TLV2322, TLV2322Y, TLV2324, TLV2324Y
LinCMOS LOW-VOLTAGE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS187 – FEBRUARY 1997
D
D
D
D
D
D
D
D
TLV2322
D OR P PACKAGE
(TOP VIEW)
Wide Range of Supply Voltages Over
Specified Temperature Range:
TA = – 40°C to 85°C . . . 2 V to 8 V
Fully Characterized at 3 V and 5 V
Single-Supply Operation
Common-Mode Input Voltage Range
Extends Below the Negative Rail and up to
VDD –1 V at TA = 25°C
Output Voltage Range Includes Negative
Rail
High Input Impedance . . . 1012 Ω Typical
ESD-Protection Circuitry
Designed-In Latch-Up Immunity
1OUT
1IN –
1IN +
VDD – /GND
1
8
2
7
3
6
4
5
VDD
2OUT
2IN –
2IN +
TLV2322
PW PACKAGE
(TOP VIEW)
1
2
3
4
1OUT
1IN–
1IN +
VDD – / GND
description
8
7
6
5
VDD +
2OUT
2IN –
2IN +
TLV2324
D OR N PACKAGE
(TOP VIEW)
The TLV232x operational amplifiers are in a family
of devices that has been specifically designed for
use in low-voltage single-supply applications.
This amplifier is especially well suited to
ultra-low-power systems that require devices to
consume the absolute minimum of supply
currents. Each amplifier is fully functional down to
a minimum supply voltage of 2 V, is fully
characterized, tested, and specified at both 3-V
and 5-V power supplies. The common-mode input
voltage range includes the negative rail and
extends to within 1 V of the positive rail.
1OUT
1IN –
1IN +
VDD+
2IN +
2IN –
2OUT
1
14
2
13
3
12
4
11
5
10
6
9
7
8
4OUT
4IN –
4IN +
VDD – / GND
3IN +
3IN –
3OUT
TLV2324
PW PACKAGE
(TOP VIEW)
These amplifiers are specifically targeted for use
in very low-power, portable, battery-driven
applications with the maximum supply current per
operational amplifier specified at only 27 µA over
its full temperature range of – 40°C to 85°C.
1OUT
1IN –
1IN +
VDD+
2IN +
2IN –
2OUT
1
14
7
8
4OUT
4IN –
4IN +
VDD – / GND
3IN +
3IN –
3OUT
AVAILABLE OPTIONS
PACKAGED DEVICES
TA
– 40°C to 85°C
VIOmax AT
25°C
SMALL OUTLINE†
9 mV
10 mV
CHIP FORM§
(Y)
PLASTIC DIP
(N)
PLASTIC DIP
(P)
TSSOP‡
(PW)
TLV2322ID
—
TLV2322IP
TLV2322IPWLE
TLV2322Y
TLV2324ID
TLV2324IN
—
TLV2324IPWLE
TLV2324Y
(D)
† The D package is available taped and reeled. Add R suffix to the device type (e.g., TLV2322IDR).
‡ The PW package is only available left-end taped and reeled (e.g., TLV2322IPWLE).
§ Chip forms are tested at 25°C only.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
LinCMOS is a trademark of Texas Instruments Incorporated.
Copyright 1997, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
1
TLV2322, TLV2322Y, TLV2324, TLV2324Y
LinCMOS LOW-VOLTAGE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS187 – FEBRUARY 1997
description (continued)
Low-voltage and low-power operation has been made possible by using the Texas Instruments silicon-gate
LinCMOS technology. The LinCMOS process also features extremely high input impedance and ultra-low bias
currents making these amplifiers ideal for interfacing to high-impedance sources such as sensor circuits or filter
applications.
To facilitate the design of small portable equipment, the TLV232x is made available in a wide range of package
options, including the small-outline and thin-shrink small-outline packages (TSSOP). The TSSOP package has
significantly reduced dimensions compared to a standard surface-mount package. Its maximum height of only
1.1 mm makes it particularly attractive when space is critical.
The device inputs and outputs are designed to withstand –100-mA currents without sustaining latch-up. The
TLV232x incorporates internal ESD-protection circuits that prevent functional failures at voltages up to 2000 V
as tested under MIL-STD 883C, Method 3015.2; however, care should be exercised in handling these devices
as exposure to ESD can result in the degradation of the device parametric performance.
TLV2322Y chip information
This chip, when properly assembled, displays characteristics similar to the TLV2322I. Thermal compression or
ultrasonic bonding may be used on the doped-aluminum bonding pads. Chips may be mounted with conductive
epoxy or a gold-silicon preform.
BONDING PAD ASSIGNMENTS
(5)
(4)
(3)
1IN +
VDD
(8)
(3)
+
1OUT
(2)
–
1IN –
2IN +
(6)
(2)
(5)
+
2OUT
(6)
–
2IN –
59
(4)
VDD – /GND
CHIP THICKNESS: 15 MILS TYPICAL
BONDING PADS: 4 × 4 MILS MINIMUM
(1)
(7)
(8)
TJmax = 150°C
TOLERANCES ARE ± 10%.
72
2
POST OFFICE BOX 655303
ALL DIMENSIONS ARE IN MILS.
• DALLAS, TEXAS 75265
TLV2322, TLV2322Y, TLV2324, TLV2324Y
LinCMOS LOW-VOLTAGE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS187 – FEBRUARY 1997
TLV2324Y chip information
This chip, when properly assembled, display characteristics similar to the TLV2324. Thermal compression or
ultrasonic bonding may be used on the doped-aluminum bonding pads. Chips may be mounted with conductive
epoxy or a gold-silicon preform.
BONDING PAD ASSIGNMENTS
(14)
(13)
(12) (11)
(10)
(9)
(8)
1IN +
VDD
(4)
(3)
+
–
1IN –
2IN +
2IN –
68
3IN +
(1)
1OUT
(2)
(5)
+
(6)
(7)
2OUT
–
(10)
+
(8)
3OUT
(9)
–
3IN –
(12)
+
4IN +
(1)
(2)
(3)
(4)
(5)
(6)
(7)
4IN –
(14)
(13)
4OUT
–
(11)
108
VDD– /GND
CHIP THICKNESS: 15 MILS TYPICAL
BONDING PADS: 4 × 4 MILS MINIMUM
TJmax = 150°C
TOLERANCES ARE ± 10%.
ALL DIMENSIONS ARE IN MILS.
PIN (12) IS INTERNALLY CONNECTED
TO BACKSIDE OF CHIP.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
3
TLV2322, TLV2322Y, TLV2324, TLV2324Y
LinCMOS LOW-VOLTAGE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS187 – FEBRUARY 1997
equivalent schematic (each amplifier)
VDD
P3
P4
R6
P1
IN –
P2
N5
R2
R1
IN +
R5
P5
C1
N3
P6
OUT
N4
N1
R3
D1
N2
N6
R4
N7
D2
R7
GND
ACTUAL DEVICE COMPONENT COUNT†
COMPONENT
TLV2342
TLV2344
Transistors
54
108
Resistors
14
28
Diodes
4
8
Capacitors
2
4
† Includes both amplifiers and all ESD, bias, and trim
circuitry.
4
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
TLV2322, TLV2322Y, TLV2324, TLV2324Y
LinCMOS LOW-VOLTAGE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS187 – FEBRUARY 1997
absolute maximum ratings over operating free-air temperature (unless otherwise noted)†
Supply voltage, VDD (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 V
Differential input voltage, VID (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDD ±
Input voltage range, VI (any input) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 0.3 V to VDD
Input current, II . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 5 mA
Output current, IO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 30 mA
Duration of short-circuit current at (or below) TA = 25°C (see Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . unlimited
Continuous total dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Dissipation Rating Table
Operating free-air temperature range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 40°C to 85°C
Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 65°C to 150°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum rated conditions for extended periods may affect device reliability.
NOTES: 1. All voltage values, except differential voltages, are with respect to network ground.
2. Differential voltages are at the noninverting input with respect to the inverting input.
3. The output may be shorted to either supply. Temperature and /or supply voltages must be limited to ensure that the maximum
dissipation rating is not exceeded (see application section).
DISSIPATION RATING TABLE
PACKAGE
TA ≤ 25°C
POWER RATING
DERATING FACTOR
ABOVE TA = 25°C
TA = 85°C
POWER RATING
D–8
725 mW
5.8 mW/°C
377 mW
D–14
950 mW
7.6 mW/°C
494 mW
N
1575 mW
12.6 mW/°C
819 mW
P
1000 mW
8.0 mW/°C
520 mW
PW–8
525 mW
4.2 mW/°C
273 mW
PW–14
700 mW
5.6 mW/°C
364 mW
recommended operating conditions
Supply voltage, VDD
Common mode input voltage,
Common-mode
voltage VIC
VDD = 3 V
VDD = 5 V
Operating free-air temperature, TA
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
MIN
MAX
2
8
– 0.2
1.8
– 0.2
3.8
– 40
85
UNIT
V
V
°C
5
TLV2322, TLV2322Y, TLV2324, TLV2324Y
LinCMOS LOW-VOLTAGE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS187 – FEBRUARY 1997
TLV2322 electrical characteristics at specified free-air temperature
TLV2322
PARAMETER
VIO
Input offset voltage
TEST CONDITIONS
TA†
VDD = 3 V
MIN
TYP
MAX
VDD = 5 V
MIN
TYP
MAX
VO = 1 V,
VIC = 1 V,,
RS = 50 Ω,
RL = 1 MΩ
25°C
1.1
1.1
11
Average temperature coefficient
of input offset voltage
IIO
Input offset current (see Note 4)
VO = 1 V,,
VIC = 1 V
25°C
0.1
85°C
22
IIB
Input bias current (see Note 4)
VO = 1 V,,
VIC = 1 V
25°C
0.6
85°C
175
25°C to
85°C
VIC = 1 V,
VID = 100 mV,
mV
IOH = – 1 mA
High level output voltage
High-level
VOL
Low level output voltage
Low-level
AVD
Large-signal
g
g
differential voltage
g
amplification
VIC = 1 V,
RL = 1 MΩ,
MΩ
See Note 6
CMRR
Common mode rejection ratio
Common-mode
VO = 1 V,
VIC = VICR min,
min
RS = 50 Ω
VIC = 1 V,
VID = – 100 mV
mV,
IOL = 1 mA
11
1
25°C
– 0.2
to
2
Full range
– 0.2
to
1.8
25°C
1.75
Full range
1.7
Common-mode input voltage
g
range (see Note 5)
VOH
µV/°C
1.1
0.1
1000
24
1000
0.6
2000
– 0.3
to
2.3
200
– 0.2
to
4
2000
– 0.3
to
4.2
3.2
pA
V
– 0.2
to
3.8
1.9
pA
V
3.8
V
25°C
3
115
150
95
150
mV
Full range
190
25°C
50
Full range
50
25°C
65
Full range
60
400
190
50
520
V/mV
50
88
65
94
dB
Supply-voltage
y
g rejection
j
ratio
(∆VDD /∆VIO)
VIC = 1 V,
VO = 1 V,
V
RS = 50 Ω
25°C
70
kSVR
Full range
65
IDD
Supply current
VO = 1 V,, VIC = 1 V,,
No load
Full range
60
86
70
86
dB
25°C
65
12
34
20
54
† Full range is – 40°C to 85°C.
NOTES: 4. The typical values of input bias current and input offset current below 5 pA are determined mathematically.
5. This range also applies to each input individually.
6. At VDD = 5 V, VO(PP) = 0.25 V to 2 V; at VDD = 3 V, VO = 0.5 V to 1.5
6
9
mV
Full range
αVIO
VICR
9
UNIT
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
34
54
µA
TLV2322, TLV2322Y, TLV2324, TLV2324Y
LinCMOS LOW-VOLTAGE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS187 – FEBRUARY 1997
TLV2322 operating characteristics at specified free-air temperature, VDD = 3 V
PARAMETER
SR
Slew rate at unity gain
TEST CONDITIONS
VIC = 1 V,
RL = 1 MΩ,
MΩ
S Figure
See
Fi
35
VI(PP) = 1 V,
CL = 20 pF
F,
TA
TLV2322
MIN
TYP
25°C
0.02
85°C
0 02
0.02
25°C
68
MAX
UNIT
V/µs
Vn
Equivalent input noise voltage
f = 1 kHz,
See Figure 36
RS = 20 Ω,
BOM
Maximum output
output-swing
swing bandwidth
VO = VOH,
RL = 1 MΩ,
CL = 20 pF,,
See Figure 35
25°C
2.5
85°C
2
B1
Unity gain bandwidth
Unity-gain
VI = 10 mV,,
RL = 1 MΩ,
CL = 20 pF,,
See Figure 37
25°C
27
85°C
21
f B1,
f=
RL = 1 MΩ,
39°
Phase margin
VI = 10 mV,
CL = 20 pF,
See Figure 37
– 40°C
φm
25°C
34°
85°C
28°
nV/√Hz
kHz
kHz
TLV2322 operating characteristics at specified free-air temperature, VDD = 5 V
PARAMETER
SR
Slew rate at unity gain
TEST CONDITIONS
VIC = 1 V
V,
RL = 1 MΩ,,
CL = 20 pF,
S Figure
See
Fi
35
VI(PP) = 1 V
RS = 20 Ω,
5V
VI(PP) = 2
2.5
TA
TLV2322
MIN
TYP
25°C
0.03
85°C
0.03
25°C
0.03
85°C
0.02
25°C
68
Vn
Equivalent input noise voltage
f = 1 kHz,
See Figure 36
BOM
swing bandwidth
Maximum output
output-swing
VO = VOH,
RL = 1 MΩ,
CL = 20 pF,,
See Figure 35
25°C
5
85°C
4
B1
Unity gain bandwidth
Unity-gain
VI = 10 mV,,
RL = 1 MΩ,
CL = 20 pF,,
See Figure 37
25°C
85
85°C
55
f = B1,
RL = 1 MΩ,
38°
Phase margin
VI = 10 mV,
CL = 20 pF,
See Figure 37
– 40°C
φm
25°C
34°
85°C
28°
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
MAX
UNIT
V/µs
nV/√Hz
kHz
kHz
7
TLV2322, TLV2322Y, TLV2324, TLV2324Y
LinCMOS LOW-VOLTAGE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS187 – FEBRUARY 1997
TLV2324I electrical characteristics at specified free-air temperature
TLV2324I
PARAMETER
VIO
Input offset voltage
TEST CONDITIONS
VO = 1 V,
VIC = 1 V,,
RS = 50 Ω,
RL = 1 MΩ,
TA†
VDD = 3 V
MIN
TYP
MAX
VDD = 5 V
MIN
TYP
MAX
25°C
11
1.1
11
1.1
12
Average
g temperature coefficient
of input offset voltage
25°C to
85°C
IIO
Input offset current (see Note 4)
VO = 1 V,,
VIC = 1 V
25°C
0.1
85°C
22
IIB
Input bias current (see Note 4)
VO = 1 V,,
VIC = 1 V
25°C
0.6
85°C
175
VIC = 1 V
V,
VID = 100 mV,
mV
IOH = – 1 mA
High level output voltage
High-level
VOL
Low level output voltage
Low-level
AVD
g
g
Large-signal
differential
voltage amplification
VIC = 1 V
V,
RL = 1 MΩ,
MΩ
See Note 6
CMRR
Common mode rejection ratio
Common-mode
V
VO = 1 V,
VIC
min
C = VICR
C min,
RS = 50 Ω
VIC = 1 V
V,
VID = –100
mV,
100 mV
IOL = 1 mA
kSVR
S
ly lt g rejection
j ti ratio
ti
Supply-voltage
(∆VDD /∆VIO)
VIC = 1 V,
V VO = 1 V,
V
RS = 50 Ω
IDD
Supply
Su
ly current
VO = 1 V
V, VIC = 1 V
V,
No load
12
1
25°C
– 0.2
to
2
Full range
g
– 0.2
to
1.8
25°C
1 75
1.75
Full range
1.7
Common-mode input
voltage range (see Note 5)
VOH
µV/°C
11
1.1
0.1
1000
24
2000
200
1000
0.6
– 0.3
to
2.3
– 0.2
to
4
2000
– 0.3
to
4.2
19
1.9
32
3.2
pA
pA
V
– 0.2
to
3.8
V
38
3.8
V
25°C
3
115
150
95
150
mV
Full range
190
25°C
50
Full range
50
25°C
65
Full range
60
25°C
70
Full range
65
400
190
50
520
V/mV
50
88
65
94
dB
25°C
Full range
60
86
70
86
dB
65
24
68
39
108
† Full range is – 40°C to 85°C.
NOTES: 4. The typical values of input bias current and input offset current below 5 pA are determined mathematically.
5. This range also applies to each input individually.
6. At VDD = 5 V, VO(PP) = 0.25 V to 2 V; at VDD = 3 V, VO = 0.5 V to 1.5 V.
8
10
mV
Full range
αVIO
VICR
10
UNIT
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
68
108
µA
TLV2322, TLV2322Y, TLV2324, TLV2324Y
LinCMOS LOW-VOLTAGE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS187 – FEBRUARY 1997
TLV2324I operating characteristics at specified free-air temperature, VDD = 3 V
PARAMETER
SR
Slew rate at unity gain
TEST CONDITIONS
VIC = 1 V
V,
RL = 1 MΩ,
MΩ
S Figure
See
Fi
35
VI(PP) = 1 V
V,
CL = 20 pF,
pF
TA
TLV2324I
MIN
TYP
25°C
0 02
0.02
85°C
0 02
0.02
25°C
68
MAX
UNIT
V/µs
Vn
Equivalent input noise voltage
f = 1 kHz,,
See Figure 36
RS = 20 Ω,,
BOM
Maximum output
output-swing
swing bandwidth
VO = VOH,
RL = 1 MΩ,
CL = 20 pF,,
See Figure 35
25°C
2.5
85°C
2
B1
Unity gain bandwidth
Unity-gain
VI = 10 mV,,
RL = 1 MΩ,
CL = 20 pF,,
See Figure 37
25°C
27
85°C
21
f = B1,
RL = 1 MΩ,
39°
Phase margin
VI = 10 mV,
CL = 20 pF,
See Figure 37
– 40°C
φm
25°C
34°
85°C
28°
nV√/Hz
kHz
kHz
TLV2324I operating characteristics at specified free-air temperature, VDD = 5 V
PARAMETER
SR
Slew rate at unity gain
TEST CONDITIONS
VIC = 1 V
V,
RL = 1 MΩ,,
CL = 20 pF,
S Figure
See
Fi
35
VI(PP)= 1 V
RS = 20 Ω,,
5V
VI(PP) = 2
2.5
TA
TLV2324I
MIN
TYP
25°C
0.03
85°C
0.03
25°C
0.03
85°C
0.02
25°C
68
Vn
Equivalent input noise voltage
f = 1 kHz,,
See Figure 36
BOM
swing bandwidth
Maximum output
output-swing
VO = VOH,
RL = 1 MΩ,
CL = 20 pF,,
See Figure 35
25°C
5
85°C
4
B1
Unity gain bandwidth
Unity-gain
VI = 10 mV,,
RL = 1 MΩ,
CL = 20 pF,,
See Figure 37
25°C
85
85°C
55
f = B1,
RL = 1 MΩ,
38°
Phase margin
VI = 10 mV,
CL = 20 pF,
See Figure 37
– 40°C
φm
25°C
34°
85°C
28°
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
MAX
UNIT
V/µs
nV/√Hz
kHz
kHz
9
TLV2322, TLV2322Y, TLV2324, TLV2324Y
LinCMOS LOW-VOLTAGE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS187 – FEBRUARY 1997
TLV2322Y electrical characteristics, TA = 25°C
TLV2322Y
PARAMETER
VIO
Input offset voltage
IIO
IIB
Input offset current (see Note 4)
Input bias current (see Note 4)
TEST CONDITIONS
VO = 1 V,
RS = 50 Ω,
VIC = 1 V,
RL = 1 MΩ
VO = 1 V,
VO = 1 V,
VIC = 1 V
VIC = 1 V
VDD = 3 V
MIN
TYP
MAX
VDD = 5 V
TYP
MAX
UNIT
MIN
1.1
1.1
mV
0.1
0.1
pA
0.6
0.6
pA
– 0.3
to
2.3
– 0.3
to
4.2
V
VICR
Common-mode input voltage
range (see Note 5)
VOH
High-level output voltage
VIC = 1 V,
IOH = – 1 mA
VID = – 100 mV,
1.9
3.8
V
VOL
Low-level output voltage
VIC = 1 V,
IOL = 1 mA
VID = 100 mV,
115
95
mV
AVD
Large-signal differential voltage
amplification
VIC = 1 V,
See Note 6
RL = 1 MΩ,
400
520
V/mV
CMRR Common-mode rejection ratio
VO = 1 V,
RS = 50 Ω
VIC = VICR min,
88
94
dB
kSVR
Supply-voltage rejection ratio
(∆VDD / ∆VID)
VO = 1 V,
RS = 50 Ω
VIC = 1 V,
86
86
dB
IDD
Supply current
VO = 1 V,
No load
VIC = 1 V,
12
20
µA
NOTES: 4. The typical values of input bias current offset current below 5 pA are determined mathematically.
5. This range also applies to each input individually.
6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 3 V, VO = 0.5 V to 1.5 V.
10
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TLV2322, TLV2322Y, TLV2324, TLV2324Y
LinCMOS LOW-VOLTAGE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS187 – FEBRUARY 1997
TLV2322Y electrical characteristics,TA = 25°C
TLV2324Y
PARAMETER
VIO
Input offset voltage
IIO
IIB
Input offset current (see Note 4)
Input bias current (see Note 4)
TEST CONDITIONS
VO = 1 V,
RS = 50 Ω,
VIC = 1 V,
RL = 1 M Ω
VO = 1 V,
VO = 1 V,
VIC = 1 V
VIC = 1 V
VDD = 3 V
MIN
TYP
MAX
VDD = 5 V
TYP
MAX
UNIT
MIN
1.1
1.1
mV
0.1
0.1
pA
0.6
0.6
pA
– 0.3
to
2.3
– 0.3
to
4.2
V
VICR
Common-mode input voltage
range (see Note 5)
VOH
High-level output voltage
VIC = 1 V,
IOH = – 1 mA
VID = 100 mV,
1.9
3.8
V
VOL
Low-level output voltage
VIC = 1 V,
IOL = 1 mA
VID = 100 mV,
115
95
mV
AVD
Large-signal differential voltage
amplification
VIC = 1 V,
See Note 6
RL = 1 MΩ,
400
520
V/mV
CMRR
Common-mode rejection ratio
VO = 1 V,
RS = 50 Ω
VIC = VICRmin,
88
94
dB
kSVR
Supply-voltage rejection ratio
(∆VDD / ∆VID)
VO = 1 V,
RS = 50 Ω
VIC = 1 V,
86
86
dB
IDD
Supply current
VO = 1 V,
No load
VIC = 1 V,
24
39
µA
NOTES: 4. The typical values of input bias current offset current below 5 pA are determined mathematically.
5. This range also applies to each input individually.
6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 3 V, VO = 0.5 V to 1.5 V.
POST OFFICE BOX 655303
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11
TLV2322, TLV2322Y, TLV2324, TLV2324Y
LinCMOS LOW-VOLTAGE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS187 – FEBRUARY 1997
TYPICAL CHARACTERISTICS
Table of Graphs
FIGURE
VIO
αVIO
Input offset voltage
Distribution
1–4
Input offset voltage temperature coefficient
Distribution
5–8
IIB
IIO
Input bias current
vs Free-air temperature
Input offset current
vs Free-air temperature
9
VIC
Common-mode input voltage
vs Supply voltage
10
VOH
High-level output voltage
vs High-level output current
vs Supply voltage
vs Free-air temperature
11
12
13
VOL
Low-level output voltage
vs Common-mode input voltage
vs Free-air temperature
vs Differential input voltage
vs Low-level output current
14
15, 16
17
18
AVD
Large-signal differential voltage amplification
vs Supply voltage
vs Free-air temperature
vs Frequency
19
20
21, 22
IDD
Supply current
vs Supply voltage
vs Free-air temperature
23
24, 25
SR
Slew rate
vs Supply voltage
vs Free-air temperature
26
27
VO(PP)
Maximum peak-to-peak output voltage
vs Frequency
28
B1
Unity-gain bandwidth
vs Supply voltage
vs Free-air temperature
29
30
φm
Phase margin
vs Supply voltage
vs Free-air temperature
vs Load capacitance
31
32
33
Phase shift
vs Frequency
21, 22
Equivalent input noise voltage
vs Frequency
34
Vn
12
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TLV2322, TLV2322Y, TLV2324, TLV2324Y
LinCMOS LOW-VOLTAGE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS187 – FEBRUARY 1997
TYPICAL CHARACTERISTICS
DISTRIBUTION OF TLV2322
INPUT OFFSET VOLTAGE
DISTRIBUTION OF TLV2322
INPUT OFFSET VOLTAGE
50
VDD = 3 V
TA = 25°C
P Package
60
Percentage of Units – %
Percentage of Units – %
40
70
30
20
VDD = 5 V
TA = 25°C
P Package
50
40
30
20
10
10
0
–5
–4 –3
–2
–1
0
1
2
3
4
0
–5
5
–4 –3
VIO – Input Offset Voltage – mV
–2
–1
0
1
2
3
4
5
4
5
VIO – Input Offset Voltage – mV
Figure 1
Figure 2
DISTRIBUTION OF TLV2324
INPUT OFFSET VOLTAGE
DISTRIBUTION OF TLV2324
INPUT OFFSET VOLTAGE
50
70
VDD = 3 V
TA = 25°C
N Package
60
VDD = 5 V
TA = 25°C
N Package
Percentage of Units – %
Percentage of Units – %
40
30
20
50
40
30
20
10
10
0
–5 –4 –3 –2 –1
0
1
2
3
4
5
0
–5 –4 –3 –2 –1
0
1
2
3
VIO – Input Offset Voltage – mV
VIO – Input Offset Voltage – mV
Figure 3
Figure 4
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TLV2322, TLV2322Y, TLV2324, TLV2324Y
LinCMOS LOW-VOLTAGE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS187 – FEBRUARY 1997
TYPICAL CHARACTERISTICS
DISTRIBUTION OF TLV2322
INPUT OFFSET VOLTAGE
TEMPERATURE COEFFICIENT
DISTRIBUTION OF TLV2322
INPUT OFFSET VOLTAGE
TEMPERATURE COEFFICIENT
70
50
VDD = 3 V
TA = 25°C to 85°C
P Package
VDD = 5 V
TA = 25°C to 85°C
P Package
Outliers:
(1) 19.2 mV/°C
(1) 12.1 mV/°C
60
Percentage of Units – %
Percentage of Units – %
40
30
20
50
40
30
20
10
10
0
–10 – 8
–6 –4
–2
0
2
4
6
8
0
–10 – 8
10
–6 –4
Figure 5
0
2
4
6
8
10
Figure 6
DISTRIBUTION OF TLV2324
INPUT OFFSET VOLTAGE
TEMPERATURE COEFFICIENT
DISTRIBUTION OF TLV2324
INPUT OFFSET VOLTAGE
TEMPERATURE COEFFICIENT
70
50
VDD = 3 V
TA = 25°C to 85°C
N Package
60
Percentage of Units – %
40
Percentage of Units – %
–2
αVIO – Temperature Coefficient – µV/°C
αVIO – Temperature Coefficient – µV/°C
30
20
VDD = 5 V
TA = 25°C to 85°C
N Package Outliers:
(1) 19.2 mV/°C
(1) 12.1 mV/°C
50
40
30
20
10
10
0
– 10 – 8 – 6 – 4 – 2
0
2
4
6
8
10
αVIO – Temperature Coefficient – µV/°C
0
– 10 – 8 – 6 – 4 – 2
Figure 8
POST OFFICE BOX 655303
2
4
6
8
αVIO – Temperature Coefficient – µV/°C
Figure 7
14
0
• DALLAS, TEXAS 75265
10
TLV2322, TLV2322Y, TLV2324, TLV2324Y
LinCMOS LOW-VOLTAGE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS187 – FEBRUARY 1997
TYPICAL CHARACTERISTICS
COMMON-MODE INPUT VOLTAGE
vs
SUPPLY VOLTAGE
104
103
8
VDD = 3 V
VIC = 1 V
See Note A
TA = 25°C
Positive Limit
102
V
VIC
IC – Common-Mode Input Voltage – V
IIIB
I IO – Input Bias and Offset Currents – pA
IB and IIO
INPUT BIAS CURRENT AND INPUT OFFSET
CURRENT
vs
FREE-AIR TEMPERATURE
IIB
101
IIO
1
0.1
25
45
65
85
105
6
4
2
0
125
0
TA – Free-Air Temperature – °C
NOTE A: The typical values of input bias current and input offset
current below 5 pA were determined mathematically.
2
4
6
VDD – Supply Voltage – V
Figure 9
Figure 10
HIGH-LEVEL OUTPUT VOLTAGE
vs
SUPPLY VOLTAGE
HIGH-LEVEL OUTPUT VOLTAGE
vs
HIGH-LEVEL OUTPUT CURRENT
8
5
VIC = 1 V
VID = 100 mV
TA = 25°C
4
VV0H
OH – High-Level Output Voltage – V
VV0H
OH – High-Level Output Voltage – V
8
VDD = 5 V
3
VDD = 3 V
2
1
VIC = 1 V
VID = 100 mV
RL = 1 MΩ
TA = 25°C
6
4
2
0
0
0
–2
–4
–6
–8
0
IOH – High-Level Output Current – mA
Figure 11
2
4
6
VDD – Supply Voltage – V
8
Figure 12
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TLV2322, TLV2322Y, TLV2324, TLV2324Y
LinCMOS LOW-VOLTAGE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS187 – FEBRUARY 1997
TYPICAL CHARACTERISTICS
LOW-LEVEL OUTPUT VOLTAGE
vs
COMMON-MODE INPUT VOLTAGE
HIGH-LEVEL OUTPUT VOLTAGE
vs
FREE-AIR TEMPERATURE
700
2.4
VDD = 3 V
VIC = 1 V
VID = 100 mV
1.8
1.2
0.6
0
– 75
VDD = 5 V
IOL = 5 mA
TA = 25°C
650
VOL
V
OL – Low-Level Output Voltage – mV
VV0H
OH – High-Level Output Voltage – V
3
IOH = – 500 µA
IOH = – 1 mA
IOH = – 2 mA
IOH = – 3 mA
IOH = – 4 mA
600
550
VID = –100 mV
500
450
400
VID = –1 V
350
300
– 50
– 25
0
25
50
75 100
TA – Free-Air Temperature – °C
125
0
0.5
1
1.5
2
2.5
3
3.5
VIC – Common-Mode Input Voltage – V
Figure 13
Figure 14
LOW-LEVEL OUTPUT VOLTAGE
vs
FREE-AIR TEMPERATURE
LOW-LEVEL OUTPUT VOLTAGE
vs
FREE-AIR TEMPERATURE
900
170
VDD = 3 V
VIC = 1 V
VID = – 100 mV
IOL = 1 mA
VOL
V
OL – Low-Level Output Voltage – mV
VOL
V
OL – Low-Level Output Voltage – mV
200
185
155
140
125
110
95
80
65
50
– 75
– 50
– 25
0
25
50
75 100
TA – Free-Air Temperature – °C
125
800
700
VDD = 5 V
VIC = 0.5 V
VID = – 1 V
IOL = 5 mA
600
500
400
300
200
100
0
– 75
– 50
Figure 15
16
4
– 25
0
25
50
75 100
TA – Free-Air Temperature – °C
Figure 16
POST OFFICE BOX 655303
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125
TLV2322, TLV2322Y, TLV2324, TLV2324Y
LinCMOS LOW-VOLTAGE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS187 – FEBRUARY 1997
TYPICAL CHARACTERISTICS
LOW-LEVEL OUTPUT VOLTAGE
vs
DIFFERENTIAL INPUT VOLTAGE
LOW-LEVEL OUTPUT VOLTAGE
vs
LOW-LEVEL OUTPUT CURRENT
1
VDD = 5 V
VIC = |VID / 2|
IOL = 5 mA
TA = 25°C
700
600
VIC = 1 V
VID = – 1 V
TA = 25°C
0.9
VOL
V
OL – Low-Level Output Voltage – mV
VOL
V
OL – Low-Level Output Voltage – mV
800
500
400
300
200
100
0
0.8
VDD = 5 V
0.7
0.6
0.5
0.4
VDD = 3 V
0.3
0.2
0.1
0
0
–1
–2
–3
–4
–5
–6
–7
VID – Differential Input Voltage – V
–8
0
1
7
2
3
4
5
6
IOL – Low-Level Output Current – mA
Figure 17
Figure 18
LARGE-SIGNAL
DIFFERENTIAL VOLTAGE AMPLIFICATION
vs
FREE-AIR TEMPERATURE
LARGE-SIGNAL
DIFFERENTIAL VOLTAGE AMPLIFICATION
vs
SUPPLY VOLTAGE
2000
2000
RL = 1 MΩ
RL = 1 MΩ
1800
A VD – Large-Signal Differential Voltage
Amplification – V/mV
A VD – Large-Signal Differential Voltage
Amplification – V/mV
8
1600
1400
TA = – 40°C
1200
1000
800
600
TA = 25°C
400
200
1800
1600
1400
1200
1000
800
VDD = 5 V
600
VDD = 3 V
400
200
TA = 85°C
0
0
2
4
6
8
0
– 75
– 50
– 25
0
25
50
75
100
125
TA – Free-Air Temperature – °C
VDD – Supply Voltage – V
Figure 19
Figure 20
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TLV2322, TLV2322Y, TLV2324, TLV2324Y
LinCMOS LOW-VOLTAGE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS187 – FEBRUARY 1997
TYPICAL CHARACTERISTICS
LARGE-SIGNAL DIFFERENTIAL VOLTAGE
AMPLIFICATION AND PHASE SHIFT
vs
FREQUENCY
10 7
10 6
10 5
– 30°
0°
10 4
30°
AVD
10 3
60°
10 2
Phase Shift
AVD – Large-Signal Differential
Voltage Amplification
– 60°
VDD = 3 V
RL = 1 MΩ
CL = 20 pF
TA = 25°C
90°
Phase Shift
10 1
120°
1
150°
0.1
1
10
100
1k
10 k
100 k
180°
1M
f – Frequency – Hz
Figure 21
LARGE-SIGNAL DIFFERENTIAL VOLTAGE
AMPLIFICATION AND PHASE SHIFT
vs
FREQUENCY
10 7
VDD = 5 V
RL = 1 MΩ
CL = 20 pF
TA = 25°C
10 5
0°
10 4
30°
AVD
10 3
60°
10 2
90°
Phase Shift
10 1
120°
1
150°
0.1
1
10
100
1k
10 k
100 k
f – Frequency – Hz
Figure 22
18
– 30°
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
180°
1M
Phase Shift
AVD – Large-Signal Differential
Voltage Amplification
10 6
– 60°
TLV2322, TLV2322Y, TLV2324, TLV2324Y
LinCMOS LOW-VOLTAGE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS187 – FEBRUARY 1997
TYPICAL CHARACTERISTICS
TLV2322
SUPPLY CURRENT
vs
FREE-AIR TEMPERATURE
SUPPLY CURRENT
vs
SUPPLY VOLTAGE
45
40
VIC = 1 V
VO = 1 V
No Load
30
35
A
mA
IIDD
DD – Supply Current – µ
A
mA
IIDD
DD – Supply Current – µ
35
VIC = 1 V
VO = 1 V
No Load
30
TA = – 40°C
TA = 25°C
25
20
15
TA = 85°C
25
VDD = 5 V
20
15
VDD = 3 V
10
10
5
5
0
0
2
4
6
0
– 75
8
– 50
VDD – Supply Voltage – V
– 25
0
25
50
75 100
TA – Free-Air Temperature – °C
Figure 23
Figure 24
TLV2324
SUPPLY CURRENT
vs
FREE-AIR TEMPERATURE
SLEW RATE
vs
SUPPLY VOLTAGE
0.07
120
VIC = 1 V
VO = 1 V
No Load
80
60
VDD = 5 V
40
20
0
– 75
VIC = 1 V
VI(PP) = 1 V
AV = 1
RL = 1 MΩ
CL = 20 pF
TA = 25°C
0.06
SR – Slew Rate – V/us
V/µ s
µA
IIDD
DD – Supply Current – mA
100
125
VDD = 3 V
0.05
0.04
0.03
0.02
0.01
0
– 50
– 25
0
25
50
75
100
125
0
TA – Free-Air Temperature – °C
2
4
6
8
VDD – Supply Voltage – V
Figure 25
Figure 26
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TLV2322, TLV2322Y, TLV2324, TLV2324Y
LinCMOS LOW-VOLTAGE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS187 – FEBRUARY 1997
TYPICAL CHARACTERISTICS
MAXIMUM PEAK-TO-PEAK OUTPUT VOLTAGE
vs
FREQUENCY
0.07
VIC = 1 V
VI(PP) = 1 V
AV = 1
RL = 1 MΩ
CL = 20 pF
SR – Slew Rate – V/us
V/µ s
0.06
0.05
0.04
VDD = 5 V
0.03
VDD = 3 V
0.02
0.01
0
– 75
– 50
– 25
0
25
50
75 100
TA – Free-Air Temperature – °C
125
V O(PP) – Maximum Peak-to-Peak Output Voltage – V
SLEW RATE
vs
FREE-AIR TEMPERATURE
5
VDD = 5 V
4
TA = – 40°C
TA = 25°C
3
VDD = 3 V
2
1
TA = 85°C
RL = 1 MΩ
0
0.1
1
Figure 27
UNITY-GAIN BANDWIDTH
vs
FREE-AIR TEMPERATURE
120
140
VI = 10 mV
RL = 1 MΩ
CL = 20 pF
TA = 25°C
100
VI = 10 mV
RL = 1 MΩ
CL = 20 pF
125
B
B1
1 – Unity-Gain Bandwidth – kHz
110
B1 – Unity-Gain Bandwidth – MHz
B1
100
Figure 28
UNITY-GAIN BANDWIDTH
vs
SUPPLY VOLTAGE
90
80
70
60
50
40
110
95
VDD = 5 V
80
65
50
VDD = 3 V
35
30
20
0
1
2
3
4
5
6
7
8
20
– 75
– 50
VDD – Supply Voltage – V
Figure 29
20
10
f – Frequency – kHz
– 25
0
25
50
75 100
TA – Free-Air Temperature – °C
Figure 30
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125
TLV2322, TLV2322Y, TLV2324, TLV2324Y
LinCMOS LOW-VOLTAGE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS187 – FEBRUARY 1997
TYPICAL CHARACTERISTICS
PHASE MARGIN
vs
SUPPLY VOLTAGE
PHASE MARGIN
vs
FREE-AIR TEMPERATURE
42°
40°
VDD = 3 V
38°
36°
38°
φom
m – Phase Margin
φom
m – Phase Margin
40°
VI = 10 mV
RL = 1 MΩ
CL = 20 pF
TA = 25°C
36°
34°
VDD = 5 V
34°
32°
30°
28°
26°
24°
32°
22°
30°
0
2
4
6
20°
– 75
8
VI = 10 mV
RL = 1 MΩ
CL = 20 pF
– 50
VDD – Supply Voltage – V
Figure 31
EQUIVALENT INPUT NOISE VOLTAGE
vs
FREQUENCY
Vn
nV HzHz
Vn – Equivalent Input Noise Voltage – nV/
40°
38°
φom
m – Phase Margin
VDD = 3 V
34°
32°
VDD = 5 V
30°
28°
26°
24°
VI = 10 mV
RL = 1 MΩ
TA = 25°C
22°
125
Figure 32
PHASE MARGIN
vs
LOAD CAPACITANCE
36°
– 25
0
25
50
75 100
TA – Free-Air Temperature – °C
20°
200
VDD = 3 V, 5 V
RS = 20 Ω
TA = 25°C
175
150
125
100
75
50
25
0
0
10
20
30
40
50
60
70
80
90 100
1
10
100
1000
f – Frequency – Hz
CL – Load Capacitance – pF
Figure 33
Figure 34
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TLV2322, TLV2322Y, TLV2324, TLV2324Y
LinCMOS LOW-VOLTAGE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS187 – FEBRUARY 1997
PARAMETER MEASUREMENT INFORMATION
single-supply versus split-supply test circuits
Because the TLV232x is optimized for single-supply operation, circuit configurations used for the various tests
often present some inconvenience since the input signal, in many cases, must be offset from ground. This
inconvenience can be avoided by testing the device with split supplies and the output load tied to the negative
rail. A comparison of single-supply versus split-supply test circuits is shown below. The use of either circuit gives
the same result.
VDD +
VDD
–
VI
–
VO
+
CL
VO
+
VI
CL
RL
RL
VDD –
(b) SPLIT SUPPLY
(a) SINGLE SUPPLY
Figure 35. Unity-Gain Amplifier
2 kΩ
2 kΩ
VDD
VDD +
20 Ω
–
1/2 VDD
–
VO
+
+
VO
20 Ω
20 Ω
20 Ω
VDD –
(b) SPLIT SUPPLY
(a) SINGLE SUPPLY
Figure 36. Noise-Test Circuits
10 kΩ
10 kΩ
VDD
VDD +
100 Ω
100 Ω
VI
–
1/2 VDD
+
VO
VI
–
+
CL
CL
VDD –
(a) SINGLE SUPPLY
(b) SPLIT SUPPLY
Figure 37. Gain-of-100 Inverting Amplifier
22
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TLV2322, TLV2322Y, TLV2324, TLV2324Y
LinCMOS LOW-VOLTAGE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS187 – FEBRUARY 1997
PARAMETER MEASUREMENT INFORMATION
input bias current
Because of the high input impedance of the TLV232x operational amplifier, attempts to measure the input bias
current can result in erroneous readings. The bias current at normal ambient temperature is typically less than
1 pA, a value that is easily exceeded by leakages on the test socket. Two suggestions are offered to avoid
erroneous measurements:
•
•
Isolate the device from other potential leakage sources. Use a grounded shield around and between the
device inputs (see Figure 38). Leakages that would otherwise flow to the inputs are shunted away.
Compensate for the leakage of the test socket by actually performing an input bias current test (using a
picoammeter) with no device in the test socket. The actual input bias current can then be calculated by
subtracting the open-socket leakage readings from the readings obtained with a device in the test
socket.
Many automatic testers as well as some bench-top operational amplifier testers use the servo-loop
technique with a resistor in series with the device input to measure the input bias current (the voltage
drop across the series resistor is measured and the bias current is calculated). This method requires
that a device be inserted into a test socket to obtain a correct reading; therefore, an open-socket reading
is not feasible using this method.
8
5
V = VIC
1
4
Figure 38. Isolation Metal Around Device Inputs
(P package)
low-level output voltage
To obtain low-level supply-voltage operation, some compromise is necessary in the input stage. This
compromise results in the device low-level output voltage being dependent on both the common-mode input
voltage level as well as the differential input voltage level. When attempting to correlate low-level output
readings with those quoted in the electrical specifications, these two conditions should be observed. If
conditions other than these are to be used, please refer to the Typical Characteristics section of this data sheet.
input offset voltage temperature coefficient
Erroneous readings often result from attempts to measure the temperature coefficient of input offset voltage.
This parameter is actually a calculation using input offset voltage measurements obtained at two different
temperatures. When one (or both) of the temperatures is below freezing, moisture can collect on both the device
and the test socket. This moisture results in leakage and contact resistance that can cause erroneous input
offset voltage readings. The isolation techniques previously mentioned have no effect on the leakage since the
moisture also covers the isolation metal itself, thereby rendering it useless. These measurements should be
performed at temperatures above freezing to minimize error.
full-power response
Full-power response, the frequency above which the operational amplifier slew rate limits the output voltage
swing, is often specified two ways: full-linear response and full-peak response. The full-linear response is
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TLV2322, TLV2322Y, TLV2324, TLV2324Y
LinCMOS LOW-VOLTAGE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS187 – FEBRUARY 1997
PARAMETER MEASUREMENT INFORMATION
generally measured by monitoring the distortion level of the output while increasing the frequency of a sinusoidal
input signal until the maximum frequency is found above which the output contains significant distortion. The
full-peak response is defined as the maximum output frequency, without regard to distortion, above which full
peak-to-peak output swing cannot be maintained.
Because there is no industry-wide accepted value for significant distortion, the full-peak response is specified
in this data sheet and is measured using the circuit of Figure 35. The initial setup involves the use of a sinusoidal
input to determine the maximum peak-to-peak output of the device (the amplitude of the sinusoidal wave is
increased until clipping occurs). The sinusoidal wave is then replaced with a square wave of the same
amplitude. The frequency is then increased until the maximum peak-to-peak output can no longer be maintained
(Figure 39). A square wave is used to allow a more accurate determination of the point at which the maximum
peak-to-peak output is reached.
(a) f = 100 Hz
(d) BOM > f > 100 Hz
(d) f = BOM
(d) f > BOM
Figure 39. Full-Power-Response Output Signal
test time
Inadequate test time is a frequent problem, especially when testing CMOS devices in a high-volume,
short-test-time environment. Internal capacitances are inherently higher in CMOS than in bipolar and BiFET
devices and require longer test times than their bipolar and BiFET counterparts. The problem becomes more
pronounced with reduced supply levels and lower temperatures.
APPLICATION INFORMATION
single-supply operation
VDD
While the TLV232x performs well using dualpower supplies (also called balanced or split
supplies), the design is optimized for singlesupply operation. This includes an input commonmode voltage range that encompasses ground as
well as an output voltage range that pulls down to
ground. The supply voltage range extends down
to 2 V, thus allowing operation with supply levels
commonly available for TTL and HCMOS.
R2
R1
VI
TLE2426
–
ǒ Ǔ
VO
+
V
O
+
V
–V
DD I
2
R2
R1
) VDD
2
Many single-supply applications require that a
voltage be applied to one input to establish a
reference level that is above ground. This virtual
Figure 40. Inverting Amplifier With Voltage
ground can be generated using two large
Reference
resistors, but a preferred technique is to use a
virtual-ground generator such as the TLE2426 (see Figure 40). The TLE2426 supplies an accurate voltage
equal to VDD /2, while consuming very little power and is suitable for supply voltages of greater than 4 V.
24
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APPLICATION INFORMATION
single-supply operation (continued)
The TLV232x works well in conjunction with digital logic; however, when powering both linear devices and digital
logic from the same power supply, the following precautions are recommended:
•
•
Power the linear devices from separate bypassed supply lines (see Figure 41); otherwise, the linear
device supply rails can fluctuate due to voltage drops caused by high switching currents in the digital
logic.
Use proper bypass techniques to reduce the probability of noise-induced errors. Single capacitive
decoupling is often adequate; however, RC decoupling may be necessary in high-frequency
applications.
–
+
Logic
Logic
Logic
Power
Supply
(a) COMMON-SUPPLY RAILS
–
+
Logic
Logic
Logic
Power
Supply
(b) SEPARATE-BYPASSED SUPPLY RAILS (preferred)
Figure 41. Common Versus Separate Supply Rails
input characteristics
The TLV232x is specified with a minimum and a maximum input voltage that, if exceeded at either input, could
cause the device to malfunction. Exceeding this specified range is a common problem, especially in
single-supply operation. The lower the range limit includes the negative rail, while the upper range limit is
specified at VDD – 1 V at TA = 25°C and at VDD – 1.2 V at all other temperatures.
The use of the polysilicon-gate process and the careful input circuit design gives the TLV232x very good input
offset voltage drift characteristics relative to conventional metal-gate processes. Offset voltage drift in CMOS
devices is highly influenced by threshold voltage shifts caused by polarization of the phosphorus dopant
implanted in the oxide. Placing the phosphorus dopant in a conductor (such as a polysilicon gate) alleviates the
polarization problem, thus reducing threshold voltage shifts by more than an order of magnitude. The offset
voltage drift with time has been calculated to be typically 0.1 µV/month, including the first month of operation.
Because of the extremely high input impedance and resulting low bias-current requirements, the TLV232x is
well suited for low-level signal processing; however, leakage currents on printed-circuit boards and sockets can
easily exceed bias-current requirements and cause a degradation in device performance. It is good practice
to include guard rings around inputs (similar to those of Figure 38 in the Parameter Measurement Information
section). These guards should be driven from a low-impedance source at the same voltage level as the
common-mode input (see Figure 42).
The inputs of any unused amplifiers should be tied to ground to avoid possible oscillation.
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OPERATIONAL AMPLIFIERS
SLOS187 – FEBRUARY 1997
APPLICATION INFORMATION
input characteristics (continued)
–
Vi
+
VO
VI
–
+
(a) NONINVERTING AMPLIFIER
(b) INVERTING AMPLIFIER
–
VO
+
VI
VO
(c) UNITY-GAIN AMPLIFIER
Figure 42. Guard-Ring Schemes
noise performance
The noise specifications in operational amplifier circuits are greatly dependent on the current in the first-stage
differential amplifier. The low input bias-current requirements of the TLV232x result in a very low noise current,
which is insignificant in most applications. This feature makes the device especially favorable over bipolar
devices when using values of circuit impedance greater than 50 kΩ, since bipolar devices exhibit greater noise
currents.
feedback
Operational amplifier circuits nearly always
employ feedback, and since feedback is the first
prerequisite for oscillation, caution is appropriate.
Most oscillation problems result from driving
capacitive loads and ignoring stray input
capacitance. A small-value capacitor connected
in parallel with the feedback resistor is an effective
remedy (see Figure 43). The value of this
capacitor is optimized empirically.
–
+
electrostatic-discharge protection
Figure 43. Compensation for Input Capacitance
The TLV232x incorporates an internal
electrostatic-discharge (ESD)-protection circuit
that prevents functional failures at voltages up to 2000 V as tested under MIL-PRF-38535, Method 3015.2. Care
should be exercised, however, when handling these devices as exposure to ESD can result in the degradation
of the device parametric performance. The protection circuit also causes the input bias currents to be
temperature dependent and have the characteristics of a reverse-biased diode.
latch-up
Because CMOS devices are susceptible to latch-up due to their inherent parasitic thyristors, the TLV232x inputs
and outputs are designed to withstand – 100-mA surge currents without sustaining latch-up; however,
techniques should be used to reduce the chance of latch-up whenever possible. Internal-protection diodes
should not by design be forward biased. Applied input and output voltage should not exceed the supply voltage
26
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SLOS187 – FEBRUARY 1997
APPLICATION INFORMATION
by more than 300 mV. Care should be exercised when using capacitive coupling on pulse generators. Supply
transients should be shunted by the use of decoupling capacitors (0.1 µF typical) located across the supply rails
as close to the device as possible.
The current path established if latch-up occurs is usually between the positive supply rail and ground and can
be triggered by surges on the supply lines and/or voltages on either the output or inputs that exceed the supply
voltage. Once latch-up occurs, the current flow is limited only by the impedance of the power supply and the
forward resistance of the parasitic thyristor and usually results in the destruction of the device. The chance of
latch-up occurring increases with increasing temperature and supply voltages.
output characteristics
VDD
The output stage of the TLV232x is designed to
sink and source relatively high amounts of current
(see Typical Characteristics). If the output is
subjected to a short-circuit condition, this
high-current capability can cause device damage
under certain conditions. Output current capability
increases with supply voltage.
Although the TLV232x possesses excellent
high-level output voltage and current capability,
methods are available for boosting this capability,
if needed. The simplest method involves the use
of a pullup resistor (RP) connected from the output
to the positive supply rail (see Figure 44). There
are two disadvantages to the use of this circuit.
First, the NMOS pulldown transistor N4 (see
equivalent schematic) must sink a comparatively
large amount of current. In this circuit, N4 behaves
like a linear resistor with an on resistance between
approximately 60 Ω and 180 Ω depending on how
hard the operational amplifier input is driven. With
very low values of RP , a voltage offset from 0 V at
the output occurs. Secondly, pullup resistor RP
acts as a drain load to N4 and the gain of the
operational amplifier is reduced at output voltage
levels where N5 is not supplying the output
current.
RP
IP
–
VI
R
+
VO
IF
R2
IL
R1
P
* VO
+ IVDD
)I )I
F
L
P
IP = Pullup Current
Required by the
Operational Amplifier
(typically 500 µA)
RL
Figure 44. Resistive Pullup to Increase VOH
2.5 V
–
VI
VO
+
CL
TA = 25°C
f = 1 kHz
VI(PP) = 1 V
– 2.5 V
Figure 45. Test Circuit for Output Characteristics
All operating characteristics of the TLV232x are
measured using a 20-pF load. The device drives
higher capacitive loads; however, as output load capacitance increases, the resulting response pole occurs at
lower frequencies, thereby causing ringing, peaking, or even oscillation (see Figure 45 and Figure 46). In many
cases, adding some compensation in the form of a series resistor in the feedback loop alleviates the problem.
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TLV2322, TLV2322Y, TLV2324, TLV2324Y
LinCMOS LOW-VOLTAGE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS187 – FEBRUARY 1997
APPLICATION INFORMATION
output characteristics (continued)
(a) CL = 20 pF, RL = NO LOAD
(b) CL = 260 pF, RL = NO LOAD
Figure 46. Effect of Capacitive Loads
28
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(c) CL = 310 pF, RL = NO LOAD
PACKAGE OPTION ADDENDUM
www.ti.com
23-Apr-2022
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
TLV2322ID
ACTIVE
SOIC
D
8
75
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
2322I
TLV2322IDR
ACTIVE
SOIC
D
8
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
2322I
TLV2322IP
ACTIVE
PDIP
P
8
50
RoHS & Green
NIPDAU
N / A for Pkg Type
-40 to 85
TLV2322IP
TLV2322IPWR
ACTIVE
TSSOP
PW
8
2000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
TY2322
TLV2324ID
ACTIVE
SOIC
D
14
50
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
TLV2324I
TLV2324IDR
ACTIVE
SOIC
D
14
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
TLV2324I
TLV2324IN
ACTIVE
PDIP
N
14
25
RoHS & Green
NIPDAU
N / A for Pkg Type
-40 to 85
TLV2324IN
TLV2324IPWR
ACTIVE
TSSOP
PW
14
2000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
TY2324
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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