THS7318YZFT

THS7318 www.ti.com SLOS517C – JANUARY 2007 – REVISED DECEMBER 2007 3-Channel Low-Power EDTV/SDTV Video Line Driver With Low-Pass Filters FEATURES 1 • • • • • • • 2 Single Supply: 2.85 V to 5 V Low Total Supply Current = 4.5 mA (max) Low Power Mode: 5 µW (max) Integrated DAC Reconstruction Filters Video Line Driver Outputs with 6 dB Gain Rail-to-Rail Output RoHS Compliant 9-Pin Wafer Scale Package APPLICATIONS • • • • Personal Media Players Digital Cameras Cellular Phone Video Output Buffering USB/Portable Low Power Video Buffering DESCRIPTION The THS7318 is a very low power single-supply 3 channel device designed to process Y’, P’B, P’R enhanced definition TV and Y’, C’, and CVBS standard definition TV signals. It integrates circuitry to perform signal processing commonly required in video output applications. All channels incorporate 3rd-order 20-MHz Butterworth DAC reconstruction filters designed for video systems with 54 MSPS DAC sampling rates like NTSC/PAL 480p/576p EDTV and 480i/576i SDTV video. Rail-to-Rail output drivers on all channels allow for both ac and dc coupled outputs. The low quiescent current makes it an excellent choice for USB powered or portable video applications. The THS7318 is available in a 9-pin NanoFree™ wafer scale package. It is specified for operation from –40°C to +85°C. THS7318 BLOCK DIAGRAM - + Y’ IN LPF 6 dB Y’ OUT LPF 6 dB PB’ OUT / CVBS OUT LPF 6 dB PR’ OUT / C’ OUT DC Offset - PB’ IN / CVBS IN + DC Offset - PR’ IN / C’ IN + DC Offset EN Bias Control GND 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. NanoFree is a trademark of Texas Instruments. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2007, Texas Instruments Incorporated THS7318 www.ti.com SLOS517C – JANUARY 2007 – REVISED DECEMBER 2007 This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. ABSOLUTE MAXIMUM RATINGS over operating free-air temperature range (unless otherwise noted) (1) VSS Supply voltage, VS+ to GND VI Input voltage IO Output current Continuous power dissipation Maximum junction temperature Tstg Storage temperature range TA Ambient operating temperature range ESD ratings (2) (3) UNIT 5.5 V –0.4 to VS+ V ±100 mA See Dissipation Rating Table Any condition TJ (1) VALUE (2) Continuous operation, long term reliability (3) 150 °C 125 °C –65 to 150 °C –40 to 85 °C HBM 2000 V CDM 1500 V MM 200 V Stresses above those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied Exposure to absolute maximum rated conditions for extended periods may degrade device reliability. The absolute maximum junction temperature under any condition is limited by the constraints of the silicon process. The absolute maximum junction temperature for continuous operation is limited by the package constraints. Operation above this temperature may result in reduced reliability and/or lifetime of the device. DISSIPATION RATINGS (1) PACKAGE θJC (°C/W) θJA (°C/W) 38 105 YZF (1) (2) POWER RATING (2) (TJ = 125°C) TA = 25°C TA = 70°C 950 mW 428 mW This data was taken with the JEDEC High-K test PCB. Power rating is determined with a junction temperature of 125°C. This is the point where distortion starts to substantially increase and long-term reliability starts to be reduced. Thermal management of the final PCB should strive to keep the junction temperature at or below 125°C for best performance and reliability. RECOMMENDED OPERATING CONDITIONS over operating free-air temperature range (unless otherwise noted) VS+ 2 Supply voltage Submit Documentation Feedback MIN MAX 2.85 5 UNIT V Copyright © 2007, Texas Instruments Incorporated Product Folder Link(s): THS7318 THS7318 www.ti.com SLOS517C – JANUARY 2007 – REVISED DECEMBER 2007 PACKAGING/ORDERING INFORMATION PACKAGED DEVICES THS7318YZFT THS7318YZFR (1) PACKAGE TYPE (1) PART CODE Wafer Scale 9-pin BYR TRANSPORT MEDIA, QUANTITY Tape and Reel, 250 Tape and Reel, 3000 For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI Web site at www.ti.com. NanoFree™ Placement and Removal Procedures These procedures are generic guidelines to rework NanoFree™ packages assembled on a 0.056-inch thick FR4 board. It’s recommended to modify heating profiles for different board thicknesses and equipment used. The assembly process recommended below should be used with a new device. Do not reuse the part after it is removed. Air-Vac Engineering (www.air-vac-eng.com) has established NanoFreeTM reflow profiles for their Hot Gas (convection) rework equipment DRS-24NC. The NMX090DVG nozzle is recommended for use with the YZF package. Customers can use other comparable hot gas (convection) equipment and tooling. Placement 1. Apply flux paste to component 2. Align device over pads 3. Place device on board. Care must be taken to prevent over-travel during placement which may damage the part or vacuum tip. 4. Raise nozzle 0.05" 5. Preheat board to 90°C, nozzle warming up 20% air flow, 125°C 6. Soak Stage—20% air flow, 225°C, 90 seconds 7. Ramp Stage—20% air flow, 335°C, 30 seconds 8. Reflow Stage—25% air flow, 370°C, 65 seconds 9. Cool down Stage—40% air flow, 25°C, 50 seconds Removal 1. Apply flux paste to component 2. Align Nozzle over part to be removed 3. Maintain nozzle 0.050"over device. Care must be taken to prevent over-travel of the vacuum tip which may damage the part or vacuum tip when measuring this distance. 4. Preheat board to 90°C, nozzle warming up 20% air flow, 125°C 5. Soak Stage—20% air flow, 225°C, 90 seconds 6. Ramp Stage—20% air flow, 335°C, 30 seconds 7. Reflow Stage—25% air flow, 370°C, 65 seconds 8. Enable Vacuum at the end of the reflow cycle, lower vacuum nozzle, and remove part 9. Cool down Stage—40% air flow, 25°C, 50 seconds 10. Turn off the vacuum and remove part from nozzle. 11. Care should be used if the device is to be returned to TI for failure analysis. Using any metal tweezers or rough handling can damage the part, and render it un-analyzable. Submit Documentation Feedback Copyright © 2007, Texas Instruments Incorporated Product Folder Link(s): THS7318 3 THS7318 www.ti.com SLOS517C – JANUARY 2007 – REVISED DECEMBER 2007 ELECTRICAL CHARACTERISTICS VS+ = 3.3V, 27°C, Y’ and P’R / C’ channels: RL = 150 Ω and CL = 6.2 pF to GND P’B / CVBS channel: 75 Ω and CL = 6.2 pF to GND (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX 2.85 3.3 5 UNIT TEST LEVEL (1) V B DC CHARACTERISTICS VSS Supply voltage range IQ Quiescent supply current EN = High VSD Shutdown supply current EN = Low Output DC level shift voltage All channels Input bias current 2.8 3.5 4.5 mA A 0.150