SN74LVC2G00WDCTREP

SN74LVC2G00W-EP DUAL 2-INPUT POSITIVE-NAND GATE www.ti.com SCES645 – SEPTEMBER 2005 FEATURES • • • • • • • • • (1) Controlled Baseline – One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of –55°C to 115°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product-Change Notification Qualification Pedigree (1) Supports 5-V VCC Operation Inputs Accept Voltages to 5.5 V Max tpd of 5.3 ns at 3.3 V Low Power Consumption, 10-µA Max ICC • • • • • • ±24-mA Output Drive at 3.3 V Typical VOLP (Output Ground Bounce) 2 V at VCC = 3.3 V, TA = 25°C Ioff Supports Partial-Power-Down Mode Operation Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 1000-V Charged-Device Model (C101) DCT PACKAGE (TOP VIEW) Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified performance and environmental limits. 1A 1B 2Y GND 1 8 2 7 3 6 4 5 VCC 1Y 2B 2A DESCRIPTION/ORDERING INFORMATION This dual 2-input positive-NAND gate is designed for 1.65-V to 5.5-V VCC operation. The SN74LVC2G00W-EP performs the Boolean function Y = A • B or Y = A + B in positive logic. This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs, preventing damaging current backflow through the device when it is powered down. ORDERING INFORMATION PACKAGE (1) TA –55°C to 115°C (1) (2) SSOP – DCT ORDERABLE PART NUMBER Reel of 3000 SN74LVC2G00WDCTREP TOP-SIDE MARKING (2) C00_ _ _ Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available at www.ti.com/sc/package. DCT: The actual top-side marking has three additional characters that designate the year, month, and assembly/test site. Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2005, Texas Instruments Incorporated SN74LVC2G00W-EP DUAL 2-INPUT POSITIVE-NAND GATE www.ti.com SCES645 – SEPTEMBER 2005 FUNCTION TABLE (EACH GATE) INPUTS OUTPUT Y A B H H L L X H X L H LOGIC DIAGRAM (POSITIVE LOGIC) 1A 1B 1 7 1Y 2 5 3 2A 2B 2Y 6 Absolute Maximum Ratings (1) over operating free-air temperature range (unless otherwise noted) VCC MIN MAX Supply voltage range –0.5 6.5 UNIT V range (2) VI Input voltage –0.5 6.5 V VO Voltage range applied to any output in the high-impedance or power-off state (2) –0.5 6.5 V VO Voltage range applied to any output in the high or low state (2) (3) –0.5 VCC + 0.5 V IIK Input clamp current VI < 0 –50 mA IOK Output clamp current VO < 0 –50 mA IO Continuous output current ±50 mA Continuous current through VCC or GND θJA Package thermal impedance (4) Tstg Storage temperature range (1) (2) (3) (4) 2 DCT package –65 ±100 mA 220 °C/W 150 °C Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The input negative-voltage and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed. The value of VCC is provided in the recommended operating conditions table. The package thermal impedance is calculated in accordance with JESD 51-7. SN74LVC2G00W-EP DUAL 2-INPUT POSITIVE-NAND GATE www.ti.com SCES645 – SEPTEMBER 2005 Recommended Operating Conditions VCC Supply voltage (1) Operating Data retention only VCC = 1.65 V to 1.95 V VIH High-level input voltage VCC = 2.3 V to 2.7 V VCC = 3 V to 3.6 V VCC = 4.5 V to 5.5 V MIN MAX 1.65 5.5 1.5 Low-level input voltage V 0.65 × VCC 1.7 V 2 0.7 × VCC 0.35 × VCC VCC = 1.65 V to 1.95 V VIL UNIT VCC = 2.3 V to 2.7 V 0.7 VCC = 3 V to 3.6 V 0.8 V 0.3 × VCC VCC = 4.5 V to 5.5 V VI Input voltage 0 5.5 V VO Output voltage 0 VCC V VCC = 1.65 V –4 VCC = 2.3 V IOH High-level output current –8 –16 VCC = 3 V VCC = 4.5 V –32 VCC = 1.65 V 4 VCC = 2.3 V IOL Low-level output current ∆t/∆v Input transition rise or fall rate 8 16 VCC = 3 V (1) Operating free-air temperature mA 24 VCC = 4.5 V 32 VCC = 1.8 V ± 0.15 V, 2.5 V ± 0.2 V 20 VCC = 3.3 V ± 0.3 V 10 VCC = 5 V ± 0.5 V TA mA –24 ns/V 5 –55 115 °C All unused inputs of the device must be held at VCC or GND to ensure proper device operation. Refer to the TI application report, Implications of Slow or Floating CMOS Inputs, literature number SCBA004. 3 SN74LVC2G00W-EP DUAL 2-INPUT POSITIVE-NAND GATE www.ti.com SCES645 – SEPTEMBER 2005 Electrical Characteristics over recommended operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS IOH = –100 µA VOH 1.65 V to 5.5 V 1.65 V 1.2 IOH = –8 mA 2.3 V 1.9 4.5 V IOL = 100 µA 1.65 V to 5.5 V 0.1 IOL = 4 mA 1.65 V 0.45 IOL = 8 mA 2.3 V 0.3 IOL = 32 mA A or B inputs 0.4 VI = 5.5 V or GND VI or VO = 5.5 V ICC VI = 5.5 V or GND, IO = 0 ∆ICC One input at VCC – 0.6 V, Other inputs at VCC or GND Ci VI = VCC or GND V 0.55 4.5 V Ioff (1) 3.8 3V IOL = 24 mA II 2.3 IOH = –32 mA IOL = 16 mA UNIT V 2.4 3V IOH = –24 mA MAX VCC – 0.1 IOH = –4 mA IOH = –16 mA VOL MIN TYP (1) VCC 0.57 0 to 5.5 V ±5 µA 0 ±10 µA 1.65 V to 5.5 V 10 µA 500 µA 3 V to 5.5 V 3.3 V 5 pF All typical values are at VCC = 3.3 V, TA = 25°C. Switching Characteristics over recommended operating free-air temperature range (unless otherwise noted) (see Figure 1) PARAMETER tpd FROM (INPUT) TO (OUTPUT) A or B Y VCC = 1.8 V ± 0.15 V VCC = 2.5 V ± 0.2 V VCC = 3.3 V ± 0.3 V VCC = 5 V ± 0.5 V MIN MAX MIN MAX MIN MAX MIN MAX 3.7 8.9 1.6 5.8 1.1 5.3 1 4.3 UNIT ns Operating Characteristics TA = 25°C PARAMETER Cpd 4 Power dissipation capacitance TEST CONDITIONS f = 10 MHz VCC = 1.8 V VCC = 2.5 V VCC = 3.3 V VCC = 5 V TYP TYP TYP TYP 19 19 20 22 UNIT pF SN74LVC2G00W-EP DUAL 2-INPUT POSITIVE-NAND GATE www.ti.com SCES645 – SEPTEMBER 2005 PARAMETER MEASUREMENT INFORMATION VLOAD S1 RL From Output Under Test CL (see Note A) Open GND RL TEST S1 tPLH/tPHL tPLZ/tPZL tPHZ/tPZH Open VLOAD GND LOAD CIRCUIT INPUTS VCC 1.8 V ± 0.15 V 2.5 V ± 0.2 V 3.3 V ± 0.3 V 5 V ± 0.5 V VI tr/tf VCC VCC 3V VCC ≤2 ns ≤2 ns ≤2.5 ns ≤2.5 ns VM VLOAD CL RL V∆ VCC/2 VCC/2 1.5 V VCC/2 2 × VCC 2 × VCC 6V 2 × VCC 30 pF 30 pF 50 pF 50 pF 1 kΩ 500 Ω 500 Ω 500 Ω 0.15 V 0.15 V 0.3 V 0.3 V VI Timing Input VM 0V tw tsu VI Input VM VM th VI Data Input VM VM 0V 0V VOLTAGE WAVEFORMS PULSE DURATION VOLTAGE WAVEFORMS SETUP AND HOLD TIMES VI VM Input VM 0V tPLH VM VM VOL tPHL VM VM 0V Output Waveform 1 S1 at VLOAD (see Note B) tPLH tPLZ VLOAD/2 VM tPZH VOH Output VM tPZL tPHL VOH Output VI Output Control VM VOL VOLTAGE WAVEFORMS PROPAGATION DELAY TIMES INVERTING AND NONINVERTING OUTPUTS Output Waveform 2 S1 at GND (see Note B) VOL + V∆ VOL tPHZ VM VOH − V∆ VOH ≈0 V VOLTAGE WAVEFORMS ENABLE AND DISABLE TIMES LOW- AND HIGH-LEVEL ENABLING NOTES: A. CL includes probe and jig capacitance. B. Waveform 1 is for an output with internal conditions such that the output is low, except when disabled by the output control. Waveform 2 is for an output with internal conditions such that the output is high, except when disabled by the output control. C. All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω. D. The outputs are measured one at a time, with one transition per measurement. E. tPLZ and tPHZ are the same as tdis. F. tPZL and tPZH are the same as ten. G. tPLH and tPHL are the same as tpd. H. All parameters and waveforms are not applicable to all devices. Figure 1. Load Circuit and Voltage Waveforms 5 PACKAGE OPTION ADDENDUM www.ti.com 10-Dec-2020 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) SN74LVC2G00WDCTREP ACTIVE SM8 DCT 8 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -55 to 115 COO Z V62/05623-01XE ACTIVE SM8 DCT 8 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -55 to 115 COO Z (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of