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SN74LVC2G14
SCES200O – APRIL 1999 – REVISED AUGUST 2015
SN74LVC2G14 Dual Schmitt-Trigger Inverter
1 Features
3 Description
•
•
•
•
•
•
•
This dual Schmitt-trigger inverter is designed for
1.65-V to 5.5-V VCC operation.
1
•
•
•
•
Available in the TI NanoFree™ Package
Supports 5-V VCC Operation
Inputs Accept Voltages to 5.5 V
Max tpd of 5.4 ns at 3.3 V
Low-Power Consumption, 10-μA Maximum ICC
±24-mA Output Drive at 3.3 V
Typical VOLP (Output Ground Bounce)
2 V at VCC = 3.3 V, TA = 25°C
Ioff Supports Live Insertion, Partial-Power-Down
Mode, and Back-Drive Protection
Support Translation Down
(5 V to 3.3 V; 3.3 V to 1.8 V)
Latch-Up Performance Exceeds 100 mA
Per JESD 78, Class II
2 Applications
•
•
•
•
•
•
•
Body Control Modules
Engine Control Modules
Arcade, Casino, and Gambling Machines
Servers and High-Performance Computing
EPOS, ECR, and Cash Drawer
Routers
Desktop PC
NanoFree™ package technology is a major
breakthrough in IC packaging concepts, using the die
as the package.
The SN74LVC2G14 device contains two inverters
and performs the Boolean function Y = A. The device
functions as two independent inverters, but because
of Schmitt action, it may have different input threshold
levels for positive-going (VT+) and negative-going
(VT–) signals.
This device is fully specified for partial-power-down
applications using Ioff. The Ioff circuitry disables the
outputs, preventing damaging current backflow
through the device when it is powered down.
Device Information(1)
PART NUMBER
PACKAGE
BODY SIZE (NOM)
SN74LVC2G14DBV
SOT-23 (6)
2.90 mm × 1.60 mm
SN74LVC2G14DCK
SC70 (6)
2.00 mm × 1.25 mm
SN74LVC2G14YZP
DSBGA (6)
1.41 mm × 0.91 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Block Diagram
1A
2A
1
6
3
4
1Y
2Y
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
SN74LVC2G14
SCES200O – APRIL 1999 – REVISED AUGUST 2015
www.ti.com
Table of Contents
1
2
3
4
5
6
7
8
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
6.1
6.2
6.3
6.4
6.5
6.6
6.7
6.8
6.9
4
4
4
5
5
6
6
6
6
Absolute Maximum Ratings .....................................
ESD Ratings ............................................................
Recommended Operating Conditions ......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Switching Characteristics, –40°C to 85°C ................
Switching Characteristics, –40°C to 125°C...............
Operating Characteristics..........................................
Typical Characteristics ..............................................
Parameter Measurement Information .................. 7
Detailed Description .............................................. 8
8.1
8.2
8.3
8.4
9
Overview ...................................................................
Functional Block Diagram .........................................
Feature Description...................................................
Device Functional Modes..........................................
8
8
8
8
Application and Implementation .......................... 9
9.1 Application Information.............................................. 9
9.2 Typical Application ................................................... 9
10 Power Supply Recommendations ..................... 10
11 Layout................................................................... 10
11.1 Layout Guidelines ................................................. 10
11.2 Layout Example .................................................... 11
12 Device and Documentation Support ................. 12
12.1
12.2
12.3
12.4
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
12
12
12
12
13 Mechanical, Packaging, and Orderable
Information ........................................................... 12
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision N (June 2015) to Revision O
•
Added TJ junction temperature spec to Abs Max Ratings...................................................................................................... 4
Changes from Revision M (November 2013) to Revision N
•
2
Page
Page
Added Applications, Device Information table, ESD Ratings table, Feature Description section, Device Functional
Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device
and Documentation Support section, and Mechanical, Packaging, and Orderable Information section .............................. 1
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SCES200O – APRIL 1999 – REVISED AUGUST 2015
5 Pin Configuration and Functions
DBV Package
6-Pin SOT-23
Top View
DCK Package
6-Pin SC70
Top View
1A
1
6
1Y
GND
2
5
VCC
2A
3
4
2Y
1A
1
6
1Y
GND
2
5
VCC
2A
3
4
2Y
YZP Package
6-Pin DSBGA
Bottom View
2Y
2A
3 4
GND
2 5
VCC
1A
1 6
1Y
See mechanical drawing for dimensions.
Pin Functions
PIN
NAME
NO.
I/O
DESCRIPTION
1A
1
I
Gate 1 logic signal
1Y
6
O
Gate 1 inverted signal
2A
3
I
Gate 2 logic signal
2Y
4
O
Gate 2 inverted signal
GND
2
—
Ground
VCC
5
—
Supply/Power Pin
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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
VCC
MIN
MAX
UNIT
Supply voltage
–0.5
6.5
V
(2)
VI
Input voltage
–0.5
6.5
V
VO
Voltage applied to any output in the high-impedance or power-off state (2)
–0.5
6.5
V
VO
Voltage applied to any output in the high or low state (2) (3)
–0.5
VCC + 0.5
V
IIK
Input clamp current
VI < 0
–50
mA
IOK
Output clamp current
VO < 0
–50
mA
IO
Continuous output current
±50
mA
±100
mA
TJ
Continuous current through VCC or GND
Junction temperature
–65
150
°C
Tstg
Storage temperature
–65
150
°C
(1)
(2)
(3)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The input negative-voltage and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
The value of VCC is provided in the Recommended Operating Conditions table.
6.2 ESD Ratings
VALUE
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001
V(ESD)
(1)
(2)
Electrostatic discharge
(1)
Charged-device model (CDM), per JEDEC specification JESD22C101 (2)
UNIT
±2000
V
±1000
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Manufacturing with
less than 500-V HBM is possible with the necessary precautions. Pins listed as ±XXX V may actually have higher performance.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Manufacturing with
less than 250-V CDM is possible with the necessary precautions. Pins listed as ±YYY V may actually have higher performance.
6.3 Recommended Operating Conditions
See
(1)
Operating
MIN
MAX
1.65
5.5
UNIT
VCC
Supply voltage
VI
Input voltage
0
5.5
V
VO
Output voltage
0
VCC
V
Data retention only
1.5
VCC = 1.65 V
–4
VCC = 2.3 V
IOH
High-level output current
–8
–16
VCC = 3 V
–32
VCC = 1.65 V
4
VCC = 2.3 V
Low-level output current
8
16
VCC = 3 V
(1)
4
Operating free-air temperature
mA
24
VCC = 4.5 V
TA
mA
–24
VCC = 4.5 V
IOL
V
32
–40
125
°C
All unused inputs of the device must be held at VCC or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, SCBA004.
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6.4 Thermal Information
SN74LVC2G14
THERMAL METRIC (1)
DBV (SOT23)
DCK (SC70)
YZP (DSBGA)
6 PINS
6 PINS
6 PINS
215
259
139
°C/W
RθJC(top) Junction-to-case (top) thermal resistance
55
87
18
°C/W
RθJB
57
89
N/A
°C/W
RθJA
(1)
Junction-to-ambient thermal resistance
Junction-to-board thermal resistance
UNIT
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
6.5 Electrical Characteristics
over recommended operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
VCC
VT+
Positive-going input
threshold voltage
VT–
Negative-going input
threshold voltage
ΔVT
Hysteresis
(VT+ – VT–)
VOH
VOL
II
A input
TYP (1)
–40°C to 125°C
MAX
MIN
TYP (1)
MAX
1.65 V
0.7
1.4
0.7
1.4
2.3 V
1
1.7
1
1.7
3V
1.3
2.2
1.3
2.2
4.5 V
1.9
3.1
1.9
3.1
5.5 V
2.2
3.7
2.2
3.7
1.65 V
0.3
0.7
0.3
0.7
2.3 V
0.4
1
0.4
1
3V
0.6
1.3
0.6
1.3
4.5 V
1.1
2
1.1
2
5.5 V
1.4
2.5
1.4
2.5
1.65 V
0.3
0.8
0.3
0.8
2.3 V
0.4
0.9
0.4
0.9
3V
0.4
1.1
0.4
1.1
4.5 V
0.6
1.3
0.6
1.3
0.7
1.4
0.7
1.4
5.5 V
IOH = –100 μA
–40°C to 85°C
MIN
1.65 V to 4.5 V
VCC – 0.1
VCC – 0.1
IOH = –4 mA
1.65 V
1.2
1.2
IOH = –8 mA
2.3 V
1.9
1.9
IOH = –16 mA
3V
2.4
2.4
IOH = –24 mA
3V
2.3
2.3
IOH = –32 mA
4.5 V
3.8
IOL = 100 μA
1.65 V to 4.5 V
0.1
0.1
IOL = 4 mA
1.65 V
0.45
0.45
IOL = 8 mA
2.3 V
0.3
0.3
IOL = 16 mA
3V
0.4
0.4
IOL = 24 mA
3V
0.55
0.55
IOL = 32 mA
4.5 V
0.55
0.55
VI = 5.5 V or GND
Ioff
VI or VO = 5.5 V
ICC
VI = 5.5 V or GND,
ΔICC
One input at VCC – 0.6 V,
Other inputs at VCC or GND
CI
VI = VCC or GND
(1)
All typical values are at VCC = 3.3 V, TA = 25°C.
IO = 0
UNIT
V
V
V
V
3.8
V
0 to 5.5 V
±5
±5
μA
0
±10
±10
μA
1.65 V to 5.5 V
10
10
μA
3 V to 5.5 V
500
500
μA
3.3 V
4
pF
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6.6 Switching Characteristics, –40°C to 85°C
over recommended operating free-air temperature range (unless otherwise noted) (see Figure 3)
PARAMETER
tpd
FROM
(INPUT)
TO
(OUTPUT)
A
Y
VCC = 1.8 V
± 0.15 V
VCC = 2.5 V
± 0.2 V
VCC = 3.3 V
± 0.3 V
VCC = 5 V
± 0.5 V
UNIT
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX
3.9
9.5
1.9
5.7
2
5.4
1.5
4.3
ns
6.7 Switching Characteristics, –40°C to 125°C
over recommended operating free-air temperature range (unless otherwise noted) (see Figure 3)
PARAMETER
tpd
FROM
(INPUT)
TO
(OUTPUT)
A
Y
VCC = 1.8 V
± 0.15 V
VCC = 2.5 V
± 0.2 V
VCC = 3.3 V
± 0.3 V
VCC = 5 V
± 0.5 V
UNIT
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX
3.9
10.5
1.9
6.5
2
6
1.5
4.7
ns
6.8 Operating Characteristics
TA = 25°C
PARAMETER
Cpd
Power dissipation capacitance
TEST CONDITIONS
VCC = 1.8 V
f = 10 MHz
VCC = 2.5 V
VCC = 3.3 V
VCC = 5 V
TYP
TYP
TYP
TYP
16
17
18
21
UNIT
pF
6.9 Typical Characteristics
8
TPD
7
TPD (ns)
TPD (ns)
6
5
4
3
2
1
0
0
1
2
3
VCC (V)
4
5
6
D002
Temperature (°C)
Figure 1. TPD Across Temperature at 3.3 V VCC
6
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Figure 2. TPD Across VCC at 25°C
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7 Parameter Measurement Information
VLOAD
S1
RL
From Output
Under Test
Open
TEST
GND
CL
(see Note A)
S1
Open
VLOAD
tPLH/tPHL
tPLZ/tPZL
tPHZ/tPZH
RL
GND
LOAD CIRCUIT
INPUTS
VCC
1.8 V ± 0.15 V
2.5 V ± 0.2 V
3.3 V ± 0.3 V
5 V ± 0.5 V
VI
tr/tf
VCC
VCC
3V
VCC
£2 ns
£2 ns
£2.5 ns
£2.5 ns
VM
VLOAD
CL
RL
VD
VCC/2
VCC/2
1.5 V
VCC/2
2 × VCC
2 × VCC
6V
2 × VCC
30 pF
30 pF
50 pF
50 pF
1 kW
500 W
500 W
500 W
0.15 V
0.15 V
0.3 V
0.3 V
VI
Timing Input
VM
0V
tW
tsu
VI
Input
VM
VM
th
VI
Data Input
VM
VM
0V
0V
VOLTAGE WAVEFORMS
PULSE DURATION
VOLTAGE WAVEFORMS
SETUP AND HOLD TIMES
VI
VM
Input
VM
0V
tPLH
VOH
Output
VM
VOL
tPHL
VM
VM
0V
tPLZ
Output
Waveform 1
S1 at VLOAD
(see Note B)
tPLH
VLOAD/2
VM
tPZH
VOH
Output
VM
tPZL
tPHL
VM
VI
Output
Control
VM
VOL
VOLTAGE WAVEFORMS
PROPAGATION DELAY TIMES
INVERTING AND NONINVERTING OUTPUTS
Output
Waveform 2
S1 at GND
(see Note B)
VOL + VD
VOL
tPHZ
VM
VOH – VD
VOH
»0 V
VOLTAGE WAVEFORMS
ENABLE AND DISABLE TIMES
LOW- AND HIGH-LEVEL ENABLING
NOTES: A. CL includes probe and jig capacitance.
B. Waveform 1 is for an output with internal conditions such that the output is low, except when disabled by the output control.
Waveform 2 is for an output with internal conditions such that the output is high, except when disabled by the output control.
C. All input pulses are supplied by generators having the following characteristics: PRR £ 10 MHz, ZO = 50 W.
D. The outputs are measured one at a time, with one transition per measurement.
E. tPLZ and tPHZ are the same as tdis.
F. tPZL and tPZH are the same as ten.
G. tPLH and tPHL are the same as tpd.
H. All parameters and waveforms are not applicable to all devices.
Figure 3. Load Circuit and Voltage Waveforms
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8 Detailed Description
8.1 Overview
The SN74LVC2G14 device contains two Schmitt Trigger Inverter and performs the Boolean function Y = A. The
device functions as an independent inverter, but because of Schmitt Trigger action, it will have different input
threshold levels for a positive-going (Vt+) and negative-going (Vt-) signals.
This device is fully specified for partial-power-down applications using Ioff. The Ioff circuit disables the output,
preventing damaging current back-flow through the device when it is powered down.
8.2 Functional Block Diagram
1A
2A
1
6
3
4
1Y
2Y
8.3 Feature Description
8.3.1 Support Translation Down (5 V to 3.3 V; 3.3 V to 1.8 V)
As the inputs are 5.5-V tolerant, the device can be used as a down translator. When the input voltage exceeds
VT+ (Max), the output will follow VCC, performing down-translation if the input voltage exceeds VCC.
8.4 Device Functional Modes
Table 1 lists the functional modes of the SN74LVC2G14.
Table 1. Functional Table
(Each Inverter)
INPUT
A
8
OUTPUT
Y
H
L
L
H
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9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
The SN74LVC2G14 device is a high-drive CMOS device that can be used for a multitude of buffer type functions
where the input is slow or noisy. The device can produce 24 mA of drive current at 3.3 V, making it Ideal for
driving multiple outputs and good for high-speed applications up to 100 MHz. The inputs are 5.5-V tolerant
allowing it to translate down to VCC.
9.2 Typical Application
~2.2M
SN74LVC2G14
(one channel)
50 pF
16 pF
~32 pF
~32pF
Figure 4. Typical Application Schematic
9.2.1 Design Requirements
This device uses CMOS technology and has balanced output drive. Care should be taken to avoid bus
contention because it can drive currents that would exceed maximum limits. The high drive will also create fast
edges into light loads so routing and load conditions should be considered to prevent ringing.
9.2.2 Detailed Design Procedure
1. Recommended Input Conditions
– Rise time and fall time specs. See (Δt/ΔV) in the Recommended Operating Conditions table.
– Specified high and low levels. See (VIH and VIL) in the Recommended Operating Conditions table.
– Inputs are overvoltage tolerant allowing them to go as high as (VI max) in the Recommended Operating
Conditions table at any valid VCC .
2. Recommend Output Conditions
– Load currents should not exceed (IO max) per output and should not exceed (continuous current through
VCC or GND) total current for the part. These limits are located in the Absolute Maximum Ratings table.
– Outputs should not be pulled above VCC.
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Typical Application (continued)
9.2.3 Application Curve
10
Icc
Icc
Icc
Icc
9
8
1.8V
2.5V
3.3V
5V
Icc - mA
7
6
5
4
3
2
1
0
0
20
40
Frequency - MHz
60
80
D003
Figure 5. ICC vs Frequency
10 Power Supply Recommendations
The power supply can be any voltage between the minimum and maximum supply voltage rating located in the
table. Each VCC pin should have a good bypass capacitor to prevent power disturbance. For devices with a
single supply, TI recommends a 0.1-μF capacitor. If there are multiple VCC pins, then TI recommends a 0.01-μF
or 0.022-μF capacitor for each power pin. It is ok to parallel multiple bypass capacitors to reject different
frequencies of noise. 0.1-μF and 1-μF capacitors are commonly used in parallel. The bypass capacitor should be
installed as close to the power pin as possible for best results.
11 Layout
11.1 Layout Guidelines
When using multiple bit logic devices inputs should not ever float. In many cases, functions or parts of functions
of digital logic devices are unused, for example, when only two inputs of a triple-input AND gate are used or only
3 of the 4 buffer gates are used. Such input terminals should not be left unconnected because the undefined
voltages at the outside connections result in undefined operational states. The following rules must be observed
under all circumstances:
• All unused inputs of digital logic devices must be connected to a high or low bias to prevent them from
floating.
• The logic level that should be applied to any particular unused input depends on the function of the device.
Generally they will be tied to GND or VCC whichever make more sense or is more convenient.
10
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11.2 Layout Example
VDD
Keep signal traces as short as
possible
1A 1
6
GND 2
SN74LVC2G14 5
2A 3
4
0.1µF
1Y
VCC
2Y
Unused inputs connected to
GND or VCC to prevent
floating
Figure 6. Layout Schematic
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www.ti.com
12 Device and Documentation Support
12.1 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
12.2 Trademarks
NanoFree, E2E are trademarks of Texas Instruments.
All other trademarks are the property of their respective owners.
12.3 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
12.4 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical packaging and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser based versions of this data sheet, refer to the left hand navigation.
12
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PACKAGE OPTION ADDENDUM
www.ti.com
4-Apr-2019
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
SN74LVC2G14DBVR
ACTIVE
SOT-23
DBV
6
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU | CU SN
Level-1-260C-UNLIM
-40 to 125
(C145, C14F, C14K,
C14R)
SN74LVC2G14DBVRE4
ACTIVE
SOT-23
DBV
6
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
(C14F, C14R)
SN74LVC2G14DBVRG4
ACTIVE
SOT-23
DBV
6
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
(C14F, C14R)
SN74LVC2G14DBVT
ACTIVE
SOT-23
DBV
6
250
Green (RoHS
& no Sb/Br)
CU NIPDAU | CU SN
Level-1-260C-UNLIM
-40 to 125
(C145, C14F, C14K,
C14R)
SN74LVC2G14DBVTG4
ACTIVE
SOT-23
DBV
6
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
(C14F, C14R)
SN74LVC2G14DCK3
ACTIVE
SC70
DCK
6
3000
Pb-Free
(RoHS)
CU SNBI
Level-1-260C-UNLIM
-40 to 125
(CFF, CFZ)
SN74LVC2G14DCKR
ACTIVE
SC70
DCK
6
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU | CU SN
Level-1-260C-UNLIM
-40 to 125
(CF5, CFF, CFJ, CF
K, CFR)
SN74LVC2G14DCKRE4
ACTIVE
SC70
DCK
6
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
CF5
SN74LVC2G14DCKRG4
ACTIVE
SC70
DCK
6
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
CF5
SN74LVC2G14DCKT
ACTIVE
SC70
DCK
6
250
Green (RoHS
& no Sb/Br)
CU NIPDAU | CU SN
Level-1-260C-UNLIM
-40 to 125
(CF5, CFF, CFJ, CF
K, CFR)
SN74LVC2G14DCKTG4
ACTIVE
SC70
DCK
6
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
CF5
SN74LVC2G14YZPR
ACTIVE
DSBGA
YZP
6
3000
Green (RoHS
& no Sb/Br)
SNAGCU
Level-1-260C-UNLIM
-40 to 125
(CF7, CFN)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
4-Apr-2019
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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