Product
Folder
Order
Now
Technical
Documents
Support &
Community
Tools &
Software
SN74LVC2G241
SCES210P – APRIL 1999 – REVISED JANUARY 2019
SN74LVC2G241 Dual Buffer and Driver With 3-State Outputs
1 Features
3 Description
•
This dual buffer and line driver is designed for 1.65-V
to 5.5-V VCC operation.
1
•
•
•
•
•
•
•
•
•
•
•
Available in the Texas Instruments
NanoFree™ Package
Supports 5-V VCC Operation
Inputs Accept Voltages to 5.5 V
Max tpd of 4.1 ns at 3.3 V
Low Power Consumption, 10-µA Maximum ICC
±24-mA Output Drive at 3.3 V
Typical VOLP (Output Ground Bounce)
2 V at VCC = 3.3 V, TA = 25°C
Ioff Supports Live Insertion, Partial-Power-Down
Mode, and Back-Drive Protection
Can Be Used as a Down Translator to Translate
Inputs From a Max of 5.5 V Down
to the VCC Level
Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
ESD Protection Exceeds JESD 22
– 2000-V Human-Body Model (A114-A)
– 200-V Machine Model (A115-A)
– 1000-V Charged-Device Model (C101)
The SN74LVC2G241 device is designed specifically
to improve both the performance and density of 3state memory-address drivers, clock drivers, and busoriented receivers and transmitters.
NanoFree package technology is a major
breakthrough in IC packaging concepts, using the die
as the package.
The SN74LVC2G241 device is organized as two 1-bit
line drivers with separate output-enable (1OE, 2OE)
inputs. When 1OE is low and 2OE is high, the device
passes data from the A inputs to the Y outputs. When
1OE is high and 2OE is low, the outputs are in the
high-impedance state.
To ensure the high-impedance state during power up
or power down, OE should be tied to VCC through a
pullup resistor, and OE should be tied to GND
through a pulldown resistor; the minimum value of the
resistor is determined by the current-sinking or the
current-sourcing capability of the driver.
This device is fully specified for partial-power-down
applications using Ioff. The Ioff circuitry disables the
outputs, preventing damaging current backflow
through the device when it is powered down.
2 Applications
•
•
•
•
•
•
•
•
•
•
•
•
AV Receivers
Blu-ray Players and Home Theaters
DVD Recorders and Players
Desktop or Notebook PCs
Digital Radio or Internet Radio Players
Digital Video Cameras (DVC)
Embedded PCs
GPS: Personal Navigation Devices
Mobile Internet Devices
Network Projector Front-Ends
Portable Media Players
Pro Audio Mixers
Device Information(1)
PART NUMBER
PACKAGE
SN74LVC2G241DCT
SM8 (8)
BODY SIZE (NOM)
2.95 mm × 2.80 mm
SN74LVC2G241DCU VSOOP (8)
2.30 mm × 2.00 mm
SN74LVC2G241YZP
1.91 mm × 0.91 mm
DSBGA (8)
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Logic Diagram (Positive Logic)
1OE
1A
2OE
2A
1
2
6
1Y
7
5
3
2Y
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
SN74LVC2G241
SCES210P – APRIL 1999 – REVISED JANUARY 2019
www.ti.com
Table of Contents
1
2
3
4
5
6
7
8
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
6.1
6.2
6.3
6.4
6.5
6.6
6.7
6.8
4
4
4
5
5
6
6
6
Absolute Maximum Ratings .....................................
ESD Ratings..............................................................
Recommended Operating Conditions ......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Switching Characteristics ..........................................
Operating Characteristics..........................................
Typical Characteristic................................................
Parameter Measurement Information .................. 7
Detailed Description .............................................. 8
8.1 Overview ................................................................... 8
8.2 Functional Block Diagram ......................................... 8
8.3 Feature Description................................................... 8
8.4 Device Functional Modes.......................................... 8
9
Application and Implementation .......................... 9
9.1 Application Information.............................................. 9
9.2 Typical Application ................................................... 9
10 Power Supply Recommendations ..................... 10
11 Layout................................................................... 10
11.1 Layout Guidelines ................................................. 10
11.2 Layout Example .................................................... 10
12 Device and Documentation Support ................. 11
12.1
12.2
12.3
12.4
12.5
Documentation Support ........................................
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
11
11
11
11
11
13 Mechanical, Packaging, and Orderable
Information ........................................................... 11
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision O (December 2015) to Revision P
Page
•
Changed Electrical Characteristics table format ................................................................................................................... 5
•
Changed Switching Characteristics tables format. ................................................................................................................ 6
Changes from Revision N (November 2013) to Revision O
•
Page
Added Applications section, Device Information table, ESD Ratings table, Thermal Information table, Typical
Characteristics, Feature Description section, Device Functional Modes, Application and Implementation section,
Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section. ................................................................................................. 1
Changes from Revision M (February 2007) to Revision N
Page
•
Updated document to new TI data sheet format. ................................................................................................................... 1
•
Removed Ordering Information table. .................................................................................................................................... 1
•
Updated Features. .................................................................................................................................................................. 1
•
Updated operating temperature range. .................................................................................................................................. 4
2
Submit Documentation Feedback
Copyright © 1999–2019, Texas Instruments Incorporated
Product Folder Links: SN74LVC2G241
SN74LVC2G241
www.ti.com
SCES210P – APRIL 1999 – REVISED JANUARY 2019
5 Pin Configuration and Functions
DCT Package
8-Pin SM8
Top View
1OE
1
DCU Package
8-Pin VSSOP
Top View
VCC
8
1A
2
7
2OE
2Y
3
6
1Y
GND
4
5
2A
1OE
1A
2Y
GND
1
8
VCC
2
7
2OE
1Y
2A
3
6
4
5
YZP Package
8-Pin DSBGA
Bottom View
GND
2Y
1A
1OE
4 5
3 6
2 7
1 8
2A
1Y
2OE
VCC
Pin Functions (1) (2)
PIN
NAME
NO.
1A
2
1OE
1Y
I/O
DESCRIPTION
I
Input
1
I
Output enable (Active low)
6
O
Output
2A
5
I
Input
2Y
3
O
Output
2OE
7
I
Output enable (Active high)
GND
4
—
Ground
VCC
8
—
Power pin
(1)
(2)
N.C. – No internal connection
See for dimensions
Submit Documentation Feedback
Copyright © 1999–2019, Texas Instruments Incorporated
Product Folder Links: SN74LVC2G241
3
SN74LVC2G241
SCES210P – APRIL 1999 – REVISED JANUARY 2019
www.ti.com
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
VCC
MIN
MAX
UNIT
Supply voltage
–0.5
6.5
V
(2)
VI
Input voltage
–0.5
6.5
V
VO
Voltage applied to any output in the high-impedance or power-off state (2)
–0.5
6.5
V
VO
Voltage applied to any output in the high or low state (2) (3)
–0.5
VCC + 0.5
V
IIK
Input clamp current
VI < 0
–50
mA
IOK
Output clamp current
VO < 0
–50
mA
IO
Continuous output current
±50
mA
Continuous current through VCC or GND
±100
mA
TJ
Maximum junction temperature
150
°C
Tstg
Storage temperature
150
°C
(1)
(2)
(3)
–65
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The input negative-voltage and output voltage ratings may be exceeded if the input and output current ratings are observed.
The value of VCC is provided in the Recommended Operating Conditions table.
6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic
discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins
(1)
UNIT
±2000
Charged-device model (CDM), per JEDEC specification JESD22-C101, all
pins (2)
V
±1000
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions (1)
VCC
Supply voltage
Operating
Data retention only
VCC = 1.65 V to 1.95 V
VIH
High-level input voltage
VCC = 2.3 V to 2.7 V
VCC = 3 V to 3.6 V
VCC = 4.5 V to 5.5 V
MIN
MAX
1.65
5.5
1.5
Low-level input voltage
VI
Input voltage
1.7
Output voltage
0.7 × VCC
0.35 × VCC
VCC = 2.3 V to 2.7 V
0.7
VCC = 3 V to 3.6 V
0.8
5.5
High or low state
0
VCC
3-state
0
5.5
VCC = 2.3 V
High-level output current
VCC = 3 V
VCC = 4.5 V
(1)
4
V
0.3 × VCC
0
VCC = 1.65 V
IOH
V
2
VCC = 4.5 V to 5.5 V
VO
V
0.65 × VCC
VCC = 1.65 V to 1.95 V
VIL
UNIT
V
V
–4
–8
–16
mA
–24
–32
All unused inputs of the device must be held at VCC or GND to ensure proper device operation. Refer to the TI application report
Implications of Slow or Floating CMOS Inputs, SCBA004.
Submit Documentation Feedback
Copyright © 1999–2019, Texas Instruments Incorporated
Product Folder Links: SN74LVC2G241
SN74LVC2G241
www.ti.com
SCES210P – APRIL 1999 – REVISED JANUARY 2019
Recommended Operating Conditions(1) (continued)
MIN
IOL
Low-level output current
MAX
VCC = 1.65 V
4
VCC = 2.3 V
8
16
VCC = 3 V
Δt/Δv Input transition rise or fall rate
mA
24
VCC = 4.5 V
32
VCC = 1.8 V ± 0.15 V, 2.5 V ± 0.2 V
20
VCC = 3.3 V ± 0.3 V
10
VCC = 5 V ± 0.5 V
TA
UNIT
ns/V
5
Operating free-air temperature
–40
85
°C
6.4 Thermal Information
SN74LVC2G241
THERMAL METRIC (1)
RθJA
(1)
Junction-to-ambient thermal resistance
DCT
(SM8)
DCU
(VSSOP)
YZP
(DSBGA)
8 PINS
8 PINS
8 PINS
220
227
102
UNIT
°C/W
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
6.5 Electrical Characteristics
over recommended operating free-air temperature range, TA = –40ºC to 125°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
VCC
MIN
IOH = –100 µA
VOH
1.65 V to 5.5 V
MIN
VCC – 0.1
VCC – 0.1
1.2
1.2
IOH = –8 mA
2.3 V
1.9
1.9
2.4
2.4
2.3
2.3
3V
UNIT
MAX
V
4.5 V
IOL = 100 µA
1.65 V to 5.5 V
0.1
0.1
IOL = 4 mA
1.65 V
0.45
0.45
IOL = 8 mA
2.3 V
0.3
0.3
0.4
0.4
0.55
0.55
0.55
0.75
0 to 5.5 V
±5
±5
µA
IOL = 16 mA
3.8
TYP
IOH = –32 mA
3.8
3V
IOL = 24 mA
IOL = 32 mA
II
MAX
1.65 V
IOH = –24 mA
A or OE
inputs
TYP
IOH = –4 mA
IOH = –16 mA
VOL
–40°C to 125°C
(Recommended)
–40°C to 85°C
4.5 V
VI = 5.5 V or GND
V
Ioff
VI or VO = 5.5 V
0
±10
±10
µA
IOZ
VO = 0 to 5.5 V
3.6 V
10
10
µA
ICC
VI = 5.5 V or GND,
1.65 V to 5.5 V
10
10
µA
ΔICC
One input at VCC – 0.6 V,
Other inputs at VCC or GND
3 V to 5.5 V
500
500
µA
Ci
Co
Data Inputs
Control Inputs
IO = 0
VI = VCC or GND
3.3 V
VO = VCC or GND
3.3 V
3.5
pF
4
6.5
pF
Submit Documentation Feedback
Copyright © 1999–2019, Texas Instruments Incorporated
Product Folder Links: SN74LVC2G241
5
SN74LVC2G241
SCES210P – APRIL 1999 – REVISED JANUARY 2019
www.ti.com
6.6 Switching Characteristics
over recommended operating free-air temperature range (unless otherwise noted) (see Figure 2)
–40°C to 85°C
PARAMETER
FROM
(INPUT)
TO
(OUTPUT)
VCC = 1.8 V
± 0.15 V
VCC = 2.5 V
± 0.2 V
VCC = 3.3 V
± 0.3 V
VCC = 5 V
± 0.5 V
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX
tpd
A
Y
3.3
9.1
1.5
5.5
1.4
4.3
1.0
4.0
ns
ten
OE
Y
4.0
9.9
1.3
6.6
1.2
4.7
1.1
5.0
ns
tdis
OE
Y
1.5
11.6
1.0
5.7
1.4
4.6
0.5
4.2
ns
PARAMETER
FROM
(INPUT)
TO
(OUTPUT)
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX
tpd
A
Y
3.3
10.1
1.5
5.6
1.4
5.3
1.0
4.2
ns
ten
OE
Y
4.0
10.9
1.3
6.6
1.2
5.7
1.2
4.3
ns
tdis
OE
Y
1.5
12.6
1.0
6.6
1.4
5.6
1.0
3.9
ns
UNIT
–40°C to 125°C (Recommended)
VCC = 1.8 V
± 0.15 V
VCC = 2.5 V
± 0.2 V
VCC = 3.3 V
± 0.3 V
VCC = 5 V
± 0.5 V
UNIT
6.7 Operating Characteristics
TA = 25°C
PARAMETER
TEST CONDITIONS
VCC
Outputs enabled
Cpd
Power dissipation
capacitance
per buffer/driver
f = 10 MHz
Outputs disabled
TYP
VCC = 1.8 V
19
VCC = 2.5 V
19
VCC = 3.3 V
20
VCC = 5 V
22
VCC = 1.8 V
2
VCC = 2.5 V
2
VCC = 3.3 V
2
VCC = 5 V
3
UNIT
pF
pF
6.8 Typical Characteristic
3.5
3
Propagation Delay (tPD)
2.5
2
1.5
1
0.5
Typ. Char.
0
0
1
2
3
4
5
6
Supply Voltage [VCC] (V)
C001
Figure 1. tpd vs Vcc Over Full Temperature Range
6
Submit Documentation Feedback
Copyright © 1999–2019, Texas Instruments Incorporated
Product Folder Links: SN74LVC2G241
SN74LVC2G241
www.ti.com
SCES210P – APRIL 1999 – REVISED JANUARY 2019
7 Parameter Measurement Information
VLOAD
S1
RL
From Output
Under Test
Open
TEST
GND
CL
(see Note A)
S1
Open
VLOAD
tPLH/tPHL
tPLZ/tPZL
tPHZ/tPZH
RL
GND
LOAD CIRCUIT
INPUTS
VCC
1.8 V ± 0.15 V
2.5 V ± 0.2 V
3.3 V ± 0.3 V
5 V ± 0.5 V
VI
tr/tf
VCC
VCC
3V
VCC
£2 ns
£2 ns
£2.5 ns
£2.5 ns
VM
VLOAD
CL
RL
VD
VCC/2
VCC/2
1.5 V
VCC/2
2 × VCC
2 × VCC
6V
2 × VCC
30 pF
30 pF
50 pF
50 pF
1 kW
500 W
500 W
500 W
0.15 V
0.15 V
0.3 V
0.3 V
VI
Timing Input
VM
0V
tW
tsu
VI
Input
VM
VM
th
VI
Data Input
VM
VM
0V
0V
VOLTAGE WAVEFORMS
PULSE DURATION
VOLTAGE WAVEFORMS
SETUP AND HOLD TIMES
VI
VM
Input
VM
0V
tPLH
VOH
VM
VOL
tPHL
VM
VM
0V
tPLZ
Output
Waveform 1
S1 at VLOAD
(see Note B)
tPLH
VLOAD/2
VM
tPZH
VOH
Output
VM
tPZL
tPHL
VM
Output
VI
Output
Control
VM
VOL
VOLTAGE WAVEFORMS
PROPAGATION DELAY TIMES
INVERTING AND NONINVERTING OUTPUTS
Output
Waveform 2
S1 at GND
(see Note B)
VOL + VD
VOL
tPHZ
VM
VOH – VD
VOH
»0 V
VOLTAGE WAVEFORMS
ENABLE AND DISABLE TIMES
LOW- AND HIGH-LEVEL ENABLING
NOTES: A. CL includes probe and jig capacitance.
B. Waveform 1 is for an output with internal conditions such that the output is low, except when disabled by the output control.
Waveform 2 is for an output with internal conditions such that the output is high, except when disabled by the output control.
C. All input pulses are supplied by generators having the following characteristics: PRR £ 10 MHz, ZO = 50 W.
D. The outputs are measured one at a time, with one transition per measurement.
E. tPLZ and tPHZ are the same as tdis.
F. tPZL and tPZH are the same as ten.
G. tPLH and tPHL are the same as tpd.
H. All parameters and waveforms are not applicable to all devices.
Figure 2. Load Circuit and Voltage Waveforms
Submit Documentation Feedback
Copyright © 1999–2019, Texas Instruments Incorporated
Product Folder Links: SN74LVC2G241
7
SN74LVC2G241
SCES210P – APRIL 1999 – REVISED JANUARY 2019
www.ti.com
8 Detailed Description
8.1 Overview
The SN74LVC2G241 device is designed specifically to improve both the performance and density of 3-state
memory-address drivers, clock drivers, and bus-oriented receivers and transmitters. The SN74LVC2G241 device
is organized as two 1-bit line drivers with separate output-enable (1OE, 2OE) inputs. When 1OE is low and 2OE
is high, the device passes data from the A inputs to the Y outputs. When 1OE is high and 2OE is low, the
outputs are in the high-impedance state.
The SN74LVC2G241 is also an effective redriver, with a maximum output current drive of 32 mA.
8.2 Functional Block Diagram
1
1OE
2
1A
6
1Y
7
2OE
5
2A
3
2Y
Figure 3. Logic Diagram (Positive Logic)
8.3 Feature Description
To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup
resistor, and OE should be tied to GND through a pulldown resistor; the minimum value of the resistor is
determined by the current-sinking or the current-sourcing capability of the driver.
This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs,
preventing damaging current backflow through the device when it is powered down.
8.4 Device Functional Modes
Table 1 and Table 2 list the functional modes of the SN74LVC2G241.
Table 1. Gate 1 Functional Table
INPUTS
1OE
1A
OUTPUT
1Y
L
H
H
L
L
L
H
X
Z
Table 2. Gate 2 Functional Table
INPUTS
8
2OE
2A
OUTPUT
2Y
H
H
H
H
L
L
L
X
Z
Submit Documentation Feedback
Copyright © 1999–2019, Texas Instruments Incorporated
Product Folder Links: SN74LVC2G241
SN74LVC2G241
www.ti.com
SCES210P – APRIL 1999 – REVISED JANUARY 2019
9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
Typical Application shows a simple application where a physical push button is connected to the
SN74LVC2G241. The push button is in a physical location far enough away from the processor that the input
signal is weak and needs to be redriven. The SN74LVC2G241 acts as a redriver, providing a strong input signal
to the processor with as little as 1 ns of propagation delay.
9.2 Typical Application
VCC
Physical Push
Button
Microprocessor
SN74LVC2G241
(One driver)
Figure 4. SN74LVC2G241 Application
9.2.1 Design Requirements
This device uses CMOS technology and has balanced output drive. Take care to avoid bus contention because it
can drive currents that would exceed maximum limits. The high drive also creates fast edges into light loads, so
routing and load conditions must be considered to prevent ringing.
9.2.2 Detailed Design Procedure
1. Recommended Input Conditions
– Rise time and fall time specs. See (Δt/ΔV) in Recommended Operating Conditions.
– Specified high and low levels. See (VIH and VIL) in Recommended Operating Conditions.
– Inputs are overvoltage tolerant allowing them to go as high as (VI max) in Recommended Operating
Conditions at any valid VCC.
2. Recommend Output Conditions
– Load currents must not exceed (IO max) per output and must not exceed (Continuous current through VCC
or GND) total current for the part. These limits are located in Absolute Maximum Ratings.
– Outputs must not be pulled above VCC during normal operation or 5.5 V in high-z state.
Submit Documentation Feedback
Copyright © 1999–2019, Texas Instruments Incorporated
Product Folder Links: SN74LVC2G241
9
SN74LVC2G241
SCES210P – APRIL 1999 – REVISED JANUARY 2019
www.ti.com
Typical Application (continued)
9.2.3 Application Curve
1600
Icc
Icc
Icc
Icc
1400
1200
1.8V
2.5V
3.3V
5V
Icc - µA
1000
800
600
400
200
0
0
20
40
Frequency - MHz
60
80
D001
Figure 5. ICC vs Frequency
10 Power Supply Recommendations
The power supply can be any voltage between the minimum and maximum supply voltage rating located in
Recommended Operating Conditions.
Each VCC pin should have a good bypass capacitor to prevent power disturbance. For devices with a single
supply, a 0.1-μF capacitor is recommended and if there are multiple VCC pins then a 0.01-μF or 0.022-μF
capacitor is recommended for each power pin. It is ok to parallel multiple bypass capacitors to reject different
frequencies of noise. 0.1-μF and 1-μF capacitors are commonly used in parallel. The bypass capacitor should be
installed as close to the power pin as possible for best results.
11 Layout
11.1 Layout Guidelines
When using multiple bit logic devices inputs must not ever float. In many cases, functions or parts of functions of
digital logic devices are unused; for example, when only two inputs of a triple-input AND gate are used or only 3
of the 4 buffer gates are used. Such input pins must not be left unconnected because the undefined voltages at
the outside connections result in undefined operational states. Specified below are the rules that must be
observed under all circumstances. All unused inputs of digital logic devices must be connected to a high or low
bias to prevent them from floating. The logic level that should be applied to any particular unused input depends
on the function of the device. Generally they will be tied to GND or VCC, whichever make more sense or is more
convenient.
11.2 Layout Example
VCC
Unused Input
Input
Output
Unused Input
Output
Input
Figure 6. Layout Diagram
10
Submit Documentation Feedback
Copyright © 1999–2019, Texas Instruments Incorporated
Product Folder Links: SN74LVC2G241
SN74LVC2G241
www.ti.com
SCES210P – APRIL 1999 – REVISED JANUARY 2019
12 Device and Documentation Support
12.1 Documentation Support
12.1.1 Related Documentation
For related documentation, see the following:
Implications of Slow or Floating CMOS Inputs, SCBA004
12.2 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
12.3 Trademarks
NanoFree, E2E are trademarks of Texas Instruments.
All other trademarks are the property of their respective owners.
12.4 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
12.5 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical packaging and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser based versions of this data sheet, refer to the left hand navigation.
Submit Documentation Feedback
Copyright © 1999–2019, Texas Instruments Incorporated
Product Folder Links: SN74LVC2G241
11
PACKAGE OPTION ADDENDUM
www.ti.com
29-Jan-2021
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
74LVC2G241DCTRE4
ACTIVE
SM8
DCT
8
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
C41
Z
74LVC2G241DCTRG4
ACTIVE
SM8
DCT
8
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
C41
Z
74LVC2G241DCUTG4
ACTIVE
VSSOP
DCU
8
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
C41R
SN74LVC2G241DCTR
ACTIVE
SM8
DCT
8
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
C41
Z
SN74LVC2G241DCUR
ACTIVE
VSSOP
DCU
8
3000
RoHS & Green
NIPDAU | SN
Level-1-260C-UNLIM
-40 to 125
(C41J, C41Q, C41R)
SN74LVC2G241DCUT
ACTIVE
VSSOP
DCU
8
250
RoHS & Green
NIPDAU | SN
Level-1-260C-UNLIM
-40 to 125
(C41J, C41Q, C41R)
SN74LVC2G241YZPR
ACTIVE
DSBGA
YZP
8
3000
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 125
(C2, C27)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
工商网监
湘ICP备2023018690号
