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THVD1406DRLR

THVD1406DRLR

  • 厂商:

    BURR-BROWN(德州仪器)

  • 封装:

    SOT-583

  • 描述:

    半 收发器 1/1 RS422,RS485 SOT-583

  • 数据手册
  • 价格&库存
THVD1406DRLR 数据手册
THVD1406, THVD1426 SLLSF87A – MAY 2021 – REVISED NOVEMBER 2021 THVD1406, THVD1426 3.3-V to 5-V RS-485 Transceivers with Auto-direction Control and ±12-kV IEC ESD Protection 1 Features 3 Description • The THVD14x6 (THVD1406 and THVD1426) devices are robust half-duplex RS-485 transceivers for industrial applications. These devices feature autodirection control using the data input pin that reduces the reliance on separate pins for driver-enable and the receiver-enable functionality. This reduces the number of isolation channels needed or number of the GPIO pins needed for logic control. The bus pins are immune to high levels of IEC ESD events eliminating need of additional system level protection components. • • • • • • • • • • • • • Meets or exceeds the requirements of the TIA/ EIA-485A standard 3-V to 5.5-V Supply voltage Auto-direction control using the data input pin Half-duplex RS-422/RS-485 Data rates – THVD1406: 500 kbps – THVD1426: 12 Mbps Bus I/O protection – ±16-kV HBM ESD – ±12-kV IEC 61000-4-2 Contact discharge – ±15-kV IEC 61000-4-2 Air gap discharge – ±4-kV IEC 61000-4-4 Fast transient burst ±16-V bus fault protection Small, space-saving 8-Pin SOT package option (2.1 mm x 1.2 mm) – See the layout example for co-layout with standard SOIC-8 package Extended industrial temperature range: -40°C to 125°C Large receiver hysteresis for noise rejection Low power consumption – Low standby supply current: 3µA (typ) – Quiescent current during operation: 1.7 mA (typ) Glitch-free power-up, power-down for hot plug-in capability Open, short, and idle bus fail-safe 1/8 Unit load (Up to 256 bus nodes) The devices operate from a single 3-V to 5.5-V supply. The wide common-mode voltage range and low input leakage on bus pins make devices suitable for multi-point applications over long cable runs. The devices are available in industry standard 8-pin SOIC package for drop-in compatibility. The devices are also available in a small, space-saving SOT package. The devices are characterized for ambient temperatures from –40°C to 125°C. Device Information PACKAGE(1) PART NUMBER THVD1406 THVD1426 (1) BODY SIZE (NOM) SOIC (8) 4.90 mm × 3.91 mm SOT (8) 2.10 mm x 1.20 mm For all available packages, see the orderable addendum at the end of the data sheet. VCC 2 Applications • • • • • Factory automation and control Building automation HVAC systems Video surveillance Smart meters R RE A SHDN B D GND Simplified Schematic An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. THVD1406, THVD1426 www.ti.com SLLSF87A – MAY 2021 – REVISED NOVEMBER 2021 Table of Contents 1 Features............................................................................1 2 Applications..................................................................... 1 3 Description.......................................................................1 4 Revision History.............................................................. 2 5 Pin Configuration and Functions...................................3 6 Specifications.................................................................. 4 6.1 Absolute Maximum Ratings........................................ 4 6.2 ESD Ratings............................................................... 4 6.3 ESD Ratings - IEC Specifications............................... 4 6.4 Recommended Operating Conditions.........................4 6.5 Thermal Information....................................................5 6.6 Power Dissipation Characteristics.............................. 5 6.7 Electrical Characteristics.............................................6 6.8 Switching Characteristics (THVD1406).......................7 6.9 Switching Characteristics (THVD1426).......................7 6.10 Typical Characteristics.............................................. 8 7 Parameter Measurement Information.......................... 10 8 Detailed Description......................................................12 8.1 Overview................................................................... 12 8.2 Functional Block Diagrams....................................... 12 8.3 Feature Description...................................................12 8.4 Device Functional Modes..........................................12 9 Application Information Disclaimer............................. 14 9.1 Application Information............................................. 14 9.2 Typical Application.................................................... 14 10 Power Supply Recommendations..............................18 11 Layout........................................................................... 19 11.1 Layout Guidelines................................................... 19 11.2 Layout Example...................................................... 19 12 Device and Documentation Support..........................21 12.1 Device Support....................................................... 21 12.2 Receiving Notification of Documentation Updates..21 12.3 Support Resources................................................. 21 12.4 Trademarks............................................................. 21 12.5 Electrostatic Discharge Caution..............................21 12.6 Glossary..................................................................21 13 Mechanical, Packaging, and Orderable Information.................................................................... 21 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision * (May 2021) to Revision A (November 2021) Page • Changed document status from Advanced Information to Production data ...................................................... 1 2 Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: THVD1406 THVD1426 THVD1406, THVD1426 www.ti.com SLLSF87A – MAY 2021 – REVISED NOVEMBER 2021 5 Pin Configuration and Functions R 1 8 VCC RE 2 7 B SHDN 3 6 A 4 5 GND D Not to scale Figure 5-1. D (8-Pin SOIC) , DRL (8-Pin SOT) Top View Table 5-1. Pin Functions PIN NAME NO. I/O DESCRIPTION R 1 O Receiver data output RE 2 I Receiver enable, active low (internal 2-MΩ pull-up) SHDN 3 I Shutdown enable, active low (internal 2-MΩ pull-up) D 4 I Driver data input GND 5 - Device ground A 6 I/O Bus I/O port, A (complementary to B) B 7 I/O Bus I/O port, B (complementary to A) VCC 8 P 3-V to 5.5-V supply For the device. Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: THVD1406 THVD1426 3 THVD1406, THVD1426 www.ti.com SLLSF87A – MAY 2021 – REVISED NOVEMBER 2021 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN MAX VCC Supply voltage –0.5 7 V VL Input voltage at any logic pin (D, SHDN or RE) –0.3 5.7 V VA, VB Voltage at A or B inputs –16 16 V IO Receiver output current –24 24 mA TJ Junction temperature 170 °C TSTG Storage temperature 150 °C (1) –65 UNIT Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions. If used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime. 6.2 ESD Ratings V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) VALUE UNIT Between bus terminals (A, B) and GND ±16,000 V All other pins ±4,000 Charged-device model (CDM), per ANSI/ESDA/JEDEC JS-002(2) (1) (2) V ±1,500 JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.3 ESD Ratings - IEC Specifications VALUE V(ESD) Electrostatic discharge IEC 61000-4-2 ESD (Contact Discharge), bus terminals and GND ±12,000 IEC 61000-4-2 ESD (Air-Gap Discharge), bus terminals and GND ±15,000 IEC 61000-4-4 EFT (Fast transient or burst), bus terminals and GND ±4,000 UNIT V 6.4 Recommended Operating Conditions VCC Supply voltage VID Differential input voltage VI Input voltage at any bus terminal(1) VIH High-level input voltage (D, SHDN, and RE inputs) VIL Low-level input voltage (D, SHDN, and RE inputs) NOM MAX 3 5 5.5 V –12 12 V –7 12 V 2 5.5 V V 0 0.8 –60 60 –8 8 UNIT IO Output current RL Differential load resistance 1/tUI Signaling rate: THVD1406 1/tUI Signaling rate: THVD1426 TJ Junction temperature –40 TA (2) Operating ambient temperature –40 125 °C TSHDN Thermal shutdown threshold (temperature rising) Thermal shutdown threshold (temperature rising) THYS Thermal shutdown hysteresis Thermal shutdown hysteresis (1) 4 Driver MIN Receiver 54 150 60 mA Ω 500 kbps 12 Mbps 150 °C 170 °C 15 °C The algebraic convention in which the least positive (most negative) limit is designated as minimum is used in this data sheet. Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: THVD1406 THVD1426 THVD1406, THVD1426 www.ti.com (2) SLLSF87A – MAY 2021 – REVISED NOVEMBER 2021 Operation is specified for internal (junction) temperatures up to 150°C. Self-heating due to internal power dissipation should be considered for each application. Maximum junction temperature is internally limited by the thermal shut-down (TSD) circuit which disables the driver outputs when the junction temperature reaches 170°C. 6.5 Thermal Information THVD1406, THVD1426 THERMAL METRIC(1) DRL (SOT) D (SOIC) 8 PINS 8 PINS UNIT RθJA Junction-to-ambient thermal resistance 112.2 126.0 °C/W RθJC(top) Junction-to-case (top) thermal resistance 28.4 66.2 °C/W RθJB Junction-to-board thermal resistance 22.1 69.4 °C/W ψJT Junction-to-top characterization parameter 1.2 18.7 °C/W ψJB Junction-to-board characterization parameter 22.0 68.7 °C/W (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. 6.6 Power Dissipation Characteristics PARAMETER PD TEST CONDITIONS Power dissipation, driver and receiver enabled, VCC = 5.5 V, TA = 125°C, 50% duty cycle square-wave signal at maximum signaling rate VALUE Unterminated RL = 300 Ω, CL = 50 pF THVD1406 500 kbps 150 THVD1426 12 Mbps 155 RS-422 load RL = 100 Ω, CL = 50 pF THVD1406 500 kbps 175 THVD1426 12 Mbps 180 RS-485 load RL = 54 Ω, CL = 50 pF THVD1406 500 kbps 220 THVD1426 12 Mbps 225 UNIT mW Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: THVD1406 THVD1426 5 THVD1406, THVD1426 www.ti.com SLLSF87A – MAY 2021 – REVISED NOVEMBER 2021 6.7 Electrical Characteristics over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP RL = 60 Ω, -7 V ≤ Vtest ≤ 12 V 1.5 2 RL = 60 Ω, -7 V ≤ Vtest ≤ 12 V, 4.5 V ≤ Vcc ≤ See Figure 7-1 5.5 V 2.1 3 2 2.5 1.5 2 2.1 3 MAX UNIT Driver │VOD│ Driver differential-output voltage magnitude RL = 100 Ω, CL = 50 pF RL = 54 Ω, CL = 50 pF See Figure 7-2 RL = 54 Ω, 4.5 V ≤ Vcc ≤ 5.5 V Δ│VOD│ Change in magnitude of driver differential-output voltage VOC(SS) Steady-state common-mode output voltage ΔVOC Change in differential driver common-mode output voltage VOC(PP) Peak-to-peak driver commonmode output voltage RL = 54 Ω or 100 Ω, CL = 50 pF, VCC = 3.3 V │IOS│ Driver short-circuit output current -7 V ≤ [VA or VB] ≤ 12 V, or A pin shorted to B pin II Bus input current (driver disabled) VCC = 0 V or 5.5 V VIT+ Positive-going receiver differential-input voltage threshold VIT– Negative-going receiver differential-input voltage threshold VHYS (1) Receiver differential-input voltage threshold hysteresis (VIT+ – VIT– ) VOH Receiver high-level output voltage IOH = –4 mA VOL Receiver low-level output voltage IOL = 4 mA IOZ Receiver high-impedance output current VO = 0 V or VCC, RE = VCC –50 RL = 54 Ω or 100 Ω, CL = 50 pF See Figure 7-2 1 VCC / 2 –50 See Figure 7-2 V 50 mV 3 V 50 mV 200 -250 mV 250 mA Receiver VI = 12 V VI = –7 V 75 –97 –70 -7 V ≤ VCM ≤ 12 V 100 –70 –45 µA mV –200 –150 mV 30 50 mV VCC – 0.4 VCC – 0.2 0.2 V 0.4 V –1 1 µA –5 5 µA 1500 1800 µA 1000 1500 µA 2 4.1 µA 1700 3000 µA 1300 2500 µA 3 6.9 µA Logic IIN Input current (D, SHDN, RE) Supply Driver and receiver enabled ICC ICC Supply current (quiescent) Supply current (quiescent) VCC = 3.6 V VCC = 5.5 V SHDN = VCC, RE Driver enabled, receiver disabled = VCC, D=0, no load Driver and receiver disabled SHDN = 0, no load Driver and receiver enabled SHDN = VCC, RE = 0 D = 0, no load SHDN = VCC, RE Driver enabled, receiver disabled = VCC, D=0, no load Driver and receiver disabled (1) 6 SHDN = VCC, RE = 0 D = 0, no load SHDN = 0, no load Under any specific conditions, VIT+ isspecified to be at least VHYS higher thanVIT–. Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: THVD1406 THVD1426 THVD1406, THVD1426 www.ti.com SLLSF87A – MAY 2021 – REVISED NOVEMBER 2021 6.8 Switching Characteristics (THVD1406) over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT 200 300 600 ns 275 500 ns 10 ns ns Driver tr, tf Driver differential output rise and fall times tPHL, tPLH Driver propagation delay tSK(P) Driver pulse skew, |tPHL – tPLH| tPHZ, tPLZ Driver disable time tPZH, tPZL tdevice_autodir See Figure 7-3 Receiver enabled Driver enable time See Figure 7-4 and Figure 7-5 Receiver disabled Driver active time in the auto-direction mode when SHDN is high and D turns from low to high Driver active time in the auto-direction mode when SHDN is high and D switches from low to high Figure 7-8 4 80 200 200 650 ns 5 10 µs 8 14 µs 6 20 ns 40 110 ns 7 ns 15 60 ns 80 150 ns TYP MAX UNIT 8 25 ns 17 35 ns 3.5 ns 15 38 ns 15 70 ns 5 10 µs 0.8 1.45 µs 4 16 ns 40 75 ns 5 ns 15 25 ns 80 170 ns Receiver tr, tf Receiver output rise and fall times tPHL, tPLH Receiver propagation delay time tSK(P) Receiver pulse skew, |tPHL – tPLH| tPHZ, tPLZ Receiver disable time See Figure 7-7 tPZL(1), tPZH(1) Receiver enable time Driver enabled See Figure 7-6 See Figure 7-7 6.9 Switching Characteristics (THVD1426) over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN Driver tr, tf Driver differential output rise and fall times tPHL, tPLH Driver propagation delay tSK(P) Driver pulse skew, |tPHL – tPLH| tPHZ, tPLZ Driver disable time tPZH, tPZL tdevice_autodir Driver enable time See Figure 7-3 Receiver enabled See Figure 7-4 and Figure 7-5 Receiver disabled Driver active time in Driver active time in the auto-direction the auto-direction mode mode when SHDN is high and D turns from when SHDN is high and low to high D switches from low to high Figure 7-8 0.4 Receiver tr, tf Receiver output rise and fall times tPHL, tPLH Receiver propagation delay time tSK(P) Receiver pulse skew, |tPHL – tPLH| tPHZ, tPLZ Receiver disable time See Figure 7-7 Receiver enable time Driver enabled tPZL(1), tPZ H(1) See Figure 7-6 See Figure 7-7 Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: THVD1406 THVD1426 7 THVD1406, THVD1426 www.ti.com SLLSF87A – MAY 2021 – REVISED NOVEMBER 2021 6.10 Typical Characteristics 6 Driver Output Voltage (V) 5 Driver Differential Output Voltage (V) VOH (VCC=5V) VOL (VCC=5V) 5.5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 10 20 30 40 50 60 Driver Output Current (mA) 70 5 4.8 4.6 4.4 4.2 4 3.8 3.6 3.4 3.2 3 2.8 2.6 2.4 80 VCC = 5 V 0 D001 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 Driver Output Current (mA) D002 D001_driver_vout_iout.grf DE = VCC D002_driver_vdiff.grf TA = 25°C D=0V Figure 6-1. Driver Output voltage vs Driver Output Current TA = 25°C Figure 6-2. Driver Differential Output voltage vs Driver Output Current 66 350 63 Fall time (VCC=5V) Rise time (VCC=5V) 345 Driver Rise and Fall Time (ns) Driver Output Current (mA) DE = VCC 60 57 54 51 48 45 42 39 340 335 330 325 320 315 36 33 3 3.25 3.5 3.75 4 4.25 4.5 Vcc (V) 4.75 5 5.25 310 -40 5.5 -20 0 20 D003 40 60 80 Temperature (qC) 100 DE = VCC D004_rise_fall.grf D = VCC Figure 6-3. Driver Output Current vs Supply Voltage 140 D004 D003_Iout_vcc.grf RL = 54 Ω TA = 25°C 120 RL = 54 Ω CL = 50 pF Figure 6-4. Driver Rise or Fall Time vs Temperature (THVD1406) 75 320 tPHL (ns) VCC=5V tPLH (ns) VCC=5V 315 VCC=5V Supply Current (mA) Propgation Delay (ns) 70 310 305 300 295 290 65 60 55 285 280 -40 50 -20 0 20 40 60 80 Temperature (qC) 100 120 140 0 50 100 D005 150 200 250 300 350 Signaling Rate (kbps) D005_prop_delay.grf RL = 54 Ω CL = 50 pF 8 450 500 D006 D006_Icc_datarate.grf RL = 54 Ω Figure 6-5. Driver Propagation Delay vs Temperature (THVD1406) 400 TA = 25°C Figure 6-6. Supply Current vs Signal Rate (THVD1406) Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: THVD1406 THVD1426 THVD1406, THVD1426 www.ti.com SLLSF87A – MAY 2021 – REVISED NOVEMBER 2021 11 21 Rise Time (V CC = 5 V ) Fall Time (V CC = 5 V) tPHL (VCC = 5 V) tPLH (VCC = 5 V) 20 10 Propagation Delay (ns) Driver Rise Fall Time (ns) 10.5 9.5 9 8.5 8 7.5 19 18 17 16 15 7 14 6.5 6 -40 -20 0 RL = 54 Ω 20 40 60 80 Temperature (C) 100 120 13 -40 140 CL = 50 pF -20 0 20 40 60 80 Temperature (C) RL = 54 Ω Figure 6-7. Driver Rise or Fall Time vs Temperature (THVD1426) 100 120 140 CL = 50 pF Figure 6-8. Driver Propagation Delay vs Temperature (THVD1426) 65 Supply Current (mA) VCC = 5 V 60 55 50 0 RL = 54 Ω 2000 4000 6000 8000 Signaling Rate (kbps) 10000 12000 TA = 25°C Figure 6-9. Supply Current vs Signal Rate (THVD1426) Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: THVD1406 THVD1426 9 THVD1406, THVD1426 www.ti.com SLLSF87A – MAY 2021 – REVISED NOVEMBER 2021 7 Parameter Measurement Information 375  Vcc SHDN A D Vtest VOD 0V or Vcc RL + B 375 Figure 7-1. Measurement of Driver Differential Output Voltage With Common-Mode Load A 0V or Vcc A D RL/2 VA B VB VOD RL/2 B CL VOC(PP) VOC ûVOC(SS) VOC Figure 7-2. Measurement of Driver Differential and Common-Mode Output With RS-485 Load Vcc Vcc SHDN A D Input Generator 50 VI 50% VI VOD RL= 54  0V tPHL tPLH CL= 50 pF 90% 50% 10% B VOD tr ~2 V ~ – tf V Figure 7-3. Measurement of Driver Differential Output Rise and Fall Times and Propagation Delays A S1 D SHDN Input Generator 50% VI RL = 110  B CL = 50 pF 50 VI Vcc VO 0V tPZH 90% VOH 50% VO ~ ~ 0V tPHZ Figure 7-4. Measurement of Driver Enable and Disable Times With Active High Output and Pull-Down Load VCC RL = 110  A SHDN Input Generator VI 50 S1 B VO Vcc 50% VI tPZL CL = 50 pF VO 0 V tPLZ ≈ Vcc 50% 10% VOL Figure 7-5. Measurement of Driver Enable and Disable Times With Active Low Output and Pull-up Load 10 Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: THVD1406 THVD1426 THVD1406, THVD1426 www.ti.com SLLSF87A – MAY 2021 – REVISED NOVEMBER 2021 3V A R VO Input Generator 50 Ÿ VI 1.5V B 0V tPLH tPHL VOH 90% CL=15 pF 50% RE 0V 50 % VI VOD 10 % tr VOL tf Figure 7-6. Measurement of Receiver Output Rise and Fall Times and Propagation Delays Vcc VCC Vcc VI 50% 0V SHDN 0V or Vcc A D VO R B tPZH(1) 1k tPHZ S1 VO CL=15 pF 90% 50%  0V RE tPZL(1) Input Generator 50  VI D at Vcc S1 to GND VOH tPLZ D at 0V S1 to Vcc VCC VO 50% 10% VOL Figure 7-7. Measurement of Receiver Enable/Disable Times With Driver Enabled 0V SHDN A D Input Generator VI 50 Vcc D Vcc VOD B RL= 54  ~ 2V CL= 50 pF VOD tdevice_auto-dir ~0 V ~– V Figure 7-8. Measurement of Auto-direction Control Timing Parameter (tdevice_auto-dir) Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: THVD1406 THVD1426 11 THVD1406, THVD1426 www.ti.com SLLSF87A – MAY 2021 – REVISED NOVEMBER 2021 8 Detailed Description 8.1 Overview The THVD1406 is a low-power, half-duplex RS-485 transceiver suitable for data transmission up to 500 kbps. The THVD1426 is a low-power, half-duplex RS-485 transceiver suitable for data transmission up to 12 Mbps. 8.2 Functional Block Diagrams VCC R RE A SHDN B D GND 8.3 Feature Description Internal ESD protection circuits protect the transceiver against Electrostatic Discharges (ESD) according to IEC 61000-4-2 of up to ±12 kV (Contact Discharge), ±15 kV (Air Gap Discharge) and against electrical fast transients (EFT) according to IEC 61000-4-4 of up to ±4 kV. 8.4 Device Functional Modes When the shutdown pin, SHDN, is logic high, the differential outputs A and B follow the logic states at data input D. When D is low, the output states reverse, B turns high, A becomes low, and VOD is negative. A logic high at D causes A to turn high and B to turn low for a duration. In this case, the differential output voltage defined as VOD = VA – VB is positive for tdevice-auto-dir. After this duration, the driver turns off and the receiver is enabled. The device can be used in auto-direction mode by tying SHDN and RE pins together to logic high and controlling the driver and receiver using the data input pin, D. This enables reducing the number of GPIO pins or the number of isolation channels required to operate the device. Please refer to Driver Function Table and Receiver Function Table for further details. When SHDN is low, both the driver and the receiver are turned off and the device is in shutdown mode. In this condition, the logic state at D is irrelevant. The SHDN pin has an internal pull-up resistor to VCC; thus, when left open, the driver is status is dependent on the status of the D pin. The D pin has an internal pull-up resistor to VCC, thus, when left open while the driver is enabled for tdevice-auto-dir, before bring disabled. Table 8-1. Driver Function Table INPUT ENABLE D SHDN A OUTPUTS B H H/OPEN H L FUNCTION Actively drive bus high for tdevice-auto-dir and then bus is in high impedance L H/OPEN L H Actively drive bus low X L Z Z Driver disabled. Device in shutdown mode. OPEN H/OPEN H L Actively drive bus high for tdevice-auto-dir and then bus is in high impedance When the receiver enable pin, RE, is logic low, the receiver is enabled. When the differential input voltage defined as VID = VA – VB is positive and higher than the positive input threshold, VIT+, the receiver output, R, turns high. When VID is negative and lower than the negative input threshold, VIT-, the receiver output, R, turns low. If VID is between VIT+ and VIT- the output is indeterminate. When RE is logic high or left open and D input is logic low, the receiver output is high-impedance and the magnitude and polarity of VID are irrelevant. Internal biasing of the receiver inputs causes the output to go 12 Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: THVD1406 THVD1426 THVD1406, THVD1426 www.ti.com SLLSF87A – MAY 2021 – REVISED NOVEMBER 2021 failsafe-high when the transceiver is disconnected from the bus (open-circuit), the bus lines are shorted (shortcircuit), or the bus is not actively driven (idle bus). When RE is logic high or left open and D input switches from logic low to logic high, the receiver output is high-impedance for the duration of tdevice-auto-dir. After the duration of tdevice-auto-dir, the receiver turns ON and outputs a logic high or low depending upon the differntial bus input voltage. Table 8-2. Receiver Function Table DIFFERENTIAL INPUT ENABLE INPUT OUTPUT VID = VA – VB RE D R VIT+ < VID L X H Receive valid bus high VIT- < VID < VIT+ L X ? Indeterminate bus state VID < VIT- L X L Receive valid bus low X H/OPEN L Z Receiver disabled Receiver disabled by for tdevice_autodir after D switches from L to H. Receiver output follows bus input voltage after tdevice_autodir FUNCTION X H/OPEN H Z for tdevice_autodir followed by L or H depending upon bus input voltage Open-circuit bus L X H Fail-safe high output Short-circuit bus L X H Fail-safe high output Idle (terminated) bus L X H Fail-safe high output Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: THVD1406 THVD1426 13 THVD1406, THVD1426 www.ti.com SLLSF87A – MAY 2021 – REVISED NOVEMBER 2021 9 Application Information Disclaimer Note Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes, as well as validating and testing their design implementation to confirm system functionality. 9.1 Application Information The THVD14x6 devices are half-duplex RS-485 transceivers commonly used for asynchronous data transmissions. The device can be used in auto-direction mode by tying SHDN and RE pins together to logic high and controlling the driver and receiver using the data input pin, D. This enables reducing the number of GPIO pins or the number of isolation channels required to operate the device. Please refer to Driver Function Table and Receiver Function Table for further details. 9.2 Typical Application An RS-485 bus consists of multiple transceivers connecting in parallel to a bus cable. To eliminate line reflections, each cable end is terminated with a termination resistor, RT, whose value matches the characteristic impedance, Z0, of the cable. This method, known as parallel termination, allows for higher data rates over longer cable length. R R RE B SHDN D R A R A RT RT D A B SHDN D B A R D B R D R RE RE SHDN D D R RE SHDN D Figure 9-1. Typical RS-485 Network With Half-Duplex Transceivers 9.2.1 Design Requirements RS-485 is a robust electrical standard suitable for long-distance networking that may be used in a wide range of applications with varying requirements, such as distance, data rate, and number of nodes. 9.2.1.1 Data Rate and Bus Length There is an inverse relationship between data rate and cable length, which means the higher the data rate, the shorter the cable length; and conversely, the lower the data rate, the longer the cable length. While most RS-485 systems use data rates between 10 kbps and 100 kbps, some applications require data rates up to 300 kbps at distances of 4000 feet and longer. Longer distances are possible by allowing for small signal jitter of up to 5 or 10%. 14 Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: THVD1406 THVD1426 THVD1406, THVD1426 www.ti.com SLLSF87A – MAY 2021 – REVISED NOVEMBER 2021 9.2.1.2 Stub Length When connecting a node to the bus, the distance between the transceiver inputs and the cable trunk, known as the stub, should be as short as possible. Stubs present a non-terminated piece of bus line which can introduce reflections as the length of the stub increases. As a general guideline, the electrical length, or round-trip delay, of a stub should be less than one-tenth of the rise time of the driver, thus giving a maximum physical stub length as shown in Equation 1. L(STUB) ≤ 0.1 × tr × v × c (1) where • • • tr is the 10/90 rise time of the driver c is the speed of light (3 × 108 m/s) v is the signal velocity of the cable or trace as a factor of c 9.2.1.3 Bus Loading The RS-485 standard specifies that a compliant driver must be able to driver 32 unit loads (UL), where 1 unit load represents a load impedance of approximately 12 kΩ. Because the THVD14x6 devices consist of 1/8 UL transceivers, connecting up to 256 receivers to the bus is possible. 9.2.1.4 Receiver Failsafe The differential receivers of the THVD14x6 are failsafe to invalid bus states caused by the following: • Open bus conditions, such as a disconnected connector • Shorted bus conditions, such as cable damage shorting the twisted-pair together • Idle bus conditions that occur when no driver on the bus is actively driving In any of these cases, the differential receiver outputs a failsafe logic high state so that the output of the receiver is not indeterminate. Receiver failsafe is accomplished by offsetting the receiver thresholds such that the input indeterminate range does not include zero volts differential. To comply with the RS-422 and RS-485 standards, the receiver output must output a high when the differential input VID is more positive than 200 mV, and must output a low when VID is more negative than –200 mV. The receiver parameters which determine the failsafe performance are VIT+, VIT–, and VHYS (the separation between VIT+ and VIT–). As shown in the Electrical Characteristics table, differential signals more negative than –200 mV always causes a low receiver output, and differential signals more positive than 200 mV always causes a high receiver output. When the differential input signal is close to zero, it is still above the VIT+ threshold, and the receiver output is high. Only when the differential input is more than VHYS below VIT+ does the receiver output transition to a low state. Therefore, the noise immunity of the receiver inputs during a bus fault conditions includes the receiver hysteresis value, VHYS, as well as the value of VIT+. Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: THVD1406 THVD1426 15 THVD1406, THVD1426 www.ti.com SLLSF87A – MAY 2021 – REVISED NOVEMBER 2021 9.2.1.5 Transient Protection The bus pins of the THVD14x6 transceiver family include on-chip ESD protection against ±16-kV HBM and ±8-kV IEC 61000-4-2 contact discharge. The International Electrotechnical Commission (IEC) ESD test is far more severe than the HBM ESD test. The 50% higher charge capacitance, C(S), and 78% lower discharge resistance, R(D), of the IEC model produce significantly higher discharge currents than the HBM model. R(C) R(D) High-Voltage Pulse Generator 330 Ω (1.5 kΩ) Device Under Test 150 pF (100 pF) C(S) Current (A) 50 M (1 M) 40 35 30 10-kV IEC 25 20 15 10 5 0 0 50 100 10-kV HBM 150 200 250 300 Time (ns) Figure 9-2. HBM and IEC ESD Models and Currents in Comparison (HBM Values in Parenthesis) The on-chip implementation of IEC ESD protection significantly increases the robustness of equipment. Common discharge events occur because of human contact with connectors and cables. Designers may choose to implement protection against longer duration transients, typically referred to as surge transients. EFTs are generally caused by relay-contact bounce or the interruption of inductive loads. Surge transients often result from lightning strikes (direct strike or an indirect strike which induce voltages and currents), or the switching of power systems, including load changes and short circuit switching. These transients are often encountered in industrial environments, such as factory automation and power-grid systems. Figure 9-3 compares the pulse-power of the EFT and surge transients with the power caused by an IEC ESD transient. The left hand diagram shows the relative pulse-power for a 0.5-kV surge transient and 4-kV EFT transient, both of which dwarf the 10-kV ESD transient visible in the lower-left corner. 500-V surge transients are representative of events that may occur in factory environments in industrial and process automation. 22 20 18 16 14 12 10 8 6 4 2 0 Pulse Power (MW) Pulse Power (kW) The right hand diagram shows the pulse-power of a 6-kV surge transient, relative to the same 0.5-kV surge transient. 6-kV surge transients are most likely to occur in power generation and power-grid systems. 0.5-kV Surge 4-kV EFT 10-kV ESD 0 5 10 15 20 25 30 35 40 3.0 2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 6-kV Surge 0.5-kV Surge 0 5 10 15 20 25 30 35 40 Time (µs) Time (µs) Figure 9-3. Power Comparison of ESD, EFT, and Surge Transients 16 Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: THVD1406 THVD1426 THVD1406, THVD1426 www.ti.com SLLSF87A – MAY 2021 – REVISED NOVEMBER 2021 In the event of surge transients, high-energy content is characterized by long pulse duration and slow decaying pulse power. The electrical energy of a transient that is dumped into the internal protection cells of a transceiver is converted into thermal energy, which heats and destroys the protection cells, thus destroying the transceiver. Figure 9-4 shows the large differences in transient energies for single ESD, EFT, surge transients, and an EFT pulse train that is commonly applied during compliance testing. 1000 100 Surge 10 1 Pulse Energy (J) EFT Pulse Train 0.1 0.01 EFT 10-3 10-4 ESD 10-5 10-6 0.5 1 2 4 6 8 10 15 Peak Pulse Voltage (kV) Figure 9-4. Comparison of Transient Energies Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: THVD1406 THVD1426 17 THVD1406, THVD1426 www.ti.com SLLSF87A – MAY 2021 – REVISED NOVEMBER 2021 9.2.2 Detailed Design Procedure In order to protect bus nodes against high-energy transients, the implementation of external transient protection devices is necessary. Figure 9-5 suggests a protection circuit against 1 kV surge (IEC 61000-4-5) transients. Table 9-1 shows the associated bill of materials. 5V 100nF 100nF 10k VCC R1 R RxD MCU/ UART DIR RE A SHDN B TVS D TxD R2 10k GND Figure 9-5. Transient Protection Against Surge Transients for Half-Duplex Devices Table 9-1. Bill of Materials DEVICE FUNCTION ORDER NUMBER MANUFACTURER(1) XCVR RS-485 transceiver THVD1406 TI 10-Ω, pulse-proof thick-film resistor CRCW0603010RJNEAHP Vishay Bidirectional 400-W transient suppressor CDSOT23-SM712 Bourns R1 R2 TVS (1) See the Third-Party Products Disclaimer 9.2.3 Application Curves SHDN = REB = 5 V VCC = 5 V TA = 25 °C Figure 9-6. THVD1426 Waveforms Showing Auto-Direction Control Using D Input 10 Power Supply Recommendations To ensure reliable operation at all data rates and supply voltages, each supply should be decoupled with a 100 nF ceramic capacitor located as close to the supply pins as possible. This helps to reduce supply voltage ripple present on the outputs of switched-mode power supplies and also helps to compensate for the resistance and inductance of the PCB power planes. 18 Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: THVD1406 THVD1426 THVD1406, THVD1426 www.ti.com SLLSF87A – MAY 2021 – REVISED NOVEMBER 2021 11 Layout 11.1 Layout Guidelines Robust and reliable bus node design often requires the use of external transient protection devices in order to protect against surge transients that may occur in industrial environments. Since these transients have a wide frequency bandwidth (from approximately 3 MHz to 300 MHz), high-frequency layout techniques should be applied during PCB design. 1. Place the protection circuitry close to the bus connector to prevent noise transients from propagating across the board. 2. Use VCC and ground planes to provide low inductance. Note that high-frequency currents tend to follow the path of least impedance and not the path of least resistance. 3. Design the protection components into the direction of the signal path. Do not force the transient currents to divert from the signal path to reach the protection device. 4. Apply 100-nF to 220-nF decoupling capacitors as close as possible to the VCC pins of transceiver, UART and/or controller ICs on the board. 5. Use at least two vias for VCC and ground connections of decoupling capacitors and protection devices to minimize effective via inductance. 6. Use 1-kΩ to 10-kΩ pull-up resistors for RE and SHDN lines to connect them together to VCC to reduce the number of GPIO lines to MCU or the number of isolation channels. 7. Insert pulse-proof resistors into the A and B bus lines if the TVS clamping voltage is higher than the specified maximum voltage of the transceiver bus pins. These resistors limit the residual clamping current into the transceiver and prevent it from latching up. 8. While pure TVS protection is sufficient for surge transients up to 1 kV, higher transients require metal-oxide varistors (MOVs) which reduce the transients to a few hundred volts of clamping voltage, and transient blocking units (TBUs) that limit transient current to less than 1 mA. 11.2 Layout Example 5 R MCU RE VCC B 1 R R 7 SHDN D Via to VCC 4 A 5 R GND JMP R 6 R Via to ground C TVS 5 Figure 11-1. Layout Example Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: THVD1406 THVD1426 19 THVD1406, THVD1426 www.ti.com SLLSF87A – MAY 2021 – REVISED NOVEMBER 2021 Figure 11-2. Layout Example for Co-layout of SOIC (D) and SOT (DRL) Packages 20 Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: THVD1406 THVD1426 THVD1406, THVD1426 www.ti.com SLLSF87A – MAY 2021 – REVISED NOVEMBER 2021 12 Device and Documentation Support 12.1 Device Support 12.1.1 Third-Party Products Disclaimer TI'S PUBLICATION OF INFORMATION REGARDING THIRD-PARTY PRODUCTS OR SERVICES DOES NOT CONSTITUTE AN ENDORSEMENT REGARDING THE SUITABILITY OF SUCH PRODUCTS OR SERVICES OR A WARRANTY, REPRESENTATION OR ENDORSEMENT OF SUCH PRODUCTS OR SERVICES, EITHER ALONE OR IN COMBINATION WITH ANY TI PRODUCT OR SERVICE. 12.2 Receiving Notification of Documentation Updates To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on Subscribe to updates to register and receive a weekly digest of any product information that has changed. For change details, review the revision history included in any revised document. 12.3 Support Resources TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight from the experts. Search existing answers or ask your own question to get the quick design help you need. Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. 12.4 Trademarks TI E2E™ is a trademark of Texas Instruments. All trademarks are the property of their respective owners. 12.5 Electrostatic Discharge Caution This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. 12.6 Glossary TI Glossary This glossary lists and explains terms, acronyms, and definitions. 13 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: THVD1406 THVD1426 21 PACKAGE OPTION ADDENDUM www.ti.com 5-Aug-2023 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) Samples (4/5) (6) THVD1406DR ACTIVE SOIC D 8 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 1406 Samples THVD1406DRLR ACTIVE SOT-5X3 DRL 8 4000 RoHS & Green Call TI | SN Level-1-260C-UNLIM -40 to 125 T406 Samples THVD1426DR ACTIVE SOIC D 8 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 1426 Samples THVD1426DRLR ACTIVE SOT-5X3 DRL 8 4000 RoHS & Green Call TI | SN Level-1-260C-UNLIM -40 to 125 T426 Samples (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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