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SN74LVC1G79
SCES220U – APRIL 1999 – REVISED APRIL 2017
SN74LVC1G79 Single Positive-Edge-Triggered D-Type Flip-Flop
1 Features
3 Description
•
The SN74LVC1G79 device is a single positive-edgetriggered D-type flip-flop that is designed for 1.65-V to
5.5-V VCC operation.
1
•
•
•
•
•
•
•
•
•
Available in the Texas Instruments
NanoFree™ Package
Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
ESD Protection Exceeds JESD 22
– 2000-V Human-Body Model (A114-A)
– 200-V Machine Model (A115-A)
– 1000-V Charged-Device Model (C101)
Supports 5-V VCC Operation
Inputs Accept Voltages to 5.5 V
Supports Down Translation to VCC
Max tpd of 6 ns at 3.3 V and 50 pF load
Low Power Consumption, 10-µA Max ICC
±24-mA Output Drive at 3.3 V
Ioff supports Partial-Power-Down Mode and BackDrive Protection
When data at the data (D) input meets the setup time
requirement, the data is transferred to the Q output
on the positive-going edge of the clock pulse. Clock
triggering occurs at a voltage level and is not directly
related to the rise time of the clock pulse. Following
the hold-time interval, data at the D input can be
changed without affecting the level at the output.
NanoFree™ package technology is a major
breakthrough in IC packaging concepts, using the die
as the package.
This device is fully specified for partial-power-down
applications using Ioff. The Ioff circuitry disables the
outputs when the device is powered down. This
inhibits current backflow into the device which
prevents damage to the device.
Device Information(1)
2 Applications
•
•
•
•
•
PART NUMBER
Test and Measurement
Enterprise Switching
Telecom Infrastructure
Personal Electronics
White Goods
PACKAGE
BODY SIZE
SN74LVC1G79DBV
SOT-23 (5)
2.90 mm × 1.60 mm
SN74LVC1G79DCK
SC70 (5)
2.00 mm × 1.25 mm
SN74LVC1G79DRL
SOT (5)
1.60 mm × 1.20 mm
SN74LVC1G79YZP
DSBGA (5)
1.14 mm × 0.91 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Logic Diagram (Positive Logic)
2
CLK
C
C
C
4
TG
C
C
Q
C
C
D
1
TG
TG
TG
C
C
C
Copyright © 2017, Texas Instruments Incorporated
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
SN74LVC1G79
SCES220U – APRIL 1999 – REVISED APRIL 2017
www.ti.com
Table of Contents
1
2
3
4
5
6
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
6.1
6.2
6.3
6.4
6.5
6.6
6.7
6.8
Absolute Maximum Ratings ...................................... 4
ESD Ratings.............................................................. 4
Recommended Operating Conditions....................... 5
Thermal Information .................................................. 5
Electrical Characteristics........................................... 6
Timing Requirements: TA = –40°C to +85°C ............ 6
Timing Requirements: TA = –40°C to +125°C .......... 6
Switching Characteristics: CL = 15 pF, TA = –40°C to
+85°C ......................................................................... 7
6.9 Switching Characteristics: CL = 30 or 50 pF, TA =
–40°C to +85°C.......................................................... 7
6.10 Switching Characteristics: CL = 30 pF or 50 pF, TA
= –40°C to +125°C..................................................... 7
6.11 Operating Characteristics........................................ 7
6.12 Typical Characteristics ............................................ 8
7
Parameter Measurement Information .................. 9
8
Detailed Description ............................................ 11
8.1
8.2
8.3
8.4
9
Overview .................................................................
Functional Block Diagram .......................................
Feature Description.................................................
Device Functional Modes........................................
11
11
11
12
Application and Implementation ........................ 13
9.1 Application Information............................................ 13
9.2 Typical Application ................................................. 13
10 Power Supply Recommendations ..................... 14
11 Layout................................................................... 14
11.1 Layout Guidelines ................................................. 14
11.2 Layout Example .................................................... 14
12 Device and Documentation Support ................. 15
12.1
12.2
12.3
12.4
12.5
12.6
Documentation Support ........................................
Receiving Notification of Documentation Updates
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
15
15
15
15
15
15
13 Mechanical, Packaging, and Orderable
Information ........................................................... 15
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision T (December 2013) to Revision U
Page
•
Added Device Information table, ESD Ratings table, Thermal Information table, Feature Description section, Device
Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout
section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information
section ................................................................................................................................................................................... 1
•
Changed thermal information to align with JEDEC standards. ............................................................................................. 5
Changes from Revision S (November 2007) to Revision T
Page
•
Updated document to new TI data sheet format. ................................................................................................................... 1
•
Removed Ordering Information table. .................................................................................................................................... 1
•
Updated Ioff in Features. ......................................................................................................................................................... 1
•
Updated operating temperature range. .................................................................................................................................. 5
•
Added ESD warning. ............................................................................................................................................................ 15
2
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SCES220U – APRIL 1999 – REVISED APRIL 2017
5 Pin Configuration and Functions
DBV Package
5-Pin SOT-23
Top View
D
1
CLK
2
GND
3
DRL Package
5-Pin SOT
Top View
5
VCC
4
Q
YZP Package
5-Pin DSBGA
Bottom View
DCK Package
5-Pin SC70
Top View
D
1
CLK
2
GND
3
5
4
1
2
C
GND
Q
B
CLK
A
D
VCC
Q
See mechanical drawings for dimensions.
VCC
Not to scale
Pin Functions
PIN
DBV, DCK,
DRL
YZP
D
1
A1
CLK
2
GND
3
Q
4
VCC
5
NAME
I/O
DESCRIPTION
I
Data input
B1
I
Positive-Edge-Triggered Clock input
C1
—
Ground
C2
O
Non-inverted output
A2
—
Positive Supply
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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
VCC
MIN
MAX
UNIT
Supply voltage
–0.5
6.5
V
(2)
VI
Input voltage
–0.5
6.5
V
VO
Voltage range applied to any output in the high-impedance or power-off state (2)
–0.5
6.5
V
VO
Voltage range applied to any output in the high or low state (2) (3)
–0.5
VCC + 0.5
V
IIK
Input clamp current
VI < 0
–50
mA
IOK
Output clamp current
VO < 0
–50
mA
IO
Continuous output current
±50
mA
±100
mA
150
°C
150
°C
Continuous current through VCC or GND
Tstg
Storage temperature
TJ
Junction temperature
(1)
(2)
(3)
–65
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The input negative-voltage and output voltage ratings may be exceeded if the input and output current ratings are observed.
The value of VCC is provided in the Recommended Operating Conditions table.
6.2 ESD Ratings
VALUE
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001
V(ESD)
Electrostatic
discharge
(1)
±2000
Charged device model (CDM), per JEDEC specification JESD22-C101 (2)
Machine Model (MM), A115-A
(1)
(2)
4
UNIT
±1000
V
200
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
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SCES220U – APRIL 1999 – REVISED APRIL 2017
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted) (1)
VCC
Supply voltage
MIN
MAX
Operating
1.65
5.5
Data retention only
1.5
VCC = 1.65 V to 1.95 V
VIH
1.7
VCC = 3 V to 3.6 V
0.7 × VCC
VCC = 1.65 V to 1.95 V
Low-level input voltage
V
2
VCC = 4.5 V to 5.5 V
VIL
V
0.65 × VCC
VCC = 2.3 V to 2.7 V
High-level input voltage
UNIT
0.35 × VCC
VCC = 2.3 V to 2.7 V
0.7
VCC = 3 V to 3.6 V
0.8
VCC = 4.5 V to 5.5 V
V
0.3 × VCC
VI
Input voltage
0
5.5
V
VO
Output voltage
0
VCC
V
VCC = 1.65 V
–4
VCC = 2.3 V
IOH
High-level output current
–8
–16
VCC = 3 V
VCC = 4.5 V
–32
VCC = 1.65 V
4
VCC = 2.3 V
IOL
Low-level output current
Δt/Δv
TA
(1)
8
16
VCC = 3 V
Input transition rise or fall rate
mA
–24
mA
24
VCC = 4.5 V
32
VCC = 1.8 V ± 0.15 V, 2.5 V ± 0.2 V
20
VCC = 3.3 V ± 0.3 V
10
VCC = 5 V ± 0.5 V
5
Operating free-air temperature
–40
ns/V
125
°C
All unused inputs of the device must be held at VCC or GND to ensure proper device operation. See Implications of Slow or Floating
CMOS Inputs, SCBA004.
6.4 Thermal Information
SN74LVC1G79
THERMAL METRIC (1)
DBV (SOT-23)
DCK (SC70)
DRL (SOT)
YZP (DSBGA)
5 PINS
5 PINS
5 PINS
5 PINS
UNIT
RθJA
Junction-to-ambient thermal resistance
247.2
277.6
294.3
144.4
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
154.5
179.5
129.9
1.3
°C/W
RθJB
Junction-to-board thermal resistance
86.8
75.9
143.4
39.9
°C/W
ψJT
Junction-to-top characterization parameter
58.0
49.7
14.3
0.5
°C/W
ψJB
Junction-to-board characterization
parameter
86.4
75.1
144.0
39.7
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
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6.5 Electrical Characteristics
over recommended operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
VCC
IOH = –100 µA
VOH
1.65 V to 5.5 V
VCC – 0.1
1.2
1.2
IOH = –8 mA
2.3 V
1.9
1.9
2.4
2.4
2.3
2.3
3V
MAX
IOL = 100 µA
1.65 V to 5.5 V
0.1
0.1
IOL = 4 mA
1.65 V
0.45
0.45
IOL = 8 mA
2.3 V
0.3
0.3
0.4
0.4
VI = 5.5 V or GND,
ΔICC
One input at VCC – 0.6 V,
Other inputs at VCC or GND
Ci
VI = VCC or GND
IO = 0
V
0.55
0.55
4.5 V
0.55
0.55
0 to 5.5 V
±10
±5
µA
0
±10
±10
µA
1.65 V to 5.5 V
10
10
µA
3 V to 5.5 V
500
500
µA
VI = 5.5 V or GND
ICC
3.8
3V
IOL = 32 mA
VI or VO = 5.5 V
UNIT
V
4.5 V
Ioff
3.8
TYP (1)
IOH = –32 mA
IOL = 24 mA
(1)
MIN
VCC – 0.1
IOL = 16 mA
All inputs
TA = –40°C to +125°C
MAX
1.65 V
IOH = –24 mA
II
TYP (1)
MIN
IOH = –4 mA
IOH = –16 mA
VOL
TA = –40°C to +85°C
3.3 V
4
4
pF
VCC = 5 V
± 0.5 V
UNIT
All typical values are at VCC = 3.3 V, TA = 25°C.
6.6 Timing Requirements: TA = –40°C to +85°C
over operating free-air temperature range (unless otherwise noted) (see Figure 3)
TA = –40°C to +85°C
VCC = 1.8
± 0.15 V
PARAMETER
MIN
fclock
Clock frequency
tw
Pulse duration, CLK high or low
tsu
Setup time before CLK↑
th
Hold time, data after CLK↑
VCC = 2.5
± 0.2 V
MAX
MIN
VCC = 3.3 V
± 0.3 V
MAX
160
MIN
MAX
160
MIN
MAX
160
160
2.5
2.5
2.5
2.5
Data high
2.2
1.4
1.3
1.2
Data low
2.6
1.4
1.3
1.2
0.3
0.4
1
0.5
MHz
ns
ns
ns
6.7 Timing Requirements: TA = –40°C to +125°C
over operating free-air temperature range (unless otherwise noted) (see Figure 3)
TA = –40°C to +125°C
VCC = 1.8
± 0.15 V
PARAMETER
MIN
fclock
Clock frequency
tw
Pulse duration, CLK high or low
tsu
Setup time before CLK↑
th
Hold time, data after CLK↑
6
VCC = 2.5
± 0.2 V
MAX
MIN
VCC = 3.3 V
± 0.3 V
MAX
160
MIN
160
VCC = 5 V
± 0.5 V
MAX
MIN
160
MAX
160
2.5
2.5
2.5
2.5
Data high
2.2
1.4
1.3
1.2
Data low
2.6
1.4
1.3
1.2
0.3
0.4
1
0.5
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UNIT
MHz
ns
ns
ns
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SCES220U – APRIL 1999 – REVISED APRIL 2017
6.8 Switching Characteristics: CL = 15 pF, TA = –40°C to +85°C
over recommended operating free-air temperature range, CL = 15 pF (unless otherwise noted) (see Figure 3)
TA = –40°C to +85°C
PARAMETER
FROM
(INPUT)
TO
(OUTPUT)
VCC = 1.8 V
± 0.15 V
MIN
fmax
VCC = 2.5 V
± 0.2 V
MAX
MIN
160
tpd
CLK
Q
VCC = 3.3 V
± 0.3 V
MAX
160
2.5
9.1
MIN
VCC = 5 V
± 0.5 V
MAX
160
1.2
6
MIN
UNIT
MAX
160
1
4
0.8
MHz
3.8
ns
6.9 Switching Characteristics: CL = 30 or 50 pF, TA = –40°C to +85°C
over recommended operating free-air temperature range, CL = 30 pF or 50 pF (unless otherwise noted) (see Figure 4)
TA = –40°C to +85°C
PARAMETER
FROM
(INPUT)
TO
(OUTPUT)
VCC = 1.8 V
± 0.15 V
MIN
fmax
VCC = 2.5 V
± 0.2 V
MAX
MIN
160
tpd
CLK
Q
VCC = 3.3 V
± 0.3 V
MAX
160
3.9
9.9
MIN
VCC = 5 V
± 0.5 V
MAX
160
2
7
MIN
UNIT
MAX
160
1.7
5
1
MHz
4.5
ns
6.10 Switching Characteristics: CL = 30 pF or 50 pF, TA = –40°C to +125°C
over recommended operating free-air temperature range, CL = 30 pF or 50 pF (unless otherwise noted) (see Figure 4)
TA = –40°C to +125°C
PARAMETER
FROM
(INPUT)
TO
(OUTPUT)
VCC = 1.8 V
± 0.15 V
MIN
fmax
VCC = 2.5 V
± 0.2 V
MAX
MIN
160
tpd
CLK
Q
3.9
MAX
160
12
2
VCC = 3.3 V
± 0.3 V
MIN
VCC = 5 V
± 0.5 V
MAX
160
8.5
1.7
MIN
UNIT
MAX
160
6
1
MHz
5
ns
6.11 Operating Characteristics
TA = 25°C
PARAMETER
Cpd
Power dissipation capacitance
TEST
CONDITIONS
VCC = 1.8 V
VCC = 2.5 V
VCC = 3.3 V
VCC = 5 V
TYP
TYP
TYP
TYP
f = 10 MHz
26
26
27
30
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UNIT
pF
7
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SCES220U – APRIL 1999 – REVISED APRIL 2017
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6.12 Typical Characteristics
This plot shows the different ICC values for various voltages on the data input (D). Voltage sweep on the input is from 0 V to
6.5 V.
2
20
VCC = 1.8 V
VCC = 2.5 V
1.6
1.4
1.2
1
0.8
0.6
16
14
12
10
8
6
0.4
4
0.2
2
0
0
0
0.5
1
1.5
VCC = 1.8 V
2 2.5 3 3.5 4 4.5
Data (D) Input Voltage [V]
5
5.5
6
6.5
0
0.5
1
1.5
ICCv
VCC = 2.5 V
VCC = 3.3 V
Figure 1. Supply Current (ICC) vs Data (D) Input Voltage
8
VCC = 3.3 V
VCC = 5.0 V
18
Supply Current ICC [mA]
Supply Current ICC [mA]
1.8
2 2.5 3 3.5 4 4.5
Data (D) Input Voltage [V]
5
5.5
6
6.5
ICCv
VCC = 5 V
Figure 2. Supply Current (ICC) vs Data (D) Input Voltage
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SCES220U – APRIL 1999 – REVISED APRIL 2017
7 Parameter Measurement Information
VLOAD
S1
RL
From Output
Under Test
Open
TEST
GND
CL
(see Note A)
S1
Open
VLOAD
tPLH/tPHL
tPLZ/tPZL
tPHZ/tPZH
RL
GND
LOAD CIRCUIT
INPUTS
VCC
1.8 V ± 0.15 V
2.5 V ± 0.2 V
3.3 V ± 0.3 V
5 V ± 0.5 V
VI
tr/tf
VCC
VCC
3V
VCC
£2 ns
£2 ns
£2.5 ns
£2.5 ns
VM
VLOAD
CL
RL
VD
VCC/2
VCC/2
1.5 V
VCC/2
2 × VCC
2 × VCC
6V
2 × VCC
15 pF
15 pF
15 pF
15 pF
1 MW
1 MW
1 MW
1 MW
0.15 V
0.15 V
0.3 V
0.3 V
VI
Timing Input
VM
0V
tW
tsu
VI
Input
VM
VM
th
VI
Data Input
VM
VM
0V
0V
VOLTAGE WAVEFORMS
PULSE DURATION
VOLTAGE WAVEFORMS
SETUP AND HOLD TIMES
VI
VM
Input
VM
0V
tPLH
VOH
VM
VOL
tPHL
VM
VM
0V
tPLZ
Output
Waveform 1
S1 at VLOAD
(see Note B)
tPLH
VLOAD/2
VM
tPZH
VOH
Output
VM
tPZL
tPHL
VM
Output
VI
Output
Control
VM
VOL
VOLTAGE WAVEFORMS
PROPAGATION DELAY TIMES
INVERTING AND NONINVERTING OUTPUTS
Output
Waveform 2
S1 at GND
(see Note B)
VOL + VD
VOL
tPHZ
VM
VOH – VD
VOH
»0 V
VOLTAGE WAVEFORMS
ENABLE AND DISABLE TIMES
LOW- AND HIGH-LEVEL ENABLING
NOTES: A. CL includes probe and jig capacitance.
B. Waveform 1 is for an output with internal conditions such that the output is low, except when disabled by the output control.
Waveform 2 is for an output with internal conditions such that the output is high, except when disabled by the output control.
C. All input pulses are supplied by generators having the following characteristics: PRR £ 10 MHz, ZO = 50 W.
D. The outputs are measured one at a time, with one transition per measurement.
E. tPLZ and tPHZ are the same as tdis.
F. tPZL and tPZH are the same as ten.
G. tPLH and tPHL are the same as tpd.
H. All parameters and waveforms are not applicable to all devices.
Figure 3. Load Circuit and Voltage Waveforms
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Parameter Measurement Information (continued)
VLOAD
S1
RL
From Output
Under Test
Open
TEST
GND
CL
(see Note A)
S1
Open
VLOAD
tPLH/tPHL
tPLZ/tPZL
tPHZ/tPZH
RL
GND
LOAD CIRCUIT
INPUTS
VCC
1.8 V ± 0.15 V
2.5 V ± 0.2 V
3.3 V ± 0.3 V
5 V ± 0.5 V
VI
tr/tf
VCC
VCC
3V
VCC
£2 ns
£2 ns
£2.5 ns
£2.5 ns
VM
VLOAD
CL
RL
VD
VCC/2
VCC/2
1.5 V
VCC/2
2 × VCC
2 × VCC
6V
2 × VCC
30 pF
30 pF
50 pF
50 pF
1 kW
500 W
500 W
500 W
0.15 V
0.15 V
0.3 V
0.3 V
VI
Timing Input
VM
0V
tW
tsu
VI
Input
VM
VM
th
VI
Data Input
VM
VM
0V
0V
VOLTAGE WAVEFORMS
PULSE DURATION
VOLTAGE WAVEFORMS
SETUP AND HOLD TIMES
VI
VM
Input
VM
0V
tPLH
VOH
Output
VM
VOL
tPHL
VM
VM
0V
Output
Waveform 1
S1 at VLOAD
(see Note B)
tPLH
tPLZ
VLOAD/2
VM
tPZH
VOH
Output
VM
tPZL
tPHL
VM
VI
Output
Control
VM
VOL
VOLTAGE WAVEFORMS
PROPAGATION DELAY TIMES
INVERTING AND NONINVERTING OUTPUTS
Output
Waveform 2
S1 at GND
(see Note B)
VOL + VD
VOL
tPHZ
VM
VOH – VD
VOH
»0 V
VOLTAGE WAVEFORMS
ENABLE AND DISABLE TIMES
LOW- AND HIGH-LEVEL ENABLING
NOTES: A. CL includes probe and jig capacitance.
B. Waveform 1 is for an output with internal conditions such that the output is low, except when disabled by the output control.
Waveform 2 is for an output with internal conditions such that the output is high, except when disabled by the output control.
C. All input pulses are supplied by generators having the following characteristics: PRR £ 10 MHz, ZO = 50 W.
D. The outputs are measured one at a time, with one transition per measurement.
E. tPLZ and tPHZ are the same as tdis.
F. tPZL and tPZH are the same as ten.
G. tPLH and tPHL are the same as tpd.
H. All parameters and waveforms are not applicable to all devices.
Figure 4. Load Circuit and Voltage Waveforms
10
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8 Detailed Description
8.1 Overview
The SN74LVC1G79 is a single positive-edge-triggered D-type flip-flop. Data at the input (D) is transferred to the
output (Q) on the positive-going edge of the clock pulse when the setup time requirement is met. Because the
clock triggering occurs at a voltage level, it is not directly related to the rise time of the clock pulse. This allows
for data at the input to be changed without affecting the level at the output, following the hold-time interval.
8.2 Functional Block Diagram
CLK
2
C
C
C
4
TG
C
C
Q
C
C
D
1
TG
TG
TG
C
C
C
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Figure 5. Logic Diagram (Positive Logic)
8.3 Feature Description
8.3.1 Balanced High-Drive CMOS Push-Pull Outputs
A balanced output allows the device to sink and source similar currents. The high drive capability of this device
creates fast edges into light loads so routing and load conditions should be considered to prevent ringing.
Additionally, the outputs of this device are capable of driving larger currents than the device can sustain without
being damaged. It is important for the power output of the device to be limited to avoid thermal runaway and
damage due to over-current. The electrical and thermal limits defined the in the Absolute Maximum Ratings must
be followed at all times.
8.3.2 Standard CMOS Inputs
Standard CMOS inputs are high impedance and are typically modeled as a resistor in parallel with the input
capacitance given in the Electrical Characteristics. The worst case resistance is calculated with the maximum
input voltage, given in the Recommended Operating Conditions, and the maximum input leakage current, given
in the Electrical Characteristics, using ohm's law (R = V ÷ I).
Signals applied to the inputs need to have fast edge rates, as defined by Δt/Δv in Recommended Operating
Conditions to avoid excessive currents and oscillations. If tolerance to a slow or noisy input signal is required, a
device with a Schmitt-trigger input should be utilized to condition the input signal prior to the standard CMOS
input.
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Feature Description (continued)
8.3.3 Clamp Diodes
The inputs and outputs to this device have negative clamping diodes.
CAUTION
Voltages beyond the values specified in the Absolute Maximum Ratings table can
cause damage to the device. The input negative-voltage and output voltage ratings
may be exceeded if the input and output clamp-current ratings are observed.
VCC
Device
Logic
Input
Output
-IIK
-IOK
GND
Figure 6. Electrical Placement of Clamping Diodes for Each Input and Output
8.3.4 Partial Power Down (Ioff)
The inputs and outputs for this device enter a high impedance state when the supply voltage is 0 V. The
maximum leakage into or out of any input or output pin on the device is specified by Ioff in the Electrical
Characteristics.
8.3.5 Over-Voltage Tolerant Inputs
Input signals to this device can be driven above the supply voltage so long as they remain below the maximum
input voltage value specified in the Absolute Maximum Ratings.
8.4 Device Functional Modes
Table 1 lists the functional modes of SN74LVC1G79.
Table 1. Function Table
INPUTS
12
CLK
D
OUTPUT
Y
↑
H
H
↑
L
L
L
X
Q0
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9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
A useful application for the SN74LVC1G79 is using it as a data latch with low-voltage data retention. This
application implements the use of a microcontroller GPIO pin to act as a clock to set the output state and a
second GPIO to provide the input data. If the SN74LVC1G79 is being powered from 1.8 V and there is concern
that a power glitch could exist as low as 1.5 V, the device will retain the state of the Q output. An example of this
data retention is shown in Figure 8 where the VCC drops to 1.5 V and the Q output maintains the HIGH output
state when VCC returns to 1.8 V. If the VCC voltage drops below 1.5 V, data retention is not guaranteed.
9.2 Typical Application
VCC > 1.65V for Operation
VCC > 1.50V for Data Retention
GPIO
1
MCU
VCC
D
5
SN74LVC1G79
CLK
2
CLK
3
GND
Q
4
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Figure 7. Low Voltage Data Retention With SN74LVC1G79
9.2.1 Design Requirements
The SN74LVC1G79 device uses CMOS technology and has balanced output drive. Take care to avoid bus
contention because it can drive currents that would exceed maximum limits.
9.2.2 Detailed Design Procedure
1. Recommended input conditions:
– For rise time and fall time specifications, see Δt/Δv in Recommended Operating Conditions.
– For specified high and low levels, see VIH and VIL in Recommended Operating Conditions.
– Input voltages are recommended to not go below 0 V and not exceed 5.5 V for any VCC. See
Recommended Operating Conditions.
2. Recommended output conditions:
– Load currents should not exceed ±50 mA. See Absolute Maximum Ratings.
– Output voltages are recommended to not go below 0 V and not exceed the VCC voltage. See
Recommended Operating Conditions.
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Typical Application (continued)
9.2.3 Application Curve
Positive Supply Voltage (VCC)
Non-inverted Output (Q)
Figure 8. Data Retention With VCC Glitch Down to 1.5 V
10 Power Supply Recommendations
The power supply can be any voltage between the minimum and maximum supply voltage rating listed in
Recommended Operating Conditions. A 0.1-µF bypass capacitor is recommended to be connected from the VCC
terminal to GND to prevent power disturbance. To reject different frequencies of noise, use multiple bypass
capacitors in parallel. Capacitors with values of 0.1 µF and 1 µF are commonly used in parallel. The bypass
capacitor must be installed as close to the power terminal as possible for best results.
11 Layout
11.1 Layout Guidelines
When a PCB trace turns a corner at a 90° angle, a reflection can occur. A reflection occurs primarily because of
the change of width of the trace. At the apex of the turn, the trace width increases to 1.414 times the width. This
increase upsets the transmission-line characteristics, especially the distributed capacitance and self–inductance
of the trace which results in the reflection. Not all PCB traces can be straight and therefore some traces must
turn corners. Figure 9 shows progressively better techniques of rounding corners. Only the last example (BEST)
maintains constant trace width and minimizes reflections.
11.2 Layout Example
BETTER
BEST
2W
WORST
1W min.
W
Figure 9. Trace Example
14
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12 Device and Documentation Support
12.1 Documentation Support
12.1.1 Related Documentation
For related documentation see the following:
• Implications of Slow or Floating CMOS Inputs, SCBA004
• Understanding and Interpreting Standard Logic Data Sheets, SZZA036
• Power-Up Behavior of Clocked Devices, SCHA005
12.2 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
12.3 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
12.4 Trademarks
NanoFree, E2E are trademarks of Texas Instruments.
All other trademarks are the property of their respective owners.
12.5 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
12.6 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical packaging and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser based versions of this data sheet, refer to the left hand navigation.
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PACKAGE OPTION ADDENDUM
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14-Oct-2022
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
SN74LVC1G79DBVR
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU | SN
Level-1-260C-UNLIM
-40 to 125
(C795, C79F, C79J,
C79R)
Samples
SN74LVC1G79DBVT
ACTIVE
SOT-23
DBV
5
250
RoHS & Green
NIPDAU | SN
Level-1-260C-UNLIM
-40 to 125
(C795, C79F, C79J,
C79R)
Samples
SN74LVC1G79DBVTG4
ACTIVE
SOT-23
DBV
5
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
C79F
Samples
SN74LVC1G79DCKR
ACTIVE
SC70
DCK
5
3000
RoHS & Green
NIPDAU | SN
Level-1-260C-UNLIM
-40 to 125
(CR5, CRF, CRJ, CR
R)
Samples
SN74LVC1G79DCKRG4
ACTIVE
SC70
DCK
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
CR5
Samples
SN74LVC1G79DCKT
ACTIVE
SC70
DCK
5
250
RoHS & Green
NIPDAU | SN
Level-1-260C-UNLIM
-40 to 125
(CR5, CRF, CRJ, CR
R)
Samples
SN74LVC1G79DCKTG4
ACTIVE
SC70
DCK
5
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
CR5
Samples
SN74LVC1G79DRLR
ACTIVE
SOT-5X3
DRL
5
4000
RoHS & Green
NIPDAUAG
Level-1-260C-UNLIM
-40 to 125
(CR7, CRR)
Samples
SN74LVC1G79YZPR
ACTIVE
DSBGA
YZP
5
3000
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 85
(CR7, CRN)
Samples
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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