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TLC3702MFKB

TLC3702MFKB

  • 厂商:

    BURR-BROWN(德州仪器)

  • 封装:

    SOIC

  • 描述:

    TLC3702M LOW-POWER LINCMOS DUAL

  • 数据手册
  • 价格&库存
TLC3702MFKB 数据手册
TLC3702 DUAL MICROPOWER LinCMOS™ VOLTAGE COMPARATORS SLCS013E − NOVEMBER 1986 − REVISED MARCH 2012 D Push-Pull CMOS Output Drives Capacitive D D Loads Without Pullup Resistor, IO = ± 8 mA Very Low Power . . . 100 μW Typ at 5 V Fast Response Time . . . tPLH = 2.7 μs Typ With 5-mV Overdrive Single-Supply Operation . . . 3 V to 16 V TLC3702M . . . 4 V to 16 V On-Chip ESD Protection 1OUT 1IN − 1IN + GND Texas Instruments LinCMOS™ process offers superior analog performance to standard CMOS processes. Along with the standard CMOS advantages of low power without sacrificing speed, high input impedance, and low bias currents, the LinCMOS™ process offers extremely stable input offset voltages with large differential input voltages. This characteristic makes it possible to build reliable CMOS comparators. 8 2 7 3 6 4 5 VDD 2OUT 2IN − 2IN + FK PACKAGE (TOP VIEW) NC 1OUT NC VDD NC description NC 1IN − NC 1IN + NC 4 3 2 1 20 19 18 5 17 6 16 7 15 8 14 9 10 11 12 13 NC GND NC The TLC3702 consists of two independent micropower voltage comparators designed to operate from a single supply and be compatible with modern HCMOS logic systems. They are functionally similar to the LM339 but use onetwentieth of the power for similar response times. The push-pull CMOS output stage drives capacitive loads directly without a powerconsuming pullup resistor to achieve the stated response time. Eliminating the pullup resistor not only reduces power dissipation, but also saves board space and component cost. The output stage is also fully compatible with TTL requirements. 1 NC 2OUT NC 2IN − NC 2IN+ NC D D D, JG, OR P PACKAGE (TOP VIEW) NC − No internal connection symbol (each comparator) IN + OUT IN − The TLC3702C is characterized for operation over the commercial temperature range of 0°C to 70°C. The TLC3702I is characterized for operation over the extended industrial temperature range of −40°C to 85°C. The TLC3702M is characterized for operation over the full military temperature range of −55°C to 125°C. Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. LinCMOS is a trademark of Texas Instruments Incorporated. Copyright © 1998, Texas Instruments Incorporated PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 1 TLC3702 DUAL MICROPOWER LinCMOS™ VOLTAGE COMPARATORS SLCS013E − NOVEMBER 1986 − REVISED MARCH 2012 AVAILABLE OPTIONS PACKAGES TA VIOmax at 25°C 0°C to 70°C 5 mV −40°C to 85°C 5 mV TLC3702ID −55°C to 125°C 5 mV TLC3702MD SMALL OUTLINE (D) CERAMIC (FK) CERAMIC DIP (JG) PLASTIC DIP (P) TLC3702CD — — TLC3702CP — — TLC3702IP TLC3702MFK TLC3702MJG — The D package is available taped and reeled. Add R suffix to the device type (e.g., TLC3702CDR). functional block diagram (each comparator) VDD IN+ Differential Input Circuits OUT IN− GND absolute maximum ratings over operating free-air temperature range (unless otherwise noted)† Supply voltage range, VDD (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.3 V to 18 V Differential input voltage, VID (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±18 V Input voltage range, VI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.3 V to VDD Output voltage range, VO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . − 0.3 V to VDD Input current, II . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±5 mA Output current, IO (each output) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20 mA Total supply current into VDD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 mA Total current out of GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 mA Continuous total power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Dissipation Rating Table Operating free-air temperature range, TA: TLC3702C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C TLC3702I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40°C to 85°C TLC3702M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55°C to 125°C Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65°C to 150°C Case temperature for 60 seconds: FK package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds: D or P package . . . . . . . . . . . . . . . . . 260°C Lead temperature 1,6 mm (1/16 inch) from case for 60 seconds: JG package . . . . . . . . . . . . . . . . . . . . 300°C † Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTES: 1. All voltage values, except differential voltages, are with respect to network ground. 2. Differential voltages are at IN+ with respect to IN −. 2 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 TLC3702 DUAL MICROPOWER LinCMOS™ VOLTAGE COMPARATORS SLCS013E − NOVEMBER 1986 − REVISED MARCH 2012 DISSIPATION RATING TABLE TA ≤ 25°C POWER RATING PACKAGE DERATING FACTOR ABOVE TA = 25°C TA = 70°C POWER RATING TA = 85°C POWER RATING TA = 125°C POWER RATING D 725 mW 5.8 mW/°C 464 mW 377 mW 145 mW FK 1375 mW 11.0 mW/°C 880 mW 715 mW 275 mW JG 1050 mW 8.4 mW/°C 672 mW 546 mW 210 mW P 1000 mW 8.0 mW/°C 640 mW 520 mW N/A recommended operating conditions TLC3702C MIN NOM 3 5 Supply voltage, VDD Common-mode input voltage, VIC High-level output current, IOH − 0.2 16 V VDD − 1.5 V −20 mA 20 mA 70 °C Low-level output current, IOL Operating free-air temperature, TA UNIT MAX 0 electrical characteristics at specified operating free-air temperature, VDD = 5 V (unless otherwise noted) PARAMETER TEST CONDITIONS† VIO Input offset voltage VDD = 5 V to 10 V, VIC = VICRmin, min See Note 3 IIO Input offset current VIC = 2.5 25V IIB Input bias current VICR Common mode input voltage range Common-mode CMRR Common-mode Common mode rejection ratio kSVR Supply-voltage Supply voltage rejection ratio TA TLC3702C MIN 25°C TYP MAX 1.2 5 0°C to 70°C 6.5 25°C 1 70°C VIC = 2.5 25V 5 70°C VIC = VICRmin VDD = 5 V to 10 V 0 to VDD − 1 0°C to 70°C 0 to VDD − 1.5 84 70°C 84 0°C 84 25°C 85 70°C 85 0°C 85 High level output voltage High-level VID = 1 V, IOH = − 4 mA 25°C 4.5 70°C 4.3 VOL Low level output voltage Low-level VID = −1 1 V, IOH = 4 mA 25°C IDD Supply current (both comparators) Outputs low, low No load dB dB 4.7 210 70°C 25°C nA V 25°C VOH nA pA 0.6 25°C mV pA 0.3 25°C UNIT V 300 375 18 0°C to 70°C 40 50 mV μA † All characteristics are measured with zero common-mode voltage unless otherwise noted. NOTE 3: The offset voltage limits given are the maximum values required to drive the output up to 4.5 V or down to 0.3 V. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 3 TLC3702 DUAL MICROPOWER LinCMOS™ VOLTAGE COMPARATORS SLCS013E − NOVEMBER 1986 − REVISED MARCH 2012 recommended operating conditions TLC3702I Supply voltage, VDD Common-mode input voltage, VIC High-level output current, IOH MIN NOM 3 5 −0.2 16 V VDD − 1.5 V −20 mA 20 mA 85 °C Low-level output current, IOL Operating free-air temperature, TA UNIT MAX −40 electrical characteristics at specified operating free-air temperature, VDD = 5 V (unless otherwise noted) PARAMETER TEST CONDITIONS† TA −40°C to 85°C VIO Input offset voltage VDD = 5 V to 10 V, VIC = VICRmin, See Note 3 IIO Input offset current VIC = 2.5 25V IIB VICR CMRR kSVR Input bias current Supply-voltage Supply voltage rejection ratio MIN 25°C TYP MAX 1.2 5 7 25°C 1 85°C VIC = 2.5 25V 5 85°C 25°C −40°C to 85°C 0 to VDD − 1.5 84 85°C 84 −40°C 83 25°C 85 85°C 85 −40°C 83 VDD = 5 V to 10 V VOH High level output voltage High-level VID = 1 V, V IOH = − 4 mA VOL Low level output voltage Low-level VID = −1 1 V, V IOH = − 4 mA IDD Supply current (both comparators) Outputs low, low No load 25°C 4.5 85°C 4.3 25°C 210 18 All characteristics are measured with zero common-mode voltage unless otherwise noted. NOTE 3. The offset voltage limits given are the maximum values required to drive the output up to 4.5 V or down to 0.3 V. 4 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 dB V 300 400 −40°C to 85°C † nA dB 4.7 85°C 25°C nA V 25°C VIC = VICRmin mV pA 2 0 to VDD − 1 UNIT pA 1 25°C Common mode input voltage range Common-mode Common-mode Common mode rejection ratio TLC3702I 40 65 mV μA TLC3702 DUAL MICROPOWER LinCMOS™ VOLTAGE COMPARATORS SLCS013E − NOVEMBER 1986 − REVISED MARCH 2012 recommended operating conditions TLC3702M MIN NOM Supply voltage, VDD 4 5 Common-mode input voltage, VIC High-level output current, IOH 0 16 V VDD − 1.5 V − 20 mA 20 mA 125 °C Low-level output current, IOL Operating free-air temperature, TA UNIT MAX − 55 electrical characteristics at specified operating free-air temperature, VDD = 5 V (unless otherwise noted) PARAMETER TEST CONDITIONS† TA −55°C to 125°C VIO Input offset voltage VDD = 5 V to 10 V, VIC = VICRmin, See Note 3 IIO Input offset current VIC = 2.5 25V IIB Input bias current kSVR Supply-voltage Supply voltage rejection ratio VDD = 5 V to 10 V VOH High level output voltage High-level VID = 1 V, V IOH = − 4 mA 15 VOL Low level output voltage Low-level VID = −1 1 V, V IOH = − 4 mA IDD Supply current (both comparators) Outputs low, low No load 30 25°C 84 125°C 83 −55°C 82 25°C 85 125°C 85 − 55°C 82 4.5 4.2 25°C nA dB dB 4.7 210 125°C 25°C nA V 0 to VDD − 1.5 25°C mV pA 0 to VDD − 1 125°C UNIT pA 5 125°C VIC = VICRmin 5 1 25°C VIC = 2.5 25V MAX 10 125°C Common mode input voltage range Common-mode Common-mode Common mode rejection ratio TYP 1.2 25°C −55°C to 125°C CMRR MIN 25°C 25°C VICR TLC3702M V 300 500 18 −55°C to 125°C 40 90 mV μA † All characteristics are measured with zero common-mode voltage unless otherwise noted. NOTE 3. The offset voltage limits given are the maximum values required to drive the output up to 4.5 V or down to 0.3 V. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 5 TLC3702 DUAL MICROPOWER LinCMOS™ VOLTAGE COMPARATORS SLCS013E − NOVEMBER 1986 − REVISED MARCH 2012 switching characteristics, VDD = 5 V, TA = 25°C PARAMETER TEST CONDITIONS TLC3702C, TLC3702I TLC3702M MIN tPLH Propagation delay time, low low-to-high-level to high level output† f = 10 kH kHz, CL = 50 pF Overdrive = 2 mV 4.5 Overdrive = 5 mV 2.7 Overdrive = 10 mV 1.9 Overdrive = 20 mV 1.4 Overdrive = 40 mV 1.1 VI = 1.4 V step at IN+ tPHL Propagation delay time, high high-to-low-level to low level output† f = 10 kH kHz, CL = 50 pF TYP μs 1.1 Overdrive = 2 mV 4 Overdrive = 5 mV 2.3 Overdrive = 10 mV 1.5 Overdrive = 20 mV 0.95 Overdrive = 40 mV 0.65 VI = 1.4 V step at IN+ UNIT MAX μs 0.15 tf Fall time f = 10 kHz, CL = 50 pF Overdrive = 50 mV 50 ns tr Rise time f = 10 kHz, CL = 50 pF Overdrive = 50 mV 125 ns † 6 Simultaneous switching of inputs causes degradation in output response. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 TLC3702 DUAL MICROPOWER LinCMOS™ VOLTAGE COMPARATORS SLCS013E − NOVEMBER 1986 − REVISED MARCH 2012 PRINCIPLES OF OPERATION LinCMOS™ process The LinCMOS™ process is a linear polysilicon-gate CMOS process. Primarily designed for single-supply applications, LinCMOS™ products facilitate the design of a wide range of high-performance analog functions from operational amplifiers to complex mixed-mode converters. While digital designers are experienced with CMOS, MOS technologies are relatively new for analog designers. This short guide is intended to answer the most frequently asked questions related to the quality and reliability of LinCMOS™ products. Further questions should be directed to the nearest TI field sales office. electrostatic discharge CMOS circuits are prone to gate oxide breakdown when exposed to high voltages even if the exposure is only for very short periods of time. Electrostatic discharge (ESD) is one of the most common causes of damage to CMOS devices. It can occur when a device is handled without proper consideration for environmental electrostatic charges, e.g., during board assembly. If a circuit in which one amplifier from a dual op amp is being used and the unused pins are left open, high voltages tend to develop. If there is no provision for ESD protection, these voltages may eventually punch through the gate oxide and cause the device to fail. To prevent voltage buildup, each pin is protected by internal circuitry. Standard ESD-protection circuits safely shunt the ESD current by providing a mechanism whereby one or more transistors break down at voltages higher than the normal operating voltages but lower than the breakdown voltage of the input gate. This type of protection scheme is limited by leakage currents which flow through the shunting transistors during normal operation after an ESD voltage has occurred. Although these currents are small, on the order of tens of nanoamps, CMOS amplifiers are often specified to draw input currents as low as tens of picoamps. To overcome this limitation, TI design engineers developed the patented ESD-protection circuit shown in Figure 1. This circuit can withstand several successive 2-kV ESD pulses, while reducing or eliminating leakage currents that may be drawn through the input pins. A more detailed discussion of the operation of the TI ESD-protection circuit is presented on the next page. All input and output pins on LinCMOS™ and Advanced LinCMOS™ products have associated ESD-protection circuitry that undergoes qualification testing to withstand 2000 V discharged from a 100-pF capacitor through a 1500-Ω resistor (human body model) and 200 V from a 100-pF capacitor with no current-limiting resistor (charged device model). These tests simulate both operator and machine handling of devices during normal test and assembly operations. VDD R1 Input To Protect Circuit R2 Q1 Q2 D1 D2 D3 GND Figure 1. LinCMOS™ ESD-Protection Schematic LinCMOS and Advanced LinCMOS are trademarks of Texas Instruments Incorporated. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 7 TLC3702 DUAL MICROPOWER LinCMOS™ VOLTAGE COMPARATORS SLCS013E − NOVEMBER 1986 − REVISED MARCH 2012 PRINCIPLES OF OPERATION input protection circuit operation Texas Instruments patented protection circuitry allows for both positive- and negative-going ESD transients. These transients are characterized by extremely fast rise times and usually low energies, and can occur both when the device has all pins open and when it is installed in a circuit. positive ESD transients Initial positive charged energy is shunted through Q1 to VSS. Q1 turns on when the voltage at the input rises above the voltage on the VDD pin by a value equal to the VBE of Q1. The base current increases through R2 with input current as Q1 saturates. The base current through R2 forces the voltage at the drain and gate of Q2 to exceed its threshold level (VT ∼ 22 to 26 V) and turn Q2 on. The shunted input current through Q1 to VSS is now shunted through the n-channel enhancement-type MOSFET Q2 to VSS. If the voltage on the input pin continues to rise, the breakdown voltage of the zener diode D3 is exceeded and all remaining energy is dissipated in R1 and D3. The breakdown voltage of D3 is designed to be 24 V to 27 V, which is well below the gate-oxide voltage of the circuit to be protected. negative ESD transients The negative charged ESD transients are shunted directly through D1. Additional energy is dissipated in R1 and D2 as D2 becomes forward biased. The voltage seen by the protected circuit is −0.3 V to −1 V (the forward voltage of D1 and D2). circuit-design considerations LinCMOS™ products are being used in actual circuit environments that have input voltages that exceed the recommended common-mode input voltage range and activate the input protection circuit. Even under normal operation, these conditions occur during circuit power up or power down, and in many cases, when the device is being used for a signal conditioning function. The input voltages can exceed VICR and not damage the device only if the inputs are current limited. The recommended current limit shown on most product data sheets is ±5 mA. Figure 2 and Figure 3 show typical characteristics for input voltage versus input current. Normal operation and correct output state can be expected even when the input voltage exceeds the positive supply voltage. Again, the input current should be externally limited even though internal positive current limiting is achieved in the input protection circuit by the action of Q1. When Q1 is on, it saturates and limits the current to approximately 5-mA collector current by design. When saturated, Q1 base current increases with input current. This base current is forced into the VDD pin and into the device IDD or the VDD supply through R2 producing the current limiting effects shown in Figure 2. This internal limiting lasts only as long as the input voltage is below the VT of Q2. When the input voltage exceeds the negative supply voltage, normal operation is affected and output voltage states may not be correct. Also, the isolation between channels of multiple devices (duals and quads) can be severely affected. External current limiting must be used since this current is directly shunted by D1 and D2 and no internal limiting is achieved. If normal output voltage states are required, an external input voltage clamp is required (see Figure 4). 8 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 TLC3702 DUAL MICROPOWER LinCMOS™ VOLTAGE COMPARATORS SLCS013E − NOVEMBER 1986 − REVISED MARCH 2012 PRINCIPLES OF OPERATION circuit-design considerations (continued) INPUT CURRENT vs POSITIVE INPUT VOLTAGE 8 INPUT CURRENT vs NEGATIVE INPUT VOLTAGE −10 TA = 25° C −9 7 −8 I I − Input Current − mA 6 I I − Input Current − mA TA = 25° C 5 4 3 2 −7 −6 −5 −4 −3 −2 1 −1 0 VDD VDD + 4 VDD + 8 VDD + 12 −0 −0.3 −0.5 VI − Input Voltage − V −0.7 −0.9 VI − Input Voltage − V Figure 2 Figure 3 VDD VI RI + Positive Voltage Input Current Limit : 1/2 TLC3702 Vref − See Note A RI + V I * V DD * 0.3 V 5 mA Negative Voltage Input Current Limit : * V I * V DD * (* 0.3 V) RI + 5 mA NOTE A: If the correct input state is required when the negative input exceeds GND, a Schottky clamp is required. Figure 4. Typical Input Current-Limiting Configuration for a LinCMOS™ Comparator POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 9 TLC3702 DUAL MICROPOWER LinCMOS™ VOLTAGE COMPARATORS SLCS013E − NOVEMBER 1986 − REVISED MARCH 2012 PARAMETER MEASUREMENT INFORMATION The TLC3702 contains a digital output stage which, if held in the linear region of the transfer curve, can cause damage to the device. Conventional operational amplifier/comparator testing incorporates the use of a servo loop which is designed to force the device output to a level within this linear region. Since the servo-loop method of testing cannot be used, we offer the following alternatives for measuring parameters such as input offset voltage, common-mode rejection, etc. To verify that the input offset voltage falls within the limits specified, the limit value is applied to the input as shown in Figure 5(a). With the noninverting input positive with respect to the inverting input, the output should be high. With the input polarity reversed, the output should be low. A similar test can be made to verify the input offset voltage at the common-mode extremes. The supply voltages can be slewed to provide greater accuracy, as shown in Figure 5(b) for the VICR test. This slewing is done instead of changing the input voltages. A close approximation of the input offset voltage can be obtained by using a binary search method to vary the differential input voltage while monitoring the output state. When the applied input voltage differential is equal, but opposite in polarity, to the input offset voltage, the output changes states. Figure 6 illustrates a practical circuit for direct dc measurement of input offset voltage that does not bias the comparator in the linear region. The circuit consists of a switching mode servo loop in which IC1a generates a triangular waveform of approximately 20-mV amplitude. IC1b acts as a buffer, with C2 and R4 removing any residual dc offset. The signal is then applied to the inverting input of the comparator under test, while the noninverting input is driven by the output of the integrator formed by IC1c through the voltage divider formed by R8 and R9. The loop reaches a stable operating point when the output of the comparator under test has a duty cycle of exactly 50%, which can only occur when the incoming triangle wave is sliced symmetrically or when the voltage at the noninverting input exactly equals the input offset voltage. Voltage dividers R8 and R9 provide an increase in input offset voltage by a factor of 100 to make measurement easier. The values of R5, R7, R8, and R9 can significantly influence the accuracy of the reading; therefore, it is suggested that their tolerance level be one percent or lower. Measuring the extremely low values of input current requires isolation from all other sources of leakage current and compensation for the leakage of the test socket and board. With a good picoammeter, the socket and board leakage can be measured with no device in the socket. Subsequently, this open socket leakage value can be subtracted from the measurement obtained with a device in the socket to obtain the actual input current of the device. 5V 1V + Applied VIO + − Limit − Applied VIO VO Limit VO −4V (a) VIO WITH VIC = 0 V (b) VIO WITH VIC = 4 V Figure 5. Method for Verifying That Input Offset Voltage Is Within Specified Limits 10 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 TLC3702 DUAL MICROPOWER LinCMOS™ VOLTAGE COMPARATORS SLCS013E − NOVEMBER 1986 − REVISED MARCH 2012 PARAMETER MEASUREMENT INFORMATION VDD IC1a 1/4 TLC274CN + Buffer C2 1 μF − DUT − R4 47 kΩ R6 1 MΩ − R3 100 Ω VIO (X100) Integrator C4 0.1 μF − Triangle Generator R2 10 kΩ + R7 1.8 kΩ 1% IC1b 1/4 TLC274CN + IC1c 1/4 TLC274CN + R1 240 kΩ C1 0.1 μF C3 0.68 μF R5 1.8 kΩ 1% R9 100 Ω 1% R8 10 kΩ 1% Figure 6. Circuit for Input Offset Voltage Measurement Response time is defined as the interval between the application of an input step function and the instant when the output reaches 50% of its maximum value. Response time for the low-to-high-level output is measured from the leading edge of the input pulse, while response time for the high-to-low-level output is measured from the trailing edge of the input pulse. Response time measurement at low input signal levels can be greatly affected by the input offset voltage. The offset voltage should be balanced by the adjustment at the inverting input as shown in Figure 7, so that the circuit is just at the transition point. A low signal, for example 105-mV or 5-mV overdrive, causes the output to change state. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 11 TLC3702 DUAL MICROPOWER LinCMOS™ VOLTAGE COMPARATORS SLCS013E − NOVEMBER 1986 − REVISED MARCH 2012 PARAMETER MEASUREMENT INFORMATION VDD Pulse Generator 1 μF 50 Ω + DUT 1V 10 Ω 10-Turn Potentiometer − 1 kΩ CL (see Note A) 0.1 μF −1V TEST CIRCUIT Overdrive Overdrive Input Input 100 mV 100 mV 90% Low-to-High Level Output High-to-Low Level Output 50% 10% 90% 50% 10% tr tf tPLH tPHL VOLTAGE WAVEFORMS NOTE A: CL includes probe and jig capacitance. Figure 7. Response, Rise, and Fall Times Circuit and Voltage Waveforms 12 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 TLC3702 DUAL MICROPOWER LinCMOS™ VOLTAGE COMPARATORS SLCS013E − NOVEMBER 1986 − REVISED MARCH 2012 TYPICAL CHARACTERISTICS† Table of Graphs FIGURE VIO Input offset voltage Distribution 8 IIB Input bias current vs Free-air temperature 9 CMRR Common-mode rejection ratio vs Free-air temperature 10 kSVR Supply-voltage rejection ratio vs Free-air temperature 11 VOH High level output current High-level vs Free Free-air air temperature vs High-level output current 12 13 VOL Low level output voltage Low-level vs Low Low-level level output current vs Free-air temperature 14 15 tt Transition time vs Load capacitance 16 Supply current response vs Time 17 Low-to-high-level output response Low-to-high level output propagation delay time 18 High-to-low level output response High-to-low level output propagation delay time 19 tPLH Low-to-high level output propagation delay time vs Supply voltage 20 tPHL High-to-low level output propagation delay time vs Supply voltage 21 Supply current vs Frequency vs Supply voltage vs Free-air temperature 22 23 24 IDD INPUT BIAS CURRENT vs FREE-AIR TEMPERATURE DISTRIBUTION OF INPUT OFFSET VOLTAGE 180 Number of Units 160 140 120 100 80 60 40 20 ÉÉ ÉÉ ÉÉ Ç ÉÉ Ç ÉÉ Ç ÉÉ Ç ÉÉ Ç Ç ÉÉ Ç Ç ÉÉ Ç Ç ÇÇ É ÉÉ ÉÉ Ç Ç ÇÉ ÇÇ É ÉÉ ÉÉ Ç Ç ÇÇ É ÇÇ ÇÇ É ÉÉ Ç É ÉÉ ÇÇÉ ÇÇÇÇ ÉÉ ÇÇ ÉÇ ÉÉ ÇÇ ÉÉ ÇÇ 0 −5 10 VDD = 5 V VIC = 2.5 V TA = 25° C 698 Units Tested From 4 Wafer Lots −4 −3 −2 −1 0 1 2 3 4 VDD = 5 V VIC = 2.5 V IIB − Input Bias Current − nA 200 5 1 0.1 0.01 0.001 25 VIO − Input Offset Voltage − mV Figure 8 † 50 75 100 125 TA − Free-Air Temperature − °C Figure 9 Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 13 TLC3702 DUAL MICROPOWER LinCMOS™ VOLTAGE COMPARATORS SLCS013E − NOVEMBER 1986 − REVISED MARCH 2012 TYPICAL CHARACTERISTICS† SUPPLY VOLTAGE REJECTION RATIO vs FREE-AIR TEMPERATURE 90 90 88 kSVR − Supply Voltage Rejection Ratio − dB CMRR − Common-Mode Rejection Ratio − dB COMMON-MODE REJECTION RATIO vs FREE-AIR TEMPERATURE VDD = 5 V 86 84 82 80 78 76 74 72 70 −75 −50 −25 0 25 50 75 100 88 VDD = 5 V to 10 V 86 84 82 80 78 76 74 72 70 −75 125 −50 −25 Figure 10 VOH− High-Input Level Output Voltage −V VOH − High-Level Outout Voltage − V 75 100 4.9 4.85 4.8 4.75 4.7 4.65 4.6 VDD = 16 V −0.25 −0.5 −0.75 10 V −1 5V −1.25 4V −1.5 −1.75 3V TA = 25° C −2 −25 0 25 50 75 100 125 0 −2.5 −5 −7.5 −10 −12.5 −15 −17.5 −20 IOH − High-Level Output Current − mA TA − Free-Air Temperature − °C Figure 12 Figure 13 Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices. 14 125 VDD VDD = 5 V IOH = − 4 mA 4.55 † 50 HIGH-LEVEL OUTPUT VOLTAGE vs HIGH-LEVEL OUTPUT CURRENT 5 4.5 −75 −50 25 Figure 11 HIGH-LEVEL OUTPUT VOLTAGE vs FREE-AIR TEMPERATURE 4.95 0 TA − Free-Air Temperature − °C TA − Free-Air Temperature − °C POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 TLC3702 DUAL MICROPOWER LinCMOS™ VOLTAGE COMPARATORS SLCS013E − NOVEMBER 1986 − REVISED MARCH 2012 TYPICAL CHARACTERISTICS† LOW-LEVEL OUTPUT VOLTAGE vs LOW-LEVEL OUTPUT CURRENT LOW-LEVEL OUTPUT VOLTAGE vs FREE-AIR TEMPERATURE 1.5 VOL − Low-Level Output Voltage − V 3V VOL − Low-Level Output Voltage − mV 400 TA = 25°C 4V 1.25 5V 1 0.75 10 V 0.5 0.25 0 VDD = 16 V 0 2 4 6 8 10 12 14 16 18 350 300 250 200 150 100 50 0 −75 20 VDD = 5 V IOL = 4 mA −50 IOL − Low-Level Output Current − mA −25 VDD = 5 V TA = 25°C IDD − Supply Current − mA Rise Time 150 Fall Time 100 125 VDD = 5 V CL = 50 pF f = 10 kHz 5 0 100 75 Output Voltage − V t t − Transition Time − ns 10 200 50 25 0 0 200 400 600 800 5 0 1000 t − Time CL − Load Capacitance − pF Figure 16 † 75 SUPPLY CURRENT RESPONSE TO AN OUTPUT VOLTAGE TRANSITION 250 125 50 Figure 15 OUTPUT TRANSITION TIME vs LOAD CAPACITANCE 175 25 TA − Free-Air Temperature − °C Figure 14 225 0 Figure 17 Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 15 TLC3702 DUAL MICROPOWER LinCMOS™ VOLTAGE COMPARATORS SLCS013E − NOVEMBER 1986 − REVISED MARCH 2012 TYPICAL CHARACTERISTICS LOW-TO-HIGH-LEVEL OUTPUT RESPONSE FOR VARIOUS INPUT OVERDRIVES 5 5 VO − Output Voltage − V 40 mV 20 mV 10 mV 5 mV 2 mV VO − Output Voltage − V 40 20 10 5 2 0 0 100 100 VDD = 5 V TA = 25°C CL = 50 pF 0 0 1 2 3 Differential Input Voltage − mV Differential Input Voltage − mV HIGH-TO-LOW-LEVEL OUTPUT RESPONSE FOR VARIOUS INPUT OVERDRIVES 4 mV mV mV mV mV VDD = 5 V TA = 25° C CL = 50 pF 0 5 0 tPLH − Low-to-High-Level Output Response Time − μs 1 Figure 18 4 5 mV 10 mV 2 20 mV 1 0 40 mV 0 2 4 6 8 10 12 14 16 t PHL − High-to-Low-Level Output Response − μs t PLH − Low-to-High-Level Output Response − μs Overdrive = 2 mV 3 6 5 CL = 50 pF TA = 25°C 5 Overdrive = 2 mV 4 3 5 mV 2 10 mV 20 mV 1 40 mV 0 0 2 VDD − Supply Voltage − V 4 6 8 Figure 21 POST OFFICE BOX 655303 10 12 VDD − Supply Voltage − V Figure 20 16 4 HIGH-TO-LOW-LEVEL OUTPUT RESPONSE TIME vs SUPPLY VOLTAGE CL = 50 pF TA = 25°C 5 3 Figure 19 LOW-TO-HIGH-LEVEL OUTPUT RESPONSE TIME vs SUPPLY VOLTAGE 6 2 tPHL − High-to-Low-Level Output Response Time − μs • DALLAS, TEXAS 75265 14 16 TLC3702 DUAL MICROPOWER LinCMOS™ VOLTAGE COMPARATORS SLCS013E − NOVEMBER 1986 − REVISED MARCH 2012 TYPICAL CHARACTERISTICS† AVERAGE SUPPLY CURRENT (PER COMPARATOR) vs FREQUENCY SUPPLY CURRENT vs SUPPLY VOLTAGE 40 10000 Outputs Low No Loads 35 VDD = 16 V 1000 VDD − Supply Current − μ A VDD − Supply Current − μ A TA = 25°C CL = 50 pF 10 V 5V 100 4V TA = − 55°C TA = − 40°C 30 25 TA = − 25°C 20 15 TA = − 125°C TA = 85°C 10 5 3V 10 0.01 0.1 1 10 0 100 0 1 f − Frequency − kHz 2 3 4 5 6 7 8 VDD − Supply Voltage − V Figure 22 Figure 23 SUPPLY CURRENT vs FREE-AIR TEMPERATURE 30 VDD = 5 V No Load IDD − Supply Current −μA 25 20 Outputs Low 15 10 Outputs High 5 0 −75 −50 −25 0 25 50 75 100 125 TA − Free-Air Temperature − °C Figure 24 † Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 17 TLC3702 DUAL MICROPOWER LinCMOS™ VOLTAGE COMPARATORS SLCS013E − NOVEMBER 1986 − REVISED MARCH 2012 APPLICATION INFORMATION The inputs should always remain within the supply rails in order to avoid forward biasing the diodes in the electrostatic discharge (ESD) protection structure. If either input exceeds this range, the device is not damaged as long as the input is limited to less than 5 mA. To maintain the expected output state, the inputs must remain within the common-mode range. For example, at 25°C with VDD = 5 V, both inputs must remain between −0.2 V and 4 V to ensure proper device operation. To ensure reliable operation, the supply should be decoupled with a capacitor (0.1 μF) that is positioned as close to the device as possible. The TLC3702 has internal ESD-protection circuits that prevent functional failures at voltages up to 2000 V as tested under MIL-STD-883C, Method 3015.2; however, care should be exercised in handling these devices as exposure to ESD may result in the degradation of the device parametric performance. Table of Applications FIGURE Pulse-width-modulated motor speed controller 25 Enhanced supply supervisor 26 Two-phase nonoverlapping clock generator 27 Micropower switching regulator 28 12 V 5V EN 1/2 TLC3702 See Note A + 100 kΩ + 10 kΩ 5V SN75603 Half-H Driver DIR − 10 kΩ C1 0.01 μF (see Note B) − Motor 1/2 TLC3704 12 V DIR 10 kΩ 5V EN 10 kΩ Motor Speed Control Potentiometer 5V Direction Control S1 SPDT NOTES: A. The recommended minimum capacitance is 10 μF to eliminate common ground switching noise. B. Adjust C1 for change in oscillator frequency. Figure 25. Pulse-Width-Modulated Motor Speed Controller 18 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 SN75604 Half-H Driver TLC3702 DUAL MICROPOWER LinCMOS™ VOLTAGE COMPARATORS SLCS013E − NOVEMBER 1986 − REVISED MARCH 2012 APPLICATION INFORMATION 5V VCC 12 V 12-V Sense 3.3 kΩ + 5V 10 kΩ 1/2 TLC3702 TL7705A RESIN 1 kΩ SENSE RESET To μP Reset − REF CT GND 2.5 V 1 μF 1/2 TLC3702 + V(UNREG) (see Note A) R1 CT (see Note B) To μP Interrupt Early Power Fail − R2 Monitors 5 VDC Rail Monitors 12 VDC Rail Early Power Fail Warning (R1 +R2) R2 B. The value of CT determines the time delay of reset. NOTES: A. V (UNREG) + 2.5 Figure 26. Enhanced Supply Supervisor POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 19 TLC3702 DUAL MICROPOWER LinCMOS™ VOLTAGE COMPARATORS SLCS013E − NOVEMBER 1986 − REVISED MARCH 2012 APPLICATION INFORMATION 12 V 12 V R1 100 kΩ (see Note B) 12 V − − R2 5 kΩ (see Note C) 1/2 TLC3702 100 kΩ + 22 kΩ 100 kΩ 100 kΩ 1OUT + − C1 0.01 μF (see Note A) + R3 100 kΩ (see Note B) 1OUT 2OUT NOTES: A. Adjust C1 for a change in oscillator frequency where: 1/f = 1.85(100 kΩ)C1 B. Adjust R1 and R3 to change duty cycle C. Adjust R2 to change deadtime Figure 27. Two-Phase Nonoverlapping Clock Generator POST OFFICE BOX 655303 1/2 TLC3702 2OUT 12 V 20 1/2 TLC3702 • DALLAS, TEXAS 75265 TLC3702 DUAL MICROPOWER LinCMOS™ VOLTAGE COMPARATORS SLCS013E − NOVEMBER 1986 − REVISED MARCH 2012 APPLICATION INFORMATION V + 6 V to 16 V I I L + 0.01 mA to 0.25 mA V 1/2 TLC3702 + + 2.5 VI 1/2 TLC3702 (R1 ) R2) R2 SK9504 (see Note C) G S 100 kΩ − 100 kΩ VI O + − 100 kΩ D + C1 180 μF (see Note A) VI 47 μF Tantalum IN5818 100 kΩ R1 R=6Ω L = 1 mH (see Note D) VO 100 kΩ TLC271 (see Note B) VI 470 μF RL + R2 100 kΩ − C2 100 pF 100 kΩ 270 kΩ VI LM385 2.5 V NOTES: A. Adjust C1 for a change in oscillator frequency B. TLC271 − Tie pin 8 to pin 7 for low bias operation C. SK9504 − VDS = 40 V IDS = 1 A D. To achieve microampere current drive, the inductance of the circuit must be increased. Figure 28. Micropower Switching Regulator POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 21 PACKAGE OPTION ADDENDUM www.ti.com 7-Dec-2023 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) Samples (4/5) (6) 5962-9153201Q2A ACTIVE LCCC FK 20 55 Non-RoHS & Green SNPB N / A for Pkg Type -55 to 125 59629153201Q2A TLC3702 MFKB 5962-9153201QPA LIFEBUY CDIP JG 8 50 Non-RoHS & Green SNPB N / A for Pkg Type -55 to 125 9153201QPA TLC3702M 5962-9153202QPA LIFEBUY CDIP JG 8 50 Non-RoHS & Green SNPB N / A for Pkg Type -55 to 125 59629153202QPA TLC3702CD LIFEBUY SOIC D 8 75 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 3702C TLC3702CDR ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 3702C TLC3702CDRG4 ACTIVE SOIC D 8 2500 TBD Call TI Call TI 0 to 70 TLC3702CP LIFEBUY PDIP P 8 50 RoHS & Green NIPDAU N / A for Pkg Type 0 to 70 TLC3702CP Samples Samples TLC3702CPS LIFEBUY SO PS 8 80 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 P3702 TLC3702CPSR LIFEBUY SO PS 8 2000 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 P3702 TLC3702CPWR ACTIVE TSSOP PW 8 2000 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 P3702 TLC3702ID LIFEBUY SOIC D 8 75 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 3702I TLC3702IDG4 LIFEBUY SOIC D 8 75 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 3702I TLC3702IDR ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 3702I TLC3702IDRG4 LIFEBUY SOIC D 8 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 3702I TLC3702IP LIFEBUY PDIP P 8 50 RoHS & Green NIPDAU N / A for Pkg Type -40 to 85 TLC3702IP TLC3702IPE4 LIFEBUY PDIP P 8 50 RoHS & Green NIPDAU N / A for Pkg Type -40 to 85 TLC3702IP TLC3702IPW LIFEBUY TSSOP PW 8 150 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 P3702I TLC3702IPWR ACTIVE TSSOP PW 8 2000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 P3702I TLC3702IPWRG4 ACTIVE TSSOP PW 8 2000 TBD Call TI Call TI -40 to 85 TLC3702MD LIFEBUY SOIC D 8 75 RoHS & Green NIPDAU Level-1-260C-UNLIM -55 to 125 3702M TLC3702MDG4 LIFEBUY SOIC D 8 75 RoHS & Green NIPDAU Level-1-260C-UNLIM -55 to 125 3702M TLC3702MDR ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM -55 to 125 3702M Addendum-Page 1 Samples Samples Samples Samples Samples Samples PACKAGE OPTION ADDENDUM www.ti.com 7-Dec-2023 Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) Samples (4/5) (6) TLC3702MDRG4 ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM -55 to 125 3702M TLC3702MFKB ACTIVE LCCC FK 20 55 Non-RoHS & Green SNPB N / A for Pkg Type -55 to 125 59629153201Q2A TLC3702 MFKB TLC3702MJG LIFEBUY CDIP JG 8 50 Non-RoHS & Green SNPB N / A for Pkg Type -55 to 125 TLC3702MJG TLC3702MJGB LIFEBUY CDIP JG 8 50 Non-RoHS & Green SNPB N / A for Pkg Type -55 to 125 9153201QPA TLC3702M (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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