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TAS5414C
SLOS955 – DECEMBER 2016
TAS5414C Four-Channel Aftermarket Automotive Class-D Amplifier
1 Features
3 Description
•
The TAS5414C is a four-channel Class-D audio
amplifier designed for use in automotive head units
and external amplifier modules. It provides four
channels at 23 W continuously into 4 Ω at less than
1% THD+N from a 14.4-V supply. Each channel can
also deliver 38 W into 2 Ω at 1% THD+N. The
TAS5414C uses single-ended analog inputs. The
class-D PWM topology of the device provides
dramatic improvements in efficiency over traditional
linear amplifier solutions. This reduces the power
dissipated by the amplifier by a factor of ten under
typical music playback conditions. The device has a
built-in load diagnostic functions for detecting and
diagnosing misconnected outputs to help to reduce
test time during the manufacturing process.
•
•
•
•
•
•
•
•
•
•
•
•
•
Four-Channel Single-Ended Analog Input Class-D
Audio Amplifier
Typical Output Power at 10% THD+N
– 28 W/Ch Into 4 Ω at 14.4 V
– 50 W/Ch Into 2 Ω at 14.4 V
– 79 W/Ch Into 4 Ω at 24 V
– 150 W/Ch Into 2 Ω at 24 V (PBTL)
Channels Can Be Paralleled (PBTL) for HighCurrent Applications
THD+N < 0.02%, 1 kHz, 1 W Into 4 Ω
Patented Pop- and Click-Reduction Technology
– Soft Muting With Gain Ramp Control
– Common-Mode Ramping
Patented AM Interference Avoidance
Patented Cycle-by-Cycle Current Limit
75-dB PSRR
Four-Address I2C Serial Interface for Device
Configuration and Control
Channel Gains: 12-dB, 20-dB, 26-dB, 32-dB
Load Diagnostic Functions:
– Output Open and Shorted Load
– Output-to-Power and -to-Ground Shorts
– Patented Tweeter Detection
Protection and Monitoring Functions:
– Short-Circuit Protection
– Load-Dump Protection to 50 V
– Fortuitous Open-Ground and -Power Tolerant
– Patented Output DC Level Detection While
Music Playing
– Overtemperature Protection
– Over- and Undervoltage Conditions
– Clip Detection
64-Pin QFP (PHD) Power Package With Heat
Slug Up
–20°C to 105°C Ambient Temperature Range
Device Information(1)
PART NUMBER
TAS5414C
PACKAGE
HTQFP (64)
BODY SIZE (NOM)
14.00 mm × 14.00 mm
(1) For all available packages, see the orderable addendum at
the end of the datasheet.
Efficiency vs Power Per Channel
100
90
80
70
Efficiency − %
1
60
50
40
30
20
10
0
0
4
8
12
16
20
24
28
32
P − Power Per Channel − W
G007
2 Applications
•
•
Aftermarket Headunit
Aftermarket External Audio Amplifier
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TAS5414C
SLOS955 – DECEMBER 2016
www.ti.com
Table of Contents
1
2
3
4
5
6
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
6.1
6.2
6.3
6.4
6.5
6.6
6.7
7
1
1
1
2
3
5
8
8.1 Application Information............................................ 34
8.2 Typical Application .................................................. 34
9 Power Supply Recommendations...................... 37
10 Layout................................................................... 38
10.1
10.2
10.3
10.4
Layout Guidelines .................................................
Layout Example ....................................................
Thermal Consideration..........................................
Electrical Connection of Heat Slug and Heat
Sink ..........................................................................
10.5 EMI Considerations...............................................
Absolute Maximum Ratings ...................................... 5
ESD Ratings ............................................................ 5
Recommended Operating Conditions ...................... 5
Thermal Information .................................................. 6
Electrical Characteristics........................................... 6
Timing Requirements for I2C Interface Signals....... 10
Typical Characteristics ............................................ 11
Overview .................................................................
Functional Block Diagram .......................................
Feature Descption...................................................
Device Functional Modes........................................
Programming...........................................................
Register Maps .........................................................
38
38
41
41
41
11 Device and Documentation Support ................. 43
11.1
11.2
11.3
11.4
11.5
11.6
Detailed Description ............................................ 13
7.1
7.2
7.3
7.4
7.5
7.6
Application and Implementation ........................ 34
13
13
14
20
24
26
Device Support ....................................................
Documentation Support .......................................
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
43
43
43
43
43
43
12 Mechanical, Packaging, and Orderable
Information ........................................................... 44
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
2
DATE
REVISION
NOTES
December 2016
*
Initial release.
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5 Pin Configuration and Functions
The pin assignments are shown as follows.
PHD Package
64-Pin HTQFP
Top View
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Pin Functions
PIN
TAS5414C
PHD Package
NO.
TYPE (1)
A_BYP
11
PBY
Bypass pin for the AVDD analog regulator
CLIP_OTW
6
DO
Reports CLIP, OTW, or both. It also reports tweeter detection during
tweeter mode. Open-drain
CP
41
CP
Top of main storage capacitor for charge pump (bottom goes to PVDD)
CPC_BOT
40
CP
Bottom of flying capacitor for charge pump
CPC_TOP
42
CP
Top of flying capacitor for charge pump
D_BYP
5
PBY
Bypass pin for DVDD regulator output
FAULT
1
DO
Global fault output (open drain): UV, OV, OTSD, OCSD, DC
3, 7, 8, 9, 12, 14, 16, 17,
21, 22, 23, 24, 25, 26, 30,
31, 32, 35, 38, 39, 43, 46,
49, 50, 51, 55, 56, 57, 58,
59, 60
GND
I2C_ADDR
62
AI
I2C address bit
IN1_P
13
AI
Non-inverting analog input for channel 1
IN2_P
15
AI
Non-inverting analog input for channel 2
IN3_P
19
AI
Non-inverting analog input for channel 3
IN4_P
20
AI
Non-inverting analog input for channel 4
IN_M
18
ARTN
MUTE
2
AI
OSC_SYNC
61
DI/DO
OUT1_M
48
PO
– polarity output for bridge 1
OUT1_P
47
PO
+ polarity output for bridge 1
OUT2_M
45
PO
– polarity output for bridge 2
OUT2_P
44
PO
+ polarity output for bridge 2
OUT3_M
37
PO
– polarity output for bridge 3
OUT3_P
36
PO
+ polarity output for bridge 3
OUT4_M
34
PO
– polarity output for bridge 4
+ polarity output for bridge 4
NAME
GND
OUT4_P
DESCRIPTION
Ground
Signal return for the four analog channel inputs (TAS5414C only)
Gain ramp control: mute (low), play (high)
Oscillator input from master or output to slave amplifiers
33
PO
PVDD
27, 28, 29, 52, 53, 54
PWR
REXT
10
AI
Precision resistor pin to set analog reference
SCL
64
DI
I2C clock input from system I2C master
SDA
63
DI/DO
STANDBY
4
DI
(1)
4
PVDD supply
I2C data I/O for communication with system I2C master
Active-low STANDBY pin. Standby (low), power up (high)
DI = digital input, DO = digital output, AI = analog input, ARTN = analog signal return, PWR = power supply, PBY = power bypass, PO =
power output, GND = ground, CP = charge pump.
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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
PVDD
DC supply voltage range
Relative to GND
PVDDMAX
Pulsed supply voltage range
t ≤ 100 ms exposure
PVDDRAMP
Supply voltage ramp rate
IPVDD
Externally imposed dc supply current per PVDD or GND
pin
IPVDD_MAX
Pulsed supply current per PVDD pin (one shot)
IO
Maximum allowed dc current per output pin
IO_MAX
(1)
MIN
MAX
UNIT
–0.3
30
V
–1
50
V
15
V/ms
±12
A
17
A
±13.5
A
t < 100 ms
Pulsed output current per output pin (single pulse)
t < 100 ms
±17
A
IIN_MAX
Maximum current, all digital and analog input pins (2)
DC or pulsed
±1
mA
IMUTE_MAX
Maximum current on MUTE pin
DC or pulsed
±20
mA
IIN_ODMAX
Maximum sink current for open-drain pins
7
mA
VLOGIC
Input voltage range for pin relative to GND (SCL, SDA,
I2C_ADDR pins)
Supply voltage range:
6V < PVDD < 24 V
–0.3
6
V
VMUTE
Voltage range for MUTE pin relative to GND
Supply voltage range:
6 V < PVDD < 24 V
–0.3
7.5
V
VSTANDBY
Input voltage range for STANDBY pin
Supply voltage range:
6 V < PVDD < 24 V
–0.3
5.5
V
VOSC_SYNC
Input voltage range for OSC_SYNC pin relative to GND
Supply voltage range:
6 V < PVDD < 24 V
–0.3
3.6
V
VGND
Maximum voltage between GND pins
±0.3
V
VAIN_AC_MAX
Maximum ac-coupled input voltage for TAS5414C (2),
analog input pins
1.9
Vrms
TJ
Maximum operating junction temperature range
–55
150
°C
Tstg
Storage temperature
–55
150
°C
(1)
(2)
Supply voltage range:
6 V < PVDD < 24 V
Pulsed current ratings are maximum survivable currents externally applied to the device. The device may encounter high currents during
reverse-battery, fortuitous open-ground, and fortuitous open-supply fault conditions.
See the Application Information section for information on analog input voltage and ac coupling.
6.2 ESD Ratings
Human body model (HBM), per AEC Q100-002 (1)
V(ESD)
(1)
Electrostatic discharge
Charged device model (CDM),
per AEC Q100-011
PHD Package
VALUE
UNIT
±2500
V
Corner pins excluding SCL
±750
All pins (including SCL) except
CP and CP_Top
±600
CP and CP_Top pins
±400
V
AEC Q100-002 indicates HBM stressing is done in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
6.3 Recommended Operating Conditions (1)
PVDDOP
VAIN
TA
(2)
DC supply voltage range relative to GND
Analog audio input signal level
Ambient temperature
TJ
Junction temperature
RL
Nominal speaker load impedance
(1)
(2)
(3)
AC-coupled input voltage
An adequate heat sink is required
to keep TJ within specified range.
MIN
TYP
MAX
6
14.4
24
UNIT
V
0
0.25–1 (3)
–20
105
°C
–40
115
°C
2
4
Vrms
Ω
The Recommended Operating Conditions table specifies only that the device is functional in the given range. See the Electrical
Characteristics table for specified performance limits.
Signal input for full unclipped output with gains of 32 dB, 26 dB, 20 dB, and 12 dB
Maximum recommended input voltage is determined by the gain setting.
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Recommended Operating Conditions(1) (continued)
VPU
Pullup voltage supply (for open-drain logic outputs)
RPU_EXT
External pullup resistor on open-drain logic outputs
MIN
TYP
MAX
3
3.3 or 5
5.5
V
50
kΩ
10
kΩ
50
kΩ
20.2
kΩ
120
nF
680
nF
Resistor connected between opendrain logic output and VPU supply
10
2
RPU_I2C
I C pullup resistance on SDA and SCL pins
RI2C_ADD
Total resistance of voltage divider for I2C address
slave 1 or slave 2, connected between D_BYP and
GND pins
1
4.7
RREXT
External resistance on REXT pin
CD_BYP ,
CA_BYP
External capacitance on D_BYP and A_BYP pins
COUT
External capacitance to GND on OUT_X pins
150
CIN
External capacitance to analog input pin in series
with input signal
0.47
CFLY
Flying capacitor on charge pump
CP
Charge pump capacitor
CMUTE
MUTE pin capacitor
COSCSYNC_MAX
Allowed loading capacitance on OSC_SYNC pin
10
1% tolerance required
19.8
20
10
50V needed for Load Dump
UNIT
μF
0.47
1
1.5
0.47
1
1.5
μF
100
220
1000
nF
75
μF
pF
6.4 Thermal Information
PARAMETER
VALUE (Typical)
UNIT
RθJC
Junction-to-case (heat slug) thermal
resistance, PHD package
1.2
°C/W
RθJA
Junction-to-ambient thermal resistance
This device is not intended to be used without a heatsink. Therefore, RθJA
is not specified. Refer to the Thermal Information section.
°C/W
6.5 Electrical Characteristics
Test conditions (unless otherwise noted): TCase = 25°C, PVDD = 14.4 V, RL = 4 Ω, fS = 417 kHz, Pout = 1 W/ch, Rext = 20 kΩ,
AES17 filter, default I2C settings, master-mode operation (see Figure 36)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
170
220
mA
OPERATING CURRENT
IPVDD_IDLE
IPVDD_Hi-Z
IPVDD_STBY
PVDD idle current
PVDD standby current
All four channels in MUTE mode
All four channels in Hi-Z mode
93
STANDBY mode, TJ ≤ 85°C
2
mA
10
μA
OUTPUT POWER
4 Ω, PVDD = 14.4 V, THD+N ≤ 1%, 1 kHz, Tc = 75°C
23
4 Ω, PVDD = 14.4 V, THD+N = 10%, 1 kHz, Tc = 75°C
25
28
4 Ω, PVDD = 24 V, THD+N = 10%, 1 kHz, Tc = 75°C
63
79
2 Ω, PVDD = 14.4 V, THD+N = 1%, 1 kHz, Tc = 75°C
POUT
Output power per channel
2 Ω, PVDD = 14.4 V, THD+N = 10%, 1 kHz, Tc = 75°C
38
40
PBTL 2-Ω operation, PVDD = 24 V, THD+N = 10%,
1 kHz, Tc = 75°C
150
PBTL 1-Ω operation, PVDD = 14.4 V, THD+N = 10%,
1 kHz, Tc = 75°C
EFFP
Power efficiency
W
50
90
4 channels operating, 23-W output power/ch, L = 10 μH,
TJ ≤ 85°C
90%
AUDIO PERFORMANCE
VNOISE
Noise voltage at output
Zero input, and A-weighting
60
100
μV
2
Channel crosstalk
P = 1 W, f = 1 kHz, enhanced crosstalk enabled via I C
(reg. 0x10)
70
PSRR
Power-supply rejection ratio
PVDD = 14.4 Vdc + 1 Vrms, f = 1 kHz
60
THD+N
Total harmonic distortion + noise
P = 1 W, f = 1 kHz
fS
Switching frequency
Switching frequency selectable for AM interference
avoidance
6
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85
dB
75
dB
0.02%
0.1%
336
357
378
392
417
442
470
500
530
kHz
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Electrical Characteristics (continued)
Test conditions (unless otherwise noted): TCase = 25°C, PVDD = 14.4 V, RL = 4 Ω, fS = 417 kHz, Pout = 1 W/ch, Rext = 20 kΩ,
AES17 filter, default I2C settings, master-mode operation (see Figure 36)
PARAMETER
RAIN
TEST CONDITIONS
Analog input resistance
Internal shunt resistance on each input pin
VIN_CM
Common-mode input voltage
AC-coupled common-mode input voltage (zero
differential input)
VCM_INT
Internal common-mode input bias voltage
Internal bias applied to IN_M pin
MIN
TYP
MAX
UNIT
63
85
106
kΩ
1.3
Vrms
3.3
G
Voltage gain (VO/VIN)
Source impedance = 0 Ω, gain measurement taken at 1
W of power per channel
GCH
Channel-to-channel variation
Any gain commanded
V
11
12
13
19
20
21
25
26
27
31
32
33
–1
0
1
dB
dB
PWM OUTPUT STAGE
RDS(on)
FET drain-to-source resistance
Not including bond wire resistance, TJ = 25°C
VO_OFFSET
Output offset voltage
Zero input signal, G = 26 dB
65
90
mΩ
±10
±50
mV
PVDD OVERVOLTAGE (OV) PROTECTION
VOV_SET
PVDD overvoltage shutdown set
24.6
26.4
28.2
V
VOV_CLEAR
PVDD overvoltage shutdown clear
24.4
25.9
27.4
V
PVDD UNDERVOLTAGE (UV) PROTECTION
VUV_SET
PVDD undervoltage shutdown set
4.9
5.3
5.6
V
VUV_CLEAR
PVDD undervoltage shutdown clear
6.2
6.6
7
V
AVDD
VA_BYP
A_BYP pin voltage
6.5
V
VA_BYP_UV_SET
A_BYP UV voltage
4.8
V
VA_BYP_UV_CLEAR
Recovery voltage A_BYP UV
5.3
V
D_BYP pin voltage
3.3
V
DVDD
VD_BYP
POWER-ON RESET (POR)
I2C active above this voltage
VPOR
PVDD voltage for POR
VPOR_HY
PVDD recovery hysteresis voltage for POR
4
V
0.1
V
1.27
V
REXT
VREXT
Rext pin voltage
CHARGE PUMP (CP)
VCPUV_SET
CP undervoltage
4.8
V
VCPUV_CLEAR
Recovery voltage for CP UV
4.9
V
OVERTEMPERATURE (OT) PROTECTION
TOTW1_CLEAR
TOTW1_SET /
TOTW2_CLEAR
TOTW2_SET /
TOTW3_CLEAR
Junction temperature for overtemperature
warning
TOTW3_SET /
TOTSD_CLEAR
TOTSD
Junction temperature for overtemperature
shutdown
TFB
Junction temperature for overtemperature
foldback
Per channel
96
112
128
°C
106
122
138
°C
116
132
148
°C
126
142
158
°C
136
152
168
°C
130
150
170
°C
CURRENT LIMITING PROTECTION
ILIM
Current limit (load current)
Level 1
Level 2 (default)
5.5
7.3
9
10.6
12.7
15
7.8
9.8
12.2
11.9
14.8
17.7
A
OVERCURRENT (OC) SHUTDOWN PROTECTION
Level 1
IMAX
Maximum current (peak output current)
Level 2 (default), Any short to supply, ground, or other
channels
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Electrical Characteristics (continued)
Test conditions (unless otherwise noted): TCase = 25°C, PVDD = 14.4 V, RL = 4 Ω, fS = 417 kHz, Pout = 1 W/ch, Rext = 20 kΩ,
AES17 filter, default I2C settings, master-mode operation (see Figure 36)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
330
445
560
mA
TWEETER DETECT
ITH_TW
Load-current threshold for tweeter detect
ILIM_TW
Load-current limit for tweeter detect
2.1
A
STANDBY MODE
VIH
STANDBY input voltage for logic-level high
VIL
STANDBY input voltage for logic-level low
ISTBY
STANDBY pin current
2
V
0.1
0.7
V
0.2
μA
MUTE MODE
GMUTE
MUTE pin ≤ 0.5 V for 200ms or I2C Mute Enabled
Output attenuation
100
dB
DC DETECT
VTH_DC_TOL
DC detect threshold tolerance
tDCD
DC detect step-response time for four
channels
25%
5.3
s
CLIP_OTW REPORT
VOH_CLIPOTW
CLIP_OTW pin output voltage for logic level
high (open-drain logic output)
VOL_CLIPOTW
CLIP_OTW pin output voltage for logic level
low (open-drain logic output)
tDELAY_CLIPDET
CLIP_OTW signal delay when output
clipping detected
2.4
V
External 47-kΩ pullup resistor to 3 V–5.5 V
0.5
V
20
μs
FAULT REPORT
VOH_FAULT
VOL_FAULT
8
FAULT pin output voltage for logic-level high
(open-drain logic output)
FAULT pin output voltage for logic-level low
(open-drain logic output)
2.4
External 47-kΩ pullup resistor to 3 V–5.5 V
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V
0.5
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Electrical Characteristics (continued)
Test conditions (unless otherwise noted): TCase = 25°C, PVDD = 14.4 V, RL = 4 Ω, fS = 417 kHz, Pout = 1 W/ch, Rext = 20 kΩ,
AES17 filter, default I2C settings, master-mode operation (see Figure 36)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
200
Ω
OPEN, SHORT DIAGNOSTICS
RS2P, RS2G
Maximum resistance to detect a short from
OUT pin(s) to PVDD or ground
ROPEN_LOAD
Minimum load resistance to detect open
circuit
Including speaker wires
300
740
1300
Ω
RSHORTED_LOAD
Maximum load resistance to detect short
circuit
Including speaker wires
0.5
1
1.5
Ω
I2C ADDRESS DECODER
tLATCH_I2CADDR
Time delay to latch I2C address after POR
300
μs
Voltage on I2C_ADDR pin for address 0
Connect to GND
0%
0%
15%
Voltage on I2C_ADDR pin for address 1
25%
35%
45%
Voltage on I2C_ADDR pin for address 2
External resistors in series between D_BYP and GND as
a voltage divider
55%
65%
75%
Voltage on I2C_ADDR pin for address 3
Connect to D_BYP
85%
100%
100%
tHOLD_I2C
Power-on hold time before I2C
communication
STANDBY high
fSCL
SCL clock frequency
VIH
SCL pin input voltage for logic-level high
VIL
SCL pin input voltage for logic-level low
VI2C_ADDR
VD_BYP
I2C
VOH
VO
1
RPU_I2C = 5-kΩ pullup, supply voltage = 3.3 V or 5 V
SDA pin output voltage for logic-level high
I2C read, RI2C = 5-kΩ pullup,
supply voltage = 3.3 V or 5 V
400
kHz
2.1
5.5
V
–0.5
1.1
V
2.4
V
2
SDA pin output voltage for logic-level low
I C read, 3-mA sink current
VIH
SDA pin input voltage for logic-level high
I2C write, RI2C = 5-kΩ pullup,
supply voltage = 3.3 V or 5 V
VIL
SDA pin input voltage for logic-level low
I2C write, RI2C = 5-kΩ pullup,
supply voltage = 3.3 V or 5 V
CI
Capacitance for SCL and SDA pins
ms
0.4
V
2.1
5.5
V
–0.5
1.1
V
10
pF
OSCILLATOR
VOH
OSC_SYNC pin output voltage for logiclevel high
2.4
V
I2C_ADDR pin set to MASTER mode
VOL
OSC_SYNC pin output voltage for logiclevel low
VIH
OSC_SYNC pin input voltage for logic-level
high
0.5
VIL
OSC_SYNC pin input voltage for logic-level
low
fOSC_SYNC
OSC_SYNC pin clock frequency
2
V
V
I2C_ADDR pin set to SLAVE mode
0.8
I2C_ADDR pin set to MASTER mode, fS = 500 kHz
3.76
4
4.24
I2C_ADDR pin set to MASTER mode, fS = 417 kHz
3.13
3.33
3.63
I2C_ADDR pin set to MASTER mode, fS = 357 kHz
2.68
2.85
3.0
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MHz
9
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6.6 Timing Requirements for I2C Interface Signals
over recommended operating conditions (unless otherwise noted)
MIN
TYP
MAX
UNIT
tr
Rise time for both SDA and SCL signals
300
ns
tf
Fall time for both SDA and SCL signals
300
ns
tw(H)
SCL pulse duration, high
0.6
μs
tw(L)
SCL pulse duration, low
1.3
μs.
tsu2
Setup time for START condition
0.6
μs
th2
START condition hold time until generation of first clock pulse
0.6
μs
tsu1
Data setup time
100
ns
th1
Data hold time
0 (1)
ns
tsu3
Setup time for STOP condition
0.6
CB
Load capacitance for each bus line
(1)
μs
400
pF
A device must internally provide a hold time of at least 300 ns for the SDA signal to bridge the undefined region of the falling edge of
SCL.
tw(H)
tw(L)
tf
tr
SCL
tsu1
th1
SDA
T0027-01
Figure 1. SCL and SDA Timing
SCL
t(buf)
th2
tsu2
tsu3
SDA
Start
Condition
Stop
Condition
T0028-01
Figure 2. Timing for Start and Stop Conditions
10
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6.7 Typical Characteristics
Figure 3. THD+N vs BTL Output Power at 1kHz
Figure 4. THD+N vs PBTL Output Power at 1kHz
Figure 5. THD+N vs Frequency at 1 Watt
Figure 6. Crosstalk vs Frequency
100
90
80
Efficiency − %
70
60
50
40
30
20
10
0
0
4
8
12
16
20
24
28
32
P − Power Per Channel − W
G007
Figure 8. Efficiency
Four Channels AT 4 Ω Each
Figure 7. Noise FFT
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Typical Characteristics (continued)
12
Power Dissipation − W
10
8
6
4
2
0
0
5
10
15
20
P − Power Per Channel − W
G008
Figure 9. Device Power Dissipation
Four Channels at 4 Ω Each
12
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7 Detailed Description
7.1 Overview
The TAS5414C is a single-chip, four-channel, analog-input audio amplifier. The design uses an ultra-efficient
class-D technology developed by Texas Instruments. This technology allows for reduced power consumption,
reduced heat, and reduced peak currents in the electrical system. The device realizes an audio sound system
design with smaller size and lower weight than traditional class-AB solutions.
There are eight core design blocks:
• Preamplifier
• PWM
• Gate drive
• Power FETs
• Diagnostics
• Protection
• Power supply
• I2C serial communication bus
7.2 Functional Block Diagram
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7.3 Feature Descption
7.3.1 Preamplifier
The preamplifier is a high-input-impedance, low-noise, low-offset-voltage input stage with adjustable gain. The
high input impedance allows the use of low-cost input capacitors while still achieving extended low-frequency
response. A dedicated, internally regulated supply pwoers the preamplifier, giving it excellent noise immunity and
channel separation. The preamplifier also includes:
1. Mute Pop-and-Click Control — The device ramps the gain gradually when receiving a mute or play
command. The start or stopping of switching in a class-D amplifier can cause another form of click and pop.
The TAS5414C incorporates a patented method to reduce the pop energy during the switching startup and
shutdown sequence. Fault conditions require rapid protection response by the TAS5414C, which does not
have time to ramp the gain down in a pop-free manner. The device transitions into Hi-Z mode when
encountering an OV, UV, OC, OT, or dc fault. Also, activation of the STANDBY pin may not be pop-free.
2. Gain Control — Setting of gains for the four channels occurs in the preamplifier via I2C control registers,
outside of the global feedback resistors of the device, thus allowing for stability of the system at all gain
settings with properly loaded conditions.
7.3.2 Pulse-Width Modulator (PWM)
The PWM converts the analog signal from the preamplifier into a switched signal of varying duty cycle. This is
the critical stage that defines the class-D architecture. In the TAS5414C, the modulator is an advanced design
with high bandwidth, low noise, low distortion, excellent stability, and full 0–100% modulation capability. The
patented PWM uses clipping recovery circuitry to eliminate the deep saturation characteristic of PWMs when the
input signal exceeds the modulator waveform.
7.3.3 Gate Drive
The gate driver accepts the low-voltage PWM signal and level-shifts it to drive a high-current, full-bridge, power
FET stage. The device uses proprietary techniques to optimize EMI and audio performance.
7.3.4 Power FETs
The BTL output for each channel comprises four rugged N-channel 30-V 65-mΩ FETs for high efficiency and
maximum power transfer to the load. These FETs can handle large voltage transients during load dump.
7.3.5 Load Diagnostics
The device incorporates load diagnostic circuitry designed to help pinpoint the nature of output misconnections
during installation. The TAS5414C includes functions for detecting and determining the status of output
connections. The device supports the following diagnostics:
• Short to GND
• Short to PVDD
• Short across load
• Open load
• Tweeter detection
Reporting to the system of the presence of any of the short or open conditions occurs via I2C register read. One
can read the tweeter-detect status from the CLIP_OTW pin when properly configured.
1. Output Short and Open Diagnostics — The device contains circuitry designed to detect shorts and open
conditions on the outputs. Invocation of the load diagnostic function can only occur when the output is in the
Hi-Z mode. There are four phases of test during load diagnostics and two levels of test. In the full level, all
channels must be in the Hi-Z state. Testing covers all four phases on each channel, all four channels at the
same time. When fewer than four channels are in Hi-Z, the reduced level of test is the only available option.
In the reduced level, the only tests available are short to PVDD and short to GND. Load diagnostics can
occur at power up before moving the amplifier out of Hi-Z mode. If the amplifier is already in play mode, it
must Mute and then Hi-Z before performing the load diagnostic. By performing the mute function, the normal
pop- and click-free transitions occur before the diagnostics begin. Performance of the diagnostics is as
shown in Figure 10. Figure 11 shows the impedance ranges for the open-load and shorted-load diagnostics.
Reading the results of the diagnostics is from the diagnostic register via I2C for each channel. With the
default settings and MUTE capacitor, the S2G and S2P phase take approximately 20 ms each, the OL phase
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Feature Descption (continued)
takes approximately 100 ms, and the SL takes approximately 230 ms. In I2C register 0x10, bit D4 can extend
the test time for S2P and S2G to 80 ms each. To prevent false S2G and S2P faults, this time extension is
necessary if the output pins have a capacitance higher than 680 nF to ground .
Figure 10. Load Diagnostics Sequence of Events
Figure 11. Open- and Shorted-Load Detection
2. Tweeter Detection — Tweeter detection is an alternate operating mode used to determine the proper
connection of a frequency-dependent load (such as a speaker with a crossover). Invoking of weeter detection
is via I2C, with individual testing of all four channels recommended. Tweeter detection uses the average
cycle-by-cycle current limit circuit (see CBC section) to measure the current delivered to the load. The proper
implementation of this diagnostic function depends on the amplitude of a user-supplied test signal and on the
impedance-versus-frequency curve of the acoustic load. The system (external to the TAS5414C) must
generate a signal to which the load responds. The frequency and amplitude of this signal must be calibrated
by the user to result in a current draw that is greater than the tweeter detection threshold when the load
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Feature Descption (continued)
under test is present, and less than the detection threshold if the load is unconnected. The current level for
the tweeter detection threshold, as well as the maximum current that can safely be delivered to a load when
in tweeter-detection mode, is in the Electrical Characteristics section of the data sheet. Reporting of the
tweeter-detection results is on the CLIP_OTW pin during the application of the test signal. With tweeter
detection activated (indicating that the tested load is present), pulses on the CLIP_OTW pin begin to toggle.
The pulses on the CLIP_OTW pins report low whenever the current exceeds the detection threshold, and the
pin remains low until the current no longer exceeds the threshold. The minimum low-pulse period that one
can expect is equal to one period of the switching frequency. Having an input signal that increases the
duration of detector activation (for example, increasing the amplitude of the input signal) increases the
amount
of
time
for
which
the
pin
reports
low.
NOTE: Because tweeter detection is an alternate operating mode, place the channels to be tested in Play
mode (via register 0x0C) after tweeter detection has been activated in order to commence the detection
process. Additionally, set up the CLIP_OTW pin via register 0x0A to report the results of tweeter detection.
7.3.6 Protection and Monitoring
1. Cycle-By-Cycle Current Limit (CBC) — The CBC current-limiting circuit terminates each PWM pulse to limit
the output current flow to the average current limit (ILIM) threshold. The overall effect on the audio in the case
of a current overload is quite similar to a voltage-clipping event, temporarily limiting power at the peaks of the
musical signal and normal operation continues without disruption on removal of the overload. The TAS5414C
does not prematurely shut down in this condition. All four channels continue in play mode and pass signal.
2. Overcurrent Shutdown (OCSD) — Under severe short-circuit events, such as a short to PVDD or ground,
the device uses a peak-current detector, and the affected channel shuts down in 200 μs to 390 μs if the
conditions are severe enough. The shutdown speed depends on a number of factors, such as the impedance
of the short circuit, supply voltage, and switching frequency. Only the shorted channels shut down in such a
scenario. The user may restart the affected channel via I2C. An OCSD event activates the fault pin, and the
I2C fault register saves a record of the affected channels. If the supply or ground short is strong enough to
exceed the peak current threshold but not severe enough to trigger the OCSD, the peak current limiter
prevents excess current from damaging the output FETs, and operation returns to normal after the short is
removed.
3. DC Detect—This circuit detects a dc offset at the output of the amplifier continuously during normal
operation. If the dc offset reaches the level defined in the I2C registers for the specified time period, the
circuit triggers. By default, a dc detection event does not shut the output down. Disabling and enabling the
shutdown function is via I2C. If enabled, the triggered channel shuts down, but the others remain playing, but
with the FAULT pin asserted. The I2C registers define the dc level.
4. Clip Detect—The clip detect circuit alerts the user to the presence of a 100% duty-cycle PWM due to a
clipped waveform. When this occurs, a signal passed to the CLIP_OTW pin asserts it until the 100% dutycycle PWM signal is no longer present. All four channels connect to the same CLIP_OTW pin. Through I2C,
one can change the CLIP_OTW signal clip-only, OTW-only, or both. A fourth mode, used only during
diagnostics, is the option to report tweeter detection events on this pin (see the Tweeter Detection section).
The microcontroller in the system can monitor the signal at the CLIP_OTW pin, and may have a
configuration that reduces the volume to all four channels in an active clipping-prevention circuit.
5. Overtemperature Warning (OTW), Overtemperature Shutdown (OTSD) and Thermal Foldback — By
default, the CLIP_OTW pin setting indicates an OTW. One can make changes via I2C commands. If selected
to indicate a temperature warning, CLIP_OTW pin assertion occurs when the die temperature reaches
warning level 1 as shown in the electrical specifications. The OTW has three temperature thresholds with a
10°C hysteresis. I2C register 0x04 indicates each threshold in bits 5, 6, and 7. The device still functions until
the temperature reaches the OTSD threshold, at which time the outputs go into Hi-Z mode and the device
asserts the FAULT pin. I2C is still active in the event of an OTSD, and one can read the registers for faults,
but all audio ceases abruptly. After the OTSD resets, one can turn the device back on through I2C. The OTW
indication remains until the temperature drops below warning level 1. The thermal foldback decreases the
channel gain.
6. Undervoltage (UV) and Power-on-Reset (POR) — The undervoltage (UV) protection detects low voltages
on PVDD, AVDD, and CP. In the event of an undervoltage, the device asserts the FAULT pin and updates
the I2C registerd, depending on which voltage caused the event. Power-on reset (POR) occurs when PVDD
drops low enough. A POR event causes the I2C to go into a high-impedance state. After the device recovers
from the POR event, the device re-initialization occur via I2C.
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Feature Descption (continued)
7. Overvoltage (OV) and Load Dump — The OV protection detects high voltages on PVDD. If PVDD reaches
the overvoltage threshold, the device asserts the FAULT pin iand updates the I2C register. The device can
withstand 50-V load-dump voltage spikes.
7.3.7 I2C Serial Communication Bus
The device communicates with the system processor via the I2C serial communication bus as an I2C slave-only
device. The processor can poll the device via I2C to determine the operating status. All reports of fault conditions
and detections are via I2C. There are also numerous features and operating conditions that one can set via I2C.
The I2C bus allows control of the following configurations:
• Independent gain control of each channel. The gain can be set to 12 dB, 20 dB, 26 dB, and 32 dB.
• Select the AM non-interference switching frequency
• Select the functionality of the OTW_CLIP pin
• Enable or disable the dc-detect function with selectable threshold
• Place a channel in Hi-Z (switching stopped) mode (mute)
• Select tweeter detect, set the detection threshold, and initiate the function
• Initiate the open- and shorted-load diagnostic
• Reset faults and return to normal switching operation from Hi-Z mode (unmute)
In addition to the standard SDA and SCL pins for the I2C bus, the TAS5414C includes a single pin that allows up
to four devices to work together in a system with no additional hardware required for communication or
synchronization. The I2C_ADDR pin sets the device in master or slave mode and selects the I2C address for that
device. Tie I2C_ADDR to DGND for master, to 1.2 Vdc for slave 1, to 2.4 Vdc for slave 2, and to D_BYP for
slave 3. The OSC_SYNC pin is for synchronizing the internal clock oscillators, thereby avoid beat frequencies.
One can apply an external oscillator to this pin for external control of the switching frequency.
Table 1. Table 7. I2C_ADDR Pin Connection
I2C_ADDR VALUE
I2C ADDRESSES
I2C_ADDR PIN CONNECTION
0 (OSC MASTER)
To SGND pin
0xD8/D9
1 (OSC SLAVE1)
35% DVDD (resistive voltage divider between D_BYP pin and SGND pin) (1)
0xDA/DB
2 (OSC SLAVE2)
65% DVDD (resistive voltage divider between D_BYP pin and SGND pin) (1)
0xDC/DD
3 (OSC SLAVE3)
To D_BYP pin
0xDE/DF
(1)
TI recommends RI2C_ADDR resistors with 5% or better tolerance.
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7.3.8 I2C Bus Protocol
The TAS5414C has a bidirectional serial control interface that is compatible with the Inter IC (I2C) bus protocol
and supports 400-kbps data transfer rates for random and sequential write and read operations. This is a slaveonly device that does not support a multimaster bus environment or wait-state insertion. The control interface
programs the registers of the device and reads device status.
The I2C bus employs two signals, SDA (data) and SCL (clock), to communicate between integrated circuits in a
system. Data transfer on the bus is serial, one bit at a time. The transfer of address and data is in byte (8-bit)
format with the most-significant bit (MSB) transferred first. In addition, the receiving device acknowledges each
byte transferred on the bus with an acknowledge bit. Each transfer operation begins with the master device
driving a start condition on the bus and ends with the master device driving a stop condition on the bus. The bus
uses transitions on the data terminal (SDA) while the clock is HIGH to indicate a start and stop conditions. A
HIGH-to-LOW transition on SDA indicates a start, and a LOW-to-HIGH transition indicates a stop. Normal databit transitions must occur within the low time of the clock period. Figure 12 shows these conditions. The master
generates the 7-bit slave address and the read/write bit to open communication with another device and then
wait for an acknowledge condition. The TAS5414C holds SDA LOW during the acknowledge-clock period to
indicate an acknowledgment. When this occurs, the master transmits the next byte of the sequence. Each device
is addressed by a unique 7-bit slave address plus R/W bit (1 byte). All compatible devices share the same
signals via a bidirectional bus using a wired-AND connection. There must be an external pullup resistor for the
SDA and SCL signals to set the HIGH level for the bus. There is no limit on the number of bytes that one can
transmit between start and stop conditions. When the last word transfers, the master generates a stop condition
to release the bus.
SDA
R/
A
W
7-Bit Slave Address
7
6
5
4
3
2
1
0
8-Bit Register Address (N)
7
6
5
4
3
2
1
0
8-Bit Register Data For
Address (N)
A
7
6
5
4
3
2
1
8-Bit Register Data For
Address (N)
A
0
7
6
5
4
3
2
1
A
0
SCL
Start
Stop
T0035-01
2
Figure 12. Typical I C Sequence
Use the I2C_ADDR pin (pin 2) to program the device for one of four addresses. These four addresses are
licensed I2C addresses and do not conflict with other licensed I2C audio devices. To communicate with the
TAS5414C, the I2C master uses addresses shown in Figure 12. Transmission of read and write data can be via
single-byte or multiple-byte data transfers.
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7.3.9 Hardware Control Pins
There are four discrete hardware pins for real-time control and indication of device status.
1. FAULT pin: This active-low open-drain output pin indicates the presence of a fault condition that requires the
device to go into the Hi-Z mode or standby mode. On assertion of this pin, the device has protected itself and
the system from potential damage. One can read the exact nature of the fault via I2C with the exception of
PVDD undervoltage faults below POR, in which case the I2C bus is no longer operational. However, the fault
is still indicated due to FAULT pin assertion.
2. CLIP_OTW pin: Configured via I2C, this active-low open-drain pin\ indicates one of the following conditions:
overtemperature warning, the detection of clipping, or the logical OR of both of these conditions. During
tweeter detect diagnostics, assertion of this pin also occurs when a tweeter is present. If overtemperature
warning is set, the device can also indicate thermal foldback on this pin.
3. MUTE pin: This active-low pin is used for hardware control of the mute-unmute function for all four channels.
Capacitor CMUTE controls the time constant for the gain ramp needed to produce a pop- and click-free mute
function. For pop- and click-free operation, implementation of the mute function should be through I2C
commands. The use of a hard mute with an external transistor does not ensure pop- and click-free operation,
and TI does not recommended it except as an emergency hard mute function in case of a loss of I2C control.
Sharing the CMUTE capacitor between multiple devices is disallowed.
4. STANDBY pin: On assertion of this active-low pin, the device goes into a complete shutdown, and the typical
current-draw limit is 2 μA, typical. STANDBY can be used to shut down the device rapidly. If all channels are
in Hi-Z, the device enters standby in approximately 1 ms. All I2C register content is lost and the I2C bus goes
into the high-impedance state on assertion of the STANDBY pin.
7.3.10 AM Radio Avoidance
To reduce interference in the AM radio band, the device has the ability to change the switching frequency via I2C
commands. Table 2 lists the recommended frequencies. The fundamental frequency and its second harmonic
straddle the AM radio band listed. This eliminates the tones that can be present due to demodulation of the
switching frequency by the AM radio.
Table 2. Recommended Switching Frequencies for AM Mode Operation
US
EUROPEAN
AM FREQUENCY
(kHz)
SWITCHING
FREQUENCY
(kHz)
AM FREQUENCY
(kHz)
SWITCHING
FREQUENCY
(kHz)
540–670
417
522–675
417
680–980
500
676–945
500
990–1180
417
946–1188
417
1190–1420
500
1189–1422
500
1430–1580
417
1423–1584
417
1590–1700
500
1585–1701
500
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7.4 Device Functional Modes
Table 3 through Table 5 depict the operating modes and faults.
Table 3. Operating Modes
STATE NAME
OUTPUT FETS
CHARGE PUMP
OSCILLATOR
I2C
AVDD and DVDD
STANDBY
Hi-Z, floating
Stopped
Stopped
Stopped
OFF
Hi-Z
Hi-Z, weak pulldown
Active
Active
Active
ON
Mute
Switching at 50%
Active
Active
Active
ON
Normal operation
Switching with audio
Active
Active
Active
ON
Table 4. Global Faults and Actions
FAULT OR
EVENT
FAULT OR
EVENT
CATEGORY
POR
Voltage fault
UV
REPORTING
METHOD
ACTION
TYPE
ACTION
RESULT
LATCHED OR
SELFCLEARING
All
FAULT pin
Hard mute (no ramp)
Standby
Self-clearing
Hi-Z, mute, normal
I2C + FAULT pin
Hi-Z
Latched
FAULT pin
Standby
Self-clearing
MONITORING
MODES
CP UV
OV
Load dump
All
2
OTW
Thermal warning
Hi-Z, mute, normal
I C + CLIP_OTW pin
None
None
Self-clearing
OTSD
Thermal fault
Hi-Z, mute, normal
I2C + FAULT pin
Hard mute (no ramp)
Standby
Latched
Table 5. Channel Faults and Actions
FAULT/
EVENT
FAULT OR EVENT
CATEGORY
MONITORING
MODES
REPORTING
METHOD
ACTION
TYPE
ACTION
RESULT
LATCHED OR
SELFCLEARING
Open-short
diagnostic
Diagnostic
Hi-Z (I2C activated)
I2C
None
None
Latched
Mute / Play
CLIP_OTW pin
Clipping
Warning
CBC load current
limit
Online protection
OC fault
Output channel fault
Warning
None
None
Self-clearing
Current Limit
Start OC
timer
Self-clearing
I2C + FAULT pin
Hard mute
Hi-Z
Latched
Hard mute
Hi-Z
Latched
I2C + CLIP_OTW
pin
Reduce Gain
None
Self-clearing
DC detect
OT Foldback
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7.4.1 Audio Shutdown and Restart Sequence
The gain ramp of the filtered output signal and the updating of the I2C registers correspond to the MUTE pin
voltage during the ramping process. The value of the external capacitor on the MUTE pin dictates the length of
time that the MUTE pin takes to complete its ramp. With the default 220-nF capacitor, the turnon common-mode
ramp takes approximately 26 ms and the gain ramp takes approximately 76 ms.
tGAIN
tCM
tCM
tGAIN
HIZ_Report_x
(All Channels)
LOW_LOW_Report_x
(All Channels)
MUTE_Report_x
(All Channels)
PLAY_Report_x
MUTE Pin
OUTx_P (Filtered)
(All Channels)
OUTx_M (Filtered)
(All Channels)
T0192-02
Figure 13. Timing Diagram for Click- and Pop-Free Shutdown and Restart Sequence
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7.4.2 Latched-Fault Shutdown and Restart Sequence Control
tI2C_CL
tDEGLITCH
tCM
tDEGLITCH
PVDD
UV
Detect
tGAIN
PVDD Normal Operating Region
UV
Reset
VUV + VUV_HY
PVDD UV Hysteresis Region
VUV
VPOR
HIZ_x
2
Internal I C Write
MUTE_Report
UV_DET
Cleared by
2
UV_LATCH
External I C Read
to Fault Register 1
2
External I C Read
FAULT Pin
MUTE Pin
OUTx_P (Filtered)
Pop
T0194-02
Figure 14. Timing Diagram for Latched-Global-Fault Shutdown and Restart
(UV Shutdown and Recovery)
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tI2C_CL
tDEGLITCH
tCM
tDEGLITCH
PVDD
VUV + VUV_HY
UV
Detect
tGAIN
PVDD Normal Operating Region
UV
Reset
PVDD UV Hysteresis Region
VUV
VPOR
2
HIZ_Report_1
Internal I C Write
HIZ_Report_2,3,4
MUTE_Report
UV_DET
Cleared by
2
UV_LATCH
External I C Read
to Fault Register 1
2
External I C Read
FAULT Pin
MUTE Pin
OUT1_P (Filtered)
OUT2,3,4_P (Filtered)
Pop
Pop
Pop
T0195-02
Figure 15. Timing Diagram for Latched-Global-Fault Shutdown and Individual-Channel Restart
(UV Shutdown and Recovery)
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7.5 Programming
7.5.1 Random Write
As shown in Figure 16, a random write or single-byte write transfer begins with the master device transmitting a
start condition followed by the I2C device address and the read/write bit. The read/write bit determines the
direction of the data transfer. For a single-byte write data transfer, the read/write bit is a 0. After receiving the
correct I2C device address and the read/write bit, the device responds with an acknowledge bit. Next, the master
transmits the address byte or bytes corresponding to the internal memory address being accessed. After
receiving the address byte, the device again responds with an acknowledge bit. Next, the master device
transmits the data byte to be written to the memory address being accessed. After receiving the data byte, the
TAS5414C again responds with an acknowledge bit. Finally, the master device transmits a stop condition to
complete the single-byte write transfer.
Start
Condition
Acknowledge
A6
A5
A4
A3
A2
A1
A0
Acknowledge
R/W ACK A7
A6
A5
2
A4
A3
A2
A1
Acknowledge
A0 ACK D7
D6
Subaddress
I C Device Address and
Read/Write Bit
D5
D4
D3
D2
D1
D0 ACK
Stop
Condition
Data Byte
T0036-01
Figure 16. Random-Write Transfer
7.5.2 Sequential Write
A sequential write transfer is identical to a single-byte data-write transfer except for the transmisson of multiple
data bytes by the master device to TAS5414C as shown in Figure 17. After receiving each data byte, the device
responds with an acknowledge bit and automatically increments the I2C subaddress by one.
Start
Condition
Acknowledge
A6
A5
A1
A0 R/W ACK A7
2
I C Device Address and
Read/Write Bit
A6
A5
A4
A3
Subaddress
A1
Acknowledge
Acknowledge
Acknowledge
Acknowledge
A0 ACK D7
D0 ACK D7
D0 ACK D7
D0 ACK
First Data Byte
Other Data Bytes
Last Data Byte
Stop
Condition
T0036-02
Figure 17. Sequential Write Transfer
24
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Programming (continued)
7.5.3 Random Read
As shown in Figure 18, a random read or single-byte read transfer begins with the master device transmitting a
start condition followed by the I2C device address and the read/write bit. For the single-byte read transfer, the
master device transmits both a write followed by a read. Initially, a write transfers the address byte or bytes of
the internal memory address to be read. Thus, the read/write bit is a 0. After receiving the address and the
read/write bit, the TAS5414C responds with an acknowledge bit. In addition, after sending the internal memory
address byte or bytes, the master device transmits another start condition followed by the device address and
the read/write bit again. This time the read/write bit is a 1, indicating a read transfer. After receiving the address
and the read/write bit, the device again responds with an acknowledge bit. Next, the TAS5414C transmits the
data byte from the memory address being read. After receiving the data byte, the master device transmits a notacknowledge followed by a stop condition to complete the single-byte read transfer.
Repeat Start
Condition
Start
Condition
Acknowledge
A6
A5
A1
A0 R/W ACK A7
Acknowledge
A6
2
A5
A4
A0 ACK
A6
A5
A1
A0 R/W ACK D7
D6
2
I C Device Address and
Read/Write Bit
Subaddress
I C Device Address and
Read/Write Bit
Not
Acknowledge
Acknowledge
D1
D0 ACK
Stop
Condition
Data Byte
T0036-03
Figure 18. Random Read Transfer
7.5.4 Sequential Read
A sequential read transfer is identical to a single-byte read transfer except for the transmission of multiple data
bytes by the TAS5414C to the master device as shown in Figure 19. Except for the last data byte, the master
device responds with an acknowledge bit after receiving each data byte and automatically increments the I2C
subaddress by one. After receiving the last data byte, the master device transmits a not-acknowledge followed by
a stop condition to complete the transfer.
Repeat Start
Condition
Start
Condition
Acknowledge
A6
2
A0 R/W ACK A7
I C Device Address and
Read/Write Bit
Acknowledge
A6
A5
Subaddress
A6
A0 ACK
2
Acknowledge
Acknowledge
Acknowledge
Not
Acknowledge
A0 R/W ACK D7
D0 ACK D7
D0 ACK D7
D0 ACK
I C Device Address and
Read/Write Bit
First Data Byte
Other Data Bytes
Last Data Byte
Stop
Condition
T0036-04
Figure 19. Sequential Read Transfer
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7.6 Register Maps
7.6.1 Register Summary
Table 6. TAS5414C I2C Addresses
0 (OSC MASTER)
2 (OSC SLAVE2)
I2C
ADDRESS
MSB
6
5
4
3
2
1
LSB
1
1
0
1
1
0
0
0
0xD8
I2C READ
1
1
0
1
1
0
0
1
0xD9
I C WRITE
1
1
0
1
1
0
1
0
0xDA
I2C READ
1
1
0
1
1
0
1
1
0xDB
I2C WRITE
1
1
0
1
1
1
0
0
0xDC
I2C READ
1
1
0
1
1
1
0
1
0xDD
I C WRITE
1
1
0
1
1
1
1
0
0xDE
I2C READ
1
1
0
1
1
1
1
1
0xDF
2
3 (OSC SLAVE3)
READ/WRITE
BIT
I2C WRITE
2
1 (OSC SLAVE1)
SELECTABLE WITH
ADDRESS PIN
FIXED ADDRESS
I2C_ADDR VALUE
Table 7. I2C Address Register Definitions
ADDRESS
TYPE
0x00
Read
Latched fault register 1, global and channel fault
0x01
Read
Latched fault register 2, dc offset and overcurrent detect
0x02
Read
Latched diagnostic register 1, load diagnostics
0x03
Read
Latched diagnostic register 2, load diagnostics
0x04
Read
External status register 1, temperature and voltage detect
0x05
Read
External status register 2, Hi-Z and low-low state
0x06
Read
External status register 3, mute and play modes
0x07
Read
External status register 4, load diagnostics
0x08
Read, Write
External control register 1, channel gain select
0x09
Read, Write
External control register 2, overcurrent control
0x0A
Read, Write
External control register 3, switching frequency and clip pin select
0x0B
Read, Write
External control register 4, load diagnostic, master mode select
0x0C
Read, Write
External control register 5, output state control
External control register 6, output state control
0x0D
Read, Write
0x0E, 0x0F
–
0x10
Read, Write
0x13
Read
REGISTER DESCRIPTION
Not used
External control register 7, dc detect threshold selection
External status register 5, overtemperature shutdown and thermal foldback
7.6.2 Registers
7.6.2.1 Fault Register 1 (0x00) Protection
Figure 20. Fault Register 1 (0x00) Protection
7
PVDD_OV
R
6
PVVD_UV
R
5
AVVD_UV
R
4
CP_UV
R
3
OTSD
R
2
OCSD
R
1
DC_OFF
R
0
OTW
R
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 8. Fault Register 1 (0x00) Protection Field Descriptions
Bit
26
Field
Type
Reset
Description
7
PVDD_OV
R
0
PVDD overvoltage has occurred.
6
PVVD_UV
R
0
PVDD undervoltage has occurred.
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Table 8. Fault Register 1 (0x00) Protection Field Descriptions (continued)
Bit
Field
Type
Reset
Description
5
AVDD_UV
R
0
AVDD, analog voltage, undervoltage has occurred.
4
CP_UV
R
0
Charge-pump undervoltage has occurred.
3
OTSD
R
0
Overtemperature shutdown has occurred.
2
OCSD
R
0
Overcurrent shutdown has occurred in any channel.
1
DC_OFF
R
0
DC offset has occurred in any channel.
0
OTW
R
0
Overtemperature warning has occurred.
7.6.3 Fault Register 2 (0x01) Protection
Figure 21. Fault Register 2 (0x01) Protection
7
DC_OFF_CH4
R
6
DC_OFF_CH3
R
5
DC_OFF_CH2
R
4
DC_OFF_CH1
R
3
OCSD_CH4
R
2
OCSD_CH3
R
1
OCSD_CH2
R
0
OCSD_CH1
R
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 9. Fault Register 2 (0x01) Protection Field Descriptions
Bit
Field
Type
Reset
Description
7
DC_OFF_CH4
R
0
DC offset channel 4 has occurred.
6
DC_OFF_CH3
R
0
DC offset channel 3 has occurred.
5
DC_OFF_CH2
R
0
DC offset channel 2 has occurred.
4
DC_OFF_CH1
R
0
DC offset channel 1 has occurred.
3
OCSD_CH4
R
0
Overcurrent shutdown channel 4 has occurred.
2
OCSD_CH3
R
0
Overcurrent shutdown channel 3 has occurred.
1
OCSD_CH2
R
0
Overcurrent shutdown channel 2 has occurred.
0
OCSD_CH1
R
0
Overcurrent shutdown channel 1 has occurred.
7.6.4 Diagnostic Register 1 (0x02) Load Diagnostics
Figure 22. Diagnostic Register 1 (0x02) Load Diagnostics
7
OL_CH2
R
6
SL_CH2
R
5
S2P_CH2
R
4
S2G_CH2
R
3
OL_CH1
R
2
SL_CH1
R
1
S2P_CH1
R
0
S2G_CH1
R
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 10. Diagnostic Register 1 (0x02) Load Diagnostics Field Descriptions
Bit
Field
Type
Reset
Description
7
OL_CH2
R
0
Open load channel 2 has occurred.
6
SL_CH2
R
0
Shorted load channel 2 has occurred.
5
S2P_CH2
R
0
Output short to PVDD channel 2 has occurred.
4
S2G_CH2
R
0
Output short to ground channel 2 has occurred.
3
OL_CH1
R
0
Open load channel 1 has occurred.
2
SL_CH1
R
0
Shorted load channel 1 has occurred.
1
S2P_CH1
R
0
Output short to PVDD channel 1 has occurred.
0
S2G_CH1
R
0
Output short to ground channel 1 has occurred.
7.6.5 Diagnostic Register 2 (0x03) Load Diagnostics
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Figure 23. Diagnostic Register 2 (0x03) Load Diagnostics
7
OL_CH4
R
6
SL_CH4
R
5
S2P_CH4
R
4
S2G_CH4
R
3
OL_CH3
R
2
SL_CH3
R
1
S2P_CH3
R
0
S2G_CH3
R
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 11. Diagnostic Register 2 (0x03) Load Diagnostics Field Descriptions
Bit
Field
Type
Reset
Description
7
OL_CH4
R
0
Open load channel 4 has occurred.
6
SL_CH4
R
0
Shorted load channel 4 has occurred.
5
S2P_CH4
R
0
Output short to PVDD channel 4 has occurred.
4
S2G_CH4
R
0
Output short to ground channel 4 has occurred.
3
OL_CH3
R
0
Open load channel 3 has occurred.
2
SL_CH3
R
0
Shorted load channel 3 has occurred.
1
S2P_CH3
R
0
Output short to PVDD channel 3 has occurred.
0
S2G_CH3
R
0
Output short to ground channel 3 has occurred.
7.6.6 External Status Register 1 (0x04) Fault Detection
Figure 24. External Status Register 1 (0x04) Fault Detection
7
6
OTW_LEVEL
R
R
5
4
OTSD_ST
R
R
3
CPUV_ST
R
2
AVDD_UV_ST
R
1
PVDD_UV_ST
R
0
PVDD_OV_ST
R
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 12. External Status Register 1 (0x04) Fault Detection Field Descriptions
Bit
Field
Type
Reset
Description
7-5
OTW_LEVEL
R
000
Overtemperature warning:
000: Default value
001: Overtemperature warning
011: Overtemperature warning 1
101: Overtemperature warning 2
111: Overtemperature warning 3
4
OTSD_ST
R
0
Overtemperature shutdown is present.
3
CPUV_ST
R
0
Charge-pump voltage fault is present.
2
AVDD_UV_ST
R
0
AVDD, analog voltage fault is present.
1
PVDD_UV_ST
R
0
PVDD undervoltage fault is present.
0
PVDD_OV_ST
R
0
PVDD overvoltage fault is present.
7.6.7 External Status Register 2 (0x05) Output State of Individual Channels
Figure 25. External Status Register 2 (0x05) Output State of Individual Channels
7
CH4_LL_ST
R
6
CH3_LL_ST
R
5
CH2_LL_ST
R
4
CH1_LL_ST
R
3
CH4_HIZ_ST
R
2
CH3_HIZ_ST
R
1
CH2_HIZ_ST
R
0
CH1_HIZ_ST
R
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 13. External Status Register 2 (0x05) Output State of Individual Channels Field Descriptions
Bit
28
Field
Type
Reset
Description
7
CH4_LL_ST
R
0
Channel 4 low-low mode (0 = not low-low, 1 = low-low)(1)
6
CH3_LL_ST
R
0
Channel 3 low-low mode (0 = not low-low, 1 = low-low)(1)
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Table 13. External Status Register 2 (0x05) Output State of Individual Channels Field
Descriptions (continued)
Bit
(1)
Field
Type
Reset
Description
5
CH2_LL_ST
R
0
Channel 2 low-low mode (0 = not low-low, 1 = low-low)(1)
4
CH1_LL_ST
R
0
Channel 1 low-low mode (0 = not low-low, 1 = low-low) (1)
3
CH4_HIZ_ST
R
1
Channel 4 Hi-Z mode (0 = not Hi-Z, 1 = Hi-Z)
2
CH3_HIZ_ST
R
1
Channel 3 Hi-Z mode (0 = not Hi-Z, 1 = Hi-Z)
1
CH2_HIZ_ST
R
1
Channel 2 Hi-Z mode (0 = not Hi-Z, 1 = Hi-Z)
0
CH1_HIZ_ST
R
1
Channel 1 Hi-Z mode (0 = not Hi-Z, 1 = Hi-Z)
Low-low is defined as both outputs actively pulled to ground.
7.6.8 External Status Register 3 (0x06) Play and Mute Modes
Figure 26. External Status Register 3 (0x06) Play and Mute Modes
7
CH4_MUTE_S
T
R
6
CH3_MUTE_S
T
R
5
CH2_MUTE_S
T
R
4
CH1_MUTE_S
T
R
3
2
1
0
CH4_PLAY_ST CH3_PLAY_ST CH2_PLAY_ST CH1_PLAY_ST
R
R
R
R
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 14. External Status Register 3 (0x06) Play and Mute Modes Field Descriptions
Bit
Field
Type
Reset
Description
7
CH4_MUTE_ST
R
0
Channel 4 mute mode is enabled.
6
CH3_MUTE_ST
R
0
Channel 3 mute mode is enabled.
5
CH2_MUTE_ST
R
0
Channel 2 mute mode is enabled.
4
CH1_MUTE_ST
R
0
Channel 1 mute mode is enabled.
3
CH4_PLAY_ST
R
0
Channel 4 play mode is enabled.
2
CH3_PLAY_ST
R
0
Channel 3 play mode is enabled.
1
CH2_PLAY_ST
R
0
Channel 2 play mode is enabled.
0
CH1_PLAY_ST
R
0
Channel 1 play mode is enabled.
7.6.9 External Status Register 4 (0x07) Load Diagnostics
Figure 27. External Status Register 4 (0x07) Load Diagnostics
7
CH4_OTFB
6
CH3_OTFB
5
CH2_OTFB
4
CH1_OTFB
R
R
R
R
3
CH4_LD_MOD
E
R
2
CH3_LD_MOD
E
R
1
CH2_LD_MOD
E
R
0
CH1_LD_MOD
E
R
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 15. External Status Register 4 (0x07) Load Diagnostics Field Descriptions
Bit
Field
Type
Reset
Description
7
CH4_OTFB
R
0
Channel 4 is in overtemperature foldback.
6
CH3_OTFB
R
0
Channel 3 is in overtemperature foldback.
5
CH2_OTFB
R
0
Channel 2 is in overtemperature foldback.
4
CH1_OTFB
R
0
Channel 1 is in overtemperature foldback.
3
CH4_LD_MODE
R
0
Channel 4 is in load diagnostics mode.
2
CH3_LD_MODE
R
0
Channel 3is in load diagnostics mode.
1
CH2_LD_MODE
R
0
Channel 2 is in load diagnostics mode.
0
CH1_LD_MODE
R
0
Channel 1 is in load diagnostics mode.
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7.6.10 External Control Register 1 (0x08) Gain Select
Figure 28. External Control Register 1 (0x08) Gain Select
7
6
5
GAIN_CH4
R/W
4
3
GAIN_CH3
R/W
R/W
2
1
GAIN_CH2
R/W
R/W
0
GAIN_CH1
R/W
R/W
R/W
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 16. External Control Register 1 (0x08) Gain Select Field Descriptions
Bit
Field
Type
Reset
Description
7-6
GAIN_CH4
R/W
10
Set channel 4 gain.
10: Set channel 4 gain to 26 dB (Default)
00: Set channel 4 gain to 12 dB
01: Set channel 4 gain to 20 dB
11: Set channel 4 gain to 32 dB
5-4
GAIN_CH3
R/W
10
Set channel 3 gain.
10: Set channel 3 gain to 26 dB (Default)
00: Set channel 3 gain to 12 dB
01: Set channel 3 gain to 20 dB
11: Set channel 3 gain to 32 dB
3-2
GAIN_CH2
R/W
10
Set channel 2 gain.
10: Set channel 2 gain to 26 dB (Default)
00: Set channel 2 gain to 12 dB
01: Set channel 2 gain to 20 dB
11: Set channel 2 gain to 32 dB
1-0
GAIN_CH1
R/W
10
Set channel 1 gain.
10: Set channel 1 gain to 26 dB (Default)
00: Set channel 1 gain to 12 dB
01: Set channel 1 gain to 20 dB
11: Set channel 1 gain to 32 dB
7.6.11 External Control Register 2 (0x09) Overcurrent Control
Figure 29. External Control Register 2 (0x09) Overcurrent Control
7
CH4_OC
R/W
6
CH4_OC
R/W
5
CH4_OC
R/W
4
CH4_OC
R/W
3
R/W
2
RESERVED
R/W
1
R/W
0
THFB_DIS
R/W
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 17. External Control Register 2 (0x09) Overcurrent Control Field Descriptions
Bit
Field
Type
Reset
Description
7
CH4_OC
R/W
1
Set channel 4 overcurrent limit ( 0 - level 1, 1 - level 2)
6
CH3_OC
R/W
1
Set channel 3 overcurrent limit ( 0 - level 1, 1 - level 2)
5
CH2_OC
R/W
1
Set channel 2 overcurrent limit ( 0 - level 1, 1 - level 2)
4
CH1_OC
R/W
1
Set channel 1 overcurrent limit ( 0 - level 1, 1 - level 2)
3-1
Reserved
R/W
0
Reserved
0
THFB_DIS
R/W
0
Disable thermal foldback
7.6.12 External Control Register 3 (0x0A) Switching Frequency Select and Clip_OTW Configuration
30
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Figure 30. External Control Register 3 (0x0A) Switching Frequency Select and Clip_OTW Configuration
7
CLIP_OTW_TH
FB
R/W
6
SYNC_PULSE
5
PHASE
4
HARD_STOP
R/W
R/W
R/W
3
2
CLIP_OTW_CONF
R/W
1
0
PWM_FREQ
R/W
R/W
R/W
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 18. External Control Register 3 (0x0A) Switching Frequency Select and Clip_OTW Configuration
Field Descriptions
Bit
Field
Type
Reset
Description
7
CLIP-OTW_THFB
R/W
0
Configure CLIP_OTW pin to report thermal foldback
6
SYNC_PULSE
R/W
0
Send sync pulse from OSC_SYNC pin (device must be in
master mode).
5
PHASE
R/W
0
Set fS to a 180° phase difference between adjacent channels.
4
HARD_STOP
R/W
0
Enable hard-stop mode.
CLIP_OTW_CONF
R/W
11
Configure CLIP_OTW pin.
3-2
11: CLIP_OTW pin does not report thermal foldback (Default)
00: Configure CLIP_OTW pin to report tweeter detect only.
01: Configure CLIP_OTW pin to report clip detect only.
10: Configure CLIP_OTW pin to report overtemperature warning
only.
1-0
PWM_FREQ
R/W
01
Set fS.
01: Set fS = 417 kHz (Default)
00: Set fS = 500 kHz
10: Set fS = 357 kHz
11: Invalid frequency selection (do not set)
7.6.13 External Control Register 4 (0x0B) Load Diagnostics and Master/Slave Control
Figure 31. External Control Register 4 (0x0B) Load Diagnostics and Master/Slave Control
7
EN_CLK_OSC
_SYNC
R/W
6
EN_SLAVE
5
EN_TW_DET
4
DIS_DC_DET
3
EN_CH4_LD
2
EN_CH3_LD
1
EN_CH2_LD
0
EN_CH1_LD
R/W
R/W
R/W
R/W
R/W
R/W
R/W
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 19. (External Control Register 4 (0x0B) Load Diagnostics and Master/Slave Control Field
Descriptions
Bit
Field
Type
Reset
Description
7
EN_CLK_OSC_SYNC
R/W
0
Enable clock output on OSC_SYNC pin (valid only in master
mode)
6
EN_SLAVE
R/W
1
Enable slave mode (external oscillator is necessary)
5
EN_TW_DET
R/W
0
Enable tweeter-detect mode
4
DIS_DC_DET
R/W
1
Disable dc detection on all channels
3
EN_CH4_LD
R/W
0
Run channel 4 load diagnostics
2
EN_CH3_LD
R/W
0
Run channel 3 load diagnostics
1
EN_CH2_LD
R/W
0
Run channel 2 load diagnostics
0
EN_CH1_LD
R/W
0
Run channel 1 load diagnostics
7.6.14 External Control Register 5 (0x0C) Output Control
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Figure 32. External Control Register 5 (0x0C) Output Control
7
RST
6
Reserved
R/W
R/W
5
DC_DET_SD_
DIS
R/W
4
HIZ_TO_PLAY
3
CH4_MUTE
2
CH3_MUTE
1
CH2_MUTE
0
CH1_MUTE
R/W
R/W
R/W
R/W
R/W
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 20. External Control Register 5 (0x0C) Output Control Field Descriptions
Bit
Field
Type
Reset
Description
7
RST
R/W
0
Reset device
6
Reserved
R/W
0
Reserved
5
DC_DET_SD_DIS
R/W
0
DC detect shutdown disabled, but still reports a fault
4
HIZ_TO_PLAY
R/W
1
Set non-Hi-Z channels to play mode, (unmute)
3
CH4_MUTE
R/W
1
Set channel 4 to mute mode, non-Hi-Z
2
CH3_MUTE
R/W
1
Set channel 3 to mute mode, non-Hi-Z
1
CH2_MUTE
R/W
1
Set channel 2 to mute mode, non-Hi-Z
0
CH1_MUTE
R/W
1
Set channel 1 to mute mode, non-Hi-Z
7.6.15 External Control Register 6 (0x0D) Output Control
Figure 33. External Control Register 6 (0x0D) Output Control
7
6
Reserved
R/W
R/W
5
PBTL_34
R/W
4
PBTL_12
R/W
3
CH4_LL
R/W
2
CH3_LL
R/W
1
CH2_LL
R/W
0
CH1_LL
R/W
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 21. External Control Register 6 (0x0D) Output Control Field Descriptions
Bit
Field
Type
Reset
Description
7-6
Reserved
R/W
0
Reserved
5
PBTL_34
R/W
0
Connect channel 3 and channel 4 for parallel BTL mode
4
PBTL_12
R/W
0
Connect channel 1 and channel 2 for parallel BTL mode
3
CH4_LL
R/W
0
Set channel 4 to low-low state
2
CH3_LL
R/W
0
Set channel 3 to low-low state
1
CH2_LL
R/W
0
Set channel 2 to low-low state
0
CH1_LL
R/W
0
Set channel 1 to low-low state
7.6.16 External Control Register 7 (0x10) Miscellaneous Selection
Figure 34. External Control Register 7 (0x10) Miscellaneous Selection
7
SLOWER_CM_
RAMP
R/W
6
Reserved
R/W
5
SLOW_CM_RA
MP
R/W
4
4X_LD
3
ADD_20MS
R/W
R/W
2
EN_XTALK_EN
H
R/W
1
0
DC_DET_VAL
R/W
R/W
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 22. External Control Register 7 (0x10) Miscellaneous Selection
Bit
32
Field
Type
Reset
Description
7
SLOWER_CM_RAMP
R/W
0
Slower common-mode (CM) ramp-down from mute mode
6
Reserved
R/W
0
Reserved
5
SLOW_CM_RAMP
R/W
0
Slow common-mode ramp, increase the default time by 3x
4
4X_LD
R/W
0
Short-to-power (S2P) and short-to-ground (S2G) load-diagnostic
phases take 4x longer
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Table 22. External Control Register 7 (0x10) Miscellaneous Selection (continued)
Bit
Field
Type
Reset
Description
3
ADD_20MS
R/W
0
Adds a 20-ms delay between load diagnostic phases
2
EN_XTALK_ENH
R/W
0
Enable crosstalk enhancement
DC_DET_VAL
R/W
01
Set DC detect value
1-0
01: Default DC detect value (1.6 V, Default)
01: Minimum DC detect value (0.8 V)
10: Maximum DC detect value (2.4 V)
7.6.17 External Status Register 5 (0x13) Overtemperature and Thermal Foldback Status
Figure 35. External Status Register 5 (0x13) Overtemperature and Thermal Foldback Status
7
CH4_OTSD_S
T
R
6
CH3_OTSD_S
T
R
5
CH2_OTSD_S
T
R
4
CH1_OTSD_S
T
R
3
2
1
0
CH4_THFB_ST CH3_THFB_ST CH2_THFB_ST CH1_THFB_ST
R
R
R
R
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 23. External Status Register 5 (0x13) Overtemperature and Thermal Foldback Status Field
Descriptions
Bit
Field
Type
Reset
Description
7
CH4_OTSD_ST
R
0
Channel 4 in overtemperature shutdown
6
CH3_OTSD_ST
R
0
Channel 3 in overtemperature shutdown
5
CH2_OTSD_ST
R
0
Channel 2 in overtemperature shutdown
4
CH1_OTSD_ST
R
0
Channel 1 in overtemperature shutdown
3
CH4_THFB_ST
R
0
Channel 4 in thermal foldback
2
CH3_THFB_ST
R
0
Channel 3 in thermal foldback
1
CH2_THFB_ST
R
0
Channel 2 in thermal foldback
0
CH1_THFB_ST
R
0
Channel 1 in thermal foldback
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8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The TAS5414C is a four-channel Class-D audio amplifier designed for use in head units and external amplifier
modules. The device incorporates all the functionality needed to perform in the demanding OEM applications
area.
8.2 Typical Application
Figure 36 shows a typical application circuit for the TAS5414C.
Figure 36. TAS5414C Typical Application Schematic
34
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Typical Application (continued)
8.2.1 Design Requirements
•
Power Supplies
The device needs only a single power supply compliant with the recommended operation range. The device
is designed to work with either a vehicle battery or regulated boost power supply.
Communication
The device communicates with the system controller with both discrete hardware control pins and with I 2 C.
The device is an I 2 C slave and thus requires a master. If a master I 2 C-compliant device is not present in
the system, it is still possible to use the device, but only with the default settings. Diagnostic information is
limited to the discrete reporting FAULT pin.
External Components
Table 24 lists the components required for the device.
•
•
Table 24. Supporting Components
EVM Designator
Quanity
C37, C39, C48, C52
4
0.47μF ± 10%
Value
1206
Size
Film, 16-V
Description
Analog audio input filter, bypass
Use in Application
C5, C6, C7, C8
4
330 μF ± 20%
10 mm
Low-ESR aluminum capacitor, 35-V
Power supply
C9, C10, C50, C51,
C27, C28
6
1 μF ± 10%
0805
X7R ceramic capacitor, 50-V
Power supply
C53, C55
2
1uF ± 10%
0805
Film, 16-V
Analog audio input filter, bypass
C14, C23, C32, C43
4
470nF ± 10%
0805
X7R ceramic capacitor, 50-V
Amplifier output filtering
C11, C15, C20,
C24, C29, C34,
C40, C45
8
470 pF ± 10%
0603
X7R ceramic capacitor, 50-V
Amplifier output snubbers
C19, C33
2
0.1 μF ± 10%
0603
X7R ceramic capacitor, 25-V
Power supply
C4
1
2200 pF ± 10%
0603
X7R ceramic capacitor, 50-V
Power supply
C3
1
0.082 μF ± 10%
0603
X7R ceramic capacitor, 25-V
Power supply
C1, C2
2
4.7 μF ± 10%
1206
X7R ceramic capacitor, 25-V
Power supply
C12, C16, C21,
C25, C30, C35,
C41, C46
8
0.47 μF ± 10%
0603
X7R ceramic capacitor, 25-V
Output EMI filtering
C18
1
220nF ± 10%
0603
X7R ceramic capacitor, 25-V
Mute timing
L1
1
10 μH ± 20%
13.5 mm ×13.5
mm
Shielded ferrite inductor
Power supply
L2, L3, L4, L5
4
10 μH ± 20%
12 mm × 14
mm
Dual inductor
Amplifier output filtering
R5, R6, R7
3
49.9 kΩ ± 1%
0805
Resistors, 0.125-W
Analog audio input filter
R8, R10, R12, R14,
R17, R19, R26, R29
8
5.6 Ω ± 5%
0805
Resistors, 0.125-W
Output snubbers
R16
1
20.0 kΩ ± 1%
0805
Resistors, 0.125-W
Power supply
8.2.2 Detailed Design Procedure
8.2.2.1 Hardware and Software Design
•
•
•
•
•
Step 1: Hardware Schematic Design: Using the Typical Application Schematic as a guide, integrate the
hardware into the system schematic.
Step 2: Following the recommended layout guidelines, integrate the device and its supporting components
into the system PCB file.
Step 3: Thermal Design: The device has an exposed thermal pad which requires proper soldering. For more
information, see the Semiconductor and IC Package Thermal Metrics , SPRA953, and the PowerPAD
Thermally Enhanced Package, SLMA002G, application reports.
Step 4: Develop software: The EVM User's Guide has detailed instructions for how to set up the device,
interpret diagnostic information, and so forth. For information about control registers, see the Table 7 section.
For questions and support go to the E2E forums.
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8.2.2.2 Parallel Operation (PBTL)
The device can drive more current by paralleling BTL channels on the load side of the LC output filter. Parallel
operation requires identical I2C settings for any two paralleled channels in order to have reliable system
performance and even power dissipation on multiple channels. For smooth power up, power down, and mute
operation, the same control commands (such as mute, play, Hi-Z, and so on) should be sent to the paralleled
channels at the same time. The device also supports load diagnostics for parallel connection. There is no support
for paralleling on the device side of the LC output filter, which can result in device failure. When paralleling
channels, use the parallel BTL I2C control bits in register 0x0D. Parallel channels 1 and 2, and/or channels 3 and
4. Setting these bits allows the thermal foldback to react on both channels equally. Provide the audio input to
channel 2 if paralleing channels 1 and 2, and channel 3 if paralleling channels 3 and 4.
8.2.2.3 Input Filter Design
For the TAS5414C device, the IN_M pin should have an impedance to GND that is equivalent to the parallel
combination of the input impedances of all IN_P channels combined, including any source impedance from the
previous stage in the system design. For example, if each of the four IN_P channels have a 1-µF dc blocking
capacitor, 1 kΩ of series resistance due to an input RC filter, and 1 kΩ of source resistance from the DAC
supplying the audio signal, then the IN_M channel should have a 4-µF capacitor in series with a 500-Ω resistor to
GND (4 × 1 µF in parallel = 4 µF; 4 × 2 kΩ in parallel = 500 Ω).
8.2.2.4 Amplifier Output Filtering
The output FETs drive the amplifier outputs in an H-bridge configuration. These transistors are either fully off or
on. The result is a square-wave output signal with a duty cycle that is proportional to the amplitude of the audio
signal. The amplifier outputs require a low-pass filter to filter out the PWM modulation carrier frequency. People
frequently call this filter the L-C filter, due to the presence of an inductive element L and a capacitive element C
to make up the 2-pole low-pass filter. The L-C filter attenuates the carrier frequency, reducing electromagnetic
emissions and smoothing the current waveform which the load draws from the power supply. See the Class-D
LC Filter Design application report, SLOA119 , for a detailed description on proper component selection and
design of an L-C filter based upon the desired load and response.
8.2.2.5 Line Driver Applications
In many audio applications, the end user would like to use the same head unit to drive either a speaker (with
several ohms of impedance) or an external amplifier (with several kilohms of impedance). The design is capable
of supporting both applications; however, the one must design the output filter and system to handle the
expected output load conditions.
36
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8.2.3 Application Curves
100
12
90
10
80
Power Dissipation − W
Efficiency − %
70
60
50
40
30
20
8
6
4
2
10
0
0
0
4
8
12
16
20
24
28
32
0
P − Power Per Channel − W
G007
Figure 37. Efficiency
Four Channels AT 4 Ω Each
5
10
15
20
P − Power Per Channel − W
G008
Figure 38. Device Power Dissipation
Four Channels at 4 Ω Each
9 Power Supply Recommendations
A car battery that can have a large voltage range most commonly provides the power for the device. PVDD is a
filtered battery voltage, and it is the supply for the output FETS and the low-side FET gate driver. The supply for
the high-side FET gate driver comes from a charge pump (CP). The charge pump supplies the gate-drive voltage
for all four channels. AVDD, provided by an internal linear regulator powers the analog circuitry. This supply
requires 0.1-μF, 10-V external bypass capacitor at the A_BYP pin. TI recommends not connecting any external
components except the bypass capacitor to this pin. DVDD, which comes from an internal linear regulator,
powers the digital circuitry. The D_BYP pin requires a 0.1-μF, 10-V external bypass capacitor. TI recommends
not connecting any external components except the bypass capacitor to this pin.
The TAS5414C can withstand fortuitous open-ground and -power conditions. Fortuitous open ground usually
occurs when a speaker wire shorts to ground, allowing for a second ground path through the body diode in the
output FETs. The diagnostic capability allows debugging of the speakers and speaker wires, eliminating the need
to remove the amplifier to diagnose the problem.
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10 Layout
10.1 Layout Guidelines
•
•
•
•
The EVM layout optimizes for low noise and EMC performance.
The TAS5414C device has a thermal pad up, therefore a the layout must take into account an external
heatsink.
Layout also affects EMC performance.
The EVM PCB illustrations form the basis for the layout discussions.
10.2 Layout Example
The areas indicated by the label "A", are critical to proper operation and EMC layout. The PVDD and ground
decoupling capacitors should be close to the device. These decoupling capacitors must be on both groups of
PVDD pins to ground. The ground connections of the snubber circuits must also be close to the grounds of the
device. The grounds of the decoupling caps and the snubber circuits do not pass through vias before connecting
to the device ground. This reduces the ground impedance for EMC mititgation.
Figure 39. Top Layer
38
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Layout Example (continued)
The area referenced as "B" are nets in the PCB layout that have large high frequency switching signals. These
should be buried on an inner layer with ground planes on layers above and below to mitigate EMC.
Figure 40. A Mid Layer
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Layout Example (continued)
The bottom layer in the EVM is almost all ground plane. It can be seen that the other layers have ground planes
that fill unused areas. All these ground planes need to be connected together through many vias to reduce the
impedance between the ground layers. This allows for reduced EMI.
Figure 41. Bottom Layer
40
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10.3 Thermal Consideration
The design of the thermally augmented package is for interface directly to heat sinks using a thermal interface
compound (for example, Arctic Silver, Ceramique thermal compound). The heat sink then absorbs heat from the
ICs and couples it to the local air. With proper thermal management this process can reach equilibrium at a lower
temperature and heat can be continually removed from the ICs. Because of the device efficiency, heat sinks can
be smaller than those required for linear amplifiers of equivalent performance.
RθJA is a system thermal resistance from junction to ambient air. As such, it is a system parameter with the
following components:
• RθJC (the thermal resistance from junction to case, or in this case the heat slug)
• Thermal resistance of the thermal grease
• Thermal resistance of the heat sink
One can calculate the thermal resistance of the thermal grease from the exposed heat slug area and the
manufacturer's value for the area thermal resistance of the thermal grease (expressed in °C-in2/W or °C-mm2/W).
The area thermal resistance of the example thermal grease with a 0.001-inch (0.0254-mm) thick layer is about
0.007°C-in2/W (4.52°C-mm2/W). The approximate exposed heat slug size is as follows:
0.099 in2 (64 mm2)
64-pin QFP
Dividing the example area thermal resistance of the thermal grease by the area of the heat slug gives the actual
resistance through the thermal grease:
64-pin QFP
0.07°C/W
The thermal resistance of thermal pads is generally considerably higher than a thin thermal-grease layer.
Thermal tape has an even higher thermal resistance and should not be used at all. The heat-sink vendor
generally predicts heat sink thermal resistance, either modeled using a continuous-flow dynamics (CFD) model,
or measured.
Thus, for a single monaural channel in the IC, the system RθJA = RθJC + thermal-grease resistance + heat-sink
resistance.
Table 25 indicates modeled parameters for one device on a heat sink. The junction temperature setting is at
115°C while delivering 20 watts per channel into 4-Ω loads with no clipping. The assumed thickness of the
thermal grease is about 0.001 inches (0.0254 mm).
Table 25. QFP Package Modeled Parameters
DEVICE
64-PIN QFP
Ambient temperature
25°C
Power to load
20 W × 4
Power dissipation
1.9 W × 4
ΔT inside package
7.6°C
ΔT through thermal grease
0.46°C
Required heatsink thermal resistance
10.78°C/W
Junction temperature
115°C
System RθJA
11.85°C/W
RθJA × power dissipation
90°C
10.4 Electrical Connection of Heat Slug and Heat Sink
Electrically connect the heat sink attached to the heat slug of the device to GND, or leave it floating. Do not
connect the heat slug to any other electrical node.
10.5 EMI Considerations
EMI performance depends on both careful integrated circuit design and good system-level design. Controlling
sources of electromagnetic interference (EMI) was a major consideration in all aspects of the design.
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EMI Considerations (continued)
The design has minimal parasitic inductances due to the short leads on the package. This dramatically reduces
the EMI that results from current passing from the die to the system PCB. Each channel also operates at a
different phase. The phase between channels is I2C selectable to either 45° or 180°, to reduce EMI caused by
high-current switching. The design also incorporates circuitry that optimizes output transitions that cause EMI.
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11 Device and Documentation Support
11.1 Device Support
11.1.1 Development Support
11.1.2 Device Nomenclature
11.2 Documentation Support
11.2.1 Related Documentation
11.3 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
11.4 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
11.5 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
11.6 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
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12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
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10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
TAS5414CTPHD
ACTIVE
HTQFP
PHD
64
90
RoHS & Green
NIPDAU
Level-3-260C-168 HR
-40 to 105
TAS5414C
TAS5414CTPHDR
ACTIVE
HTQFP
PHD
64
1000
RoHS & Green
NIPDAU
Level-3-260C-168 HR
-40 to 105
TAS5414C
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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