure 4. Voltage Waveforms, Propagation Delay Times, Inverting and Non-Inverting Outputs
8
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8 Detailed Description
8.1 Overview
The SN74LVC1G14 single Schmitt-trigger inverter is designed for 1.65 V to 5.5 V operation and performs the
Boolean function Y = A. This device is fully specified for partial-power-down applications using Ioff. The Ioff
circuitry disables the outputs when the device is powered down. This inhibits current backflow into the device
which prevents damage to the device.
8.2 Functional Block Diagrams
A
2
4
Y
Figure 5. Logic Diagram (Positive Logic)
(DBV, DCK, DRL, DRY, DPW, and YZP Package)
A
1
3
Y
Figure 6. Logic Diagram (Positive Logic)
(YZV Package)
8.3 Feature Description
8.3.1 Balanced High-Drive CMOS Push-Pull Outputs
A balanced output allows the device to sink and source similar currents. The high drive capability of this device
creates fast edges into light loads so routing and load conditions should be considered to prevent ringing.
Additionally, the outputs of this device are capable of driving larger currents than the device can sustain without
being damaged. It is important for the power output of the device to be limited to avoid thermal runaway and
damage due to over-current. The electrical and thermal limits defined the in the Absolute Maximum Ratings
Absolute Maximum Ratings] must be followed at all times.
8.3.2 CMOS Schmitt-Trigger Inputs
Standard CMOS inputs are high impedance and are typically modeled as a resistor in parallel with the input
capacitance given in the Electrical Characteristics. The worst case resistance is calculated with the maximum
input voltage, given in the Absolute Maximum Ratings, and the maximum input leakage current, given in the
Electrical Characteristics, using ohm's law (R = V ÷ I).
The Schmitt-trigger input architecture provides hysteresis as define in the Electrical Characteristics, which makes
this device extremely tolerant to slow or noisy inputs. While the inputs can be driven much slower than standard
CMOS inputs, it is still recommended to properly terminate unused inputs. Driving the inputs slowly will also
increase dynamic current consumption of the device.
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Feature Description (continued)
8.3.3 Clamp Diodes
The inputs and outputs to this device have negative clamping diodes.
CAUTION
Voltages beyond the values specified in the Absolute Maximum Ratings table can
cause damage to the device. The input negative-voltage and output negative-voltage
ratings may be exceeded if the input and output clamp-current ratings are observed.
Device
VCC
Logic
Input
-IIK
Output
-IOK
GND
Figure 7. Electrical Placement of Clamping Diodes for Each Input and Output
8.3.4 Partial Power Down (Ioff)
The inputs and outputs for this device enter a high impedance state when the supply voltage is 0 V. The
maximum leakage into or out of any input or output pin on the device is specified by Ioff in the Electrical
Characteristics.
8.3.5 Over-Voltage Tolerant Inputs
Input signals to this device can be driven above the supply voltage so long as they remain below the maximum
input voltage value specified in the Absolute Maximum Ratings.
8.4 Device Functional Modes
Table 2 lists the functional modes of the SN74LVC1G14 device.
Table 2. Function Table
INPUT
A
10
OUTPUT
Y
H
L
L
H
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9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
Mechanical input elements, such as push buttons or rotary knobs, offer simple ways to interact with electronic
systems. Typically, these elements have recoil or bouncing, where the mechanical element makes and breaks
contact multiple times during human interaction. This bouncing can cause one or more repeated signals to be
passed, triggering multiple actions when only a single input was intended. One potential solution to mitigating
these multiple inputs is by utilizing a Schmitt-trigger to create a debounce circuit. Figure 8 shows an example of
this solution.
9.2 Typical Application
The input due to the push button switches multiple times, causing the output of a non Schmitt-trigger device to
trigger multiple times, while the Schmitt-trigger input device with RC delay limits the output pulse to a single
pulse desired by the user. The separated positive and negative input voltage threshold values, see Figure 9,
prevent multiple triggers from occurring.
VCC
R1
R2
A
Y
OUTPUT
C1
Figure 8. Push Button Debounce Circuit Schematic
9.2.1 Design Requirements
This device uses CMOS technology and has balanced output drive. Take care to avoid bus contention because it
can drive currents that would exceed maximum limits. The high drive also creates fast edges into light loads so
routing and load conditions should be considered to prevent ringing.
9.2.2 Detailed Design Procedure
1. Recommended Input Conditions:
– For specified high and low levels, see (VT+ and VT-) in the Recommended Operating Conditions table.
– Inputs are overvoltage tolerant allowing them to go as high as (VI max) in the Recommended Operating
Conditions table at any valid VCC.
2. Recommended Output Conditions:
– Load currents should not exceed (IO max) per output and should not exceed (Continuous current through
VCC or GND) total current for the part. These limits are located in the Absolute Maximum Ratings table.
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Typical Application (continued)
9.2.3 Application Curve
Figure 9 is created from the values given in the Electrical Characteristics. Linear interpolation shows the values
between each given point.
3.5
Input Voltage (V)
3
2.5
VT+(min)
VT+(max)
VT-(min)
VT-(max)
2
1.5
1
0.5
0
1.5
2
2.5
3
3.5
4
Supply Voltage (V)
4.5
5
5.5
D001
Figure 9. Interpolated Threshold Voltages vs. VCC
10 Power Supply Recommendations
The power supply can be any voltage between the minimum and maximum supply voltage rating located in the
Recommended Operating Conditions table.
The VCC pin must have a good bypass capacitor to prevent power disturbance. A 0.1-µF capacitor is
recommended, and it is ok to parallel multiple bypass caps to reject different frequencies of noise. 0.1-µF and 1µF capacitors are commonly used in parallel. The bypass capacitor must be installed as close to the power pin
as possible for best results.
11 Layout
11.1 Layout Guidelines
Even low data rate digital signals can contain high-frequency signal components due to fast edge rates. When a
printed-circuit board (PCB) trace turns a corner at a 90° angle, a reflection can occur. A reflection occurs
primarily because of the change of width of the trace. At the apex of the turn, the trace width increases to 1.414
times the width. This increase upsets the transmission-line characteristics, especially the distributed capacitance
and self–inductance of the trace which results in the reflection. Not all PCB traces can be straight and therefore
some traces must turn corners. shows progressively better techniques of rounding corners. Only the last
example (BEST) maintains constant trace width and minimizes reflections.
An example layout is given in Figure 10 for the DPW (X2SON-5) package. This example layout includes a 0402
(metric) capacitor and uses the measurements found in the example board layout appended to this end of this
datasheet. A via of diameter 0.1 mm (3.973 mil) is placed directly in the center of the device. This via can be
used to trace out the center pin connection through another board layer, or it can be left out of the layout
12
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11.2 Layout Example
4 mil
0402
0.1 …F
Bypass Capacitor
8 mil
8 mil
8 mil
SOLDER MASK
OPENING, TYP
METAL UNDER
SOLDER MASK, TYP
Figure 10. Example Layout With DPW (X2SON-5) Package
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12 Device and Documentation Support
12.1 Documentation Support
12.1.1 Related Documentation
For related documentation see the following:
Implications of Slow or Floating CMOS Inputs
12.2 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
12.3 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
12.4 Trademarks
NanoFree, E2E are trademarks of Texas Instruments.
All other trademarks are the property of their respective owners.
12.5 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
12.6 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical packaging and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
14
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PACKAGE OPTION ADDENDUM
www.ti.com
8-Jun-2022
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
SN74LVC1G14DBVR
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU | SN
Level-1-260C-UNLIM
-40 to 125
(C145, C14F, C14J,
C14K, C14R)
(C14H, C14S)
SN74LVC1G14DBVRE4
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
C14F
Samples
SN74LVC1G14DBVRG4
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
C14F
Samples
SN74LVC1G14DBVT
ACTIVE
SOT-23
DBV
5
250
RoHS & Green
NIPDAU | SN
Level-1-260C-UNLIM
-40 to 125
(C145, C14F, C14J,
C14K, C14R)
(C14H, C14S)
SN74LVC1G14DBVTE4
ACTIVE
SOT-23
DBV
5
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
C14F
Samples
SN74LVC1G14DBVTG4
ACTIVE
SOT-23
DBV
5
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
C14F
Samples
SN74LVC1G14DCKR
ACTIVE
SC70
DCK
5
3000
RoHS & Green
NIPDAU | SN
Level-1-260C-UNLIM
-40 to 125
(CF5, CFF, CFJ, CF
K, CFR, CFT)
(CFH, CFS)
SN74LVC1G14DCKRE4
ACTIVE
SC70
DCK
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
CF5
CFS
SN74LVC1G14DCKT
ACTIVE
SC70
DCK
5
250
RoHS & Green
NIPDAU | SN
Level-1-260C-UNLIM
-40 to 125
(CF5, CFF, CFJ, CF
K, CFR, CFT)
(CFH, CFS)
SN74LVC1G14DCKTE4
ACTIVE
SC70
DCK
5
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
CF5
CFS
Samples
SN74LVC1G14DCKTG4
ACTIVE
SC70
DCK
5
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
CF5
CFS
Samples
SN74LVC1G14DPWR
ACTIVE
X2SON
DPW
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
9H
Samples
SN74LVC1G14DRLR
ACTIVE
SOT-5X3
DRL
5
4000
RoHS & Green
NIPDAUAG
Level-1-260C-UNLIM
-40 to 125
(CF7, CFR)
Samples
SN74LVC1G14DRLRG4
ACTIVE
SOT-5X3
DRL
5
4000
RoHS & Green
NIPDAUAG
Level-1-260C-UNLIM
-40 to 125
(CF7, CFR)
Samples
SN74LVC1G14DRYR
ACTIVE
SON
DRY
6
5000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
CF
Samples
SN74LVC1G14DSFR
ACTIVE
SON
DSF
6
5000
RoHS & Green NIPDAU | NIPDAUAG
Level-1-260C-UNLIM
-40 to 125
CF
Samples
Addendum-Page 1
Samples
Samples
Samples
Samples
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
Orderable Device
8-Jun-2022
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
SN74LVC1G14YZPR
ACTIVE
DSBGA
YZP
5
3000
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 85
(CF7, CFN)
Samples
SN74LVC1G14YZVR
ACTIVE
DSBGA
YZV
4
3000
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 85
CF
(7, N)
Samples
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of