TAS5112ADCAR

TAS5112A www.ti.com SLES094B - OCTOBER 2003 - REVISED JUNE 2008 TM DIGITAL AMPLIFIER POWER STAGE FEATURES D 50 W per Channel (BTL) Into 6 Ω (Stereo) D 95-dB Dynamic Range With TAS5026 D Less Than 0.1% THD+N (1 W RMS Into 6 Ω) D Less Than 0.2% THD+N (50 W RMS into 6 Ω) D Power Efficiency Typically 90% Into 6-Ω Load D Self-Protecting Design (Undervoltage, D D Overtemperature and Short Conditions) With Error Reporting Internal Gate Drive Supply Voltage Regulator EMI Compliant When Used With Recommended System Design APPLICATIONS D DVD Receiver D Home Theatre D Mini/Micro Component Systems D Internet Music Appliance DESCRIPTION The TAS5112A is a high-performance, integrated stereo digital amplifier power stage designed to drive 6-Ω speakers at up to 50 W per channel. The device incorporates TI’s PurePath Digitalt technology and is used with a digital audio PWM processor (TAS50XX) and a simple passive demodulation filter to deliver high-quality, high-efficiency, true-digital audio amplification. The efficiency of this digital amplifier is typically 90%, reducing the size of both the power supplies and heatsinks needed. Overcurrent protection, overtemperature protection, and undervoltage protection are built into the TAS5112A, safeguarding the device and speakers against fault conditions that could damage the system. THD + NOISE vs OUTPUT POWER THD + NOISE vs FREQUENCY 1 RL = 6 Ω TC = 75°C THD+N - Total Harmonic Distortion + Noise - % THD+N - Total Harmonic Distortion + Noise - % 1 0.1 0.01 100m 1 10 100 PO - Output Power - W RL = 6 Ω TC = 75°C PO = 50 W 0.1 PO = 10 W PO = 1 W 0.01 0.001 20 100 1k 10k 20k f - Frequency - Hz Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PurePath Digital and PowerPAD are trademarks of Texas Instruments. Other trademarks are the property of their respective owners. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2008, Texas Instruments Incorporated TAS5112A www.ti.com SLES094B - OCTOBER 2003 - REVISED JUNE 2008 These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. GENERAL INFORMATION Terminal Assignment The TAS5112A is offered in a thermally enhanced 56-pin TSSOP DFD (thermal pad is on the top) and DCA (thermal pad is on the bottom), shown as follows. DFD PACKAGE (TOP VIEW) GND GND GREG OTW SD_CD SD_AB PWM_DP PWM_DM RESET_CD PWM_CM PWM_CP DREG_RTN M3 M2 M1 DREG PWM_BP PWM_BM RESET_AB PWM_AM PWM_AP GND DGND GND DVDD GREG GND GND 2 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 DCA PACKAGE (TOP VIEW) 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 GND GVDD BST_D PVDD_D PVDD_D OUT_D OUT_D GND GND OUT_C OUT_C PVDD_C PVDD_C BST_C BST_B PVDD_B PVDD_B OUT_B OUT_B GND GND OUT_A OUT_A PVDD_A PVDD_A BST_A GVDD GND GND GND GREG DVDD GND DGND GND PWM_AP PWM_AM RESET_AB PWM_BM PWM_BP DREG M1 M2 M3 DREG_RTN PWM_CP PWM_CM RESET_CD PWM_DM PWM_DP SD_AB SD_CD OTW GREG GND GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 GND GVDD BST_A PVDD_A PVDD_A OUT_A OUT_A GND GND OUT_B OUT_B PVDD_B PVDD_B BST_B BST_C PVDD_C PVDD_C OUT_C OUT_C GND GND OUT_D OUT_D PVDD_D PVDD_D BST_D GVDD GND TAS5112A www.ti.com SLES094B - OCTOBER 2003 - REVISED JUNE 2008 Absolute Maximum Ratings Package Dissipation Ratings over operating free-air temperature range unless otherwise noted(1) PACKAGE RθJC (°C/W) RθJA (°C/W) –0.3 V to 4.2 V 56-pin DFD TSSOP 1.14 See Note 4 GVDD TO GND 33.5 V 56-pin DCA TSSOP 1.14 See Note 4 PVDD_X TO GND (dc voltage) 33.5 V TAS5112A DVDD TO DGND PVDD_X TO GND (spike voltage(2)) OUT_X TO GND (dc voltage) UNITS 48 V 33.5 V OUT_X TO GND (spike voltage(2)) 48 V BST_X TO GND (dc voltage) 48 V BST_X TO GND (spike voltage(2)) 53 V GREG TO GND (3) PWM_XP, RESET, M1, M2, M3, SD, OTW 14.2 V –0.3 V to DVDD + 0.3 V Maximum operating junction temperature, TJ –40°C to 150°C Storage temperature –40°C to 125°C (1) Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. (2) The duration of voltage spike should be less than 100 ns; see application note SLEA025. (3) GREG is treated as an input when the GREG pin is overdriven by GVDD of 12 V. (4) The TAS5112A package is thermally enhanced for conductive cooling using an exposed metal pad area. It is impractical to use the device with the pad exposed to ambient air as the only heat sinking of the device. For this reason, RθJA, a system parameter that characterizes the thermal treatment, is provided in the Application Information section of the data sheet. An example and discussion of typical system RθJA values are provided in the Thermal Information section. This example provides additional information regarding the power dissipation ratings. This example should be used as a reference to calculate the heat dissipation ratings for a specific application. TI application engineering provides technical support to design heatsinks if needed. Ordering Information TA PACKAGE DESCRIPTION 0°C to 70°C TAS5112ADFD 56-pin small TSSOP 0°C to 70°C TAS5112ADCA 56-pin small TSSOP For the most current specification and package information, refer to our Web site at www.ti.com. 3 TAS5112A www.ti.com SLES094B - OCTOBER 2003 - REVISED JUNE 2008 Terminal Functions TERMINAL FUNCTION(1) DESCRIPTION 54 P High-side bootstrap supply (BST), external capacitor to OUT_A required 42 43 P High-side bootstrap supply (BST), external capacitor to OUT_B required 43 42 P HS bootstrap supply (BST), external capacitor to OUT_C required BST_D 54 31 P HS bootstrap supply (BST), external capacitor to OUT_D required DGND 23 6 P Digital I/O reference ground DREG 16 13 P Digital supply voltage regulator decoupling pin, capacitor connected to GND DREG_RTN 12 17 P Digital supply voltage regulator decoupling return pin 25 4 P I/O reference supply input (3.3 V) 1, 2, 22, 24, 27, 28, 29, 36, 37, 48, 49, 56 1, 2, 5, 7, 27, 28, 29, 36, 37, 48, 49, 56 P Power ground NAME DFD NO. DCA NO. BST_A 31 BST_B BST_C DVDD GND GREG 3, 26 3, 26 P Gate drive voltage regulator decoupling pin, capacitor to REG_GND GVDD 30, 55 30, 55 P Voltage supply to on-chip gate drive and digital supply voltage regulators M1 (TST0) 15 14 I Mode selection pin M2 14 15 I Mode selection pin M3 13 16 I Mode selection pin OTW 4 25 O Overtemperature warning output, open drain with internal pullup resistor OUT_A 34, 35 50, 51 O Output, half-bridge A OUT_B 38, 39 46, 47 O Output, half-bridge B OUT_C 46, 47 38, 39 O Output, half-bridge C OUT_D 50, 51 34, 35 O Output, half-bridge D PVDD_A 32, 33 52, 53 P Power supply input for half-bridge A PVDD_B 40, 41 44, 45 P Power supply input for half-bridge B PVDD_C 44, 45 40,41 P Power supply input for half-bridge C PVDD_D 52, 53 32, 33 P Power supply input for half-bridge D PWM_AM 20 9 I Input signal (negative), half-bridge A PWM_AP 21 8 I Input signal (positive), half-bridge A PWM_BM 18 11 I Input signal (negative), half-bridge B PWM_BP 17 12 I Input signal (positive), half-bridge B PWM_CM 10 19 I Input signal (negative), half-bridge C PWM_CP 11 18 I Input signal (positive), half-bridge C PWM_DM 8 21 I Input signal (negative), half-bridge D PWM_DP 7 22 I Input signal (positive), half-bridge D RESET_AB 19 10 I Reset signal, active low RESET_CD 9 20 I Reset signal, active low SD_AB 6 23 O Shutdown signal for half-bridges A and B, active-low SD_CD 5 24 O Shutdown signal for half-bridges C and D, active-low (1) 4 I = input, O = Output, P = Power TAS5112A www.ti.com SLES094B - OCTOBER 2003 - REVISED JUNE 2008 FUNCTIONAL BLOCK DIAGRAM BST_A GREG PVDD_A Gate Drive PWM_AP PWM Receiver OUT_A Timing Control Gate Drive GND Protection A BST_B RESET GREG PVDD_B Protection B Gate Drive PWM_BP PWM Receiver OUT_B Timing Control Gate Drive To Protection Blocks GND DREG DREG GVDD OTW GREG OT Protection SD GREG GREG DREG GREG UVP DREG_RTN DREG_RTN This diagram shows one channel. 5 TAS5112A www.ti.com SLES094B - OCTOBER 2003 - REVISED JUNE 2008 RECOMMENDED OPERATING CONDITIONS (1) MIN TYP MAX UNIT DVDD Digital supply Relative to DGND 3 3.3 3.6 V GVDD Supply for internal gate drive and logic regulators Relative to GND 16 29.5 30.5 V PVDD_x Half-bridge supply Relative to GND, RL= 6 Ω to 8 Ω 0 29.5 30.5 V TJ Junction temperature 125 _C (1) 0 It is recommended for DVDD to be connected to DREG via a 100-Ω resistor. ELECTRICAL CHARACTERISTICS PVDD_X = 29.5 V, GVDD = 29.5 V, DVDD connected to DREG via a 100-Ω resistor, RL = 6 Ω, 8X fs = 384 kHz, unless otherwise noted TYPICAL SYMBOL PARAMETER TEST CONDITIONS TA=25°C OVER TEMPERATURE TA=25°C TCase= 75°C TA=40°C TO 85°C UNITS MIN/TYP/ MAX AC PERFORMANCE, BTL Mode, 1 kHz Po THD+N Output power Total harmonic distortion + noise RL = 8 Ω, THD = 0.2%, AES17 filter, 1 kHz 40 W Typ RL = 8 Ω, THD = 10%, AES17 filter, 1 kHz 50 W Typ RL = 6 Ω, THD = 0.2%, AES17 filter, 1 kHz 50 W Typ RL = 6 Ω, THD = 10%, AES17 filter, 1 kHz 62 W Typ Po = 1 W/ channel, RL = 6 Ω, AES17 filter 0.03% Typ Po = 10 W/channel, RL = 6 Ω, AES17 filter 0.04% Typ Po = 50 W/channel, RL = 6 Ω, AES17 filter 0.2% Typ Vn Output integrated voltage noise A-weighted, mute, RL = 6 Ω,, 20 Hz to 20 kHz, AES17 filter 260 µV Max SNR Signal-to-noise ratio A-weighted, AES17 filter 96 dB Typ DR Dynamic range f = 1 kHz, A-weighted, AES17 filter 96 dB Typ INTERNAL VOLTAGE REGULATOR DREG Voltage regulator Io = 1 mA, PVDD = 18 V to 30.5 V 3.1 V Typ GREG Voltage regulator Io = 1.2 mA, PVDD = 18 V to 30.5 V 13.4 V Typ IGVDD GVDD supply current, operating fS = 384 kHz, no load, 50% duty cycle 24 (1) mA Max IDVDD DVDD supply current, operating fS = 384 kHz, no load 5 mA Max 1 OUTPUT STAGE MOSFETs RDSon,LS Forward on-resistance, low side TJ = 25°C 155 mΩ Typ RDSon,HS Forward on-resistance, high side TJ = 25°C 155 mΩ Typ (1) 6 Measured with TI standard manufacturing hardware configuration TAS5112A www.ti.com SLES094B - OCTOBER 2003 - REVISED JUNE 2008 ELECTRICAL CHARACTERISTICS PVDD_x = 29.5 V, GVDD = 29.5 V, DVDD connected to DREG via a 100-Ω resistor, RL = 6 Ω, 8X fs = 384 kHz, unless otherwise noted TYPICAL SYMBOL PARAMETER TEST CONDITIONS TA=25°C OVER TEMPERATURE TCase= 75°C TA=40°C TO 85°C UNITS MIN/TYP/ MAX 6.9 V Min 7.9 V Max TA=25°C INPUT/OUTPUT PROTECTION Vuvp,G Undervoltage protection limit, GVDD Set the DUT in normal operation mode with all the protections enabled. Sweep GVDD up and down. down Monitor SD output. Record the GREG reading when SD is triggered. 74 7.4 OTW Overtemperature warning, junction temperature 125 °C Typ OTE Overtemperature error, junction temperature 150 °C Typ OC Overcurrent protection 6.7 A Typ 2 V Min DVDD V Max 0.8 V Max -10 µA Min 10 µA Max 22.5 kΩ Min 0.4 V Max See Note 1. STATIC DIGITAL SPECIFICATION PWM_AP, PWM_BP, M1, M2, M3, SD, OTW VIH High level input voltage High-level VIL Low-level input voltage L k Leakage I Input t leakage l k currentt OTW/SHUTDOWN (SD) Internally pull up R from OTW/SD to DVDD VOL (1) Low-level output voltage 30 IO = 4 mA To optimize device performance and prevent overcurrent (OC) protection tripping, the demodulation filter must be designed with special care. See Demodulation Filter Design in the Application Information section of the data sheet and consider the recommended inductors and capacitors for optimal performance. It is also important to consider PCB design and layout for optimum performance of the TAS5112A. It is recommended to follow the TAS5112F2EVM (S/N 112) design and layout guidelines for best performance. 7 TAS5112A www.ti.com SLES094B - OCTOBER 2003 - REVISED JUNE 2008 SYSTEM CONFIGURATION USED FOR CHARACTERIZATION Gate-Drive Power Supply External Power Supply H-Bridge Power Supply TAS5112ADFD 1 1 µF 56 GND GND 2 55 GND GVDD 3 GREG 4 53 OTW PVDD_D SD_CD PVDD_D SD_AB OUT_D PWM_DP OUT_D 5 6 ERR_RCVY 49 PWM_DM 11 12 100 nF PWM PROCESSOR TAS5026 13 14 PWM_AP_2 PWM_CP M3 PVDD_C M2 BST_C M1 BST_B PWM_BP PVDD_B PWM_BM OUT_B RESET_AB OUT_B PWM_AM GND PWM_AP GND 8 † 1.5 Ω 35 GND OUT_A 34 DGND 10 µH 4.7 kΩ 470 nF 100 nF OUT_A 1.5 Ω PVDD_A 31 BST_A 27 GND GVDD GND GND Voltage suppressor diodes: 1SMA33CAT LPCB : Track in the PCB (1,0 mm wide and 50 mm long) 100 nF 4.7 kΩ 100 nF PVDD_A 32 GREG 10 µH † 33 DVDD ‡ 37 36 25 † 100 nF 38 24 28 LPCB‡ 33 nF 39 GND 1 µF 1000 µF 42 1.5 Ω 40 23 26 LPCB‡ 33 nF 43 PVDD_B 21 100 nF 44 41 DREG 100 nF 4.7 kΩ 100 nF 45 PVDD_C 20 22 10 µH † OUT_C DREG_RTN 19 100 Ω 1.5 Ω 46 18 VALID_2 4.7 kΩ GND OUT_C 17 PWM_AM_2 10 µH 470 nF 100 nF 47 PWM_CM 15 16 † 1.5 Ω 48 RESET_CD 10 100 nF GND 9 VALID_1 52 50 8 PWM_AM_1 100 nF LPCB‡ 33 nF 51 7 PWM_AP_1 54 1.5 Ω BST_D 33 nF LPCB‡ 1000 µF 30 1.5 Ω 29 100 nF TAS5112A www.ti.com SLES094B - OCTOBER 2003 - REVISED JUNE 2008 TYPICAL CHARACTERISTICS AND SYSTEM PERFORMANCE OF TAS5112ADFD EVM WITH TAS5026 PWM PROCESSOR TOTAL HARMONIC DISTORTION + NOISE vs FREQUENCY NOISE AMPLITUDE vs FREQUENCY 0 RL = 6 Ω TC = 75°C RL = 6Ω FFT = -60 dB TC = 75°C TAS5026 Front End Device −20 PO = 50 W −40 Noise Amplitude - dBr THD+N - Total Harmonic Distortion + Noise - % 1 0.1 PO = 10 W PO = 1 W 0.01 −60 −80 −100 −120 −140 0.001 20 −160 100 1k 0 10k 20k 2 4 6 f - Frequency - Hz Figure 1 10 12 14 16 18 20 22 Figure 2 TOTAL HARMONIC DISTORTION + NOISE vs OUTPUT POWER OUTPUT POWER vs H-BRIDGE VOLTAGE 10 60 RL = 6 Ω TC = 75°C TA = 75°C 50 PO - Output Power - W THD+N - Total Harmonic Distortion + Noise - % 8 f - Frequency - kHz 1 0.1 40 RL = 6 Ω 30 RL = 8 Ω 20 10 0.01 0.1 0 1 10 PO - Output Power - W Figure 3 100 0 4 8 12 16 20 24 28 32 VDD - Supply Voltage - V Figure 4 9 TAS5112A www.ti.com SLES094B - OCTOBER 2003 - REVISED JUNE 2008 POWER LOSS vs OUTPUT POWER 100 11 90 10 80 9 f = 1 kHz RL = 6 Ω TC = 75°C 8 70 Ptot - Power Loss - W η - System Output Stage Efficiency - % SYSTEM OUTPUT STAGE EFFICIENCY vs OUTPUT POWER 60 50 40 30 20 6 5 4 3 2 f = 1 kHz RL = 6 Ω TC = 75°C 10 7 1 0 0 0 5 10 15 20 25 30 35 40 45 50 55 60 65 0 PO - Output Power - W 5 10 15 20 25 30 35 40 45 50 55 60 65 PO - Output Power - W Figure 5 Figure 6 OUTPUT POWER vs CASE TEMPERATURE AMPLITUDE vs FREQUENCY 60 3.0 PVDD = 29.5 V RL = 6 Ω 58 2.5 2.0 56 Amplitude - dBr PO - Output Power - W 1.5 54 52 50 Channel 1 48 Channel 2 46 1.0 RL = 8 Ω 0.5 0.0 −0.5 −1.0 RL = 6 Ω −1.5 44 −2.0 42 −2.5 40 0 20 40 60 80 100 TC - Case Temperature - °C Figure 7 10 120 140 −3.0 10 100 1k f - Frequency - Hz Figure 8 10k 50k TAS5112A www.ti.com SLES094B - OCTOBER 2003 - REVISED JUNE 2008 ON-STATE RESISTANCE vs JUNCTION TEMPERATURE 200 ron - On-State Resistance - mΩ 190 180 170 160 150 140 130 120 0 10 20 30 40 50 60 70 80 90 100 TJ - Junction Temperature - °C Figure 9 11 TAS5112A www.ti.com From PWM Processor SLES094B - OCTOBER 2003 - REVISED JUNE 2008 Figure 10. Typical Single-Ended Design With TAS5112A DCA 12 TAS5112A www.ti.com SLES094B - OCTOBER 2003 - REVISED JUNE 2008 THEORY OF OPERATION POWER SUPPLIES The power device only requires two supply voltages, GVDD and PVDD_X. GVDD is the gate drive supply for the device, regulated internally down to approximately 12 V, and decoupled with regards to board GND on the GREG pins through an external capacitor. GREG powers both the low side and high side via a bootstrap step-up conversion. The bootstrap supply is charged after the first low-side turn-on pulse. Internal digital core voltage DREG is also derived from GVDD and regulated down by internal circuitry to 3.3 V. The gate-driver regulator can be bypassed for reducing idle loss in the device by shorting GREG to GVDD and directly feeding in 12.0 V. This can be useful in an application where thermal conduction of heat from the device is difficult. PVDD_X is the H-bridge power supply pin. Two power pins exists for each half-bridge to handle the current density. It is important that the circuitry recommendations concerning the PVDD_X pins are followed carefully both topologyand layout-wise. For topology recommendations, see the System Configuration Used for Characterization section. Following these recommendations is important for parameters like EMI, reliability, and performance. POWERING UP > 1 ms > 1 ms RESET GVDD 4.7-kΩ pulldown resistor on each PWM output node to ground. This precharges the bootstrap supply capacitors and discharges the output filter capacitor. After GVDD has been applied, it takes approximately 800 µs to fully charge the BST capacitor. Within this time, RESET must be kept low. After approximately 1 ms, the back-end bootstrap capacitor is charged. RESET can now be released if the modulator is powered up and streaming valid PWM signals to the back-end PWM_xP. Valid means a switching PWM signal which complies with the frequency and duty cycle ranges stated in the Recommended Operating Conditions. A constant HIGH dc level on the PWM_xP is not permitted, because it would force the high-side MOSFET ON until it eventually ran out of BST capacitor energy and might damage the device. An unknown state of the PWM output signals from the modulator is illegal and should be avoided, which in practice means that the PWM processor must be powered up and initialized before RESET is de-asserted HIGH to the back end. POWERING DOWN For power down of the back end, an opposite approach is necessary. The RESET must be asserted LOW before the valid PWM signal is removed. When PWM processors are used with TI PurePath Digital amplifiers, the correct timing control of RESET and PWM_xP is performed by the modulator. PRECAUTION The TAS5112A must always start up in the high-impedance (Hi-Z) state. In this state, the bootstrap (BST) capacitor is precharged by a resistor on each PWM output node to ground. See the system configuration. This ensures that the back end is ready for receiving PWM pulses, indicating either HIGH- or LOW-side turnon after RESET is de-asserted to the back end. With the following pulldown resistor and BST capacitor size, the charge time is: PVDD_X PWM_xP NOTE: PVDD should not be powered up before GVDD. During power up when RESET is asserted LOW, all MOSFETs are turned off and the two internal half-bridges are in the high-impedance state (Hi-Z). The bootstrap capacitors supplying high-side gate drive are not charged at this point. To comply with the click and pop scheme and use of non-TI modulators, it is recommended to use a C = 33 nF, R = 4.7 kΩ R × C × 5 = 775.5 µs After GVDD has been applied, it takes approximately 800 µs to fully charge the BST capacitor. During this time, RESET must be kept low. After approximately 1 ms the back end BST is charged and ready. RESET can now be released if the PWM modulator is ready and is streaming valid PWM signals to the back end. Valid PWM signals are switching PWM signals with a frequency between 350–400 kHz. A constant HIGH level on the PWM+ would force the high-side MOSFET ON until it eventually ran out of BST capacitor energy. Putting the device in this condition should be avoided. 13 TAS5112A www.ti.com SLES094B - OCTOBER 2003 - REVISED JUNE 2008 In practice this means that the DVDD-to-PWM processor (front-end) should be stable and initialization should be completed before RESET is de-asserted to the back end. The device can be recovered by toggling RESET low and then high, after all errors are cleared. Overcurrent (OC) Protection CONTROL I/O Shutdown Pin: SD The SD pin functions as an output pin and is intended for protection-mode signaling to, for example, a controller or other front-end device. The pin is open-drain with an internal pullup resistor to DVDD. The logic output is, as shown in the following table, a combination of the device state and RESET input: Overtemperature (OT) Protection A dual temperature protection system asserts a warning signal when the device junction temperature exceeds 125°C. The OT protection circuit is shared by all half-bridges. SD RESET 0 0 Reserved 0 1 Device in protection mode, i.e., UV and/or OC and/or OT error Undervoltage (UV) Protection 1(2) 0 Device set high-impedance (Hi-Z), SD forced high 1 1 Normal operation Undervoltage lockout occurs when GVDD is insufficient for proper device operation. The UV protection system protects the device under power-up and power-down situations. The UV protection circuits are shared by all half-bridges. (2) DESCRIPTION The device has individual forward current protection on both high-side and low-side power stage FETs. The OC protection works only with the demodulation filter present at the output. See Demodulation Filter Design in the Application Information section of the data sheet for design constraints. SD is pulled high when RESET is asserted low independent of chip state (i.e., protection mode). This is desirable to maintain compatibility with some TI PWM front ends. Temperature Warning Pin: OTW The OTW pin gives a temperature warning signal when temperature exceeds the set limit. The pin is of the open-drain type with an internal pullup resistor to DVDD. OTW DESCRIPTION 0 Junction temperature higher than 125°C 1 Junction temperature lower than 125°C Reset Function The reset has two functions: D Reset is used for re-enabling operation after a latching error event. D Reset is used for disabling output stage switching (mute function). Overall Reporting The SD pin, together with the OTW pin, gives chip state information as described in Table 1. The error latch is cleared on the falling edge of reset and normal operation is resumed when reset goes high. Table 1. Error Signal Decoding OTW SD DESCRIPTION 0 0 Overtemperature error (OTE) 0 1 Overtemperature warning (OTW) 1 0 Overcurrent (OC) or undervoltage (UV) error 1 1 Normal operation, no errors/warnings Chip Protection The TAS5112A protection function is implemented in a closed loop with, for example, a system controller and TI PWM processor. The TAS5112A contains three individual systems protecting the device against error conditions. All of the error events covered result in the output stage being set in a high-impedance state (Hi-Z) for maximum protection of the device and connected equipment. 14 PROTECTION MODE Autorecovery (AR) After Errors (PMODE0) In autorecovery mode (PMODE0) the TAS5112A is self-supported in handling of error situations. All protection systems are active, setting the output stage in the high-impedance state to protect the output stage and connected equipment. However, after a short time period the device autorecovers, i.e., operation is automatically resumed provided that the system is fully operational. The autorecovery timing is set by counting PWM input cycles, i.e., the timing is relative to the switching frequency. The AR system is common to both half-bridges. TAS5112A www.ti.com SLES094B - OCTOBER 2003 - REVISED JUNE 2008 Timing and Function Table 3. Output Mode Selection The function of the autorecovery circuit is as follows: 1. An error event occurs and sets the protection latch (output stage goes Hi-Z). 2. The counter is started. 3. After n/2 cycles, the protection latch is cleared but the output stage remains Hi-Z (identical to pulling RESET low). 4. After n cycles, operation is resumed (identical to pulling RESET high) (n = 512). Error Protection Latch Shutdown M3 OUTPUT MODE 0 Bridge-tied load output stage (BTL) 1 Reserved APPLICATION INFORMATION DEMODULATION FILTER DESIGN AND SPIKE CONSIDERATIONS The output square wave is susceptible to overshoots (voltage spikes). The spike characteristics depend on many elements, including silicon design and application design and layout. The device should be able to handle narrow spike pulses, less than 65 ns, up to 65 volts peak. For more detailed information, see TI application report SLEA025. The PurePath Digital amplifier outputs are driven by heavy-duty DMOS transistors in an H-bridge configuration. These transistors are either off or fully on, which reduces the DMOS transistor on-state resistance, RDSon, and the power dissipated in the device, thereby increasing efficiency. SD Autorecovery PWM Counter AR-RESET Figure 11. Autorecovery Function Latching Shutdown on All Errors (PMODE1) In latching shutdown mode, all error situations result in a power down (output stage Hi-Z). Re-enabling can be done by toggling the RESET pin. The result is a square-wave output signal with a duty cycle that is proportional to the amplitude of the audio signal. It is recommended that a second-order LC filter be used to recover the audio signal. For this application, EMI is considered important; therefore, the selected filter is the full-output type shown in Figure 12. TAS51xx Output A L All Protection Systems Disabled (PMODE2) In PMODE2, all protection systems are disabled. This mode is purely intended for testing and characterization purposes and thus not recommended for normal device operation. R(Load) C1A C2 C1B Output B L MODE Pins Selection The protection mode is selected by shorting M1/M2 to DREG or DGND according to Table 2. Table 2. Protection Mode Selection M1 M2 0 0 Autorecovery after errors (PMODE 0) PROTECTION MODE 0 1 Latching shutdown on all errors (PMODE 1) 1 0 All protection systems disabled (PMODE 2) 1 1 Reserved The output configuration mode is selected by shorting the M3 pin to DREG or DGND according to Table 3. Figure 12. Demodulation Filter The main purpose of the output filter is to attenuate the high-frequency switching component of the PurePath Digital amplifier while preserving the signals in the audio band. Design of the demodulation filter affects the performance of the power amplifier significantly. As a result, to ensure proper operation of the overcurrent (OC) protection circuit and meet the device THD+N specifications, the selection of the inductors used in the output filter must be considered according to the following. The rule is that the inductance 15 TAS5112A www.ti.com SLES094B - OCTOBER 2003 - REVISED JUNE 2008 should remain stable within the range of peak current seen at maximum output power and deliver at least 5 µH of inductance at 15 A. If this rule is observed, the TAS5112A does not have distortion issues due to the output inductors, and overcurrent conditions do not occur due to inductor saturation in the output filter. Another parameter to be considered is the idle current loss in the inductor. This can be measured or specified as inductor dissipation (D). The target specification for dissipation is less than 0.05. In general, 10-µH inductors suffice for most applications. The frequency response of the amplifier is slightly altered by the change in output load resistance; however, unless tight control of frequency response is necessary (better than 0.5 dB), it is not necessary to deviate from 10 µH. The graph in Figure 13 displays the inductance vs current characteristics of two inductors that are recommended for use with the TAS5112A. INDUCTANCE vs CURRENT 11 The thermally augmented package provided with the TAS5112A is designed to be interfaced directly to heatsinks using a thermal interface compound (for example, Wakefield Engineering type 126 thermal grease.) The heatsink then absorbs heat from the ICs and couples it to the local air. If the heatsink is carefully designed, this process can reach equilibrium and heat can be continually removed from the ICs. Because of the efficiency of the TAS5112A, heatsinks can be smaller than those required for linear amplifiers of equivalent performance. RθJA is a system thermal resistance from junction to ambient air. As such, it is a system parameter with roughly the following components: D RθJC (the thermal resistance from junction to case, or in this case the metal pad) D D Thermal grease thermal resistance Heatsink thermal resistance The thermal grease thermal resistance can be calculated from the exposed pad area and the thermal grease manufacturer’s area thermal resistance (expressed in °C-in2/W). The area thermal resistance of the example thermal grease with a 0.002-inch thick layer is about 0.1 °C-in2/W. The approximate exposed pad area is as follows: 9 L - Inductance - µH THERMAL INFORMATION RθJC has been provided in the General Information section. DFB1310A 10 DASL983XX-1023 8 7 6 56-pin HTSSOP 5 0.045 in2 Dividing the example thermal grease area resistance by the surface area gives the actual resistance through the thermal grease for both ICs inside the package: 4 0 5 10 15 I - Current - A Figure 13. Inductance Saturation The selection of the capacitor that is placed across the output of each inductor (C2 in Figure 12) is simple. To complete the output filter, use a 0.47-µF capacitor with a voltage rating at least twice the voltage applied to the output stage (PVDD). This capacitor should be a good quality polyester dielectric such as a Wima MKS2-047ufd/100/10 or equivalent. 16 In order to minimize the EMI effect of unbalanced ripple loss in the inductors, 0.1-µF 50-V SMD capacitors (X7R or better) (C1A and C1B in Figure 12) should be added from the output of each inductor to ground. 56-pin HTSSOP 2.27 °C/W The thermal resistance of thermal pads is generally considerably higher than a thin thermal grease layer. Thermal tape has an even higher thermal resistance. Neither pads nor tape should be used with either of these two packages. A thin layer of thermal grease with careful clamping of the heatsink is recommended. It may be difficult to achieve a layer 0.001-inch thick or less, so the modeling below is done with a 0.002-inch thick layer, which may be more representative of production thermal grease thickness. TAS5112A www.ti.com SLES094B - OCTOBER 2003 - REVISED JUNE 2008 Table 5. Case 2 (2 × 50 W Unclipped Into 6 Ω, Channels in Separate Packages) (1) Heatsink thermal resistance is generally predicted by the heatsink vendor, modeled using a continuous flow dynamics (CFD) model, or measured. Thus, for a single monaural IC, the system RθJA = RθJC + thermal grease resistance + heatsink resistance. Table 4, Table 5, and Table 6 indicate modeled parameters for one or two TAS5112A ICs on a single heatsink. The final junction temperature is set at 110°C in all cases. It is assumed that the thermal grease is 0.002 inch thick and that it is similar in performance to Wakefield Type 126 thermal grease. It is important that the thermal grease layer is ≤0.002 inches thick and that thermal pads or tape are not used in the pad-to-heatsink interface due to the high power density that results in these extreme power cases. Table 4. Case 1 (2 × 50 W Unclipped Into 6 Ω, Both Channels in Same IC) (1) 56-Pin HTSSOP Ambient temperature 25°C Power to load (per channel) 50 W (unclipped) Power dissipation 4.5 W Delta T inside package 5.1°C Delta T through thermal grease 18.6°C Required heatsink thermal resistance 6.9°C/W Junction temperature 110°C System RθJA 19°C/W RθJA * power dissipation 85°C Junction temperature 85°C + 25°C = 110°C (1) In this case, the power is separated into two packages. Note that this allows a considerably smaller heatsink because twice as much area is available for heat transfer through the thermal grease. For this reason, separating the stereo channels into two ICs is recommended in full-power stereo tests made on multichannel systems. Table 6. Case 2A (2 × 60 W Into 6 Ω, Channels in Separate IC Packages) (1) 56-Pin HTSSOP 56-Pin HTSSOP Ambient temperature 25°C Ambient temperature 25°C Power to load (per channel) 60 W (10% THD) Power to load (per channel) 50 W (unclipped) Power dissipation per channel 5.4 W Power dissipation 4.5 W Delta T inside package Delta T inside package 10.2°C, note 2 × channel dissipation 6.1°C, note 2 × channel dissipation Delta T through thermal grease Delta T through thermal grease 37.1°C, note 2 × channel dissipation 22.3°C, note 2 × channel dissipation Required heatsink thermal resistance 5.3°C/W Required heatsink thermal resistance 4.2°C/W Junction temperature 110°C Junction temperature 110°C System RθJA 15.9°C/W System RθJA 19°C/W RθJA * power dissipation 85°C RθJA * power dissipation 85°C Junction temperature 85°C + 25°C = 110°C Junction temperature 85°C + 25°C = 110°C (1) This case represents a stereo system with only one package. See Case 2 and Case 2A if doing a full-power, 2-channel test in a multichannel system. (1) In this case, the power is also separated into two packages, but overdriving causes clipping to 10% THD. In this case, the high power requires extreme care in attachment of the heatsink to ensure that the thermal grease layer is ≤ 0.002 inches thick. Note that this power level should not be attempted with both channels in a single IC because of the high power density through the thermal grease layer. 17 TAS5112A www.ti.com SLES094B - OCTOBER 2003 - REVISED JUNE 2008 DCA THERMAL INFORMATION The thermally enhanced DCA package is based on the 56-pin HTSSOP, but includes a thermal pad (see Figure 14) to provide an effective thermal contact between the IC and the PCB. The PowerPAD™ package (thermally enhanced HTSSOP) combines fine-pitch, surface-mount technology with thermal performance comparable to much larger power packages. Thermal Pad 8,20 mm 7,20 mm The PowerPAD package is designed to optimize the heat transfer to the PWB. Because of the small size and limited mass of an HTSSOP package, thermal enhancement is achieved by improving the thermal conduction paths that remove heat from the component. The thermal pad is formed using a patented lead-frame design and manufacturing technique to provide a direct connection to the heat-generating IC. When this pad is soldered or otherwise thermally coupled to an external heat dissipater, high power dissipation in the ultrathin, fine-pitch, surface-mount package can be reliably achieved. Thermal Methodology for the DCA 56-Pin, 2y15-W, 8-W Package 3,90 mm 2,98 mm The thermal design for the DCA part (e.g., thermal pad soldered to the board) should be similar to the design in the following figures. The cooling approach is to conduct the dissipated heat into the via pads on the board, through the vias in the board, and into a heatsink (aluminum bar) (if necessary). Figure 14 shows a recommended land pattern on the PCB. 18 TAS5112A www.ti.com SLES094B - OCTOBER 2003 - REVISED JUNE 2008 Copper Layer − Component Side Solder PowerPAD TAS5112ACDA 5y11 Vias (f 0.3 mm) 4 mm 8 mm Figure 14. Recommended Land Pattern The lower via pad area, slightly larger than the IC pad itself, is exposed with a window in the solder resist on the bottom surface of the board. It is not coated with solder during the board construction to maintain a flat surface. In production, this can be accomplished with a peelable solder mask. An aluminum bar is used to keep the through-hole leads from shorting to the chassis. The thermal compound shown has a pad-to-aluminum bar thermal resistance of about 3.2°C/W. The chassis provides the only heatsink to air and is chosen as representative of a typical production cooling approach. 19 TAS5112A www.ti.com SLES094B - OCTOBER 2003 - REVISED JUNE 2008 Insulating Front Panel Stereo Amplifier Board Insulating Back Panel Plastic Top PCB (3.65C/W) 56-Pin DCA Package (1.145C/W) ÔÔÔ ÓÓÓÓÓÓÓÓÓÓÓÓÓÓÓÓÓÓÓÓ ÔÔÔ Wakefield Type 126 Thermal Compound Under Via Pads (3.2°C/W) 1 mm 8-mm y 10-mm y 40-mm Aluminum Bar (0.09°C/W) Wakefield Type 126 Thermal Compound (0.1°C/W) Aluminum Chassis 7.2 in. y 1 in. y 0.1 in. Thick Sides of U-Shaped Chassis Are 1.25 in. High (3.9°C/W) Figure 15. 56-Pin DCA Package Cross-Sectional View (Side) Plastic Top PCB (3.6°C/W) Stereo Amplifier Board 56-Pin DCA Package (1.14°C/W) (2 Places) 4-40 Machine Screw With Star Washer and Nut (3 Places) ÓÓÓÓÓÓÓÓÓÓÓÓÓÓÓÓÓÓÓÓ ÖÖÖ ÔÔÔ ÖÖ ÔÔ ÓÓÓÓÓÓÓÓÓÓÓÓÓÓÓÓÓÓÓÓ Wakefield Type 126 Thermal Compound (0.1°C/W) Aluminum Chassis 7.2 in. y 1 in. y 0.1 in. Thick Sides of U-Shaped Chassis Are 1.25 in. High (3.9°C/W) Wakefield Type 126 Thermal Compound Under Via Pads (3.2°C/W) 8-mm y 10-mm y 40-mm Aluminum Bar (0.09°C/W) Figure 16. Spatial Separation With Multiple Packages The land pattern recommendation shown in Figure 14 is for optimal performance with aluminum bar thermal resistance of 0.09°C/W. The following table shows the 20 decrease in thermal resistance through the PCB with a corresponding increase in the land pattern size. Use the table for thermal design tradeoffs. TAS5112A www.ti.com SLES094B - OCTOBER 2003 - REVISED JUNE 2008 LAND PATTERN PCB THERMAL RESISTANCE 7 × 13 vias (5 × 10 mm) 2.2°C/W 5 × 11 vias (4 × 8 mm) 3.6°C/W Thermal Pad To make this system work properly, the following design rules must be followed when using the TAS5112A back end: D The relative timing between the PWM_AP/M_x signals and their corresponding VALID_x signal should not be skewed by inserting delays, because this increases the audible amplitude level of the click. D The output stage must start switching from a fully discharged output filter capacitor. Because the output stage prior to operation is in the high-impedance state, this is done by having a passive pulldown resistor on each speaker output to GND (see System Configuration Used for Characterization). 8,20 mm 7,20 mm Other things that can affect the audible click level: 3,90 mm 2,98 mm Figure 17. Thermal Pad Dimensions for DCA Package D The spectrum of the click seems to follow the speaker impedance vs. frequency curve—the higher the impedance, the higher the click energy. D Crossover filters used between woofer and tweeter in a speaker can have high impedance in the audio band, which should be avoided if possible. Another way to look at it is that the speaker impulse response is a major contributor to how the click energy is shaped in the audio band and how audible the click will be. The following mode transitions feature click and pop reduction. STATE CLICK AND POP REDUCTION TI modulators feature a pop and click reduction system that controls the timing when switching starts and stops. Going from nonswitching to switching operation causes a spectral energy burst to occur within the audio bandwidth, which is heard in the speaker as an audible click, for instance, after having asserted RESET LH during a system start-up. Normal(1) → Mute CLICK AND POP REDUCED Yes Mute → Normal(1) Yes Normal(1) Error recovery → (ERRCVY) Yes Error recovery → Normal(1) Yes Normal(1) → Hard reset No Hard reset (1) → Normal(1) Yes Normal = switching 21 TAS5112A www.ti.com SLES094B - OCTOBER 2003 - REVISED JUNE 2008 REFERENCES 6. TAS5036A Six-Channel Digital Audio Processor data manual—TI (SLES061) PWM 1. TAS5000 Digital Audio PWM Processor data manual—TI (SLAS270) 7. TAS3103 Digital Audio Processor With 3D Effects data manual—TI (SLES038) 2. True Digital Audio Amplifier TAS5001 Digital Audio PWM Processor data sheet—TI (SLES009) 8. True Digital Audio Amplifier TAS5010 Digital Audio PWM Processor data sheet—TI (SLAS328) Digital Audio Measurements application report—TI (SLAA114) 9. PowerPAD™ Thermally Enhanced technical brief—TI (SLMA002) 3. 4. True Digital Audio Amplifier TAS5012 Digital Audio PWM Processor data sheet—TI (SLES006) 5. TAS5026 Six-Channel Digital Audio Processor data manual—TI (SLES041) 22 PWM Package 10. System Design Considerations for True Digital Audio Power Amplifiers application report—TI (SLAA117) PACKAGE OPTION ADDENDUM www.ti.com 10-Dec-2020 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) TAS5112ADCA ACTIVE HTSSOP DCA 56 35 RoHS & Green NIPDAU Level-3-260C-168 HR 0 to 70 TAS5112A TAS5112ADFD ACTIVE HTSSOP DFD 56 35 RoHS & Green NIPDAU Level-3-260C-168 HR 0 to 70 5112A TAS5112ADFDR ACTIVE HTSSOP DFD 56 2000 RoHS & Green NIPDAU Level-3-260C-168 HR 0 to 70 5112A (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of