TLV3011-EP, TLV3012-EP
www.ti.com
SGLS349 – OCTOBER 2006
NANOPOWER 1.8-V SOT23 COMPARATORS WITH VOLTAGE REFERENCE
FEATURES
APPLICATIONS
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
(1)
Controlled Baseline
– One Assembly/Test Site
– One Fabrication Site
Extended Temperature Performance of
–55°C to 125°C
Enhanced Diminishing Manufacturing
Sources (DMS) Support
Enhanced Product-Change Notification
Qualification Pedigree(1)
Low Quiescent Current = 5 µA (Max)
Integrated Voltage Reference = 1.242 V
Input Common-Mode Range = 200 mV
Beyond Rails
Voltage Reference Initial Accuracy = 1%
Open-Drain Logic Compatible Output
(TLV3011)
Push-Pull Output (TLV3012)
Low Supply Voltage = 1.8 V to 5.5 V
Fast Response Time = 6-µs Propagation
Delay With 100-mV Overdrive
(TLV3011: RPULLUP = 10 kΩ)
Microsize Package: SOT23-6
Component qualification in accordance with JEDEC and
industry standards to ensure reliable operation over an
extended temperature range. This includes, but is not limited
to, Highly Accelerated Stress Test (HAST) or biased 85/85,
temperature cycle, autoclave or unbiased HAST,
electromigration, bond intermetallic life, and mold compound
life. Such qualification testing should not be viewed as
justifying use of this component beyond specified
performance and environmental limits.
Battery-Powered Level Detection
Data Acquisition
System Monitoring
Oscillators
Sensor Systems
– Smoke Detectors
– Light Sensors
– Alarms
DESCRIPTION
The TLV3011 and TLV3012 are low-power,
open-drain output comparators. The devices feature
an uncommitted on-chip voltage reference, have
5-µA (max) quiescent current, input common-mode
range 200 mV beyond the supply rails, and
single-supply operation from 1.8 V to 5.5 V. The
integrated 1.242-V series voltage reference offers
low 100-ppm/°C (max) drift, is stable with up to
10-nF capacitive load, and can provide up to
0.5 mA (typ) of output current.
The TLV3011 and TLV3012 are available in the tiny
SOT23-6 package for space-conservative designs.
The devices are specified for the temperature range
of –55°C to 125°C.
DBV PACKAGE
(TOP VIEW)
OUT
1
6
V+
V
2
5
REF
IN+
3
4
IN-
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2006, Texas Instruments Incorporated
TLV3011-EP, TLV3012-EP
www.ti.com
SGLS349 – OCTOBER 2006
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be
more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
PACKAGE ORDERING INFORMATION
TA
PACKAGE (1)
ORDERABLE PART NUMBER TOP SIDE MARKING
-55°C TO 125°C
DBV-SOT
TLV3011AMDBVREP
BTV
DBV-SOT
TLV3012AMDBVREP (2)
TBD
(1)
(2)
Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available at
www.ti.com/sc/package.
Product Preview
Pin Configurations
Top View
(1)
TLV3011AMDBV
V–
2
IN+
3
6
V+
5
4
OUT
1
REF
V–
2
IN–
IN+
3
SOT23-6
TBD
1
BTV
OUT
TLV3012AMDBV
6
V+
5
REF
4
IN–
SOT23-6
Note: Pin 1 is determined by orienting package marking as shown.
(1)
Product Preview
ABSOLUTE MAXIMUM RATINGS (1)
over operating free-air temperature range (unless otherwise noted)
MIN
Supply voltage
7
Voltage (2)
Signal input terminals
–0.5
(V+) +0.5
±10
Current (2)
Output short circuit (3)
UNIT
V
V
mA
Continous
Operating temperature range
–55
125
°C
Tstg
Storage temperature range
–65
150
°C
TJ
Junction temperature
150
°C
Lead ambient temperature (soldering, 10 s)
300
°C
2000
V
ESD rating (Human-Body Model)
(1)
(2)
(3)
2
MAX
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltage values are with respect to the network ground terminal.
Short circuit to ground
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SGLS349 – OCTOBER 2006
ELECTRICAL CHARACTERISTICS
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
0.5
15
UNIT
Offset Voltage
VOS
Input offset voltage
VCM = 0 V, IO = 0 V
dVOS/dT
Input offset voltage vs temperature
TA = –55°C to 125°C
±12
PSRR
Power supply rejection ratio
VS = 1.8 V to 5.5 V
100
mV
µV/°C
1000
µV/V
Input Bias Current
IS
Input bias current
VCM = VS/2
±10
pA
IOS
Input offset current
VCM = VS/2
±10
pA
Input Voltage Range
VCM
Common-mode voltage range
CMRR
(V–) – 0.2
Common-mode rejection ratio
(V+) + 0.2
VCM = –0.2 V to (V+) – 1.5 V
60
74
VCM = –0.2 V to (V+) + 0.2 V
54
62
V
dB
Input Impedance
Common mode
1013 2
Ω pF
Differential
1013 4
Ω pF
Switching Characteristics
Low to high
Propagation delay time
High to low
f = 10 kHz, VSTEP = 1 V,
input overdrive = 10 mV
12
f = 10 kHz, VSTEP = 1 V,
input overdrive = 100 mV
6
µs
f = 10 kHz, VSTEP = 1 V,
input overdrive = 10 mV
13.5
f = 10 kHz, VSTEP = 1 V,
input overdrive = 100 mV
6.5
TLV3011
See
(1)
tr
Rise time
CL = 10 pF
100
ns
tf
Fall time
CL = 10 pF
100
ns
Voltage output low from rail
VS = 5 V
160
200
mV
Voltage output high
from rail
TLV3012 (2)
IOUT = –5 mA
90
200
mV
Short-circuit current
TLV3012 (2)
IOUT = 5 mA
TLV3012 (2)
Output
VOL
See Typical Characteristics
Voltage Reference
VOUT
Output voltage
1.208
1.242
V
±1%
Initial accuracy
dVOUT/dT
1.276
–55°C ≤ TA ≤ 125°C
Temperature drift
Sourcing
0 mA < ISOURCE ≤ 0.5 mA
Sinking
0 mA < ISINK ≤ 0.5 mA
40
100
0.36
1
dVOUT/dILOAD
Load regulation
ILOAD
Output current
dVOUT/dVIN
Line regulation
1.8 V ≤ VIN ≤ 5.5 V
10
Reference voltage noise
f = 0.1 Hz to 10 Hz
0.2
6.6
0.5
ppm/°C
mV/mA
mA
100
µV/V
Noise
mVPP
Power Supply
VS
Specified voltage
1.8
Operating voltage range
IQ
(1)
(2)
Quiescent current
5.5
1.8
VS = 5 V, VO = High
2.8
V
5.5
V
5
µA
tr dependent on RPULLUP and CLOAD.
Product Preview
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ELECTRICAL CHARACTERISTICS (continued)
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Temperature
Operating range
–55
125
°C
Storage range
–65
150
°C
Thermal resistance
SOT23-6
°C/W
200
TYPICAL CHARACTERISTICS
QUIESCENT CURRENT
vs
OUTPUT SWITCHING FREQUENCY
3.8
8
3.6
7
Quiescent Current – µA
Quiescent Current – µA
QUIESCENT CURRENT
vs
TEMPERATURE
3.4
3.2
3
2.8
2.6
2.4
2.2
2
-50
6
0
25
50
75
Temperature – °C
5
4
3
VS = 1.8 V
2
1
100
1
125
10
100
1k
Output Transition Frequency – Hz
Figure 1.
Figure 2.
QUIESCENT CURRENT
vs
OUTPUT SWITCHING FREQUENCY
INPUT BIAS CURRENT
vs
TEMPERATURE
10k
45
TLV3012
VS = 5 V
10
VS = 3 V
8
6
4
VS = 1.8 V
2
40
Input Bias Current – pA
12
35
30
25
20
15
10
5
0
0
-5
1
10
100
1k
10k
Output Switching Frequency – Hz
100k
-50
Figure 3.
4
VS = 5 V
VS = 3 V
0
-25
14
Quiescent Current – µA
TLV3011
RPULLUP = 1 MΩ
-25
0
25
50
75
Temperature – °C
Figure 4.
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125
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SGLS349 – OCTOBER 2006
TYPICAL CHARACTERISTICS (continued)
OUTPUT LOW
vs
OUTPUT CURRENT
OUTPUT HIGH
vs
OUTPUT CURRENT
0.25
0.25
VS = 1.8 V
VS = 3 V
0.15
VS = 5 V
0.10
VDD = 1.8 V
0.15
0.10
VDD = 5 V
0.05
0.05
0
0
0
2
4
6
8
Output Current – mA
10
0
12
4
6
8
Output Current – mA
10
Figure 6.
PROPAGATION DELAY (tPLH)
vs
CAPACITIVE LOAD
PROPAGATION DELAY (tPHL)
vs
CAPACITIVE LOAD
12
80
TLV3012
tPHL – Propagation Delay – µs
tPLH – Propagation Delay – µs
2
Figure 5.
80
70
60
50
VS = 5 V
40
VS = 3 V
30
VS = 1.8 V
20
10
0
0.01
0.1
1
10
Capacitive Load – nF
100
70
60
50
VS = 3 V
1k
VS = 5 V
40
30
20
10
VS = 1.8 V
0
0.01
0.1
1
10
Capacitive Load – nF
100
Figure 7.
Figure 8.
PROPAGATION DELAY (tPLH)
vs
INPUT OVERDRIVE
PROPAGATION DELAY (tPHL)
vs
INPUT OVERDRIVE
1k
20
tPHL – Propagation Delay – µs
20
tPLH – Propagation Delay – µs
VDD = 3 V
0.20
0.20
(VS – VOH) – V
VOL – Output Low – V
TLV3012
18
16
VS = 5 V
14
12
VS = 3 V
10
VS = 1.8 V
8
6
4
18
16
14
12
VS = 1.8 V
10
VS = 3 V
8
6
VS = 5 V
4
0
10
20
30 40 50 60 70
Input Overdrive – mV
80
90 100
0
Figure 9.
10
20
30 40 50 60 70
Input Overdrive – mV
80
90 100
Figure 10.
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TYPICAL CHARACTERISTICS (continued)
PROPAGATION DELAY (tPLH)
vs
TEMPERATURE
PROPAGATION DELAY (tPHL)
vs
TEMPERATURE
8
tPHL – Propagation Delay – µs
7
6.5
VS = 1.8 V
VS = 3 V
6
5.5
5
VS = 5 V
4.5
4
-50
-25
0
25
50
75
Temperature – °C
100
VS = 3 V
6.5
6
5.5
VS = 5 V
5
4.5
4
-50
125
-25
VIN–
VIN+
2 V/div
TLV3011
VOUT
VS = 2.5 V
VIN+
VIN–
VOUT
2 µs/div
Figure 13.
Figure 14.
PROPAGATION DELAY (tPLH)
PROPAGATION DELAY (tPHL)
VS = 0.9 V
VIN–
2 V/div
500 mV/div
500 mV/div
100
PROPAGATION DELAY (tPHL)
VIN+
2 V/div
25
50
75
Temperature – °C
PROPAGATION DELAY (tPLH)
2 µs/div
VOUT
2 µs/div
VIN+
VS = 0.9 V
VIN–
VOUT
2 µs/div
Figure 15.
6
0
Figure 12.
TLV3012
2 V/div
VS = 1.8 V
7
Figure 11.
VS = 2.5 V
500 mV/div
7.5
500 mV/div
tPLH – Propagation Delay – µs
8
7.5
Figure 16.
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TYPICAL CHARACTERISTICS (continued)
REFERENCE VOLTAGE
vs
OUTPUT LOAD CURRENT (SINKING)
1.24205
1.250
1.24200
1.249
Reference Voltage – V
Reference Voltage – V
REFERENCE VOLTAGE
vs
OUTPUT LOAD CURRENT (SOURCING)
1.24195
1.24190
1.24185
1.24180
1.24175
1.24170
1.24165
1.248
1.247
1.246
1.245
1.244
1.243
1.242
1.24160
1.241
0
0.2
0.4
0.6
0.8
1
Output Load Current, Sourcing – mA
0
1.2
0.2
0.4
0.6
0.8
1
Output Load Current, Sinking – mA
Figure 17.
Figure 18.
REFERENCE VOLTAGE
vs
TEMPERATURE
SHORT-CIRCUIT CURRENT
vs
SUPPLY VOLTAGE
1.2
140
1.250
TLV3012
Short-Circuit Current – mA
1.240
1.235
1.230
1.225
1.220
1.215
120
100
Sink
80
60
Source
40
20
0
0
50
Temperature – °C
100
1.5
150
2
2.5
3
3.5
4
4.5
Supply Voltage – V
Figure 19.
5
5.5
Figure 20.
REFERENCE VOLTAGE DISTRIBUTION
500
450
400
350
300
250
200
150
100
1.252
1.254
1.250
1.246
1.248
1.242
1.244
1.238
1.240
1.234
0
1.236
50
1.230
-50
1.232
1.210
-100
Units
Reference Voltage – V
1.245
Reference Voltage – V
Figure 21.
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APPLICATION INFORMATION
The TLV3011 is a low-power, open-drain comparator with on-chip 1.242-V series reference. The open-drain
output allows multiple devices to be driven by a single pullup resistor to accomplish an OR function, making the
TLV3011 useful for logic applications.
The TLV3012 comparator with on-chip 1.242-V series reference has a push-pull output stage optimal for
reduced power budget applications and features no shoot-through current.
A typical supply current of 2.8 µA and small packaging combine with 1.8-V supply requirements to make the
TLV3011 and TLV3012 optimal for battery and portable designs.
Board Layout
Typical connections for the TLV3011 and TLV3012 are shown in Figure 22. The TLV3011 is an open-drain
output device. A pullup resistor must be connected between the comparator output and supply to enable
operation.
To minimize supply noise, power supplies should be capacitively decoupled by a 0.01-µF ceramic capacitor in
parallel with a 1-µF electrolytic capacitor. Comparators are sensitive to input noise and precautions such as
proper grounding (use of ground plane), supply bypassing, and guarding of high-impedance nodes minimize the
effects of noise and help to ensure specified performance.
V+
0.01 µF
VIN–
4
3
VIN+
6
TLV301x
5
REF
2
10 µF
1
RPULLUP
10 kΩ
(1)
VOUT
V-
(1) Use RPULLUP with the TLV3011 only.
Figure 22. Basic Connections of the TLV3011 and TLV3012
Open-Drain Output (TLV3011)
The open-drain output of the TLV3011 is useful in logic applications. The value of the pullup resistor and supply
voltage used affects current consumption due to additional current drawn when the output is in a low state. This
effect can be seen in Figure 3.
External Hysteresis
Comparator inputs have no noise immunity within the range of specified offset voltage (±12 mV). For noisy input
signals, the comparator output may display multiple switching as input signals move through the switching
threshold. The typical comparator threshold of the TLV3011 and TLV3012 is ±0.5 mV. To prevent multiple
switching within the comparator threshold of the TLV3011 or TLV3012, external hysteresis may be added by
connecting a small amount of feedback to the positive input. Figure 23 shows a typical topology used to
introduce hysteresis, described by this equation:
VHYST =
8
V+ × R1
R 1 + R2
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APPLICATION INFORMATION (continued)
V+
5V
(1)
RPULLUP
–
VIN
VOUT
TLV301x
+
REF
R1
39 kΩ
R2
560 kΩ
VHYST = 0.38 V
VREF
(1) Use RPULLUP with the TLV3011 only.
Figure 23. Adding Hysteresis
VHYST sets the value of the transition voltage required to switch the comparator output by increasing the
threshold region, thereby reducing sensitivity to noise.
Applications
Battery-Level Detect
The low power consumption and 1.8-V supply voltage of the TLV3011 make it an excellent candidate for
battery-powered applications. Figure 24 shows the TLV3011 configured as a low battery level detector for a 3-V
battery.
Battery Okay trip voltage = 1.242
R1 + R2
R2
R1
1 MΩ
RPULLUP(1)
+
+
–
TLV301x
–
R2
2 MΩ
1.242 V
Battery
Okay
REF
When the battery voltage drops below 1.9 V,
the Battery Okay output goes low.
(1) Use RPULLUP with the TLV3011 only.
Figure 24. TLV3011 Configured as Low Battery Level Detector
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APPLICATION INFORMATION (continued)
Power-On Reset
The reset circuit shown in Figure 25 provides a time-delayed release of reset to the MSP430 microcontroller.
Operation of the circuit is based on a stabilization time constant of the supply voltage, rather than on a
predetermined voltage value. The negative input is a reference voltage created by the internal voltage reference.
The positive input is an RC circuit that provides a power-up delay. When power is applied, the output of the
comparator is low, holding the processor in the reset condition. Only after allowing time for the supply voltage to
stabilize does the positive input of the comparator become higher than the negative input, resulting in a high
output state, releasing the processor for operation. The stabilization time required for the supply voltage is
adjustable by the selection of the RC component values. Use of a lower-valued resistor in this portion of the
circuit does not increase current consumption, because no current flows through the RC circuit after the supply
has stabilized.
V+
R1
1 MΩ
DI
(1)
RPULLUP
10 kΩ
MSP430
+
C1
10 nF
1.242 V
RESET
TLV301x
–
REF
(1) Use RPULLUP with the TLV3011 only.
Figure 25. TLV3011 or TLV3012 Configured as Power-Up Reset Circuit for the MSP430
The reset delay needed depends on the power-up characteristics of the system power supply. R1 and C1 are
selected to allow enough time for the power supply to stabilize. D1 provides rapid reset if power is lost. In this
example, the R1 × C1 time constant is 10 ms.
Relaxation Oscillator
The TLV3012 can be configured as a relaxation oscillator to provide a simple and inexpensive clock output (see
Figure 26). The capacitor is charged at a rate of T = 0.69RC and discharges at a rate of 0.69RC. Therefore, the
period is T = 1.38RC. R1 may be a different value than R2.
VC
2/3 (V+)
1/3 (V+)
V+
C
1000 pF
t
V+ T1 T2
R1
1 MΩ
VOUT
TLV3012
R2
1 MΩ
R2
1 MΩ
t
F = 724 Hz
V+
R2
1 MΩ
Figure 26. TLV3012 Configured as Relaxation Oscillator
10
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PACKAGE OPTION ADDENDUM
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10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
TLV3011AMDBVREP
ACTIVE
SOT-23
DBV
6
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-55 to 125
BTV
V62/07604-01XE
ACTIVE
SOT-23
DBV
6
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-55 to 125
BTV
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
