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SN74LVC1G86
SCES222Q – APRIL 1999 – REVISED JUNE 2017
SN74LVC1G86 Single 2-Input Exclusive-OR Gate
1 Features
3 Description
•
The SN74LVC1G86 device performs the Boolean
function Y = AB + AB in positive logic. This single 2input exclusive-OR gate is designed for 1.65-V to 5.5V VCC operation.
1
•
•
•
•
•
•
•
•
•
•
ESD Protection Exceeds JESD 22
– 2000-V Human-Body Model (A114-A)
– 1000-V Charged-Device Model (C101)
Qualified from –40°C to +125°C
Supports 5-V VCC Operation
Inputs Are Over Voltage Tolerant up to 5.5 V
Supports Down Translation to VCC
Maximum tpd of 4 ns at 3.3 V and 15-pF load
Low Power Consumption, 10-µA Maximum ICC At
85°C
±24-mA Output Drive at 3.3 V
Ioff Supports Partial-Power-Down Mode, and BackDrive Protection
Available in the Texas Instruments
NanoFree™ Package
Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
2 Applications
•
•
•
•
•
Wireless Headsets
Motor Drives and Controls
TVs
Set-Top Boxes
Audio
If the input is low, the other input is reproduced in
true form at the output. If the input is high, the signal
on the other input is reproduced inverted at the
output. This device has low power consumption with
maximum tpd of 4 ns at 3.3 V and 15-pF capacitive
load. The maximum output drive is ±32-mA at 4.5 V
and ±24-mA at 3.3 V.
This device is fully specified for partial-power-down
applications using Ioff. The Ioff circuitry disables the
outputs, preventing damaging current back flow
through the device when it is powered down.
Device Information(1)
PART NUMBER
PACKAGE
BODY SIZE (NOM)
SN74LVC1G86DBV
SOT-23 (5)
2.90 mm × 1.60 mm
SN74LVC1G86DCK
SC70 (5)
2.00 mm × 1.25 mm
SN74LVC1G86DRL
SOT (5)
1.60 mm × 1.20 mm
SN74LVC1G86YZP
DSBGA (5)
1.44 mm × 0.94 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Functional Block Diagram
EXCLUSIVE OR
=1
Copyright © 2017, Texas Instruments Incorporated
An exclusive-OR gate has many applications, some of which can be represented better by alternative logic symbols.
These are five equivalent exclusive-OR symbols valid for an SN74LVC1G86 gate in positive logic; negation may be
shown at any two ports.
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
SN74LVC1G86
SCES222Q – APRIL 1999 – REVISED JUNE 2017
www.ti.com
Table of Contents
1
2
3
4
5
6
7
8
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
6.1
6.2
6.3
6.4
6.5
6.6
6.7
6.8
6.9
4
4
4
5
5
6
6
6
6
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Switching Characteristics, CL = 15 pF ......................
Switching Characteristics, CL = 30 pF or 50 pF........
Operating Characteristics..........................................
Typical Characteristics ..............................................
Parameter Measurement Information .................. 7
Detailed Description .............................................. 8
8.1 Overview ................................................................... 8
8.2 Functional Block Diagram ......................................... 8
8.3 Feature Description................................................... 8
8.4 Function Table .......................................................... 9
9
Application and Implementation ........................ 10
9.1 Application Information............................................ 10
9.2 Typical Application ................................................. 10
10 Power Supply Recommendations ..................... 11
11 Layout................................................................... 12
11.1 Layout Guidelines ................................................. 12
11.2 Layout Example .................................................... 12
12 Device and Documentation Support ................. 13
12.1
12.2
12.3
12.4
12.5
Receiving Notification of Documentation Updates
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
13
13
13
13
13
13 Mechanical, Packaging, and Orderable
Information ........................................................... 13
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision P (September 2015) to Revision Q
Page
•
Changed YZP (DSBGA) package pinout diagram and added DSBGA column ..................................................................... 3
•
Added Balanced High-Drive CMOS Push-Pull Outputs, Standard CMOS Inputs, Clamp Diodes, Partial Power Down
(Ioff), and Over-voltage Tolerant Inputs sections..................................................................................................................... 8
Changes from Revision O (December 2013) to Revision P
•
Page
Added Applications section, Device Information table, ESD Ratings table, Thermal Information table, Typical
Characteristics section, Feature Description section, Device Functional Modes, Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section ................................................................................................. 1
Changes from Revision N (January 2007) to Revision O
Page
•
Updated document to new TI data sheet format. ................................................................................................................... 1
•
Removed Ordering Information table. .................................................................................................................................... 1
•
Updated Ioff in Features. ......................................................................................................................................................... 1
•
Updated operating temperature range. .................................................................................................................................. 4
2
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SCES222Q – APRIL 1999 – REVISED JUNE 2017
5 Pin Configuration and Functions
DBV Package
5-Pin SOT-23
Top View
A
1
B
2
GND
DCK Package
5-Pin SC70
Top View
VCC
5
3
A
1
B
2
GND
3
B
2
GND
3
4
Y
YZP Package
5-Pin DSBGA
Bottom View
DRL Package
5-Pin SOT
Top View
1
VCC
Y
4
A
5
5
VCC
4
Y
1
2
C
GND
Y
B
B
A
A
VCC
Not to scale
Pin Functions (1)
PIN
NAME
I/O
DESCRIPTION
DBV, DRL, DCK
DSBGA
A
1
A1
I
Input A
B
2
B1
I
Input B
GND
3
C1
—
Ground
VCC
5
A2
—
Positive Supply
Y
4
C2
O
Output Y
(1)
See mechanical drawings for dimensions.
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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
VCC
MIN
MAX
UNIT
Supply voltage
–0.5
6.5
V
(2)
VI
Input voltage
–0.5
6.5
V
VO
Voltage applied to any output in the high-impedance or power-off state (2)
–0.5
6.5
V
VO
Voltage applied to any output in the high or low state (2) (3)
–0.5
VCC + 0.5
V
IIK
Input clamp current
VI < 0
–50
mA
IOK
Output clamp current
VO < 0
–50
mA
IO
Continuous output current
±50
mA
Continuous current through VCC or GND
±100
mA
TJ
Junction temperature
150
°C
Tstg
Storage temperature
150
°C
(1)
(2)
(3)
–65
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The input negative-voltage and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
The value of VCC is provided in the Recommended Operating Conditions table.
6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic
discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001
(1)
2000
Charged-device model (CDM), per JEDEC specification JESD22-C101 (2)
1000
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted) (1)
VCC
Supply voltage
MIN
MAX
Operating
1.65
5.5
Data retention only
1.5
VCC = 1.65 V to 1.95 V
VIH
High-level input voltage
VCC = 2.3 V to 2.7 V
VCC = 3 V to 3.6 V
VCC = 4.5 V to 5.5 V
Low-level input voltage
VI
Input voltage
VO
Output voltage
1.7
High-level output current
0.7 × VCC
0.35 × VCC
VCC = 2.3 V to 2.7 V
0.7
VCC = 3 V to 3.6 V
0.8
4
0.3 × VCC
5.5
V
0
VCC
V
–4
VCC = 2.3 V
–8
VCC = 3 V
V
0
VCC = 1.65 V
VCC = 4.5 V
(1)
V
2
VCC = 4.5 V to 5.5 V
IOH
V
0.65 × VCC
VCC = 1.65 V to 1.95 V
VIL
UNIT
–16
mA
–24
–32
All unused inputs of the device must be held at VCC or GND to ensure proper device operation. See Implications of Slow or Floating
CMOS Inputs, SCBA004.
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Recommended Operating Conditions (continued)
over operating free-air temperature range (unless otherwise noted)(1)
MIN
MAX
VCC = 1.65 V
4
VCC = 2.3 V
IOL
Low-level output current
8
16
VCC = 3 V
Δt/Δv Input transition rise or fall rate
Operating free-air temperature
mA
24
VCC = 4.5 V
32
VCC = 1.8 V ± 0.15 V, 2.5 V ± 0.2 V
20
VCC = 3.3 V ± 0.3 V
10
VCC = 5 V ± 0.5 V
TA
UNIT
ns/V
5
YZP package
–40
85
DCK, DBV, and DRL packages
–40
125
°C
6.4 Thermal Information
SN74LVC1G86
THERMAL METRIC
RθJA
(1)
(1)
Junction-to-ambient thermal resistance
DBV (SOT-23)
DCK (SC70)
YZP (DSBGA)
5 PINS
5 PINS
5 PINS
206
252
132
UNIT
°C/W
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6.5 Electrical Characteristics
over recommended operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
IOH = –100 µA
VOH
1.65 V to 5.5 V
1.2
IOH = –8 mA
2.3 V
1.9
3V
2.3
IOL = 100 µA
1.65 V to 5.5 V
0.1
IOL = 4 mA
1.65 V
0.45
IOL = 8 mA
2.3 V
0.3
3.8
0.4
3V
IOL = 32 mA
Ioff
VI or VO = 5.5 V
ICC
VI = VCC or GND,
ΔICC
One input at VCC – 0.6 V,
Other inputs at VCC or GND
Ci
VI = VCC or GND
–40°C to 85°C
IO = 0
–40°C to 125°C
V
0.55
4.5 V
VI = 5.5 V or GND
UNIT
V
2.4
4.5 V
IOL = 24 mA
(1)
MAX
IOH = –32 mA
IOL = 16 mA
A or B input
TYP (1)
VCC – 0.1
1.65 V
IOH = –24 mA
II
MIN
IOH = –4 mA
IOH = –16 mA
VOL
VCC
0.55
0 to 5.5 V
±5
µA
0
±10
µA
10
1.65 V to 5.5 V
15
3 V to 5.5 V
3.3 V
500
6
µA
µA
pF
All typical values are at VCC = 3.3 V, TA = 25°C.
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6.6 Switching Characteristics, CL = 15 pF
over recommended operating free-air temperature range (unless otherwise noted) (see Figure 2)
PARAMETE
R
tpd
FROM
(INPUT)
TO
(OUTPUT)
A or B
Y
VCC = 1.8 V
± 0.15 V
TEST CONDITIONS
TA = –40°C to +85°C
VCC = 2.5 V
± 0.2 V
VCC = 3.3 V
± 0.3 V
VCC = 5 V
± 0.5 V
UNIT
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX
2.1
9.1
1
4.5
0.6
4
0.8
3.3
ns
6.7 Switching Characteristics, CL = 30 pF or 50 pF
over recommended operating free-air temperature range (unless otherwise noted)
PARAMETER
tpd
FROM
(INPUT)
TO
(OUTPUT)
A or B
Y
VCC = 1.8 V
± 0.15 V
TEST CONDITIONS
VCC = 2.5 V
± 0.2 V
VCC = 3.3 V
± 0.3 V
VCC = 5 V
± 0.5 V
UNIT
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX
–40°C to +85°C temperature
range, see Figure 2
3.5
9.9
1.8
5.5
1.3
5
1
4
–40°C to +125°C temperature
range, see Figure 2
3.5
12
1.8
7
1.3
6
1
5
ns
6.8 Operating Characteristics
TA = 25°C
PARAMETER
Cpd
TEST CONDITIONS
Power dissipation capacitance
VCC = 1.8 V
f = 10 MHz
VCC = 2.5 V
VCC = 3.3 V
VCC = 5 V
TYP
TYP
TYP
TYP
22
22
22
24
UNIT
pF
6.9 Typical Characteristics
5
VOH(V)
4.5
4
3.5
3
VCC =4.5 V
VIH =3.1 V
VIL =1.35 V
2.5
2
1.5
85o C
1
25o C
0.5
-40o C
0
-0.5
-1
0
20
40
60
80
100
IOH(mA)
120
140
160
180
200
Figure 1. Voh vs Ioh at 4.5 V
6
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7 Parameter Measurement Information
VLOAD
S1
RL
From Output
Under Test
Open
TEST
GND
CL
(see Note A)
S1
Open
VLOAD
tPLH/tPHL
tPLZ/tPZL
tPHZ/tPZH
RL
GND
LOAD CIRCUIT
INPUTS
VCC
1.8 V ± 0.15 V
2.5 V ± 0.2 V
3.3 V ± 0.3 V
5 V ± 0.5 V
VI
tr/tf
VCC
VCC
3V
VCC
≤2 ns
≤2 ns
≤2.5 ns
≤2.5 ns
VM
VLOAD
CL
RL
VD
VCC/2
VCC/2
1.5 V
VCC/2
2 × VCC
2 × VCC
6V
2 × VCC
15 pF
15 pF
15 pF
15 pF
1 MΩ
1 MΩ
1 MΩ
1 MΩ
0.15 V
0.15 V
0.3 V
0.3 V
VI
Timing Input
VM
0V
tW
tsu
VI
Input
VM
VM
th
VI
Data Input
VM
VM
0V
0V
VOLTAGE WAVEFORMS
PULSE DURATION
VOLTAGE WAVEFORMS
SETUP AND HOLD TIMES
VI
VM
Input
VM
0V
tPLH
VOH
VM
VOL
tPHL
VM
VM
0V
tPLZ
Output
Waveform 1
S1 at VLOAD
(see Note B)
tPLH
VLOAD/2
VM
tPZH
VOH
Output
VM
tPZL
tPHL
VM
Output
VI
Output
Control
VM
VOL
VOLTAGE WAVEFORMS
PROPAGATION DELAY TIMES
INVERTING AND NONINVERTING OUTPUTS
Output
Waveform 2
S1 at GND
(see Note B)
VOL + VD
VOL
tPHZ
VM
VOH – VD
VOH
»0 V
VOLTAGE WAVEFORMS
ENABLE AND DISABLE TIMES
LOW- AND HIGH-LEVEL ENABLING
NOTES: A. CL includes probe and jig capacitance.
B. Waveform 1 is for an output with internal conditions such that the output is low, except when disabled by the output control.
Waveform 2 is for an output with internal conditions such that the output is high, except when disabled by the output control.
C. All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω.
D. The outputs are measured one at a time, with one transition per measurement.
E. tPLZ and tPHZ are the same as tdis.
F. tPZL and tPZH are the same as ten.
G. tPLH and tPHL are the same as tpd.
H. All parameters and waveforms are not applicable to all devices.
Figure 2. Load Circuit and Voltage Waveforms
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8 Detailed Description
8.1 Overview
The SN74LVC1G86 device performs the Boolean function Y = AB + AB in positive logic. This single 2-input
exclusive-OR gate is designed for 1.65-V to 5.5-V VCC operation.
A common application is as a true and complement element. If the input is low, the other input is reproduced in
true form at the output. If the input is high, the signal on the other input is reproduced inverted at the output.
NanoFree package technology is a major breakthrough in IC packaging concepts, using the die as the package.
This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs,
preventing damaging current backflow through the device when it is powered down.
8.2 Functional Block Diagram
EXCLUSIVE OR
=1
Copyright © 2017, Texas Instruments Incorporated
These are five equivalent exclusive-OR symbols valid for an SN74LVC1G86 gate in positive logic; negation may be
shown at any two ports.
8.3 Feature Description
8.3.1 Balanced High-Drive CMOS Push-Pull Outputs
A balanced output allows the device to sink and source similar currents. The high drive capability of this device
creates fast edges into light loads so routing and load conditions should be considered to prevent ringing.
Additionally, the outputs of this device are capable of driving larger currents than the device can sustain without
being damaged. It is important for the power output of the device to be limited to avoid thermal runaway and
damage due to over-current. The electrical and thermal limits defined the in the Absolute Maximum Ratings must
be followed at all times.
8.3.2 Standard CMOS Inputs
Standard CMOS inputs are high impedance and are typically modeled as a resistor in parallel with the input
capacitance given in the Electrical Characteristics. The worst case resistance is calculated with the maximum
input voltage, given in the Recommended Operating Conditions, and the maximum input leakage current, given
in the Electrical Characteristics, using ohm's law (R = V ÷ I).
Signals applied to the inputs need to have fast edge rates, as defined by Δt/Δv in Recommended Operating
Conditions to avoid excessive currents and oscillations. If tolerance to a slow or noisy input signal is required, a
device with a Schmitt-trigger input should be utilized to condition the input signal prior to the standard CMOS
input.
8
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Feature Description (continued)
8.3.3 Clamp Diodes
The inputs and outputs to this device have negative clamping diodes.
CAUTION
Avoid any voltage below or above the input or output voltage specified in the Absolute
Maximum Ratings. In this event, the current must be limited to the maximum input or
output clamp current value indicated in the Absolute Maximum Ratings to avoid
damage to the device.
Device
VCC
Logic
Input
Output
-IIK
-IOK
GND
Figure 3. Electrical Placement of Clamping Diodes for Each Input and Output
8.3.4 Partial Power Down (Ioff)
The inputs and outputs for this device enter a high impedance state when the supply voltage is 0 V. The
maximum leakage into or out of any input or output pin on the device is specified by Ioff in the Electrical
Characteristics.
8.3.5 Over-voltage Tolerant Inputs
Input signals to this device can be driven above the supply voltage so long as they remain below the maximum
input voltage value specified in the Recommended Operating Conditions.
8.4 Function Table
Table 1 lists the functional modes of the SN74LVC1G86 device.
Table 1. Function Table
INPUTS
A
B
OUTPUT
Y
L
L
L
L
H
H
H
L
H
H
H
L
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9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
The SN74LVC1G86 device can accept input voltages up to 5.5 V at any valid VCC which makes the device
suitable for down translation. This feature of the SN74LVC1G86 makes it ideal for various bus interface
applications.
9.2 Typical Application
5-V accessory
3.3-V or 5-V regulated
0.1 µF
5-V
System
Logic
µC or
System
Logic
Figure 4. Typical Application Schematic
9.2.1 Design Requirements
This device uses CMOS technology and has balanced output drive. Take care to avoid bus contention because it
can drive currents that would exceed maximum limits. The high drive will also create fast edges into light loads,
so routing and load conditions should be considered to prevent ringing.
9.2.2 Detailed Design Procedure
1. Recommended Input Conditions
– For rise time and fall time specifications, see Δt/ΔV in the Recommended Operating Conditions table.
– For specified High and low levels, see VIH and VIL in the Recommended Operating Conditions table.
– Inputs are overvoltage tolerant allowing them to go as high as 5.5 V at any valid VCC.
2. Recommended Output Conditions
– Load currents should not exceed 32 mA per output and 50 mA total for the part.
– Outputs should not be pulled above VCC.
10
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Typical Application (continued)
9.2.3 Application Curve
100
90
80
70
ICC (mA)
60
VIH = 4.5V
VIL= 0V
VCC = 5.5V
Temp =25o C
50
40
Low->High
30
High->Low
20
10
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
VIN (V)
Figure 5. ICC vs. VIN
10 Power Supply Recommendations
The power supply can be any voltage between the minimum and maximum supply voltage rating located in the
Recommended Operating Conditions table.
Each VCC pin must have a good bypass capacitor to prevent power disturbance. For devices with a single supply,
0.1 µF is recommended. If there are multiple VCC pins, 0.01 µF or 0.022 µF is recommended for each power pin.
It is acceptable to parallel multiple bypass caps to reject different frequencies of noise. A 0.1-µF and 1-µF are
commonly used in parallel. The bypass capacitor must be installed as close to the power pin as possible for best
results.
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11 Layout
11.1 Layout Guidelines
Even low data rate digital signals can have high frequency signal components due to fast edge rates. When a
PCB trace turns a corner at a 90° angle, a reflection can occur. A reflection occurs primarily because of the
change of width of the trace. At the apex of the turn, the trace width increases to 1.414 times the width. This
increase upsets the transmission-line characteristics, especially the distributed capacitance and self–inductance
of the trace which results in the reflection. Not all PCB traces can be straight and therefore some traces must
turn corners. Figure 6 shows progressively better techniques of rounding corners. Only the last example (BEST)
maintains constant trace width and minimizes reflections.
11.2 Layout Example
BETTER
BEST
2W
WORST
1W min.
W
Figure 6. Trace Example
12
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SN74LVC1G86
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SCES222Q – APRIL 1999 – REVISED JUNE 2017
12 Device and Documentation Support
12.1 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
12.2 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
12.3 Trademarks
NanoFree, E2E are trademarks of Texas Instruments.
All other trademarks are the property of their respective owners.
12.4 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
12.5 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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Copyright © 1999–2017, Texas Instruments Incorporated
Product Folder Links: SN74LVC1G86
13
PACKAGE OPTION ADDENDUM
www.ti.com
14-Oct-2022
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
SN74LVC1G86DBVR
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU | SN
Level-1-260C-UNLIM
-40 to 125
(C865, C86F, C86J,
C86K, C86R)
Samples
SN74LVC1G86DBVRE4
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
C86F
Samples
SN74LVC1G86DBVRG4
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
C86F
Samples
SN74LVC1G86DBVT
ACTIVE
SOT-23
DBV
5
250
RoHS & Green
NIPDAU | SN
Level-1-260C-UNLIM
-40 to 125
(C865, C86F, C86J,
C86K, C86R)
Samples
SN74LVC1G86DCKR
ACTIVE
SC70
DCK
5
3000
RoHS & Green
NIPDAU | SN
Level-1-260C-UNLIM
-40 to 125
(CH5, CHF, CHJ, CH
K, CHR)
Samples
SN74LVC1G86DCKRE4
ACTIVE
SC70
DCK
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
CH5
Samples
SN74LVC1G86DCKRG4
ACTIVE
SC70
DCK
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
CH5
Samples
SN74LVC1G86DCKT
ACTIVE
SC70
DCK
5
250
RoHS & Green
NIPDAU | SN
Level-1-260C-UNLIM
-40 to 125
(CH5, CHF, CHJ, CH
K, CHR)
Samples
SN74LVC1G86DCKTG4
ACTIVE
SC70
DCK
5
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
CH5
Samples
SN74LVC1G86DRLR
ACTIVE
SOT-5X3
DRL
5
4000
RoHS & Green
NIPDAUAG
Level-1-260C-UNLIM
-40 to 125
(CH7, CHR)
Samples
SN74LVC1G86YZPR
ACTIVE
DSBGA
YZP
5
3000
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 85
(CH7, CHN)
Samples
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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