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SN75468, SN75469
SLRS023E – DECEMBER 1976 – REVISED JANUARY 2015
SN7546x Darlington Transistor Arrays
1 Features
3 Description
•
•
•
•
•
•
The SN75468 and SN75469 are high-voltage, highcurrent Darlington transistor arrays. Each consists of
seven NPN Darlington pairs that feature high-voltage
outputs with common-cathode clamp diodes for
switching inductive loads. The collector-current rating
of each Darlington pair is 500 mA. The Darlington
pairs may be paralleled for higher current capability.
Applications include relay drivers, hammer drivers,
lamp drivers, display drivers (LED and gas
discharge), line drivers, and logic buffers.
1
500-mA Rated Collector Current (Single Output)
High-Voltage Output 100 V
Output Clamp Diodes
Inputs Compatible With Various Types of Logic
Relay Driver Applications
Higher-Voltage Versions of ULN2003A and
ULN2004A, for Commercial Temperature range
2 Applications
•
•
•
•
•
•
Relay Drivers
Hammer Drivers
Lamp Drivers
Display Drivers (LED and Gas Discharge)
Line Drivers
Logic Buffers
The SN75468 has a 2700-Ω series base resistor for
each Darlington pair for operation directly with TTL or
5-V CMOS. The SN75469 has a 10.5-kΩ series base
resistor to allow its operation directly with CMOS or
PMOS that use supply voltages of 6 to 15 V. The
required input current is below that of the SN75468.
Device Information(1)
PART NUMBER
SN7546x
PACKAGE (PIN)
BODY SIZE (NOM)
D (16)
9.90 mm × 3.91 mm
N (16)
19.30 mm × 6.35 mm
NS (16)
10.30 mm × 5.30 mm
(1) For all available packages, see the orderable addendum at
the end of the datasheet.
4 Simplified Schematic
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
SN75468, SN75469
SLRS023E – DECEMBER 1976 – REVISED JANUARY 2015
www.ti.com
Table of Contents
1
2
3
4
5
6
7
8
9
Features ..................................................................
Applications ...........................................................
Description .............................................................
Simplified Schematic.............................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
1
2
3
4
7.1
7.2
7.3
7.4
7.5
7.6
7.7
4
4
4
4
5
5
6
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Switching Characteristics ..........................................
Typical Characteristics ..............................................
Parameter Measurement Information .................. 7
Detailed Description .............................................. 9
9.1 Overview ................................................................... 9
9.2 Functional Block Diagram ......................................... 9
9.3 Feature Description................................................... 9
9.4 Device Functional Modes.......................................... 9
10 Application and Implementation........................ 10
10.1 Application Information.......................................... 10
10.2 Typical Application ............................................... 10
10.3 System Examples ................................................. 12
11 Power Supply Recommendations ..................... 14
12 Layout................................................................... 14
12.1 Layout Guidelines ................................................. 14
12.2 Layout Example .................................................... 14
13 Device and Documentation Support ................. 15
13.1
13.2
13.3
13.4
Related Links ........................................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
15
15
15
15
14 Mechanical, Packaging, and Orderable
Information ........................................................... 15
5 Revision History
Changes from Revision D (November 2004) to Revision E
Page
•
Added Applications, Device Information table, Pin Functions table, ESD Ratings table, Thermal Information table,
Typical Characteristics, Feature Description section, Device Functional Modes, Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section. ................................................................................................. 1
•
Deleted Ordering Information table. ....................................................................................................................................... 1
2
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SLRS023E – DECEMBER 1976 – REVISED JANUARY 2015
6 Pin Configuration and Functions
Pin Functions
PIN
NAME
NO.
TYPE
DESCRIPTION
B
1-7
I
Channel 1 through 7 darlington base input
C
16 - 10
O
Channel 1 through 7 darlington collector output
E
7
—
Common Emmitter shared by all channels (typically tied to ground)
COM
8
I/O
Common cathode node for flyback diodes (required for inductive loads)
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SLRS023E – DECEMBER 1976 – REVISED JANUARY 2015
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7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
MIN
VCE
MAX
UNIT
100
V
Collector-emitter voltage
VI
Input voltage
IOK
(2)
30
V
Peak collector current
500
mA
Output clamp current
500
mA
Total emitter-terminal current
–2.5
A
TJ
Operating virtual junction temperature
150
°C
Tstg
Storage temperature range
150
°C
(1)
(2)
–65
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltage values are with respect to the emitter/substrate terminal E, unless otherwise noted.
7.2 ESD Ratings
VALUE
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins
V(ESD)
(1)
(2)
Electrostatic discharge
(1)
UNIT
±2000
Charged device model (CDM), per JEDEC specification JESD22-C101,
all pins (2)
±500
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
VI
VCC
TJ
Junction Temperature
MIN
MAX
0
5
UNIT
0
100
V
–40
125
°C
V
7.4 Thermal Information
SN7546x
THERMAL METRIC (1)
D
UNIT
16 PINS
RθJA
Junction-to-ambient thermal resistance
RθJC(top)
Junction-to-case (top) thermal resistance
40.3
RθJB
Junction-to-board thermal resistance
38.9
ψJT
Junction-to-top characterization parameter
10.9
ψJB
Junction-to-board characterization parameter
38.7
RθJC(bot)
Junction-to-case (bottom) thermal resistance
N/A
(1)
4
73
°C/W
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
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7.5 Electrical Characteristics
TA = 25°C (unless otherwise noted)
TEST CONDITIONS (1)
PARAMETER
SN75468
MIN
SN75469
TYP
MAX
MIN
TYP
UNIT
MAX
IC = 125 mA
VI(on)
On-state input voltage
VCE = 2 V
IC = 200 mA
2.4
IC = 250 mA
2.7
V
IC = 275 mA
IC = 300 mA
3
IC = 350 mA
VCE(sat)
Collector-emitter saturation voltage
VF
Clamp-diode forward voltage
ICEX
collector cutoff current
II = 250 µA, IC = 100 mA
0.9
1.1
0.9
1.1
II = 350 µA, IC = 100 mA
1
1.3
1
1.3
II = 500 µA, IC = 100 mA
1.2
1.6
1.2
1.6
IF = 350 mA
1.7
2
1.7
2
VCE = 100 V, II = 0
II(off)
Off-state input current
VCE = 100 V,
TA = 70°C
II = 0
Input current
50
100
VI = 1 V
VCE = 50 V, IC = 500 µA, TA = 70°C
50
65
50
0.93
Clamp-diode reverse current
Ci
Input Capacitance
(1)
µA
VI = 5 V
VR = 100 V
VR = 100 V, TA = 70°C
VI = 0, f = 1 MHz
65
µA
1.35
VI = 12 V
IR
V
500
VI = 3.85 V
II
50
100
V
15
0.35
0.5
1
1.45
50
50
100
10
25
15
mA
µA
25
pF
All electrical characteristics are measured with 0.1-µF capacitors connected at REF, CT, and VCC to GND.
7.6 Switching Characteristics
TA = 25°C free-air temperature
TEST CONDITIONS (1)
PARAMETER
tPLH
Propagation delay time, low-to-high-level
output
tPHL
Propagation delay time, high-to-low-level
output
VOH
High-level output voltage after switching
(1)
MIN
VS = 20 V, RL = 163 Ω, CL = 15 pF,
See Figure 14
VS = 50 V, IO = 300 mA, See
Figure 14
VS – 20
TYP
MAX
UNIT
0.25
1
µs
0.25
1
µs
mV
All switching characteristics are measured with 0.1-µF capacitors connected at REF and VCC to GND.
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7.7 Typical Characteristics
Figure 1. Collector-Emitter Saturation Voltage
vs
Collector Current (One Darlington)
Figure 2. Collector-Emitter Saturation Voltage
vs
Total Collector Current (Two Darlingtons in Parallel)
Figure 3. Output Current vs Input Current
Figure 4. D Package Maximum Collector Current
vs
Duty Cycle
Figure 5. N Package Maximum Collector Current
vs
Duty Cycle
6
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8 Parameter Measurement Information
Figure 6. ICEX
Figure 7. ICES
Figure 8. II(off)
Figure 9. II
Figure 10. VI(on)
Figure 11. hFE, VCE(sat)
Figure 12. IR
Figure 13. VF
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Parameter Measurement Information (continued)
A.
The pulse generator has the following characteristics: PRR = 12.5 kHz, ZO = 50 Ω.
B.
CL includes probe and jig capacitance.
C.
For testing the ’468, VIH = 3 V; for the ’469, VIH = 8 V.
Figure 14. Test Circuit and Voltage Waveforms
A.
The pulse generator has the following characteristics: PRR = 12.5 kHz, ZO = 50 Ω.
B.
CL includes probe and jig capacitance.
C.
For testing the ’468, VIH = 3 V; for the ’469, VIH = 8 V.
Figure 15. Latch-Up Test Circuit and Voltage Waveforms
8
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9 Detailed Description
9.1 Overview
This standard device has proven ubiquity and versatility across a wide range of applications. This is due to its
integration of 7 Darlington transistors that are capable of sinking up to 500 mA and wide GPIO range capability.
The SN75468 comprises seven high voltage, high current NPN Darlington transistor pairs. All units feature a
common emitter and open collector outputs. To maximize their effectiveness, these units contain suppression
diodes for inductive loads. The SN75468 has a series base resistor to each Darlington pair, thus allowing
operation directly with TTL or CMOS operating at supply voltages of 5.0 V or 3.3 V. The SN75468 offers
solutions to a great many interface needs, including solenoids, relays, lamps, small motors, and LEDs.
Applications requiring sink currents beyond the capability of a single output may be accommodated by paralleling
the outputs.
This device can operate over a wide temperature range (–40°C to 105°C).
9.2 Functional Block Diagram
9.3 Feature Description
Each channel of SN75468 consists of Darlington connected NPN transistors. This connection creates the effect
of a single transistor with a very high current gain (β2). This can be as high as 10,000 A/A at certain currents.
The very high β allows for high output current drive with a very low input current, essentially equating to
operation with low GPIO voltages.
The GPIO voltage is converted to base current via the 2.7 kΩ resistor connected between the input and base of
the pre-driver Darlington NPN. The 7.2 kΩ & 3.0 kΩ resistors connected between the base and emitter of each
respective NPN act as pull-downs and suppress the amount of leakage that may occur from the input.
The diodes connected between the output and COM pin is used to suppress the kick-back voltage from an
inductive load that is excited when the NPN drivers are turned off (stop sinking) and the stored energy in the
coils causes a reverse current to flow into the coil supply via the kick-back diode.
In normal operation the diodes on base and collector pins to emitter will be reversed biased. If these diode are
forward biased, internal parasitic NPN transistors will draw (a nearly equal) current from other (nearby) device
pins.
9.4 Device Functional Modes
9.4.1 Inductive Load Drive
When the COM pin is tied to the coil supply voltage, SN75468 is able to drive inductive loads and supress the
kick-back voltage via the internal free wheeling diodes.
9.4.2 Resistive Load Drive
When driving a resistive load, a pull-up resistor is needed in order for SN75468 to sink current and for there to be
a logic high level. The COM pin can be left floating for these applications.
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10 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
10.1 Application Information
SN75468 will typically be used to drive a high voltage and/or current peripheral from an MCU or logic device that
cannot tolerate these conditions. The following design is a common application of SN75468, driving inductive
loads. This includes motors, solenoids & relays. Each load type can be modeled by what's seen in Figure 16.
10.2 Typical Application
VSUP
SN75468
3.3 V Logic
3.3 V Logic
3.3 V Logic
IN1
OUT1
IN2
OUT2
IN3
OUT3
IN4
OUT4
IN5
OUT5
IN6
OUT6
IN7
OUT7
GND
VSUP
COM
Figure 16. SN75468 as Inductive Load Driver
10.2.1 Design Requirements
For this design example, use the parameters listed in Table 1 as the input parameters.
Table 1. Design Parameters
10
DESIGN PARAMETER
EXAMPLE VALUE
GPIO Voltage
3.3 V or 5.0 V
Coil Supply Voltage
12 V to 100 V
Number of Channels
7
Output Current (RCOIL)
20 mA to 300 mA per channel
Duty Cycle
100%
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10.2.2 Detailed Design Procedure
When using SN75468 in a coil driving application, determine the following:
• Input voltage range
• Temperature range
• Output and drive current
• Power dissipation
10.2.2.1 Drive Current
The coil current is determined by the coil voltage (VSUP), coil resistance & output low voltage (VOL or VCE(SAT)).
ICOIL = (VSUP – VCE(SAT)) / RCOIL
(1)
10.2.2.2 Output Low Voltage
The output low voltage (VOL) is the same thing as VCE(SAT) and can be determined by the Electrical
Characteristics table, Figure 1, or Figure 2.
10.2.2.3 Power Dissipation & Temperature
The number of coils driven is dependent on the coil current and on-chip power dissipation. The number of coils
driven can be determined by Figure 4 or Figure 5.
For a more accurate determination of number of coils possible, use the below equation to calculate SN75468 onchip power dissipation PD:
N
PD = å VOLi ´ ILi
i=1
Where:
N is the number of channels active together.
VOLi is the OUTi pin voltage for the load current ILi. This is the same as VCE(SAT)
(2)
In order to guarantee reliability of SN75468 and the system the on-chip power dissipation must be lower that or
equal to the maximum allowable power dissipation (PD(MAX)) dictated by below equation Equation 3.
PD(MAX) =
(T
J(MAX)
- TA )
qJA
Where:
TJ(MAX) is the target maximum junction temperature.
TA is the operating ambient temperature.
θJA is the package junction to ambient thermal resistance.
(3)
It is recommended to limit SN75468 IC’s die junction temperature to less than 125°C. The IC junction
temperature is directly proportional to the on-chip power dissipation.
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10.2.3 Application Curves
13
12
11
10
9
8
7
6
5
4
3
2
1
0
-0.004
14
12
Output voltage - V
Output voltage - V
The following curves were generated with SN75468 driving an OMRON G5NB relay – Vin = 5.0V; Vsup= 12 V &
RCOIL= 2.8 kΩ
10
8
6
4
2
0
0.004
0.008
Time (s)
0.012
0
-0.004
0.016
0
D001
Figure 17. Output Response With Activation of Coil (Turn
On)
0.004
0.008
Time (s)
0.012
0.016
D001
Figure 18. Output Response With De-activation of Coil
(Turn Off)
10.3 System Examples
Figure 19. TTL to Load Schematic
12
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System Examples (continued)
Figure 20. Buffer to Higher Current Loads Schematic
Figure 21. Pull-up Resistor Schematic
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11 Power Supply Recommendations
This part does not need a power supply; however, the COM pin is typically tied to the system power supply.
When this is the case, it is very important to make sure that the output voltage does not heavily exceed the COM
pin voltage. This will heavily forward bias the fly-back diodes and cause a large current to flow into COM,
potentially damaging the on-chip metal or over-heating the part.
12 Layout
12.1 Layout Guidelines
Thin traces can be used on the input due to the low current logic that is typically used to drive SN75468. Care
must be taken to separate the input channels as much as possible, as to eliminate cross-talk. Thick traces are
recommended for the output, in order to drive whatever high currents that may be needed. Wire thickness can be
determined by the trace material's current density and desired drive current.
Since all of the channels currents return to a common emitter, it is best to size that trace width to be very wide.
Some applications require up to 2.5 A.
12.2 Layout Example
GND
1B
2B
1
2
16
15
1C
2C
3B
3
14
3C
4B
5B
4
13
12
4C
5C
6B
5
6
11
6C
7B
7
8
10
9
7C
E
VCOM
Figure 22. Package Layout
14
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13 Device and Documentation Support
13.1 Related Links
The table below lists quick access links. Categories include technical documents, support and community
resources, tools and software, and quick access to sample or buy.
Table 2. Related Links
PARTS
PRODUCT FOLDER
SAMPLE & BUY
TECHNICAL
DOCUMENTS
TOOLS &
SOFTWARE
SUPPORT &
COMMUNITY
SN75468
Click here
Click here
Click here
Click here
Click here
SN75469
Click here
Click here
Click here
Click here
Click here
13.2 Trademarks
All trademarks are the property of their respective owners.
13.3 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
13.4 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
14 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
www.ti.com
14-Aug-2021
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
SN75468D
ACTIVE
SOIC
D
16
40
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
0 to 70
SN75468
SN75468DE4
ACTIVE
SOIC
D
16
40
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
0 to 70
SN75468
SN75468DR
ACTIVE
SOIC
D
16
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
0 to 70
SN75468
SN75468N
ACTIVE
PDIP
N
16
25
RoHS & Green
NIPDAU
N / A for Pkg Type
0 to 70
SN75468N
SN75468NE4
ACTIVE
PDIP
N
16
25
RoHS & Green
NIPDAU
N / A for Pkg Type
0 to 70
SN75468N
SN75468NSR
ACTIVE
SO
NS
16
2000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
0 to 70
SN75468
SN75468NSRG4
ACTIVE
SO
NS
16
2000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
0 to 70
SN75468
SN75469D
ACTIVE
SOIC
D
16
40
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
0 to 70
SN75469
SN75469DE4
ACTIVE
SOIC
D
16
40
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
0 to 70
SN75469
SN75469DR
ACTIVE
SOIC
D
16
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
0 to 70
SN75469
SN75469N
ACTIVE
PDIP
N
16
25
RoHS & Green
NIPDAU
N / A for Pkg Type
0 to 70
SN75469N
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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