TAS5122DFD

 www.ti.com SLES088E – AUGUST 2003 – REVISED DECEMBER 2004 TM  
 
    
 FEATURES APPLICATIONS D DVD Receiver D Home Theatre D Mini/Micro Component Systems D Internet Music Appliance DESCRIPTION D 2 × 30 W (BTL) Into 6 Ω at 1 kHz D 95-dB Dynamic Range (in System With TAS5026) D < 0.2% THD+N (in System – 30 W RMS Into The TAS5122 is a high-performance, integrated stereo digital amplifier power stage designed to drive 6-Ω speakers at up to 30 W per channel. The device incorporates TI’s PurePath Digitalt technology and is used with a digital audio PWM processor (TAS50XX) and a simple, passive demodulation filter to deliver high-quality, high-efficiency, true-digital audio amplification. 6-Ω Resistive Load) D Device Power Efficiency Typical >90% Into 6-Ω Load D Self-Protection Design (Including Undervoltage, Overtemperature, and Short Conditions) With Error Reports D Internal Gate Drive Supply Voltage Regulator D EMI Compliant When Used With Recommended System Design The efficiency of this digital amplifier is typically greater than 90%. Overcurrent protection, overtemperature protection, and undervoltage protection are built into the TAS5122, safeguarding the device and speakers against fault conditions that could damage the system. THD + NOISE vs OUTPUT POWER THD + NOISE vs FREQUENCY 1 THD+N − Total Harmonic Distortion + Noise − % THD+N − Total Harmonic Distortion + Noise − % 1 RL = 6 Ω TC = 75°C 0.1 0.01 40m 100m 1 10 40 PO − Output Power − W RL = 6 Ω TC = 75°C PO = 30 W 0.1 PO = 10 W PO = 1 W 0.01 20 100 1k 10k 20k f − Frequency − Hz Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PurePath Digital and PowerPAD are trademarks of Texas Instruments. Other trademarks are the property of their respective owners.  
  
  ! "#$ !  %#&'" ($) (#"! "  !%$""! %$ *$ $! 
$+! !#$! !(( ,-) (#" %"$!!. ($!  $"$!!'- "'#($ $!.  '' %$$!) Copyright  2004, Texas Instruments Incorporated 
 www.ti.com SLES088E – AUGUST 2003 – REVISED DECEMBER 2004 These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. GENERAL INFORMATION ABSOLUTE MAXIMUM RATINGS over operating free-air temperature range unless otherwise noted(1) Terminal Assignment TAS5122 The TAS5122 is offered in a thermally enhanced 56-pin DCA package (thermal pad is on the bottom). Output of the DCA package is highly dependent on thermal design. See the Thermal Information section. Therefore, it is important to design the heatsink carefully. UNITS DVDD to DGND –0.3 V to 4.2 V GVDD to GND 28 V PVDD_X to GND (dc voltage) 28 V OUT_X to GND (dc voltage) 28 V BST_X to GND (dc voltage) GREG to GND (2) 14.2 V 40 V PWM_XP, RESET, M1, M2, M3, SD, OTW DCA PACKAGE (TOP VIEW) GND GND GREG DVDD GND DGND GND PWM_AP PWM_AM RESET_AB PWM_BM PWM_BP DREG M1 M2 M3 DREG_RTN PWM_CP PWM_CM RESET_CD PWM_DM PWM_DP SD_AB SD_CD OTW GREG GND GND 2 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 GND GVDD BST_A PVDD_A PVDD_A OUT_A OUT_A GND GND OUT_B OUT_B PVDD_B PVDD_B BST_B BST_C PVDD_C PVDD_C OUT_C OUT_C GND GND OUT_D OUT_D PVDD_D PVDD_D BST_D GVDD GND –0.3 V to DVDD + 0.3 V Maximum operating junction temperature, TJ –40°C to 150°C Storage temperature –40°C to 125°C (1) Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. (2) GREG is treated as an input when the GREG pin is overdriven by GVDD of 12 V. ORDERING INFORMATION TA 0°C to 70°C PACKAGE DESCRIPTION TAS5122DCA 56-pin small TSSOP PACKAGE DISSIPATION RATINGS PACKAGE RθJC (°C/W) RθJA (°C/W) 56-pin DCA TSSOP 1.14 See Note 1 (1) The TAS5122 package is thermally enhanced for conductive cooling using an exposed metal pad area. It is impractical to use the device with the pad exposed to ambient air as the only heat sinking of the device. For this reason, RθJA, a system parameter that characterizes the thermal treatment, is provided in the Application Information section of the data sheet. An example and discussion of typical system RθJA values are provided in the Thermal Information section. This example provides additional information regarding the power dissipation ratings. This example should be used as a reference to calculate the heat dissipation ratings for a specific application. TI application engineering provides technical support to design heatsinks if needed. 
 www.ti.com SLES088E – AUGUST 2003 – REVISED DECEMBER 2004 Terminal Functions TERMINAL NAME NO. FUNCTION(1) DESCRIPTION BST_A 54 P HS bootstrap supply (BST), external capacitor to OUT_A required BST_B 43 P HS bootstrap supply (BST), external capacitor to OUT_B required BST_C 42 P HS bootstrap supply (BST), external capacitor to OUT_C required BST_D 31 P HS bootstrap supply (BST), external capacitor to OUT_D required DGND 6 P Digital I/O reference ground DREG 13 P Digital supply voltage regulator decoupling pin, capacitor connected to GND DREG_RTN 17 P Digital supply voltage regulator decoupling return pin DVDD 4 P I/O reference supply input (3.3 V) 1, 2, 5, P Power ground (I/O reference ground – pin 22) GND 7, 27, 28, 29, 36, 37, 48, 49, 56 GREG 3, 26 P Gate drive voltage regulator decoupling pin, capacitor to GND GVDD 30, 55 P Voltage supply to on−chip gate drive and digital supply voltage regulators M1 14 I Mode selection pin M2 15 I Mode selection pin M3 16 I Mode selection pin OTW 25 O Overtemperature warning output, open drain with internal pullup OUT_A 50, 51 O Output, half-bridge A OUT_B 46, 47 O Output, half-bridge B OUT_C 38, 39 O Output, half-bridge C OUT_D 34, 35 O Output, half-bridge D PVDD_A 52, 53 P Power supply input for half-bridge A PVDD_B 44, 45 P Power supply input for half-bridge B PVDD_C 40, 41 P Power supply input for half-bridge C PVDD_D 32, 33 P Power supply input for half-bridge D PWM_AM 9 I Input signal (negative), half-bridge A PWM_AP 8 I Input signal (positive), half-bridge A PWM_BM 11 I Input signal (negative), half-bridge B PWM_BP 12 I Input signal (positive), half-bridge B PWM_CM 19 I Input signal (negative), half-bridge C PWM_CP 18 I Input signal (positive), half-bridge C PWM_DM 21 I Input signal (negative), half-bridge D PWM_DP 22 I Input signal (positive), half-bridge D RESET_AB 10 I Reset signal, active low RESET_CD 20 I Reset signal, active low SD_AB 23 O Shutdown signal for half-bridges A and B O Shutdown signal for half-bridges C and D 24 SD_CD (1) I = input, O = output, P = power 3 
 www.ti.com SLES088E – AUGUST 2003 – REVISED DECEMBER 2004 FUNCTIONAL BLOCK DIAGRAM BST_A GREG PVDD_A Gate Drive PWM_AP PWM Receiver OUT_A Timing Control Gate Drive GND Protection A BST_B RESET GREG PVDD_B Protection B Gate Drive PWM_BP PWM Receiver OUT_B Timing Control Gate Drive GND To Protection Blocks DREG GVDD OTW SD GREG OT GREG Protection DREG GREG UVP DREG_RTN DREG_RTN BST_C GREG PVDD_C Gate Drive PWM_CP PWM Receiver OUT_C Timing Control Gate Drive GND Protection C BST_D RESET GREG PVDD_D Protection D Gate Drive PWM_DP PWM Receiver OUT_D Timing Control Gate Drive GND 4 
 www.ti.com SLES088E – AUGUST 2003 – REVISED DECEMBER 2004 RECOMMENDED OPERATING CONDITIONS DVDD Digital supply (1) GVDD Supply for internal gate drive and logic regulators PVDD_x Half-bridge supply MIN TYP MAX UNIT Relative to DGND 3 3.3 3.6 V Relative to GND 16 23 25.5 V Relative to GND, RL= 6 Ω to 8 Ω 0 23 25.5 V 125 _C TJ Junction temperature (1) It is recommended for DVDD to be connected to DREG via a 100-Ω resistor. 0 ELECTRICAL CHARACTERISTICS PVDD_X = 23 V, GVDD = 23 V, DVDD = 3.3 V, DVDD connected to DREG via a 100-Ω resistor, RL = 6 Ω, 8X fs = 384 kHz, unless otherwise noted. AC performance is recorded as a chipset with TAS5010 as the PWM processor and TAS5122 as the power stage. SYMBOL PARAMETER TCase= 75°C UNITS MIN/TYP/ MAX RL = 8 Ω, unclipped, AES17 filter 24 W Typ RL = 8 Ω, THD = 10%, AES17 filter 29 W Typ RL = 6 Ω, THD = 0.4%, AES17 filter 30 W Typ RL = 6 Ω, THD = 10%, AES17 filter 37 W Typ TEST CONDITIONS TYPICAL TA=25°C TA=25°C AC PERFORMANCE, BTL MODE, 1 kHz PO THD+N Output power Total harmonic distortion + noise Vn Output RMS noise SNR Signal-to-noise ratio DR Dynamic range Po = 1 W/ channel, RL = 6 Ω, AES17 filter 0.05% Typ Po = 10 W/channel, RL = 6 Ω, AES17 filter 0.05% Typ Po = 30 W/channel, RL = 6 Ω, AES17 filter 0.2% Typ A-weighted, mute, RL = 6 Ω, 20 Hz to 20 kHz, AES17 filter 240 µV Max 95 dB Typ 95 dB Typ f = 1 kHz, A-weighted, RL = 6 Ω,, AES17 filter f = 1 kHz, A-weighted, RL = 6 Ω,, AES17 filter INTERNAL VOLTAGE REGULATOR DREG Voltage regulator Io = 1 mA, PVDD = 18 V−30.5 V 3.1 V Typ GREG Voltage regulator Io = 1.2 mA, PVDD = 18 V−30.5 V 13.4 V Typ IGVDD GVDD supply current, operating fS = 384 kHz, no load, 50% duty cycle 24 (1) mA Max IDVDD DVDD supply current, operating fS = 384 kHz, no load 5 mA Max 155 mΩ Max 155 mΩ Max 1 OUTPUT STAGE MOSFETs RDSon,LS Forward on-resistance, LS TJ = 25°C RDSon,HS Forward on-resistance, HS TJ = 25°C (1) Measured with TI standard manufacturing hardware configuration 5 
 www.ti.com SLES088E – AUGUST 2003 – REVISED DECEMBER 2004 ELECTRICAL CHARACTERISTICS PVDD_x = 23 V, GVDD = 23 V, DVDD = 3.3 V, RL = 6 Ω, 8X fs = 384 kHz, unless otherwise noted SYMBOL PARAMETER TEST CONDITIONS TYPICAL TA=25°C TA=25°C TCase= 75°C UNITS MIN/TYP/ MAX INPUT/OUTPUT PROTECTION Vuvp,G Undervoltage protection limit, GVDD 7.4 OTW Overtemperature warning 125 OTE Overtemperature error 150 OC Overcurrent protection 6.9 V Min 7.9 V Max °C Typ °C Typ 5.0 A Min 2 V Min DVDD V Max Max STATIC DIGITAL SPECIFICATION PWM_AP, PWM_BP, M1, M2, M3, SD, OTW VIH High-level input voltage VIL Low-level input voltage Leakage Input leakage current 0.8 V −10 µA Min 10 µA Max 22.5 kΩ Min 0.4 V Max OTW/SHUTDOWN (SD) Internally pullup R from OTW/SD to DVDD VOL 6 Low-level output voltage 30 IO = 4 mA 
 www.ti.com SLES088E – AUGUST 2003 – REVISED DECEMBER 2004 SYSTEM CONFIGURATION USED FOR CHARACTERIZATION (BTL) Gate-Drive Power Supply External Power Supply H-Bridge Power Supply TAS5122 1 1 µF 56 GND GND 2 55 GND GVDD 3 GREG 4 53 OTW PVDD_D SD_CD PVDD_D SD_AB OUT_D PWM_DP OUT_D 5 6 ERR_RCVY 49 PWM_DM 11 12 100 nF PWM PROCESSOR TAS50xx 13 14 PWM_CM PWM_CP GND PWM_AP_2 DREG_RTN PVDD_C M3 PVDD_C M2 BST_C M1 BST_B PWM_BP PVDD_B PWM_BM OUT_B RESET_AB OUT_B PWM_AM GND PWM_AP GND LPCB(2) 1000 µF 42 1.5 Ω × 2 33 nF LPCB(2) 100 nF 37 (1) 10 µH 1.5 Ω 4.7 kΩ 470 nF 100 nF 36 GND DGND 35 1.5 Ω 34 (1) OUT_A OUT_A DVDD PVDD_A 31 GREG 100 nF 4.7 kΩ PVDD_A 32 25 10 µH 100 nF 33 24 BST_A 27 28 33 nF 43 38 GND 1 µF 44 39 23 26 100 nF 4.7 kΩ 40 21 100 nF 10 µH 100 nF PVDD_B 20 22 (1) 41 DREG 19 100 Ω 1.5 Ω 46 45 18 VALID_2 47 OUT_C 17 PWM_AM_2 4.7 kΩ 470 nF 100 nF OUT_C 15 16 (1) 10 µH 1.5 Ω 48 RESET_CD 10 100 nF GND 9 VALID_1 LPCB(2) 52 50 8 PWM_AM_1 100 nF 33 nF 51 7 PWM_AP_1 54 1.5 Ω BST_D GND GVDD GND GND 33 nF LPCB(2) 1000 µF 30 1.5 Ω 29 100 nF (1) Voltage Clamp 30 V, PN SMAJ28A, MFG MICROSEMI (2) LPCB: Track in the PCB (1 mm wide and 50 mm long) 7 
 www.ti.com From PWM Processor SLES088E – AUGUST 2003 – REVISED DECEMBER 2004 Figure 1. Typical Single-Ended Design With TAS5122 DCA 8 
 www.ti.com SLES088E – AUGUST 2003 – REVISED DECEMBER 2004 TYPICAL CHARACTERISTICS TOTAL HARMONIC DISTORTION + NOISE vs OUTPUT POWER TOTAL HARMONIC DISTORTION + NOISE vs FREQUENCY 1 THD+N − Total Harmonic Distortion + Noise − % THD+N − Total Harmonic Distortion + Noise − % 10 RL = 6 Ω TC = 75°C TAS5122SE 1 0.1 TAS5122BTL 0.01 500m 1 10 RL = 6 Ω TC = 75°C PO = 30 W 0.1 PO = 10 W PO = 1 W 0.01 20 50 100 PO − Output Power − W Figure 2 10k 20k Figure 3 TOTAL HARMONIC DISTORTION + NOISE vs OUTPUT POWER −60 dBFS FFT 1 THD+N − Total Harmonic Distortion + Noise − % 0 RL = 6 Ω FFT = −60 dB TC = 75°C TAS5010 PWM Processor Device −20 Noise Amplitude − dBr 1k f − Frequency − Hz −40 −60 −80 −100 −120 −140 0 2 4 6 8 10 12 14 f − Frequency − kHz Figure 4 16 18 20 22 RL = 6 Ω TC = 75°C 0.1 0.01 40m 100m 1 10 40 PO − Output Power − W Figure 5 9 
 www.ti.com SLES088E – AUGUST 2003 – REVISED DECEMBER 2004 OUTPUT POWER vs H-BRIDGE VOLTAGE SYSTEM OUTPUT STAGE EFFICIENCY vs OUTPUT POWER 55 100 50 η − System Output Stage Efficiency − % TC = 75°C PO − Output Power − W 45 40 35 30 25 RL = 6 Ω 20 15 RL = 8 Ω 10 5 0 90 80 70 60 50 40 30 20 f = 1 kHz RL = 6 Ω TC = 75°C 10 0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 0 5 10 VDD − Supply Voltage − V Figure 6 20 25 30 Figure 7 POWER LOSS vs OUTPUT POWER OUTPUT POWER vs CASE TEMPERATURE 5 40 f = 1 kHz RL = 6 Ω TC = 75°C 38 PVDD = 23 V RL = 6 Ω 36 PO − Output Power − W 4 Ptot − Power Loss − W 15 PO − Output Power − W 3 2 1 34 32 Channel 2 Channel 1 30 28 26 24 22 0 20 0 5 10 15 20 PO − Output Power − W Figure 8 10 25 30 0 10 20 30 40 50 60 70 80 90 100 110 120 130 TC − Case Temperature − °C Figure 9 
 www.ti.com SLES088E – AUGUST 2003 – REVISED DECEMBER 2004 AMPLITUDE vs FREQUENCY ON-STATE RESISTANCE vs JUNCTION TEMPERATURE 3.0 200 2.5 190 Amplitude − dBr 1.5 ron − On-State Resistance − mΩ 2.0 RL = 8 Ω 1.0 RL = 6 Ω 0.5 0.0 −0.5 −1.0 −1.5 −2.0 180 170 160 150 140 130 −2.5 −3.0 10 120 100 1k f − Frequency − Hz Figure 10 10k 50k 0 10 20 30 40 50 60 70 80 90 100 TJ − Junction Temperature − °C Figure 11 11 
 www.ti.com SLES088E – AUGUST 2003 – REVISED DECEMBER 2004 THEORY OF OPERATION POWER SUPPLIES The power device only requires two supply voltages, GVDD and PVDD_x. GVDD is the gate drive supply for the device, regulated internally down to approximately 12 V, and decoupled with regards to board GND on the GREG pins through an external capacitor. GREG powers both the low side and high side via a bootstrap step-up conversion. The bootstrap supply is charged after the first low-side turnon pulse. Internal digital core voltage DREG is also derived from GVDD and regulated down by internal low-dropout regulators (LDRs) to 3.3 V. The gate-driver LDR can be bypassed for reducing idle loss in the device by shorting GREG to GVDD and directly feeding in 12 V. This can be useful in an application where thermal conduction of heat from the device is difficult. Bypassing the LDR reduces power dissipation. PVDD_x is the H-bridge power supply pin. Two power pins exist for each half-bridge to handle the current density. It is important that the circuitry recommendations concerning the PVDD_x pins are followed carefully both topologyand layout-wise. For topology recommendations, see the System Configuration Used for Characterization section. Following these recommendations is important for parameters like EMI, reliability, and performance. SYSTEM POWER-UP/POWER-DOWN SEQUENCE Powering Up > 1 ms > 1 ms RESET not charged. To comply with the click and pop scheme and use of non-TI PWM processors, it is recommended to use a 4-kΩ pulldown resistor on each PWM output node to ground. This precharges the bootstrap supply capacitors and discharges the output filter capacitor (see the System Configuration Used for Characterization section). After GVDD has been applied, it takes approximately 800 µs to fully charge the BST capacitor. Within this time, RESET must be kept low. After approximately 1 ms, the power stage bootstrap capacitor is charged. RESET can now be released if the modulator is powered up and streaming PWM signals to the power stage PWM_xP. A constant HIGH dc level on PWM_xP is not permitted, because it would force the high-side MOSFET ON until it eventually ran out of BST capacitor energy and might damage the device. An unknown state of the PWM output signals from the processor is illegal and should be avoided, which in practice means that the PWM processor must be powered up and initialized before RESET is deasserted HIGH to the power stage. Powering Down For powering down the power stage, an opposite approach is necessary. RESET must be asserted LOW before the valid PWM signal is removed. When TI PWM processors are used with TI power stages, the correct timing control of RESET and PWM_xP is performed by the modulator. Precaution The TAS5122 must always start up in the high-impedance (Hi-Z) state. In this state, the bootstrap (BST) capacitor is precharged by a resistor on each PWM output node to ground. See System Configuration Used for Characterization. This ensures that the power stage is ready for receiving PWM pulses, indicating either HIGHor LOW-side turnon after RESET is deasserted to the power stage. With the following pulldown and BST capacitor size, the charge time is: GVDD(1) PVDD_x(1) PWM_xP (1) PVDD should not be powered up before GVDD. During power up when RESET is asserted LOW, all MOSFETs are turned off and the two internal half-bridges are in the high-impedance state (Hi-Z). The bootstrap capacitors supplying high-side gate drive are at this point 12 C = 33 nF, R = 4.7 kΩ R × C × 5 = 775.5 µs After GVDD has been applied, it takes approximately 800 µs to fully charge the BST capacitor. During this time, RESET must be kept low. After approximately 1 ms, the power stage BST is charged and ready. RESET can now be released if the PWM modulator is ready and is streaming valid PWM signals to the power stage. Valid PWM signals are switching PWM signals with a frequency between 350−400 kHz. A constant HIGH level on the PWM_xP forces the high-side MOSFET ON until it eventually runs out of BST capacitor energy. Putting the device in this condition should be avoided. 
 www.ti.com SLES088E – AUGUST 2003 – REVISED DECEMBER 2004 In practice this means that the DVDD-to-PWM processor should be stable and initialization should be completed before RESET is deasserted to the power stage. CONTROL I/O Shutdown Pin: SD The SD pin functions as an output pin and is intended for protection-mode signaling to, for example, a controller or other PWM processor device. The pin is open-drain with an internal pullup to DVDD. The logic output is, as shown in the following table, a combination of the device state and RESET input: SD RESET 0 0 Not used DESCRIPTION 0 1 Device in protection mode, i.e., UVP and/or OC and/or OT error 1(2) 0 Device set high-impedance (Hi-Z), SD forced high 1 1 Overcurrent (OC) Protection The device has individual forward current protection on both high-side and low-side power stage FETs. The OC protection works only with the demodulation filter present at the output. See Demodulation Filter Design in the Application Information section of this data sheet for design constraints. Overtemperature (OT) Protection A dual temperature protection system asserts a warning signal when the device junction temperature exceeds 125°C. The OT protection circuit is shared by all half-bridges. Undervoltage (UV) Protection Normal operation (2) SD is pulled high when RESET is asserted low independent of chip state (i.e., protection mode). This is desirable to maintain compatibility with some TI PWM processors. Temperature Warning Pin: OTW The OTW pin gives a temperature warning signal when temperature exceeds the set limit. The pin is of the open-drain type with an internal pullup to DVDD. OTW The device can be recovered by toggling RESET low and then high, after all errors are cleared. DESCRIPTION 0 Junction temperature higher than 125°C 1 Junction temperature lower than 125°C Undervoltage lockout occurs when GVDD is insufficient for proper device operation. The UV protection system protects the device under power-up and power-down situations. The UV protection circuits are shared by all half-bridges. Reset Functions The functions of the reset input are: D Reset is used for reenabling operation after a latching error event (PMODE1). D Reset is used for disabling output stage switching (mute function). The error latch is cleared on the falling edge of reset and normal operation is resumed when reset goes high. Overall Reporting The SD pin, together with the OTW pin, gives chip state information as described in Table 1. Table 1. Error Signal Decoding OTW SD DESCRIPTION 0 0 Overtemperature error (OTE) 0 1 Overtemperature warning (OTW) 1 0 Overcurrent (OC) or undervoltage (UVP) error 1 1 Normal operation, no errors/warnings Chip Protection The TAS5122 protection function is implemented in a closed loop with, for example, a system controller or other TI PWM processor device. The TAS5122 contains three individual systems protecting the device against fault conditions. All of the error events covered result in the output stage being set in a high-impedance state (Hi-Z) for maximum protection of the device and connected equipment. PROTECTION MODE Autorecovery (AR) After Errors (PMODE0) In autorecovery mode (PMODE0), the TAS5122 is self-supported in handling of error situations. All protection systems are active, setting the output stage in the high-impedance state to protect the output stage and connected equipment. However, after a short time the device auto-recovers, i.e., operation is automatically resumed provided that the system is fully operational. The autorecovery timing is set by counting PWM input cycles, i.e., the timing is relative to the switching frequency. The AR system is common to both half-bridges. Timing and Function The function of the autorecovery circuit is as follows: 1. An error event occurs and sets the protection latch (output stage goes Hi-Z). 2. The counter is started. 13 
 www.ti.com SLES088E – AUGUST 2003 – REVISED DECEMBER 2004 3. After n/2 cycles, the protection latch is cleared but the output stage remains Hi-Z (identical to pulling RESET low). 4. After n cycles, operation is resumed (identical to pulling RESET high) (n = 512). Error Protection Latch Shutdown APPLICATION INFORMATION DEMODULATION FILTER DESIGN AND SPIKE CONSIDERATIONS The output square wave is susceptible to overshoots (voltage spikes). The spike characteristics depend on many elements, including silicon design and application design and layout. The device should be able to handle narrow spike pulses, less than 65 ns, up to 65 volts peak. For more detailed information, see TI application report SLEA025. The PurePath Digital amplifier outputs are driven by heavy-duty DMOS transistors in an H-bridge configuration. These transistors are either off or fully on, which reduces the DMOS transistor on-state resistance, RDSon, and the power dissipated in the device, thereby increasing efficiency. SD Autorecovery PWM Counter AR-RESET Figure 12. Autorecovery Function Latching Shutdown on All Errors (PMODE1) In latching shutdown mode, all error situations result in a permanent shutdown (output stage Hi-Z). Reenabling can be done by toggling the RESET pin. The result is a square-wave output signal with a duty cycle that is proportional to the amplitude of the audio signal. It is recommended that a second-order LC filter be used to recover the audio signal. For this application, EMI is considered important; therefore, the selected filter is the full-output type shown in Figure 13. TAS51xx Output A L R(Load) C1A All Protection Systems Disabled (PMODE2) In PMODE2, all protection systems are disabled. This mode is purely intended for testing and characterization purposes and thus not recommended for normal device operation. C2 C1B Output B L MODE Pins Selection The protection mode is selected by shorting M1/M2 to DREG or DGND according to Table 2. Table 2. Protection Mode Selection M1 M2 0 0 Reserved PROTECTION MODE 0 1 Latching shutdown on all errors (PMODE1) 1 0 Reserved 1 1 Reserved The output configuration mode is selected by shorting the M3 pin to DREG or DGND according to Table 3. Table 3. Output Mode Selection M3 14 OUTPUT MODE 0 Bridge-tied load output stage (BTL) 1 Reserved Figure 13. Demodulation Filter (AD Mode) The main purpose of the output filter is to attenuate the high-frequency switching component of the PurePath Digital amplifier while preserving the signals in the audio band. Design of the demodulation filter affects the performance of the power amplifier significantly. As a result, to ensure proper operation of the overcurrent (OC) protection circuit and meet the device THD+N specifications, the selection of the inductors used in the output filter must be considered according to the following. The rule is that the inductance should remain stable within the range of peak current seen at maximum output power and deliver at least 5 µH of inductance at 15 A. If this rule is observed, the TAS5122 does not have distortion issues due to the output inductors, and overcurrent conditions do not occur due to inductor saturation in the output filter. 
 www.ti.com SLES088E – AUGUST 2003 – REVISED DECEMBER 2004 Another parameter to be considered is the idle current loss in the inductor. This can be measured or specified as inductor dissipation (D). The target specification for dissipation is less than 0.05. In general, 10-µH inductors suffice for most applications. The frequency response of the amplifier is slightly altered by the change in output load resistance; however, unless tight control of frequency response is necessary (better than 0.5 dB), it is not necessary to deviate from 10 µH. The graph in Figure 14 displays the inductance vs current characteristics of two inductors that are recommended for use with the TAS5122. INDUCTANCE vs CURRENT THERMAL INFORMATION RθJA is a system thermal resistance from junction to ambient air. As such, it is a system parameter with roughly the following components: D RθJC (the thermal resistance from junction to case, or in this case the metal pad) D D Thermal grease thermal resistance Heatsink thermal resistance RθJC has been provided in the Package Dissipation Ratings section. The thermal grease thermal resistance can be calculated from the exposed pad area and the thermal grease manufacturer’s area thermal resistance (expressed in °C-in2/W). The area thermal resistance of the example thermal grease with a 0.002-inch-thick layer is about 0.1 °C-in2/W. The approximate exposed pad area is as follows: 56-pin HTSSOP 11 DFB1310A 0.045 in2 Dividing the example thermal grease area resistance by the surface area gives the actual resistance through the thermal grease for both ICs inside the package: 10 L - Inductance - µH 9 56-pin HTSSOP DASL983XX-1023 8 2.27 °C/W The thermal resistance of thermal pads is generally considerably higher than a thin thermal grease layer. Thermal tape has an even higher thermal resistance. Neither pads nor tape should be used with either of these two packages. A thin layer of thermal grease with careful clamping of the heatsink is recommended. It may be difficult to achieve a layer 0.001 inch thick or less, so the modeling below is done with a 0.002-inch-thick layer, which may be more representative of production thermal grease thickness. 7 6 5 4 0 5 10 15 I - Current - A Figure 14. Inductance Saturation Heatsink thermal resistance is generally predicted by the heatsink vendor, modeled using a continuous flow dynamics (CFD) model, or measured. Thus, for a single monaural IC, the system RθJA = RθJC + thermal grease resistance + heatsink resistance. The selection of the capacitor that is placed across the output of each inductor (C2 in Figure 13) is simple. To complete the output filter, use a 0.47-µF capacitor with a voltage rating at least twice the voltage applied to the output stage (PVDD). DCA THERMAL INFORMATION This capacitor should be a good quality polyester dielectric such as a Wima MKS2-047ufd/100/10 or equivalent. The PowerPAD package (thermally enhanced HTSSOP) combines fine-pitch, surface-mount technology with thermal performance comparable to much larger power packages. In order to minimize the EMI effect of unbalanced ripple loss in the inductors, 0.1-µF, 50-V, SMD capacitors (X7R or better) (C1A and C1B in Figure 13) should be added from the output of each inductor to ground. The thermally enhanced DCA package is based on the 56-pin HTSSOP, but includes a thermal pad (see Figure 15) to provide an effective thermal contact between the IC and the PCB. The PowerPAD package is designed to optimize the heat transfer to the PWB. Because of the small size and limited mass of an HTSSOP package, thermal enhancement is 15 
 www.ti.com SLES088E – AUGUST 2003 – REVISED DECEMBER 2004 achieved by improving the thermal conduction paths that remove heat from the component. The thermal pad is formed using a patented lead-frame design and manufacturing technique to provide a direct connection to the heat-generating IC. When this pad is soldered or otherwise thermally coupled to an external heat dissipater, high power dissipation in the ultrathin, fine-pitch, surface-mount package can be reliably achieved. soldered to the board) should be similar to the design in the following figures. The cooling approach is to conduct the dissipated heat into the via pads on the board, through the vias in the board, and into a heatsink (aluminum bar) (if necessary). Figure 15 shows a recommended land pattern on the PCB. Thermal Methodology for the DCA 56-Pin, 2y15-W, 8-W Package The thermal design for the DCA part (e.g., thermal pad Copper Layer − Component Side Solder PowerPAD TAS5122DCA 5y11 Vias (f 0.3 mm) 4 mm 8 mm Figure 15. Recommended Land Pattern The lower via pad area, slightly larger than the IC pad itself, is exposed with a window in the solder resist on the bottom surface of the board. It is not coated with solder during the board construction to maintain a flat surface. In production, this can be accomplished with a peelable solder mask. An aluminum bar is used to keep the through-hole leads 16 from shorting to the chassis. The thermal compound shown has a pad-to-aluminum bar thermal resistance of about 3.2°C/W. The chassis provides the only heatsink to air and is chosen as representative of a typical production cooling approach. 
 www.ti.com SLES088E – AUGUST 2003 – REVISED DECEMBER 2004 Insulating Front Panel Stereo Amplifier Board Insulating Back Panel Plastic Top PCB (3.65C/W) 56-Pin DCA Package (1.145C/W) ÔÔ ÓÓÓÓÓÓÓÓÓÓÓÓÓÓÓÓÓÓÓÓÓ ÔÔ Wakefield Type 126 Thermal Compound Under Via Pads (3.2°C/W) 1 mm 8-mm y 10-mm y 40-mm Aluminum Bar (0.09°C/W) Wakefield Type 126 Thermal Compound (0.1°C/W) Aluminum Chassis 7.2 in. y 1 in. y 0.1 in. Thick Sides of U-Shaped Chassis Are 1.25 in. High (3.9°C/W) Figure 16. 56-Pin DCA Package Cross-Sectional View (Side) Plastic Top PCB (3.6°C/W) Stereo Amplifier Board 56-Pin DCA Package (1.14°C/W) (2 Places) 4-40 Machine Screw With Star Washer and Nut (3 Places) ÔÔ ÔÔ ÓÓÓÓÓÓÓÓÓÓÓÓÓÓÓÓÓÓÓÓ ÖÖ ÖÖ ÔÔ ÔÔ Wakefield Type 126 Thermal Compound (0.1°C/W) Aluminum Chassis 7.2 in. y. 1 in y 0.1 in. Thick Sides of U-Shaped Chassis Are 1.25 in. High (3.9°C/W) Wakefield Type 126 Thermal Compound Under Via Pads (3.2°C/W) 8-mm y 10-mm y 40-mm Aluminum Bar (0.09°C/W) Figure 17. Spatial Separation With Multiple Packages The land pattern recommendation shown in Figure 15 is for optimal performance with aluminum bar thermal resistance of 0.09°C/W. The following table shows the decrease in thermal resistance through the PCB with a corresponding increase in the land pattern size. Use the table for thermal design tradeoffs. 17 
 www.ti.com SLES088E – AUGUST 2003 – REVISED DECEMBER 2004 LAND PATTERN the output stage prior to operation is in the high-impedance state, this is done by having a passive pulldown resistor on each speaker output to GND (see System Configuration Used for Characterization). PCB THERMAL RESISTANCE 7×13 vias (5×10 mm) 2.2°C/W 5×11 vias (4×8 mm) 3.6°C/W Other things that can affect the audible click level: Thermal Pad 8,20 mm 7,20 mm D The spectrum of the click seems to follow the speaker impedance vs frequency curve—the higher the impedance, the higher the click energy. D Crossover filters used between woofer and tweeter in a speaker can have high impedance in the audio band, which should be avoided if possible. Another way to look at it is that the speaker impulse response is a major contributor to how the click energy is shaped in the audio band and how audible the click is. The following mode transitions feature click and pop reduction in Texas Instruments PWM processors. STATE 3,90 mm 2,98 mm Normal(1) → Mute Yes Mute → Normal(1) Yes Normal(1) Error recovery → (ERRCVY) Yes Error recovery Normal(1) → Normal(1) Yes → Hard reset → Normal(1) Yes Hard reset (1) Normal = switching Figure 18. Thermal Pad Dimensions for DCA Package CLICK AND POP REDUCED No REFERENCES 1. TAS5000 Digital Audio PWM Processor data manual (SLAS270) TI modulators feature a pop and click reduction system that controls the timing when switching starts and stops. 2. True Digital Audio Amplifier TAS5001 Digital Audio PWM Processor data sheet (SLES009) Going from nonswitching to switching operation causes a spectral energy burst to occur within the audio bandwidth, which is heard in the speaker as an audible click, for instance, after having asserted RESET LH during a system start-up. 3. True Digital Audio Amplifier TAS5010 Digital Audio PWM Processor data sheet (SLAS328) 4. True Digital Audio Amplifier TAS5012 Digital Audio PWM Processor data sheet (SLES006) 5. TAS5026 Six-Channel Digital Audio Processor data manual (SLES041) PWM 6. TAS5036A Six-Channel Digital Audio Processor data manual (SLES061) PWM 7. TAS3103 Digital Audio Processor With 3D Effects data manual (SLES038) 8. Digital Audio Measurements application report (SLAA114) 9. System Design Considerations for True Digital Audio Power Amplifiers application report (SLAA117) CLICK AND POP REDUCTION To make this system work properly, the following design rules must be followed when using the TAS5122 power stage: D D 18 The relative timing between the PWM_AP/M_x signals and their corresponding VALID_x signal should not be skewed by inserting delays, because this increases the audible amplitude level of the click. The output stage must start switching from a fully discharged output filter capacitor. Because PACKAGE OPTION ADDENDUM www.ti.com 13-Jul-2022 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) Samples (4/5) (6) TAS5122DCA ACTIVE HTSSOP DCA 56 35 RoHS & Green NIPDAU Level-3-260C-168 HR 0 to 70 TAS5122 Samples TAS5122DCAR ACTIVE HTSSOP DCA 56 2000 RoHS & Green NIPDAU Level-3-260C-168 HR 0 to 70 TAS5122 Samples (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of