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TLV62085
SLVSD63B – OCTOBER 2015 – REVISED JULY 2018
TLV62085 High Efficiency 3-A Step-Down Converter in 2-mm × 2-mm VSON Package
1 Features
3 Description
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The TLV62085 device is a high-frequency
synchronous step-down converter optimized for small
solution size and high efficiency. With an input
voltage range of 2.5 V to 6.0 V, common battery
technologies are supported. The devices focus on
high-efficiency step-down conversion over a wide
output current range. At medium to heavy loads, the
converter operates in PWM mode and automatically
enters Power Save Mode operation at light load to
maintain high efficiency over the entire load current
range.
1
DCS-Control™ Topology
Up to 95% Efficiency
17-μA Operating Quiescent Current
31mΩ and 23mΩ Power MOSFET Switch
2.5-V to 6.0-V Input Voltage Range
0.8-V to VIN Adjustable Output Voltage
Power Save Mode for Light Load Efficiency
100% Duty Cycle for Lowest Dropout
Hiccup Short-Circuit Protection
Output Discharge
Power Good Output
Thermal Shutdown Protection
Available in 2-mm × 2-mm VSON Package
For Improved Feature Set, See TPS62085
Create a Custom Design using the TLV62085 with
the WEBENCH® Power Designer
To address the requirements of system power rails,
the internal compensation circuit allows a large
selection of external output capacitor values ranging
from 10 µF to 150 µF and above. Together with its
DCS-Control™ architecture, excellent load transient
performance and output voltage regulation accuracy
are achieved. The device is available in a 2-mm × 2mm VSON package.
Device Information(1)
2 Applications
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•
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PART NUMBER
TLV62085
Battery-Powered Applications
Point-of-Load
Processor Supplies
Hard Disk Drives (HDD) / Solid State Drives
(SSD)
PACKAGE
VSON (7)
BODY SIZE (NOM)
2.00 mm × 2.00 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
spacer
spacer
spacer
Typical Application Schematic
TLV62085
VIN
2.5V to 6V C1
10µF
VIN
SW
EN
VOS
Efficiency at VIN = 5 V
L1
0.47µH
R1
138k
R3
1M
C2
22µF
100
VOUT
1.8V
FB
PG
90
R2
110k
POWER GOOD
Efficiency (%)
GND
80
70
VOUT = 1.2 V
VOUT = 1.8 V
VOUT = 3.3 V
60
1m
10m
100m
Load (A)
1
5
D008
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TLV62085
SLVSD63B – OCTOBER 2015 – REVISED JULY 2018
www.ti.com
Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
6.1
6.2
6.3
6.4
6.5
6.6
4
4
4
4
5
5
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics..........................................
Typical Characteristics ..............................................
Detailed Description .............................................. 6
7.1
7.2
7.3
7.4
Overview ...................................................................
Functional Block Diagram .........................................
Feature Description...................................................
Device Functional Modes..........................................
6
6
7
8
8
Application and Implementation .......................... 9
8.1 Application Information.............................................. 9
8.2 Typical Application ................................................... 9
9 Power Supply Recommendations...................... 15
10 Layout................................................................... 15
10.1 Layout Guidelines ................................................. 15
10.2 Layout Example .................................................... 15
10.3 Thermal Considerations ........................................ 15
11 Device and Documentation Support ................. 16
11.1
11.2
11.3
11.4
11.5
11.6
11.7
Development Support ...........................................
Documentation Support ........................................
Receiving Notification of Documentation Updates
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
16
16
16
16
16
17
17
12 Mechanical, Packaging, and Orderable
Information ........................................................... 17
4 Revision History
Changes from Revision A (January 2017) to Revision B
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Page
Added Figure 3 to power save mode section......................................................................................................................... 7
Changes from Original (October 2015) to Revision A
Page
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Added WEBENCH™ information and hyperlinks to Features, Detailed Design Procedure, and Device Support sections .. 1
•
Added SW (AC) to the Absolute Maximum Rating table ....................................................................................................... 4
•
Added Table 1, PG Pin Logic ................................................................................................................................................. 8
2
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SLVSD63B – OCTOBER 2015 – REVISED JULY 2018
5 Pin Configuration and Functions
RLT Package
7-Pin VSON
Top View
EN
1
PG
2
FB
3
VOS
4
7
VIN
6
SW
5
GND
Pin Functions
PIN
NAME
NO.
I/O
DESCRIPTION
EN
1
IN
Device enable pin. To enable the device, this pin needs to be pulled high. Pulling this pin low disables the
device. This pin has a pulldown resistor of typically 400 kΩ when the device is disabled.
FB
3
IN
Feedback pin. Connect a resistor divider to set the output voltage.
GND
5
PG
2
OUT
Power good open drain output pin. The pullup resistor can not be connected to any voltage higher than 6 V. If
unused, leave it floating.
SW
6
PWR
Switch pin of the power stage.
VIN
7
PWR
Input voltage pin.
VOS
4
IN
Ground pin.
Output voltage sense pin. This pin must be directly connected to the output capacitor.
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TLV62085
SLVSD63B – OCTOBER 2015 – REVISED JULY 2018
www.ti.com
6 Specifications
6.1 Absolute Maximum Ratings (1)
Voltage at Pins (2)
Temperature
(1)
(2)
(3)
MIN
MAX
VIN, FB, VOS, EN, PG
– 0.3
7
SW (DC)
UNIT
– 0.3
VIN + 0.3
SW (AC, less than 100ns) (3)
–3
11
V
Operating Junction, TJ
– 40
150
°C
Storage, Tstg
– 65
150
°C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability.
All voltage values are with respect to network ground terminal.
While switching.
6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001
(1)
UNIT
±2000
Charged device model (CDM), per JEDEC specification JESD22-C101 (2)
V
±500
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions (1)
MIN
NOM
MAX
VIN
Input voltage range
2.5
6
VOUT
Output voltage range
0.8
VIN
UNIT
V
V
ISINK_PG Sink current at PG pin
1
mA
VPG
Pullup resistor voltage
6
V
TJ
Operating junction temperature
125
°C
(1)
–40
Refer to Application and Implementation for further information.
6.4 Thermal Information
TLV62085
THERMAL METRIC (1)
RLT [VSON]
UNIT
7 PINS
RθJA
Junction-to-ambient thermal resistance
107.8
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
66.2
°C/W
RθJB
Junction-to-board thermal resistance
17.1
°C/W
ψJT
Junction-to-top characterization parameter
2.1
°C/W
ψJB
Junction-to-board characterization parameter
17.1
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
N/A
°C/W
(1)
4
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
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6.5
SLVSD63B – OCTOBER 2015 – REVISED JULY 2018
Electrical Characteristics
TJ = 25 °C, and VIN = 3.6 V, unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
SUPPLY
IQ
Quiescent current into VIN
No load, device not switching
17
ISD
Shutdown current into VIN
EN = Low
0.7
Under voltage lock out threshold
VIN falling
Under voltage lock out hysteresis
VIN rising
200
mV
Thermal shutdown threshold
TJ rising
150
°C
Thermal shutdown hysteresis
TJ falling
20
°C
VUVLO
TJSD
2.1
2.2
µA
µA
2.3
V
LOGIC INTERFACE EN
VIH
High-level input voltage
VIN = 2.5 V to 6.0 V
VIL
Low-level input voltage
VIN = 2.5 V to 6.0 V
1.0
V
IEN,LKG
Input leakage current into EN pin
EN = High
0.01
µA
RPD
Pull-down resistance at EN pin
EN = Low
400
kΩ
Time from EN high to 95% of VOUT nominal
0.8
ms
0.4
V
SOFT START, POWER GOOD
tSS
Soft start time
VPG
Power good threshold
VPG,OL
Low-level output voltage
Isink = 1 mA
IPG,LKG
Input leakage current into PG pin
VPG = 5.0 V
VFB
Feedback regulation voltage
PWM mode, 2.5 V ≤ VIN ≤ 6 V
TJ = 0°C to 85 °C
IFB,LKG
Feedback input leakage current
VFB = 1 V
0.01
µA
RDIS
Output discharge resistor
EN = LOW, VOUT = 1.8 V
260
Ω
mΩ
VOUT rising, referenced to VOUT nominal
95%
VOUT falling, referenced to VOUT nominal
90%
0.4
0.01
V
µA
OUTPUT
792
800
808
mV
POWER SWITCH
RDS(on)
High-side FET on-resistance
ISW = 500 mA
31
Low-side FET on-resistance
ISW = 500 mA
23
ILIM
High-side FET switch current limit
fSW
PWM switching frequency
3.7
IOUT = 1 A
4.6
mΩ
5.5
2.4
A
MHz
6.6 Typical Characteristics
Switching Frequency (Hz)
5x106
106
105
104
103
1m
VIN = 2.5 V
VIN = 3.6 V
VIN = 6.0 V
10m
100m
Load (A)
1
5
D007
VOUT = 1.2 V
Figure 1. Switching Frequency
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SLVSD63B – OCTOBER 2015 – REVISED JULY 2018
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7 Detailed Description
7.1 Overview
The TLV62085 synchronous step-down converter is based on the DCS-Control (Direct Control with Seamless
transition into Power Save Mode) topology. This is an advanced regulation topology that combines the
advantages of hysteretic, voltage, and current mode control schemes.
The DCS-Control topology operates in PWM (pulse width modulation) mode for medium to heavy load conditions
and in Power Save Mode at light load currents. In PWM mode, the converter operates with its nominal switching
frequency of 2.4 MHz, having a controlled frequency variation over the input voltage range. As the load current
decreases, the converter enters Power Save Mode, reducing the switching frequency and minimizing the IC's
current consumption to achieve high efficiency over the entire load current range. Because DCS-Control supports
both operation modes (PWM and PFM) within a single building block, the transition from PWM mode to Power
Save Mode is seamless and without effects on the output voltage. The device offers both excellent DC voltage
and superior load transient regulation, combined with very low output voltage ripple, minimizing interference with
RF circuits.
7.2 Functional Block Diagram
PG
Hiccup
Counter
VFB
VREF
EN
400kΩ
(1)
VIN
High Side
Current Sense
Bandgap
Undervoltage Lockout
Thermal Shutdown
SW
MOSFET Driver
Control Logic
GND
Ramp
Direct Control
and
Compensation
Comparator
Timer
ton
VOS
FB
VREF
Error Amplifier
DCS - Control
TM
EN
260Ω
Output Discharge
Logic
Note:
(1) When the device is enabled, the 400 kΩ resistor is disconnected.
Figure 2. Functional Block Diagram
6
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7.3 Feature Description
7.3.1 Power Save Mode
As the load current decreases, the TLV62085 enters Power Save Mode (PSM) operation. During Power Save
Mode, the converter operates with reduced switching frequency and with a minimum quiescent current
maintaining high efficiency. Power Save Mode occurs when the inductor current becomes discontinuous. Power
Save Mode is based on a fixed on-time architecture, as related in Equation 1. The switching frequency over the
whole load current range is also shown in Figure 1 for a shown typical application.
V
t ON = 420 ns ´ OUT
VIN
fPFM =
t ON2
2 ´ IOUT
V - VOUT
VIN
´
´ IN
VOUT
L
(1)
In PSM, the output voltage rises slightly above the nominal output voltage, as shown in Figure 10. This effect is
minimized by increasing the output capacitor or inductor value.
During PAUSE period in PSM (shown in Figure 3), the device does not change the PG pin state nor does it
detect an UVLO event, in order to achieve a minimum quiescent current and maintain high efficiency at light
loads.
VOUT
tPAUSE
IINDUCTOR
tON
Figure 3. Power Save Mode Waveform Diagram
7.3.2 100% Duty Cycle Low Dropout Operation
The device offers low input-to-output voltage difference by entering 100% duty cycle mode. In this mode, the
high-side MOSFET switch is constantly turned on and the low-side MOSFET is switched off. This is particularly
useful in battery powered applications to achieve the longest operation time by taking full advantage of the whole
battery voltage range. The minimum input voltage to maintain output regulation, depending on the load current
and output voltage can be calculated as:
VIN,MIN = VOUT + IOUT,MAX ´ (RDS(on) + RL )
with
•
•
•
•
VIN,MIN = Minimum input voltage to maintain an output voltage
IOUT,MAX = Maximum output current
RDS(on) = High-side FET ON-resistance
RL = Inductor ohmic resistance (DCR)
(2)
7.3.3 Soft Start
The TLV62085 has an internal soft-start circuitry which monotonically ramps up the output voltage and reaches
the nominal output voltage during a soft-start time of typically 0.8 ms. This avoids excessive inrush current and
creates a smooth output voltage slope. It also prevents excessive voltage drops of primary cells and
rechargeable batteries with high internal impedance. The device is able to start into a prebiased output capacitor.
The device starts with the applied bias voltage and ramps the output voltage to its nominal value.
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TLV62085
SLVSD63B – OCTOBER 2015 – REVISED JULY 2018
www.ti.com
Feature Description (continued)
7.3.4 Switch Current Limit and Hiccup Short-Circuit Protection
The switch current limit prevents the device from high inductor current and from drawing excessive current from
the battery or input voltage rail. Excessive current might occur with a shorted or saturated inductor or a heavy
load or shorted output circuit condition. If the inductor current reaches the threshold ILIM, the high-side MOSFET
is turned off and the low-side MOSFET is turned on to ramp down the inductor current. When this switch current
limits is triggered 32 times, the device stops switching and enables the output discharge. The device then
automatically starts a new start-up after a typical delay time of 66 µs has passed. This is named HICCUP shortcircuit protection. The device repeats this mode until the high load condition disappears.
7.3.5 Undervoltage Lockout
To avoid misoperation of the device at low input voltages, an undervoltage lockout (UVLO) is implemented,
which shuts down the device at voltages lower than VUVLO with a hysteresis of 200 mV.
7.3.6 Thermal Shutdown
The device goes into thermal shutdown and stops switching when the junction temperature exceeds TJSD. When
the device temperature falls below the threshold by 20°C, the device returns to normal operation automatically.
7.4 Device Functional Modes
7.4.1 Enable and Disable
The device is enabled by setting the EN pin to a logic HIGH. Accordingly, shutdown mode is forced if the EN pin
is pulled LOW with a shutdown current of typically 0.7 μA.
In shutdown mode, the internal power switches as well as the entire control circuitry are turned off. An internal
resistor of 260 Ω discharges the output through the VOS pin smoothly. The output discharge function also works
when thermal shutdown, UVLO, or short-circuit protection are triggered.
An internal pulldown resistor of 400 kΩ is connected to the EN pin when the EN pin is LOW. The pulldown
resistor is disconnected when the EN pin is HIGH.
7.4.2 Power Good
The TLV62085 has a power good output. The power good goes high impedance once the output is above 95%
of the nominal voltage, and is driven low once the output voltage falls below typically 90% of the nominal voltage.
The PG pin is an open-drain output and is specified to sink up to 1 mA. The power good output requires a pull-up
resistor connecting to any voltage rail less than 6 V. The PG signal can be used for sequencing of multiple rails
by connecting it to the EN pin of other converters. Leave the PG pin unconnected when not used. Table 1 shows
the PG pin logic.
Table 1. PG Pin Logic
DEVICE CONDITIONS
EN = High, VFB ≥ VPG
Enable
LOGIC STATUS
HIGH Z
LOW
√
EN = High, VFB ≤ VPG
√
Shutdown
EN = Low
√
Thermal Shutdown
TJ > TJSD
√
UVLO
0.5 V < VIN < VUVLO
Power Supply Removal
VIN ≤ 0.5 V
8
√
√
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SLVSD63B – OCTOBER 2015 – REVISED JULY 2018
8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The TLV62085 is a synchronous step-down converter in which output voltage is adjusted by component
selection. The following section discusses the design of the external components to complete the power supply
design for several input and output voltage options by using the typical applications as a reference.
8.2 Typical Application
TLV62085
VIN
2.5V to 6V C1
10µF
L1
0.47µH
SW
VIN
VOS
EN
R1
138k
R3
1M
C2
22µF
VOUT
1.8V
FB
GND
PG
R2
110k
POWER GOOD
Figure 4. 1.8-V Output Voltage Application
8.2.1 Design Requirements
For this design example, use the parameters listed in Table 2 as the input parameters.
Table 2. Design Parameters
DESIGN PARAMETER
EXAMPLE VALUE
Input voltage
2.5 V to 6 V
Output voltage
1.8 V
Output current
≤3A
Output ripple voltage