Sample &
Buy
Product
Folder
Support &
Community
Tools &
Software
Technical
Documents
Reference
Design
TLV3501, TLV3502
SBOS321E – MARCH 2005 – REVISED APRIL 2016
TLV350x 4.5-ns, Rail-to-Rail, High-Speed Comparator in Microsize Packages
1 Features
3 Description
•
•
•
•
•
•
The TLV350x family of push-pull output comparators
feature a fast 4.5-ns propagation delay and operation
from 2.7 V to 5.5 V. Beyond-the-rails input commonmode range makes it an ideal choice for low-voltage
applications. The rail-to-rail output directly drives
either CMOS or TTL logic.
1
•
High Speed: 4.5 ns
Rail-to-Rail I/O
Supply Voltage: 2.7 V to 5.5 V
Push-Pull CMOS Output Stage
Shutdown (TLV3501 Only)
Micro Packages: 6-Pin SOT-23 (Single), 8-Pin
SOT-23 (Dual)
Low Supply Current: 3.2 mA
Microsize packages provide options for portable and
space-restricted applications. The single (TLV3501) is
available in 6-pin SOT-23 and 8-pin SO packages.
The dual (TLV3502) comes in the 8-pin SOT-23 and
8-pin SO packages.
2 Applications
•
•
•
•
•
Device Information(1)
Automatic Test Equipment
Wireless Base Stations
Threshold Detectors
Zero-Crossing Detectors
Window Comparators
PART NUMBER
TLV3501
TLV3502
PACKAGE
BODY SIZE (NOM)
SOT-23 (6)
1.60 mm × 2.90 mm
SOIC (8)
3.91 mm × 4.90 mm
SOT-23 (8)
1.63 mm × 2.90 mm
SOIC (8)
3.91 mm × 4.90 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Propagation Delay vs Overdrive Voltage
9
VCM = 1V
VS = 5V
CLOAD = 17pF
Propagation Delay (ns)
8
Rise
7
6
Fall
5
4
3
0
20
40
60
80
100
Overdrive Voltage (mV)
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TLV3501, TLV3502
SBOS321E – MARCH 2005 – REVISED APRIL 2016
www.ti.com
Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
6.1
6.2
6.3
6.4
6.5
6.6
6.7
6.8
4
4
4
4
5
5
6
7
Absolute Maximum Ratings ......................................
ESD Ratings ............................................................
Recommended Operating Conditions.......................
Thermal Information: TLV3501 .................................
Thermal Information: TLV3502 .................................
Electrical Characteristics...........................................
Switching Characteristics ..........................................
Typical Characteristics ..............................................
Detailed Description ............................................ 10
7.1 Overview ................................................................. 10
7.2 Functional Block Diagram ....................................... 10
7.3 Feature Description................................................. 10
7.4 Device Functional Modes........................................ 11
8
Application and Implementation ........................ 12
8.1 Application Information............................................ 12
8.2 Typical Application .................................................. 12
9 Power Supply Recommendations...................... 15
10 Layout................................................................... 15
10.1 Layout Guidelines ................................................. 15
10.2 Layout Examples................................................... 16
11 Device and Documentation Support ................. 17
11.1
11.2
11.3
11.4
11.5
11.6
11.7
Device Support ....................................................
Documentation Support .......................................
Related Links ........................................................
Community Resource............................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
17
17
17
17
17
17
18
12 Mechanical, Packaging, and Orderable
Information ........................................................... 18
4 Revision History
Changes from Revision D (July 2005) to Revision E
Page
•
Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section .................................................................................................. 1
•
Deleted Removed Ordering Information table ........................................................................................................................ 1
2
Submit Documentation Feedback
Copyright © 2005–2016, Texas Instruments Incorporated
Product Folder Links: TLV3501 TLV3502
TLV3501, TLV3502
www.ti.com
SBOS321E – MARCH 2005 – REVISED APRIL 2016
5 Pin Configuration and Functions
TLV3501: DBV Package
6-Pin SOT-23
Top View
(1)
NXA
(1)
-IN
1
TLV3501: D Package
8-Pin SOIC
Top View
6
SHDN
(1)
NC
1
8
SHDN
V-
2
5
OUT
−IN
2
7
V+
+IN
3
4
V+
+IN
3
6
OUT
V−
4
5
NC
Pin 1 of the 6-pin SOT-23 is determined by
orienting the package marking as indicated
on the diagram.
(1)
(1)
NC indicates no internal connection.
Pin Functions: TLV3501
PIN
NAME
–IN
SOIC
SOT-23
2
1
I/O
DESCRIPTION
I
Negative (inverting) input
Positive (noninverting) input
+IN
3
3
I
NC
1, 5
—
—
No internal connection (can be left floating)
OUT
6
5
O
Output
SHDN
8
6
—
Shutdown (the device is idle when this pin is not in use)
V–
4
2
—
Negative (lowest) power supply
V+
7
4
—
Positive (highest) power supply
TLV3502: DCN and D Packages
8-Pin SOT-23 and SOIC
Top View
+IN A
1
8
V+
7
OUT A
6
OUT B
5
V−
A
−IN A
2
+IN B
3
−IN B
B
4
Pin Functions: TLV3502
PIN
I/O
DESCRIPTION
NAME
NO.
–IN A
2
I
Inverting input, channel A
+IN A
1
I
Noninverting input, channel A
–IN B
4
I
Inverting input, channel B
+IN B
3
I
Noninverting input, channel B
OUT A
7
O
Output, channel A
OUT B
6
O
Output, channel B
V–
5
—
Negative (lowest) power supply
V+
8
—
Positive (highest) power supply
Submit Documentation Feedback
Copyright © 2005–2016, Texas Instruments Incorporated
Product Folder Links: TLV3501 TLV3502
3
TLV3501, TLV3502
SBOS321E – MARCH 2005 – REVISED APRIL 2016
www.ti.com
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
MIN
Supply
Voltage
Signal input terminal
Current
(2)
(V−) − 0.3
(2)
(3)
V
(V+) + 0.3
V
10
mA
Output short circuit (3)
74
mA
125
°C
150
°C
150
°C
–40
Junction, TJ
Storage, Tstg
(1)
UNIT
5.5
Signal input terminal (2)
Operating, TA
Temperature
MAX
–65
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
Input terminals are diode-clamped to the power-supply rails. Input signals that can swing more than 0.3 V beyond the supply rails must
be current-limited to 10 mA or less.
Short-circuit to ground, one comparator per package.
6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
±3000
Charged-device model (CDM), per JEDEC specification JESD22-C101 (2)
±500
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted).
VS
Supply voltage
VIL
Low-level input voltage, SHDN (comparator is enabled) (1)
VIH
High-level input voltage, SHDN (comparator is disabled) (1)
TA
Operating temperature
(1)
MIN
NOM
2.2
2.7
MAX
UNIT
5.5
V
(V+) – 1.7
V
(V+) – 0.9
V
–40
125
°C
When the SHDN pin is within 0.9 V of the most positive supply, the part is disabled. When it is more than 1.7 V below the most positive
supply, the part is enabled.
6.4 Thermal Information: TLV3501
TLV3501
THERMAL METRIC (1)
DBV (SOT-23)
D (SOIC)
UNIT
6 PINS
8 PINS
RθJA
Junction-to-ambient thermal resistance
192.2
129.5
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
134.8
75.9
°C/W
RθJB
Junction-to-board thermal resistance
37.1
69.8
°C/W
ψJT
Junction-to-top characterization parameter
28.3
29.7
°C/W
ψJB
Junction-to-board characterization parameter
36.7
69.3
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
—
—
°C/W
(1)
4
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
Submit Documentation Feedback
Copyright © 2005–2016, Texas Instruments Incorporated
Product Folder Links: TLV3501 TLV3502
TLV3501, TLV3502
www.ti.com
SBOS321E – MARCH 2005 – REVISED APRIL 2016
6.5 Thermal Information: TLV3502
TLV3502
THERMAL METRIC (1)
D (SOIC)
DCN (SOT-23)
8 PINS
8 PINS
UNIT
191.6
°C/W
RθJA
Junction-to-ambient thermal resistance
116.4
RθJC(top)
Junction-to-case (top) thermal resistance
61.7
43.9
°C/W
RθJB
Junction-to-board thermal resistance
57
120.3
°C/W
ψJT
Junction-to-top characterization parameter
18.5
14.4
°C/W
ψJB
Junction-to-board characterization parameter
56.5
118.6
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
—
—
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
6.6 Electrical Characteristics
At TA = 25°C and VS = 2.7 V to 5.5 V, unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
±6.5
UNIT
OFFSET VOLTAGE
VOS
Input offset voltage (1)
VCM = 0 V, IO = 0 mA
±1
dVOS/dT
Input offset voltage vs temperature
TA = –40°C to +125°C
±5
PSRR
Input offset voltage vs power supply
VS = 2.7 V to 5.5 V
100
Input hysteresis
mV
μV/°C
400
6
μV/V
mV
INPUT BIAS CURRENT
IB
Input bias current (2)
VCM = VCC/2
±2
±10
pA
IOS
Input offset current (2) (3)
VCM = VCC/2
±2
±10
pA
(V+) − 0.2
V
INPUT VOLTAGE RANGE
VCM
(V−) − 0.2
Common-mode voltage range
CMRR
Common-mode rejection ratio
VCM = −0.2 V to (V+) + 0.2 V
57
VCM = −0.2 V to (V+) + 0.2 V,
TA = −40°C to +125°C
55
70
dB
INPUT IMPEDANCE
1013 || 2
Common-mode
13
Differential
10
Ω || pF
Ω || pF
|| 4
OUTPUT
VOH, VOL
Voltage output swing from rail
IOUT = ±1 mA
30
50
mV
SHUTDOWN
tOFF
Shutdown turnoff time
30
ns
tON
Shutdown turnon time
100
ns
(4)
VL
SHDN low threshold
Comparator is enabled
VH
SHDN high threshold
Comparator is disabled (4)
IQSD
(V+) − 1.7
V
(V+) − 0.9
V
Input bias current of shutdown pin
2
pA
Quiescent current in shutdown
2
µA
POWER SUPPLY
VS
Specified voltage
Operating voltage range
IQ
(1)
(2)
(3)
(4)
Quiescent current
2.7
5.5
Higher end
2.2
Lower end
5.5
VS = 5 V, VO = High
3.2
V
V
5
mA
VOS is defined as the average of the positive and the negative switching thresholds.
Not production tested.
The difference between IB+ and IB–.
When the shutdown pin is within 0.9 V of the most positive supply, the part is disabled. When it is more than 1.7 V below the most
positive supply, the part is enabled.
Submit Documentation Feedback
Copyright © 2005–2016, Texas Instruments Incorporated
Product Folder Links: TLV3501 TLV3502
5
TLV3501, TLV3502
SBOS321E – MARCH 2005 – REVISED APRIL 2016
www.ti.com
Electrical Characteristics (continued)
At TA = 25°C and VS = 2.7 V to 5.5 V, unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
TEMPERATURE RANGE
Specified range
–40
125
°C
Operating range
–40
125
°C
6.7 Switching Characteristics
At TA = 25°C and VS = 2.7 V to 5.5 V, unless otherwise noted.
PARAMETER
TEST CONDITIONS
ΔVIN = 100 mV,
Overdrive = 20 mV
Propagation delay time (1) (2)
T(pd)
ΔVIN = 100 mV,
Overdrive = 5 mV
At TA = 25°C
MIN
TYP
MAX
4.5
6.4
ns
7
ns
10
ns
12
ns
At TA = −40°C to
+125°C
At TA = 25°C
7.5
At TA = −40°C to
+125°C
UNIT
Δt(SKEW)
Propagation delay skew (3)
ΔVIN = 100 mV, overdrive = 20 mV
0.5
ns
fMAX
Maximum toggle frequency
Overdrive = 50 mV, VS = 5 V
80
MHz
tR
Rise time (4)
1.5
ns
1.5
ns
tF
(1)
(2)
(3)
(4)
6
Fall time
(4)
Not production tested.
Propagation delay cannot be accurately measured with low overdrive on automatic test equipment. This parameter is ensured by
characterization and testing at 100-mV overdrive.
The difference between the propagation delay going high and the propagation delay going low.
Measured between 10% of VS and 90% of VS.
Submit Documentation Feedback
Copyright © 2005–2016, Texas Instruments Incorporated
Product Folder Links: TLV3501 TLV3502
TLV3501, TLV3502
www.ti.com
SBOS321E – MARCH 2005 – REVISED APRIL 2016
6.8 Typical Characteristics
Input
0
VIN (V)
VIN (V)
At TA = 25°C, VS = 5 V, and input overdrive = 100 mV, unless otherwise noted.
Input
0
5
VOD = 100mV
3
2
VOD = 50mV
4
VOD = 20mV
3
VOUT (V)
VOUT (V)
VOD = 50mV
5
4
VOD = 5mV
1
0
VOD = 20mV
VOD = 100mV
VOD = 5mV
2
1
0
−1
−10
0
10
20
30
−1
−10
40
0
10
20
30
40
Time (ns)
Time (ns)
Figure 1. Output Response for Various Overdrive Voltages
(Rising)
Figure 2. Output Response for Various Overdrive Voltages
(Falling)
5.0
5.0
Propagation Delay (ns)
Propagation Delay (ns)
Fall
4.5
Rise
4.0
3.5
4.5
4.0
Fall
3.5
Rise
3.0
−40 −25
0
25
50
75
100
3.0
−40 −25
125
0
25
VOD = 20 mV
75
100
125
VOD = 50 mV
Figure 3. Propagation Delay vs Temperature
Figure 4. Propagation Delay vs Temperature
9
9
8
8
Propagation Delay (ns)
Propagation Delay (ns)
50
Temperature (°C)
Temperature (°C)
7
6
Fall
5
Rise
7
6
5
Fall
4
4
3
3
Rise
0
20
40
60
80
100
0
20
Capacitive Load (pF)
40
60
80
100
Capacitive Load (pF)
VOD = 20 mV
VOD = 50 mV
Figure 5. Propagation Delay vs Capacitive Load
Figure 6. Propagation Delay vs Capacitive Load
Submit Documentation Feedback
Copyright © 2005–2016, Texas Instruments Incorporated
Product Folder Links: TLV3501 TLV3502
7
TLV3501, TLV3502
SBOS321E – MARCH 2005 – REVISED APRIL 2016
www.ti.com
Typical Characteristics (continued)
At TA = 25°C, VS = 5 V, and input overdrive = 100 mV, unless otherwise noted.
9
110
Wake−Up Delay (ns)
Propagation Delay (ns)
8
7
6
5
90
70
Fall
4
Rise
3
2
3
4
5
50
−40 −25
6
0
25
VCM = 1 V
10
VIN (mV)
VIN (mV)
0
−10
125
500
0
−500
4
2
3
1
VOUT (V)
VOUT (V)
100
Figure 8. Wake-Up Delay vs Temperature
5
2
1
0
0
−1
−2
−1
0
20
40
60
80
0
100
2
4
6
8
VDD = 5 V
10
12
14
16
18
20
Time (ns)
Time (ns)
VIN = 20 mVPP
Figure 10. Response to 100-MHz Sine Wave (±2.5-V Dual
Supply into 50-Ω Oscilloscope Input)
Figure 9. Response to 50-MHz Sine Wave
4.0
4.0
3.8
3.8
3.6
3.6
Quiescent Current (mA)
Quiescent Current (mA)
75
VOD = 20 mV
Figure 7. Propagation Delay vs Supply Voltage
3.4
3.2
3.0
2.8
2.6
3.4
3.2
3.0
2.8
2.6
2.4
2.4
2.2
2.2
2.0
2.0
2
3
4
5
6
−40 −25
0
25
50
75
100
125
Temperature (°C)
Supply Voltage (V)
Figure 11. Quiescent Current vs Supply Voltage
8
50
Temperature (°C)
Supply Voltage (V)
Figure 12. Quiescent Current vs Temperature
Submit Documentation Feedback
Copyright © 2005–2016, Texas Instruments Incorporated
Product Folder Links: TLV3501 TLV3502
TLV3501, TLV3502
www.ti.com
SBOS321E – MARCH 2005 – REVISED APRIL 2016
Typical Characteristics (continued)
At TA = 25°C, VS = 5 V, and input overdrive = 100 mV, unless otherwise noted.
25
3.5
CLOAD = 50pF
Quiescent Current (mA)
Quiescent Current (mA)
3.0
2.5
2.0
5V
(from off to on)
2.7V
(from off to on)
1.5
5V
(from on to off)
1.0
2.7V
(from on to off)
0.5
20
CLOAD = 20pF
15
10
CLOAD = 10pF
5
CLOAD = 0.5pF
0
0
0
1
2
3
4
5
0
20
40
60
80
Shutdown Voltage (V)
Frequency (MHz)
Figure 13. Quiescent Current vs Shutdown Voltage
Figure 14. Quiescent Current vs Frequency
100
Submit Documentation Feedback
Copyright © 2005–2016, Texas Instruments Incorporated
Product Folder Links: TLV3501 TLV3502
9
TLV3501, TLV3502
SBOS321E – MARCH 2005 – REVISED APRIL 2016
www.ti.com
7 Detailed Description
7.1 Overview
The TLV3501 and TLV3502 devices both feature high-speed response and include 6 mV of internal hysteresis
for improved noise immunity with an input common-mode range that extends 0.2 V beyond the power-supply
rails.
7.2 Functional Block Diagram
V+
+IN
+
OUT
±IN
±
V±
Copyright © 2016, Texas Instruments Incorporated
7.3 Feature Description
7.3.1 Operating Voltage
The TLV350x comparators are specified for use on a single supply from 2.7 V to 5.5 V (or a dual supply from
±1.35 V to ±2.75 V) over a temperature range of −40°C to +125°C. These devices continue to function below this
range, but performance is not specified.
7.3.2 Input Overvoltage Protection
Device inputs are protected by electrostatic discharge (ESD) diodes that conduct if the input voltages exceed the
power supplies by more than approximately 300 mV. Momentary voltages greater than 300 mV beyond the
power supply can be tolerated if the input current is limited to 10 mA. This limiting is easily accomplished with a
small input resistor in series with the comparator, as shown in Figure 15.
VS
0.1µF
R
2.2µF
VIN
TLV3501
VOUT
VREF
Figure 15. Input Current Protection for Voltages Exceeding the Supply Voltage
10
Submit Documentation Feedback
Copyright © 2005–2016, Texas Instruments Incorporated
Product Folder Links: TLV3501 TLV3502
TLV3501, TLV3502
www.ti.com
SBOS321E – MARCH 2005 – REVISED APRIL 2016
7.4 Device Functional Modes
7.4.1 Shutdown
A shutdown pin allows the device to go into idle when it is not in use. When the shutdown pin is high, the device
draws approximately 2 μA, and the output goes to high impedance. When the shutdown pin is low, the TLV3501
is active. When the TLV3501 shutdown feature is not used, connect the shutdown pin to the most negative
supply, as shown in Figure 16. Exiting shutdown mode requires approximately 100 ns. The TLV3502 does not
have the shutdown feature.
VS
0.1µF
2.2µF
VIN
TLV3501
VOUT
VREF
Figure 16. Basic Connections for the TLV3501
Submit Documentation Feedback
Copyright © 2005–2016, Texas Instruments Incorporated
Product Folder Links: TLV3501 TLV3502
11
TLV3501, TLV3502
SBOS321E – MARCH 2005 – REVISED APRIL 2016
www.ti.com
8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
8.1.1 Adding External Hysteresis
The TLV350x has a robust performance when used with a good layout. However, comparator inputs have little
noise immunity within the range of a specified offset voltage (±5 mV). For slow-moving or noisy input signals, the
comparator output can cause an undesirable switch state as input signals move through the switching threshold.
In such applications, the 6 mV of internal hysteresis of the TLV350x might not be sufficient. For greater noise
immunity, external hysteresis can be added by connecting a small amount of feedback to the positive input.
Figure 17 shows a typical topology used to introduce 25 mV of additional hysteresis, for a total of 31-mV
hysteresis when operating from a single 5-V supply. Use Equation 1 to calculate the approximate total hysteresis.
( V + ) x R1
+ 6mV
V HYST =
R1 + R 2
(1)
The total hysteresis, VHYST, sets the value of the transition voltage required to switch the comparator output, by
enlarging the threshold region, thereby reducing sensitivity to noise.
VS = 5V
0.1µF
2.2µF
VIN
TLV3501
R1 = 51Ω
VOUT
R 2 = 10kΩ
VREF
Figure 17. Adding Hysteresis to the TLV350x
8.2 Typical Application
8.2.1 Relaxation Oscillator
The TLV350x can easily be configured as a simple and inexpensive relaxation oscillator. In Figure 18, the R2
network sets the trip threshold at 1/3 and 2/3 of the supply. Because this circuit is a high-speed circuit, the
resistor values are low to minimize the effects of parasitic capacitance. The positive input alternates between 1/3
of V+ and 2/3 of V+, depending on whether the output is low or high. The time to charge (or discharge) is 0.69 ×
R1C. Therefore, the period is 1.38 × R1C. For 62 pF and 1 kΩ as shown in Figure 18, the output is calculated to
10.9 MHz. An implementation of this circuit oscillated at 9.6 MHz. Parasitic capacitance and component
tolerances explain the difference between theory and actual performance.
12
Submit Documentation Feedback
Copyright © 2005–2016, Texas Instruments Incorporated
Product Folder Links: TLV3501 TLV3502
TLV3501, TLV3502
www.ti.com
SBOS321E – MARCH 2005 – REVISED APRIL 2016
Typical Application (continued)
VC
2/3 (V+)
t
1/3 (V+)
V+
1.38R1C
VS = 5V R
1
1kΩ
C
62pF
VOUT
R2
5kΩ
R2
5kΩ
t
f = 10MHz
V+
R2
5kΩ
Copyright © 2016 Texas Instruments Incorporated
Figure 18. Relaxation Oscillator
8.2.1.1 Design Requirements
For hysteresis of 1/3 of V+ and threshold levels between 1/3 of V+ and 2/3 of V+, the resistors connected to the
comparator positive input must be equal in value. The resistor value must be kept low enough so it does not
create additional time constant because of the input capacitor and board parasitic capacitor. The value of the
charging resistor, R1, must be relatively low for high-frequency switching without drawing high current and
affecting the output high and low level. The value of the charging capacitor must be high enough to avoid errors
cause by parasitic capacitance.
8.2.1.2 Detailed Design Procedure
For the positive input, +IN = 1/3 VOUT + 1/3 V+ = 1/3 V+ if VOUT is low and assuming VOL is very close to GND.
Or, +IN = 1/3 VOUT + 1/3 V+ = 1/3 V+ = 2/3 V+ if VOUT is high and assuming VOH is very close to V+.
For the negative input, the capacitor charges to 2/3 V+ and discharges to 1/3 V+ exponentially at the same rate
with a time constant of R1C.
8.2.1.3 Application Curve
Input
Output
Figure 19. TLV3501 Device With Upper and Lower Thresholds With 1-V Hysteresis
Submit Documentation Feedback
Copyright © 2005–2016, Texas Instruments Incorporated
Product Folder Links: TLV3501 TLV3502
13
TLV3501, TLV3502
SBOS321E – MARCH 2005 – REVISED APRIL 2016
www.ti.com
Typical Application (continued)
8.2.2 High-Speed Window Comparator
A window comparator circuit determines when a signal is between two voltages. The TLV3502 can readily be
used to create a high-speed window comparator. VHI is the upper voltage threshold, and VLO is the lower voltage
threshold. When VIN is between these two thresholds, the output in Figure 20 is high. Figure 21 shows a simple
means of obtaining an active low output. The reference levels are connected differently between Figure 20 and
Figure 21. The operating voltage range of either circuit is 2.7 V to 5.5 V.
VLO
VHI
TLV3502a
TLV3502a
VIN
VIN
VOUT
VOUT
SN74AHC00
SN74LVC1G02
TLV3502b
TLV3502b
VLO
VHI
V
V
VOUT
VOUT
VIN
VIN
VHI
VHI
VLO
VLO
Time
Time
Figure 20. Window Comparator—Active High
14
Figure 21. Window Comparator—Active Low
Submit Documentation Feedback
Copyright © 2005–2016, Texas Instruments Incorporated
Product Folder Links: TLV3501 TLV3502
TLV3501, TLV3502
www.ti.com
SBOS321E – MARCH 2005 – REVISED APRIL 2016
9 Power Supply Recommendations
The TLV350x comparators are specified for use on a single supply from 2.7 V to 5.5 V (or a dual supply from
±1.35 V to ±2.75 V) over a temperature range of −40°C to +125°C. These devices continue to function below this
range, but performance is not specified.
Place bypass capacitors close to the power-supply pins to reduce noise coupling in from noisy or highimpedance power supplies. For more detailed information on bypass capacitor placement, see Layout
Guidelines.
10 Layout
10.1 Layout Guidelines
For any high-speed comparator or amplifier, proper design and printed-circuit board (PCB) layout are necessary
for optimal performance. Excess stray capacitance on the active input, or improper grounding, can limit the
maximum performance of high-speed circuitry.
Minimizing resistance from the signal source to the comparator input is necessary to minimize the propagation
delay of the complete circuit. The source resistance, along with input and stray capacitance, creates an RC filter
that delays voltage transitions at the input, and reduces the amplitude of high-frequency signals. The input
capacitance of the TLV350x, along with stray capacitance from an input pin to ground, results in several
picofarads of capacitance.
The location and type of capacitors used for power-supply bypassing are critical to high-speed comparators. The
suggested 2.2-μF tantalum capacitor does not need to be as close to the device as the 0.1-μF capacitor, and
may be shared with other devices. The 2.2-μF capacitor buffers the power-supply line against ripple, and the 0.1μF capacitor provides a charge for the comparator during high-frequency switching.
In a high-speed circuit, fast rising and falling switching transients create voltage differences across lines that
would be at the same potential at DC. To reduce this effect, use a ground plane to reduce difference in voltage
potential within the circuit board. A ground plane has the advantage of minimizing the effect of stray capacitances
on the circuit board by providing a more desirable path for the current to flow. With a signal trace over a ground
plane, at high-frequency the return current (in the ground plane) tends to flow right under the signal trace. Breaks
in the ground plane (as simple as through-hole leads and vias) increase the inductance of the plane, making it
less effective at higher frequencies. Breaks in the ground plane for necessary vias must be spaced randomly.
Submit Documentation Feedback
Copyright © 2005–2016, Texas Instruments Incorporated
Product Folder Links: TLV3501 TLV3502
15
TLV3501, TLV3502
SBOS321E – MARCH 2005 – REVISED APRIL 2016
www.ti.com
10.2 Layout Examples
Figure 22 shows an evaluation layout for the TLV3501 8-pin SOIC package; Figure 23 is for the 5-pin SOT-23
package. Both evaluation layouts are shown with SMA connectors that bring signals on and off the board. RT1
and RT2 are termination resistors for +VIN and −VIN, respectively. C1 and C2 are power-supply bypass
capacitors. Place the 0.1-μF capacitor closest to the comparator. The ground plane is not shown, but the pads
connecting the resistors and capacitors are shown. Figure 24 shows a schematic of this circuit.
−VIN
SD
C2
C1
RT2
VOUT
RT1
DUT
+VIN
GND
+VS
Figure 22. TLV3501D (SOIC) Sample Layout
−VIN
SD
VOUT
RT2
RT1
DUT
C1 C2
+VS
GND
+VIN
Figure 23. TLV3501DBV (SOT-23) Sample Layout
+VS
−VIN
C1
100nF
RT2
50Ω
TLV3501
C2
2.2µF
VOUT
+VIN
RT1
50Ω
Shutdown
Figure 24. Layout Schematic
16
Submit Documentation Feedback
Copyright © 2005–2016, Texas Instruments Incorporated
Product Folder Links: TLV3501 TLV3502
TLV3501, TLV3502
www.ti.com
SBOS321E – MARCH 2005 – REVISED APRIL 2016
11 Device and Documentation Support
11.1 Device Support
11.1.1 Development Support
11.1.1.1 TI Precision Designs
TI Precision Designs are analog solutions created by TI’s precision analog applications experts and offer the
theory of operation, component selection, simulation, complete PCB schematic and layout, bill of materials, and
measured performance of many useful circuits. TI Precision Designs are available online at
http://www.ti.com/ww/en/analog/precision-designs/.
11.2 Documentation Support
11.2.1 Related Documentation
The following documents are relevant to using the TLV350x, and recommended for reference. All are available
for download at www.ti.com unless otherwise noted.
• Precision Design: Analog Pulse Width Modulation, SLAU508
• TLV170x 2.2-V to 36-V, microPower Comparator, SBOS589
• TLV170x-Q1 2.2-V to 36-V, microPower Comparator, SLOS890
• TLV3501A-Q1 4.5ns Rail-to-Rail, High Speed Comparator in Microsized Packages, SBOS533
• TLV3502-Q1 4.5-ns Rail-to-Rail High-Speed Comparator, SBOS507
11.3 Related Links
Table 1 lists quick access links. Categories include technical documents, support and community resources,
tools and software, and quick access to sample or buy.
Table 1. Related Links
PARTS
PRODUCT FOLDER
SAMPLE & BUY
TECHNICAL
DOCUMENTS
TOOLS &
SOFTWARE
SUPPORT &
COMMUNITY
TLV3501
Click here
Click here
Click here
Click here
Click here
TLV3502
Click here
Click here
Click here
Click here
Click here
11.4 Community Resource
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
11.5 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
11.6 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Submit Documentation Feedback
Copyright © 2005–2016, Texas Instruments Incorporated
Product Folder Links: TLV3501 TLV3502
17
TLV3501, TLV3502
SBOS321E – MARCH 2005 – REVISED APRIL 2016
www.ti.com
11.7 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
18
Submit Documentation Feedback
Copyright © 2005–2016, Texas Instruments Incorporated
Product Folder Links: TLV3501 TLV3502
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
TLV3501AID
ACTIVE
SOIC
D
8
75
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
TLV
3501
TLV3501AIDBVR
ACTIVE
SOT-23
DBV
6
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
NXA
TLV3501AIDBVRG4
ACTIVE
SOT-23
DBV
6
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
NXA
TLV3501AIDBVT
ACTIVE
SOT-23
DBV
6
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
NXA
TLV3501AIDBVTG4
ACTIVE
SOT-23
DBV
6
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
NXA
TLV3501AIDG4
ACTIVE
SOIC
D
8
75
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
TLV
3501
TLV3501AIDR
ACTIVE
SOIC
D
8
2500
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
TLV
3501
TLV3502AID
ACTIVE
SOIC
D
8
75
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
TLV
3502
TLV3502AIDCNR
ACTIVE
SOT-23
DCN
8
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
NXC
TLV3502AIDCNRG4
ACTIVE
SOT-23
DCN
8
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
NXC
TLV3502AIDCNT
ACTIVE
SOT-23
DCN
8
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
NXC
TLV3502AIDCNTG4
ACTIVE
SOT-23
DCN
8
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
NXC
TLV3502AIDG4
ACTIVE
SOIC
D
8
75
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
TLV
3502
TLV3502AIDR
ACTIVE
SOIC
D
8
2500
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
TLV
3502
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
工商网监
湘ICP备2023018690号
