THS9000
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SLOS425E – DECEMBER 2003 – REVISED DECEMBER 2013
50 MHz to 750 MHz CASCADEABLE AMPLIFIER
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FEATURES
APPLICATIONS
•
•
1
23
•
•
•
High Dynamic Range
– OIP3 = 36 dBm
– NF < 4.5 dB
Single-Supply Voltage
High Speed
– VS = 3 V to 5 V
– IS = Adjustable
Input/Output Impedance
– 50 Ω
IF
–
–
–
–
Amplifiers
TDMA: GSM, IS-136, EDGE/UWE-136
CDMA: IS-95, UMTS, CDMA2000
Wireless Local Loops
Wireless LAN: IEEE802.11
DESCRIPTION
The THS9000 is a medium power, cascadeable, gain block optimized for high IF frequencies. The amplifier
incorporates internal impedance matching to 50 Ω. The part mounted on the standard EVM achieves greater
than 15-dB input and output return loss from 50 MHz to 325 MHz with VS = 5 V, R(BIAS) = 237 Ω, L(COL) = 470 nH.
Design requires only two dc-blocking capacitors, one power-supply bypass capacitor, one RF choke, and one
bias resistor.
Figure 1. FUNCTIONAL BLOCK DIAGRAM
VS
C(BYP)
L(COL)
IF(OUT)
C(BLK)
6
5
4
1
2
3
THS9000
IF(IN)
C(BLK)
VS
R(BIAS)
1
2
3
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PowerPAD is a trademark of Texas Instruments Incorporated.
All other trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2003–2013, Texas Instruments Incorporated
THS9000
SLOS425E – DECEMBER 2003 – REVISED DECEMBER 2013
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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
AVAILABLE OPTIONS
PACKAGED DEVICE
(1)
THS9000DRWT
THS9000DRWR
(1)
(2)
PACKAGE TYPE
TRANSPORT MEDIA, QUANTITY
Tape and Reel, 250
2 × 2 QFN (2)
Tape and Reel, 3000
For the most current package and ordering information, see the Package Option Addendum at the end
of this document, or see the TI Web site at www.ti.com.
The PowerPAD™ is electrically isolated from all other pins.
ABSOLUTE MAXIMUM RATINGS
Over operating free-air temperature (unless otherwise noted) (1)
THS9000
Supply voltage, GND to VS
UNIT
5.5
Input voltage
V
GND to VS
Continuous power dissipation
See Dissipation Rating table
Maximum junction temperature, TJ
+150
Maximum junction temperature, continuous operation, long term reliability,
TJ (2)
+125
Storage temperature, Tstg
(1)
(2)
°C
–65 to +150
°C
+300
°C
HBM
2000
V
CDM
1500
V
MM
100
V
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds
ESD Ratings:
°C
The absolute maximum ratings under any condition is limited by the constraints of the silicon process. Stresses above these ratings may
cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are
stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied.
The maximum junction temperature for continuous operation is limited by package constraints. Operation above this temperature may
result in reduced reliability and/or lifetime of the device.
DISSIPATION RATING TABLE
PACKAGE
DRW
(1)
(2)
(3)
(2) (3)
POWER RATING (1)
θJA
(°C/W)
TA ≤ +25°C
TA = +85°C
91
1.1 W
440 mW
Power rating is determined with a junction temperature of +125°C. Thermal management of the final PCB should strive to keep the
junction temperature at or below +125°C for best performance.
This data was taken using the JEDEC standard High-K test PCB.
The THS9000 incorporates a PowerPAD on the underside of the chip. This acts as a heatsink and must be connected to a thermally
dissipating plane for proper power dissipation. Failure to do so may result in exceeding the maximum junction temperature, which could
permanently damage the device. See TI Technical Brief SLMA002 for more information about utilizing the PowerPAD thermallyenhanced package.
RECOMMENDED OPERATING CONDITIONS
MIN
NOM
MAX
UNIT
Supply voltage
2.7
5
V
Operating free-air temperature, TA
–40
+85
°C
Supply current
2
100
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ELECTRICAL CHARACTERISTICS
Typical Performance (VS = 5 V, R(BIAS) = 237 Ω, L(COL) = 470 nH) (unless otherwise noted)
PARAMETER
TEST CONDITIONS
Gain
OIP3
1-dB compression
Input return loss
Output return loss
Reverse isolation
Noise figure
MIN
TYP
f = 50 MHz
15.9
f = 350 MHz
15.6
f = 50 MHz
36
f = 350 MHz
35
f = 50 MHz
20.8
f = 350 MHz
20.6
f = 50 MHz
15
f = 350 MHz
19.7
f = 50 MHz
17.2
f = 350 MHz
15.1
f = 50 MHz
21
f = 350 MHz
20
f = 50 MHz
3.6
f = 350 MHz
4
MAX
UNITS
dB
dBm
dBm
dB
dB
dB
dB
PIN ASSIGNMENT
IF(IN) 1
6
VS
GND 2
5
L(COL)
BIAS 3
4
IF(OUT)
Terminal Functions
PIN NUMBERS
NAME
DESCRIPTION
1
IF(IN)
Signal input
2
GND
Negative power-supply input
3
BIAS
Bias current adjustment input
4
IF(OUT)
Signal output
5
L(COL)
Output transistor load inductor
6
VS
Positive power-supply input
SIMPLIFIED SCHEMATIC
VS
L(COL)
BIAS
IF(OUT)
IF(IN)
GND
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TABLE OF GRAPHS
FIGURE
IS
S21 Frequency response
1
S22 Frequency response
2
S11 Frequency response
3
S12 Frequency response
4
S21 vs R(Bias)
5
Output power vs Input power
6
OIP2 vs Frequency
7
Noise figure vs Frequency
8
OIP3 vs Frequency
9
Supply current vs R(Bias)
10
S21 Frequency response
11
S22 Frequency response
12
S11 Frequency response
13
S12 Frequency response
14
Noise figure vs Frequency
15
OIP2 vs Frequency
16
Output power vs Input power
17
OIP3 vs Frequency
18
TYPICAL CHARACTERISTICS
S-Parameters of THS9000 as mounted on the EVM with VS = 5 V, R(BIAS) = 237 Ω, and L(COL) = 68 nH to 470 nH
at room temperature.
S21
FREQUENCY RESPONSE
17
S22
FREQUENCY RESPONSE
0
L(COL) = 470 nH
L(COL) = 68 nH
L(COL) = 220 nH
16
L(COL) = 100 nH
L(COL) = 330 nH
−5
S22 − dB
S21 − dB
15
14
−10
L(COL) = 220 nH
13
L(COL) = 100 nH
L(COL) = 330 nH
12
−15
L(COL) = 470 nH
L(COL) = 68 nH
11
VS = 5 V,
R(BIAS) = 237W,
10
1M
10 M
100 M
VS = 5 V,
R(BIAS) = 237W,
−20
1G
1M
4
10 M
100 M
1G
f − Frequency − Hz
f − Frequency − Hz
Figure 2.
Figure 3.
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TYPICAL CHARACTERISTICS (continued)
S11
FREQUENCY RESPONSE
0
S12
FREQUENCY RESPONSE
−15
L(COL) = 68 nH
−5
L(COL) = 470 nH
L(COL) = 220 nH
−15
S12 − dB
S11 − dB
−20
L(COL) = 100 nH
−10
L(COL) = 330 nH
−20
L(COL) = 470 nH
−25
VS = 5 V,
R(BIAS) = 237W,
L(COL) = 330 nH
−25
L(COL) = 220 nH
−30
L(COL) = 100 nH
−30
L(COL) = 68 nH
−35
−35
VS = 5 V,
R(BIAS) = 237W,
−40
−45
1M
10 M
100 M
f − Frequency − Hz
Figure 4.
−40
1G
10 M
100 M
f − Frequency − Hz
Figure 5.
1M
1G
S-Parameters of THS9000 as mounted on the EVM with VS = 3 V and 5 V, R(BIAS) = various, and L(COL) = 470 nH
at room temp.
S21
vs
R(BIAS)
17
OUTPUT POWER
vs
INPUT POWER
22
R(BIAS) = 56.2 W,
VS = 3 V
R(BIAS) = 237 W,
VS = 5 V
VS = 5 V, IS = 97 mA
21
16
PO − Output Power − dBm
15
S21 − dB
VS = 5 V, IS = 71 mA
20
R(BIAS) = 97.7W,
VS = 3 V
14
R(BIAS) = 340 W,
VS = 5 V
13
R(BIAS) = 174 W, VS = 3 V
R(BIAS) = 549 W, VS = 5 V
12
19
VS = 5 V, IS = 48 mA
18
17
16
15
VS = 3 V, IS = 69 mA
14
VS = 3 V, IS = 49 mA
13
VS = 3 to 5 V,
R(BIAS) = Various,
L(COL) = 470 nH
11
11
10
1M
10 M
100 M
f − Frequency − Hz
VS = 3 V, IS = 91 mA
12
1G
10
−6
Figure 6.
−4
−2
0
2
4
6
8
PI − Input Power − dBm
Figure 7.
10
12
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5
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TYPICAL CHARACTERISTICS (continued)
OIP2
vs
FREQUENCY
NOISE FIGURE
vs
FREQUENCY
50
5
VS = 5 V,
IS = 97 mA
48
VS = 3 V,
IS = 91 mA
VS = 3 V,
IS = 69 mA
44
42
40
VS = 5 V, IS = 71 mA
4.5
Noise Figure − dB
OIP2 − dBm
46
VS = 5 V, IS = 97 mA
4.75
VS = 5 V, IS = 71 mA
VS = 5 V, IS = 48 mA
4.25
4
VS = 3 V,
IS = 70 mA
3.75
VS = 3 V, IS = 49 mA
VS = 3 V, IS = 49 mA
38
3.5
36
VS = 3 V, IS = 91 mA
3.25
VS = 5 V, IS = 48 mA
34
0
50
150
100
200
f − Frequency − MHz
250
3
300
0
100
Figure 8.
OIP3
vs
FREQUENCY
500
450
550
200
VS = 5 V, IS = 71 mA
38
VS = 5 V, IS = 97 mA
180
I S − Supply Current − mA
VS = 3 V, IS = 91 mA
36
OIP3 − dBm
400
SUPPLY CURRENT
vs
R(BIAS)
40
34
32
VS = 3 V, IS = 69 mA
30
28
26
24
100
200
300
f − Frequency − MHz
140
120
VS = 5 V
100
80
VS = 3 V
40
VS = 5 V, IS = 48 mA
0
160
60
VS = 3 V, IS = 49 mA
400
500
20
50
Figure 10.
6
200
300
f − Frequency − MHz
Figure 9.
150
250
350
R(BIAS) − W
Figure 11.
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TYPICAL CHARACTERISTICS (continued)
THS9000 as mounted on the EVM with VS = 5 V, R(BIAS) = 237 Ω, and L(COL) = 470 nH at +40°C, +25°C, and
+85°C.
S21
FREQUENCY RESPONSE
17
S22
FREQUENCY RESPONSE
0
TA = −455C
VS = 5 V,
R(BIAS) = 237 W,
L(COL) = 470 nH
16
15
−5
TA = 855C
S22 − dB
S21 − S-Parameters − dB
TA = 255C
14
−10
TA = 855C
13
12
VS = 5 V,
R(BIAS) = 327 W,
L(COL) = 470 nH
11
10
TA = 255C
−15
1M
TA = −455C
−20
10 M
100 M
f − Frequency − Hz
Figure 12.
1G
1M
S12
FREQUENCY RESPONSE
−15
VS = 5 V,
R(BIAS) = 237 W,
L(COL) = 470 nH
−5
VS = 5 V,
R(BIAS) = 237 W,
L(COL) = 470 nH
TA = −455C
−20
−10
−15
S12 − dB
S11 − dB
1G
Figure 13.
S11
FREQUENCY RESPONSE
0
10 M
100 M
f − Frequency − Hz
−20
TA = 255C
−25
TA = 855C
−25
−30
TA = 855C
−30
−35
TA = −455C
−40
TA = 255C
−45
−35
−40
1M
10 M
100 M
1G
1M
f − Frequency − Hz
Figure 14.
10 M
100 M
f − Frequency − Hz
1G
Figure 15.
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TYPICAL CHARACTERISTICS (continued)
NOISE FIGURE
vs
FREQUENCY
OIP2
vs
FREQUENCY
50
6
VS = 5 V,
R(BIAS) = 237 W,
L(COL) = 470 nH
5.5
VS = 5 V,
R(BIAS) = 237 W,
L(COL) = 470 nH
49
48
47
5
OIP2 − dBm
Noise Figure − dB
TA = 855C
4.5
TA = 255C
4
TA = −455C
46
45
44
TA = 255C
43
TA = 855C
42
3.5
41
TA = −455C
3
40
0
100
200
300
f − Frequency − MHz
Figure 16.
400
100
50
500
150
OUTPUT POWER
vs
INPUT POWER
TA = 855C
39
VS = 5 V,
R(BIAS) = 237 W,
L(COL) = 470 nH
TA = 255C
38
OIP3 − dBm
PO − Output Power − dBm
300
40
VS = 5 V,
R(BIAS) = 237 W,
L(COL) = 470 nH
f = 100 MHz
20
19
18
250
OIP3
vs
FREQUENCY
22
21
200
f − Frequency − MHz
Figure 17.
TA = −455C
37
TA = −455C
36
TA = 855C
35
17
34
16
TA = 255C
33
15
14
−2
8
0
2
4
6
8
PI − Input Power − dBm
Figure 18.
10
12
32
50
100 150 200 250 300 350 400 450 500
f − Frequency − MHz
Figure 19.
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TYPICAL CHARACTERISTICS
Table 1. S-Parameters Tables of THS9000 with EVM De-Embedded
VS = 5 V, R(BIAS) = 237 Ω, L(COL) = 470 nH
S21
S11
S22
S12
FREQUENCY
(MHz)
GAIN (dB)
PHASE (°)
GAIN (dB)
PHASE (°)
GAIN (dB)
PHASE (°)
GAIN (dB)
PHASE (°)
1.0
–4.2
–169.5
–2.4
–0.9
–1.9
158.1
–63.1
167.0
5.0
11.3
–124.5
–1.5
–14.5
–2.6
138.0
–32.9
122.4
10.2
15.8
–147.8
–2.2
–42.3
–5.0
101.0
–24.0
80.4
19.7
16.4
–169.4
–6.5
–69.7
–10.5
66.6
–21.3
41.6
50.1
16.0
177.2
–15.6
–91.4
–16.7
30.1
–20.7
14.4
69.7
15.9
173.5
–19.8
–97.7
–17.8
17.7
–20.7
9.1
102.4
15.9
168.4
–26.9
–102.6
–18.2
4.3
–20.7
4.4
150.5
15.8
162.0
–39.0
14.1
–18.1
–8.6
–20.7
–0.7
198.1
15.7
155.8
–27.6
50.8
–17.4
–19.6
–20.7
–1.7
246.9
15.7
149.6
–23.7
40.6
–16.4
–26.7
–20.7
–3.5
307.6
15.6
141.9
–19.8
33.1
–14.9
–37.2
–20.6
–5.7
362.8
15.6
134.7
–17.3
24.7
–13.3
–44.3
–20.4
–7.7
405.0
15.6
129.2
–15.5
20.3
–12.1
–51.0
–20.2
–10.0
452.2
15.6
122.3
–13.8
14.7
–10.6
–58.1
–19.9
–12.5
504.7
15.5
114.9
–11.8
6.3
–9.0
–66.5
–19.7
–16.2
563.4
15.4
105.8
–9.7
–2.9
–7.2
–77.5
–19.4
–22.4
595.3
15.3
100.5
–8.6
–9.1
–6.3
–83.6
–19.3
–26.2
664.5
14.9
88.7
–6.3
–24.2
–4.4
–99.7
–19.3
–36.7
702.1
14.6
81.0
–5.3
–33.2
–3.7
–109.2
–19.6
–43.4
741.8
14.1
76.3
–4.4
–42.9
–3.0
–118.8
–19.9
–50.2
828.1
12.7
60.2
–2.9
–65.5
–2.3
–142.8
–21.7
–69.2
874.9
11.2
51.0
–2.5
–77.9
–2.5
–155.0
–23.6
–75.0
924.4
10.1
50.2
–2.4
–90.4
–3.1
–166.0
–25.8
–85.2
976.7
8.8
51.8
–2.5
––100.7
–4.3
–173.7
–28.4
–78.9
1031.9
9.2
58.2
–2.6
–108.7
–4.7
–175.2
–29.7
–68.7
1090.3
8.9
48.0
–2.5
–115.2
–4.4
–164.7
–31.4
–69.1
1151.9
8.8
39.9
–2.3
–123.3
–3.5
–175.4
–33.6
–83.4
1217.1
8.0
27.7
–2.1
–132.0
–3.0
175.3
–38.2
–81.4
1285.9
7.0
30.5
–2.0
–140.7
–2.8
168.7
–42.3
–25.5
1358.6
5.6
20.6
–1.9
–149.4
–2.9
159.1
–42.2
41.6
1435.5
4.3
19.5
–1.8
–159.4
–3.0
151.3
–38.7
63.3
1516.6
3.4
17.7
–1.9
–168.3
–3.2
144.7
–33.6
62.4
1602.4
2.8
16.5
–2.0
–177.2
–3.5
138.2
–30.5
59.6
1693.0
2.2
8.6
–2.1
174.0
–3.8
131.4
–28.1
56.2
1788.8
1.4
–0.7
–2.2
165.4
–4.1
124.6
–26.2
50.4
1889.9
0.5
–4.1
–2.3
157.0
–4.5
118.2
–24.7
42.4
1996.8
–0.6
–4.5
–2.6
150.0
–4.9
111.2
–24.2
39.5
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APPLICATION INFORMATION
The THS9000 is a medium power, cascadeable, amplifier optimized for high intermediate frequencies in radios.
The amplifier is unconditionally stable and the design requires only two dc-blocking capacitors, one power-supply
bypass capacitor, one RF choke, and one bias resistor. Refer to Figure 26 for the circuit diagram.
The THS9000 operates with a power-supply voltage ranging from 2.5 V to 5.5 V.
The value of R(BIAS) sets the bias current to the amplifier. Refer to Figure 11. This allows the designer to trade-off
linearity versus power consumption. R(BIAS) can be removed without damage to the device.
Component selection of C(BYP), CIN, and COUT is not critical. The values shown in Figure 26 were used for all the
data shown in this data sheet.
The amplifier incorporates internal impedance matching to 50 Ω that can be adjusted for various frequencies of
operation by proper selection of L(COL).
Figure 20 shows the s-parameters of the part mounted on the standard EVM with VS = 5 V, R(BIAS) = 237 Ω, and
L(COL) = 470 nH. With this configuration, the part is very broadband, and achieves greater than 15-dB input and
output return loss from 50 MHz to 325 MHz.
Figure 21 shows the S-parameters of the part mounted on the standard EVM with VS = 5 V, R(BIAS) = 237 Ω, and
L(COL) = 68 nH. With this configuration, the part achieves greater than 15-dB input and output return loss from
250 MHz to 400 MHz.
16
VS = 5 V,
R(BIAS) = 237 W,
L(COL) = 470 nH
0
0
15
−15
13
S22
−20
12
−10
13
−15
12
11
11
−25
S12
−30
1M
10 M
100 M
1G
S12
10
−20
VS = 5 V,
R(BIAS) = 237 W,
L(COL) = 68 nH
−25
10
−30
1M
f − Frequency − Hz
Figure 20. S-Parameters of THS9000 mounted on
the standard EVM with VS = 5 V, R(BIAS) = 237 Ω,
and L(COL) = 470 nH
−5
S11
14
S21 − dB
−10
14
S11, S12, S22 − dB
−5
15
10
5
S21
S22
S11, S12, S22 − dB
S21
S11
S21 − dB
16
5
17
100 M
10 M
f − Frequency − Hz
1G
Figure 21. S-Parameters of THS9000 mounted on
the standard EVM with VS = 5 V, R(BIAS) = 237 Ω,
and L(COL) = 68 nH
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SLOS425E – DECEMBER 2003 – REVISED DECEMBER 2013
Figure 22 shows an example of a single conversion receiver architecture and where the THS9000 would typically
be used.
900 MHz − 2 GHz
900 MHz − 2 GHz
Image Rejection
Filter
LNA 2
LNA 1
LO Drive
Amp 1
RX LO
IF Amp 1
Mixer
IF Amp 2
IF SAW
PGA
IF SAW
ADC
LO Drive
Amp 2
THS9000
2x for Diversity
Figure 22. Example Single Conversion Receiver Architecture
Figure 23 shows an example of a dual conversion receiver architecture and where the THS9000 would typically
be used.
900 MHz − 2 GHz
LNA 1
100 MHz − 300 MHz
1st IF Amp
Image Reject
Filter 1st Mixer
1st IF SAW PGA
LNA 2
LO1 Drive LO1 Drive
Amp 2
RX LO 1 Amp 1
20 MHz − 70 MHz
2nd IF Amp1
2nd IF SAW 2nd IF
Amp2
2nd Mixer
Alias Filter
ADC
LO2 Drive LO2 Drive
Amp 1
Amp 2
RX LO2
THS9000
2x for Diversity
Figure 23. Example Dual Conversion Receiver Architecture
Figure 24 shows an example of a dual conversion transmitter architecture and where the THS9000 would
typically be used.
BB
100 MHz − 300 MHz
900 MHz − 2 GHz
1st IF amp
DAC
RX LO1
BB Amp
Alias Filter 1st Mixer
LO1 Drive LO1 Drive
Amp 2
Amp 1
IF SAW
RX LO2
PGA
2nd Mixer
PA
LO2 Drive LO2 Drive
Amp 2
Amp 1
THS9000
2x for Diversity
Figure 24. Example Dual Conversion Transmitter Architecture
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THS9000
SLOS425E – DECEMBER 2003 – REVISED DECEMBER 2013
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Figure 25 shows the THS9000 and Sawtek #854916 SAW filter frequency response along with the frequency
response of the SAW filter alone. The SAW filter has a center frequency of 140 MHz with 10-MHz bandwidth and
8-dB insertion loss. It can be seen that the frequency response with the THS9000 is the same as with the SAW
except for a 15-dB gain. The THS9000 is mounted on the standard EVM with VS = 5 V, R(BIAS) = 237 Ω, and
L(COL) = 470 nH. Note the amplifier does not add artifacts to the signal.
SAW + THS9000
THS9000
SAW
RED =
SAW
140 MHz
SAW Only
GREEN =
140 MHz SAW: Sawtek #854916
Figure 25. Frequency Response of the THS9000 and SAW Filter, and SAW Filter Only
VS
C(BYP)
0.1 mF
CO IF(OUT)
L(COL)
1 nF
6
5
4
1
2
3
THS9000
IF(IN)
CI
R(BIAS)
1 nF
VS
Figure 26. THS9000 Recommended Circuit (used for all tests)
12
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SLOS425E – DECEMBER 2003 – REVISED DECEMBER 2013
Evaluation Module
Table 1 is the bill of materials, and Figure 27 and Figure 28 show the EVM layout.
Bill Of Materials
ITEM
(1)
DESCRIPTION
1
Cap, 0.1 μF, ceramic, X7R, 50 V
2
Cap, 1000 pF, ceramic, NPO, 100 V
3
Inductor, 470 nH, 5%
4
Resistor, 237 Ω, 1/8 W, 1%
5
Open
6
REF DES
QTY
PART NUMBER (1)
(AVX) 08055C104KAT2A
C1
1
C2, C3
2
(AVX) 08051A102JAT2A
L1
1
(Coilcraft) 0805CS-471XJBC
(Phycomp) 9C08052A2370FKHFT
R1
1
TR1
1
Jack, banana receptance, 0.25" dia.
J3, J4
2
(SPC) 813
7
Connector, edge, SMA PCB jack
J1, J2
2
(Johnson) 142-0701-801
8
Standoff, 4-40 Hex, 0.625" Length
4
(KEYSTONE) 1808
9
Screw, Phillips, 4-40, .250"
4
SHR-0440-016-SN
10
IC, THS9000
1
(TI) THS9000DRD
11
Board, printed-circuit
1
(TI) EDGE # 6453521 Rev.A
U1
The manufacturer's part numbers are used for test purposes only.
Figure 27. EVM Top Layout
Figure 28. EVM Bottom Layout
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THS9000
SLOS425E – DECEMBER 2003 – REVISED DECEMBER 2013
www.ti.com
0.110
(2,79)
0.050
(1,27)
0.025
(0,64)
0.140
(3,56)
0.010
(0,254)
vias
0.080
(2,03)
0.028
(0,711)
0.032
(0,81)
0.011
(0,28)
0.015
(0,381)
Figure 29. THS9000 Recommended Footprint dimensions are in inches (millimeters)
14
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THS9000
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SLOS425E – DECEMBER 2003 – REVISED DECEMBER 2013
REVISION HISTORY
Changes from Revision D (October 2008) to Revision E
•
Page
Changed the data sheet title From: 50 MHz to 400 MHz CASCADEABLE AMPLIFIER To: 50 MHz to 750 MHz
CASCADEABLE AMPLIFIER ............................................................................................................................................... 1
Changes from Revision C (February 2007) to Revision D
Page
•
Removed the DRD ordering options from the Available Options table ................................................................................ 2
•
Formatted the Absolute Maximum Ratings table to current standards ................................................................................ 2
•
Deleted DRD row from the Dissipation Rating table ............................................................................................................. 2
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PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
THS9000DRWR
ACTIVE
VSON
DRW
6
3000
RoHS & Green
NIPDAUAG
Level-2-260C-1 YEAR
-40 to 85
BQX
THS9000DRWT
ACTIVE
VSON
DRW
6
250
RoHS & Green
NIPDAUAG
Level-2-260C-1 YEAR
-40 to 85
BQX
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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