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TLV702
ZHCSK00D – SEPTEMBER 2010 – REVISED JULY 2019
TLV702 300mA、
、低 IQ、低压降稳压器
1 特性
•
1
•
•
•
•
•
•
•
(1)
3 说明
TLV702 系列低压降 (LDO) 线性稳压器是具有出色线
路和负载瞬态性能的低静态电流器件。这些 LDO 专为
功耗敏感型 应用中节省电路板空间。高精度带隙与误
差放大器可提供 2% 的总精度。低输出噪声、极高电
源抑制比 (PSRR) 和低压降电压使得这个器件成为广
泛电池供电手持设备的理想选择。所有器件版本具有热
关断和电流限值以保证安全。
极低压降：
– 在 I输出 = 50mA 并且 V输出 = 2.8V 时，为 37mV
– 在 I输出 = 100mA 并且 V输出 = 2.8V 时，为
75mV
– 在 IOUT = 300mA，VOUT = 2.8V 时，电压为
220mV
精度 2%
低 IQ：35μA
可提供从 1.2V 至 4.8V 的固定输出电压组合
高电源抑制比 (PSRR)：频率 1kHz 时为 68dB
可在采用 0.1 μF(1) 的有效电容时保持稳定
热关断保护和过流保护
封装：5 引脚 SOT-23 封装和 1.5mm × 1.5mm
6 引脚 WSON 封装
此外，这些器件在有效输出电容只有 0.1μF 时保持稳
定。这一特性允许使用具有较高偏置电压和温度降额的
成本效益型电容器。这些器件在不产生输出负载的情况
下可调节至特定的精度。
TLV702P 系列还可提供有源下拉电路，用于对输出进
行快速放电。
请参阅应用信息中的输入和输出电容器要求。
TLV702 系列 LDO 线性稳压器采用 SOT23-5 和
1.5mm × 1.5mm WSON-6 封装。
2 应用
•
•
•
•
•
•
无线手持终端
智能手机
ZigBee®网络
Bluetooth®器件
锂离子电池供电手持设备产品
WLAN 和其他 PC 附加卡
器件信息(1)
器件型号
TLV702
封装
封装尺寸（标称值）
SOT-23 (5)
2.90mm × 1.60mm
WSON (6)
1.50mm × 1.50mm
(1) 如需了解所有可用封装，请参阅数据表末尾的可订购产品附
录。
典型应用电路
VIN
IN
OUT
CIN
COUT
VOUT
1 mF
Ceramic
TLV702xx
On
Off
EN
GND
1
本文档旨在为方便起见，提供有关 TI 产品中文版本的信息，以确认产品的概要。 有关适用的官方英文版本的最新信息，请访问 www.ti.com，其内容始终优先。 TI 不保证翻译的准确
性和有效性。 在实际设计之前，请务必参考最新版本的英文版本。
English Data Sheet: SLVSAG6
TLV702
ZHCSK00D – SEPTEMBER 2010 – REVISED JULY 2019
www.ti.com.cn
目录
1
2
3
4
5
6
7
特性 ..........................................................................
应用 ..........................................................................
说明 ..........................................................................
修订历史记录 ...........................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
6.1
6.2
6.3
6.4
6.5
6.6
4
4
4
4
5
6
Absolute Maximum Ratings ......................................
ESD Ratings ............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Typical Characteristics ..............................................
Detailed Description ............................................ 10
7.1
7.2
7.3
7.4
Overview .................................................................
Functional Block Diagrams .....................................
Feature Description.................................................
Device Functional Modes........................................
10
10
11
12
8
Application and Implementation ........................ 13
8.1 Application Information............................................ 13
8.2 Typical Application .................................................. 13
9
Power Supply Recommendations...................... 15
9.1 Power Dissipation ................................................... 15
10 Layout................................................................... 15
10.1 Layout Guidelines ................................................. 15
10.2 Layout Examples................................................... 16
11 器件和文档支持 ..................................................... 17
11.1
11.2
11.3
11.4
11.5
11.6
11.7
器件支持 ...............................................................
文档支持................................................................
接收文档更新通知 .................................................
社区资源................................................................
商标 .......................................................................
静电放电警告.........................................................
Glossary ................................................................
17
17
17
17
17
17
18
12 机械、封装和可订购信息 ....................................... 18
4 修订历史记录
注：之前版本的页码可能与当前版本有所不同。
Changes from Revision C (March 2015) to Revision D
Page
•
Changed OUT pin number from 5 to 3 for WSON package................................................................................................... 3
•
Added footnote to maximum EN voltage specification .......................................................................................................... 4
•
Added parameter names to Recommended Operating Conditions table............................................................................... 4
Changes from Revision B (February 2011) to Revision C
Page
•
已添加 添加了 ESD 额定值 表、特性 说明 部分、器件功能模式、应用和实施 部分、电源建议 部分、布局 部分、器
件和文档支持 部分以及机械、封装和可订购信息 部分 ........................................................................................................... 1
•
Changed Pin Configuration and Functions section; updated table format ............................................................................ 3
•
Deleted Ordering Information table ....................................................................................................................................... 3
•
Changed "free-air temperature" to "junction temperature" in Absolute Maximum Ratings condition statement ................... 4
•
Changed Thermal Information table; updated thermal resistance values for all packages .................................................. 4
•
Deleted Dissipation Ratings table .......................................................................................................................................... 4
•
Changed VDO dropout voltage test conditions; deleted IOUT = 50 mA and IOUT = 100 mA with VOUT = 2.8 V test
parameters ............................................................................................................................................................................. 5
•
Deleted EVM Dissipation Ratings table ............................................................................................................................... 16
Changes from Revision A (October 2010) to Revision B
Page
•
向数据表中添加了 SON-6 (DSE) 封装和相关基准.................................................................................................................. 1
2
Copyright © 2010–2019, Texas Instruments Incorporated
TLV702
www.ti.com.cn
ZHCSK00D – SEPTEMBER 2010 – REVISED JULY 2019
5 Pin Configuration and Functions
DBV Package
5-Pin SOT-23
Top View
IN
GND
EN
5
1
DSE Package
6-Pin WSON
Top View
OUT
2
3
4
IN 1
6
EN
GND 2
5
N/C
OUT 3
4
N/C
NC
Pin Functions
PIN
NAME
I/O
DESCRIPTION
1
I
Input pin. A small, 1-μF ceramic capacitor is recommended from this pin to ground to
assure stability and good transient performance. See Input and Output Capacitor
Requirements in Application Information for more details.
2
—
SOT-23
WSON
IN
1
GND
2
Ground pin
Enable pin. Driving EN over 0.9 V turns on the regulator. Driving EN below 0.4 V puts
the regulator into shutdown mode and reduces operating current to 1 μA, nominal.
For TLV702P, output voltage is discharged through an internal 120-Ω resistor when
device is shut down.
EN
3
6
I
NC
4
4, 5
—
No connection. This pin can be tied to ground to improve thermal dissipation.
OUT
5
3
O
Regulated output voltage pin. A small, 1-μF ceramic capacitor is needed from this pin
to ground to assure stability. See Input and Output Capacitor Requirements in
Application Information for more details.
Copyright © 2010–2019, Texas Instruments Incorporated
3
TLV702
ZHCSK00D – SEPTEMBER 2010 – REVISED JULY 2019
www.ti.com.cn
6 Specifications
6.1 Absolute Maximum Ratings
over operating junction temperature range (unless otherwise noted) (1)
Voltage (2)
Current (source)
MIN
MAX
IN
–0.3
6
EN
–0.3
6 (3)
OUT
–0.3
6
OUT
Indefinite
Total continuous power dissipation
(1)
(2)
(3)
V
Internally limited
Output short-circuit duration
Temperature
UNIT
See Thermal Information
Operating virtual junction, TJ
–55
150
Storage, Tstg
–55
150
°C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods my affect device reliability.
All voltages are with respect to network ground terminal.
The absolute maximum rating is VIN + 0.3 V or 6.0 V, whichever is smaller.
6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins (1)
±2000
Charged device model (CDM), per JEDEC specification JESD22-C101,
all pins (2)
±500
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted).
MIN
VIN
Input voltage
VOUT
IOUT
NOM
MAX
UNIT
2
5.5
V
Output voltage
1.2
4.8
V
Output current
0
300
mA
6.4 Thermal Information
TLV702
THERMAL METRIC (1)
DBV (SOT-23)
DSE (WSON)
5 PINS
6 PINS
UNIT
RθJA
Junction-to-ambient thermal resistance
249.2
321.3
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
136.4
207.9
°C/W
RθJB
Junction-to-board thermal resistance
85.9
281.5
°C/W
ψJT
Junction-to-top characterization parameter
19.5
42.4
°C/W
ψJB
Junction-to-board characterization parameter
85.3
284.8
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
N/A
142.3
°C/W
(1)
4
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
Copyright © 2010–2019, Texas Instruments Incorporated
TLV702
www.ti.com.cn
ZHCSK00D – SEPTEMBER 2010 – REVISED JULY 2019
6.5 Electrical Characteristics
At VIN = VOUT(nom) + 0.5 V or 2 V (whichever is greater); IOUT = 10 mA, VEN = 0.9 V, COUT = 1 μF, and TJ = –40°C to +125°C,
unless otherwise noted. Typical values are at TJ = 25°C.
PARAMETER
TEST CONDITIONS
MIN
TYP
VOUT
DC output accuracy
–40°C ≤ TJ ≤ 125°C
0.5%
2%
ΔVOUT(ΔVIN)
Line regulation
VOUT(nom) + 0.5 V ≤ VIN ≤ 5.5 V,
IOUT = 10 mA
1
5
mV
ΔVOUT(ΔIOUT)
Load regulation
0 mA ≤ IOUT ≤ 300 mA
1
15
mV
260
375
mV
500
860
mA
35
55
μA
VDO
Dropout voltage
ICL
Output current limit
IGND
Ground pin current
–2%
VIN = 0.98 × VOUT(nom), IOUT = 300 mA
VOUT = 0.9 × VOUT(nom)
320
IOUT = 0 mA
5.5
UNIT
Input voltage range
(1)
2
MAX
VIN
V
IOUT = 300 mA, VIN = VOUT + 0.5 V
370
μA
VEN ≤ 0.4 V, VIN = 2 V
400
nA
ISHDN
Ground pin current (shutdown)
PSRR
Power-supply rejection ratio
VIN = 2.3 V, VOUT = 1.8 V,
IOUT = 10 mA, f = 1 kHz
68
dB
Vn
Output noise voltage
BW = 100 Hz to 100 kHz,
VIN = 2.3 V, VOUT = 1.8 V, IOUT = 10 mA
48
μVRMS
tSTR
Start-up time (2)
COUT = 1 μF, IOUT = 300 mA
VEN(high)
Enable pin high (enabled)
0.9
VIN
V
VEN(low)
Enable pin low (disabled)
0
0.4
V
IEN
Enable pin current
VIN = VEN = 5.5 V
0.04
μA
UVLO
Undervoltage lockout
VIN rising
1.9
V
RDISCHARGE
Active pulldown resistance
(TLV702P only)
VEN = 0 V
120
Ω
Tsd
Thermal shutdown temperature
Shutdown, temperature increasing
165
°C
Reset, temperature decreasing
145
°C
TJ
Operating junction temperature
(1)
(2)
VEN ≤ 0.4 V, 2 V ≤ VIN ≤ 4.5 V,
TJ = –40°C to +85°C
1
2
100
–40
μA
μs
125
°C
VDO is measured for devices with VOUT(nom) ≥ 2.35 V.
Start-up time = time from EN assertion to 0.98 × VOUT(nom).
Copyright © 2010–2019, Texas Instruments Incorporated
5
TLV702
ZHCSK00D – SEPTEMBER 2010 – REVISED JULY 2019
www.ti.com.cn
6.6 Typical Characteristics
Over operating temperature range (TJ = –40°C to +125°C), VIN = VOUT(nom) + 0.5 V or 2 V, whichever is greater; IOUT = 10 mA,
VEN = VIN, COUT = 1 μF, unless otherwise noted. Typical values are at TJ = 25°C.
1.90
1.90
VOUT = 1.8 V
IOUT = 10 mA
1.88
1.86
1.84
1.84
1.82
1.82
VOUT (V)
VOUT (V)
1.86
1.80
1.78
1.76
1.72
1.80
1.78
1.76
+125°C
+85°C
+25°C
-40°C
1.74
VOUT = 1.8 V
IOUT = 300 mA
1.88
+125°C
+85°C
+25°C
-40°C
1.74
1.72
1.70
1.70
2.1
2.6
3.1
3.6
4.1
VIN (V)
4.6
5.1
2.3
5.6
2.7
3.1
Figure 1. Line Regulation
3.5
3.9
VIN (V)
4.3
4.7
5.5
5.1
Figure 2. Line Regulation
350
1.90
IOUT = 300 mA
VOUT = 1.8 V
1.88
300
1.86
250
VDO (mV)
VOUT (V)
1.84
1.82
1.80
1.78
1.76
1.72
50
100
150
200
250
+125°C
+85°C
+25°C
–40°C
50
0
2.25
1.70
0
150
100
+125°C
+85°C
+25°C
-40°C
1.74
200
300
2.75
3.25
IOUT (mA)
300
1.90
VOUT = 4.8 V
VOUT = 1.8 V
1.88
250
1.86
1.84
VOUT (V)
200
VDO (mV)
4.75
4.25
Figure 4. Dropout Voltage vs Input Voltage
Figure 3. Load Regulation
150
100
+125°C
+85°C
+25°C
-40°C
50
0
1.82
1.80
1.78
1.76
10mA
150mA
200mA
1.74
1.72
1.70
0
50
100
150
200
250
IOUT (mA)
Figure 5. Dropout Voltage vs Output Current
6
3.75
VIN (V)
300
-40 -25 -10
5
20 35 50 65
Temperature (°C)
80
95
110 125
Figure 6. Output Voltage vs Temperature
Copyright © 2010–2019, Texas Instruments Incorporated
TLV702
www.ti.com.cn
ZHCSK00D – SEPTEMBER 2010 – REVISED JULY 2019
Typical Characteristics (continued)
Over operating temperature range (TJ = –40°C to +125°C), VIN = VOUT(nom) + 0.5 V or 2 V, whichever is greater; IOUT = 10 mA,
VEN = VIN, COUT = 1 μF, unless otherwise noted. Typical values are at TJ = 25°C.
450
50
VOUT = 1.8 V
45
40
350
35
300
30
IGND (mA)
IGND (mA)
VOUT = 1.8 V
400
25
20
15
5
200
150
+125°C
+85°C
+25°C
-40°C
10
250
+125°C
+85°C
+25°C
-40°C
100
50
0
0
2.1
2.6
3.1
3.6
4.1
VIN (V)
4.6
5.1
0
5.6
Figure 7. Ground Pin Current vs Input Voltage
50
200
150
IOUT (mA)
250
300
Figure 8. Ground Pin Current vs Load
2.5
VOUT = 1.8 V
45
100
50
VOUT = 1.8 V
2
40
ISHDN (mA)
IGND (mA)
35
30
25
20
1.5
1
15
+125°C
+85°C
+25°C
-40°C
0.5
10
5
0
0
-40 -25 -10
5
20 35 50 65
Temperature (°C)
80
95
2.1
110 125
Figure 9. Ground Pin Current vs Temperature
2.6
3.1
3.6
4.1
VIN (V)
5.1
5.6
Figure 10. Shutdown Current vs Input Voltage
100
700
VOUT = 1.8 V
IOUT = 10 mA
90
600
80
500
IOUT = 150 mA
70
PSRR (dB)
ILIM (mA)
4.6
400
300
200
+125°C
+85°C
+25°C
-40°C
100
0
2.3
2.7
3.1
3.5
3.9
VIN (V)
4.3
4.7
5.1
Figure 11. Current Limit vs Input Voltage
Copyright © 2010–2019, Texas Instruments Incorporated
5.5
60
50
40
30
20
10
VIN - VOUT = 0.5 V
0
10
100
1k
10 k
100 k
1M
10 M
Frequency (Hz)
Figure 12. Power-Supply Ripple Rejection vs Frequency
7
TLV702
ZHCSK00D – SEPTEMBER 2010 – REVISED JULY 2019
www.ti.com.cn
Typical Characteristics (continued)
Over operating temperature range (TJ = –40°C to +125°C), VIN = VOUT(nom) + 0.5 V or 2 V, whichever is greater; IOUT = 10 mA,
VEN = VIN, COUT = 1 μF, unless otherwise noted. Typical values are at TJ = 25°C.
60
PSRR (dB)
VOUT = 1.8 V
1 kHz
70
Output Spectral Noise Density (mV/ÖHz)
80
10 kHz
50
100 kHz
40
30
20
10
0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
10
VOUT = 1.8 V
IOUT = 10 mA
CIN = COUT = 1 mF
1
0.1
0.01
0.001
10
2.8
100
1k
Figure 13. Power-Supply Ripple Rejection vs Input Voltage
VOUT
20 mA/div
0 mA
0 mA
IOUT
VOUT
VOUT = 1.8 V
10 ms/div
10 ms/div
Figure 15. Load Transient Response
Figure 16. Load Transient Response
tR = tF = 1 ms
50 mA
0 mA
200 mA/div
300 mA
IOUT
100 mV/div
50 mA/div
tR = tF = 1 ms
20 mV/div
10 M
10 mA
VOUT = 1.8 V
VOUT
IOUT
0 mA
VOUT
VOUT = 1.8 V
VOUT = 1.8 V
10 ms/div
Figure 17. Load Transient Response
8
1M
tR = tF = 1 ms
200 mA
IOUT
100 k
Figure 14. Output Spectral Noise Density vs Frequency
5 mV/div
50 mV/div
100 mA/div
tR = tF = 1 ms
10 k
Frequency (Hz)
Input Voltage (V)
10 ms/div
Figure 18. Load Transient Response
Copyright © 2010–2019, Texas Instruments Incorporated
TLV702
www.ti.com.cn
ZHCSK00D – SEPTEMBER 2010 – REVISED JULY 2019
Typical Characteristics (continued)
Over operating temperature range (TJ = –40°C to +125°C), VIN = VOUT(nom) + 0.5 V or 2 V, whichever is greater; IOUT = 10 mA,
VEN = VIN, COUT = 1 μF, unless otherwise noted. Typical values are at TJ = 25°C.
1 V/div
2.9 V
VIN
Slew Rate = 1 V/ms
2.9 V
2.3 V
VIN
VOUT
VOUT = 1.8 V
IOUT = 300 mA
5 mV/div
2.3 V
5 mV/div
1 V/div
Slew Rate = 1 V/ms
VOUT
VOUT = 1.8 V
IOUT = 1 mA
1 ms/div
1 ms/div
Figure 20. Line Transient Response
Slew Rate = 1 V/ms
VOUT = 1.8 V
IOUT = 300 mA
5.5 V
VIN
10 mV/div
2.1 V
VOUT = 1.8 V
IOUT = 1 mA
VIN
1 V/div
1 V/div
Figure 19. Line Transient Response
VOUT
VOUT
1 ms/div
Figure 21. Line Transient Response
Copyright © 2010–2019, Texas Instruments Incorporated
200 ms/div
Figure 22. VIN Ramp Up, Ramp Down Response
9
TLV702
ZHCSK00D – SEPTEMBER 2010 – REVISED JULY 2019
www.ti.com.cn
7 Detailed Description
7.1 Overview
The TLV702 series of low-dropout (LDO) linear regulators are low quiescent current devices with excellent line
and load transient performance. These LDOs are designed for power-sensitive applications. A precision bandgap
and error amplifier provides overall 2% accuracy. Low output noise, very high power-supply rejection ratio
(PSRR), and low dropout voltage make this series of devices ideal for most battery-operated handheld
equipment. All device versions have integrated thermal shutdown, current limit, and undervoltage lockout
(UVLO).
7.2 Functional Block Diagrams
IN
OUT
Current
Limit
Thermal
Shutdown
UVLO
EN
Bandgap
LOGIC
TLV702xx Series
GND
Figure 23. TLV702 Block Diagram
10
Copyright © 2010–2019, Texas Instruments Incorporated
TLV702
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ZHCSK00D – SEPTEMBER 2010 – REVISED JULY 2019
Functional Block Diagrams (continued)
IN
OUT
Current
Limit
Thermal
Shutdown
UVLO
EN
120W
Bandgap
LOGIC
TLV702xxP Series
GND
Figure 24. TLV702P Block Diagram
7.3 Feature Description
7.3.1 Internal Current Limit
The TLV702 internal current limit helps to protect the regulator during fault conditions. During current limit, the
output sources a fixed amount of current that is largely independent of the output voltage. In such a case, the
output voltage is not regulated, and is VOUT = ICL × RLOAD. The PMOS pass transistor dissipates (VIN – VOUT) ×
ICL until thermal shutdown is triggered and the device turns off. As the device cools, it is turned on by the internal
thermal shutdown circuit. If the fault condition continues, the device cycles between current limit and thermal
shutdown. See Thermal Consideration for more details.
The PMOS pass element in the TLV702 has a built-in body diode that conducts current when the voltage at OUT
exceeds the voltage at IN. This current is not limited, so if extended reverse voltage operation is anticipated,
external limiting to 5% of the rated output current is recommended.
7.3.2 Shutdown
The enable pin (EN) is active high. The device is enabled when voltage at EN pin goes above 0.9 V. The device
is turned off when the EN pin is held at less than 0.4 V. When shutdown capability is not required, EN can be
connected to the IN pin.
The TLV702P version has internal active pulldown circuitry that discharges the output with a time constant of:
(120 · RL)
t=
· COUT
(120 + RL)
where:
•
•
RL = Load resistance
COUT = Output capacitor
Copyright © 2010–2019, Texas Instruments Incorporated
(1)
11
TLV702
ZHCSK00D – SEPTEMBER 2010 – REVISED JULY 2019
www.ti.com.cn
Feature Description (continued)
7.3.3 Dropout Voltage
The TLV702 uses a PMOS pass transistor to achieve low dropout. When (VIN – VOUT) is less than the dropout
voltage (VDO), the PMOS pass device is in the linear (triode) region of operation and the input-to-output
resistance is the RDS(on) of the PMOS pass element. VDO scales approximately with output current because the
PMOS device behaves as a resistor in dropout.
As with any linear regulator, PSRR and transient response are degraded as (VIN – VOUT) approaches dropout.
This effect is shown in Figure 13.
7.3.4 Undervoltage Lockout
The TLV702 uses a UVLO circuit to keep the output shut off until internal circuitry is operating properly.
7.4 Device Functional Modes
7.4.1 Normal Operation
The device regulates to the nominal output voltage under the following conditions:
•
•
•
The input voltage is greater than the nominal output voltage added to the dropout voltage.
The output current is less than the current limit.
The input voltage is greater than the UVLO voltage.
7.4.2 Dropout Operation
If the input voltage is lower than the nominal output voltage plus the specified dropout voltage, but all other
conditions are met for normal operation, the device operates in dropout mode. In this condition, the output
voltage is the same as the input voltage minus the dropout voltage. The transient performance of the device is
significantly degraded because the pass device is in a triode state and no longer regulates the output voltage of
the LDO. Line or load transients in dropout may result in large output voltage deviations.
Table 1 lists the conditions that lead to the different modes of operation.
Table 1. Device Functional Mode Comparison
OPERATING MODE
12
PARAMETER
VIN
IOUT
Normal mode
VIN > VOUT (nom) + VDO
IOUT < ICL
Dropout mode
VIN < VOUT (nom) + VDO
IOUT < ICL
Current limit
VIN > UVLO
IOUT > ICL
Copyright © 2010–2019, Texas Instruments Incorporated
TLV702
www.ti.com.cn
ZHCSK00D – SEPTEMBER 2010 – REVISED JULY 2019
8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The TLV702 belongs to a new family of next-generation value LDO regulators. These devices consume low
quiescent current and deliver excellent line and load transient performance. These characteristics, combined with
low noise and very good PSRR with little (VIN – VOUT) headroom, make this family of devices ideal for portable
RF applications. This family of regulators offers current limit and thermal protection, and is specified from –40°C
to +125°C.
8.2 Typical Application
VIN
IN
OUT
CIN
COUT
VOUT
1 mF
Ceramic
TLV702xx
On
Off
EN
GND
Figure 25. Typical Application Circuit
8.2.1 Design Requirements
Table 2 lists the design parameters.
Table 2. Design Parameters
PARAMETER
DESIGN REQUIREMENT
Input voltage
2.5 V to 3.3 V
Output voltage
1.8 V
Output current
100 mA
8.2.2 Detailed Design Procedure
8.2.2.1 Input and Output Capacitor Requirements
1-μF X5R- and X7R-type ceramic capacitors are recommended because these capacitors have minimal variation
in value and equivalent series resistance (ESR) overtemperature.
However, the TLV702 is designed to be stable with an effective capacitance of 0.1 μF or larger at the output.
Thus, the device is stable with capacitors of other dielectric types as well, as long as the effective capacitance
under operating bias voltage and temperature is greater than 0.1 μF. This effective capacitance refers to the
capacitance that the LDO sees under operating bias voltage and temperature conditions; that is, the capacitance
after taking both bias voltage and temperature derating into consideration. In addition to allowing the use of
lower-cost dielectrics, this capability of being stable with 0.1-μF effective capacitance also enables the use of
smaller footprint capacitors that have higher derating in size- and space-constrained applications.
Using a 0.1-μF rated capacitor at the output of the LDO does not ensure stability because the effective
capacitance under the specified operating conditions must not be less than 0.1 μF. Maximum ESR should be
less than 200 mΩ.
Copyright © 2010–2019, Texas Instruments Incorporated
13
TLV702
ZHCSK00D – SEPTEMBER 2010 – REVISED JULY 2019
www.ti.com.cn
Although an input capacitor is not required for stability, it is good analog design practice to connect a 0.1-μF to 1μF, low ESR capacitor across the IN pin and GND pin of the regulator. This capacitor counteracts reactive input
sources and improves transient response, noise rejection, and ripple rejection. A higher-value capacitor may be
necessary if large, fast rise-time load transients are anticipated, or if the device is not located close to the power
source. If source impedance is more than 2 Ω, a 0.1-μF input capacitor may be necessary to ensure stability.
8.2.2.2 Transient Response
As with any regulator, increasing the size of the output capacitor reduces overshoot and undershoot magnitude
but increases the duration of the transient response.
8.2.3 Application Curves
50 mA
1 V/div
IOUT
VIN
Slew Rate = 1 V/ms
2.9 V
2.3 V
0 mA
5 mV/div
20 mV/div
50 mA/div
tR = tF = 1 ms
VOUT
VOUT
VOUT = 1.8 V
IOUT = 1 mA
VOUT = 1.8 V
10 ms/div
Figure 26. Load Transient Response
14
1 ms/div
Figure 27. Line Transient Response
Copyright © 2010–2019, Texas Instruments Incorporated
TLV702
www.ti.com.cn
ZHCSK00D – SEPTEMBER 2010 – REVISED JULY 2019
9 Power Supply Recommendations
Connect a low output impedance power supply directly to the INPUT pin of the TLV702. Inductive impedances
between the input supply and the INPUT pin can create significant voltage excursions at the INPUT pin during
start-up or load transient events.
9.1 Power Dissipation
The ability to remove heat from the die is different for each package type, presenting different considerations in
the printed-circuit-board (PCB) layout. The PCB area around the device that is free of other components moves
the heat from the device to the ambient air.
Refer to Thermal Information for thermal performance on the TLV702 evaluation module (EVM). The EVM is a
two-layer board with two ounces of copper per side.
Power dissipation depends on input voltage and load conditions. Power dissipation (PD) is equal to the product of
the output current and the voltage drop across the output pass element, as shown in Equation 2.
PD = (VIN - VOUT) ´ IOUT
(2)
10 Layout
10.1 Layout Guidelines
Input and output capacitors should be placed as close to the device pins as possible. To improve AC
performance such as PSRR, output noise, and transient response, TI recommends designing the board with
separate ground planes for VIN and VOUT, with the ground plane connected only at the GND pin of the device. In
addition, the ground connection for the output capacitor should be connected directly to the GND pin of the
device. High ESR capacitors may degrade PSRR performance.
10.1.1 Thermal Consideration
Thermal protection disables the output when the junction temperature rises to approximately 165°C, allowing the
device to cool. When the junction temperature cools to approximately 145°C, the output circuitry is again
enabled. Depending on power dissipation, thermal resistance, and ambient temperature, the thermal protection
circuit may cycle on and off. This cycling limits the dissipation of the regulator, protecting it from damage as a
result of overheating.
Any tendency to activate the thermal protection circuit indicates excessive power dissipation or an inadequate
heatsink. For reliable operation, junction temperature should be limited to 125°C maximum.
To estimate the margin of safety in a complete design (including heatsink), increase the ambient temperature
until the thermal protection is triggered; use worst-case loads and signal conditions.
The internal protection circuitry of the TLV702 has been designed to protect against overload conditions. It was
not intended to replace proper heatsinking. Continuously running the TLV702 into thermal shutdown degrades
device reliability.
Copyright © 2010–2019, Texas Instruments Incorporated
15
TLV702
ZHCSK00D – SEPTEMBER 2010 – REVISED JULY 2019
www.ti.com.cn
Layout Guidelines (continued)
10.1.2 Package Mounting
Solder pad footprint recommendations for the TLV702 are available from the TI website at www.ti.com. The
recommended land pattern for the DBV and DSE packages are shown in Figure 28 and Figure 29, respectively.
10.2 Layout Examples
VOUT
VIN
OUT
IN
CIN
COUT
GND
NC
EN
GND PLANE
Represents via used for
application specific connections
Figure 28. Layout Example for the DBV Package
VIN
CIN
IN
EN
GND
NC
OUT
NC
VOUT
GND PLANE
COUT
Represents via used for
application specific connections
Figure 29. Layout Example for the DSE Package
16
版权 © 2010–2019, Texas Instruments Incorporated
TLV702
www.ti.com.cn
ZHCSK00D – SEPTEMBER 2010 – REVISED JULY 2019
11 器件和文档支持
11.1 器件支持
11.1.1 开发支持
11.1.1.1 Spice 模型
分析模拟电路和系统的性能时，使用 SPICE 模型对电路性能进行计算机仿真非常有用。您可以从产品文件夹中的
工具和软件 下获取 TLV702 的 SPICE 模型。
11.1.2 器件命名规则
表 3. 订购信息 (1)
产品
TLV702xx yyyz
(1)
(2)
VOUT
(2)
XX 为标称输出电压（例如 28 = 2.8V）。
YYY 为封装符号。
Z 为卷带数量（R = 3000，T = 250）。
要获得最新的封装和订货信息，请参阅本文档末尾的封装选项附录，或者访问器件产品文件夹，此文件夹位于www.ti.com.cn内。
可提供 1.2V 至 4.8V 范围内的输出电压（以 50mV 为单位增加）。更多详细信息及可用性，请联系制造商。
11.2 文档支持
11.2.1 相关文档
请参阅如下相关文档：
德州仪器 (TI)，《使用 TLV700xxEVM-503》 用户指南
11.3 接收文档更新通知
要接收文档更新通知，请导航至 TI.com.cn 上的器件产品文件夹。单击右上角的通知我 进行注册，即可每周接收产
品信息更改摘要。有关更改的详细信息，请查看任何已修订文档中包含的修订历史记录。
11.4 社区资源
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
11.5 商标
E2E is a trademark of Texas Instruments.
Bluetooth is a registered trademark of Bluetooth SIG.
ZigBee is a registered trademark of the ZigBee Alliance.
All other trademarks are the property of their respective owners.
11.6 静电放电警告
ESD 可能会损坏该集成电路。德州仪器 (TI) 建议通过适当的预防措施处理所有集成电路。如果不遵守正确的处理措施和安装程序 , 可
能会损坏集成电路。
ESD 的损坏小至导致微小的性能降级 , 大至整个器件故障。 精密的集成电路可能更容易受到损坏 , 这是因为非常细微的参数更改都可
能会导致器件与其发布的规格不相符。
版权 © 2010–2019, Texas Instruments Incorporated
17
TLV702
ZHCSK00D – SEPTEMBER 2010 – REVISED JULY 2019
www.ti.com.cn
11.7 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 机械、封装和可订购信息
以下页面包含机械、封装和可订购信息。这些信息是指定器件的最新可用数据。数据如有变更，恕不另行通知，且
不会对此文档进行修订。如需获取此数据表的浏览器版本，请查阅左侧的导航栏。
18
版权 © 2010–2019, Texas Instruments Incorporated
PACKAGE OPTION ADDENDUM
www.ti.com
15-Jul-2022
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
HPA01091DBVR
ACTIVE
SOT-23
DBV
5
3000
TBD
Call TI
Call TI
-40 to 125
Samples
HPA01198DBVR
ACTIVE
SOT-23
DBV
5
3000
TBD
Call TI
Call TI
-40 to 125
Samples
TLV70212DBVR
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
QVN
Samples
TLV70212DBVT
ACTIVE
SOT-23
DBV
5
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
QVN
Samples
TLV70213DBVR
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
12UW
Samples
TLV70213DBVT
ACTIVE
SOT-23
DBV
5
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
12UW
Samples
TLV70215DBVR
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
SIR
Samples
TLV70215DBVT
ACTIVE
SOT-23
DBV
5
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
SIR
Samples
TLV70215PDBVR
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
SLG
Samples
TLV70215PDBVT
ACTIVE
SOT-23
DBV
5
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
SLG
Samples
TLV70218DBVR
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
QUW
Samples
TLV70218DBVT
ACTIVE
SOT-23
DBV
5
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
QUW
Samples
TLV70220PDBVR
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
QXL
Samples
TLV70220PDBVT
ACTIVE
SOT-23
DBV
5
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
QXL
Samples
TLV70225DBVR
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
QVF
Samples
TLV70225DBVT
ACTIVE
SOT-23
DBV
5
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
QVF
Samples
TLV70225DSER
ACTIVE
WSON
DSE
6
3000
RoHS & Green
NIPDAUAG
Level-1-260C-UNLIM
-40 to 125
SY
Samples
TLV70225DSET
ACTIVE
WSON
DSE
6
250
RoHS & Green
NIPDAUAG
Level-1-260C-UNLIM
-40 to 125
SY
Samples
TLV70228DBVR
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
QUX
Samples
TLV70228DBVT
ACTIVE
SOT-23
DBV
5
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
QUX
Samples
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
Orderable Device
15-Jul-2022
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
TLV70228DSER
ACTIVE
WSON
DSE
6
3000
RoHS & Green
NIPDAUAG
Level-1-260C-UNLIM
-40 to 125
VY
Samples
TLV70228DSET
ACTIVE
WSON
DSE
6
250
RoHS & Green
NIPDAUAG
Level-1-260C-UNLIM
-40 to 125
VY
Samples
TLV70228PDBVR
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
QVA
Samples
TLV70228PDBVT
ACTIVE
SOT-23
DBV
5
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
QVA
Samples
TLV70229DBVR
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
SJW
Samples
TLV70229DBVT
ACTIVE
SOT-23
DBV
5
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
SJW
Samples
TLV70229DSER
ACTIVE
WSON
DSE
6
3000
RoHS & Green
NIPDAUAG
Level-1-260C-UNLIM
-40 to 125
SZ
Samples
TLV70229DSET
ACTIVE
WSON
DSE
6
250
RoHS & Green
NIPDAUAG
Level-1-260C-UNLIM
-40 to 125
SZ
Samples
TLV70230DBVR
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
QUY
Samples
TLV70230DBVT
ACTIVE
SOT-23
DBV
5
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
QUY
Samples
TLV70231DBVR
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
QUZ
Samples
TLV70231DBVT
ACTIVE
SOT-23
DBV
5
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
QUZ
Samples
TLV70233DBVR
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
QVD
Samples
TLV70233DBVT
ACTIVE
SOT-23
DBV
5
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
QVD
Samples
TLV70233DSER
ACTIVE
WSON
DSE
6
3000
RoHS & Green
NIPDAUAG
Level-1-260C-UNLIM
-40 to 125
WK
Samples
TLV70233DSET
ACTIVE
WSON
DSE
6
250
RoHS & Green
NIPDAUAG
Level-1-260C-UNLIM
-40 to 125
WK
Samples
TLV70233PDBVR
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
SLH
Samples
TLV70233PDBVT
ACTIVE
SOT-23
DBV
5
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
SLH
Samples
TLV70235DBVR
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
SDT
Samples
TLV70235DBVT
ACTIVE
SOT-23
DBV
5
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
SDT
Samples
TLV70236DSER
ACTIVE
WSON
DSE
6
3000
RoHS & Green
NIPDAUAG
Level-1-260C-UNLIM
-40 to 125
VZ
Samples
Addendum-Page 2
PACKAGE OPTION ADDENDUM
www.ti.com
Orderable Device
15-Jul-2022
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
TLV70236DSET
ACTIVE
WSON
DSE
6
250
RoHS & Green
NIPDAUAG
Level-1-260C-UNLIM
-40 to 125
VZ
Samples
TLV70237DBVR
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
QXR
Samples
TLV70237DBVT
ACTIVE
SOT-23
DBV
5
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
QXR
Samples
TLV70237DSER
ACTIVE
WSON
DSE
6
3000
RoHS & Green
NIPDAUAG
Level-1-260C-UNLIM
-40 to 125
D8
Samples
TLV70237DSET
ACTIVE
WSON
DSE
6
250
RoHS & Green
NIPDAUAG
Level-1-260C-UNLIM
-40 to 125
D8
Samples
TLV70242PDSER
ACTIVE
WSON
DSE
6
3000
RoHS & Green
NIPDAUAG
Level-1-260C-UNLIM
-40 to 125
B9
Samples
TLV70242PDSET
ACTIVE
WSON
DSE
6
250
RoHS & Green
NIPDAUAG
Level-1-260C-UNLIM
-40 to 125
B9
Samples
TLV70243DSER
ACTIVE
WSON
DSE
6
3000
RoHS & Green
NIPDAUAG
Level-1-260C-UNLIM
-40 to 125
5Q
Samples
TLV70243DSET
ACTIVE
WSON
DSE
6
250
RoHS & Green
NIPDAUAG
Level-1-260C-UNLIM
-40 to 125
5Q
Samples
TLV70245DBVR
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
SCK
Samples
TLV70245DBVT
ACTIVE
SOT-23
DBV
5
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
SCK
Samples
TLV702475DBVR
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
QWJ
Samples
TLV702475DBVT
ACTIVE
SOT-23
DBV
5
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
QWJ
Samples
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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