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THS4281
SLOS432B – APRIL 2004 – REVISED OCTOBER 2015
THS4281 Very Low-Power, High-Speed, Rail-to-Rail Input and Output
Voltage-Feedback Operational Amplifier
1 Features
•
•
1
•
•
•
•
•
•
•
•
•
3 Description
Fabricated using the BiCom-II process, the THS4281
is a low-power, rail-to-rail input and output, voltagefeedback operational amplifier designed to operate
over a wide power-supply range of 2.7-V to 15-V
single supply, and ±1.35-V to ±7.5-V dual supply.
Consuming only 750 μA with a unity gain bandwidth
of 90 MHz and a high 35-V/μs slew rate, the
THS4281 allows portable or other power-sensitive
applications to realize high performance with minimal
power. To ensure long battery life in portable
applications, the quiescent current is trimmed to be
less than 900 μA at +25°C, and 1 mA from –40°C to
+85°C.
Very Low Quiescent Current: 750 μA (at 5 V)
Rail-to-Rail Input and Output:
– Common-Mode Input Voltage Extends
400 mV Beyond the Rails
– Output Swings Within 150 mV From the Rails
Wide –3-dB Bandwidth at 5 V:
– 90 MHz at Gain = +1, 40 MHz at Gain = +2
High Slew Rate: 35 V/μs
Fast Settling Time (2-V Step):
– 78 ns to 0.1%
– 150 ns to 0.01%
Low Distortion at Gain = +2, VO = 2-VPP, 5 V:
– –91 dBc at 100 kHz, –67 dBc at 1 MHz
Input Offset Voltage: 2.5 mV (Max at +25°C)
Output Current > 30 mA (10-Ω Load, 5 V)
Low Voltage Noise of 12.5 nV/√Hz
Supply Voltages: +2.7 V, 3 V, +5 V, ±5 V, +15 V
Packages: SOT23, MSOP, and SOIC
The THS4281 is a true single-supply amplifier with a
specified common-mode input range of 400 mV
beyond the rails. This allows for high-side current
sensing applications without phase reversal
concerns. Its output swings to within 40 mV from the
rails with 10-kΩ loads, and 150 mV from the rails with
1-kΩ loads.
The THS4281 has a good 0.1% settling time of 78 ns,
and 0.01% settling time of 150 ns. The low THD of
–87 dBc at 100 kHz, coupled with a maximum offset
voltage of less than 2.5 mV, makes the THS4281 a
good match for high-resolution ADCs sampling less
than 2 MSPS.
2 Applications
•
•
•
•
•
Portable/Battery-Powered Applications
High Channel Count Systems
ADC Buffer
Active Filters
Current Sensing
The THS4281 is offered in a space-saving SOT23-5
package, a small MSOP-8 package, and the industry
standard SOIC-8 package.
Device Information(1)
PART NUMBER
THS4281
PACKAGE
BODY SIZE (NOM)
SOIC (8)
4.90 mm × 3.91 mm
SOT-23 (5)
2.90 mm × 1.60 mm
VSSOP (8)
3.00 mm × 3.00 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
High-side, Low Power Current-Sensing system
470 pF
V BAT
500 W
I
2.5 kW
RSENSE
0.2 W
+
470 pF
VBAT
100 W
-
500 W
Load
V OUT = I RSENSE
VBAT
THS4281
10 nF
+IN
ADS8320
-IN
2.5 kW
VBAT/2
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
THS4281
SLOS432B – APRIL 2004 – REVISED OCTOBER 2015
www.ti.com
Table of Contents
1
2
3
4
5
6
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
6.1
6.2
6.3
6.4
6.5
6.6
6.7
6.8
6.9
7
1
1
1
2
3
4
Absolute Maximum Ratings ..................................... 4
ESD Ratings ............................................................ 4
Recommended Operating Conditions....................... 4
Thermal Information .................................................. 4
Electrical Characteristics, VS = 3 V (VS+ = 3 V, VS– =
GND) .......................................................................... 5
Electrical Characteristics, VS = 5 V (VS+ = 5 V, VS– =
GND) .......................................................................... 7
Electrical Characteristics, VS = ±5 V......................... 9
Dissipation Ratings ................................................. 11
Typical Characteristics ............................................ 12
Detailed Description ............................................ 24
7.1 Overview ................................................................. 24
7.2 Feature Description................................................. 24
7.3 Device Functional Modes........................................ 25
8
Application and Implementation ........................ 26
8.1 Application Information............................................ 26
8.2 Typical Application ................................................. 27
9
Power Supply Recommendations...................... 29
9.1 Power-Supply Decoupling Techniques and
Recommendations ................................................... 29
10 Layout................................................................... 29
10.1 Layout Guidelines ................................................. 29
10.2 Layout Examples................................................... 30
10.3 Thermal Considerations ........................................ 31
11 Device and Documentation Support ................. 33
11.1
11.2
11.3
11.4
11.5
Documentation Support ........................................
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
33
33
33
33
33
12 Mechanical, Packaging, and Orderable
Information ........................................................... 33
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision A (November 2009) to Revision B
Page
•
Added Pin Configuration and Functions section, ESD Ratings table, Feature Description section, Device Functional
Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device
and Documentation Support section, and Mechanical, Packaging, and Orderable Information section .............................. 1
•
Removed the Packaging/Ordering Information table ............................................................................................................ 1
•
Removed Design Tools section ............................................................................................................................................. 1
•
Updated Thermal Values ....................................................................................................................................................... 1
•
Removed the Applications Section Contents section .......................................................................................................... 24
•
Removed the Bill of Materials section ................................................................................................................................. 24
Changes from Original (April 2004) to Revision A
Page
•
Updated document format to current standards..................................................................................................................... 1
•
Deleted Lead temperature specification from Absolute Maximum Ratings table................................................................... 4
•
Revised Driving Capacitive Loads section ........................................................................................................................... 26
•
Changed Board Layout section; revised statements in fourth recommendation about how to make connections to
other wideband devices on the board .................................................................................................................................. 29
2
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SLOS432B – APRIL 2004 – REVISED OCTOBER 2015
5 Pin Configuration and Functions
D and DGK Packages
8-Pin SOIC
Top View
NC
1
8
NC
IN−
2
7
VS+
IN+
3
6
VOUT
VS−
4
5
NC
DBV Package
5-Pin SOT-23
Top View
Note:
VOUT
1
VS−
2
IN+
3
5
VS+
4
IN−
NC Indicates there is no internal connection to these pins
Pin Functions
PIN
I/O
DESCRIPTION
SOIC,
VSSOP
SOT-23
NC
1
—
—
IN-
2
4
I
Negative input voltage pin
IN+
3
3
I
Positive input voltage pin
Vs-
4
2
I/O
NC
5
—
—
Vout
6
1
O
Output voltage pin
Vs+
7
5
I/O
Postive supply input voltage pin
NC
8
—
—
NAME
Negative supply input voltage pin
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SLOS432B – APRIL 2004 – REVISED OCTOBER 2015
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6 Specifications
6.1 Absolute Maximum Ratings
Over operating free-air temperature range (unless otherwise noted). (1)
MIN
MAX
UNIT
16.5
V
±VS ± 0.5
V
Supply voltage, VS– to VS+
Input voltage, VI
Differential input voltage, VID
Output current, IO
Continuous power dissipation
(2)
TJ
Maximum junction temperature, continuous operation, long-term reliability
(2)
TJ
Storage temperature, Tstg
(2)
V
±100
mA
See Dissipation Ratings
Table
Maximum junction temperature, any condition,
(1)
±2
+150
°C
125°
°C
150
°C
–65
The absolute maximum ratings under any condition is limited by the constraints of the silicon process. Stresses above these ratings may
cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are
stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied.
The maximum junction temperature for continuous operation is limited by package constraints. Operation above this temperature may
result in reduced reliability and/or lifetime of the device. recommended operating conditions.
6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
±3500
Charged-device model (CDM), per JEDEC specification JESD22C101 (2)
±1500
Machine Model (MM)
±100
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
Supply voltage, (VS+ and VS –)
Dual supply
Single supply
MIN
MAX
±1.35
±8.25
2.7
16.5
UNIT
V
6.4 Thermal Information
THS4281
THERMAL METRIC (1)
(2)
DBV (SOT-23)
D (SOIC)
DGK (VSSOP)
5 PINS
8 PINS
8 PINS
154.4
126.6
UNIT
RθJA
Junction-to-ambient thermal resistance
192.5
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
115
69
77.7
°C/W
RθJB
Junction-to-board thermal resistance
31.4
64.7
112.8
°C/W
ψJT
Junction-to-top characterization parameter
14.7
20.5
14.6
°C/W
ψJB
Junction-to-board characterization parameter
31
64.3
111.3
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
N/A
N/A
N/A
°C/W
(1)
(2)
4
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
This data was taken using the JEDEC standard High-K test PCB.
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SLOS432B – APRIL 2004 – REVISED OCTOBER 2015
6.5 Electrical Characteristics, VS = 3 V (VS+ = 3 V, VS– = GND)
At G = +2, RF = 2.49 kΩ, and RL = 1 kΩ to 1.5 V, TA = 25°C unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
AC PERFORMANCE
G = +1, VO = 100 mVPP, RF = 34 Ω
83
MHz
G = +2, VO = 100 mVPP, RF = 1.65 kΩ
40
MHz
G = +5, VO = 100 mVPP, RF = 1.65 kΩ
8
MHz
G = +10, VO = 100 mVPP, RF = 1.65 kΩ
3.8
MHz
0.1-dB Flat Bandwidth
G = +2, VO = 100 mVPP, RF = 1.65 kΩ
20
MHz
Full-Power Bandwidth
G = +2, VO = 2 VPP
8
MHz
G = +1, VO = 2-V Step
26
V/μs
G = –1, VO = 2-V Step
27
V/μs
Settling time to 0.1%
G = –1, VO = 1-V Step
80
ns
Settling time to 0.01%
G = –1, VO = 1-V Step
155
ns
Rise/Fall Times
G = +1, VO = 2-V Step
55
ns
Small-Signal Bandwidth
Slew Rate
AC PERFORMANCE— HARMONIC DISTORTION
Second Harmonic Distortion
Third Harmonic Distortion
THD + N
G = +2, VO = 2 VPP, f = 1 MHz, RL = 1 kΩ
–52
G = +2, VO = 2 VPP, f = 100 kHz, RL = 1 kΩ
–52
G = +2, VO = 2 VPP, f = 1 MHz, RL = 1 kΩ
–69
G = +2, VO = 2 VPP, f = 100 kHz, RL = 1 kΩ
–71
G = +2, VO = 2 VPP, VO = 1 VPP, f = 10 kHz
dBc
dBc
0.003%
G = +2, VO = 2 VPP, VO = 2 VPP, f = 10 kHz
0.03%
Differential Gain (NTSC/PAL)
G = +2, RL = 150 Ω
0.05/0.08
%
Differential Phase (NTSC/PAL)
G = +2, RL = 150 Ω
0.25/0.35
Input Voltage Noise
f = 100 kHz
12.5
nA/√Hz
Input Current Noise
f = 100 kHz
1.5
pA/√Hz
º
DC PERFORMANCE
Open-Loop Voltage Gain (AOL)
95
25°C
Input Offset Voltage
VCM = 1.5 V
Average Offset Voltage Drift
VCM = 1.5 V
Input Bias Current
VCM = 1.5 V
0.5
0°C to 70°C
3.5
–40°C to +85°C
3.5
0°C to 70°C
±7
–40°C to +85°C
±7
25°C
Average Bias Current Drift
VCM = 1.5 V
Input Offset Current
VCM = 1.5 V
Average Offset Current Drift
VCM = 1.5 V
dB
2.5
0.5
1
–40°C to +85°C
1
±2
–40°C to +85°C
±2
25°C
0.1
µV/°C
0.8
0°C to 70°C
0°C to 70°C
mV
µA
nA/°C
0.4
0°C to 70°C
0.5
–40°C to +85°C
0.5
0°C to 70°C
±2
–40°C to +85°C
±2
μA
nA/°C
INPUT CHARACTERISTICS
Common-Mode Input Range
Common-Mode Rejection Ratio
25°C
–0.3/3.3
0°C to 70°C
–0.1/3.1
–40°C to +85°C
–0.1/3.1
VCM = 0 V to 3 V
Input Resistance
Common-mode
Input Capacitance
Common-mode/Differential
25°C
75
0°C to 70°C
70
–40°C to +85°C
70
–0.4/3.4
V
92
dB
100
MΩ
0.8/1.2
pF
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Electrical Characteristics, VS = 3 V (VS+ = 3 V, VS– = GND) (continued)
At G = +2, RF = 2.49 kΩ, and RL = 1 kΩ to 1.5 V, TA = 25°C unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
OUTPUT CHARACTERISTICS
RL = 10 kΩ
Output Voltage Swing
Output Current (Sourcing)
Output Current (Sinking)
Output Impedance
0.04/2.96
25°C
RL = 1 kΩ
RL = 10 Ω
RL = 10 Ω
0.14/2.86
0°C to 70°C
0.2/2.8
–40°C to +85°C
0.2/2.8
25°C
18
0°C to 70°C
15
–40°C to +85°C
15
25°C
22
0°C to 70°C
19
–40°C to +85°C
19
V
0.1/2.9
V
23
mA
29
mA
f = 1 MHz
1
25°C
3
Ω
POWER SUPPLY
Maximum Operating Voltage
Minimum Operating Voltage
16.5
–40°C to +85°C
16.5
25°C
2.7
0°C to 70°C
2.7
–40°C to +85°C
2.7
25°C
Maximum Quiescent Current
V
0.75
0°C to 70°C
Power-Supply Rejection (–PSRR)
6
0.9
0.98
0.6
0°C to 70°C
0.57
–40°C to +85°C
0.55
VS+ = 3.25 V to 2.75 V, VS– = 0 V
VS+ = 3 V, VS– = 0 V to 0.65 V
mA
1
25°C
Power-Supply Rejection (+PSRR)
V
3
–40°C to +85°C
Minimum Quiescent Current
16.5
0°C to 70°C
25°C
70
0°C to 70°C
65
–40°C to +85°C
65
25°C
70
0°C to 70°C
65
–40°C to +85°C
65
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0.75
mA
90
dB
90
dB
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SLOS432B – APRIL 2004 – REVISED OCTOBER 2015
6.6 Electrical Characteristics, VS = 5 V (VS+ = 5 V, VS– = GND)
At G = +2, RF = 2.49 kΩ, and RL = 1 kΩ to 2.5 V, TA = 25°C unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
AC PERFORMANCE
Small-Signal Bandwidth
G = +1, VO = 100 mVPP, RF = 34 Ω
90
MHz
G = +2, VO = 100 mVPP, RF = 2 kΩ
40
MHz
G = +5, VO = 100 mVPP, RF = 2 kΩ
8
MHz
G = +10, VO = 100 mVPP, RF = 2 kΩ
3.8
MHz
0.1-dB Flat Bandwidth
G = +2, VO = 100 mVPP, RF = 2 kΩ
20
MHz
Full-Power Bandwidth
G = +2, VO = 2 VPP
9
MHz
G = +1, VO = 2-V Step
31
V/μs
G = –1, VO = 2-V Step
34
V/μs
Settling Time to 0.1%
G = –1, VO = 2-V Step
78
ns
Settling Time to 0.01%
G = –1, VO = 2-V Step
150
ns
Rise/Fall Times
G = +1, VO = 2-V Step
48
ns
Slew Rate
AC PERFORMANCE— HARMONIC DISTORTION
Second Harmonic Distortion
Third Harmonic Distortion
THD + N
Differential Gain (NTSC/PAL)
Differential Phase (NTSC/PAL)
G = +2, VO = 2 VPP, f = 1 MHz, RL = 1 kΩ
–67
G = +2, VO = 2 VPP, f = 100 kHz, RL = 1 kΩ
–92
G = +2, VO = 2 VPP, f = 1 MHz, RL = 1 kΩ
dBc
–76
G = +2, VO = 2 VPP, f = 100 kHz, RL = 1 kΩ
–106
G = +2, VO = 2 VPP, VO = 2 VPP, f = 10 kHz
0.0009%
G = +2, VO = 2 VPP, VO = 4 VPP, f = 10 kHz
dBc
0.0005%
0.11/0.17%
G = +2, RL = 150 Ω
0.11/0.14
º
Input Voltage Noise
f = 100 kHz
12.5
nV/√Hz
Input Current Noise
f = 100 kHz
1.5
pA/√Hz
DC PERFORMANCE
Open-Loop Voltage Gain (AOL)
25°C
85
0°C to 70°C
80
–40°C to +85°C
80
25°C
Input Offset Voltage
VCM = 2.5 V
Average Offset Voltage Drift
VCM = 2.5 V
Input Bias Current
VCM = 2.5 V
105
dB
2.5
3.5
–40°C to +85°C
3.5
0°C to 70°C
±7
–40°C to +85°C
±7
25°C
0.5
0°C to 70°C
VCM = 2.5 V
Input Offset Current
VCM = 2.5 V
Average Offset Current Drift
VCM = 2.5 V
mV
µV/°C
0.8
1
–40°C to +85°C
Average Bias Current Drift
0.5
0°C to 70°C
µA
1
0°C to 70°C
±2
–40°C to +85°C
±2
25°C
0.1
nA/°C
0.4
0°C to 70°C
0.5
–40°C to +85°C
0.5
0°C to 70°C
±2
–40°C to +85°C
±2
µA
nA/°C
INPUT CHARACTERISTICS
Common-Mode Input Range
25°C
–0.4/5.4
0°C to 70°C
–0.1/5.1
–40°C to +85°C
–0.1/5.1
–0.3/5.3
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Electrical Characteristics, VS = 5 V (VS+ = 5 V, VS– = GND) (continued)
At G = +2, RF = 2.49 kΩ, and RL = 1 kΩ to 2.5 V, TA = 25°C unless otherwise noted.
PARAMETER
Common-Mode Rejection Ratio
TEST CONDITIONS
MIN
TYP
25°C
85
100
0°C to 70°C
80
–40°C to +85°C
80
VCM = 0 V to 5 V
Input Resistance
Common-mode
Input Capacitance
Common-mode/Differential
MAX
UNIT
dB
100
MΩ
0.8/1.2
pF
0.04/4.96
V
OUTPUT CHARACTERISTICS
RL = 10 kΩ
Output Voltage Swing
Output Current (Sourcing)
Output Current (Sinking)
25°C
RL = 1 kΩ
RL = 10 Ω
RL = 10 Ω
0.2/4.8
0°C to 70°C
0.25/4.75
–40°C to +85°C
0.25/4.75
25°C
24
0°C to 70°C
20
–40°C to +85°C
20
25°C
30
0°C to 70°C
25
–40°C to +85°C
25
25°C
Output Impedance
f = 1 MHz
0.15/4.85
V
33
mA
44
mA
1
Ω
0°C to 70°C
–40°C to +85°C
POWER SUPPLY
25°C
Maximum Operating Voltage
Minimum Operating Voltage
5
16.5
–40°C to +85°C
16.5
25°C
2.7
0°C to 70°C
2.7
–40°C to +85°C
2.7
25°C
Maximum Quiescent Current
V
0.75
0°C to 70°C
Power-Supply Rejection (–PSRR)
8
0.9
0.98
mA
1.0
25°C
Power-Supply Rejection (+PSRR)
V
5
–40°C to +85°C
Minimum Quiescent Current
16.5
0°C to 70°C
0.6
0°C to 70°C
0.57
–40°C to +85°C
0.55
VS+ = 5.5 V to 4.5 V, VS– = 0
V
VS+ = 5 V, VS– = 0 V to 1.0 V
25°C
80
0°C to 70°C
75
–40°C to +85°C
75
25°C
80
0°C to 70°C
75
–40°C to +85°C
75
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0.75
mA
100
dB
100
dB
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SLOS432B – APRIL 2004 – REVISED OCTOBER 2015
6.7 Electrical Characteristics, VS = ±5 V
At G = +2, RF = 2.49 kΩ, and RL = 1 kΩ, unless otherwise noted
PARAMETER
TEST CONDITIONS
MIN
TYP MAX
UNIT
AC PERFORMANCE
Small-Signal Bandwidth
G = +1, VO = 100 mVPP, RF = 34 Ω
95
MHz
G = +2, VO = 100 mVPP
40
MHz
G = +5, VO = 100 mVPP
8
MHz
G = +10, VO = 100 mVPP
3.8
MHz
0.1-dB Flat Bandwidth
G = +2, VO = 100 mVPP
20
MHz
Full-Power Bandwidth
G = +1, VO = 2 VPP
9.5
MHz
G = +1, VO = 2-V Step
35
V/μs
G = –1, VO = 2-V Step
35
V/μs
Settling Time to 0.1%
G = –1, VO = 2-V Step
78
ns
Settling Time to 0.01%
G = –1, VO = 2-V Step
140
ns
Rise/Fall Times
G = +1, VO = 2-V Step
45
ns
Slew Rate
AC PERFORMANCE— HARMONIC DISTORTION
Second Harmonic Distortion
Third Harmonic Distortion
G = +2, VO = 2 VPP, f = 1 MHz, RL = 1 kΩ
–69
G = +2, VO = 2 VPP, f = 100 kHz, RL = 1 kΩ
–76
G = +2, VO = 2 VPP, f = 1 MHz, RL = 1 kΩ
–93
G = +2, VO = 2 VPP, f = 100 kHz, RL = 1 kΩ
THD + N
dBc
dBc
–107
G = +2, VO = 2 VPP, VO = 2 VPP, f = 10 kHz
0.0009
G = +2, VO = 2 VPP, VO = 4 VPP, f = 10 kHz
0.0003%
G = +2, RL = 150 Ω
0.03/0.03
%
Differential Gain (NTSC/PAL)
Differential Phase (NTSC/PAL)
0.08/0.1
º
Input Voltage Noise
f = 100 kHz
12.5
nV/√Hz
Input Current Noise
f = 100 kHz
1.5
pA/√Hz
DC PERFORMANCE
Open-Loop Voltage Gain (AOL)
25°C
90
0°C to 70°C
85
–40°C to +85°C
Input Offset Voltage
Average Offset Voltage Drift
VCM = 0 V
Input Bias Current
VCM = 0 V
Average Bias Current Drift
VCM = 0 V
Input Offset Current
VCM = 0 V
Average Offset Current Drift
VCM = 0 V
dB
85
25°C
VCM = 0 V
108
0.5
2.5
0°C to 70°C
3.5
–40°C to +85°C
3.5
0°C to 70°C
±7
–40°C to +85°C
±7
25°C
0.5
μV/°C
0.8
0°C to 70°C
1
–40°C to +85°C
1
0°C to 70°C
±2
–40°C to +85°C
±2
25°C
0.1
0.4
0.5
–40°C to +85°C
0.5
±2
–40°C to +85°C
±2
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0°C to 70°C
0°C to 70°C
mV
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Electrical Characteristics, VS = ±5 V (continued)
At G = +2, RF = 2.49 kΩ, and RL = 1 kΩ, unless otherwise noted
PARAMETER
TEST CONDITIONS
MIN
TYP MAX
25°C
±5.3
±5.4
0°C to 70°C
±5.1
UNIT
INPUT CHARACTERISTICS
Common-Mode Input Range
–40°C to +85°C
Common-Mode Rejection Ratio
VCM = –5 V to +5 V
Input Resistance
Common-mode
Input Capacitance
Common-mode/Differential
V
±5.1
25°C
90
0°C to 70°C
85
–40°C to +85°C
85
107
dB
100
MΩ
0.8/1.2
pF
±4.93
V
OUTPUT CHARACTERISTICS
RL = 10 kΩ
Output Voltage Swing
Output Current (Sourcing)
Output Current (Sinking)
Output Impedance
RL = 1 kΩ
RL = 10 Ω
RL = 10 Ω
25°C
±4.6
0°C to 70°C
±4.5
–40°C to +85°C
±4.5
25°C
35
0°C to 70°C
30
–40°C to +85°C
30
25°C
45
0°C to 70°C
40
–40°C to +85°C
40
f = 1 MHz
±4.8
V
48
mA
60
mA
Ω
1
POWER SUPPLY
Maximum Operating Voltage
Minimum Operating Voltage
Maximum Quiescent Current
±5
25°C
0°C to 70°C
±8.2
5
–40°C to +85°C
±8.2
5
25°C
±1.35
0°C to 70°C
±1.35
–40°C to +85°C
±1.35
25°C
V
0.8
25°C
0.67
0°C to 70°C
0.62
10
0.8
mA
0.6
VS+ = 5.5 V to 4.5 V, VS– = 5.0 V 25°C
VS+ = 5 V, VS– = –5.5 V to –4.5
V
mA
1.05
–40°C to +85°C
Power-Supply Rejection (–PSRR)
0.93
1.0
–40°C to +85°C
Power-Supply Rejection (+PSRR)
V
±5
0°C to 70°C
Minimum Quiescent Current
±8.2
5
80
0°C to 70°C
75
–40°C to +85°C
75
25°C
80
0°C to 70°C
75
–40°C to +85°C
75
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100
dB
100
dB
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6.8 Dissipation Ratings
PACKAGE
(1)
POWER RATING (1)
TA < +25°C
TA = +85°C
DBV (5)
391 mW
156 mW
D (8)
1.02 W
410 mW
DGK (8)
553 mW
221 mW
Power rating is determined with a junction temperature of +125°C. This is the point where distortion starts to substantially increase.
Thermal management of the final PCB should strive to keep the junction temperature at or below +125°C for best performance and long
term reliability.
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6.9 Typical Characteristics
VS = 3 V
Figure 1. Quiescent Current vs Supply Voltage
Figure 2. Input Offset Voltage vs Common-mode Input
Voltage
VS = 15 V
VS = ±5 V
12
VS = 5 V
Figure 3. Input Offset Voltage vs Common-Mode Input
Voltage
Figure 4. Input Offset Voltage vs Common-Mode Input
Voltage
Figure 5. Positive Voltage Headroom vs Source Current
Figure 6. Negative Voltage Headroom vs Sink Current
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Typical Characteristics (continued)
VS = 5 V
VS = ±5 V
Figure 7. Output Voltage vs Load Resistance
Figure 8. Output Voltage vs Load Resistance
6
Gain = 1,
RF = 34 W,
RL = 1 kW,
VO = 100 mVPP
5
Signal Gain − dB
4
3
VS = 15 V
VS = 2.7 V
VS = 5 V
2
VS = ±5 V
1
0
−1
−2
−3
−4
1
VS = 15 V)
10
100
f − Frequency − MHz
Figure 9. Output Voltage vs Load Resistance
Figure 10. Frequency Response
9
RF = 4 kW
Signal Gain − dB
6
RF = 1.65 kW
RF = 1 kW
3
0
VS = 2.7 V
Gain = 2,
RL = 1 kW,
VO = 0.1 VPP
−3
0.1
1
10
f − Frequency − MHz
100
VS = 3 V
VS = 2.7 V
Figure 11. Frequency Response
Figure 12. Frequency Response
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Typical Characteristics (continued)
VS = ±5 V
VS = 5 V
Figure 14. Frequency Response
Figure 13. Frequency Response
VS = 2.7 V
VS = 3 V
VS = 5 V, ±5 V, 15
V
Figure 16. 0.1-dB Frequency Response
Figure 15. 0.1-dB Frequency Response
24
VS = 2.7 V,
RF = 1.65 kW,
RL = 1 kW,
VO = 0.1 VPP
G = 10
Signal Gain − dB
20
16
G=5
12
8
G=2
4
G = −1
0
−4
0.1
1
10
100
f − Frequency − MHz
VS = 3 V
VS = 2.7 V
Figure 17. Frequency Response
14
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Figure 18. Frequency Response
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Typical Characteristics (continued)
VS = 5 V
VS = ±5 V
Figure 19. Frequency Response
VS = 15 V
Figure 20. Frequency Response
VS = 2.7 V
Figure 21. Frequency Response
VS = 5 V
Figure 22. Large-Signal Frequency Response
VS = ±5 V
Figure 23. Large-Signal Frequency Response
Figure 24. Large-Signal Frequency Response
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Typical Characteristics (continued)
Figure 25. Open-Loop Gain vs Frequency
Figure 26. Output Impedance vs Frequency
Figure 27. Rejection Ratio vs Frequency
Figure 28. Noise vs Frequency
VS = 5 V
VS = 2.7 V
Figure 30. Slew Rate
Figure 29. Slew Rate
16
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Typical Characteristics (continued)
VS = ±5 V
VS = 15 V
Figure 31. Slew Rate
VS = ±1.35 V
Figure 32. Slew Rate
VS = ±1.35 V
Figure 33. Settling Time
Figure 34. Settling Time
VS = ±2.5 V
VS = ±2.5 V
Figure 36. Settling Time
Figure 35. Settling Time
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Typical Characteristics (continued)
VS = ±5 V
VS = ±5 V
Figure 38. Settling Time
Figure 37. Settling Time
Gain = +1
Gain = +1
Figure 39. Harmonic Distortion vs Frequency
Gain = +2
VS = 3 V, 3.3 V
Figure 41. Harmonic Distortion vs Frequency
18
Figure 40. Harmonic Distortion vs Frequency
Figure 42. Harmonic Distortion vs Frequency
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Typical Characteristics (continued)
Gain = +2
Figure 43. Harmonic Distortion vs Frequency
Figure 44. Harmonic Distortion vs Load Resistance
VS = 3 V, ±5 V
\
VS = 2.7 V, 5 V
Figure 45. Harmonic Distortion vs Output Voltage
VS = 3.3 V, 15 V
Figure 46. Harmonic Distortion vs Output Voltage
VS = 2.7 V
Figure 47. Harmonic Distortion vs Output Voltage
Figure 48. Total Harmonic Distortion + Noise vs Frequency
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Typical Characteristics (continued)
VS = 5 V
VS = 3 V
Figure 49. Total Harmonic Distortion + Noise vs Frequency
Figure 50. Total Harmonic Distortion + Noise vs Frequency
VS = 15 V
VS = ±5 V
Figure 51. Total Harmonic Distortion + Noise vs Frequency
Figure 52. Total Harmonic Distortion + Noise vs Frequency
f = 1 kHz
f = 10 kHz
Figure 53. Total Harmonic Distortion + Noise vs Output
Voltage
20
Figure 54. Total Harmonic Distortion + Noise vs Output
Voltage
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Typical Characteristics (continued)
0.8
PAL
0.7
Differential Gain − %
0.6
0.5
NTSC
0.4
0.3
Gain = 2
RF= 2.5 kW
VS = 5 V
40 IRE − NTSC and Pal
Worst Case ±100 IRE Ramp
0.2
0.1
0
1
f = 100 kHz
2
3
Number of Loads − 150 W
VS = 5 V
Figure 55. Total Harmonic Distortion + Noise vs Output
Voltage
Figure 56. Differential Gain vs Number of Loads
2
1.6
1.8
1.4
PAL
1.6
°
Differential Gain − %
Differential Phase −
NTSC
1.4
1.2
1
0.8
0.6
Gain = 2
Rf = 2.5 kW
VS = 5 V
40 IRE − NTSC and Pal
Worst Case ±100 IRE Ramp
0.4
0.2
0
1
2
Number of Loads − 150 W
PAL
1.2
1
0.8
NTSC
0.6
Gain = 2
RF= 2.5 kW
VS = ±5 V
40 IRE − NTSC and Pal
Worst Case ±100 IRE Ramp
0.4
0.2
0
3
1
2
3
Number of Loads − 150 W
VS = ±5 V
VS = 5 V
Figure 57. Differential Phase vs Number of Loads
Figure 58. Differential Gain vs Number of Loads
1.6
1.4
PAL
Differential Phase −
°
1.2
1
NTSC
0.8
0.6
Gain = 2
Rf = 2.5 kW
VS = ±5 V
40 IRE − NTSC and Pal
Worst Case ±100 IRE Ramp
0.4
0.2
0
1
2
Number of Loads − 150 W
3
VS = ±5 V
Figure 59. Differential Phase vs Number of Loads
Figure 60. Input Offset Voltage vs Temperature
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Typical Characteristics (continued)
VS = 15 V
VS = 5 V
Figure 61. Input Bias and Offset Current vs Temperature
Figure 62. Input Bias and Offset Current vs Temperature
Figure 63. Small-Signal Transient Response
Figure 64. Large-Signal Transient Response
VS = 5 V
VS = ±5 V
Figure 65. Overdrive Recovery Time
22
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Figure 66. Overdrive Recovery Time
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Typical Characteristics (continued)
Figure 67. Overdrive Response Output Voltage vs Time
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7 Detailed Description
7.1 Overview
7.1.1 High-Speed Operational Amplifiers
The THS4281 is a unity gain stable, rail-to-rail input and output, voltage-feedback operational amplifier designed
to operate from a single 2.7-V to 16.5-V power supply.
7.2 Feature Description
7.2.1 Wideband, Noninverting Operation
Figure 68 shows the noninverting gain configuration of 2 V/V used to demonstrate the typical performance
curves.
Voltage feedback amplifiers can use a wide range of resistors values to set their gain with minimal impact on
frequency response. Larger-valued resistors decrease loading of the feedback network on the output of the
amplifier, but may cause peaking and instability. For a gain of +2, feedback resistor values between 1 kΩ and 4
kΩ are recommended for most applications. However, as the gain increases, the use of even higher feedback
resistors can be used to conserve power. This is due to the inherent nature of amplifiers becoming more stable
as the gain increases, at the expense of bandwidth. Figure 73 and Figure 74 show the THS4281 using feedback
resistors of 10 kΩ and 100 kΩ. Be cautioned that using such high values with high-speed amplifiers is not
typically recommended, but under certain conditions, such as high gain and good high-speed printed circuit
board (PCB) layout practices, such resistances can be used.
+VS
+
0.1 µF 6.8 µF
50-W Source
+
VI
49.9 W
VO
_
Rf
2.49 kW
To Load
2.49 kW
Rg
0.1 µF 6.8 µF
+
−VS
Figure 68. Wideband, Noninverting Gain Configuration
7.2.2 Wideband, Inverting Operation
Figure 69 shows a typical inverting configuration where the input and output impedances and noise gain from
Figure 68 are retained with an inverting circuit gain of –1 V/V.
24
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Feature Description (continued)
+VS
+
0.1 µF
6.8 µF
+
RT
1.24 kW
CT
0.1 µF
VO
_
To Load
50-W Source
Rg
VI
Rf
2.49 kW
RM
51.1 W
2.49 kW
0.1 µF
6.8 µF
+
−VS
Figure 69. Wideband, Inverting Gain Configuration
In the inverting configuration, some key design considerations must be noted. One is that the gain resistor (Rg)
becomes part of the signal channel input impedance. If the input impedance matching is desired (which is
beneficial whenever the signal is coupled through a cable, twisted pair, long PCB trace, or other transmission line
conductors), Rg may be set equal to the required termination value and Rf adjusted to give the desired gain.
However, care must be taken when dealing with low inverting gains, as the resulting feedback resistor value can
present a significant load to the amplifier output. For example, an inverting gain of 2, setting Rg to 49.9 Ω for
input matching, eliminates the need for RM but requires a 100-Ω feedback resistor. The 100-Ω feedback resistor,
in parallel with the external load, causes excessive loading on the amplifier output. To eliminate this excessive
loading, it is preferable to increase both Rg and Rf values, as shown in Figure 69, and then achieve the input
matching impedance with a third resistor (RM) to ground. The total input impedance is the parallel combination of
Rg and RM.
Another consideration in inverting amplifier design is setting the bias current cancellation resistor (RT) on the
noninverting input. If the resistance is set equal to the total dc resistance presented to the device at the inverting
terminal, the output dc error (due to the input bias currents) is reduced to the input offset current multiplied by RT.
In Figure 69, the dc source impedance presented at the inverting terminal is 2.49 kΩ || (2.49 kΩ + 25.3 Ω) ≈ 1.24
kΩ. To reduce the additional high-frequency noise introduced by the resistor at the noninverting input, RT is
bypassed with a 0.1-μF capacitor to ground (CT).
7.3 Device Functional Modes
This device has no specific function modes.
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8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
8.1.1 Single-Supply Operation
The THS4281 is designed to operate from a single 2.7-V to 16.5-V power supply. When operating from a single
power supply, care must be taken to ensure the input signal and amplifier are biased appropriately to allow for
the maximum output voltage swing and not violate VICR. The circuits shown in Figure 70 shows inverting and
noninverting amplifiers configured for single-supply operation.
+VS
50-W Source
+
VI
RT
49.9 W
VO
_
To Load
+VS
Rf
2
Rg
2 kW
2 kW
Power Supply Bypassing
Not Shown For Simplicity
+VS
2
Rf
VS
2 kW
50-W Source
Rg
VI
RT
51.1 W
_
2 kW
+VS
+VS
2
2
RT
+
VO
To Load
CT
Figure 70. DC-Coupled Single Supply Operation
8.1.2 Driving Capacitive Loads
One of the most demanding, and yet common, load conditions for an op amp is capacitive loading. Often, the
capacitive load is the input of an A/D converter, including additional external capacitance, which may be
recommended to improve A/D linearity. A high-speed, high open-loop gain amplifier like the THS4281 can be
susceptible to instability and peaking when a capacitive load is placed directly on the output. When the amplifier
open-loop output resistance is considered, this capacitive load introduces an additional pole in the feedback path
that decreases the phase margin. When the primary considerations are frequency response flatness, pulse
response fidelity, or distortion, a simple and effective solution is to isolate the capacitive load from the feedback
loop by inserting a small series isolation resistor (for example, R(ISO) = 100 Ω for CLOAD = 10 pF to R(ISO) = 10 Ω
for CLOAD = 1000 pF) between the amplifier output and the capacitive load.
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8.2 Typical Application
2 kW
2.05 kW
2 kW
270 pF
5V
_
649
VO
2.61 kW
+
VI
1.5 nF
1 nF
RL
1 kW
−5V
1.02 kW
2.1 kW
VI
5V
_
VO
+
2.2 nF
−5V
Figure 71. Second-Order Sallen-Key 100-kHz Butterworth
Filter, Gain = 2 V/V
RL
1 kW
Figure 72. Second-Order MFB 100-kHz Butterworth Filter,
Gain = 2 V/V
8.2.1 Design Requirements
Table 1 shows example design parameters and values for the typical application design example in Figure 71.
Table 1. Design Parameters
DESIGN PARAMETERS
VALUE
Supply voltage
±5 V
Amplifier topology
Voltage feedback
Gain
2 V/V
Filter requirement
Second Order 100 KHz Sallen- Key
Butterworth Filter
Input/Output Requirements
Rail to Rail
8.2.2 Detailed Design Procedure
8.2.2.1 Active Filtering With the THS4281
High-performance active filtering with the THS4281 is achievable due to the amplifier's good slew rate, wide
bandwidth, and voltage-feedback architecture. Several options are available for high-pass, low-pass, bandpass,
and bandstop filters of varying orders. Filters can be quite complex and time consuming to design. Several books
and application reports are available to help design active filters. But, to help simplify the process and minimize
the chance of miscalculations, Texas Instruments has developed a filter design program called FilterPro™.
FilterPro is available for download at no cost from TI's web site (www.ti.com).
The two most common low-pass filter circuits used are the Sallen-Key filter and the Multiple Feedback (MFB) –
aka Rauch filter. FilterPro was used to determine a 2-pole Butterworth response filter with a corner (–3-dB)
frequency of 100 kHz, which is shown in Figure 71 and Figure 72. One of the advantages of the MFB filter, a
much better high-frequency rejection, is clearly shown in the response shown in Figure 75. This is due to the
inherent R-C filter to ground being the first elements in the design of the MFB filter. The Sallen-Key design also
has an R-C filter, but the capacitor connects directly to the output. At very high frequencies, where the amplifier's
access loop gain is decreasing, the ability of the amplifier to reject high frequencies is severely reduced and
allows the high-frequency signals to pass through the system. One other advantage of the MFB filter is the
reduced sensitivity in component variation. This is important when using real-world components where capacitors
can easily have ±10% variations.
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8.2.3 Application Curves
24
24
RF = 100 kW
RF = 1.65 kW
and 10 kW
16
12
8
VS = 3 V
Gain = 10,
RL = 1 kW,
VO = 0.1 VPP
4
1
RF = 2.5 kW
and 10 kW
16
12
8
VS = ±5 V
Gain = 10,
RL = 1 kW,
VO = 0.1 VPP
4
0
0.1
RF = 100 kW
20
Signal Gain − dB
Signal Gain − dB
20
10
100
0
0.1
1
10
f − Frequency − MHz
f − Frequency − MHz
Figure 73. Signal Gain vs
Frequency, VS = 3 V
Figure 74. Signal Gain vs
Frequency, VS = ±5 V
100
Figure 75. Second-Order 100-kHz Active Filter Response
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9 Power Supply Recommendations
9.1 Power-Supply Decoupling Techniques and Recommendations
Power-supply decoupling is a critical aspect of any high-performance amplifier design. Careful decoupling
provides higher quality ac performance. The following guidelines ensure the highest level of performance.
1. Place decoupling capacitors as close to the power-supply inputs as possible, with the goal of minimizing the
inductance.
2. Placement priority should put the smallest valued capacitors closest to the device.
3. Use of solid power and ground planes is recommended to reduce the inductance along power-supply return
current paths (with the exception of the areas underneath the input and output pins as noted below).
4. A bulk decoupling capacitor is recommended (6.8 μF to 22 μF) within 1 inch, and a ceramic (0.1 μF) within
0.1 inch of the power input pins.
NOTE
The bulk capacitor may be shared by other operational amplifiers.
10 Layout
10.1 Layout Guidelines
Achieving optimum performance with a high-frequency amplifier like the THS4281 requires careful attention to
board layout parasitics and external component types. See the EVM layout figures (Figure 76 to Figure 79) in the
Design Tools section.
Recommendations that optimize performance include:
1. Minimize parasitic capacitance to any ac ground for all of the signal I/O pins. Parasitic capacitance on
the output and inverting input pins can cause instability and on the noninverting input, it can react with the
source impedance to cause unintentional band limiting. To reduce unwanted capacitance, a window around
the signal I/O pins should be opened in all of the ground and power planes around those pins. Otherwise,
ground and power planes should be unbroken elsewhere on the board.
2. Minimize the distance (< 0.1 inch) from the power-supply pins to high-frequency, 0.1-μF decoupling
capacitors. Avoid narrow power and ground traces to minimize inductance. The power-supply connections
should always be decoupled as described above.
3. Careful selection and placement of external components preserves the high-frequency performance
of the THS4281. Resistors should be a low reactance type. Surface-mount resistors work best and allow a
tighter overall layout. Metal-film, axial-lead resistors can also provide good high-frequency performance.
Again, keep the leads and PCB trace length as short as possible. Never use wire-wound type resistors in a
high-frequency application. Because the output pin and inverting input pin are the most sensitive to parasitic
capacitance, always position the feedback and series output resistor, if any, as close as possible to the
output pin. Other network components, such as noninverting input termination resistors, should also be
placed close to the package. Excessively high resistor values can create significant phase lag that can
degrade performance. Keep resistor values as low as possible, consistent with load-driving considerations. It
is suggested that a good starting point for design is to set the Rf to 2 kΩ for low-gain, noninverting
applications. Doing this automatically keeps the resistor noise terms reasonable and minimizes the effect of
parasitic capacitance.
4. Connections to other wideband devices on the board should be made with short direct traces or
through onboard transmission lines. For short connections, consider the trace and the input to the next
device as a lumped capacitive load. Relatively wide traces (50 mils to 100 mils) should be used, preferably
with ground and power planes opened up around them. Low parasitic capacitive loads (< 4 pF) may not need
an R(ISO), because the THS4281 is nominally compensated to operate at unity gain (+1 V/V) with a 2-pF
capacitive load. Higher capacitive loads without an R(ISO) are allowed as the signal gain increases. If a long
trace is required, and the 6-dB signal loss intrinsic to a doubly terminated transmission line is acceptable,
implement a matched impedance transmission line using microstrip or stripline techniques (consult an ECL
design handbook for microstrip and stripline layout techniques). A matching series resistor into the trace from
the output of the THS4281 is used as well as a terminating shunt resistor at the input of the destination
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Layout Guidelines (continued)
device. Remember also that the terminating impedance is the parallel combination of the shunt resistor and
the input impedance of the destination device: this total effective impedance should be set to match the trace
impedance. If the 6-dB attenuation of a doubly-terminated transmission line is unacceptable, a long trace can
be series-terminated at the source end only. Treat the trace as a capacitive load in this case, and use a
series resistor (R(ISO) = 10 Ω to 100 Ω, as noted Driving Capacitive Loads) to isolate the capacitive load. If
the input impedance of the destination device is low, there is signal attenuation due to the voltage divider
formed by R(ISO) into the terminating impedance. A 50-Ω environment is normally not necessary onboard,
and in fact a higher impedance environment improves distortion as shown in the distortion versus load plots.
5. Socketing a high-speed part like the THS4281 is not recommended. The additional lead length and pinto-pin capacitance introduced by the socket can create a troublesome parasitic network which can make it
almost impossible to achieve a smooth, stable frequency response. Best results are obtained by soldering
the THS4281 onto the board.
10.2 Layout Examples
TOP
Figure 76. THS4281EVM Layout (Top Layer and Silkscreen
Layer)
30
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Layer 2 − GND
Figure 77. THS4281EVM Board Layout
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SLOS432B – APRIL 2004 – REVISED OCTOBER 2015
Layout Examples (continued)
Layer 3 − GND
Figure 78. THS4281EVM Board Layout
BOTTOM
Figure 79. THS4281EVM Board Layout
10.3 Thermal Considerations
The THS4281 does not incorporate automatic thermal shutoff protection, so the designer must take care to
ensure that the design does not violate the absolute maximum junction temperature of the device. Failure may
result if the absolute maximum junction temperature of +150°C is exceeded. For long-term dependability, the
junction temperature should not exceed +125°C.
The thermal characteristics of the device are dictated by the package and the PCB. Maximum power dissipation
for a given package can be calculated using the following formula.
PDmax = (Tmax - TA) / θJA
where
•
•
•
•
•
•
PDmax is the maximum power dissipation in the amplifier (W).
Tmax is the absolute maximum junciton temperature (ºC).
TA is the ambient temperature (ºC).
θJA = θJC + θCA
θJC is the thermal coefficient from the silicon junctions to the case (ºC/W).
θJA is the thermal coefficient from the case to ambient air (ºC/W).
(1)
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Thermal Considerations (continued)
P D − Maximum Power Dissipation − W
1.8
1.6
8-pin SOIC (D) Package
1.4
8-pin MSOP
(DGK) Package
1.2
1
0.8
0.6
0.4
0.2
0
−40
5-pin SOT23
(DBV) Package
−20
0
20
40
60
80
TA − Free-Air Temperature − °C
100
ΘJA = 97.5°C/W for 8-Pin SOIC (D)
ΘJA = 180.8°C/W for 8-Pin MSOP (DGK)
ΘJA = 255.4°C/W for 5-Pin SOT−23 (DBV)
TJ = 125°C, No Airflow
Figure 80. Maximum Power Dissipation vs Ambient Temperature
When determining whether or not the device satisfies the maximum power dissipation requirement, it is important
to consider not only quiescent power dissipation, but also dynamic power dissipation. Often maximum power
dissipation is difficult to quantify because the signal pattern is inconsistent, but an estimate of the RMS value can
provide a reasonable analysis.
32
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SLOS432B – APRIL 2004 – REVISED OCTOBER 2015
11 Device and Documentation Support
11.1 Documentation Support
11.1.1 Related Documentation
For related documentation, see the following:
• PowerPAD Made Easy, application brief (SLMA004)
• PowerPAD Thermally Enhanced Package, technical brief (SLMA002)
• Active Low-Pass Filter Design, application report (SLOA049)
• FilterPro MFB and Sallen-Key Low-Pass Filter Design Program, application report (SBFA001)
11.2 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
11.3 Trademarks
FilterPro, E2E are trademarks of Texas Instruments.
All other trademarks are the property of their respective owners.
11.4 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
11.5 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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33
PACKAGE OPTION ADDENDUM
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13-Aug-2021
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
THS4281D
ACTIVE
SOIC
D
8
75
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
4281
THS4281DBVR
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
AON
THS4281DBVRG4
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
AON
THS4281DBVT
ACTIVE
SOT-23
DBV
5
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
AON
THS4281DGK
ACTIVE
VSSOP
DGK
8
80
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
AOO
THS4281DGKR
ACTIVE
VSSOP
DGK
8
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
AOO
THS4281DR
ACTIVE
SOIC
D
8
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
4281
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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