SLAS043G − MAY 1991 − REVISED NOVEMBER 2003
D Power Dissipation . . . 40 mW Max
D Advanced LinEPIC Single-Poly Process
D
D
D
D
D
J† OR DW PACKAGE
(TOP VIEW)
Provides Close Capacitor Matching for
Better Accuracy
Fast Parallel Processing for DSP and µP
Interface
Either External or Internal Clock Can Be
Used
Conversion Time . . . 6 µs
Total Unadjusted Error . . . ±1 LSB Max
CMOS Technology
REF+
REF −
ANLG GND
AIN
ANLG VDD
DGTL GND1
DGTL GND2
DGTL VDD1
DGTL VDD2
EOC
D0
D1
description
The TLC1550x and TLC1551 are data acquisition
analog-to-digital converters (ADCs) using a 10-bit,
switched-capacitor, successive-approximation network. A high-speed, 3-state parallel port directly
interfaces to a digital signal processor (DSP) or
microprocessor (µP) system data bus. D0 through
D9 are the digital output terminals with D0 being
the least significant bit (LSB). Separate power
terminals for the analog and digital portions
minimize noise pickup in the supply leads.
Additionally, the digital power is divided into two
parts to separate the lower current logic from the
higher current bus drivers. An external clock can be
applied to CLKIN to override the internal system
clock if desired.
1
24
2
23
3
22
4
21
5
20
6
19
7
18
8
17
9
16
10
15
11
14
12
13
RD
WR
CLKIN
CS
D9
D8
D7
D6
D5
D4
D3
D2
† Refer to the mechanical data for the JW
package.
ANLG GND
REF−
REF+
NC
RD
WR
CLKIN
FK OR FN PACKAGE
(TOP VIEW)
AIN
ANLG VDD
DGTL GND1
NC
DGTL GND2
DGTL VDD1
DGTL VDD2
4
3 2 1 28 27 26
25
6
24
7
23
8
22
9
21
10
20
11
19
12 13 14 15 16 17 18
CS
D9
D8
NC
D7
D6
D5
EOC
D0
D1
NC
D2
D3
D4
The TLC1550I and TLC1551I are characterized for
operation from − 40°C to 85°C. The TLC1550M is
characterized over the full military range of − 55°C
to 125°C.
5
NC − No internal connection
AVAILABLE OPTIONS
PACKAGE
TA
CERAMIC CHIP CARRIER
(FK)
PLASTIC CHIP CARRIER
(FN)
CERAMIC DIP
(J)
SOIC
(DW)
−40°C to 85°C
—
TLC1550IFN
TLC1551IFN
—
TLC1550IDW
TLC1551IDW
−55°C to 125°C
TLC1550MFK
—
TLC1550MJ
—
This device contains circuits to protect its inputs and outputs against damage due to high static voltages or electrostatic fields. These
circuits have been qualified to protect this device against electrostatic discharges (ESD) of up to 2 kV according to MIL-STD-883C,
Method 3015; however, it is advised that precautions be taken to avoid application of any voltage higher than maximum-rated
voltages to these high-impedance circuits. During storage or handling, the device leads should be shorted together or the device
should be placed in conductive foam. In a circuit, unused inputs should always be connected to an appropriated logic voltage level,
preferably either VCC or ground.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Advanced LinEPIC is a trademark of Texas Instruments.
Copyright 2003, Texas Instruments Incorporated
%0#&!% %" *! &" 0 1$%&!% &!*!" 0# ! "*%0%&!%" * !+* !*#" 0 *2&" "!#*!"
"!&& ,&&!/- !% *""%. *" ! **""&%$/ %$*
!*"!%. 0 &$$ &*!*"-
!" #$%&! !
'
()( &$$ &*!*" &* !*"!*
$*"" !+*,%"* !*- &$$ !+* !" !%
*""%. *" ! **""&%$/ %$* !*"!%. 0 &$$ &*!*"-
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1
SLAS043G − MAY 1991 − REVISED NOVEMBER 2003
functional block diagram
EOC
CS
SuccessiveApproximation
Register
Control
Logic
WR
RD
10
D0 −D9
10
Frequency
Divided by 2
DGTL
VDD1
Internal
Clock
Comp
10-Bit
Capacitor
DAC and S/H
100 kΩ
NOM
Clock Detector
CLKIN
REF +
REF −
AIN
typical equivalent inputs
INPUT CIRCUIT IMPEDANCE DURING SAMPLING MODE
INPUT CIRCUIT IMPEDANCE DURING HOLD MODE
1 kΩ TYP
AIN
AIN
Ci = 60 pF TYP
(equivalent input
capacitance)
2
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SLAS043G − MAY 1991 − REVISED NOVEMBER 2003
Terminal Functions
TERMINAL
NO.†
NAME
NO.‡
DESCRIPTION
ANLG GND
4
3
Analog ground. The reference point for the voltage applied on terminals ANLG VDD, AIN, REF+, and REF−.
AIN
5
4
Analog voltage input. The voltage applied to AIN is converted to the equivalent digital output.
ANLG VDD
6
5
Analog positive power supply voltage. The voltage applied to this terminal is designated VDD3.
CLKIN
26
22
Clock input. CLKIN is used for external clocking instead of using the internal system clock. It usually takes a
few microseconds before the internal clock is disabled. To use the internal clock, CLKIN should be tied high
or left unconnected.
CS
25
21
Chip-select. CS must be low for RD or WR to be recognized by the A/D converter.
D0
13
11
Data bus output. D0 is bit 1 (LSB).
D1
14
12
Data bus output. D1 is bit 2.
D2
16
13
Data bus output. D2 is bit 3.
D3
17
14
Data bus output. D3 is bit 4.
D4
18
15
Data bus output. D4 is bit 5.
D5
19
16
Data bus output. D5 is bit 6.
D6
20
17
Data bus output. D6 is bit 7.
D7
21
18
Data bus output. D7 is bit 8.
D8
23
19
Data bus output. D8 is bit 9.
D9
24
20
Data bus output. D9 is bit 10 (MSB).
7
6
Digital ground 1. The ground for power supply DGTL VDD1 and is the substrate connection
DGTL GND2
9
7
Digital ground 2. The ground for power supply DGTL VDD2
DGTL VDD1
10
8
Digital positive power-supply voltage 1. DGTL VDD1 supplies the logic. The voltage applied to DGTL VDD1 is
designated VDD1.
DGTL VDD2
11
9
Digital positive power-supply voltage 2. DGTL VDD2 supplies only the higher-current output buffers. The voltage
applied to DGTL VDD2 is designated VDD2.
EOC
12
10
End-of-conversion. EOC goes low indicating that conversion is complete and the results have been transferred
to the output latch. EOC can be connected to the µP- or DSP-interrupt terminal or can be continuously polled.
RD
28
24
REF+
2
1
Read input. When CS is low and RD is taken low, the data is placed on the data bus from the output latch. The
output latch stores the conversion results at the most recent negative edge of EOC. The falling edge of RD
resets EOC to a high within the td(EOC) specifications.
Positive voltage-reference input. Any analog input that is greater than or equal to the voltage on REF+ converts
to 1111111111. Analog input voltages between REF + and REF − convert to the appropriate result in a ratiometric
manner.
REF −
3
2
Negative voltage reference input. Any analog input that is less than or equal to the voltage on REF − converts
to 0000000000.
27
23
Write input. When CS is low, conversion is started on the rising edge of WR. On this rising edge, the ADC holds
the analog input until conversion is completed. Before and after the conversion period, which is given by t conv,
the ADC remains in the sampling mode.
DGTL GND1
WR
† Terminal numbers for FK and FN packages.
‡ Terminal numbers for J, DW, and NW packages.
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3
SLAS043G − MAY 1991 − REVISED NOVEMBER 2003
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)†
Supply voltage, VDD1, VDD2, and VDD3 (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.5 V
Input voltage range, VI (any input) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.3 V to VDD + 0.3 V
Output voltage range, VO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.3 V to VDD + 0.3 V
Peak input current (any digital input) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 10 mA
Peak total input current (all inputs) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 30 mA
Operating free-air temperature range, TA: TLC1550I, TLC1551I . . . . . . . . . . . . . . . . . . . . . . . . −40°C to 85°C
TLC1550M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55°C to 125°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65°C to 150°C
Case temperature for 10 seconds: FK or FN package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
Lead temperature 1,6 mm (1/16 inch) from the case for 10 seconds: J or NW package . . . . . . . . . . . . 260°C
† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: VDD1 is the voltage measured at DGTL VDD1 with respect to DGND1. VDD2 is the voltage measured at DGTL VDD2 with respect to the
DGND2. VDD3 is the voltage measured at ANLG VDD with respect to AGND. For these specifications, all ground terminals are tied
together (and represent 0 V). When VDD1, VDD2, and VDD3 are equal, they are referred to simply as VDD.
recommended operating conditions
Supply voltage, VDD1, VDD2, VDD3
MIN
NOM
MAX
4.75
5
5.5
Positive reference voltage, VREF+ (see Note 2)
VDD3
0
Negative reference voltage, VREF− (see Note 2)
Differential reference voltage, VREF+ − VREF − (see Note 2)
Analog input voltage range
0
High-level control input voltage, VIH
2
Low-level control input voltage, VIL
Input clock frequency, f(CLKIN)
0.5
Setup time, CS low before WR or RD goes low, tsu(CS)
Hold time, CS low after WR or RD goes high, th(CS)
WR or RD pulse duration, tw(WR)
Operating free-air temperature, TA
V
V
V
VDD3
VDD3
V
V
V
0.8
V
7.8
MHz
0
ns
0
ns
50
ns
40% of
period
80% of
period
TLC155xI
−40
85
TLC1550M
−55
125
Input clock low pulse duration, tw(L−CLKIN)
UNIT
°C
NOTE 2: Analog input voltages greater than that applied to REF+ convert to all 1s (1111111111), while input voltages less than that applied to
REF − convert to all 0s (0000000000). The total unadjusted error may increase as this differential voltage falls below 4.75 V.
4
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SLAS043G − MAY 1991 − REVISED NOVEMBER 2003
electrical characteristics over recommended operating free-air temperature range,
VDD = VREF+ = 4.75 V to 5.5 V and VREF − = 0 (unless otherwise noted)
PARAMETER
VOH
TEST CONDITIONS
High-level output voltage
VDD = 4.75 V,
VDD = 4.75 V,
IOL = 2.4 mA
VOL
Low-level output voltage
IOZ
Off-state (high-impedance-state) output current
IIH
IIL
High-level input current
VO = VDD,
VO = 0,
VI = VDD
Low-level input current (except CLKIN)
VI = 0
IIL
Low-level input current (CLKIN)
IOS
Short-circuit output current
Input capacitance
Analog inputs
Digital inputs
TYP†
MAX
2.4
V
0.5
CS and RD at VDD
−10
See typical equivalent inputs TLC1550/1I
UNIT
0.4
TA = − 55°C to 125°C
CS and RD at VDD
VO = 5 V,
TA = 25°C
VO = 0,
TA = 25°C
CS low and RD high
I(DD) Operating supply current
Ci
IOH = − 360 µA
TA = 25°C
MIN
10
0.005
2.5
V
A
µA
µA
−2.5
−0.005
µA
−50
−50
µA
7
14
−12
−6
2
8
60
90*
5
15*
mA
mA
pF
* On products compliant to MIL-STD-883, Class B, this parameter is not production tested.
† All typical values are at VDD = 5 V, TA = 25°C.
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5
SLAS043G − MAY 1991 − REVISED NOVEMBER 2003
operating characteristics over recommended operating free-air temperature range with internal
clock and minimum sampling time of 4 µs, VDD = VREF + = 5 V and VREF − = 0 (unless otherwise
noted)
TLC1550I
TA†
Full range
TLC1551I
Full range
PARAMETER
EL
TEST CONDITIONS
Linearity error
See Note 3
TLC1550M
TLC1550I
TLC1551I
EZS
Zero-scale error
±1
± 0.5
25°C
Full range
±1
Full range
± 0.5
±1
± 0.5
25°C
±1
TLC1550I
Full range
± 0.5
TLC1551I
Full range
See Notes 2 and 4
TLC1550M
TLC1550I
TLC1551I
See Note 5
TLC1550M
tc
Conversion time
ta(D)
tv(D)
Data access time after RD goes low
tdis(D)
MAX
Full range
Full-scale error
Total unadjusted error
TYP‡
±1
± 0.5
25°C
Full range
±1
Full range
± 0.5
Full range
±1
25°C
±1
fclock(external) = 4.2 MHz or
internal clock
Data valid time after RD goes high
See Figure 3
LSB
LSB
LSB
LSB
6
µs
35
ns
5
Disable time, delay time from RD high to high
impedance
UNIT
± 0.5
Full range
See Notes 2 and 4
TLC1550M
EFS
MIN
ns
30
ns
td(EOC) Delay time, RD low to EOC high
0
15
ns
† Full range is − 40°C to 85°C for the TL155xI devices and − 55°C to 125°C for the TLC1550M.
‡ All typical values are at VDD = 5 V, TA = 25°C.
NOTES: 2. Analog input voltages greater than that applied to REF+ convert to all 1s (1111111111), while input voltages less than that applied
to REF − convert to all 0s (0000000000). The total unadjusted error may increase as this differential voltage falls below 4.75 V.
3. Linearity error is the difference between the actual analog value at the transition between any two adjacent steps and its ideal value
after zero-scale error and full-scale error have been removed.
4. Zero-scale error is the difference between the actual mid-step value and the nominal mid-step value at specified zero scale.
Full-scale error is the difference between the actual mid-step value and the nominal mid-step value at specified full scale.
5. Total unadjusted error is the difference between the actual analog value at the transition between any two adjacent steps and its
ideal value. It includes contributions from zero-scale error, full-scale error, and linearity error.
6
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SLAS043G − MAY 1991 − REVISED NOVEMBER 2003
PARAMETER MEASUREMENT INFORMATION
Source Current = 6 mA
Test Point
Output
Under Test
See Note A
Vcp = 1 V
CL = 62 pF
Sink Current = 6 mA
Vcp = voltage commutation point for switching between source and sink currents
NOTE A: Equivalent load circuit of the Teradyne A500 tester for timing parameter measurement
Figure 1. Test Load Circuit
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7
SLAS043G − MAY 1991 − REVISED NOVEMBER 2003
APPLICATION INFORMATION
simplified analog input analysis
Using the circuit in Figure 2, the time required to charge the analog input capacitance from 0 to VS within 1/2
LSB can be derived as follows:
The capacitance charging voltage is given by
V
C
+V
ǒ1−e– tcńRtCiǓ
(1)
S
Where:
Rt = Rs + ri
The final voltage to 1/2 LSB is given by
VC (1/2 LSB) = VS − (VS /1024)
(2)
Equating equation 1 to equation 2 and solving for time t c gives
ǒ
ǒ
Ǔ
V * V ń512 + V 1– e
S
S
S
– t cńR tC
Ǔ
i
(3)
and
t c (1/2 LSB) = Rt × Ci × ln(1024)
(4)
Therefore, with the values given, the time for the analog input signal to settle is
t c (1/2 LSB) = (Rs + 1 kΩ) × 60 pF × ln(1024)
(5)
This time must be less than the converter sample time shown in the timing diagrams.
Driving Source†
TLC1550/1
Rs
VS
ri
VI
VC
1 kΩ MAX
Ci
50 pF MAX
VI = Input voltage at AIN
VS = External driving source voltage
Rs = Source resistance
ri = Input resistance
Ci = Input capacitance
† Driving source requirements:
• Noise and distortion for the source must be equivalent to the resolution of the converter.
• Rs must be real at the input frequency.
Figure 2. Input Circuit Including the Driving Source
8
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SLAS043G − MAY 1991 − REVISED NOVEMBER 2003
PRINCIPLES OF OPERATION
The operating sequence for complete data acquisition is shown in Figure 3. Processors can address the TLC1550
and TLC1551 as an external memory device by simply connecting the address lines to a decoder and the decoder
output to CS. Like other peripheral devices, the write (WR) and read (RD) input signals are valid only when CS is low.
Once CS is low, the onboard system clock permits the conversion to begin with a simple write command and the
converted data to be presented to the data bus with a simple read command. The device remains in a sampling (track)
mode from the rising edge of EOC until conversion begins with the rising edge of WR, which initiates the hold mode.
After the hold mode begins, the clock controls the conversion automatically. When the conversion is complete, the
end-of-conversion (EOC) signal goes low indicating that the digital data has been transferred to the output latch.
Lowering CS and RD then resets EOC and transfers the data to the data bus for the processor read cycle.
th(CS)
tsu(CS)
CS
0.8 V
1.4 V
0.8 V
0.8 V
tc
tw(WR)
WR
0.8 V
0.8 V
2V
1.4 V
th(CS)
tsu(CS)
2V
RD
0.8 V
tv(D)
ta(D)
2V
Data Valid
0.8 V
D0 −D9
tdis(D)
2V
0.8 V
td(EOC)
2V
EOC
0.8 V
Figure 3. TLC1550 or TLC1551 Operating Sequence
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9
PACKAGE OPTION ADDENDUM
www.ti.com
14-Oct-2022
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
TLC1550IDW
ACTIVE
SOIC
DW
24
25
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
TLC1550I
Samples
TLC1550IDWR
ACTIVE
SOIC
DW
24
2000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
TLC1550I
Samples
TLC1550IFN
ACTIVE
PLCC
FN
28
37
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
TLC1550IFN
Samples
TLC1551IDW
ACTIVE
SOIC
DW
24
25
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
TLC1551I
Samples
TLC1551IDWR
ACTIVE
SOIC
DW
24
2000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
TLC1551I
Samples
TLC1551IFN
ACTIVE
PLCC
FN
28
37
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
TLC1551IFN
Samples
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of