TL5580, TL5580A
DUAL LOW-NOISE WIDE-BANDWIDTH PRECISION AMPLIFIER
www.ti.com
SLOS477A – JUNE 2005 – REVISED JULY 2005
FEATURES
APPLICATIONS
•
•
•
•
•
•
•
•
•
•
•
•
Operating Voltage…±2 V to ±18 V
Low Offset Voltage…1 mV Max at 25°C,
TL5580A
Wide GBW…12 MHz Typ
Slew Rate…5 V/µs Typ
Low THD…0.0005% Typ
Low-Noise Voltage…7 nV/√Hz at 1 kHz Typ
Audio
Test Equipment
Industrial Process Controls
Data-Acquisition Systems
Active Filters
Power-Supply Regulation
D, P, OR PW PACKAGE
(TOP VIEW)
1OUT
1IN−
1IN+
VCC−
1
8
2
7
3
6
4
5
VCC+
2OUT
2IN−
2IN+
DESCRIPTION/ORDERING INFORMATION
The TL5580 is a dual bipolar operational amplifier that combines both high dc and ac performance with its low
offset voltage, high-gain bandwidth, low harmonic distortion, and low-noise characteristics. In addition, its output
is capable of driving 600-Ω loads. All these characteristics make the device ideally suited for use in audio, active
filtering, and industrial measurement applications.
ORDERING INFORMATION
TA
VIO
(25°C, MAX)
PACKAGE (1)
PDIP – P
Standard grade
1.5 mV
SOIC – D
TSSOP – PW
–40°C to 85°C
PDIP – P
A grade
1 mV
SOIC – D
TSSOP – PW
(1)
ORDERABLE PART NUMBER
Tube of 50
TL5580IP
Tube of 75
TL5580ID
Reel of 2500
TL5580IDR
Tube of 150
TL5580IPW
Reel of 2000
TL5580IPWR
Tube of 50
TL5580AIP
Tube of 75
TL5580AID
Reel of 2500
TL5580AIDR
Tube of 150
TL5580AIPW
Reel of 2000
TL5580AIPWR
TOP-SIDE MARKING
TL5580IP
Z5580
Z5580
TL5580AIP
Z5580A
Z5580A
Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available at
www.ti.com/sc/package.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2005, Texas Instruments Incorporated
TL5580, TL5580A
DUAL LOW-NOISE WIDE-BANDWIDTH PRECISION AMPLIFIER
www.ti.com
SLOS477A – JUNE 2005 – REVISED JULY 2005
EQUIVALENT SCHEMATIC
VCC+
Output
− Input
+ Input
VCC−
2
TL5580, TL5580A
DUAL LOW-NOISE WIDE-BANDWIDTH PRECISION AMPLIFIER
www.ti.com
SLOS477A – JUNE 2005 – REVISED JULY 2005
Absolute Maximum Ratings
(1)
over operating free-air temperature range (unless otherwise noted)
MAX
UNIT
VCC±
Supply voltage
MIN
±18
V
VI
Input voltage (any input)
±15
V
VID
Differential input voltage
±30
V
IO
Output current
±50
mA
D package
θJA
Package thermal
impedance (2) (3)
97
P package
85
PW package
TJ
Operating virtual junction temperature
Tstg
Storage temperature range
(1)
(2)
(3)
°C/W
149
–60
150
°C
125
°C
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating
conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
Maximum power dissipation is a function of TJ(max), θJA, and TA. The maximum allowable power dissipation at any allowable ambient
temperature is PD = (TJ(max) – TA)/θJA. Operating at the absolute maximum TJ of 150°C can affect reliability.
The package thermal impedance is calculated in accordance with JESD 51-7.
Recommended Operating Conditions
VCC+
VCC–
TA
Supply voltage
Operating free-air temperature
MIN
MAX
2
16
–2
–16
–40
85
UNIT
V
°C
3
TL5580, TL5580A
DUAL LOW-NOISE WIDE-BANDWIDTH PRECISION AMPLIFIER
www.ti.com
SLOS477A – JUNE 2005 – REVISED JULY 2005
Electrical Characteristics
VCC± = ±15 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
TL5580A
VIO
αVIO
IIO
Input offset current
IIB
Input bias current
AVD
Large-signal differential-voltage
amplification
Output voltage swing
1
0.3
1.8
25°C
5
–40°C to 85°C
100
–40°C to 85°C
Common-mode input voltage range
CMRR
Common-mode rejection ratio
RS ≤ 10 kΩ,
VICR = –12 V to 12 V
kSVR (1)
Supply-voltage rejection ratio
RS ≤ 10 kΩ
ICC
Supply current (all amplifiers)
25°C
90
87
12.75
– 12.25
–40°C to 85°C
12.5
–12
25°C
±13
–40°C to 85°C
±12
25°C
90
–40°C to 85°C
85
25°C
85
–40°C to 85°C
83
25°C
–40°C to 85°C
75
500
800
–40°C to 85°C
RL ≥ 2 kΩ
5
100
25°C
RL ≥ 2 kΩ, VO = ±10 V
1.5
UNIT
mV
2
–40°C to 85°C
VICR
(1)
MAX
0.3
–40°C to 85°C
25°C
VOM
TYP
1.35
25°C
TL5580
Average temperature coefficient of input
offset voltage
MIN
–40°C to 85°C
RS ≤ 10 kΩ
Input offset voltage
TA
25°C
110
µV/°C
nA
nA
dB
±13.5
V
±13.5
V
110
dB
110
6
dB
9
12
mA
Measured with VCC± varied simultaneously
Operating Characteristics
VCC± = ±15 V, TA = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
SR
Slew rate at unity gain
RL ≥ 2 kΩ
GBW
Gain bandwidth product
f = 10 kHz
THD
Total harmonic distortion
VO = 5 V, RL = 2 kΩ, f = 1 kHz, AVD = 20 dB
Vn
Equivalent input noise voltage
f = 1 kHz
4
TYP
UNIT
5
V/µs
12
MHz
0.0005
7
%
nV/√Hz
TL5580, TL5580A
DUAL LOW-NOISE WIDE-BANDWIDTH PRECISION AMPLIFIER
www.ti.com
SLOS477A – JUNE 2005 – REVISED JULY 2005
TYPICAL CHARACTERISTICS
MAXIMUM OUTPUT VOLTAGE SWING
vs
LOAD RESISTANCE
MAXIMUM OUTPUT VOLTAGE SWING
vs
FREQUENCY
30
VO − Maximum Output Voltage Swing − V
VO − Maximum Output Voltage Swing − V
15
VCC± = ±15 V
TA = 25°C
10
VOM+
5
0
−5
VOM−
−10
25
20
15
10
−15
1k
100
V+/V− = ±15 V
RL = 2 kΩ
TA = 25°C
5
0
1
5
10 50 60 70 80 100 200 300 500 700 1M 10M
10k
Frequency − kHz
RL − Load Resistance − Ω
Figure 1.
Figure 2.
OUTPUT VOLTAGE SWING
vs
OUTPUT CURRENT
EQUIVALENT INPUT NOISE VOLTAGE
vs
FREQUENCY
Vn − Equivalent Input Noise Voltage − nV/ Hz
20
VCC± = ±15 V
VO − Output Voltage Swing − V
15
VOM+
10
5
0
−5
−10
VOM−
−15
−20
1
10
100
IO − Output Current − mA
Figure 3.
1000
30
VCC± = ±1.5 V
RS = 50 Ω
AV = 60 dB
TA = 25°C
20
10
0
10
100
1k
Frequency − Hz
10k
100k
Figure 4.
5
TL5580, TL5580A
DUAL LOW-NOISE WIDE-BANDWIDTH PRECISION AMPLIFIER
www.ti.com
SLOS477A – JUNE 2005 – REVISED JULY 2005
TYPICAL CHARACTERISTICS (continued)
OPERATING CURRENT
vs
TEMPERATURE
OUTPUT VOLTAGE SWING
vs
TEMPERATURE
18
15
VCC± = ±15 V
VOM+
V O − Output Voltage Swing − V
ICC − Operating Current − mA
16
14
12
10
8
6
4
VCC± = 15 V
RL = 2 kΩ
10
5
0
−5
−10
2
VOM−
0
−55
−15
−40
0
25
70
85
125
−55
TA − Ambient Temperature − °C
0
25
70
85
105
TA − Ambient Temperature − °C
Figure 5.
Figure 6.
INPUT OFFSET VOLTAGE
vs
TEMPERATURE
INPUT BIAS CURRENT
vs
TEMPERATURE
400
0
VCC± = ±15 V
Five Representative Units
VCC± = ±15 V
−50
IIB − Input Bias Current − nA
VIO − Input Offset Voltage − µV
−40
−100
−150
−200
−250
−300
−350
−400
300
200
100
−450
−500
−40 −30 −20 −10 0
10 20 30 40 50 60 70 80 90
TA − Ambient Temperature − °C
Figure 7.
6
0
−40
0
25
70
TA − Ambient Temperature − °C
Figure 8.
85
TL5580, TL5580A
DUAL LOW-NOISE WIDE-BANDWIDTH PRECISION AMPLIFIER
www.ti.com
SLOS477A – JUNE 2005 – REVISED JULY 2005
TYPICAL CHARACTERISTICS (continued)
MAXIMUM OUTPUT VOLTAGE SWING
vs
OPERATING VOLTAGE
OPERATING CURRENT
vs
OPERATING VOLTAGE
7
+VOM
6
10
5
0
−5
−10
5
4
3
2
−VOM
1
−15
±5
0
0.1
±10
±15
0
±0
±20
±2
±4
±8
±10
Figure 9.
Figure 10.
TOTAL HARMONIC DISTORTION
vs
OUTPUT VOLTAGE
VOLTAGE GAIN, PHASE
vs
FREQUENCY
VCC± = ±15 V
RL = 2 kΩ
40-dB Amplification
TA = 25°C
40
Voltage Gain − dB
0.01
20 kHz
20 Hz
30
1
VO − Output Voltage − V
Figure 11.
10
0
−30
−90
25
−120
20
−150
15
−180
10
−210
5
−240
0
0.1
±16
−60
Phase
Gain
1 kHz
±14
30
45
35
0.0001
±12
VCC+/VCC− − Operating Voltage − V
VCC± = ±15 V
Gain = 20 dB
RL = 2 kΩ
0.001
±6
VCC+/VCC− − Operating Voltage − V
10k
100k
1M
Frequency − Hz
Phase − Deg
15
−20
THD − Total Harmonic Distortion − %
TA = 25°C
TA = 25°C
RL = 2 kΩ
ICC − Operating Current − mA
V O − Maximum Output Voltage Swing − V
20
−270
10M
Figure 12.
7
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
TL5580AID
ACTIVE
SOIC
D
8
75
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
Z5580A
TL5580AIDR
ACTIVE
SOIC
D
8
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
Z5580A
TL5580AIP
ACTIVE
PDIP
P
8
50
RoHS & Green
NIPDAU
N / A for Pkg Type
-40 to 85
TL5580AIP
TL5580AIPWR
ACTIVE
TSSOP
PW
8
2000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
Z5580A
TL5580IDR
ACTIVE
SOIC
D
8
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
Z5580
TL5580IP
ACTIVE
PDIP
P
8
50
RoHS & Green
NIPDAU
N / A for Pkg Type
-40 to 85
TL5580IP
TL5580IPWR
ACTIVE
TSSOP
PW
8
2000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
Z5580
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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