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TLV2370, TLV2371, TLV2372
TLV2373, TLV2374, TLV2375
SLOS270F – MARCH 2001 – REVISED AUGUST 2016
TLV237x 500-µA/Ch, 3-MHz Rail-to-Rail Input and Output
Operational Amplifiers With Shutdown
1 Features
3 Description
•
•
•
•
•
•
The TLV237x single-supply operational amplifiers
provide rail-to-rail input and output capability. The
TLV237x takes the minimum operating supply voltage
down to 2.7 V over the extended industrial
temperature range while adding the rail-to-rail output
swing feature. The TLV237x also provides 3-MHz
bandwidth from only 550 μA. The maximum
recommended supply voltage is 16 V, which allows
the devices to be operated from (±8-V supplies down
to ±1.35 V) a variety of rechargeable cells.
1
•
•
•
•
Rail-to-Rail Input and Output
Wide Bandwidth: 3 MHz
High Slew Rate: 2.4 V/μs
Supply Voltage Range: 2.7 V to 16 V
Supply Current: 550 μA/Channel
Low-Power Shutdown Mode
– IDD(SHDN): 25 μA/Channel
Input Noise Voltage: 39 nV/√Hz
Input Bias Current: 1 pA
Specified Temperature Range:
– −40°C to +125°C (Industrial Grade)
Ultra-Small Packaging:
– 5- or 6-Pin SOT-23 (TLV2370, TLV2371)
– 8- or 10-Pin MSOP (TLV2372, TLV2373)
2 Applications
•
•
•
•
•
•
•
White Goods
Handheld Test Equipment
Portable Blood Glucose Systems
Remote Sensing
Active Filters
Industrial Automation
Battery-Powered Electronics
Operational Amplifier
The CMOS inputs enable use in high-impedance
sensor interfaces, with the lower voltage operation
making an ideal alternative for the TLC227x in
battery-powered applications. The rail-to-rail input
stage further increases its versatility. The TLV237x is
the seventh member of a rapidly growing number of
RRIO products available from TI, and it is the first to
allow operation up to 16-V rails with good ac
performance.
All members are available in PDIP and SOIC with the
singles in the small SOT-23 package, duals in the
MSOP, and quads in the TSSOP package.
The 2.7-V operation makes the TLV237x compatible
with Li-Ion powered systems and the operating supply
voltage range of many micro-power microcontrollers
available today including TI’s MSP430.
Device Information(1)
PART NUMBER
−
+
TLV237x
PACKAGE
BODY SIZE (NOM)
PDIP (8)
9.81 mm × 6.35 mm
PDIP (14)
19.30 mm × 6.35 mm
SOIC (8)
4.90 mm × 3.91 mm
SOIC (14)
8.65 mm × 3.91 mm
TSSOP (14)
TSSOP (16)
SOT-23 (6)
SOT-23 (5)
VSSOP (8)
VSSOP (10)
5.00 mm × 4.40 mm
2.90 mm × 1.60 mm
3.00 mm × 3.00 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TLV2370, TLV2371, TLV2372
TLV2373, TLV2374, TLV2375
SLOS270F – MARCH 2001 – REVISED AUGUST 2016
www.ti.com
Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Device Comparison Tables...................................
Pin Configuration and Functions .........................
Specifications.........................................................
7.1
7.2
7.3
7.4
7.5
7.6
7.7
7.8
7.9
7.10
8
1
1
1
2
3
3
8
Absolute Maximum Ratings ...................................... 8
Recommended Operating Conditions....................... 8
Thermal Information: TLV2370 ................................. 9
Thermal Information: TLV2371 ................................. 9
Thermal Information: TLV2372 ................................. 9
Thermal Information: TLV2373 ............................... 10
Thermal Information: TLV2374 ............................... 10
Thermal Information: TLV2375 ............................... 10
Electrical Characteristics......................................... 11
Typical Characteristics .......................................... 15
Detailed Description ............................................ 22
8.1 Overview ................................................................. 22
8.2 Functional Block Diagram ....................................... 22
8.3 Feature Description................................................. 22
8.4 Device Functional Modes........................................ 24
9
Application and Implementation ........................ 25
9.1 Application Information............................................ 25
9.2 Typical Application .................................................. 25
10 Power Supply Recommendations ..................... 27
11 Layout................................................................... 27
11.1 Layout Guidelines ................................................. 27
11.2 Layout Example .................................................... 27
11.3 Power Dissipation Considerations ........................ 28
12 Device and Documentation Support ................. 29
12.1
12.2
12.3
12.4
12.5
12.6
12.7
Documentation Support ........................................
Related Links ........................................................
Receiving Notification of Documentation Updates
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
29
29
29
29
29
29
29
13 Mechanical, Packaging, and Orderable
Information ........................................................... 30
4 Revision History
Changes from Revision E (May 2016) to Revision F
•
Page
Changed names of pins 2 and 3 in TLV2372 D, DGK, and P packages pinout diagram ...................................................... 4
Changes from Revision D (January 2005) to Revision E
Page
•
Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section. ................................................................................................. 1
•
Deleted TLV2370 and TLV2371 Available Options, TLV2372 AND TLV2373 Available Options, and TLV2374 and
TLV2375 Available Options tables ......................................................................................................................................... 3
•
Deleted Continuous total power dissipation and lead temperature specifications from Absolute Maximum Ratings table ... 8
•
Deleted Dissipation Ratings table ........................................................................................................................................ 14
2
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TLV2373, TLV2374, TLV2375
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SLOS270F – MARCH 2001 – REVISED AUGUST 2016
5 Device Comparison Tables
Table 1. Selection of Signal Amplifier Products (1)
DEVICE
VDD
(V)
VIO
(µV)
IQ/Ch
(µA)
IIB
(pA)
GBW
(MHz)
SR
(V/µs)
SHUTDOWN
RAIL-TORAIL
SINGLES,
DUALS,
QUADS
TLV237x
2.7 to 16
500
550
1
3
2.4
Yes
I/O
S, D, Q
TLC227x
4 to 16
300
1100
1
2.2
3.6
—
O
D, Q
TLV27x
2.7 to 16
500
550
1
3
2.4
—
O
S, D, Q
TLC27x
3 to 16
1100
675
1
1.7
3.6
—
—
S, D, Q
TLV246x
2.7 to 16
150
550
1300
6.4
1.6
Yes
I/O
S, D, Q
TLV247x
2.7 to 16
250
600
2
2.8
1.5
Yes
I/O
S, D, Q
TLV244x
2.7 to 10
300
725
1
1.8
1.4
—
O
D, Q
(1)
Typical values measured at 5 V and 25°C.
Table 2. Family Package Table (1)
PACKAGE TYPES
DEVICE
NUMBER OF
CHANNELS
PDIP
SOIC
SOT-23
TSSOP
MSOP
TLV2370
1
8
8
6
—
—
Yes
TLV2371
1
8
8
5
—
—
—
TLV2372
2
8
8
—
—
8
—
TLV2373
2
14
14
—
—
10
Yes
TLV2374
4
14
14
—
14
—
—
TLV2375
4
16
16
—
16
—
Yes
(1)
SHUTDOWN
UNIVERSAL
EVM
BOARD
See the EVM
Selection
Guide
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
website at www.ti.com.
6 Pin Configuration and Functions
TLV2370 DBV Package
6-Pin SOT-23
Top View
6
1
OUT
GND
IN+
2
3
TLV2370 D and P Packages
8-Pin SOIC and PDIP
Top View
VDD
SHDN
5
IN-
4
NC
1
8
SHDN
IN-
2
7
VDD
IN+
3
6
OUT
GND
4
5
NC
Pin Functions: TLV2370
PIN
NAME
I/O
DESCRIPTION
SOT-23
SOIC, PDIP
GND
2
4
—
IN–
4
2
I
Negative (inverting) input
IN+
3
3
I
Positive (noninverting) input
NC
—
1, 5
—
No internal connection (can be left floating)
OUT
1
6
O
Output
SHDN
5
8
I
Shutdown control (active low, can be left floating)
VDD
6
7
—
Copyright © 2001–2016, Texas Instruments Incorporated
Ground connection
Positive power supply
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SLOS270F – MARCH 2001 – REVISED AUGUST 2016
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TLV2371 DBV Package
5-Pin SOT-23
Top View
OUT
5
1
GND
TLV2371 D and P Packages
8-Pin SOIC and PDIP
Top View
VDD
2
3
IN+
4
NC
1
8
NC
IN-
2
7
VDD
IN +
3
6
OUT
GND
4
5
NC
IN-
Pin Functions: TLV2371
PIN
NAME
I/O
DESCRIPTION
SOT-23
SOIC, PDIP
GND
2
4
—
IN–
4
2
I
Negative (inverting) input
IN+
3
3
I
Positive (noninverting) input
NC
—
1, 5, 8
—
No internal connection (can be left floating)
OUT
1
6
O
Output
VDD
5
7
—
Positive power supply
Ground connection
TLV2372 D, DGK, and P Packages
8-Pin SOIC, VSSOP, and PDIP
Top View
1OUT
1
8
VDD
1IN-
2
7
2OUT
1IN+
3
6
2IN-
GND
4
5
2IN+
Pin Functions: TLV2372
PIN
SOIC, VSSOP,
PDIP
I/O
GND
4
—
1IN–
2
I
Inverting input, channel 1
1IN+
3
I
Noninverting input, channel 1
2IN–
6
I
Inverting input, channel 2
2IN+
5
I
Noninverting input, channel 2
1OUT
1
O
Output, channel 1
2OUT
7
O
Output, channel 2
VDD
8
—
Positive power supply
NAME
4
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DESCRIPTION
Ground connection
Copyright © 2001–2016, Texas Instruments Incorporated
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TLV2370, TLV2371, TLV2372
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SLOS270F – MARCH 2001 – REVISED AUGUST 2016
TLV2373 DGS Package
10-Pin VSSOP
Top View
VDD
1OUT
1
10
1IN-
2
9
2OUT
1IN+
3
8
2IN-
GND
4
7
2IN+
5
1SHDN
6
TLV2373 D and N Packages
14-Pin SOIC and PDIP
Top View
1OUT
1
14
VDD
1IN-
2
13
2OUT
1IN+
3
12
2IN-
GND
4
11
2IN+
NC
2SHDN
NC
5
10
1SHDN
6
9
2SHDN
NC
7
8
NC
Pin Functions: TLV2373
PIN
NAME
I/O
DESCRIPTION
SOIC, PDIP
VSSOP
GND
4
4
—
1IN–
2
2
I
Inverting input, channel 1
1IN+
3
3
I
Noninverting input, channel 1
2IN–
12
8
I
Inverting input, channel 2
2IN+
11
7
I
Noninverting input, channel 2
1OUT
1
1
O
Output, channel 1
2OUT
13
9
O
Output, channel 2
1SHDN
6
5
I
Shutdown control, channel 1, (active low, can be left floating)
2SHDN
9
6
I
Shutdown control, channel 2, (active low, can be left floating)
VDD
14
10
—
Positive power supply
NC
5, 7, 8, 10
—
—
No internal connection (can be left floating)
Copyright © 2001–2016, Texas Instruments Incorporated
Ground connection
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SLOS270F – MARCH 2001 – REVISED AUGUST 2016
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TLV2374 D, N, and PW Packages
14-Pin SOIC, PDIP, and TSSOP
Top View
1OUT
1
14
4OUT
1IN-
2
13
4IN-
1IN+
3
12
4IN+
VDD
4
11
GND
2IN+
5
10
3IN+
2IN-
6
9
3IN-
2OUT
7
8
3OUT
Pin Functions: TLV2374
PIN
NAME
SOIC, PDIP, TSSOP
I/O
DESCRIPTION
GND
11
—
1IN–
2
I
Inverting input, channel 1
1IN+
3
I
Noninverting input, channel 1
2IN–
6
I
Inverting input, channel 2
2IN+
5
I
Noninverting input, channel 2
3IN–
9
I
Inverting input, channel 3
3IN+
10
I
Noninverting input, channel 3
4IN–
13
I
Inverting input, channel 4
4IN+
12
I
Noninverting input, channel 4
1OUT
1
O
Output, channel 1
2OUT
7
O
Output, channel 2
3OUT
8
O
Output, channel 3
4OUT
14
O
Output, channel 4
VDD
4
—
Positive power supply
6
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Ground connection
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SLOS270F – MARCH 2001 – REVISED AUGUST 2016
TLV2375 D, N, and PW Packages
16-Pin SOIC, PDIP, and TSSOP
Top View
1OUT
1IN −
1IN+
VDD+
2IN+
2IN −
2OUT
1/2SHDN
1
16
2
15
3
14
4
13
5
12
6
11
7
10
8
9
4OUT
4IN −
4IN+
GND
3IN +
3IN−
3OUT
3/4SHDN
Pin Functions: TLV2375
PIN
NAME
SOIC, PDIP, TSSOP
I/O
DESCRIPTION
GND
13
—
1IN–
2
I
Ground connection
Inverting input, channel 1
2IN–
6
I
Inverting input, channel 2
3IN–
11
I
Inverting input, channel 3
4IN–
15
I
Inverting input, channel 4
1IN+
3
I
Noninverting input, channel 1
2IN+
5
I
Noninverting input, channel 2
3IN+
12
I
Noninverting input, channel 3
4IN+
14
I
Noninverting input, channel 4
1OUT
1
O
Output, channel 1
2OUT
7
O
Output, channel 2
3OUT
10
O
Output, channel 3
4OUT
16
O
Output, channel 4
1/2SHDN
8
I
Shutdown control, channels 1 and 2, (active low, can be left floating)
3/4SHDN
9
I
Shutdown control, channels 3 and 4, (active low, can be left floating)
VDD
4
—
Positive power supply
TYPICAL PIN 1 INDICATORS
Pin 1
Printed or
Molded Dot
Pin 1
Stripe
Pin 1
Bevel Edges
Pin 1
Molded “U” Shape
If there is not a Pin 1 indicator, turn device to enable reading the symbol from the left to right. Pin 1 is at the lower left
corner of the device.
Figure 1. Typical Pin 1 Indicators
Copyright © 2001–2016, Texas Instruments Incorporated
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SLOS270F – MARCH 2001 – REVISED AUGUST 2016
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7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
MIN
Supply voltage, VDD
Voltage
Current
Temperature
(2)
UNIT
16.5
Differential input voltage, VID
–VDD
VDD
Input voltage, VI (2)
–0.2
VDD + 0.2
Input current, IIN
–10
10
Output current, IO
–100
100
Operating free-air temperature, TA: I-suffix
–40
125
Maximum junction temperature, TJ
Storage temperature, Tstg
(1)
MAX
(2)
V
mA
150
–65
°C
150
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltage values, except differential voltages, are with respect to GND.
7.2 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted).
Single supply
Supply voltage, VDD
Split supply
Common-mode input voltage, VCM
Operating free-air temperature, TA
I-suffix
MIN
MAX
2.7
16
±1.35
±8
0
VDD
V
–40
125
°C
2
V
Turnon voltage (shutdown pin voltage level), V(ON), relative to GND pin voltage
Turnoff (shutdown pin voltage level), V(OFF), relative to GND pin voltage
8
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0.8
UNIT
V
V
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SLOS270F – MARCH 2001 – REVISED AUGUST 2016
7.3 Thermal Information: TLV2370
TLV2370
THERMAL METRIC (1)
DBV (SOT-23)
D (SOIC)
P (PDIP)
6 PINS
8 PINS
8 PINS
UNIT
RθJA
Junction-to-ambient thermal resistance
228.5
138.4
49.2
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
99.1
89.5
39.4
°C/W
RθJB
Junction-to-board thermal resistance
54.6
78.6
26.4
°C/W
ψJT
Junction-to-top characterization parameter
7.7
29.9
15.4
°C/W
ψJB
Junction-to-board characterization parameter
53.8
78.1
26.3
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
n/a
n/a
n/a
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
7.4 Thermal Information: TLV2371
TLV2371
THERMAL METRIC
(1)
DBV (SOT-23)
D (SOIC)
P (PDIP)
5 PINS
8 PINS
8 PINS
UNIT
RθJA
Junction-to-ambient thermal resistance
228.5
138.4
49.2
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
99.1
89.5
39.4
°C/W
RθJB
Junction-to-board thermal resistance
54.6
78.6
26.4
°C/W
ψJT
Junction-to-top characterization parameter
7.7
29.9
15.4
°C/W
ψJB
Junction-to-board characterization parameter
53.8
78.1
26.3
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
n/a
n/a
n/a
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
7.5 Thermal Information: TLV2372
TLV2372
THERMAL METRIC
(1)
D (SOIC)
DGK (VSSOP)
P (PDIP)
8 PINS
8 PINS
8 PINS
UNIT
RθJA
Junction-to-ambient thermal resistance
138.4
191.2
49.2
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
89.5
61.9
39.4
°C/W
RθJB
Junction-to-board thermal resistance
78.6
111.9
26.4
°C/W
ψJT
Junction-to-top characterization parameter
29.9
5.1
15.4
°C/W
ψJB
Junction-to-board characterization parameter
78.1
110.2
26.3
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
n/a
n/a
n/a
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
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7.6 Thermal Information: TLV2373
TLV2373
THERMAL METRIC (1)
DGS (VSSOP)
D (SOIC)
P (PDIP)
10 PINS
14 PINS
14 PINS
UNIT
RθJA
Junction-to-ambient thermal resistance
166.5
67
66.3
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
41.8
24.1
20.5
°C/W
RθJB
Junction-to-board thermal resistance
86.1
22.5
26.8
°C/W
ψJT
Junction-to-top characterization parameter
1.5
2.2
2.1
°C/W
ψJB
Junction-to-board characterization parameter
84.7
22.1
26.2
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
n/a
n/a
n/a
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
7.7 Thermal Information: TLV2374
TLV2374
THERMAL METRIC
(1)
D (SOIC)
N (PDIP)
PW (TSSOP)
14 PINS
14 PINS
14 PINS
UNIT
67
66.3
121
°C/W
RθJA
Junction-to-ambient thermal resistance
RθJC(top)
Junction-to-case (top) thermal resistance
24.1
20.5
49.4
°C/W
RθJB
Junction-to-board thermal resistance
22.5
26.8
62.8
°C/W
ψJT
Junction-to-top characterization parameter
2.2
2.1
5.9
°C/W
ψJB
Junction-to-board characterization parameter
22.1
26.2
62.2
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
n/a
n/a
n/a
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
7.8 Thermal Information: TLV2375
TLV2375
THERMAL METRIC
(1)
D (SOIC)
N (PDIP)
PW (TSSOP)
16 PINS
16 PINS
16 PINS
UNIT
RθJA
Junction-to-ambient thermal resistance
83
55.8
115.6
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
44
43.1
50.5
°C/W
RθJB
Junction-to-board thermal resistance
40.5
35.8
60.7
°C/W
ψJT
Junction-to-top characterization parameter
11.5
27.9
7.4
°C/W
ψJB
Junction-to-board characterization parameter
40.2
35.7
60.1
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
n/a
n/a
n/a
°C/W
(1)
10
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
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SLOS270F – MARCH 2001 – REVISED AUGUST 2016
7.9 Electrical Characteristics
at TA = 25°C, VDD = 2.7 V, 5 V, and 15 V (unless otherwise noted).
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
2
4.5
mV
6
mV
DC PERFORMANCE
At TA = 25°C, VIC = VDD/2, VO = VDD/2, RS = 50 Ω
VOS
Input offset voltage
At TA = –40°C to +125°C, VIC = VDD/2, VO = VDD/2,
RS = 50 Ω
dVOS/dT
Offset voltage drift
At TA = 25°C, VIC = VDD/2, VO = VDD/2, RS = 50 Ω
VDD = 2.7 V,
RS = 50 Ω
CMRR
Common-mode rejection ratio
VDD = 5 V,
RS = 50 Ω
VDD = 15 V,
RS = 50 Ω
VDD = 2.7 V,
VO(PP) =
VDD/2,
RL = 10 kΩ
AVD
Large-signal differential
voltage amplification
VDD = 5 V,
VO(PP) =
VDD/2,
RL = 10 kΩ
VDD = 15 V,
VO(PP) =
VDD/2,
RL = 10 kΩ
2
VIC = 0 to VDD
50
At TA = –40°C to +125°C,
VIC = 0 to VDD
49
VIC = 0 to VDD − 1.35 V
56
At TA = –40°C to +125°C,
VIC = 0 to VDD − 1.35 V
54
VIC = 0 to VDD
55
At TA = –40°C to +125°C,
VIC = 0 to VDD
54
VIC = 0 to VDD − 1.35 V
67
At TA = –40°C to +125°C,
VIC = 0 to VDD − 1.35 V
64
VIC = 0 to VDD
64
At TA = –40°C to +125°C,
VIC = 0 to VDD
63
VIC = 0 to VDD − 1.35 V
67
At TA = –40°C to +125°C,
VIC = 0 to VDD − 1.35 V
66
98
At TA = –40°C to +125°C
72
dB
80
82
84
106
110
dB
86
81
At TA = –40°C to +125°C
70
76
100
At TA = –40°C to +125°C
µV/°C
68
83
79
INPUT CHARACTERISTICS
IOS
IB
Input offset current
Input bias current
VDD = 15 V,
VIC = VO =
VDD/2
VDD = 15 V,
VIC = VO =
VDD/2
1
100
At TA = 125°C
1000
1
100
At TA = 125°C
1000
f = 21 kHz
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pA
1000
GΩ
8
pF
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pA
60
At TA = 70°C
Differential input resistance
Common-mode input
capacitance
60
At TA = 70°C
11
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Electrical Characteristics (continued)
at TA = 25°C, VDD = 2.7 V, 5 V, and 15 V (unless otherwise noted).
PARAMETER
TEST CONDITIONS
MIN
TYP
At TA = 25°C, VIC = VDD/2, IOH = −1 mA
2.55
2.58
At TA = –40°C to +125°C, VIC = VDD/2,
IOH = −1 mA
2.48
At TA = 25°C, VIC = VDD/2, IOH = −1 mA
4.9
At TA = –40°C to +125°C, VIC = VDD/2,
IOH = −1 mA
4.85
At TA = 25°C, VIC = VDD/2, IOH = −1 mA
14.92
At TA = –40°C to +125°C, VIC = VDD/2,
IOH = −1 mA
14.9
At TA = 25°C, VIC = VDD/2, IOH = −5 mA
1.9
At TA = –40°C to +125°C, VIC = VDD/2,
IOH = −5 mA
1.6
At TA = 25°C, VIC = VDD/2, IOH = −5 mA
4.6
At TA = –40°C to +125°C, VIC = VDD/2,
IOH = −5 mA
4.5
At TA = 25°C, VIC = VDD/2, IOH = −5 mA
14.7
At TA = –40°C to +125°C, VIC = VDD/2,
IOH = −5 mA
14.6
MAX
UNIT
OUTPUT CHARACTERISTICS
VDD = 2.7 V
VDD = 5 V
VDD = 15 V
VOH
High-level output voltage
VDD = 2.7 V
VDD = 5 V
VDD = 15 V
At TA = 25°C, VIC = VDD/2, IOL = 1 mA
VDD = 2.7 V
VOL
Low-level output voltage
12
Output current
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0.1
0.15
0.22
0.05
0.1
0.15
0.05
0.08
0.1
0.52
0.7
V
1.1
0.28
At TA = –40°C to +125°C, VIC = VDD/2,
IOL = 5 mA
At TA = 25°C, VIC = VDD/2, IOL = 5 mA
IO
14.8
At TA = –40°C to +125°C, VIC = VDD/2,
IOL = 5 mA
At TA = 25°C, VIC = VDD/2, IOL = 5 mA
VDD = 5 V
V
4.68
At TA = –40°C to +125°C, VIC = VDD/2,
IOL = 1 mA
At TA = 25°C, VIC = VDD/2, IOL = 5 mA
VDD = 2.7 V
2
At TA = –40°C to +125°C, VIC = VDD/2,
IOL = 1 mA
At TA = 25°C, VIC = VDD/2, IOL = 1 mA
VDD = 15 V
14.96
At TA = –40°C to +125°C, VIC = VDD/2,
IOL = 1 mA
At TA = 25°C, VIC = VDD/2, IOL = 1 mA
VDD = 5 V
4.93
0.4
0.5
0.19
VDD = 15 V
At TA = –40°C to +125°C, VIC = VDD/2,
IOL = 5 mA
VDD = 2.7 V,
VO = 0.5 V
from rail
Positive rail
4
Negative rail
5
VDD = 5 V,
VO = 0.5 V
from rail
Positive rail
7
Negative rail
8
VDD = 15 V,
VO = 0.5 V
from rail
Positive rail
16
Negative rail
15
0.3
0.35
mA
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SLOS270F – MARCH 2001 – REVISED AUGUST 2016
Electrical Characteristics (continued)
at TA = 25°C, VDD = 2.7 V, 5 V, and 15 V (unless otherwise noted).
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
VDD = 2.7 V, VO = VDD/2
470
560
VDD = 5 V, VO = VDD/2
550
660
750
900
UNIT
POWER SUPPLY
IDD
PSRR
Supply current (per channel)
Power-supply rejection ratio
(ΔVDD/ΔVIO)
VDD = 15 V,
VO = VDD/2
At TA = 25°C
VDD = 2.7 V
to 15 V,
VIC = VDD/2,
no load
At TA = 25°C
70
At TA = –40°C to +125°C
65
VDD = 2.7 V
RL = 2 kΩ, CL = 10 pF
2.4
VDD = 5 V to
15 V
RL = 2 kΩ, CL = 10 pF
3
At TA = –40°C to +125°C
µA
1200
80
dB
DYNAMIC PERFORMANCE
UGBW
Unity gain bandwidth
At TA = 25°C, VO(PP) = VDD/2,
CL = 50 pF, RL = 10 kΩ
VDD = 2.7 V
SR
Slew rate at unity gain
VDD = 5 V
VDD = 15 V
φm
ts
At TA = –40°C to +125°C, VO(PP) =
VDD/2,
CL = 50 pF, RL = 10 kΩ
1.4
MHz
2
1
At TA = 25°C, VO(PP) = VDD/2,
CL = 50 pF, RL = 10 kΩ
1.6
At TA = –40°C to +125°C, VO(PP) =
VDD/2,
CL = 50 pF, RL = 10 kΩ
1.2
At TA = 25°C, VO(PP) = VDD/2,
CL = 50 pF, RL = 10 kΩ
1.9
At TA = –40°C to +125°C, VO(PP) =
VDD/2,
CL = 50 pF, RL = 10 kΩ
1.4
2.4
V/µs
2.1
Phase margin
RL = 2 kΩ, CL = 100 pF
65
°
Gain margin
RL = 2 kΩ, CL = 10 pF
18
dB
VDD = 2.7 V, V(STEP)PP = 1 V, AV = −1,
CL = 10 pF, RL = 2 kΩ, 0.1%
2.9
Settling time
µs
VDD = 5 V, 15 V, V(STEP)PP = 1 V, AV = −1,
CL = 47 pF, RL = 2 kΩ, 0.1%
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Electrical Characteristics (continued)
at TA = 25°C, VDD = 2.7 V, 5 V, and 15 V (unless otherwise noted).
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
NOISE, DISTORTION PERFORMANCE
VDD = 2.7 V
THD + N
Total harmonic distortion plus
noise
VDD = 5 V,
15 V
VO(PP)= VDD/2 V, RL = 2 kΩ,
f = 10 kHz, AV = 1
0.02%
VO(PP)= VDD/2 V, RL = 2 kΩ,
f = 10 kHz, AV = 10
0.05%
VO(PP)= VDD/2 V, RL = 2 kΩ,
f = 10 kHz, AV = 100
0.18%
VO(PP)= VDD/2 V, RL = 2 kΩ,
f = 10 kHz, AV = 1
0.02%
VO(PP)= VDD/2 V, RL = 2 kΩ,
f = 10 kHz, AV = 10
0.09%
VO(PP)= VDD/2 V, RL = 2 kΩ,
f = 10 kHz, AV = 100
0.5%
f = 1 kHz
39
f = 10 kHz
35
Vn
Equivalent input noise
voltage
In
Equivalent input noise current f = 1 kHz
nV/√Hz
0.6
fA/√Hz
SHUTDOWN CHARACTERISTICS
IDD(SHDN)
Supply current in shutdown
mode (TLV2370, TLV2373,
TLV2375) (per channel)
VDD = 2.7 V,
5 V,
SHDN = 0 V
At TA = 25°C
VDD = 15 V,
SHDN = 0 V
At TA = 25°C
25
At TA = –40°C to +125°C
30
35
40
At TA = –40°C to +125°C
µA
45
50
t(on)
Amplifier turnon time (1)
RL = 2 kΩ
0.8
µs
t(off)
Amplifier turnoff time (1)
RL = 2 kΩ
1
µs
(1)
14
Disable time and enable time are defined as the interval between application of the logic signal to the SHDN terminal and the point at
which the supply current has reached one half of its final value.
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SLOS270F – MARCH 2001 – REVISED AUGUST 2016
7.10 Typical Characteristics
Table 3. Table of Graphs
FIGURE
VIO
Input offset voltage
vs Common-mode input voltage
CMRR
Common-mode rejection ratio
vs Frequency
Figure 2, Figure 3, Figure 4
Figure 5
Input bias and offset current
vs Free-air temperature
Figure 6
VOL
Low-level output voltage
vs Low-level output current
Figure 7, Figure 9, Figure 11
VOH
High-level output voltage
vs High-level output current
Figure 8, Figure 10, Figure 12
VO(PP)
Peak-to-peak output voltage
vs Frequency
Figure 13
IDD
Supply current
vs Supply voltage
Figure 14
PSRR
Power supply rejection ratio
vs Frequency
Figure 15
AVD
Differential voltage gain and phase
vs Frequency
Figure 16
Gain-bandwidth product
vs Free-air temperature
Figure 17
vs Supply voltage
Figure 18
vs Free-air temperature
Figure 19
SR
Slew rate
φm
Phase margin
vs Capacitive load
Figure 20
Vn
Equivalent input noise voltage
vs Frequency
Figure 21
Voltage-follower large-signal pulse
response
Figure 22, Figure 23
Voltage-follower small-signal pulse
response
Figure 24
Inverting large-signal response
Figure 25, Figure 26
Inverting small-signal response
Figure 27
Crosstalk
vs Frequency
Figure 28
Shutdown forward & reverse isolation
vs Frequency
Figure 29
IDD(SHDN)
Shutdown supply current
vs Supply voltage
Figure 30
IDD(SHDN)
Shutdown pin leakage current
vs Shutdown pin voltage
IDD(SHDN)
Shutdown supply current, output voltage vs Time
Copyright © 2001–2016, Texas Instruments Incorporated
Figure 31
Figure 32, Figure 33
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1000
VDD = 2.7 V
TA = 25°C
800
Input Offset Voltage (mV)
Input Offset Voltage (mV)
1000
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600
400
200
0
VDD = 5 V
TA = 25°C
800
600
400
200
0
-200
-200
0
0.4
0.8
1.2
1.6
2
2.4 2.7
0
1
Common-Mode Input Voltage (V)
Figure 2. Input Offset Voltage vs Common-Mode Input
Voltage
600
400
200
0
-200
100
VDD = 5 V, 15 V
80
VDD = 2.7 V
60
40
20
2
4
6
8
10
12
14 15
10
100
1k
Common-Mode Input Voltage (V)
1M
Figure 5. Common-Mode Rejection Ratio vs Frequency
Low-Level Output Voltage (V)
Input Bias/Offset Current (pA)
100 k
2.80
VDD = 2.7 V, 5 V, 15 V
VIC = VDD/2
200
150
100
50
0
VDD = 2.7 V
2.40
TA = 125°C
2
1.60
TA = 70°C
1.20
TA = 25°C
0.80
TA = 0°C
0.40
TA = -40°C
0
-50
-40 -25 -10
5
20
35
50
65
80
95
110 125
Temperature, TA (°C)
Figure 6. Input Bias or Offset Current vs Free-Air
Temperature
16
10 k
Frequency (Hz)
Figure 4. Input Offset Voltage vs Common-Mode Input
Voltage
250
5
0
0
300
4
120
VDD = 15 V
TA = 25°C
800
3
Figure 3. Input Offset Voltage vs Common-Mode Input
Voltage
Common-Mode Rejection Ratio (dB)
Input Offset Voltage (mV)
1000
2
Common-Mode Input Voltage (V)
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0
2
4
6
8
10
12
14
16
18
20
24
28
Low-Level Output Current (mA)
Figure 7. Low-Level Output Voltage vs Low-Level Output
Current
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SLOS270F – MARCH 2001 – REVISED AUGUST 2016
2.80
5
2.40
TA = -40°C
2
TA = 125°C
1.60
TA = 70°C
1.20
TA = 25°C
0.80
TA = 0°C
0.40
VDD = 5 V
4.50
Low-Level Output Voltage (V)
High-Level Output Voltage (V)
VDD = 2.7 V
TA = 125°C
4
TA = 70°C
3.50
3
TA = 25°C
2.50
TA = 0°C
2
1.50
TA = -40°C
1
0.50
0
0
0
1
2
4
3
5
7
6
8
9
10
11
12
0
5
10 15 20 25 30 35 40 45 50 55 60 65 70
High-Level Output Current (mA)
Low-Level Output Current (mA)
Figure 8. High-Level Output Voltage vs High-Level Output
Current
5
15
14
VCC = 5 V
4.50
TA = 0°C
4
3.50
Low-Level Output Voltage (V)
High-Level Output Voltage (V)
Figure 9. Low-Level Output Voltage vs Low-Level Output
Current
TA = -40°C
3
TA = 25°C
2.50
2
TA = 70°C
1.50
1
TA = 125°C
0.50
10
TA = 70°C
8
6
TA = 25°C
TA = 0°C
4
TA = -40°C
2
0
0
0
5
10
15
20
25
30
35
45
40
0
20
TA = -40°C
VDD = 15 V
12
TA = 0°C
10
8
TA = 25°C
6
TA = 70°C
4
2
TA = 125°C
0
0
20
40
60
80
100
120
60
80
100
120
140
160
140
160
Figure 11. Low-Level Output Voltage vs Low-Level Output
Current
Peak-to-Peak Output Voltage (V)
Figure 10. High-Level Output Voltage vs High-Level Output
Current
15
14
40
Low-Level Output Current (mA)
High-Level Output Current (mA)
High-Level Output Voltage (V)
TA = 125°C
VDD = 15 V
12
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
AV = -10
RL = 2 kW
CL = 10 pF
TA = 25°C
THD = 5%
VDD = 15 V
VDD = 5 V
VDD = 2.7 V
10
100
1k
10 k
100 k
1M
10 M
High-Level Output Current (mA)
Frequency (Hz)
Figure 12. High-Level Output Voltage vs High-Level Output
Current
Figure 13. Peak-to-Peak Output Voltage vs Frequency
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VIC = VDD/2
AV = 2
0.9
Power-Supply Rejection Ratio (dB)
120
1
TA = 125°C
0.8
Supply Current (mA/Ch)
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TA = 70°C
0.7
0.6
0.5
TA = 25°C
0.4
TA = 0°C
0.3
TA = -40°C
0.2
0.1
TA = 25°C
100
VDD = 5 V, 15 V
80
VDD = 2.7 V
60
40
20
0
0
0
1
2
3
4
5
6
7
8
10
9 10 11 12 13 14 15
100
1k
180
4
100
135
3.5
90
Gain
60
45
40
0
20
-45
VDD = 5 VDC
RL = 2 kW
CL = 10 pF
TA = 25°C
-90
-135
Gain Bandwidth Product (MHz)
Phase
-20
-180
-40
10
100
1k
10 k
100 k
1M
VDD = 15 V
3
2.5
VDD = 2.7 V
2
1.5
1
0.5
0
10 M
-40 -25 -10
5
Frequency (Hz)
Slew Rate (V/ms)
Slew Rate (V/ms)
65
80
95
110 125
3
2.5
2
SR+
1.5
AV = 1
RL = 10 kW
CL = 50 pF
TA = 25°C
2.5
4.5
2
8.5
10.5
12.5
Figure 18. Slew Rate vs Supply Voltage
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14.5
SR+
1.5
1
0
6.5
SR-
2.5
0.5
Supply Voltage (V)
18
50
3.5
SR-
0
35
Figure 17. Gain Bandwidth Product vs Free-Air
Temperature
3
0.5
20
Temperature, TA (°C)
Figure 16. Differential Voltage Gain and Phase vs
Frequency
1
1M
VDD = 5 V
Phae (°)
Differential Voltage Gain (dB)
120
0
100 k
Figure 15. Power Supply Rejection Ratio vs Frequency
Figure 14. Supply Current vs Supply Voltage
80
10 k
Frequency (Hz)
Supply Voltage (V)
VDD = 5 V
AV = 1
RL = 10 kW
CL = 50 pF
VI = 3 V
-40 -25 -10
5
20
35
50
65
80
95
110 125
Temperature, TA (°C)
Figure 19. Slew Rate vs Free-Air Temperature
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90
80
RNULL = 100
50
40
RNULL = 50
VDD = 5 V
RL = 2 kW
TA = 25°C
AV = Open-Loop
30
20
10
RNULL = 0
0
10
100
80
70
60
50
40
30
20
VDD = 2.7 V, 5 V, 15 V
TA = 25°C
10
0
10
1000
100
1k
Capacitive Load (pF)
Input Voltage (V)
Figure 21. Equivalent Input Noise Voltage vs Frequency
4
3
VDD = 5 V
AV = 1
RL = 2 kW
CL = 10 pF
VI = 3 VPP
TA = 25°C
1
VI
0
4
3
2
1
VO
0
0
4
2
6
8
10
12
14
16
12
9
VDD = 15 V
AV = 1
RL = 2 kW
CL = 10 pF
VI = 9 VPP
TA = 25°C
6
3
VI
0
Output Voltage (V)
Input Voltage (V)
Figure 20. Phase Margin vs Capacitive Load
2
6
3
VO
0
18
0
4
2
0
0.12
0.08
0.04
VO
0
0
0.2
0.4
0.6
0.8
8
10
12
14
16
18
Figure 23. Voltage-Follower Large-Signal Pulse Response
Input Voltage (V)
VDD = 5 V
AV = 1
RL = 2 kW
CL = 10 pF
VI = 100 mVPP
TA = 25°C
1
1.2
1.4
1.6
Output Voltage (mV)
Input Voltage (mV)
0.12
VI
6
Time (ms)
Figure 22. Voltage-Follower Large-Signal Pulse Response
0.04
12
9
Time (ms)
0.08
100 k
10 k
Frequency (Hz)
Output Voltage (V)
60
90
1.8
Time (ms)
Figure 24. Voltage-Follower Small-Signal Pulse Response
Copyright © 2001–2016, Texas Instruments Incorporated
3
VDD = 5 V
AV = 1
RL = 2 kW
CL = 10 pF
VI = 3 VPP
TA = 25°C
2
1
0
VI
3
2
1
VO
0
0
2
4
6
8
10
12
14
Output Voltage (V)
Phase Margin (°)
70
100
Equivalent Input Noise Voltage (nV/ÖHz)
100
16
Time (ms)
Figure 25. Inverting Large-Signal Response
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9
VDD = 15 V
AV = -1
RL = 2 kW
CL = 10 pF
VI = 9 VPP
TA = 25°C
6
3
0
VI
9
VO
6
3
0
0
4
2
6
8
10
12
14
0.1
VDD = 5 V
AV = -1
RL = 2 kW
CL = 10 pF
VI = 100 mVPP
TA = 25°C
0.05
VI
0
VO
0.05
0
0
16
1
0.5
1.5
Time (ms)
Crosstalk (dB)
-60
-80
Crosstalk in Shutdown
-100
Crosstalk
-140
10
100
1k
10 k
100 k
Shutdown Forward and Reverse Isolation (dB)
VDD = 2.7 V, 5 V, 15 V
VI = VDD/2
AV = 1
RL = 2 kW
TA = 25°C
-120
TA = 125°C
TA = 70°C
35
30
TA = 25°C
25
TA = 0°C
20
TA = -40°C
15
10
5
0
4.5
VDD = 2.7 V, 5 V, 15 V
VI = VDD/2
RL = 2 kW
CL = 10 pF
AV = 1
TA = 25°C
140
120
100
80
60
40
20
0
10
100
1k
10 k
100 k
1M
10 M
250
TA = 125°C
200
150
100
50
0
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
Supply Voltage (V)
Figure 30. Shutdown Supply Current vs Supply Voltage
20
4
Figure 29. Shutdown Forward and Reverse Isolation vs
Frequency
Shutdown Pin Leakage Current (pA)
Shutdown Supply Current (mA/Ch)
50
40
3.5
Frequency (Hz)
Figure 28. Crosstalk vs Frequency
SHDN = 0 V
VI = VDD/2
AV = 1
3
160
Frequency (Hz)
45
2.5
Figure 27. Inverting Small-Signal Response
0
-40
2
Time (ms)
Figure 26. Inverting Large-Signal Response
-20
0.1
Output Voltage (V)
Input Voltage (V)
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Output Voltage (V)
Input Voltage (V)
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0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
Shutdown Pin Voltage (V)
Figure 31. Shutdown Pin Leakage Current vs Shutdown
Pin Voltage
Copyright © 2001–2016, Texas Instruments Incorporated
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Shutdown Pulse (V)
10
VDD = 15 V
AV = 1
RL = 2 kW
CL = 10 pF
VI = VDD/2
TA = 25°C
8
SHDN
6
4
2
Shutdown Pulse (V)
www.ti.com
6
5
SHDN
4
VDD = 5 V
AV = 1
RL = 2 kW
CL = 10 pF
VI = VDD/2
TA = 25°C
3
2
1
0
0
6
VO
4.5
3
1.5
0
-1.5
2
1.5
1
0.5
0
-0.5
-1
1
0.75
Supply Current (mA/Ch)
Supply Current (mA/Ch)
VO
2.5
Output Voltage (V)
Output Voltage (V)
7.5
IDD(SHDN = 0)
0.5
0.25
0
-0.25
-40 -20
0
20
40
60
80
100 120 140 160 180
Time (ms)
Figure 32. Shutdown Supply Current and Output Voltage
vs Time
Copyright © 2001–2016, Texas Instruments Incorporated
1
0.75
IDD(SHDN = 0)
0.5
0.25
0
-0.25
-2
-1
0
1
2
3
4
5
6
7
8
9
10
Time (ms)
Figure 33. Shutdown Supply Current/output Voltage vs
Time
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8 Detailed Description
8.1 Overview
The TLV237x single-supply CMOS operational amplifiers provide rail-to-rail input and output capability with
3-MHz bandwidth. Consuming only 550 μA the TLV237x is the perfect choice for portable and battery-operated
applications. The maximum recommended supply voltage is 16 V, which allows the devices to be operated from
(±8-V supplies down to ±1.35 V) a variety of rechargeable cells. The rail-to-rail inputs with high input impedance
make the TLV237x ideal for sensor signal-conditioning applications.
8.2 Functional Block Diagram
V+
Reference
Current
VIN+
VINVBIAS1
Class AB
Control
Circuitry
VO
VBIAS2
V(Ground)
Copyright © 2016, Texas Instruments Incorporated
8.3 Feature Description
8.3.1 Rail-to-Rail Input Operation
The TLV237x input stage consists of two differential transistor pairs, NMOS and PMOS, that operate together to
achieve rail-to-rail input operation. The transition point between these two pairs can be seen in Figure 2,
Figure 3, and Figure 4 for a 2.7-V, 5-V, and 15-V supply. As the common-mode input voltage approaches the
positive supply rail, the input pair switches from the PMOS differential pair to the NMOS differential pair. This
transition occurs approximately 1.35 V from the positive rail and results in a change in offset voltage due to
different device characteristics between the NMOS and PMOS pairs. If the input signal to the device is large
enough to swing between both rails, this transition results in a reduction in common-mode rejection ratio
(CMRR). If the input signal does not swing between both rails, it is best to bias the signal in the region where
only one input pair is active. This is the region inFigure 2 through Figure 4 where the offset voltage varies slightly
across the input range and optimal CMRR can be achieved. This has the greatest impact when operating from a
2.7-V supply voltage.
8.3.2 Driving a Capacitive Load
When the amplifier is configured in this manner, capacitive loading directly on the output decreases the device
phase margin leading to high frequency ringing or oscillations. Therefore, for capacitive loads of greater than
10 pF, TI recommends that a resistor be placed in series (RNULL) with the output of the amplifier, as shown in
Figure 34. A minimum value of 20 Ω should work well for most applications.
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SLOS270F – MARCH 2001 – REVISED AUGUST 2016
Feature Description (continued)
RF
RG
Input
RNULL
−
Output
+
CLOAD
VDD/2
Figure 34. Driving a Capacitive Load
8.3.3 Offset Voltage
The output offset voltage, (VOO) is the sum of the input offset voltage (VIO) and both input bias currents (IIB)
times the corresponding gains. Figure 35 can be used to calculate the output offset voltage:
RF
IIB-
RG
+
−
VI
VO
+
RS
IIB+
VOO = VIO 1 +
( (
RF
RG
± IIB+ RS 1 +
( (
RF
RG
± IIB- RF
Figure 35. Output Offset Voltage Model
8.3.4 General Configurations
When receiving low-level signals, limiting the bandwidth of the incoming signals into the system is often required.
The simplest way to accomplish this is to place an RC filter at the noninverting terminal of the amplifier (see
Figure 36).
RG
RF
VDD/2
VI
−
VO
+
R1
C1
f_ 3dB =
1
2pR1C1
VO æ
R öæ
1
ö
= ç1 + F ÷ ç
÷
VI è RG ø è 1 + 2pfR1C1 ø
Figure 36. Single-Pole Low-Pass Filter
If even more attenuation is needed, a multiple pole filter is required. The Sallen-Key filter can be used for this
task. For best results, the amplifier must have a bandwidth that is 8 to 10 times the filter frequency bandwidth.
Failure to do this can result in phase shift of the amplifier.
Copyright © 2001–2016, Texas Instruments Incorporated
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Feature Description (continued)
C1
+
_
VI
R1
R1 = R2 = R
C1 = C2 = C
Q = Peaking Factor
(Butterworth Q = 0.707)
R2
C2
1
2pRC
RF
RG =
1ö
æ
ç2 - Q ÷
è
ø
f_3dB =
RG
RF
VDD/2
Figure 37. 2-Pole Low-Pass Sallen-Key Filter
8.3.5 Shutdown Function
Three members of the TLV237x family (TLV2370, TLV2373, and TLV2375) have a shutdown terminal for
conserving battery life in portable applications. When the shutdown terminal is tied low, the supply current is
reduced to 25 μA/channel, the amplifier is disabled, and the outputs are placed in a high impedance mode. To
enable the amplifier, the shutdown terminal can either be left floating or pulled high. When the shutdown terminal
is left floating, take care to ensure that parasitic leakage current at the shutdown terminal does not inadvertently
place the operational amplifier into shutdown.
8.4 Device Functional Modes
The TLV2371, TLV2372, and TLV2374 have a single functional mode. These devices are operational as long as
the power-supply voltage is between 2.7 V (±1.35 V) and 16 V (±8 V).
The TLV2370, TLV2373, and TLV2375 are likewise operational as long as the power-supply voltage is between
2.7 V (±1.35 V) and 16 V (±8 V), additionally these devices also have a shutdown capability. When the shutdown
control pin is driven below 0.8 V above ground, the device is in shutdown. If the shutdown control pin voltage is
driven to greater than 2 V above ground, the device is in its normal operating mode. See Shutdown Function for
additional information regarding shutdown operation.
24
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SLOS270F – MARCH 2001 – REVISED AUGUST 2016
9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
When designing for low power, choose system components carefully. To minimize current consumption, select
large-value resistors. Any resistors can react with stray capacitance in the circuit and the input capacitance of the
operational amplifier. These parasitic RC combinations can affect the stability of the overall system. Use of a
feedback capacitor assures stability and limits overshoot or gain peaking.
9.2 Typical Application
A typical application for an operational amplifier is an inverting amplifier, as shown in Figure 38. An inverting
amplifier takes a positive voltage on the input and outputs a signal inverted to the input, making a negative
voltage of the same magnitude. In the same manner, the amplifier also makes negative input voltages positive on
the output. In addition, amplification can be added by selecting the input resistor RI and the feedback resistor RF.
RF
VSUP+
RI
VOUT
+
VIN
VSUPCopyright © 2016, Texas Instruments Incorporated
Figure 38. Application Schematic
9.2.1 Design Requirements
The supply voltage must be chosen to be larger than the input voltage range and the desired output range. The
limits of the input common-mode range (VCM) and the output voltage swing to the rails (VO) must also be
considered. For instance, this application scales a signal of ±0.5 V (1 V) to ±1.8 V (3.6 V). Setting the supply at
±2.5 V is sufficient to accommodate this application.
9.2.2 Detailed Design Procedure
Determine the gain required by the inverting amplifier using Equation 1 and Equation 2:
VOUT
AV
VIN
AV
1.8
0.5
3.6
(1)
(2)
When the desired gain is determined, choose a value for RI or RF. Choosing a value in the kΩ range is desirable
for general-purpose applications because the amplifier circuit uses currents in the milliamp range. This milliamp
current range ensures the device does not draw too much current. The trade-off is that very large resistors (100s
of kΩ) draw the smallest current but generate the highest noise. Very small resistors (100s of Ω) generate low
noise but draw high current. This example uses 10 kΩ for RI, meaning 36 kΩ is used for RF. These values are
determined by Equation 3:
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Typical Application (continued)
AV
RF
RI
(3)
9.2.3 Application Curve
2
1.5
Input
Output
Voltage (V)
1
0.5
0
-0.5
-1
-1.5
-2
Time
Figure 39. Inverting Amplifier Input and Output
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SLOS270F – MARCH 2001 – REVISED AUGUST 2016
10 Power Supply Recommendations
The TLV237x family is specified for operation from 2.7 V to 15 V (±1.35 V to ±7.5 V); many specifications apply
from –40°C to +125°C. The Typical Characteristics presents parameters that can exhibit significant variance with
regard to operating voltage or temperature.
CAUTION
Supply voltages larger than 16 V can permanently damage the device (see the
Absolute Maximum Ratings table).
Place 0.1-μF bypass capacitors close to the power-supply pins to reduce errors coupling in from noisy or highimpedance power supplies. For more detailed information on bypass capacitor placement; see Layout.
11 Layout
11.1 Layout Guidelines
To achieve the levels of high performance of the TLV237x, follow proper printed-circuit board design techniques.
A general set of guidelines is given in the following.
• Ground planes—TI highly recommends using a ground plane on the board to provide all components with a
low inductive ground connection. However, in the areas of the amplifier inputs and output, the ground plane
can be removed to minimize the stray capacitance.
• Proper power supply decoupling—Use a 6.8-μF tantalum capacitor in parallel with a 0.1-μF ceramic capacitor
on each supply terminal. It may be possible to share the tantalum among several amplifiers depending on the
application, but a 0.1-μF ceramic capacitor should always be used on the supply terminal of every amplifier.
In addition, the 0.1-μF capacitor must be placed as close as possible to the supply terminal. As this distance
increases, the inductance in the connecting trace makes the capacitor less effective. The designer should
strive for distances of less than 0.1 inches between the device power terminals and the ceramic capacitors.
• Sockets—Sockets can be used but are not recommended. The additional lead inductance in the socket pins
will often lead to stability problems. Surface-mount packages soldered directly to the printed-circuit board is
the best implementation.
• Short trace runs and compact part placements—Optimum high performance is achieved when stray series
inductance has been minimized. To realize this, the circuit layout must be made as compact as possible,
thereby minimizing the length of all trace runs. Pay particular attention to the inverting input of the amplifier.
Its length must be kept as short as possible. This helps to minimize stray capacitance at the input of the
amplifier.
• Surface-mount passive components—Using surface-mount passive components is recommended for high
performance amplifier circuits for several reasons. First, because of the extremely low lead inductance of
surface-mount components, the problem with stray series inductance is greatly reduced. Second, the small
size of surface-mount components naturally leads to a more compact layout thereby minimizing both stray
inductance and capacitance. If leaded components are used, TI recommends that the lead lengths be kept as
short as possible.
11.2 Layout Example
VIN
+
VOUT
±
RG
RF
Copyright © 2016,
Texas Instruments Incorporated
Figure 40. Schematic Representation
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Layout Example (continued)
Place components
close to device and
to eachother to
reduce parasitic
errors
Run the input traces
as far away from
the supply lines
as possible
VS+
RF
N/C
N/C
GND
–IN
V+
VIN
+IN
OUTPUT
V–
N/C
RG
GND
GND
Use low-ESR, ceramic
bypass capacitor
VS–
Use low-ESR,
ceramic bypass
capacitor
VOUT
Copyright © 2016, Texas Instruments Incorporated
Figure 41. Operational Amplifier Board Layout for Noninverting Configuration
11.3 Power Dissipation Considerations
For a given θJA, the maximum power dissipation is shown in Figure 42 and is calculated by Equation 4:
PD =
TMAX - TA
qJA
where
•
•
•
•
PD = Maximum power dissipation of TLV237x IC (watts)
TMAX = Absolute maximum junction temperature (150°C)
TA = Free-ambient air temperature (°C)
θJA = θJC (Thermal coefficient from junction to case) + θCA (Thermal coefficient from case to ambient air (°C/W))
(4)
Maximum Power Dissipation (W)
2
PDIP Package
Low-K Test PCB
qJA = 104°C/W
1.75
1.5
1.25
TJ = 150°C
SOIC Package
Low-K Test PCB
qJA = 176°C/W
MSOP Package
Low-K Test PCB
qJA = 260°C/W
1
0.75
0.5
0.25
0
SOT-23 Package
Low-K Test PCB
qJA = 324°C/W
-55 -40 -25 -10
5
20
35
50
65
80
95 110 125
Temperature (°C)
Results are with no air flow and using JEDEC Standard Low-K test PCB.
Figure 42. Maximum Power Dissipation vs Free-Air Temperature
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SLOS270F – MARCH 2001 – REVISED AUGUST 2016
12 Device and Documentation Support
12.1 Documentation Support
12.1.1 Related Documentation
For related documentation see the following:
EVM Selection Guide (SLOU060)
12.2 Related Links
The table below lists quick access links. Categories include technical documents, support and community
resources, tools and software, and quick access to sample or buy.
Table 4. Related Links
PARTS
PRODUCT FOLDER
SAMPLE & BUY
TECHNICAL
DOCUMENTS
TOOLS &
SOFTWARE
SUPPORT &
COMMUNITY
TLV2370
Click here
Click here
Click here
Click here
Click here
TLV2371
Click here
Click here
Click here
Click here
Click here
TLV2372
Click here
Click here
Click here
Click here
Click here
TLV2373
Click here
Click here
Click here
Click here
Click here
TLV2374
Click here
Click here
Click here
Click here
Click here
TLV2375
Click here
Click here
Click here
Click here
Click here
12.3 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
12.4 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
12.5 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
12.6 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
12.7 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
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www.ti.com
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
www.ti.com
14-Oct-2022
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
TLV2370ID
ACTIVE
SOIC
D
8
75
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
2370I
Samples
TLV2370IDBVR
ACTIVE
SOT-23
DBV
6
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
VBFI
Samples
TLV2370IDBVRG4
ACTIVE
SOT-23
DBV
6
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
VBFI
Samples
TLV2370IDBVT
ACTIVE
SOT-23
DBV
6
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
VBFI
Samples
TLV2370IDBVTG4
ACTIVE
SOT-23
DBV
6
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
VBFI
Samples
TLV2370IDR
ACTIVE
SOIC
D
8
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
2370I
Samples
TLV2370IP
ACTIVE
PDIP
P
8
50
RoHS & Green
NIPDAU
N / A for Pkg Type
-40 to 125
2370I
Samples
TLV2371ID
ACTIVE
SOIC
D
8
75
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
2371I
Samples
TLV2371IDBVR
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
VBGI
Samples
TLV2371IDBVRG4
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
VBGI
Samples
TLV2371IDBVT
ACTIVE
SOT-23
DBV
5
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
VBGI
Samples
TLV2371IDBVTG4
ACTIVE
SOT-23
DBV
5
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
VBGI
Samples
TLV2371IDG4
ACTIVE
SOIC
D
8
75
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
2371I
Samples
TLV2371IDR
ACTIVE
SOIC
D
8
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
2371I
Samples
TLV2371IDRG4
ACTIVE
SOIC
D
8
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
2371I
Samples
TLV2371IP
ACTIVE
PDIP
P
8
50
RoHS & Green
NIPDAU
N / A for Pkg Type
-40 to 125
2371I
Samples
TLV2371IPE4
ACTIVE
PDIP
P
8
50
RoHS & Green
NIPDAU
N / A for Pkg Type
-40 to 125
2371I
Samples
TLV2372ID
ACTIVE
SOIC
D
8
75
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
2372I
Samples
TLV2372IDGK
ACTIVE
VSSOP
DGK
8
80
RoHS & Green NIPDAU | NIPDAUAG
Level-1-260C-UNLIM
-40 to 125
APG
Samples
TLV2372IDGKG4
ACTIVE
VSSOP
DGK
8
80
RoHS & Green
Level-1-260C-UNLIM
-40 to 125
APG
Samples
Addendum-Page 1
NIPDAU
PACKAGE OPTION ADDENDUM
www.ti.com
14-Oct-2022
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
TLV2372IDGKR
ACTIVE
VSSOP
DGK
8
2500
RoHS & Green NIPDAU | NIPDAUAG
Level-1-260C-UNLIM
-40 to 125
APG
Samples
TLV2372IDGKRG4
ACTIVE
VSSOP
DGK
8
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
APG
Samples
TLV2372IDR
ACTIVE
SOIC
D
8
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
2372I
Samples
TLV2372IDRG4
ACTIVE
SOIC
D
8
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
2372I
Samples
TLV2372IP
ACTIVE
PDIP
P
8
50
RoHS & Green
NIPDAU
N / A for Pkg Type
-40 to 125
2372I
Samples
TLV2372IPE4
ACTIVE
PDIP
P
8
50
RoHS & Green
NIPDAU
N / A for Pkg Type
-40 to 125
2372I
Samples
TLV2373ID
ACTIVE
SOIC
D
14
50
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
2373I
Samples
TLV2373IDGS
ACTIVE
VSSOP
DGS
10
80
RoHS & Green NIPDAU | NIPDAUAG
Level-1-260C-UNLIM
-40 to 125
API
Samples
TLV2373IDGSR
ACTIVE
VSSOP
DGS
10
2500
RoHS & Green NIPDAU | NIPDAUAG
Level-1-260C-UNLIM
-40 to 125
API
Samples
TLV2373IDGSRG4
ACTIVE
VSSOP
DGS
10
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
API
Samples
TLV2373IDR
ACTIVE
SOIC
D
14
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
2373I
Samples
TLV2373IN
ACTIVE
PDIP
N
14
25
RoHS & Green
NIPDAU
N / A for Pkg Type
-40 to 125
TLV2373I
Samples
TLV2374ID
ACTIVE
SOIC
D
14
50
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
2374I
Samples
TLV2374IDG4
ACTIVE
SOIC
D
14
50
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
2374I
Samples
TLV2374IDR
ACTIVE
SOIC
D
14
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
2374I
Samples
TLV2374IN
ACTIVE
PDIP
N
14
25
RoHS & Green
NIPDAU
N / A for Pkg Type
-40 to 125
2374I
Samples
TLV2374IPW
ACTIVE
TSSOP
PW
14
90
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
2374I
Samples
TLV2374IPWG4
ACTIVE
TSSOP
PW
14
90
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
2374I
Samples
TLV2374IPWR
ACTIVE
TSSOP
PW
14
2000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
2374I
Samples
TLV2374IPWRG4
ACTIVE
TSSOP
PW
14
2000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
2374I
Samples
TLV2375ID
ACTIVE
SOIC
D
16
40
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
2375I
Samples
Addendum-Page 2
PACKAGE OPTION ADDENDUM
www.ti.com
14-Oct-2022
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
TLV2375IDR
ACTIVE
SOIC
D
16
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
2375I
Samples
TLV2375IN
ACTIVE
PDIP
N
16
25
RoHS & Green
NIPDAU
N / A for Pkg Type
-40 to 125
2375I
Samples
TLV2375IPW
ACTIVE
TSSOP
PW
16
90
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
2375I
Samples
TLV2375IPWR
ACTIVE
TSSOP
PW
16
2000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
2375I
Samples
TLV2375IPWRG4
ACTIVE
TSSOP
PW
16
2000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
2375I
Samples
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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