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TLC277CDR

TLC277CDR

  • 厂商:

    BURR-BROWN(德州仪器)

  • 封装:

    SOIC-8

  • 描述:

    IC OPAMP GP 2 CIRCUIT 8SOIC

  • 详情介绍
  • 数据手册
  • 价格&库存
TLC277CDR 数据手册
TLC272, TLC272A, TLC272B, TLC272Y, TLC277 LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS SLOS091E – OCTOBER 1987 – REVISED FEBRUARY 2002 D Trimmed Offset Voltage: D D D D D D D D 1OUT 1IN – 1IN + GND 1 8 2 7 3 6 4 5 VDD 2OUT 2IN – 2IN + FK PACKAGE (TOP VIEW) NC 1OUT NC VDD NC D TLC277 . . . 500 µV Max at 25°C, VDD = 5 V Input Offset Voltage Drift . . . Typically 0.1 µV/Month, Including the First 30 Days Wide Range of Supply Voltages Over Specified Temperature Range: 0°C to 70°C . . . 3 V to 16 V – 40°C to 85°C . . . 4 V to 16 V – 55°C to 125°C . . . 4 V to 16 V Single-Supply Operation Common-Mode Input Voltage Range Extends Below the Negative Rail (C-Suffix, I-Suffix types) Low Noise . . . Typically 25 nV/√Hz at f = 1 kHz Output Voltage Range Includes Negative Rail High Input impedance . . . 1012 Ω Typ ESD-Protection Circuitry Small-Outline Package Option Also Available in Tape and Reel Designed-In Latch-Up Immunity NC 1IN – NC 1IN + NC 4 3 2 1 20 19 18 5 17 6 16 7 15 8 14 9 10 11 12 13 NC 2OUT NC 2IN – NC NC GND NC 2IN + NC D D, JG, P, OR PW PACKAGE (TOP VIEW) NC – No internal connection description The TLC272 and TLC277 precision dual operational amplifiers combine a wide range of input offset voltage grades with low offset voltage drift, high input impedance, low noise, and speeds approaching those of general-purpose BiFET devices. The extremely high input impedance, low bias currents, and high slew rates make these costeffective devices ideal for applications previously reserved for BiFET and NFET products. Four offset voltage grades are available (C-suffix and I-suffix types), ranging from the low-cost TLC272 (10 mV) to the high-precision TLC277 (500 µV). These advantages, in combination with good common-mode rejection and supply voltage rejection, make these devices a good choice for new state-of-the-art designs as well as for upgrading existing designs. 30 25 Percentage of Units – % These devices use Texas Instruments silicongate LinCMOS technology, which provides offset voltage stability far exceeding the stability available with conventional metal-gate processes. DISTRIBUTION OF TLC277 INPUT OFFSET VOLTAGE 473 Units Tested From 2 Wafer Lots VDD = 5 V TA = 25°C P Package 20 15 10 5 0 – 800 – 400 0 400 VIO – Input Offset Voltage – µV 800 LinCMOS is a trademark of Texas Instruments. Copyright  2002, Texas Instruments Incorporated PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 1 TLC272, TLC272A, TLC272B, TLC272Y, TLC277 LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS SLOS091E – OCTOBER 1987 – REVISED FEBRUARY 2002 description (continued) AVAILABLE OPTIONS PACKAGED DEVICES TA VIOmax AT 25°C SMALL OUTLINE (D) CHIP CARRIER (FK) CERAMIC DIP (JG) PLASTIC DIP (P) TSSOP (PW) CHIP FORM (Y) 0°C to 70°c 500 µV 2 mV 5 mV 10mV TLC277CD TLC272BCD TLC272ACD TLC272CD — — — — — — — — TLC277CP TLC272BCP TLC272ACP TLC272CP — — — TLC272CPW — — — TLC272Y – 40°C to 85°C 500 µV 2 mV 5 mV 10 mV TLC277ID TLC272BID TLC272AID TLC272ID — — — — — — — — TLC277IP TLC272BIP TLC272AIP TLC272IP — — — — — — — — The D package is available taped and reeled. Add R suffix to the device type (e.g., TLC277CDR). In general, many features associated with bipolar technology are available on LinCMOS operational amplifiers without the power penalties of bipolar technology. General applications such as transducer interfacing, analog calculations, amplifier blocks, active filters, and signal buffering are easily designed with the TLC272 and TLC277. The devices also exhibit low voltage single-supply operation, making them ideally suited for remote and inaccessible battery-powered applications. The common-mode input voltage range includes the negative rail. A wide range of packaging options is available, including small-outline and chip carrier versions for high-density system applications. The device inputs and outputs are designed to withstand –100-mA surge currents without sustaining latch-up. The TLC272 and TLC277 incorporate internal ESD-protection circuits that prevent functional failures at voltages up to 2000 V as tested under MIL-STD-883C, Method 3015.2; however, care should be exercised in handling these devices as exposure to ESD may result in the degradation of the device parametric performance. The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from – 40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of – 55°C to 125°C. 2 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 TLC272, TLC272A, TLC272B, TLC272Y, TLC277 LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS SLOS091E – OCTOBER 1987 – REVISED FEBRUARY 2002 equivalent schematic (each amplifier) VDD P3 P4 R6 R1 N5 R2 IN – P5 P1 P6 P2 IN + R5 C1 OUT N3 N1 R3 N2 D1 N4 R4 D2 N6 N7 R7 GND TLC272Y chip information This chip, when properly assembled, displays characteristics similar to the TLC272C. Thermal compression or ultrasonic bonding may be used on the doped-aluminum bonding pads. Chips may be mounted with conductive epoxy or a gold-silicon preform. BONDING PAD ASSIGNMENTS 1IN + (3) (2) 1IN – 2OUT VDD (8) + (1) + (7) – 60 1OUT – (5) (6) 2IN + 2IN – (4) GND CHIP THICKNESS: 15 TYPICAL BONDING PADS: 4 × 4 MINIMUM TJmax = 150°C TOLERANCES ARE ± 10%. ALL DIMENSIONS ARE IN MILS. 73 POST OFFICE BOX 655303 PIN (4) IS INTERNALLY CONNECTED TO BACKSIDE OF CHIP. • DALLAS, TEXAS 75265 3 TLC272, TLC272A, TLC272B, TLC272Y, TLC277 LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS SLOS091E – OCTOBER 1987 – REVISED FEBRUARY 2002 absolute maximum ratings over operating free-air temperature range (unless otherwise noted)† Supply voltage, VDD (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 V Differential input voltage, VID (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± VDD Input voltage range, VI (any input) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 0.3 V to VDD Input current, II . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 5 mA output current, IO (each output) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 30 mA Total current into VDD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 mA Total current out of GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 mA Duration of short-circuit current at (or below) 25°C (see Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . unlimited Continuous total dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Dissipation Rating Table Operating free-air temperature, TA: C suffix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C I suffix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 40°C to 85°C M suffix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 55°C to 125°C Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 65°C to 150°C Case temperature for 60 seconds: FK package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds: D, P, or PW package . . . . . . . . . . . . 260°C Lead temperature 1,6 mm (1/16 inch) from case for 60 seconds: JG package . . . . . . . . . . . . . . . . . . . . 300°C † Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTES: 1. All voltage values, except differential voltages, are with respect to network ground. 2. Differential voltages are at IN+ with respect to IN –. 3. The output may be shorted to either supply. Temperature and/or supply voltages must be limited to ensure that the maximum dissipation rating is not exceeded (see application section). DISSIPATION RATING TABLE PACKAGE TA ≤ 25°C POWER RATING DERATING FACTOR ABOVE TA = 25°C TA = 70°C POWER RATING TA = 85°C POWER RATING TA = 125°C POWER RATING D 725 mW 5.8 mW/°C 464 mW 377 mW N/A FK 1375 mW 11 mW/°C 880 mW 715 mW 275 mW JG 1050 mW 8.4 mW/°C 672 mW 546 mW 210 mW P 1000 mW 8.0 mW/°C 640 mW 520 mW N/A PW 525 mW 4.2 mW/°C 336 mW N/A N/A recommended operating conditions Supply voltage, VDD Common mode input voltage, Common-mode voltage VIC VDD = 5 V VDD = 10 V Operating free-air temperature, TA 4 POST OFFICE BOX 655303 C SUFFIX I SUFFIX M SUFFIX MIN MAX MIN MAX MIN MAX 3 16 4 16 4 16 – 0.2 3.5 – 0.2 3.5 0 3.5 – 0.2 8.5 – 0.2 8.5 0 8.5 0 70 – 40 85 – 55 125 • DALLAS, TEXAS 75265 UNIT V V °C TLC272, TLC272A, TLC272B, TLC272Y, TLC277 LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS SLOS091E – OCTOBER 1987 – REVISED FEBRUARY 2002 electrical characteristics at specified free-air temperature, VDD = 5 V (unless otherwise noted) PARAMETER TEST CONDITIONS TA† TLC272C, TLC272AC, TLC272BC, TLC277C MIN VIO TLC272C VO = 1.4 V, RS = 50 Ω, VIC = 0, RL = 10 kΩ TLC272AC VO = 1.4 V, RS = 50 Ω, VIC = 0, RL = 10 kΩ Input offset voltage TLC272BC TLC277C αVIO Temperature coefficient of input offset voltage IIO Input offset current (see Note 4) VO = 1.4 V, RS = 50 Ω, VIC = 0, RL = 10 kΩ VO = 1.4 V, RS = 50 Ω, VIC = 0, RL = 10 kΩ 2 5 V, V VO = 2.5 IIB VICR VOH VOL AVD CMRR kSVR IDD 25V VIC = 2.5 Input bias current (see Note 4) 25°C VID = 100 mV, Low-level Low level out output ut voltage VID = –100 100 mV, Large-signal Large signal differential voltage am amplification lification Common-mode Common mode rejection ratio VO = 0.25 V to 2 V, RL = 10 kΩ IOL = 0 RL = 10 kΩ VIC = VICRmin Supply-voltage S l lt rejection j ti ratio ti (∆VDD /∆VIO) VDD = 5 V to 10 V, Supply y current ((two amplifiers)) VO = 2.5 2 5 V, V No load VO = 1.4 V VIC = 2.5 2 5 V, V MAX 1.1 10 Full range UNIT 12 25°C 0.9 5 230 2000 Full range mV 6.5 25°C Full range 3000 25°C 200 Full range 500 µV V 1500 25°C to 70°C 1.8 25°C 0.1 60 70°C 7 300 25°C 0.6 60 70°C 40 600 25°C – 0.2 to 4 Full range – 0.2 to 3.5 25°C 3.2 3.8 0°C 3 3.8 70°C 3 3.8 Common mode in Common-mode input ut voltage range (see Note 5) High-level output High level out ut voltage TYP µV/°C – 0.3 to 4.2 pA pA V V V 25°C 0 50 0°C 0 50 70°C 0 50 25°C 5 23 0°C 4 27 70°C 4 20 25°C 65 80 0°C 60 84 70°C 60 85 25°C 65 95 0°C 60 94 70°C 60 96 mV V/mV dB dB 25°C 1.4 3.2 0°C 1.6 3.6 70°C 1.2 2.6 mA † Full range is 0°C to 70°C. NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically. 5. This range also applies to each input individually. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 5 TLC272, TLC272A, TLC272B, TLC272Y, TLC277 LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS SLOS091E – OCTOBER 1987 – REVISED FEBRUARY 2002 electrical characteristics at specified free-air temperature, VDD = 10 V (unless otherwise noted) PARAMETER TEST CONDITIONS TA† TLC272C, TLC272AC, TLC272BC, TLC277C MIN VIO TLC272C VO = 1.4 V, RS = 50 Ω, VIC = 0, RL = 10 kΩ TLC272AC VO = 1.4 V, RS = 50 Ω, VIC = 0, RL = 10 kΩ Input offset voltage TLC272BC TLC277C αVIO Temperature coefficient of input offset voltage IIO Input offset current (see Note 4) VO = 1.4 V, RS = 50 Ω, VO = 1.4 V, RS = 50 Ω, VICR VOH VOL AVD CMRR kSVR IDD VIC = 0, RL = 10 kΩ VIC = 5 V Input bias current (see Note 4) VID = 100 mV, Low-level Low level out output ut voltage VID = –100 100 mV, Large-signal Large signal differential voltage am amplification lification Common-mode Common mode rejection ratio VO = 1 V to 6 V, RL = 10 kΩ IOL = 0 RL = 10 kΩ VIC = VICRmin Supply-voltage S l lt rejection j ti ratio ti (∆VDD /∆VIO) VDD = 5 V to 10 V, Supply y current ((two amplifiers)) VO = 5 V, V No load VO = 1.4 V VIC = 5 V, V 1.1 10 0.9 5 290 2000 Full range POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 mV 6.5 25°C Full range 3000 25°C 250 Full range 800 µV V 1900 µV/°C 2 25°C 0.1 60 70°C 7 300 25°C 0.7 60 70°C 50 600 25°C – 0.2 to 9 Full range – 0.2 to 8.5 – 0.3 to 9.2 pA pA V V 25°C 8 8.5 0°C 7.8 8.5 70°C 7.8 8.4 V 25°C 0 50 0°C 0 50 70°C 0 50 25°C 10 36 0°C 7.5 42 70°C 7.5 32 25°C 65 85 0°C 60 88 70°C 60 88 25°C 65 95 0°C 60 94 70°C 60 96 mV V/mV dB dB 25°C 1.9 4 0°C 2.3 4.4 70°C 1.6 3.4 † Full range is 0°C to 70°C. NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically. 5. This range also applies to each input individually. 6 UNIT 12 25°C Common mode in Common-mode input ut voltage range (see Note 5) High-level output High level out ut voltage MAX Full range 25°C to 70°C V VO = 5 V, IIB VIC = 0, RL = 10 kΩ 25°C TYP mA TLC272, TLC272A, TLC272B, TLC272Y, TLC277 LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS SLOS091E – OCTOBER 1987 – REVISED FEBRUARY 2002 electrical characteristics at specified free-air temperature, VDD = 5 V (unless otherwise noted) PARAMETER TEST CONDITIONS TA† TLC272I, TLC272AI, TLC272BI, TLC277I MIN VIO TLC272I VO = 1.4 V, RS = 50 Ω, VIC = 0, RL = 10 kΩ TLC272AI VO = 1.4 V, RS = 50 Ω, VIC = 0, RL = 10 kΩ Input offset voltage TLC272BI TLC277I αVIO Temperature coefficient of input offset voltage IIO Input offset current (see Note 4) VO = 1.4 V, RS = 50 Ω, VIC = 0, RL = 10 kΩ VO = 1.4 V, RS = 50 Ω, VIC = 0, RL = 10 kΩ 2 5 V, V VO = 2.5 IIB 25V VIC = 2.5 Input bias current (see Note 4) 25°C VOL AVD CMRR kSVR VID = 100 mV, Low-level Low level out output ut voltage VID = –100 100 mV, L Large-signal i l differential diff ti l voltage lt amplification lifi ti Common-mode Common mode rejection ratio VO = 1 V to 6 V, RL = 10 kΩ IOL = 0 RL = 10 kΩ VIC = VICRmin S l lt j ti ratio ti Supply-voltage rejection (∆VDD /∆VIO) VDD = 5 V to 10 V, Supply y current ((two amplifiers)) VO = 2.5 2 5 V, V No load VO = 1.4 V 10 0.9 5 230 2000 Full range Full range 3500 200 25°C Full range 500 25°C to 85°C 1.8 25°C 0.1 60 85°C 24 15 25°C 0.6 60 85°C 200 35 – 0.2 to 4 µV/°C – 0.3 to 4.2 – 0.2 to 3.5 25°C 3.2 3.8 – 40°C 3 3.8 85°C 3 3.8 V 25°C 0 50 – 40°C 0 50 85°C 0 50 25°C 5 23 – 40°C 3.5 32 85°C 3.5 19 25°C 65 80 – 40°C 60 81 85°C 60 86 25°C 65 95 – 40°C 60 92 85°C 60 96 mV V/mV dB dB 3.2 1.9 4.4 1.1 85°C † Full range is – 40°C to 85°C. NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically. 5. This range also applies to each input individually. 2.4 • DALLAS, TEXAS 75265 pA V 1.4 POST OFFICE BOX 655303 pA V 25°C VIC = 2.5 2 5 V, V µV V 2000 – 40°C IDD mV 7 25°C Common mode in Common-mode input ut voltage range (see Note 5) High-level High level out output ut voltage 1.1 UNIT 13 25°C Full range VOH MAX Full range 25°C VICR TYP mA 7 TLC272, TLC272A, TLC272B, TLC272Y, TLC277 LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS SLOS091E – OCTOBER 1987 – REVISED FEBRUARY 2002 electrical characteristics at specified free-air temperature, VDD = 10 V (unless otherwise noted) PARAMETER TEST CONDITIONS TA† TLC272I, TLC272AI, TLC272BI, TLC277I MIN VIO TLC272I VO = 1.4 V, RS = 50 Ω, VIC = 0, RL = 10 kΩ TLC272AI VO = 1.4 V, RS = 50 Ω, VIC = 0, RL = 10 kΩ Input offset voltage TLC272BI TLC277I αVIO Temperature coefficient of input offset voltage IIO Input offset current (see Note 4) VO = 1.4 V, RS = 50 Ω, VIC = 0, RL = 10 kΩ VO = 1.4 V, RS = 50 Ω, VIC = 0, RL = 10 kΩ VICR VOH VOL AVD CMRR kSVR VIC = 5 V Input bias current (see Note 4) VID = 100 mV, Low-level Low level out output ut voltage VID = –100 100 mV, Large-signal amplification Large signal differential voltage am lification Common-mode Common mode rejection ratio VO = 1 V to 6 V, RL = 10 kΩ IOL = 0 RL = 10 kΩ VIC = VICRmin S l lt j ti ratio ti Supply-voltage rejection (∆VDD /∆VIO) VDD = 5 V to 10 V, Supply y current ((two amplifiers)) VO = 5 V, V No load VO = 1.4 V 1.1 10 0.9 5 290 2000 Full range Full range 3500 250 25°C Full range 800 µV/°C 2 25°C 0.1 60 85°C 26 1000 25°C 0.7 60 85°C 220 2000 25°C – 0.2 to 9 Full range – 0.2 to 8.5 – 0.3 to 9.2 25°C 8 8.5 – 40°C 7.8 8.5 85°C 7.8 8.5 V 25°C 0 50 – 40°C 0 50 85°C 0 50 25°C 10 36 – 40°C 7 46 85°C 7 31 25°C 65 85 – 40°C 60 87 85°C 60 88 25°C 65 95 – 40°C 60 92 85°C 60 96 mV V/mV dB dB 4 5 1.5 85°C † Full range is – 40°C to 85°C. NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically. 5. This range also applies to each input individually. 3.2 • DALLAS, TEXAS 75265 pA V 2.8 POST OFFICE BOX 655303 pA V 1.4 8 µV V 2900 25°C VIC = 5 V, V mV 7 25°C – 40°C IDD UNIT 13 25°C Common mode in Common-mode input ut voltage range (see Note 5) High-level High level out output ut voltage MAX Full range 25°C to 85°C V VO = 5 V, IIB 25°C TYP mA TLC272, TLC272A, TLC272B, TLC272Y, TLC277 LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS SLOS091E – OCTOBER 1987 – REVISED FEBRUARY 2002 electrical characteristics at specified free-air temperature, VDD = 5 V (unless otherwise noted) PARAMETER VIO TEST CONDITIONS VO = 1.4 V, RS = 50 Ω, VIC = 0, RL = 10 kΩ Full range TLC277M VO = 1.4 V, RS = 50 Ω, VIC = 0, RL = 10 kΩ Full range Input offset voltage Temperature coefficient of input offset voltage IIO Input offset current (see Note 4) VO = 2.5 25V VIC = 2.5 25V Input bias current (see Note 4) VOL AVD CMRR kSVR Low-level Low level out output ut voltage VID = – 100 mV, Large-signal Large signal differential voltage am amplification lification Common-mode Common mode rejection ratio Supply-voltage S l lt rejection j ti ratio ti (∆VDD /∆VIO) VO = 0.25 V to 2 V RL = 10 kΩ IOL = 0 RL = 10 kΩ VIC = VICRmin VDD = 5 V to 10 V, VO = 1.4 V 1.1 10 200 500 3750 2.1 0.1 60 pA 1.4 15 nA 25°C 0.6 60 pA 9 35 nA 0 to 4 – 0.3 to 4.2 V 0 to 3.5 V 25°C 3.2 3.8 – 55°C 3 3.8 125°C 3 3.8 V 25°C 0 50 – 55°C 0 50 125°C 0 50 25°C 5 23 – 55°C 3.5 35 125°C 3.5 16 25°C 65 80 – 55°C 60 81 125°C 60 84 25°C 65 95 – 55°C 60 90 125°C 60 dB dB 97 3.2 2 5 1 125°C † Full range is – 55°C to 125°C. NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically. 5. This range also applies to each input individually. 2.2 POST OFFICE BOX 655303 VIC = 2.5 2 5 V, V • DALLAS, TEXAS 75265 mV V/mV – 55°C VO = 2.5 2 5 V, V No load µV V 25°C 1.4 Supply y current ((two amplifiers)) mV µV/°C 25°C IDD UNIT 125°C Common mode in Common-mode input ut voltage range (see Note 5) VID = 100 mV, MAX 12 125°C High-level High level out output ut voltage TYP 25°C to 125°C Full range VOH MIN 25°C 25°C VICR TLC272M, TLC277M 25°C TLC272M αVIO IIB TA† mA 9 TLC272, TLC272A, TLC272B, TLC272Y, TLC277 LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS SLOS091E – OCTOBER 1987 – REVISED FEBRUARY 2002 electrical characteristics at specified free-air temperature, VDD = 10 V (unless otherwise noted) PARAMETER VIO TEST CONDITIONS TLC272M VO = 1.4 V, RS = 50 Ω, VIC = 0, RL = 10 kΩ Full range TLC277M VO = 1.4 V, RS = 50 Ω, VIC = 0, RL = 10 kΩ Full range Input offset voltage αVIO Temperature coefficient of input offset voltage IIO Input offset current (see Note 4) VO = 5 V, V IIB VICR VOH VOL AVD CMRR kSVR TA† VIC = 5 V Input bias current (see Note 4) Low-level Low level out output ut voltage Large-signal L i l differential diff ti l voltage lt amplification Common-mode Common mode rejection ratio VID = – 100 mV, VO = 1 V to 6 V, RL = 10 kΩ IOL = 0 RL = 10 kΩ VIC = VICRmin S l lt j ti ratio ti Supply-voltage rejection (∆VDD /∆VIO) VDD = 5 V to 10 V, Supply y current ((two amplifiers)) VO = 5 V, V No load VO = 1.4 V VIC = 5 V, V MAX 1.1 10 250 25°C to 125°C 2.2 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 UNIT mV µV V µV/°C 25°C 0.1 60 pA 125°C 1.8 15 nA 25°C 0.7 60 pA 10 35 nA 25°C 0 to 9 Full range 0 to 8.5 – 0.3 to 9.2 V V 25°C 8 8.5 – 55°C 7.8 8.5 125°C 7.8 8.4 V 25°C 0 50 – 55°C 0 50 125°C 0 50 25°C 10 36 – 55°C 7 50 125°C 7 27 25°C 65 85 – 55°C 60 87 125°C 60 86 25°C 65 95 – 55°C 60 90 125°C 60 97 1.9 mV V/mV dB dB 4 – 55°C 3 6 125°C 1.3 2.8 † Full range is – 55°C to 125°C. NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically. 5. This range also applies to each input individually. 10 800 4300 125°C VID = 100 mV, TYP 12 25°C 25°C IDD MIN 25°C Common mode in Common-mode input ut voltage range (see Note 5) High-level High level out output ut voltage TLC272M, TLC277M mA TLC272, TLC272A, TLC272B, TLC272Y, TLC277 LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS SLOS091E – OCTOBER 1987 – REVISED FEBRUARY 2002 electrical characteristics, VDD = 5 V, TA = 25°C (unless otherwise noted) PARAMETER VIO Input offset voltage αVIO TEST CONDITIONS VO = 1.4 V, RS = 50 Ω, TLC272Y MIN VIC = 0, RL = 10 kΩ TYP MAX 11 1.1 10 UNIT mV Temperature coefficient of input offset voltage 1.8 µV/°C IIO IIB Input offset current (see Note 4) 0.1 pA 0.6 pA VICR Common-mode input voltage range (see Note 5) – 0.2 to 4 – 0.3 to 4.2 V VOH VOL High-level output voltage 3.2 3.8 AVD CMRR Large-signal differential voltage amplification kSVR Supply-voltage rejection ratio (∆VDD /∆VIO) IDD Supply current (two amplifiers) 2 5 V, V VO = 2.5 Input bias current (see Note 4) VID = 100 mV, VID = –100 mV, Low-level output voltage Common-mode rejection ratio VO = 0.25 V to 2 V VIC = VICRmin VDD = 5 V to 10 V, VO = 2.5 V, No load 25V VIC = 2.5 RL = 10 kΩ IOL = 0 RL = 10 kΩ VO = 1.4 V VIC = 2.5 V, 0 V 50 mV 5 23 V/mV 65 80 dB 65 95 dB 1.4 3.2 mA NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically. 5. This range also applies to each input individually. electrical characteristics, VDD = 10 V, TA = 25°C (unless otherwise noted) PARAMETER TEST CONDITIONS VO = 1.4 V, RS = 50 Ω, TLC272Y MIN VIC = 0, RL = 10 kΩ TYP MAX 11 1.1 10 UNIT VIO Input offset voltage αVIO Temperature coefficient of input offset voltage 1.8 µV/°C IIO IIB Input offset current (see Note 4) 0.1 pA VO = 5 V, V Input bias current (see Note 4) VICR Common-mode input voltage range (see Note 5) VOH VOL High-level output voltage AVD CMRR Large-signal differential voltage amplification kSVR Supply-voltage rejection ratio (∆VDD /∆VIO) IDD Supply current (two amplifiers) VID = 100 mV, VID = –100 mV, Low-level output voltage Common-mode rejection ratio VO = 1 V to 6 V, VIC = VICRmin VDD = 5 V to 10 V, VO = 5 V, No load VIC = 5 V RL = 10 kΩ IOL = 0 RL = 10 kΩ VO = 1.4 V VIC = 5 V, mV 0.7 pA – 0.2 to 9 – 0.3 to 9.2 V 8 8.5 0 V 50 mV 10 36 V/mV 65 85 dB 65 95 dB 1.9 4 mA NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically. 5. This range also applies to each input individually. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 11 TLC272, TLC272A, TLC272B, TLC272Y, TLC277 LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS SLOS091E – OCTOBER 1987 – REVISED FEBRUARY 2002 operating characteristics at specified free-air temperature, VDD = 5 V PARAMETER TEST CONDITIONS TA TLC272C, TLC272AC, TLC272BC, TLC277C MIN VIPP = 1 V SR Slew rate at unity gain RL = 10 kΩ, pF, CL = 20 pF See Figure 1 VIPP = 2.5 V Vn Equivalent input noise voltage f = 1 kHz, See Figure 2 RS = 20 Ω, BOM Maximum out output-swing ut swing bandwidth VO = VOH, RL = 10 kΩ, kΩ CL = 20 pF, F See Figure 1 B1 φm Unity-gain Unity gain bandwidth Phase margin g VI = 10 mV, V See Figure 3 VI = 10 mV, V CL = 20 pF pF, CL = 20 pF, F f = B1, See Figure 3 TYP 25°C 3.6 0°C 4 70°C 3 25°C 2.9 0°C 3.1 70°C 2.5 25°C 25 25°C 320 0°C 340 70°C 260 25°C 1.7 0°C 2 70°C 1.3 25°C 46° 0°C 47° 70°C 43° UNIT MAX V/ s V/µs nV/√Hz kHz MHz operating characteristics at specified free-air temperature, VDD = 10 V PARAMETER TEST CONDITIONS TA TLC272C, TLC272AC, TLC272BC, TLC277C MIN VIPP = 1 V SR Slew rate at unity gain RL = 10 kΩ, pF, CL = 20 pF See Figure 1 VIPP = 5.5 V Vn Equivalent input noise voltage f = 1 kHz, See Figure 2 RS = 20 Ω, BOM Maximum out output-swing ut swing bandwidth VO = VOH, RL = 10 kΩ, kΩ F CL = 20 pF, See Figure 1 VI = 10 mV, V See Figure 3 CL = 20 pF, F B1 φm 12 Unity-gain Unity gain bandwidth Phase margin g VI = 10 mV, V CL = 20 pF pF, POST OFFICE BOX 655303 f = B1, See Figure 3 • DALLAS, TEXAS 75265 TYP 25°C 5.3 0°C 5.9 70°C 4.3 25°C 4.6 0°C 5.1 70°C 3.8 25°C 25 25°C 200 0°C 220 70°C 140 25°C 2.2 0°C 2.5 70°C 1.8 25°C 49° 0°C 50° 70°C 46° UNIT MAX V/ s V/µs nV/√Hz kHz MHz TLC272, TLC272A, TLC272B, TLC272Y, TLC277 LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS SLOS091E – OCTOBER 1987 – REVISED FEBRUARY 2002 operating characteristics at specified free-air temperature, VDD = 5 V PARAMETER TEST CONDITIONS TA TLC272I, TLC272AI, TLC272BI, TLC277I MIN VIPP = 1 V SR Slew rate at unity gain RL = 10 kΩ, pF, CL = 20 pF See Figure 1 VIPP = 2.5 V Vn Equivalent input noise voltage f = 1 kHz, See Figure 2 RS = 20 Ω, BOM Maximum out output-swing ut swing bandwidth VO = VOH, RL = 10 kΩ, kΩ CL = 20 pF, F See Figure 1 VI = 10 mV, V See Figure 3 CL = 20 pF, F B1 φm Unity-gain Unity gain bandwidth Phase margin g VI = 10 mV, V CL = 20 pF pF, f = B1, See Figure 3 TYP 25°C 3.6 – 40°C 4.5 85°C 2.8 25°C 2.9 – 40°C 3.5 85°C 2.3 25°C 25 25°C 320 – 40°C 380 85°C 250 25°C 1.7 – 40°C 2.6 85°C 1.2 25°C 46° – 40°C 49° 85°C 43° UNIT MAX V/ s V/µs nV/√Hz kHz MHz operating characteristics at specified free-air temperature, VDD = 10 V PARAMETER TEST CONDITIONS TA TLC272I, TLC272AI, TLC272BI, TLC277I MIN VIPP = 1 V SR Slew rate at unity gain RL = 10 kΩ, pF, CL = 20 pF See Figure 1 VIPP = 5.5 V Vn BOM B1 φm Equivalent input noise voltage f = 1 kHz, See Figure 2 RS = 20 Ω, Maximum out output-swing ut swing bandwidth VO = VOH, RL = 10 kΩ, kΩ F CL = 20 pF, See Figure 1 VI = 10 mV, V See Figure 3 CL = 20 pF, F Unity-gain Unity gain bandwidth Phase margin g VI = 10 mV, V CL = 20 pF pF, POST OFFICE BOX 655303 f = B1, See Figure 3 • DALLAS, TEXAS 75265 TYP 25°C 5.3 – 40°C 6.8 85°C 4 25°C 4.6 – 40°C 5.8 85°C 3.5 25°C 25 25°C 200 – 40°C 260 85°C 130 25°C 2.2 – 40°C 3.1 85°C 1.7 25°C 49° – 40°C 52° 85°C 46° UNIT MAX V/ s V/µs nV/√Hz kHz MHz 13 TLC272, TLC272A, TLC272B, TLC272Y, TLC277 LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS SLOS091E – OCTOBER 1987 – REVISED FEBRUARY 2002 operating characteristics at specified free-air temperature, VDD = 5 V PARAMETER TEST CONDITIONS VIPP = 1 V SR Slew rate at unity gain RL = 10 kΩ, pF, CL = 20 pF See Figure 1 VIPP = 2.5 V Vn BOM B1 φm Equivalent input noise voltage f = 1 kHz, See Figure 2 RS = 20 Ω, Maximum out output-swing ut swing bandwidth VO = VOH, RL = 10 kΩ, kΩ F CL = 20 pF, See Figure 1 VI = 10 mV, V See Figure 3 CL = 20 pF, F Unity-gain Unity gain bandwidth Phase margin g VI = 10 mV, V CL = 20 pF pF, f = B1, See Figure 3 TA TLC272M, TLC277M MIN TYP 25°C 3.6 – 55°C 4.7 125°C 2.3 25°C 2.9 – 55°C 3.7 125°C 2 25°C 25 25°C 320 – 55°C 400 125°C 230 25°C 1.7 – 55°C 2.9 125°C 1.1 25°C 46° – 55°C 49° 125°C 41° MAX UNIT V/ s V/µs nV/√Hz kHz MHz operating characteristics at specified free-air temperature, VDD = 10 V PARAMETER TEST CONDITIONS VIPP = 1 V SR Slew rate at unity gain RL = 10 kΩ, pF, CL = 20 pF See Figure 1 VIPP = 5.5 V Vn Equivalent input noise voltage f = 1 kHz, See Figure 2 RS = 20 Ω, BOM Maximum out output-swing ut swing bandwidth VO = VOH, RL = 10 kΩ, kΩ F CL = 20 pF, See Figure 1 B1 φm 14 Unity-gain Unity gain bandwidth Phase margin g VI = 10 mV, V See Figure 3 VI = 10 mV, V CL = 20 pF pF, POST OFFICE BOX 655303 CL = 20 pF, F f = B1, See Figure 3 • DALLAS, TEXAS 75265 TA TLC272M, TLC277M MIN TYP 25°C 5.3 – 55°C 7.1 125°C 3.1 25°C 4.6 – 55°C 6.1 125°C 2.7 25°C 25 25°C 200 – 55°C 280 125°C 110 25°C 2.2 – 55°C 3.4 125°C 1.6 25°C 49° – 55°C 52° 125°C 44° MAX UNIT V/ s V/µs nV/√Hz kHz MHz TLC272, TLC272A, TLC272B, TLC272Y, TLC277 LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS SLOS091E – OCTOBER 1987 – REVISED FEBRUARY 2002 operating characteristics, VDD = 5 V, TA = 25°C PARAMETER TEST CONDITIONS MAX UNIT 3.6 RS = 20 Ω, See Figure 2 25 nV/√Hz VO = VOH, See Figure 1 CL = 20 pF, RL = 10 kΩ, 320 kHz VI = 10 mV, VI = 10 mV, See Figure 3 CL = 20 pF, See Figure 3 1.7 MHz f = B1, CL = 20 pF, 46° Slew rate at unity gain RL = 10 kΩ, See Figure 1 CL = 20 pF, F, Vn Equivalent input noise voltage f = 1 kHz, BOM Maximum output-swing bandwidth B1 Unity-gain bandwidth Phase margin TYP VIPP = 1 V VIPP = 2.5 V SR φm TLC272Y MIN V/ s V/µs 2.9 operating characteristics, VDD = 10 V, TA = 25°C PARAMETER TEST CONDITIONS UNIT RS = 20 Ω, See Figure 2 25 nV/√Hz CL = 20 pF, RL = 10 kΩ, 200 kHz CL = 20 pF, See Figure 3 2.2 MHz f = B1, CL = 20 pF, 49° RL = 10 kΩ, See Figure 1 CL = 20 pF, F, Vn Equivalent input noise voltage f = 1 kHz, BOM Maximum output-swing bandwidth VO = VOH, See Figure 1 B1 Unity-gain bandwidth VI = 10 mV, VI = 10 mV, See Figure 3 POST OFFICE BOX 655303 MAX 5.3 Slew rate at unity gain Phase margin TYP VIPP = 1 V VIPP = 5.5 V SR φm TLC272Y MIN • DALLAS, TEXAS 75265 4.6 V/ s V/µs 15 TLC272, TLC272A, TLC272B, TLC272Y, TLC277 LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS SLOS091E – OCTOBER 1987 – REVISED FEBRUARY 2002 PARAMETER MEASUREMENT INFORMATION single-supply versus split-supply test circuits Because the TLC272 and TLC277 are optimized for single-supply operation, circuit configurations used for the various tests often present some inconvenience since the input signal, in many cases, must be offset from ground. This inconvenience can be avoided by testing the device with split supplies and the output load tied to the negative rail. A comparison of single-supply versus split-supply test circuits is shown below. The use of either circuit gives the same result. VDD VDD + – – VO VO + CL + VI VI RL CL RL VDD – (a) SINGLE SUPPLY (b) SPLIT SUPPLY Figure 1. Unity-Gain Amplifier 2 kΩ VDD VDD + – – 20 Ω 2 kΩ 1/2 VDD VO VO + + 20 Ω 20 Ω 20 Ω VDD – (a) SINGLE SUPPLY (b) SPLIT SUPPLY Figure 2. Noise-Test Circuit 10 kΩ VDD VDD + 100 Ω – 100 Ω – VI 10 kΩ VI VO + + 1/2 VDD VO CL CL VDD – (a) SINGLE SUPPLY (b) SPLIT SUPPLY Figure 3. Gain-of-100 Inverting Amplifier 16 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 TLC272, TLC272A, TLC272B, TLC272Y, TLC277 LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS SLOS091E – OCTOBER 1987 – REVISED FEBRUARY 2002 PARAMETER MEASUREMENT INFORMATION input bias current Because of the high input impedance of the TLC272 and TLC277 operational amplifiers, attempts to measure the input bias current can result in erroneous readings. The bias current at normal room ambient temperature is typically less than 1 pA, a value that is easily exceeded by leakages on the test socket. Two suggestions are offered to avoid erroneous measurements: 1. Isolate the device from other potential leakage sources. Use a grounded shield around and between the device inputs (see Figure 4). Leakages that would otherwise flow to the inputs are shunted away. 2. Compensate for the leakage of the test socket by actually performing an input bias current test (using a picoammeter) with no device in the test socket. The actual input bias current can then be calculated by subtracting the open-socket leakage readings from the readings obtained with a device in the test socket. One word of caution: many automatic testers as well as some bench-top operational amplifier testers use the servo-loop technique with a resistor in series with the device input to measure the input bias current (the voltage drop across the series resistor is measured and the bias current is calculated). This method requires that a device be inserted into the test socket to obtain a correct reading; therefore, an open-socket reading is not feasible using this method. 8 5 V = VIC 1 4 Figure 4. Isolation Metal Around Device Inputs (JG and P packages) low-level output voltage To obtain low-supply-voltage operation, some compromise was necessary in the input stage. This compromise results in the device low-level output being dependent on the common-mode input voltage level as well as the differential input voltage level. When attempting to correlate low-level output readings with those quoted in the electrical specifications, these two conditions should be observed. If conditions other than these are to be used, please refer to Figures 14 through 19 in the Typical Characteristics of this data sheet. input offset voltage temperature coefficient Erroneous readings often result from attempts to measure temperature coefficient of input offset voltage. This parameter is actually a calculation using input offset voltage measurements obtained at two different temperatures. When one (or both) of the temperatures is below freezing, moisture can collect on both the device and the test socket. This moisture results in leakage and contact resistance, which can cause erroneous input offset voltage readings. The isolation techniques previously mentioned have no effect on the leakage since the moisture also covers the isolation metal itself, thereby rendering it useless. It is suggested that these measurements be performed at temperatures above freezing to minimize error. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 17 TLC272, TLC272A, TLC272B, TLC272Y, TLC277 LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS SLOS091E – OCTOBER 1987 – REVISED FEBRUARY 2002 PARAMETER MEASUREMENT INFORMATION full-power response Full-power response, the frequency above which the operational amplifier slew rate limits the output voltage swing, is often specified two ways: full-linear response and full-peak response. The full-linear response is generally measured by monitoring the distortion level of the output while increasing the frequency of a sinusoidal input signal until the maximum frequency is found above which the output contains significant distortion. The full-peak response is defined as the maximum output frequency, without regard to distortion, above which full peak-to-peak output swing cannot be maintained. Because there is no industry-wide accepted value for significant distortion, the full-peak response is specified in this data sheet and is measured using the circuit of Figure 1. The initial setup involves the use of a sinusoidal input to determine the maximum peak-to-peak output of the device (the amplitude of the sinusoidal wave is increased until clipping occurs). The sinusoidal wave is then replaced with a square wave of the same amplitude. The frequency is then increased until the maximum peak-to-peak output can no longer be maintained (Figure 5). A square wave is used to allow a more accurate determination of the point at which the maximum peak-to-peak output is reached. (a) f = 1 kHz (b) BOM > f > 1 kHz (c) f = BOM (d) f > BOM Figure 5. Full-Power-Response Output Signal test time Inadequate test time is a frequent problem, especially when testing CMOS devices in a high-volume, short-test-time environment. Internal capacitances are inherently higher in CMOS than in bipolar and BiFET devices and require longer test times than their bipolar and BiFET counterparts. The problem becomes more pronounced with reduced supply levels and lower temperatures. 18 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 TLC272, TLC272A, TLC272B, TLC272Y, TLC277 LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS SLOS091E – OCTOBER 1987 – REVISED FEBRUARY 2002 TYPICAL CHARACTERISTICS Table of Graphs FIGURE VIO αVIO Input offset voltage Distribution 6, 7 Temperature coefficient of input offset voltage Distribution 8, 9 VOH High-level High level out output ut voltage vs High-level out output ut current vs Su Supply ly voltage vs Free-air temperature 10, 11 12 13 VOL Low level output voltage Low-level input vs Common-mode in ut voltage vs Differential input in ut voltage vs Free Free-air air tem temperature erature vs Low-level output current 14, 15 16 17 18, 19 AVD Large-signal amplification Large signal differential voltage am lification vs Su Supply ly voltage Free-air temperature vs Free air tem erature vs Frequency 20 21 32, 33 IIB IIO Input bias current vs Free-air temperature 22 Input offset current vs Free-air temperature 22 VIC Common-mode input voltage vs Supply voltage 23 IDD Supply current Supply vs Su ly voltage vs Free-air temperature 24 25 SR Slew rate vs Su Supply ly voltage vs Free-air temperature 26 27 Normalized slew rate vs Free-air temperature 28 Maximum peak-to-peak output voltage vs Frequency 29 B1 Unity gain bandwidth Unity-gain vs Free Free-air air tem temperature erature vs Supply voltage 30 31 φm Phase margin vs Su Supply ly voltage Free-air temperature vs Free air tem erature vs Load capacitance 34 35 36 Vn Equivalent input noise voltage vs Frequency 37 Phase shift vs Frequency 32, 33 VO(PP) POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 19 TLC272, TLC272A, TLC272B, TLC272Y, TLC277 LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS SLOS091E – OCTOBER 1987 – REVISED FEBRUARY 2002 TYPICAL CHARACTERISTICS DISTRIBUTION OF TLC272 INPUT OFFSET VOLTAGE DISTRIBUTION OF TLC272 INPUT OFFSET VOLTAGE Percentage of Units – % 50 40 ÌÌÌÌ ÌÌÌÌÌÌÌÌÌÌÌÌ ÌÌÌÌÌÌÌÌÌÌÌÌ ÌÌÌÌ ÌÌÌÌÌ ÌÌÌÌÌ ÌÌÌÌÌ 60 753 Amplifiers Tested From 6 Wafer Lots VDD = 5 V TA = 25°C P Package 50 Percentage of Units – % 60 30 20 40 ÌÌÌÌÌÌÌÌÌÌÌ ÌÌÌÌÌÌÌÌÌÌÌ ÌÌÌÌ ÌÌÌÌ ÌÌÌÌ 753 Amplifiers Tested From 6 Wafer Lots VDD = 10 V TA = 25°C P Package 30 20 10 10 0 –5 0 –4 –3 –2 –1 0 1 2 3 VIO – Input Offset Voltage – mV 4 –5 5 –4 DISTRIBUTION OF TLC272 AND TLC277 INPUT OFFSET VOLTAGE TEMPERATURE COEFFICIENT 40 DISTRIBUTION OF TLC272 AND TLC277 INPUT OFFSET VOLTAGE TEMPERATURE COEFFICIENT ÌÌÌÌÌÌÌÌÌÌÌÌ ÌÌÌÌÌÌÌÌÌÌÌÌ ÌÌÌÌÌÌÌÌÌÌÌÌ ÌÌÌÌÌÌÌÌÌÌÌÌ ÌÌÌÌÌÌÌÌÌÌÌÌ ÌÌÌÌÌÌÌÌÌÌÌÌ ÌÌÌÌÌÌÌÌÌÌÌÌ ÌÌÌÌÌÌÌÌÌÌÌÌ 60 324 Amplifiers Tested From 8 Wafer Lots VDD = 5 V TA = 25°C to 125°C P Package Outliers: (1) 20.5 µV/°C 50 Percentage of Units – % Percentage of Units – % 50 30 20 40 324 Amplifiers Tested From 8 Wafer Lots VDD = 5 V TA = 25°C to 125°C P Package Outliers: (1) 21.2 µV/°C 30 20 10 10 0 0 2 4 6 8 – 10 – 8 – 6 – 4 – 2 αVIO – Temperature Coefficient – µV/°C 10 0 2 4 6 8 – 10 – 8 – 6 – 4 – 2 0 αVIO – Temperature Coefficient – µV/°C Figure 9 Figure 8 20 5 4 Figure 7 Figure 6 60 –3 –2 –1 0 1 2 3 VIO – Input Offset Voltage – mV POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 Á 10 TLC272, TLC272A, TLC272B, TLC272Y, TLC277 LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS SLOS091E – OCTOBER 1987 – REVISED FEBRUARY 2002 TYPICAL CHARACTERISTICS† HIGH-LEVEL OUTPUT VOLTAGE vs HIGH-LEVEL OUTPUT CURRENT HIGH-LEVEL OUTPUT VOLTAGE vs HIGH-LEVEL OUTPUT CURRENT 16 VID = 100 mV TA = 25°C See Note A 4 VOH VOH – High-Level Output Voltage – V VOH VOH – High-Level Output Voltage – V 5 VDD = 5 V 3 VDD = 4 V VDD = 3 V 2 ÁÁ ÁÁ ÁÁ ÁÁ ÁÁ ÁÁ 1 0 –2 –4 –6 –8 IOH – High-Level Output Current – mA 0 – 10 14 VDD = 16 V VID = 100 mV TA = 25°C 12 10 8 VDD = 10 V 6 4 2 0 0 – 5 – 10 – 15 – 20 – 25 – 30 – 35 – 40 IOH – High-Level Output Current – mA NOTE A: The 3-V curve only applies to the C version. Figure 10 Figure 11 HIGH-LEVEL OUTPUT VOLTAGE vs SUPPLY VOLTAGE 14 12 ÌÌÌÌÌ ÌÌÌÌ ÌÌÌÌ ÌÌÌÌÌ VDD – 1.6 VID = 100 mV RL = 10 kΩ TA = 25°C VOH VOH – High-Level Output Voltage – V VOH VOH – High-Level Output Voltage – V 16 HIGH-LEVEL OUTPUT VOLTAGE vs FREE-AIR TEMPERATURE 10 ÁÁ ÁÁ ÁÁ 8 6 IOH = – 5 mA VID = 100 mA VDD – 1.7 VDD = 5 V VDD –1.8 VDD – 1.9 VDD – 2 VDD = 10 V VDD –2.1 ÁÁ ÁÁ ÁÁ 4 2 0 0 2 4 6 8 10 12 VDD – Supply Voltage – V 14 16 VDD – 2.2 VDD –2.3 VDD –2.4 – 75 – 50 Figure 12 – 25 0 20 50 75 100 TA – Free-Air Temperature – °C 125 Figure 13 † Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 21 TLC272, TLC272A, TLC272B, TLC272Y, TLC277 LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS SLOS091E – OCTOBER 1987 – REVISED FEBRUARY 2002 TYPICAL CHARACTERISTICS† LOW-LEVEL OUTPUT VOLTAGE vs COMMON-MODE INPUT VOLTAGE LOW-LEVEL OUTPUT VOLTAGE vs COMMON-MODE INPUT VOLTAGE 500 VDD = 5 V IOL = 5 mA 650 TA = 25°C 600 550 VID = – 100 mV 500 450 ÁÁ ÁÁ ÁÁ VID = – 1 V 350 300 0.5 1 1.5 2 2.5 3 3.5 VIC – Common-Mode Input Voltage – V TA = 25°C 450 400 VID = – 100 mV VID = – 1 V 350 VID = – 2.5 V ÁÁ ÁÁ 400 0 VDD = 10 V IOL = 5 mA VOL VOL – Low-Level Output Voltage – mV VOL VOL – Low-Level Output Voltage – mV 700 4 300 250 0 1 2 4 6 8 3 5 7 9 VIC – Common-Mode Input Voltage – V Figure 14 Figure 15 LOW-LEVEL OUTPUT VOLTAGE vs DIFFERENTIAL INPUT VOLTAGE LOW-LEVEL OUTPUT VOLTAGE vs FREE-AIR TEMPERATURE 900 IOL = 5 mA VIC = |VID/2| TA = 25°C 700 VOL – Low-Level Output Voltage – mV VOL VOL VOL – Low-Level Output Voltage – mV 800 600 500 VDD = 5 V 400 300 ÁÁ ÁÁ ÁÁ VDD = 10 V 200 100 0 800 700 IOL = 5 mA VID = – 1 V VIC = 0.5 V VDD = 5 V 600 500 400 ÁÁ ÁÁ ÁÁ VDD = 10 V 300 200 100 0 –1 – 2 – 3 – 4 – 5 – 6 – 7 – 8 – 9 – 10 VID – Differential Input Voltage – V 0 – 75 – 50 Figure 16 – 25 0 25 50 75 100 TA – Free-Air Temperature – °C Figure 17 † Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices. 22 10 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 125 TLC272, TLC272A, TLC272B, TLC272Y, TLC277 LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS SLOS091E – OCTOBER 1987 – REVISED FEBRUARY 2002 TYPICAL CHARACTERISTICS† LOW-LEVEL OUTPUT VOLTAGE vs LOW-LEVEL OUTPUT CURRENT VOL VOL – Low-Level Output Voltage – V 0.9 0.8 0.7 ÌÌÌÌ ÌÌÌÌ ÌÌÌÌ 3.0 VID = – 1 V VIC = 0.5 V TA = 25°C See Note A VOL – Low-Level Output Voltage – V VOL 1.0 LOW-LEVEL OUTPUT VOLTAGE vs LOW-LEVEL OUTPUT CURRENT VDD = 5 V VDD = 4 V 0.6 VDD = 3 V 0.5 0.4 ÁÁ ÁÁ ÁÁ ÁÁ ÁÁ 0.3 0.2 0.1 0 0 1 2 3 4 5 6 7 IOL – Low-Level Output Current – mA 2.5 2.0 ÌÌÌÌÌ ÌÌÌÌ ÌÌÌÌÌ ÌÌÌÌ ÌÌÌÌ VID = – 1 V VIC = 0.5 V TA = 25°C VDD = 16 V VDD = 10 V 1.5 1.0 0.5 8 0 0 5 10 15 20 25 IOL – Low-Level Output Current – mA 30 NOTE A: The 3-V curve only applies to the C version. Figure 19 Figure 18 LARGE-SIGNAL DIFFERENTIAL VOLTAGE AMPLIFICATION vs SUPPLY VOLTAGE 60 ÌÌÌÌ 50 TA = 0°C 40 ÌÌÌÌ ÌÌÌÌ ÁÁ ÌÌÌÌÌÁÁ ÁÁ 30 TA = 25°C TA = 85°C 20 TA = 125°C 10 0 0 2 4 6 8 10 12 VDD – Supply Voltage – V 14 16 RL = 10 kΩ 45 AVD AVD – Large-Signal Differential Voltage Amplification – V/mV AVD AVD – Large-Signal Differential Voltage Amplification – V/mV 50 TA = – 55°C RL = 10 kΩ ÁÁ ÁÁ ÁÁ LARGE-SIGNAL DIFFERENTIAL VOLTAGE AMPLIFICATION vs FREE-AIR TEMPERATURE 40 VDD = 10 V 35 30 25 20 VDD = 5 V 15 10 5 0 – 75 – 50 Figure 20 – 25 0 25 50 75 100 TA – Free-Air Temperature – °C 125 Figure 21 † Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 23 TLC272, TLC272A, TLC272B, TLC272Y, TLC277 LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS SLOS091E – OCTOBER 1987 – REVISED FEBRUARY 2002 TYPICAL CHARACTERISTICS† COMMON-MODE INPUT VOLTAGE POSITIVE LIMIT vs SUPPLY VOLTAGE 10000 16 VDD = 10 V VIC = 5 V See Note A ÌÌ 1000 VIC – Common-Mode Input Voltage – V I IB and I IO – Input Bias and Offset Currents – pA INPUT BIAS CURRENT AND INPUT OFFSET CURRENT vs FREE-AIR TEMPERATURE IIB 100 ÌÌ ÌÌ IIO 10 1 0.1 25 TA = 25°C 14 12 10 8 6 4 2 0 35 45 55 65 75 85 95 105 115 125 TA – Free-Air Temperature – °C NOTE A: The typical values of input bias current and input offset current below 5 pA were determined mathematically. 0 2 4 6 8 10 12 VDD – Supply Voltage – V 14 16 – 25 0 25 50 75 100 TA – Free-Air Temperature – °C 125 Figure 23 Figure 22 SUPPLY CURRENT vs SUPPLY VOLTAGE SUPPLY CURRENT vs FREE-AIR TEMPERATURE 5 4 VO = VDD/2 No Load 3.5 VO = VDD/2 No Load TA = – 55°C 4 3.5 ÌÌÌÌ ÌÌÌÌ 3 TA = 25°C 2.5 2 1.5 ÌÌÌ TA = 0°C ÌÌÌÌ ÌÌÌÌ ÌÌÌÌ 1 TA = 70°C 0.5 I DD – Supply Current – mA I DD – Supply Current – mA 4.5 3 2.5 VDD = 10 V 2 1.5 VDD = 5 V 1 0.5 TA = 125°C 0 0 2 4 6 8 10 12 VDD – Supply Voltage – V 14 16 0 – 75 – 50 Figure 24 Figure 25 † Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices. 24 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 TLC272, TLC272A, TLC272B, TLC272Y, TLC277 LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS SLOS091E – OCTOBER 1987 – REVISED FEBRUARY 2002 TYPICAL CHARACTERISTICS† SLEW RATE vs FREE-AIR TEMPERATURE SLEW RATE vs SUPPLY VOLTAGE 8 8 AV = 1 VIPP = 1 V RL = 10 kΩ CL = 20 pF TA = 25°C See Figure 1 6 7 5 4 3 3 1 1 0 4 6 8 10 12 VDD – Supply Voltage – V 14 VDD = 10 V VIPP = 1 V 4 2 2 VDD = 10 V VIPP = 5.5 V 5 2 0 VDD = 5 V VIPP = 1 V VDD = 5 V VIPP = 2.5 V 0 – 75 16 – 50 NORMALIZED SLEW RATE vs FREE-AIR TEMPERATURE VO(PP) – Maximum Peak-to-Peak Output Voltage – V AV = 1 VIPP = 1 V RL = 10 kΩ CL = 20 pF 1.4 VDD = 10 V Normalized Slew Rate 1.2 VDD = 5 V 1.0 0.9 0.8 0.7 0.6 0.5 – 75 – 50 – 25 0 25 125 MAXIMUM PEAK OUTPUT VOLTAGE vs FREQUENCY 1.5 1.1 – 25 0 25 50 75 100 TA – Free-Air Temperature – °C Figure 27 Figure 26 1.3 AV = 1 RL = 10 kΩ CL = 20 pF See Figure 1 6 SR – Slew Rate – V/ µs SR – Slew Rate – V/ µs 7 50 75 100 125 10 VDD = 10 V 9 8 TA = 125°C TA = 25°C TA = – 55°C 7 6 5 VDD = 5 V 4 3 RL = 10 kΩ See Figure 1 2 1 0 10 TA – Free-Air Temperature – °C 100 1000 10000 f – Frequency – kHz Figure 29 Figure 28 † Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 25 TLC272, TLC272A, TLC272B, TLC272Y, TLC277 LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS SLOS091E – OCTOBER 1987 – REVISED FEBRUARY 2002 TYPICAL CHARACTERISTICS† UNITY-GAIN BANDWIDTH vs SUPPLY VOLTAGE UNITY-GAIN BANDWIDTH vs FREE-AIR TEMPERATURE 2.5 VDD = 5 V VI = 10 mV CL = 20 pF See Figure 3 2.5 B1 – Unity-Gain Bandwidth – MHz B1 – Unity-Gain Bandwidth – MHz 3.0 2.0 1.5 1.0 – 75 VI = 10 mV CL = 20 pF TA = 25°C See Figure 3 2.0 1.5 1.0 – 50 – 25 0 25 50 75 100 0 125 2 4 6 8 10 12 14 VDD – Supply Voltage – V TA – Free-Air Temperature – °C Figure 31 Figure 30 LARGE-SIGNAL DIFFERENTIAL VOLTAGE AMPLIFICATION AND PHASE SHIFT vs FREQUENCY 107 Á Á VDD = 5 V RL = 10 kΩ TA = 25°C 10 5 0° 10 4 30° AVD 10 3 60° 10 2 90° Phase Shift 101 120° 1 150° 0.1 10 Phase Shift AVD AVD – Large-Signal Differential Voltage Amplification 10 6 180° 100 1k 10 k 100 k 1M 10 M f – Frequency – Hz Figure 32 † Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices. 26 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 16 TLC272, TLC272A, TLC272B, TLC272Y, TLC277 LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS SLOS091E – OCTOBER 1987 – REVISED FEBRUARY 2002 TYPICAL CHARACTERISTICS† LARGE-SIGNAL DIFFERENTIAL VOLTAGE AMPLIFICATION AND PHASE SHIFT vs FREQUENCY 10 7 VDD = 10 V RL = 10 kΩ TA = 25°C ÁÁ ÁÁ 10 5 0° 10 4 30° Phase Shift AVD AVD – Large-Signal Differential Voltage Amplification 10 6 AVD 10 3 60° 10 2 90° Phase Shift 101 120° 1 150° 0.1 100 10 1k 10 k 100 k 1M 180° 10 M f – Frequency – Hz Figure 33 PHASE MARGIN vs SUPPLY VOLTAGE PHASE MARGIN vs FREE-AIR TEMPERATURE 53° 50° VDD = 5 V VI = 10 mV CL = 20 pF See Figure 3 52° 48° φm m – Phase Margin φm m – Phase Margin 51° 50° 49° 48° VI = 10 mV CL = 20 pF TA = 25°C See Figure 3 47° 46° 2 4 6 8 10 12 14 44° 42° 45° 0 46° 16 40° –75 –50 –25 0 25 50 75 100 125 TA – Free-Air Temperature – °C VDD – Supply Voltage – V Figure 34 Figure 35 † Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 27 TLC272, TLC272A, TLC272B, TLC272Y, TLC277 LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS SLOS091E – OCTOBER 1987 – REVISED FEBRUARY 2002 TYPICAL CHARACTERISTICS PHASE MARGIN vs CAPACITIVE LOAD 50° VDD = 5 V VI = 10 mV TA = 25°C See Figure 3 φm m – Phase Margin 45° 40° 35° 30° 25° VN V n – Equivalent Input Noise Voltage – nV/ Hz EQUIVALENT INPUT NOISE VOLTAGE vs FREQUENCY 400 VDD = 5 V RS = 20 Ω TA = 25°C See Figure 2 300 200 100 0 0 10 20 30 40 50 60 70 80 90 100 1 CL – Capacitive Load – pF 100 f – Frequency – Hz Figure 36 28 10 Figure 37 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 1000 TLC272, TLC272A, TLC272B, TLC272Y, TLC277 LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS SLOS091E – OCTOBER 1987 – REVISED FEBRUARY 2002 APPLICATION INFORMATION single-supply operation While the TLC272 and TLC277 perform well using dual power supplies (also called balanced or split supplies), the design is optimized for single-supply operation. This design includes an input common-mode voltage range that encompasses ground as well as an output voltage range that pulls down to ground. The supply voltage range extends down to 3 V (C-suffix types), thus allowing operation with supply levels commonly available for TTL and HCMOS; however, for maximum dynamic range, 16-V single-supply operation is recommended. Many single-supply applications require that a voltage be applied to one input to establish a reference level that is above ground. A resistive voltage divider is usually sufficient to establish this reference level (see Figure 38). The low input bias current of the TLC272 and TLC277 permits the use of very large resistive values to implement the voltage divider, thus minimizing power consumption. The TLC272 and TLC277 work well in conjunction with digital logic; however, when powering both linear devices and digital logic from the same power supply, the following precautions are recommended: 1. Power the linear devices from separate bypassed supply lines (see Figure 39); otherwise, the linear device supply rails can fluctuate due to voltage drops caused by high switching currents in the digital logic. 2. Use proper bypass techniques to reduce the probability of noise-induced errors. Single capacitive decoupling is often adequate; however, high-frequency applications may require RC decoupling. VDD R4 R1 R2 – VI VO + VREF R3 V REF V C 0.01 µF O + V + (V R3 DD R1 ) R3 REF * V ) R4 ) V REF I R2 Figure 38. Inverting Amplifier With Voltage Reference – OUT Logic Logic Logic Power Supply + (a) COMMON SUPPLY RAILS – Logic Logic Logic + OUT Power Supply (b) SEPARATE BYPASSED SUPPLY RAILS (preferred) Figure 39. Common vs Separate Supply Rails POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 29 TLC272, TLC272A, TLC272B, TLC272Y, TLC277 LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS SLOS091E – OCTOBER 1987 – REVISED FEBRUARY 2002 APPLICATION INFORMATION input characteristics The TLC272 and TLC277 are specified with a minimum and a maximum input voltage that, if exceeded at either input, could cause the device to malfunction. Exceeding this specified range is a common problem, especially in single-supply operation. Note that the lower range limit includes the negative rail, while the upper range limit is specified at VDD – 1 V at TA = 25°C and at VDD – 1.5 V at all other temperatures. The use of the polysilicon-gate process and the careful input circuit design gives the TLC272 and TLC277 very good input offset voltage drift characteristics relative to conventional metal-gate processes. Offset voltage drift in CMOS devices is highly influenced by threshold voltage shifts caused by polarization of the phosphorus dopant implanted in the oxide. Placing the phosphorus dopant in a conductor (such as a polysilicon gate) alleviates the polarization problem, thus reducing threshold voltage shifts by more than an order of magnitude. The offset voltage drift with time has been calculated to be typically 0.1 µV/month, including the first month of operation. Because of the extremely high input impedance and resulting low bias current requirements, the TLC272 and TLC277 are well suited for low-level signal processing; however, leakage currents on printed-circuit boards and sockets can easily exceed bias current requirements and cause a degradation in device performance. It is good practice to include guard rings around inputs (similar to those of Figure 4 in the Parameter Measurement Information section). These guards should be driven from a low-impedance source at the same voltage level as the common-mode input (see Figure 40). Unused amplifiers should be connected as grounded unity-gain followers to avoid possible oscillation. noise performance The noise specifications in operational amplifier circuits are greatly dependent on the current in the first-stage differential amplifier. The low input bias current requirements of the TLC272 and TLC277 result in a very low noise current, which is insignificant in most applications. This feature makes the devices especially favorable over bipolar devices when using values of circuit impedance greater than 50 kΩ, since bipolar devices exhibit greater noise currents. – OUT + + (b) INVERTING AMPLIFIER OUT VI + – (a) NONINVERTING AMPLIFIER – VI VI OUT (c) UNITY-GAIN AMPLIFIER Figure 40. Guard-Ring Schemes output characteristics The output stage of the TLC272 and TLC277 is designed to sink and source relatively high amounts of current (see typical characteristics). If the output is subjected to a short-circuit condition, this high current capability can cause device damage under certain conditions. Output current capability increases with supply voltage. All operating characteristics of the TLC272 and TLC277 are measured using a 20-pF load. The devices can drive higher capacitive loads; however, as output load capacitance increases, the resulting response pole occurs at lower frequencies, thereby causing ringing, peaking, or even oscillation (see Figure 41). In many cases, adding a small amount of resistance in series with the load capacitance alleviates the problem. 30 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 TLC272, TLC272A, TLC272B, TLC272Y, TLC277 LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS SLOS091E – OCTOBER 1987 – REVISED FEBRUARY 2002 APPLICATION INFORMATION output characteristics (continued) (b) CL = 130 pF, RL = NO LOAD (a) CL = 20 pF, RL = NO LOAD 2.5 V – VO + VI TA = 25°C f = 1 kHz VIPP = 1 V CL – 2.5 V (d) TEST CIRCUIT (c) CL = 150 pF, RL = NO LOAD Figure 41. Effect of Capacitive Loads and Test Circuit Although the TLC272 and TLC277 possess excellent high-level output voltage and current capability, methods for boosting this capability are available, if needed. The simplest method involves the use of a pullup resistor (RP) connected from the output to the positive supply rail (see Figure 42). There are two disadvantages to the use of this circuit. First, the NMOS pulldown transistor N4 (see equivalent schematic) must sink a comparatively large amount of current. In this circuit, N4 behaves like a linear resistor with an on resistance between approximately 60 Ω and 180 Ω, depending on how hard the operational amplifier input is driven. With very low values of RP, a voltage offset from 0 V at the output occurs. Second, pullup resistor RP acts as a drain load to N4 and the gain of the operational amplifier is reduced at output voltage levels where N5 is not supplying the output current. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 31 TLC272, TLC272A, TLC272B, TLC272Y, TLC277 LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS SLOS091E – OCTOBER 1987 – REVISED FEBRUARY 2002 APPLICATION INFORMATION output characteristics (continued) VDD VI + IP RP VO – C IF R2 R1 IL RL – VO VDD – VO IF + IL + IP ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ + Rp = Ip = Pullup current required by the operational amplifier (typically 500 µA) Figure 42. Resistive Pullup to Increase VOH Figure 43. Compensation for Input Capacitance feedback Operational amplifier circuits almost always employ feedback, and since feedback is the first prerequisite for oscillation, some caution is appropriate. Most oscillation problems result from driving capacitive loads (discussed previously) and ignoring stray input capacitance. A small-value capacitor connected in parallel with the feedback resistor is an effective remedy (see Figure 43). The value of this capacitor is optimized empirically. electrostatic discharge protection The TLC272 and TLC277 incorporate an internal electrostatic discharge (ESD) protection circuit that prevents functional failures at voltages up to 2000 V as tested under MIL-STD-883C, Method 3015.2. Care should be exercised, however, when handling these devices as exposure to ESD may result in the degradation of the device parametric performance. The protection circuit also causes the input bias currents to be temperature dependent and have the characteristics of a reverse-biased diode. latch-up Because CMOS devices are susceptible to latch-up due to their inherent parasitic thyristors, the TLC272 and TLC277 inputs and outputs were designed to withstand –100-mA surge currents without sustaining latch-up; however, techniques should be used to reduce the chance of latch-up whenever possible. Internal protection diodes should not, by design, be forward biased. Applied input and output voltage should not exceed the supply voltage by more than 300 mV. Care should be exercised when using capacitive coupling on pulse generators. Supply transients should be shunted by the use of decoupling capacitors (0.1 µF typical) located across the supply rails as close to the device as possible. The current path established if latch-up occurs is usually between the positive supply rail and ground and can be triggered by surges on the supply lines and/or voltages on either the output or inputs that exceed the supply voltage. Once latch-up occurs, the current flow is limited only by the impedance of the power supply and the forward resistance of the parasitic thyristor and usually results in the destruction of the device. The chance of latch-up occurring increases with increasing temperature and supply voltages. 32 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 TLC272, TLC272A, TLC272B, TLC272Y, TLC277 LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS SLOS091E – OCTOBER 1987 – REVISED FEBRUARY 2002 APPLICATION INFORMATION 10 kΩ 10 kΩ 0.016 µF 0.016 µF 10 kΩ – 10 kΩ 5V 10 kΩ 1/2 TLC272 – 1/2 TLC272 – VI 1/2 TLC272 Low Pass + + + High Pass 5 kΩ Band Pass R = 5 kΩ(3/d-1) (see Note A) NOTE A: d = damping factor, 1/Q Figure 44. State-Variable Filter 12 V VI + 1/2 TLC272 H.P. 5082-2835 + 1/2 TLC272 – 0.5 µF Mylar N.O. Reset VO – 100 kΩ Figure 45. Positive-Peak Detector POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 33 TLC272, TLC272A, TLC272B, TLC272Y, TLC277 LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS SLOS091E – OCTOBER 1987 – REVISED FEBRUARY 2002 APPLICATION INFORMATION VI (see Note A) 100 kΩ 1.2 kΩ 0.47 µF 4.7 kΩ – TL431 20 kΩ 1/2 TLC272 0.1 µF 1 kΩ TIP31 15 Ω + TIS193 250 µF, 25 V + – VO (see Note B) 10 kΩ 47 kΩ 0.01 µF 110 Ω 22 kΩ NOTES: A. VI = 3.5 to 15 V B. VO = 2 V, 0 to 1 A Figure 46. Logic-Array Power Supply VO (see Note A) 9V 10 kΩ 0.1 µF 9V C 100 kΩ – 1/2 TLC272 R2 10 kΩ 1/2 TLC272 VO (see Note B) + 100 kΩ fO + R1 47 kΩ R3 NOTES: A. VO(PP) = 8 V B. VO(PP) = 4 V Figure 47. Single-Supply Function Generator 34 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 [ ] 1 R1 4C(R2) R3 TLC272, TLC272A, TLC272B, TLC272Y, TLC277 LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS SLOS091E – OCTOBER 1987 – REVISED FEBRUARY 2002 APPLICATION INFORMATION 5V VI – + 10 kΩ 1/2 TLC277 100 kΩ – – 1/2 TLC277 VO + 10 kΩ – 10 kΩ 1/2 TLC277 95 kΩ R1,10 kΩ (see Note A) + VI + –5 V NOTE B: CMRR adjustment must be noninductive. Figure 48. Low-Power Instrumentation Amplifier 5V – R 10 MΩ R 10 MΩ 1/2 TLC272 VO + VI 2C 540 pF f NOTCH + R/2 5 MΩ C 270 pF 1 2pRC C 270 pF Figure 49. Single-Supply Twin-T Notch Filter POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 35 PACKAGE OPTION ADDENDUM www.ti.com 14-Oct-2022 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) Samples (4/5) (6) TLC272ACD ACTIVE SOIC D 8 75 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 272AC Samples TLC272ACDR ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 272AC Samples TLC272ACP ACTIVE PDIP P 8 50 RoHS & Green NIPDAU N / A for Pkg Type 0 to 70 TLC272ACP Samples TLC272ACPE4 ACTIVE PDIP P 8 50 RoHS & Green NIPDAU N / A for Pkg Type 0 to 70 TLC272ACP Samples TLC272AID ACTIVE SOIC D 8 75 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 272AI Samples TLC272AIDR ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 272AI Samples TLC272AIP ACTIVE PDIP P 8 50 RoHS & Green NIPDAU N / A for Pkg Type -40 to 85 TLC272AIP Samples TLC272BCD ACTIVE SOIC D 8 75 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 272BC Samples TLC272BCDR ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 272BC Samples TLC272BCP ACTIVE PDIP P 8 50 RoHS & Green NIPDAU N / A for Pkg Type 0 to 70 TLC272BCP Samples TLC272BCPE4 ACTIVE PDIP P 8 50 RoHS & Green NIPDAU N / A for Pkg Type 0 to 70 TLC272BCP Samples TLC272BCPS ACTIVE SO PS 8 80 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 P272B Samples TLC272BID ACTIVE SOIC D 8 75 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 272BI Samples TLC272BIDR ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 272BI Samples TLC272BIP ACTIVE PDIP P 8 50 RoHS & Green NIPDAU N / A for Pkg Type -40 to 85 TLC272BIP Samples TLC272CD ACTIVE SOIC D 8 75 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 272C Samples TLC272CDR ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 272C Samples TLC272CDRG4 ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 272C Samples TLC272CP ACTIVE PDIP P 8 50 RoHS & Green NIPDAU N / A for Pkg Type 0 to 70 TLC272CP Samples TLC272CPE4 ACTIVE PDIP P 8 50 RoHS & Green NIPDAU N / A for Pkg Type 0 to 70 TLC272CP Samples Addendum-Page 1 PACKAGE OPTION ADDENDUM www.ti.com 14-Oct-2022 Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) Samples (4/5) (6) TLC272CPS ACTIVE SO PS 8 80 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 P272 Samples TLC272CPSR ACTIVE SO PS 8 2000 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 P272 Samples TLC272CPW ACTIVE TSSOP PW 8 150 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 P272C Samples TLC272CPWR ACTIVE TSSOP PW 8 2000 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 P272C Samples TLC272CPWRG4 ACTIVE TSSOP PW 8 2000 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 P272C Samples TLC272ID ACTIVE SOIC D 8 75 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 272I Samples TLC272IDG4 ACTIVE SOIC D 8 75 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 272I Samples TLC272IDR ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 272I Samples TLC272IDRG4 ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 272I Samples TLC272IP ACTIVE PDIP P 8 50 RoHS & Green NIPDAU N / A for Pkg Type -40 to 85 TLC272IP Samples TLC272IPE4 ACTIVE PDIP P 8 50 RoHS & Green NIPDAU N / A for Pkg Type -40 to 85 TLC272IP Samples TLC277CD ACTIVE SOIC D 8 75 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 277C Samples TLC277CDG4 ACTIVE SOIC D 8 75 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 277C Samples TLC277CDR ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 277C Samples TLC277CP ACTIVE PDIP P 8 50 RoHS & Green NIPDAU N / A for Pkg Type 0 to 70 TLC277CP Samples TLC277CPS ACTIVE SO PS 8 80 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 P277 Samples TLC277CPSR ACTIVE SO PS 8 2000 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 P277 Samples TLC277ID ACTIVE SOIC D 8 75 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 277I Samples TLC277IDG4 ACTIVE SOIC D 8 75 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 277I Samples TLC277IDR ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 277I Samples TLC277IP ACTIVE PDIP P 8 50 RoHS & Green NIPDAU N / A for Pkg Type -40 to 85 TLC277IP Samples Addendum-Page 2 PACKAGE OPTION ADDENDUM www.ti.com 14-Oct-2022 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
TLC277CDR
物料型号: - TLC272 - TLC272A - TLC272B - TLC272Y - TLC277

这些是德州仪器(Texas Instruments)生产的LinCMOS®精密双运算放大器。

器件简介: 这些运算放大器结合了多种输入偏置电压等级、低偏置电压漂移、高输入阻抗、低噪声和接近通用BiFET设备的速度。它们使用德州仪器的硅门LinCMOS®技术,提供远超传统金属门工艺的偏置电压稳定性。

引脚分配: 文档提供了两种视图的引脚分配图,分别是TOP VIEW和CHIP THICKNESS视图。例如,TLC277的引脚分配如下: - 1: OUT - 2: IN+ - 3: IN- - 4: VDD - 5: GND - 6: 2OUT - 7-20: NC (无内部连接)

参数特性: 包括但不限于: - 偏置电压漂移:最大500微伏,在25°C下,VDD = 5伏 - 供电电压范围:0°C至70°C时为3伏至16伏 - 输入阻抗:典型值为10^12欧姆 - 噪声:在1kHz频率下,典型值为25纳伏/√Hz - ESD保护:内部ESD保护电路,可防止高达2000V的电压导致的功能性故障

功能详解: 这些运算放大器适用于多种应用,如传感器接口、模拟计算、放大器模块、有源滤波器和信号缓冲。它们还具有低压单电源运行能力,非常适合用于远程和难以接触的电池供电应用。

应用信息: 文档提供了关于单电源运行、输入特性、噪声性能、输出特性、反馈、ESD保护和Latch-up防护的详细信息。

封装信息: 提供了多种封装选项,包括小型外型封装(SOS)、芯片载体封装(FK)、陶瓷DIP(JG)、塑料DIP(P)和TSSOP(PW)。
TLC277CDR 价格&库存

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TLC277CDR
  •  国内价格 香港价格
  • 2500+11.098672500+1.37679
  • 5000+10.826185000+1.34299
  • 7500+10.689707500+1.32606

库存:5133

TLC277CDR
  •  国内价格 香港价格
  • 1+18.400721+2.28260
  • 5+17.125425+2.12440
  • 25+15.9412225+1.97750
  • 100+14.39264100+1.78540
  • 250+12.11533250+1.50290
  • 1000+11.204401000+1.38990

库存:410

TLC277CDR
  •  国内价格
  • 1+17.24832
  • 5+16.03854
  • 10+11.77437
  • 25+11.12756
  • 1000+10.44482

库存:410