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TL5209
SLVS581B – SEPTEMBER 2006 – REVISED JUNE 2015
TL5209 500-mA Low-Noise Low-Dropout Voltage Regulator With Shutdown
1 Features
3 Description
•
•
•
The TL5209 device is 500-mA low-dropout (LDO)
regulator that is well suited for portable applications.
It has a lower quiescent current than most traditional
PNP regulators and allows for a shutdown current of
0.05 μA (typical). The TL5209 also has very good
dropout voltage characteristics, requiring a maximum
dropout of 10 mV at light loads and 500 mV at full
load. In addition, the LDO also has a 1% output
voltage accuracy and very tight line and load
regulation that is comparable to its CMOS
counterparts.
1
•
•
•
•
•
•
•
•
•
Adjustable Output Voltage
1%/2% Accuracy (25°C/Full Range)
500-mV (Maximum) Dropout at Full Load of
500 mA
Tight Regulation Overtemperature Range
– 0.1%/V (Maximum) Line Regulation
– 0.7% (Maximum) Load Regulation
Ultra Low-Noise Capability (300 nV/√Hz Typical)
Shutdown Current of 3 μA (Maximum)
Low Temperature Coefficient
Current Limiting and Thermal Protection
Stable With Minimum Load of 1 mA
Reverse-Battery Protection
Applications
– Portable Applications (PDAs, Laptops,
Cell Phones)
– Consumer Electronics
– Post-Regulation for SMPS
Available in Convenient SOIC-8 Surface-Mount
Package
For noise-sensitive applications, the TL5209 allows
for low-noise capability through an external bypass
capacitor connected to the BYP pin, which reduces
the output noise of the regulator. Other features
include current limiting, thermal shutdown, reversebattery protection, and low temperature coefficient.
The TL5209 is available with adjustable output.
Offered in an SOIC-8 surface-mount package, the
TL5209 is characterized for operation over the virtual
junction temperature ranges of –40°C to 125°C.
Device Information(1)
PART NUMBER
TL5209
2 Applications
•
•
•
•
PACKAGE
SOIC (8)
BODY SIZE (NOM)
4.90 mm × 3.91 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Set-Top Boxes
PCs and Notebooks
EPOS
Building Automation
4 Typical Application Schematic
VIN
IN
1 µF
OUT
VOUT
R1
EN
GND
ADJ/BYP
470 pF
2.2 µF
R2
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TL5209
SLVS581B – SEPTEMBER 2006 – REVISED JUNE 2015
www.ti.com
Table of Contents
1
2
3
4
5
6
7
8
Features ..................................................................
Applications ...........................................................
Description .............................................................
Typical Application Schematic.............................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
1
2
3
3
7.1
7.2
7.3
7.4
7.5
7.6
3
3
3
4
4
5
Absolute Maximum Ratings ....................................
ESD Ratings..............................................................
Recommended Operating Conditions......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Typical Characteristics ..............................................
Detailed Description ............................................ 12
8.1 Overview ................................................................. 12
8.2 Functional Block Diagram ....................................... 12
8.3 Feature Description................................................. 12
8.4 Device Functional Modes........................................ 12
9
Application and Implementation ........................ 13
9.1 Application Information............................................ 13
9.2 Typical Application .................................................. 13
10 Power Supply Recommendations ..................... 16
11 Layout................................................................... 16
11.1 Layout Guidelines ................................................. 16
11.2 Layout Example .................................................... 16
12 Device and Documentation Support ................. 17
12.1
12.2
12.3
12.4
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
17
17
17
17
13 Mechanical, Packaging, and Orderable
Information ........................................................... 17
5 Revision History
Changes from Revision A (May 2007) to Revision B
•
2
Page
Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section .................................................................................................. 1
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SLVS581B – SEPTEMBER 2006 – REVISED JUNE 2015
6 Pin Configuration and Functions
D Package
8-Pin SOIC
Top View
EN
IN
OUT
ADJ/BYP
1
8
2
7
3
6
4
5
GND
GND
GND
GND
Pin Functions
PIN
NAME
NO.
I/O
DESCRIPTION
ADJ/BYP
4
I
Adjust/Bypass pin, forces a constant voltage of 1.242 V to allow for adjusting the output
voltage with external resistors. A bypass capacitance can be used on this pin to slow down
the ramp up of the output voltage.
EN
1
I
Control input, active high
GND
5-8
-
Ground
IN
2
I
Input voltage
OUT
3
O
Output voltage
7 Specifications
Absolute Maximum Ratings (1)
7.1
over operating free-air temperature range (unless otherwise noted)
VI
Continuous input voltage
VO
Output voltage
Tstg
Storage temperature
(1)
MIN
MAX
–20
20
UNIT
7.5
V
–65
150
°C
V
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
7.2 ESD Ratings
VALUE
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001
V(ESD)
(1)
(2)
7.3
Electrostatic discharge
(1)
UNIT
±2500
Charged device model (CDM), per JEDEC specification JESD22C101 (2)
V
±1000
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
Recommended Operating Conditions
VI
Input voltage
VO
Output voltage
VEN
Enable input voltage
TJ
Operating junction temperature
MIN
MAX
2.5
16
V
6.5
V
0
VI
V
–40
125
°C
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UNIT
3
TL5209
SLVS581B – SEPTEMBER 2006 – REVISED JUNE 2015
www.ti.com
7.4 Thermal Information
TL5209
THERMAL METRIC (1)
D [SOIC]
UNIT
8 PINS
RθJA
Junction-to-ambient thermal resistance
116.1
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
61.6
°C/W
RθJB
Junction-to-board thermal resistance
56.3
°C/W
ψJT
Junction-to-top characterization parameter
14.9
°C/W
ψJB
Junction-to-board characterization parameter
55.8
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
n/a
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
7.5 Electrical Characteristics
VIN = VOUT + 1 V, COUT = 4.7 μF, IOUT = 1 mA, full range TJ = –40°C to 125°C
PARAMETER
Output voltage accuracy
αVOUT
TEST CONDITIONS
VOUT = 2.5 V for ADJ only
Output voltage
temperature coefficient
Line regulation
VIN = (VOUT + 1 V) to 16 V
Load regulation
IOUT = 1 mA to 500 mA (1)
IOUT = 50 mA
VIN – VOUT Dropout voltage (2)
IOUT = 100 mA
IOUT = 500 mA
VEN ≥ 3 V, IOUT = 1 mA
VEN ≥ 3 V, IOUT = 50 mA
Quiescent current
VEN ≥ 3 V, IOUT = 100 mA
VEN ≥ 3 V, IOUT = 500 mA
Imin
Minimum load current (3)
ISD
Shutdown current
MIN
–1%
1%
–40°C to 125°C
–2%
2%
–40°C to 125°C
IOUT = 1 mA
IQ
TJ
25°C
25°C
25°C
Ripple rejection
ILIMIT
(1)
(2)
(3)
4
Current limit
0.05%
25°C
60
115
175
80
250
150
350
140
650
2
8
20
3
–40°C to 125°C
25
–40°C to 125°C
1
25°C
0.05
25°C
0.1
–40°C to 125°C
mA
mA
3
μA
8
25°C
75
25°C
700
–40°C to 125°C
μA
900
1.2
–40°C to 125°C
25°C
500
170
–40°C to 125°C
25°C
mV
600
100
–40°C to 125°C
25°C
250
300
350
–40°C to 125°C
25°C
%/V
0.5%
45
–40°C to 125°C
25°C
0.05
0.7%
–40°C to 125°C
25°C
UNIT
ppm/°C
0.1
–40°C to 125°C
f = 120 Hz
VOUT = 0 V
0.009
–40°C to 125°C
25°C
MAX
40
–40°C to 125°C
VEN ≤ 0.4 V
VEN ≤ 0.18 V
TYP
dB
900
1000
mA
Low duty cycle testing is used to maintain the junction temperature as close to the ambient temperature as possible. Changes in output
voltage due to thermal effects are covered separately by the thermal regulation specification.
Dropout is defined as the input to output differential at which the output drops 2% below its nominal value measured at 1-V differential.
For stability across the input voltage and temperature. For ADJ versions, the minimum current can be set by R1 and R2.
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Electrical Characteristics (continued)
VIN = VOUT + 1 V, COUT = 4.7 μF, IOUT = 1 mA, full range TJ = –40°C to 125°C
PARAMETER
ΔVOUT/ΔP
TEST CONDITIONS
Thermal regulation (4)
D
Vn
VEN
IEN
Output noise
Enable input current
(5)
TYP
25°C
0.05
VOUT = 2.5 V, IOUT = 50 mA,
COUT = 2.2 μF, CBYP = 0
25°C
500
IOUT = 50 mA,
COUT = 2.2 μF,
CBYP = 470 pF (5)
25°C
300
MAX
UNIT
%/W
nV/√Hz
25°C
0.4
–40°C to 125°C
0.18
VEN = logic HIGH (enabled)
25°C
VEN ≤ 0.4 V (shutdown)
25°C
0.01
–1
VEN ≤ 0.18 V (shutdown)
–40°C to 125°C
0.01
–2
5
20
VEN ≥ 2 V (enabled)
(4)
MIN
VIN = 16 V, 500-mA load
pulse for t = 10 ms
VEN = logic LOW
(shutdown)
Enable logic voltage
TJ
V
2
25°C
–40°C to 125°C
μA
25
Thermal regulation is defined as the change in output voltage at a specified time after a change in power dissipation is applied,
excluding line and load regulation effects.
CBYP is optional and connected to the BYP/ADJ pin.
7.6 Typical Characteristics
0
0
VIN = 3.5 V
-10
COUT = 2.2 µF
-20
CBYP = 0 µF
-30
IOUT = 1 mA
-20
-30
-40
PSRR – dB
PSRR – dB
-10
-50
-60
-70
COUT = 2.2 µF
CBYP = 0.01 µF
IOUT = 1 mA
-40
-50
-60
-70
-80
-80
-90
-90
-100
-110
10
1.E+01
VIN = 3.5 V
100
1.E+02
1k
1.E+03
10k
1.E+04
100k
1.E+05
1M
1.E+06
-100
1.E+01
10
1.E+02
100
1.E+03
1k
1.E+04
10k
1.E+05
100k
1.E+06
1M
Frequency – Hz
Frequency – Hz
Figure 1. Power Supply Rejection Ratio
Figure 2. Power Supply Rejection Ratio
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Typical Characteristics (continued)
-10
0
VIN = 3.5 V
-20
COUT = 2.2 µF
-30
CBYP = 0.01 µF
IOUT = 10 mA
-30
-50
-40
PSRR – dB
PSRR – dB
COUT = 2.2 µF
-20
CBYP = 0 µF
IL = 10 mA
-40
VIN = 3.5 V
-10
-60
-70
-50
-60
-80
-70
-90
-80
-90
-100
-110
10
1.E+01
100
1.E+02
1k
1.E+03
10k
1.E+04
100k
1.E+05
-100
1.E+01
10
1M
1.E+06
1.E+02
100
VIN = 3.5 V
-10
1.E+06
1M
CBYP = 0 µF
COUT = 2.2 µF
CBYP = 0.01 µF
-20
IOUT = 100 mA
-30
VIN = 3.5 V
-10
COUT = 2.2 µF
-20
IOUT = 100 mA
-30
-40
PSRR – dB
PSRR – dB
1.E+05
100k
0
0
-50
-60
-40
-50
-60
-70
-70
-80
-80
-90
-90
-100
1.E+01
10
1.E+02
100
1.E+03
1k
1.E+04
10k
1.E+05
100k
-100
10
1.E+01
1.E+06
1M
100
1.E+02
1k
1.E+03
10k
1.E+04
100k
1.E+05
1M
1.E+06
Frequency – Hz
Frequency – Hz
Figure 6. Power Supply Rejection Ratio
Figure 5. Power Supply Rejection Ratio
120
120
VOUT = 2.5 V
110
COUT = 2.2 µF
100
CBYP = 0 µF
IL = 1 mA
110
IL = 10 mA
VOUT = 2.5 V
100
90
90
80
80
IL = 100 mA
70
PSRR – dB
PSRR – dB
1.E+04
10k
Figure 4. Power Supply Rejection Ratio
Figure 3. Power Supply Rejection Ratio
60
50
IL = 1 mA
COUT = 2.2 µF
CBYP = 0.01 µF
IL = 10 mA
70
60
50
40
40
30
30
20
20
10
10
IL = 100 mA
0
0
0
6
1.E+03
1k
Frequency – Hz
– Hz
f –Frequency
Frequency
– Hz
0.1
0.2
0.3
0.4
0
0.5
0.1
0.2
0.3
0.4
0.5
Voltage Drop – V
Voltage Drop – V
Figure 7. Power Supply Ripple Rejection vs Voltage Drop
Figure 8. Power Supply Ripple Rejection vs Voltage Drop
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Typical Characteristics (continued)
0.7
0.8
VIN = 3.5 V
COUT = 2.2 µF
0.7
0.6
IL = 100 mA
CBYP = 0 µF
Noise
– µV/√Hz
Noise
– µV/sqrt(Hz)
Noise
– µV/√Hz
Noise
– µV/sqrt(Hz)
0.6
IL = 100 mA
0.5
IL = 10 mA
0.4
IL = 1 mA
0.3
0.2
IL = 1 mA
0.5
0.4
IL = 10 mA
0.3
0.2
VIN = 3.5 V
0.1
0.1
COUT = 2.2 µF
CBYP = 0.01 µF
0
10
1.E+01
100
1.E+02
1k
1.E+03
10k
1.E+04
0
10
1.E+01
100k
1.E+05
100
1.E+02
Figure 9. Noise Performance
2.55
VOUT = 2.5 V
450
2.54
COUT = 2.2 µF
2.53
CBYP = 0
400
VOUT – Output Voltage – V
VDO – Dropout Voltage – mV
100k
1.E+05
Figure 10. Noise Performance
500
350
300
250
200
150
IL = 1 mA
2.51
2.50
2.49
2.48
2.47
50
2.46
0
VIN = 3.5 V
COUT = 4.7 µF
2.52
100
0
2.45
-40 -25 -10
50 100 150 200 250 300 350 400 450 500
5
20 35
50 65 80 95 110 125
IL – Load Current – mA
TA – Temperature – °C
Figure 11. Dropout Voltage vs Load Current
Figure 12. Output Voltage vs Temperature
2
20
VIN = 3.5 V
18
1.8
COUT = 4.7 µF
16
CIN = 1 µF
IGND – GND Pin Current – mA
IGND – GND Pin Current – mA
10k
1.E+04
1k
1.E+03
Frequency – Hz
Frequency – Hz
14
12
10
8
6
4
2
1.6
IL = 100 mA
1.4
1.2
1
0.8
0.6
0.4
IL = 1 mA
0.2
0
0
0
50 100 150 200 250 300 350 400 450 500
0
1
2
3
4
5
6
7
8
IL – Load Current – mA
VCC – Supply Voltage – V
Figure 13. Ground Current vs Load Current
Figure 14. Ground Current vs Supply Voltage
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Typical Characteristics (continued)
20
2.53
VIN = 3.5 V
18
IL = 500 mA
VOUT – Output Voltage – V
IGND – GND Pin Current – mA
COUT = 4.7 µF
2.52
16
14
12
10
8
6
4
IL = 1 mA to 500 mA
2.51
TA = 25°C
2.50
TA = 125°C
2.49
2.48
TA = -40°C
2
2.47
0
0
1
2
3
4
5
6
7
0
8
50 100 150 200 250 300 350 400 450 500
VCC – Supply Voltage – V
IL – Load Current – mA
Figure 15. Ground Current vs Supply Voltage
Figure 16. Output Voltage vs Load Current
10
10
VIN = 3.5 V
VIN = 3.5 V
COUT = 1 µF
COUT = 2.2 µF
VENB = 2 V
Output Impedance – Ωℵ
Output Impedance – Ω♦
VENB = 2 V
IL = 1 mA
1
IL = 10 mA
IL = 100 mA
0.1
0.01
10
1.E+01
100
1.E+02
1k
1.E+03
10k
1.E+04
100k
1.E+05
IL = 1 mA
1
IL = 10 mA
IL = 100 mA
0.1
0.01
10
1.E+01
1M
1.E+06
100
1.E+02
1k
1.E+03
Frequency – Hz
100k
1.E+05
1M
1.E+06
Figure 17. Output Impedance vs Frequency
Figure 18. Output Impedance vs Frequency
2.55
0.5
VIN = 3.5 V to 16 V
2.54
VIN = 3.5 V
COUT = 4.7 µF
2.53
COUT = 4.7 µF
0.4
IL = 1 mA
2.52
Load Regulation – %
VOUT – Output Voltage – V
10k
1.E+04
Frequency – Hz
2.51
2.50
TA = 25°C
2.49
TA = 125°C
2.48
TA = -40°C
2.47
IL = 1 mA to 500 mA
0.3
0.2
0.1
2.46
2.45
3
6
9
12
15
18
VIN – Input Voltage – V
5
20
35 50
65
80
95 110 125
TA – Temperature – °C
Figure 19. Output Voltage vs Input Voltage
8
0
-40 -25 -10
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Figure 20. Load Regulation
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Typical Characteristics (continued)
COUT = 10 µF
0.01
VIN = 3.5 V
VIN = 3.5 V to 16 V
IL = 100 µA
0.006
0.004
0.002
0
-50
-25
0
25
50
75
100
125
VENB = 2 V
100
CIN = 1 µF
1
Change in
Output Voltage (mV)
Line Regulation – %/V
0.008
Load (mA)
COUT = 4.7 µF
10
0
-10
TA – Temperature – °C
Time (25 µs/div)
Figure 21. Line Regulation
COUT = 2.2 µF
VIN = 3.5 V
CIN = 1 µF
COUT = 10 µF
VIN = 3.5 V
VENB = 2 V
500
100
CIN = 1 µF
1
Change in Output Voltage (mV)
Change in Output
Voltage (mV)
Load (mA)
VENB = 2 V
Load (mA)
Figure 22. Load Transient Response
1
10
0
-10
Time (25 µs/div)
20
0
-20
Time (25 µs/div)
Figure 23. Load Transient Response
Figure 24. Load Transient Response
500
CIN = 1 µF
100
Change in Output Voltage (mV)
Change in
Output Voltage (mV)
Load (mA)
VIN = 3.5 V
VENB = 2 V
Input Voltage (V)
COUT = 10 µF
40
20
0
-20
COUT = 1 µF
IL = 1 mA
4.5
3.5
20
10
0
-10
Time (500 µs/div)
Time (25 µs/div)
Figure 25. Load Transient Response
Figure 26. Line Transient Response
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3.5
Input Voltage (V)
COUT = 2.2 µF
IL = 1 mA
4.5
Change in Output Voltage (mV)
Change in Output Voltage (mV)
Input Voltage (V)
Typical Characteristics (continued)
20
10
0
-10
Time (500 µs/div)
3.5
20
10
0
-10
Time (500 µs/div)
Figure 28. Line Transient Response
Change in Output Voltage (mV) Input Voltage (V)
Change in Output Voltage (mV)
Input Voltage (V)
Figure 27. Line Transient Response
COUT = 2.2 µF
IL = 100 mA
4.5
3.5
20
10
0
-10
Time (500 µs/div)
3.5
20
10
0
-10
Time (500 µs/div)
Enable Voltage (V)
3.5
Figure 30. Line Transient Response
Output Voltage (mV)
Change in Output Voltage (mV) Input Voltage (V)
4.5
20
10
0
-10
COUT = 1 µF
IL = 500 mA
4.5
Figure 29. Line Transient Response
COUT = 2.2 µF
IL = 500 mA
COUT = 1 µF
IL = 100 mA
4.5
2
0
2
1
COUT = 1 µF
VIN = 3.5 V
0
ILOAD = 10 mA
CIN = 1 µF
Time (500 µs/div)
Time (50 µs/div)
Figure 31. Line Transient Response
10
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Figure 32. Turnon Time
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Enable Voltage (V)
2
0
2
1
COUT = 1 µF
VIN = 3.5 V
0
ILOAD = 500 mA
CIN = 1 µF
Output Voltage (mV)
Output Voltage (mV)
Enable Voltage (V)
Typical Characteristics (continued)
2
0
2
1
COUT = 2.2 µF
VIN = 3.5 V
0
ILOAD = 10 mA
CIN = 1 µF
Time (50 µs/div)
Time (50 µs/div)
Figure 34. Turnon Time
1000
2
COUT = 2.2 µF
ISC – Short-Circuit Current Limit – mA
Output Voltage (mV)
Enable Voltage (V)
Figure 33. Turnon Time
0
2
1
COUT = 2.2 µF
VIN = 3.5 V
0
ILOAD = 500 mA
CIN = 1 µF
900
800
700
600
500
3
6
9
12
15
18
VCC – Supply Voltage – V
Time (50 µs/div)
Figure 36. Short-Circuit Current vs Supply Voltage
800
CIN = 1 µF
VIN = 3.5 V
CIN = 1 µF
VIN = 16 V
COUT = 4.7 µF
VOUT = 0 V
COUT = 4.7 µF
VOUT = 0 V
1000
Short-Circuit Current – mA
Short-Circuit Current – mA
Figure 35. Turnon Time
600
400
200
0
900
800
600
400
200
0
Time – 25 ms/div
Time – 10 ms/div
Figure 37. Short-Circuit Current vs Time
Figure 38. Short-Circuit Current vs Time
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Product Folder Links: TL5209
11
TL5209
SLVS581B – SEPTEMBER 2006 – REVISED JUNE 2015
www.ti.com
8 Detailed Description
8.1 Overview
The TL5209 device is a low-dropout (LDO) regulator with an input voltage range from 2.5 V to 16 V and a
maximum output current of 500 mA. The output voltage can be adjusted using external resistors (R1 and R2)
and has an accuracy of 1% to 2% depending on the ambient temperature. The maximum voltage drop across the
device varies from 10 mV to 500 mV depending on the current load at the output.
8.2 Functional Block Diagram
IN
OUT
VOUT
VIN
COUT
R1
ADJ/BYP
+
−
Bandgap
Reference
CBYP
(optional)
R2
EN
Current Limiting and
Thermal Shutdown
GND
Figure 39. Low-Noise Adjustable Regulator
8.3 Feature Description
8.3.1 Enable and Shutdown
The EN pin is CMOS-logic compatible. When EN is held high (>2 V), the regulator is active. Likewise, applying a
low signal (
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