TLV2422QDRG4Q1


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   SGLS175A − AUGUST 2003 − REVISED APRIL 2008 D Qualified for Automotive Applications D ESD Protection Exceeds 2000 V Per D D D D D D description 1OUT 1IN − 1IN + VDD − /GND 1 8 2 7 3 6 4 5 VDD + 2OUT 2IN − 2IN + HIGH-LEVEL OUTPUT VOLTAGE vs HIGH-LEVEL OUTPUT CURRENT 5 VDD = 5 V VOH − High-Level Output Voltage − V D D MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Output Swing Includes Both Supply Rails Extended Common-Mode Input Voltage Range . . . 0 V to 4.5 V (Min) With 5-V Single Supply No Phase Inversion Low Noise . . . 18 nV/√Hz Typ at f = 1 kHz Low Input Offset Voltage 950 µV Max at TA = 25°C (TLV2422A) Low Input Bias Current . . . 1 pA Typ Micropower Operation . . . 50 µA Per Channel 600-Ω Output Drive D PACKAGE (TOP VIEW) 4 TA = −40°C TA = 25°C 3 The TLV2422 and TLV2422A are dual low-voltage operational amplifiers from Texas Instruments. 2 TA = 85°C The common-mode input voltage range for this device has been extended over the typical CMOS amplifiers making them suitable for a wide range 1 of applications. In addition, the devices do not TA = 125°C phase invert when the common-mode input is driven to the supply rails. This satisfies most 0 4 8 12 16 20 24 28 32 36 40 0 design requirements without paying a premium for rail-to-rail input performance. They also exhibit IOH − High-Level Output Current − mA rail-to-rail output performance for increased Figure 1 dynamic range in single- or split-supply applications. This family is fully characterized at 3-V and 5-V supplies and is optimized for low-voltage operation. The TLV2422 only requires 50 µA of supply current per channel, making it ideal for battery-powered applications. The TLV2422 also has increased output drive over previous rail-to-rail operational amplifiers and can drive 600-Ω loads for telecom applications. Other members in the TLV2422 family are the high-power, TLV2442, and low-power, TLV2432, versions. The TLV2422, exhibiting high input impedance and low noise, is excellent for small-signal conditioning for high-impedance sources, such as piezoelectric transducers. Because of the micropower dissipation levels and low-voltage operation, these devices work well in hand-held monitoring and remote-sensing applications. In addition, the rail-to-rail output feature with single- or split-supplies makes this family a great choice when interfacing with analog-to-digital converters (ADCs). For precision applications, the TLV2422A is available with a maximum input offset voltage of 950 µV. If the design requires single operational amplifiers, see the TI TLV2211/21/31. This is a family of rail-to-rail output operational amplifiers in the SOT-23 package. Their small size and low power consumption, make them ideal for high density, battery-powered equipment. Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. Advanced LinCMOS is a trademark of Texas Instruments. Copyright  2008, Texas Instruments Incorporated 
 
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   SGLS175A − AUGUST 2003 − REVISED APRIL 2008 ORDERING INFORMATION{ TA −40°C to 125°C VIOmax AT 25°C 950 µV PACKAGE} SOIC (D) Tape and reel ORDERABLE PART NUMBER TLV2422AQDRQ1 TOP-SIDE MARKING 2422AQ 2.5 mV SOIC (D) Tape and reel TLV2422QDRQ1 2422Q1 † For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI web site at http://www.ti.com. ‡ Package drawings, thermal data, and symbolization are available at http://www.ti.com/packaging. 2 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 VB2 IN+ IN− VB1 Q2 R1 Q1 Q23 Q22 Q4 Q3 R9 R2 Q5 Q7 Q6 VB3 R3 Q25 Q24 equivalent schematic (each amplifier) Q9 Q8 R4 Q27 Q26 Q12 Q11 VB4 Q10 C1 Q13 D1 Q30 Q29 Q14 VB3 Q17 Q16 Q15 Q33 Q32 Q31 Q19 R6 R5 Q18 R10 Q35 Q34 Q37 C3 C2 VB2 Q36 R8 Q21 Q20 R7 VB4 OUT VDD−/GND VDD+ Transistors Diodes Resistors Capacitors 69 5 26 6 COMPONENT COUNT
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   2 SGLS175 − AUGUST 2003 absolute maximum ratings over operating free-air temperature range (unless otherwise noted)† Supply voltage, VDD (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 V Differential input voltage, VID (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± VDD Input voltage, VI (any input, see Note 1): C and I suffix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.3 V to VDD Input current, II (each input) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 5 mA Output current, IO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 50 mA Total current into VDD + . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 50 mA Total current out of VDD − . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 50 mA Duration of short-circuit current at (or below) 25°C (see Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . unlimited Continuous total power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Dissipation Rating Table Operating free-air temperature range, TA: Q suffix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40°C to 125°C Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65°C to 150°C Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C † Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTES: 1. All voltage values, except differential voltages, are with respect to the midpoint between VDD+ and VDD − . 2. Differential voltages are at IN+ with respect to IN −. Excessive current flows if input is brought below VDD − − 0.3 V. 3. The output may be shorted to either supply. Temperature and/or supply voltages must be limited to ensure that the maximum dissipation rating is not exceeded. DISSIPATION RATING TABLE PACKAGE TA ≤ 25°C 25 C POWER RATING DERATING FACTOR ABOVE TA = 25°C TA = 70 70°C C POWER RATING TA = 85 85°C C POWER RATING TA = 125 125°C C POWER RATING D 725 mW 5.8 mW/°C 464 mW 377 mW 145 mW recommended operating conditions MIN MAX Supply voltage, VDD ± 2.7 10 V Input voltage range, VI VDD − VDD − VDD + − 0.8 VDD + − 0.8 V Common-mode input voltage, VIC Operating free-air temperature, TA −40 4 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 125 UNIT V °C 

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   2 SGLS175 − AUGUST 2003 electrical characteristics at specified free-air temperature, VDD = 3 V (unless otherwise noted) PARAMETER TA† TEST CONDITIONS TLV2422-Q1 MIN 25°C VIO Input offset voltage αVIO Temperature coefficient of input offset voltage Input offset voltage long-term drift (see Note 4) IIO Input offset current IIB Input bias current VOH VOL Common-mode input voltage range High-level output voltage Low-level output voltage 300 2000 VIC = 0, 0.003 0.003 µV/mo 25°C 0.5 1 VIC = 0, IOL = 250 µA A 0.5 60 Full range 0 to 2.2 −0.25 to 2.75 1 300 0 to 2.5 2.97 25°C 2.75 −0.25 to 2.75 V 2.75 0.05 25°C 0.2 Full range 0.05 0.2 0.5 2 V 2.5 25°C 6 pA 2.97 2.5 25°C pA 60 0 to 2.2 25°C Full range 60 150 300 0 to 2.5 Full range 60 150 25°C IOL = 100 µA µV V 25°C RS = 50 Ω IOH = − 500 µA A 950 1800 UNIT µV/°C V/°C Full range IOH = − 100 µA 300 MAX 2 Full range |VIO| ≤ 5 mV, TYP 2 Full range VDD ± = ± 1.5 V, RS = 50 Ω MIN 2500 25°C VICR MAX Full range VIC = 0, VO = 0, TLV2422A-Q1 TYP 10 V 0.5 6 10 AVD Large-signal differential voltage amplification 25°C 700 700 ri(d) Differential input resistance 25°C 1012 1012 Ω ri(c) Common-mode input resistance 25°C 1012 1012 Ω ci(c) Common-mode input capacitance f = 10 kHz 25°C 8 8 pF zo Closed-loop output impedance f = 100 kHz, 25°C 130 130 Ω CMRR Common-mode rejection ratio VIC = VICR min, VO = 1.5 V, RS = 50 Ω kSVR Supply-voltage rejection ratio (∆VDD/∆VIO) VDD = 2.7 V to 8 V, VIC = VDD /2, No load IDD Supply current VO = 1.5 V, RL = 10 kΩ‡ VIC = 1.5 V, VO = 1 V to 2 V RL = 1 MΩ‡ AV = 10 No load 25°C 70 Full range 70 25°C 80 Full range 80 2 83 70 V/mV 83 dB 70 95 80 95 dB 25°C Full range 80 100 150 175 100 150 175 µA † Full range is − 40°C to 125°C for Q level part. ‡ Referenced to 1.5 V NOTE 4: Typical values are based on the input offset voltage shift observed through 500 hours of operating life test at TA = 150°C extrapolated to TA = 25°C using the Arrhenius equation and assuming an activation energy of 0.96 eV. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 5 

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   2 SGLS175 − AUGUST 2003 operating characteristics at specified free-air temperature, VDD = 3 V PARAMETER TEST CONDITIONS VO = 1.1 V to 1.9 V, CL = 100 pF‡ SR Slew rate at unity gain Vn Equivalent input noise voltage VN(PP) Peak-to-peak equivalent input noise voltage In Equivalent input noise current THD + N ts φm 6 25°C 0.01 0.02 Full range 0.008 100 23 f = 0.1 Hz to 1 Hz 25°C 2.7 f = 0.1 Hz to 10 Hz 25°C 4 25°C 0.6 AV = 1, CL = 100 pF‡ Settling time AV = − 1, Step = 0.5 V to 2.5 V, RL = 10 kΩ‡, CL = 100 pF‡ RL = 10 kΩ‡, POST OFFICE BOX 655303 UNIT MAX V/µs 25°C VO(PP) = 1 V, RL = 10 kΩ‡, Gain margin † Full range is − 40°C to 125°C for Q level part. ‡ Referenced to 1.5 V TYP 25°C Maximum output-swing bandwidth Phase margin at unity gain MIN f = 1 kHz AV = 1 Total harmonic distortion plus noise TLV2422-Q1, TLV2422A-Q1 f = 10 Hz VO = 0.5 V to 2.5 V, f = 1 kHz, RL = 10 kΩ‡ f = 10 kHz, CL = 100 pF‡ Gain-bandwidth product BOM RL = 10 kΩ‡, TA† nV/√Hz µV V fA√Hz 0.25% 25°C AV = 10 RL = 10 kΩ‡, 1.8% 25°C 46 kHz 25°C 8.3 kHz To 0.1% 8.6 µss 25°C To 0.01% CL = 100 pF‡ • DALLAS, TEXAS 75265 16 25°C 62° 25°C 11 dB 

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   2 SGLS175 − AUGUST 2003 electrical characteristics at specified free-air temperature, VDD = 5 V (unless otherwise noted) PARAMETER TA† TEST CONDITIONS TLV2422-Q1 MIN 25°C VIO Input offset voltage αVIO Temperature coefficient of input offset voltage Input offset voltage long-term drift (see Note 4) IIO Input offset current IIB Input bias current VOH VOL Common-mode input voltage range High-level output voltage Low-level output voltage 300 2000 VIC = 2.5 V, 0.003 0.003 µV/mo 25°C 0.5 1 VIC = 2.5 V, IOL = 500 µA A 0.5 60 Full range 0 to 4.2 −0.25 to 4.75 1 300 0 to 4.5 4.97 25°C 4.75 −0.25 to 4.75 V 4.75 0.04 25°C 0.15 Full range 0.04 0.15 0.5 3 V 4.5 25°C 8 pA 4.97 4.5 25°C pA 60 0 to 4.2 25°C Full range 60 150 300 0 to 4.5 Full range 60 150 25°C IOL = 100 µA µV V 25°C RS = 50 Ω IOH = − 1 mA 950 1800 UNIT µV/°C V/°C Full range IOH = − 100 µA 300 MAX 2 Full range |VIO| ≤ 5 mV, TYP 2 Full range VDD ± = ± 2.5 V, RS = 50 Ω MIN 2500 25°C VICR MAX Full range VIC = 0, VO = 0, TLV2422A-Q1 TYP 12 V 0.5 8 12 AVD Large-signal differential voltage amplification 25°C 1000 1000 ri(d) Differential input resistance 25°C 1012 1012 Ω ri(c) Common-mode input resistance 25°C 1012 1012 Ω ci(c) Common-mode input capacitance f = 10 kHz 25°C 8 8 pF zo Closed-loop output impedance f = 100 kHz, 25°C 130 130 Ω CMRR Common-mode rejection ratio VIC = VICR min, VO = 2.5 V, RS = 50 Ω kSVR Supply-voltage rejection ratio (∆VDD/∆VIO) VDD = 4.4 V to 8 V, VIC = VDD /2, No load IDD Supply current VO = 2.5 V, RL = 10 kΩ‡ VIC = 2.5 V, VO = 1 V to 4 V RL = 1 MΩ‡ AV = 10 No load 25°C 70 Full range 70 25°C 80 Full range 80 3 90 70 V/mV 90 dB 70 95 80 95 dB 25°C Full range 80 100 150 175 100 150 175 µA † Full range is − 40°C to 125°C for Q level part. ‡ Referenced to 2.5 V NOTE 4: Typical values are based on the input offset voltage shift observed through 500 hours of operating life test at TA = 150°C extrapolated to TA = 25°C using the Arrhenius equation and assuming an activation energy of 0.96 eV. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 7 

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   2 SGLS175 − AUGUST 2003 operating characteristics at specified free-air temperature, VDD = 5 V PARAMETER SR TEST CONDITIONS VO = 1.5 V to 3.5 V, CL = 100 pF‡ Slew rate at unity gain Vn Equivalent input noise voltage VN(PP) Peak-to-peak equivalent input noise voltage In Equivalent input noise current THD + N Total harmonic distortion plus noise BOM ts φm RL = 10 kΩ‡, TYP 25°C 0.01 0.02 Full range 0.008 f = 1 kHz 25°C 18 f = 0.1 Hz to 1 Hz 25°C 1.9 f = 0.1 Hz to 10 Hz 25°C 2.8 25°C 0.6 Gain-bandwidth product f = 10 kHz, CL = 100 pF‡ RL =10 kΩ‡, Maximum output-swing bandwidth VO(PP) = 2 V, RL = 10 kΩ‡, AV = 1, CL = 100 pF‡ Settling time AV = − 1, Step = 1.5 V to 3.5 V, RL = 10 kΩ‡, CL = 100 pF‡ RL = 10 kΩ‡, POST OFFICE BOX 655303 UNIT MAX V/µs 100 nV/√Hz µV V fA√Hz 0.24% 25°C AV = 10 1.7% 25°C 52 kHz 25°C 5.3 kHz To 0.1% 8.5 µss 25°C To 0.01% CL = 100 pF‡ † Full range is − 40°C to 125°C for Q level part. ‡ Referenced to 2.5 V 8 MIN 25°C AV = 1 Gain margin TLV2422-Q1, TLV2422A-Q1 f = 10 Hz VO = 1.5 V to 3.5 V, f = 1 kHz, RL = 10 kΩ‡ Phase margin at unity gain TA† • DALLAS, TEXAS 75265 15.5 25°C 66° 25°C 11 dB 

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   2 SGLS175 − AUGUST 2003 TYPICAL CHARACTERISTICS Table of Graphs FIGURE VIO Input offset voltage Distribution vs Common-mode input voltage 2,3 4,5 αVIO IIB/IIO Input offset voltage temperature coefficient Distribution 6,7 Input bias and input offset currents vs Free-air temperature VOH VOL High-level output voltage vs High-level output current 9,11 Low-level output voltage vs Low-level output current 10,12 VO(PP) Maximum peak-to-peak output voltage vs Frequency 13 IOS Short-circuit output current vs Supply voltage vs Free-air temperature 14 15 VID Differential input voltage vs Output voltage 16,17 Differential gain vs Load resistance 18 Large-signal differential voltage amplification 8 AVD Differential voltage amplification vs Frequency vs Free-air temperature 19,20 21,22 zo Output impedance vs Frequency 23,24 CMRR Common-mode rejection ratio vs Frequency vs Free-air temperature 25 26 kSVR Supply-voltage rejection ratio vs Frequency vs Free-air temperature 27,28 29 IDD Supply current vs Supply voltage 30 SR Slew rate vs Load capacitance vs Free-air temperature 31 32 VO VO Inverting large-signal pulse response 33,34 Voltage-follower large-signal pulse response 35,36 VO VO Inverting small-signal pulse response 37,38 Voltage-follower small-signal pulse response 39,40 Vn Equivalent input noise voltage vs Frequency Noise voltage (referred to input) Over a 10-second period Total harmonic distortion plus noise vs Frequency Gain-bandwidth product vs Supply voltage vs Free-air temperature Phase margin vs Frequency vs Load capacitance 19,20 48 Gain margin vs Load capacitance 49 Unity-gain bandwidth vs Load capacitance 50 THD + N φm B1 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 41, 42 43 44,45 46 47 9 

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   2 SGLS175 − AUGUST 2003 TYPICAL CHARACTERISTICS DISTRIBUTION OF TLV2422 INPUT OFFSET VOLTAGE DISTRIBUTION OF TLV2422 INPUT OFFSET VOLTAGE 20 18 Percentage of Amplifiers − % 16 14 Percentage of Amplifiers − % 452 Amplifiers from 1 Wafer Lot VDD = 3 V RL = 10 kΩ TA = 25°C 12 10 8 6 4 454 Amplifiers from 1 Wafer Lot VDD = 5 V RL = 10 kΩ TA = 25°C 15 10 5 2 0 0 −0.4 −0.3 −0.2 −0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 −0.4 −0.3 −0.2 −0.1 0 VIO − Input Offset Voltage − mV Figure 2 Figure 3 INPUT OFFSET VOLTAGE vs COMMON-MODE INPUT VOLTAGE INPUT OFFSET VOLTAGE vs COMMON-MODE INPUT VOLTAGE 2 2 VDD = 3 V VDD = 5 V 1.5 VIO − Input Offset Voltage − mV VIO − Input Offset Voltage − mV 1.5 1 0.5 0 −0.5 −1 −1.5 −2 −0.5 1 0.5 0 −0.5 −1 −1.5 0 0.5 1 1.5 2 2.5 3 VIC − Common-Mode Input Voltage − V −2 −0.5 0 0.5 1 1.5 2 2.5 Figure 5 POST OFFICE BOX 655303 3 3.5 4 4.5 VIC − Common-Mode Input Voltage − V Figure 4 10 0.1 0.2 0.3 0.4 0.5 0.6 VIO − Input Offset Voltage − mV • DALLAS, TEXAS 75265 5 

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   2 SGLS175 − AUGUST 2003 TYPICAL CHARACTERISTICS DISTRIBUTION OF TLV2422 INPUT OFFSET VOLTAGE TEMPERATURE COEFFICIENT DISTRIBUTION OF TLV2422 INPUT OFFSET VOLTAGE TEMPERATURE COEFFICIENT 25 32 Amplifiers From 1 Wafer Lot VDD = ± 1.5 V TA = 25°C to 125°C 20 15 10 5 0 −4 32 Amplifiers From 1 Wafer Lot VDD = ± 2.5 V TA = 25°C to 125°C 20 Percentage of Amplifiers − % Percentage of Amplifiers − % 25 2 3 −3 −2 −1 0 1 αVIO − Temperature Coefficient − µV / °C 15 10 5 0 4 −4 2 3 −3 −2 −1 0 1 αVIO − Temperature Coefficient − µV / °C Figure 7 HIGH-LEVEL OUTPUT VOLTAGE vs HIGH-LEVEL OUTPUT CURRENT INPUT BIAS AND INPUT OFFSET CURRENTS vs FREE-AIR TEMPERATURE 3 200 VDD = ± 2.5 V VDD = 3 V VOH − High-Level Output Voltage − V I IB and I IO − Input Bias and Input Offset Currents − pA Figure 6 4 160 120 IIB 80 40 2.5 TA = 85°C 2 TA = 0°C 1.5 TA = 125°C 1 TA = 25°C 0.5 IIO 0 −55 0 −40 0 25 70 85 125 TA − Free-Air Temperature − °C 0 3 6 9 12 15 IOH − High-Level Output Current − mA Figure 8 Figure 9 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 11 

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   2 SGLS175 − AUGUST 2003 TYPICAL CHARACTERISTICS LOW-LEVEL OUTPUT VOLTAGE vs LOW-LEVEL OUTPUT CURRENT HIGH-LEVEL OUTPUT VOLTAGE vs HIGH-LEVEL OUTPUT CURRENT 1.6 5 VDD = 3 V VDD = 5 V VOH − High-Level Output Voltage − V VOL − Low-Level Output Voltage − V 1.4 1.2 TA = 125°C 1 TA = 85°C 0.8 0.6 0.4 TA = 25°C 0.2 TA = −40°C 4 TA = 25°C 3 2 TA = 85°C 1 TA = 125°C TA = −40°C 0 0 1 2 3 4 0 5 0 IOL − Low-Level Output Current − mA 4 12 8 Figure 10 1 TA = 125°C 0.8 TA = 85°C 0.4 TA = 25°C TA = −40°C 0 1 2 3 4 5 VO(PP) − Maximum Peak-to-Peak Output Voltage − V VOH − High-Level Output Voltage − V VDD = 5 V 0 28 32 36 40 5 RL = 10 kΩ TA = 25°C VDD = 5 V 4 3 VDD = 3 V 2 1 0 102 IOL − Low-Level Output Current − mA 103 104 f − Frequency − Hz Figure 12 12 24 MAXIMUM PEAK-TO-PEAK OUTPUT VOLTAGE vs FREQUENCY 1.2 0.2 20 Figure 11 LOW-LEVEL OUTPUT VOLTAGE vs LOW-LEVEL OUTPUT CURRENT 0.6 16 IOH − High-Level Output Current − mA Figure 13 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 105 106 

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   2 SGLS175 − AUGUST 2003 TYPICAL CHARACTERISTICS SHORT-CIRCUIT OUTPUT CURRENT vs SUPPLY VOLTAGE SHORT-CIRCUIT OUTPUT CURRENT vs FREE-AIR TEMPERATURE 8 30 VO = VDD/2 VIC = VDD/2 TA = 25°C 20 VID = −100 mV I OS − Short-Circuit Output Current − mA I OS − Short-Circuit Output Current − mA 25 15 10 5 0 −5 −10 −15 −20 −25 −30 2 3 4 5 6 7 8 9 6 4 2 VDD = 5 V 0 −2 −4 −6 VID = 100 mV −8 −55 10 −40 Figure 14 85 125 DIFFERENTIAL INPUT VOLTAGE vs OUTPUT VOLTAGE 1000 1000 VDD = 3 V RL = 10 kΩ TA = 25°C 800 VID − Differential Input Voltage − µV VID − Differential Input Voltage − µV 70 Figure 15 DIFFERENTIAL INPUT VOLTAGE vs OUTPUT VOLTAGE 800 25 0 TA − Free-Air Temperature − °C VDD − Supply Voltage − V 600 400 200 0 −200 −400 −600 −800 600 VDD = 5 V RL = 10 kΩ TA = 25°C 400 200 0 −200 −400 −600 −800 −1000 0 0.5 1 1.5 2 2.5 3 −1000 0 VO − Output Voltage − V 1 2 3 4 5 VO − Output Voltage − V Figure 16 Figure 17 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 13 

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   SGLS175 − AUGUST 2003 TYPICAL CHARACTERISTICS DIFFERENTIAL GAIN vs LOAD RESISTANCE 10000 Differential Gain − V/mV 1000 VID = 5 V VID = 3 V 100 10 1 10 100 1000 RL − Load Resistance − kΩ Figure 18 LARGE-SIGNAL DIFFERENTIAL VOLTAGE AMPLIFICATION AND PHASE MARGIN vs FREQUENCY 50 AVD − Large-Signal Differential Voltage Amplification − dB 30 135 20 PHASE 90 10 45 0 GAIN −10 0 −20 −30 −45 −40 −50 103 104 105 f − Frequency − Hz Figure 19 14 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 −90 106 φ m − Phase Margin − ° 40 180 VDD = 3 V RL = 10 kΩ CL = 100 pF 2 

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   2 SGLS175 − AUGUST 2003 TYPICAL CHARACTERISTICS LARGE-SIGNAL DIFFERENTIAL VOLTAGE AMPLIFICATION AND PHASE MARGIN vs FREQUENCY 60 180 VDD = 5 V RL = 10 kΩ CL = 100 pF AVD − Large-Signal Differential Voltage Amplification − dB 40 135 PHASE 30 90 20 45 10 0 GAIN −10 0 −20 φ m − Phase Margin − ° 50 −45 −30 −40 103 104 −90 106 105 f − Frequency − Hz Figure 20 DIFFERENTIAL VOLTAGE AMPLIFICATION vs FREE-AIR TEMPERATURE DIFFERENTIAL VOLTAGE AMPLIFICATION vs FREE-AIR TEMPERATURE 10000 VDD = 3 V AVD − Differential Voltage Amplication − V/mV AVD − Differential Voltage Amplication − V/mV 10000 RL = 1 MΩ 1000 100 RL = 10 kΩ 10 1 −75 −50 −25 0 25 50 75 100 125 VDD = 5 V RL = 1 MΩ 1000 100 RL = 10 kΩ 10 1 −75 −50 TA − Free-Air Temperature − °C −25 0 25 50 75 100 125 TA − Free-Air Temperature − °C Figure 21 Figure 22 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 15 

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   2 SGLS175 − AUGUST 2003 TYPICAL CHARACTERISTICS OUTPUT IMPEDANCE vs FREQUENCY OUTPUT IMPEDANCE vs FREQUENCY 1000 1000 AV = 100 AV = 10 z o − Output Impedance − Ω z o − Output Impedance − Ω AV = 100 100 AV = 1 10 AV = 10 100 AV = 1 10 VDD = 3 V TA = 25°C VDD = 5 V TA = 25°C 1 102 103 1 102 105 104 103 f − Frequency − Hz Figure 23 Figure 24 COMMON-MODE REJECTION RATIO vs FREQUENCY COMMON-MODE REJECTION RATIO vs FREE-AIR TEMPERATURE 94 TA = 25°C CMRR − Common-Mode Rejection Ratio − dB CMRR − Common-Mode Rejection Ratio − dB 100 80 60 VDD = 5 V 40 VDD = 3 V 20 0 102 103 104 105 106 93 92 VDD = 5 V 91 90 VDD = 3 V 89 88 87 86 85 84 −55 −40 f − Frequency − Hz 0 25 70 85 TA − Free-Air Temperature − °C Figure 25 16 105 104 f − Frequency − Hz Figure 26 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 125 

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   2 SGLS175 − AUGUST 2003 TYPICAL CHARACTERISTICS SUPPLY-VOLTAGE REJECTION RATIO vs FREQUENCY SUPPLY-VOLTAGE REJECTION RATIO vs FREQUENCY 120 VDD = 3 V TA = 25°C KSVR − Supply-Voltage Rejection Ratio − dB KSVR − Supply-Voltage Rejection Ratio − dB 120 100 KSVR+ 80 60 KSVR− 40 20 0 101 103 102 104 105 VDD = 5 V TA = 25°C 100 KSVR+ 80 60 KSVR− 40 20 0 101 106 103 102 f − Frequency − Hz Figure 27 105 106 Figure 28 SUPPLY-VOLTAGE REJECTION RATIO vs FREE-AIR TEMPERATURE SUPPLY CURRENT vs SUPPLY VOLTAGE 100 160 VDD = 2.7 V to 8 V VO = VDD/2 No Load 140 TA = −40°C 98 I DD − Supply Current − µ A k SVR − Supply-Voltage Rejection Ratio − dB 104 f − Frequency − Hz 96 94 TA = 25°C 120 100 TA = 85°C 80 60 40 92 20 90 −55 −40 0 25 70 85 125 0 0 1 2 TA − Free-Air Temperature − °C 3 4 5 6 7 8 9 10 VDD − Supply Voltage − V Figure 29 Figure 30 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 17 

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   2 SGLS175 − AUGUST 2003 TYPICAL CHARACTERISTICS SLEW RATE vs LOAD CAPACITANCE SLEW RATE vs FREE-AIR TEMPERATURE 0.03 0.025 30 VDD = 3 V AV = −1 TA = 25°C SR − Slew Rate − V/ms SR − Slew Rate − V/µs 25 SR− 0.02 SR+ 0.015 0.01 20 15 10 0.005 0 102 VDD = 5 V RL = 10 kΩ CL = 100 pF AV = 1 104 103 105 5 −55 106 −40 CL − Load Capacitance − pF 0 Figure 31 1500 3 1000 2 VO − Output Voltage − mV VO − Output Voltage − mV 4 500 0 −500 −2000 −1000 VDD = 3 V RL = 10 kΩ CL = 100 pF AV = −1 TA = 25°C −600 0 0 −1 −2 200 600 1000 −4 −1000 VDD = 5 V RL = 10 kΩ CL = 100 pF AV = −1 TA = 25°C −600 t − Time − µs −200 0 200 t − Time − µs Figure 34 Figure 33 18 125 1 −3 −200 85 INVERTING LARGE-SIGNAL PULSE RESPONSE 2000 −1500 70 Figure 32 INVERTING LARGE-SIGNAL PULSE RESPONSE −1000 25 TA − Free-Air Temperature − °C POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 600 1000 

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   2 SGLS175 − AUGUST 2003 TYPICAL CHARACTERISTICS VOLTAGE-FOLLOWER LARGE-SIGNAL PULSE RESPONSE VOLTAGE-FOLLOWER LARGE-SIGNAL PULSE RESPONSE 2000 1000 1500 VO − Output Voltage − mV VO − Output Voltage − mV 1500 2000 VDD = 3 V RL = 10 kΩ CL = 100 pF AV = 1 TA = 25°C 500 0 −500 −1000 −1500 1000 500 0 −500 −1000 −1500 −2000 −1000 −600 −200 0 200 600 VDD = 5 V RL = 10 kΩ CL = 100 pF AV = 1 TA = 25°C −2000 −1000 1000 −600 −200 t − Time − µs INVERTING SMALL-SIGNAL PULSE RESPONSE 300 VO − Output Voltage − mV VO − Output Voltage − mV 1000 400 VDD = 3 V RL = 10 kΩ CL = 100 pF AV = −1 TA = 25°C 100 0 −100 −200 −300 −400 −5 600 INVERTING SMALL-SIGNAL PULSE RESPONSE 400 200 200 Figure 36 Figure 35 300 0 t − Time − µs 200 VDD = 5 V RL = 10 kΩ CL = 100 pF AV = −1 TA = 25°C 100 0 −100 −200 −300 −4 −3 −2 −1 0 1 2 3 4 5 −400 −5 −4 t − Time − µs −3 −2 −1 0 1 2 3 4 5 t − Time − µs Figure 38 Figure 37 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 19 

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   2 SGLS175 − AUGUST 2003 TYPICAL CHARACTERISTICS VOLTAGE-FOLLOWER SMALL-SIGNAL PULSE RESPONSE VOLTAGE-FOLLOWER SMALL-SIGNAL PULSE RESPONSE 400 200 300 VO − Output Voltage − mV VO − Output Voltage − mV 300 400 VDD = 3 V RL = 10 kΩ CL = 100 pF AV = 1 TA = 25°C 100 0 −100 −200 −300 −400 −5 200 VDD = 5 V RL = 10 kΩ CL = 100 pF AV = 1 TA = 25°C 100 0 −100 −200 −300 −4 −3 −2 −1 0 1 2 3 4 −400 −5 5 −4 −3 −2 t − Time − µs 1 2 3 4 5 Figure 40 EQUIVALENT INPUT NOISE VOLTAGE vs FREQUENCY EQUIVALENT INPUT NOISE VOLTAGE vs FREQUENCY 120 120 VDD = 3 V TA = 25°C Vn − Equivalent Input Noise Voltage − nV/ Hz Vn − Equivalent Input Noise Voltage − nV/ Hz 0 t − Time − µs Figure 39 100 80 60 40 20 0 10 102 103 104 VDD = 5 V TA = 25°C 100 80 60 40 20 0 10 f − Frequency − Hz 102 103 f − Frequency − Hz Figure 41 20 −1 Figure 42 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 104 

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   2 SGLS175 − AUGUST 2003 TYPICAL CHARACTERISTICS NOISE VOLTAGE OVER A 10-SECOND PERIOD 1000 Over a 10 Second Period 800 600 VDD = 5 V f = 0.1 Hz to 10 Hz TA = 25°C Noise Voltage − nV 400 200 0 −200 −400 −600 −800 −1000 −1200 0 1 2 3 4 6 5 8 7 10 9 t − Time − s Figure 43 100 VDD = 3 V RL = 10 kΩ TA = 25°C 10 1 AV = 10 AV = 1 0.1 0.01 101 102 103 TOTAL HARMONIC DISTORTION PLUS NOISE vs FREQUENCY THD +N − Total Harmonic Distortion Plus Noise − % THD +N − Total Harmonic Distortion Plus Noise − % TOTAL HARMONIC DISTORTION PLUS NOISE vs FREQUENCY 104 105 100 VDD = 5 V RL = 10 kΩ TA = 25°C 10 1 AV = 10 AV = 1 0.1 0.01 0.001 101 102 103 f − Frequency − Hz f − Frequency − Hz Figure 44 Figure 45 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 104 105 21 

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   2 SGLS175 − AUGUST 2003 TYPICAL CHARACTERISTICS GAIN-BANDWIDTH PRODUCT vs SUPPLY VOLTAGE GAIN-BANDWIDTH PRODUCT vs FREE-AIR TEMPERATURE 80 80 RL = 10 kΩ CL = 100 pF f = 10 kHz TA = 25°C Gain-Bandwidth Product − kHz Gain-Bandwidth Product − kHz 70 VDD = 5 V RL = 10 kΩ CL = 100 pF f = 10 kHz 70 60 50 40 30 60 50 40 30 20 10 20 3 5 4 6 7 0 −50 8 0 −25 VDD − Supply Voltage − V 25 50 Figure 46 GAIN MARGIN vs LOAD CAPACITANCE 120 40 RL = 10 kΩ TA = 25°C Rnull = 500 100 RL = 10 kΩ TA = 25°C Rnull = 500 Rnull = 1000 30 80 Gain Margin − dB φ m − Phase Margin − ° 125 Figure 47 PHASE MARGIN vs LOAD CAPACITANCE 60 40 Rnull = 1000 Rnull = 200 20 Rnull = 100 Rnull = 200 10 Rnull = 100 20 Rnull = 0 Rnull = 0 0 10 102 103 104 105 0 10 CL − Load Capacitance − pF 102 103 Figure 49 POST OFFICE BOX 655303 104 CL − Load Capacitance − pF Figure 48 22 100 75 TA − Free-Air Temperature − °C • DALLAS, TEXAS 75265 105 

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   SGLS175 − AUGUST 2003 TYPICAL CHARACTERISTICS UNITY-GAIN BANDWIDTH vs LOAD CAPACITANCE 60 B1 − Unity-Gain Bandwidth − kHz 2 50 40 30 20 10 0 10 102 103 104 105 CL − Load Capacitance − pF Figure 50 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 23 PACKAGE OPTION ADDENDUM www.ti.com 10-Dec-2020 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) TLV2422QDRG4Q1 ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 2422Q1 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of