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TLV733P
ZHCSD13B – OCTOBER 2014 – REVISED NOVEMBER 2015
TLV733P 采用 1mm x 1mm SON 封装的无电容、300mA
低压降稳压器
1 特性
•
•
•
•
1
•
•
•
•
•
•
3 说明
输入电压范围：1.4V 至 5.5V
有无电容器均可实现稳定运行
折返过流保护
封装：
– 1.0mm × 1.0mm X2SON (4)
– SOT-23 (5)
超低压降：300mA (3.3 VOUT) 时为 125mV
精度：典型值 1%，最大值 1.4%
低 IQ：34µA
可提供固定输出电压：
1.0V 至 3.3V
高电源抑制比 (PSRR)：1kHz 频率时为 50dB
有源输出放电
2 应用
•
•
•
•
•
•
TLV733 系列低压降线性稳压器 (LDO) 尺寸超小且静
态电流较低，可提供 300mA 的拉电流，并且线路和负
载瞬态性能出色。此系列器件可提供典型值为 1% 的
精度。
TLV733 系列采用现代无电容架构设计，无需使用输入
或输出电容即可确保运行稳定。移除输出电容有助于减
小解决方案的尺寸，并且可以消除启动时的浪涌电流。
不过，TLV733 系列在使用陶瓷输出电容时也可以稳定
运行。使用输出电容时，TLV733 还可以在器件上电和
使能期间提供折返电流控制。此功能对于电池供电类器
件尤为重要。
TLV733 提供了有源下拉电路，当被禁用时可以使输出
负载快速放电。
TLV733 系列采用标准的 DBV (SOT-23) 和 DQN
(X2SON) 封装。
平板电脑
智能手机
笔记本和台式计算机
便携式工业和消费类产品
无线局域网 (WLAN) 和其他 PC 附加卡
摄像机模块
器件信息(1)
器件型号
封装
TLV733P
封装尺寸（标称值）
SOT-23 (5)
2.90mm x 1.60mm
X2SON (4)
1.00mm x 1.00mm
(1) 要了解所有可用封装，请参见数据表末尾的封装选项附录。
典型应用电路
压降电压与输出电流间的关系
180
TLV733
CIN
EN
Optional
ON
OFF
OUT
140
COUT
GND
VOUT = 3.3 V
VOUT = 1.8 V
160
120
Optional
VDO (mV)
IN
100
80
60
40
20
0
0
30
60
90
120 150 180
IOUT (mA)
210
240
270
300
D020
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
English Data Sheet: SBVS235
TLV733P
ZHCSD13B – OCTOBER 2014 – REVISED NOVEMBER 2015
www.ti.com.cn
目录
1
2
3
4
5
6
7
特性 ..........................................................................
应用 ..........................................................................
说明 ..........................................................................
修订历史记录 ...........................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
6.1
6.2
6.3
6.4
6.5
6.6
4
4
4
4
5
6
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Typical Characteristics ..............................................
Detailed Description ............................................ 12
7.1 Overview ................................................................. 12
7.2 Functional Block Diagram ....................................... 12
7.3 Feature Description................................................. 13
7.4 Device Functional Modes........................................ 14
8
Application and Implementation ........................ 15
8.1 Application Information............................................ 15
8.2 Typical Applications ............................................... 17
9 Power-Supply Recommendations...................... 19
10 Layout................................................................... 19
10.1 Layout Guidelines ................................................. 19
10.2 Layout Examples................................................... 19
11 器件和文档支持 ..................................................... 20
11.1
11.2
11.3
11.4
11.5
器件支持 ...............................................................
文档支持................................................................
商标 .......................................................................
静电放电警告.........................................................
Glossary ................................................................
20
20
20
20
20
12 机械、封装和可订购信息 ....................................... 21
4 修订历史记录
Changes from Revision A (December 2014) to Revision B
Page
•
已将低压降特性要点的值从 122mV 改为 125mV，以匹配电气特性中的值............................................................................ 1
•
已更改首页曲线图中的 VOUT 标签 ........................................................................................................................................... 1
•
Changed min junction temperature value from –55 to –40 in Absolute Maximum Ratings table .......................................... 4
•
Changed max junction temperature value from 160 to 150 in Absolute Maximum Ratings table ........................................ 4
•
Changed max storage temperature value from 150 to 160 in Absolute Maximum Ratings table.......................................... 4
•
Added test condition to line regulation parameter in Electrical Characteristics table............................................................. 5
•
Changed unit for line regulation parameter from mV/V to mV ............................................................................................... 5
•
Added test condition to load regulation parameter in Electrical Characteristics table .......................................................... 5
Changes from Original (October 2014) to Revision A
Page
•
已更改数据表首页的标题信息，以反映器件系列而非各个器件............................................................................................... 1
•
已将输入电压范围 特性 更改为列表中的第一个要点............................................................................................................... 1
•
已更改 首页的典型应用电路；修正了可选电容标识中的错误 ................................................................................................. 1
•
Changed format of I/O column contents and order of packages in Pin Functions table ....................................................... 3
•
Moved storage temperature range specification to Absolute Maximum Ratings table ......................................................... 4
•
Changed Handling Ratings table title to ESD Ratings, updated table format ........................................................................ 4
•
Added new first row to the VDO parameter in the Electrical Characteristics table .................................................................. 5
•
Changed condition text for Figure 34 .................................................................................................................................. 16
•
已添加 评估模块小节 ............................................................................................................................................................ 20
•
已删除 相关链接部分 ............................................................................................................................................................ 20
2
Copyright © 2014–2015, Texas Instruments Incorporated
TLV733P
www.ti.com.cn
ZHCSD13B – OCTOBER 2014 – REVISED NOVEMBER 2015
5 Pin Configuration and Functions
DBV Package
5-Pin SOT-23
Top View
IN
1
GND
2
EN
3
5
OUT
4
NC
DQN Package
4-Pin 1-mm × 1-mm X2SON
Top View
IN
EN
4
3
1
2
OUT
GND
Pin Functions
PIN
NO.
NAME
DQN
DBV
I/O
DESCRIPTION
Enable pin. Drive EN greater than 0.9 V to turn on the regulator.
Drive EN less than 0.35 V to put the LDO into shutdown mode.
EN
3
3
I
GND
2
2
—
IN
4
1
I
NC
N/A
4
—
No internal connection
OUT
1
5
O
Regulated output voltage pin. For best transient response, use a small 1-μF
ceramic capacitor from this pin to ground.
See the Input and Output Capacitor Selection section for more details.
—
—
The thermal pad is electrically connected to the GND node.
Connect to the GND plane for improved thermal performance.
Thermal pad
Copyright © 2014–2015, Texas Instruments Incorporated
Ground pin
Input pin. A small capacitor is recommended from this pin to ground.
See the Input and Output Capacitor Selection section for more details.
3
TLV733P
ZHCSD13B – OCTOBER 2014 – REVISED NOVEMBER 2015
www.ti.com.cn
6 Specifications
6.1 Absolute Maximum Ratings
over operating junction temperature range (unless otherwise noted); all voltages are with respect to GND (1)
Voltage
Current
MIN
MAX
VIN
–0.3
6.0
VEN
–0.3
VIN + 0.3
VOUT
–0.3
3.6
IOUT
V
Internally limited
Output short-circuit duration
A
Indefinite
Temperature
(1)
UNIT
Operating junction, TJ
–40
150
Storage, Tstg
–65
160
°C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
±2000
Charged-device model (CDM), per JEDEC specification JESD22-C101 (2)
±500
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating junction temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
Input range, VIN
1.4
5.5
V
Output range, VOUT
1.0
3.3
V
Output current, IOUT
0
300
mA
Enable range, VEN
0
VIN
V
–40
125
°C
Junction temperature, TJ
6.4 Thermal Information
TLV733P
THERMAL METRIC (1)
DQN (X2SON)
DBV (SOT-23)
UNIT
4 PINS
5 PINS
RθJA
Junction-to-ambient thermal resistance
218.6
228.4
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
164.8
151.5
°C/W
RθJB
Junction-to-board thermal resistance
164.9
55.8
°C/W
ψJT
Junction-to-top characterization parameter
5.6
31.4
°C/W
ψJB
Junction-to-board characterization parameter
163.9
54.8
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
131.4
N/A
°C/W
(1)
4
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
Copyright © 2014–2015, Texas Instruments Incorporated
TLV733P
www.ti.com.cn
ZHCSD13B – OCTOBER 2014 – REVISED NOVEMBER 2015
6.5 Electrical Characteristics
At operating temperature range (TJ = –40°C to +125°C), VIN = VOUT(nom) + 0.5 V or 2.0 V (whichever is greater), IOUT = 1 mA,
VEN = VIN, and CIN = COUT = 1 µF (unless otherwise noted). All typical values at TJ = 25°C.
PARAMETER
VIN
TEST CONDITIONS
Input voltage
DC output accuracy
UVLO
Undervoltage lockout
ΔVO(ΔVI)
Line regulation
ΔVO(ΔIO)
Load regulation
Dropout voltage (1)
VDO
MIN
TYP
1.4
TJ = 25°C
–40°C ≤ TJ ≤ +125°C
5.5
–1%
1%
–1.4%
1.4%
VIN rising
1.3
VIN falling
1.25
ΔVI = VIN(nom) to VIN(nom) + 1
1
DQN package
16
DBV package
25
ΔIO = 1 mA to
300 mA
VOUT = 0.98 ×
VOUT(nom),
IOUT = 300 mA
MAX
1.4
V
V
mV
mV
VOUT = 1.1 V, –40°C ≤ TJ ≤ 85°C
460
1.2 V ≤ VOUT < 1.5 V, –40°C ≤ TJ ≤ 85°C
420
1.5 V ≤ VOUT < 1.8 V, –40°C ≤ TJ ≤ 85°C
370
1.8 V ≤ VOUT < 2.5 V, –40°C ≤ TJ ≤ 85°C
270
2.5 V ≤ VOUT < 3.3 V, –40°C ≤ TJ ≤ 85°C
UNIT
260
VOUT = 3.3 V, –40°C ≤ TJ ≤ 85°C
125
220
1.2 V ≤ VOUT < 1.5 V, –40°C ≤ TJ ≤ 125°C
450
1.5 V ≤ VOUT < 1.8 V, –40°C ≤ TJ ≤ 125°C
400
1.8 V ≤ VOUT < 2.5 V, –40°C ≤ TJ ≤ 125°C
300
2.5 V ≤ VOUT < 3.3 V, –40°C ≤ TJ ≤ 125°C
290
VOUT = 3.3 V, –40°C ≤ TJ ≤ 125°C
mV
125
270
IGND
Ground pin current
IOUT = 0 mA
34
60
µA
ISHDN
Shutdown current
VEN ≤ 0.35 V, 2.0 V ≤ VIN ≤ 5.5 V, TJ = 25°C
0.1
1
µA
f = 100 Hz
68
PSRR
Power-supply
rejection ratio
VOUT = 1.8 V,
IOUT = 300 mA
f = 10 kHz
35
f = 100 kHz
28
Vn
Output noise voltage
VEN(HI)
EN pin high voltage
(enabled)
VEN(LO)
EN pin low voltage
(disabled)
IEN
EN pin current
tSTR
Startup time
Pull-down resistor
ILIM
Output current limit
IOS
Short-circuit current
limit
Tsd
Thermal shutdown
(1)
BW = 10 Hz to 100 kHz, VOUT = 1.8 V, IOUT = 10 mA
0.9
dB
120
µVRMS
0.63
V
0.52
VEN = 5.5 V
0.01
Time from EN assertion to 98% × VOUT(nom), VOUT = 1.0
V, IOUT = 0 mA
250
Time from EN assertion to 98% × VOUT(nom), VOUT = 3.3
V, IOUT = 0 mA
800
VIN = 2.3 V
120
0.35
V
µA
µs
360
Ω
mA
VOUT shorted to GND, VOUT = 1.0 V
150
VOUT shorted to GND, VOUT = 3.3 V
170
Shutdown, temperature increasing
160
Reset, temperature decreasing
140
mA
°C
Dropout voltage for the TLV73310P is not valid at room temperature. The device engages undervoltage lockout (VIN < UVLOFALL) before
the dropout condition is met.
Copyright © 2014–2015, Texas Instruments Incorporated
5
TLV733P
ZHCSD13B – OCTOBER 2014 – REVISED NOVEMBER 2015
www.ti.com.cn
6.6 Typical Characteristics
at operating temperature range (TJ = –40°C to +125°C), VIN = VOUT(nom) + 0.5 V or 2.0 V (whichever is greater), IOUT = 1 mA,
VEN = VIN, and CIN = COUT = 1 µF (unless otherwise noted)
1.03
1.004
TJ = -40 qC
TJ = 0 qC
TJ = 25 qC
TJ = 85 qC
TJ = 125 qC
1.02
0.996
VOUT (V)
VOUT (V)
1.01
TJ = -40 qC
TJ = 0 qC
TJ = 25 qC
TJ = 85 qC
TJ = 125 qC
1
1
0.99
0.992
0.988
0.98
0.984
0.97
0.98
0.96
0.976
0
50
100
150
200
Current (mA)
250
300
0
50
TLV73310PDBV
Figure 1. 1.0-V Load Regulation vs IOUT and Temperature
300
D005
1.8
TJ = -40 qC
TJ = 0 qC
TJ = 25 qC
TJ = 85 qC
TJ = 125 qC
1.797
1.794
VOUT (V)
1.8
VOUT (V)
250
Figure 2. 1.0-V Load Regulation vs IOUT and Temperature
TJ = -40 qC
TJ = 0 qC
TJ = 25 qC
TJ = 85 qC
TJ = 125 qC
1.808
1.792
1.784
1.791
1.788
1.776
1.785
1.768
1.782
1.76
1.779
0
50
100
150
200
Current (mA)
250
300
0
50
100
D002
TLV73318PDBV
150
200
Current (mA)
250
300
D006
TLV73318PDQN
Figure 3. 1.8-V Load Regulation vs IO and Temperature
Figure 4. 1.8-V Load Regulation vs IOUT and Temperature
3.345
3.32
TJ = -40 qC
TJ = 0 qC
TJ = 25 qC
TJ = 85 qC
TJ = 125 qC
3.33
TJ = -40 qC
TJ = 0 qC
TJ = 25 qC
TJ = 85 qC
TJ = 125 qC
3.312
3.304
VOUT (V)
3.315
VOUT (V)
150
200
Current (mA)
TLV73310PDQN
1.816
3.3
3.285
3.296
3.288
3.27
3.28
3.255
3.272
3.24
3.264
0
50
100
150
200
Current (mA)
250
300
D003
TLV73333PDBV
Figure 5. 3.3-V Load Regulation vs IOUT and Temperature
6
100
D001
0
50
100
150
200
Current (mA)
250
300
D007
TLV73333PDQN
Figure 6. 3.3-V Load Regulation vs IOUT and Temperature
Copyright © 2014–2015, Texas Instruments Incorporated
TLV733P
www.ti.com.cn
ZHCSD13B – OCTOBER 2014 – REVISED NOVEMBER 2015
Typical Characteristics (continued)
at operating temperature range (TJ = –40°C to +125°C), VIN = VOUT(nom) + 0.5 V or 2.0 V (whichever is greater), IOUT = 1 mA,
VEN = VIN, and CIN = COUT = 1 µF (unless otherwise noted)
390
400
TJ = -40 qC
TJ = 0 qC
TJ = 25 qC
TJ = 85 qC
TJ = 125 qC
350
330
300
VDO (mV)
VDO (mV)
300
TJ = -40 qC
TJ = 0 qC
TJ = 25 qC
TJ = 85 qC
TJ = 125 qC
360
250
200
270
240
210
180
150
150
120
100
90
60
50
0
30
60
90
120 150 180
Current (mA)
210
240
270
0
300
30
60
90
D024
TLV73312PDBV
210
240
270
300
D025
TLV73312PDQN
Figure 7. 1.2-V Dropout Voltage vs IOUT and Temperature
Figure 8. 1.2-V Dropout Voltage vs IOUT and Temperature
300
275
TJ = -40 qC
TJ = 0 qC
TJ = 25 qC
TJ = 85 qC
TJ = 125 qC
250
225
200
TJ = -40 qC
TJ = 0 qC
TJ = 25 qC
TJ = 85 qC
TJ = 125 qC
250
200
175
VDO (mV)
VDO (mV)
120 150 180
Current (mA)
150
125
100
150
100
75
50
50
25
0
0
0
30
60
90
120 150 180
Current (mA)
210
240
270
300
0
30
60
90
D008
TLV73318PDBV
210
240
270
300
D010
TLV73318PDQN
Figure 9. 1.8-V Dropout Voltage vs IOUT and Temperature
Figure 10. 1.8-V Dropout Voltage vs IOUT and Temperature
300
300
TJ = -40 qC
TJ = 0 qC
TJ = 25 qC
TJ = 85 qC
TJ = 125 qC
250
TJ = -40 qC
TJ = 0 qC
TJ = 25 qC
TJ = 85 qC
TJ = 125 qC
250
200
VDO (mV)
200
VDO (mV)
120 150 180
Current (mA)
150
150
100
100
50
50
0
0
0
30
60
90
120 150 180
Current (mA)
210
240
270
300
D009
TLV73333PDBV
Figure 11. 3.3-V Dropout Voltage vs IOUT and Temperature
Copyright © 2014–2015, Texas Instruments Incorporated
0
30
60
90
120 150 180
Current (mA)
210
240
270
300
D011
TLV73333PDQN
Figure 12. 3.3-V Dropout Voltage vs IOUT and Temperature
7
TLV733P
ZHCSD13B – OCTOBER 2014 – REVISED NOVEMBER 2015
www.ti.com.cn
Typical Characteristics (continued)
at operating temperature range (TJ = –40°C to +125°C), VIN = VOUT(nom) + 0.5 V or 2.0 V (whichever is greater), IOUT = 1 mA,
VEN = VIN, and CIN = COUT = 1 µF (unless otherwise noted)
1.816
70
TJ = -40 qC
TJ = 0 qC
TJ = 25 qC
TJ = 85 qC
TJ = 125 qC
1.814
1.812
60
55
1.808
IGND (PA)
VOUT (V)
1.81
TJ = -40 qC
TJ = 0 qC
TJ = 25 qC
TJ = 85 qC
TJ = 125 qC
65
1.806
1.804
50
45
40
1.802
1.8
35
1.798
30
1.796
25
2
2.5
3
3.5
4
VIN (V)
4.5
5
5.5
0
30
60
90
120 150 180
IOUT (mA)
D019
D010
210
240
270
300
D012
TLV73318PDBV
Figure 13. 1.8-V Regulation vs VIN (Line Regulation) and
Temperature
Figure 14. Ground Pin Current vs IOUT and Temperature
100
50
40
TJ = 25 qC
20
10
5
24
ISHDN (PA)
IGND (PA)
32
16
2
1
0.5
0.2
0.1
0.05
8
0
0.5
TJ = -40 qC
TJ = 0 qC
TJ = 25 qC
TJ = 85 qC
TJ = 125 qC
0.02
0.01
1
1.5
2
2.5
3
3.5
VIN (V)
4
4.5
5
0
5.5
1
D013
2
3
VIN (V)
4
5
6
D015
IOUT = 0 mA
Figure 15. Ground Pin Current vs VIN
Figure 16. Shutdown Current vs VIN and Temperature
1
0.675
VEN(LO)
VEN(HI)
0.9
0.625
0.8
0.6
0.7
0.575
0.6
VOUT (V)
Enable Threshold (V)
0.65
0.55
0.525
0.5
0.4
0.5
0.3
0.475
0.2
0.45
0.1
0.425
-40
-20
0
20
40
60
TJ (qC)
80
100
120
140
D014
TJ = -40 qC
TJ = 0 qC
TJ = 25 qC
TJ = 85 qC
TJ = 125 qC
0
150 200 250 300 350 400 450 500 550 600 650 700
Foldback Current Limit (mA)
D023
TLV73310PDBV
Figure 17. Enable Threshold vs Temperature
8
Figure 18. 1.0-V Foldback Current Limit vs
IOUT and Temperature
Copyright © 2014–2015, Texas Instruments Incorporated
TLV733P
www.ti.com.cn
ZHCSD13B – OCTOBER 2014 – REVISED NOVEMBER 2015
Typical Characteristics (continued)
at operating temperature range (TJ = –40°C to +125°C), VIN = VOUT(nom) + 0.5 V or 2.0 V (whichever is greater), IOUT = 1 mA,
VEN = VIN, and CIN = COUT = 1 µF (unless otherwise noted)
2
1.75
TJ = -40 qC
TJ = 0 qC
TJ = 25 qC
TJ = 85 qC
TJ = 125 qC
3
2.5
1.25
VOUT (V)
VOUT (V)
1.5
3.5
TJ = -40 qC
TJ = 0 qC
TJ = 25 qC
TJ = 85 qC
TJ = 125 qC
1
2
1.5
0.75
1
0.5
0.5
0.25
0
150
200
250
300
350
400
Foldback Current Limit (mA)
450
0
150
500
200
D021
TLV73318PDBV
450
500
D022
TLV73333PDBV
Figure 19. 1.8-V Foldback Current Limit vs
IOUT and Temperature
Figure 20. 3.3-V Foldback Current Limit vs
IOUT and Temperature
80
10
No Output Capacitor
1 PF Output Capacitor
VOUT = 1 V
VOUT = 1.8 V
VOUT = 3.3 V
5
Noise Density (PV/—Hz)
60
PSRR (dB)
250
300
350
400
Foldback Current Limit (mA)
40
20
2
1
0.5
0.2
0.1
0.05
0.02
0.01
0
10 20
50 100
1000
10000
Frequency (Hz)
100000
1000000
D017
TLV73318PDQN, IOUT = 300 mA
Figure 21. Power-Supply Rejection Ratio vs Frequency
VIN (2 V/div)
VOUT (1 V/div,
AC Coupled)
0.005
10 20
50 100
1000
10000
Frequency (Hz)
100000
1000000
Figure 22. Output Spectral Noise Density
VIN (2 V/div)
VOUT (1 V/div,
AC Coupled)
Time (20 µs/div)
Time (20 µs/div)
TLV73318PDBV, IOUT = 10 mA, 1-µF output capacitor
TLV73318PDBV, IOUT = 300 mA, 1-µF output capacitor
Figure 23. Line Transient
Copyright © 2014–2015, Texas Instruments Incorporated
D016
IOUT = 300 mA
Figure 24. Line Transient
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Typical Characteristics (continued)
at operating temperature range (TJ = –40°C to +125°C), VIN = VOUT(nom) + 0.5 V or 2.0 V (whichever is greater), IOUT = 1 mA,
VEN = VIN, and CIN = COUT = 1 µF (unless otherwise noted)
VOUT (200 mV/div,
AC Coupled)
VOUT (200 mV/div,
AC Coupled)
ILOAD (100 mA/div)
ILOAD (100 mA/div)
Time (20 µs/div)
Time (20 µs/div)
TLV73310PDBV, VIN = 2.0 V, 1-µF output capacitor, output
current slew rate = 0.25 A/µs
TLV73310PDBV, VIN = 2.0 V, no output capacitor, output current
slew rate = 0.25 A/µs
Figure 25. 1.0-V, 50-mA to 300-mA Load Transient
Figure 26. 1.0 V, 50-mA to 300-mA Load Transient
VOUT (100 mV/div,
AC Coupled)
VOUT (100 mV/div,
AC coupled)
ILOAD (100 mA/div)
ILOAD (200 mA/div)
Time (20 µs/div)
Time (50 µs/div)
TLV73333PDBV, VIN = 3.8 V,1-µF output capacitor, output current
slew rate = 0.25 A/µs
TLV73333PDBV, VIN = 3.8 V, no output capacitor, output current
slew rate = 0.25 A/µs
Figure 27. 3.3 V, 50-mA to 300-mA Load Transient
Figure 28. 3.3 V, 50-mA to 300-mA Load Transient
VEN (500 mV/div)
VIN (1 V/div)
VOUT (1 V/div)
ILOAD (200 mA/div)
Time (100 µs/div)
TLV73318PDBV, RL = 6.2 Ω, VEN = VIN, 1-µF output capacitor
Figure 29. VIN Power-Up and Power-Down
10
VOUT (500 mV/div)
Time (100 µs/div)
TLV73318PDBV, RL = 6.2 Ω, 1-µF output capacitor
Figure 30. Startup with EN
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Typical Characteristics (continued)
at operating temperature range (TJ = –40°C to +125°C), VIN = VOUT(nom) + 0.5 V or 2.0 V (whichever is greater), IOUT = 1 mA,
VEN = VIN, and CIN = COUT = 1 µF (unless otherwise noted)
VOUT (500 mV/div)
VEN (500 mV/div)
VOUT (500 mV/div)
ILOAD (200 mA/div)
Time (100 µs/div)
Time (100 µs/div)
TLV73318PDBV, IOUT = 300 mA, 1-µF output capacitor
TLV73318PDBV, 1-µF output capacitor
Figure 31. Shutdown Response with Enable
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Figure 32. Foldback Current Limit Response
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7 Detailed Description
7.1 Overview
The TLV733 belongs to a new family of next-generation, low-dropout regulators (LDOs). These devices consume
low quiescent current and deliver excellent line and load transient performance. These characteristics, combined
with low noise, good PSRR with low dropout voltage, make this family of devices ideal for portable consumer
applications.
This family of regulators offers foldback current limit, shutdown, and thermal protection. The operating junction
temperature for this family of devices is –40°C to 125°C.
7.2 Functional Block Diagram
IN
OUT
Current
Limit
Thermal
Shutdown
UVLO
EN
120 W
Bandgap
Logic
TLV733
GND
12
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7.3 Feature Description
7.3.1 Undervoltage Lockout (UVLO)
The TLV733 uses an undervoltage lockout (UVLO) circuit that disables the output until the input voltage is
greater than the rising UVLO voltage, UVLORISE. This circuit ensures that the device does not exhibit any
unpredictable behavior when the supply voltage is lower than the operational range of the internal circuitry.
During UVLO disable, the output is connected to ground with a 120-Ω pulldown resistor.
7.3.2 Shutdown
The enable pin (EN) is active high. Enable the device by forcing the EN pin to exceed VEN(HI) (0.9 V, minimum).
Turn off the device by forcing the EN pin to drop below 0.35 V. If shutdown capability is not required, connect EN
to IN.
The TLV733 has an internal pulldown MOSFET that connects a 120-Ω resistor to ground when the device is
disabled. The discharge time after disabling depends on the output capacitance (COUT) and the load resistance
(RL) in parallel with the 120-Ω pulldown resistor. The time constant is calculated in Equation 1:
120 · RL
t=
· COUT
120 + RL
(1)
7.3.3 Internal Foldback Current Limit
The TLV733 has an internal foldback current limit that protects the regulator during fault conditions. The current
allowed through the device is reduced as the output voltage falls. When the output is shorted, the LDO supplies a
typical current of 150 mA. The output voltage is not regulated when the device is in current limit. In this condition,
the output voltage is the product of the regulated current and the load resistance. When the device output is
shorted, the PMOS pass transistor dissipates power [(VIN – VOUT) × IOS] until thermal shutdown is triggered and
the device turns off. After the device cools down, the internal thermal shutdown circuit turns the device back on.
If the fault condition continues, the device cycles between current limit and thermal shutdown. See the Thermal
Information table for more details.
The foldback current-limit circuit limits the current allowed through the device to current levels lower than the
minimum current limit at nominal VOUT current limit (ILIM) during startup. See Figure 18 to Figure 20 for typical
foldback current limit values. If the output is loaded by a constant-current load during startup, or if the output
voltage is negative when the device is enabled, then the load current demanded by the load may exceed the
foldback current limit and the device may not rise to the full output voltage. For constant-current loads, disable
the output load until the TLV733 has fully risen to its nominal output voltage.
The TLV733 PMOS pass element has an intrinsic body diode that conducts current when the voltage at the OUT
pin exceeds the voltage at the IN pin. Do not force the output voltage to exceed the input voltage because
excessively high current may flow through the body diode.
7.3.4 Thermal Shutdown
Thermal shutdown protection disables the output when the junction temperature rises to approximately 160°C.
Disabling the device eliminates the power dissipated by the device, allowing the device to cool. When the
junction temperature cools to approximately 140°C, the output circuitry is again enabled. Depending on power
dissipation, thermal resistance, and ambient temperature, the thermal protection circuit may cycle on and off.
This cycling limits regulator dissipation, protecting it from damage as a result of overheating.
Activating the thermal shutdown feature usually indicates excessive power dissipation as a result of the product
of the (VIN –VOUT) voltage and the load current. For reliable operation, limit junction temperature to 125°C
maximum. To estimate the margin of safety in a complete design, increase the ambient temperature until the
thermal protection is triggered; use worst-case loads and signal conditions.
The TLV733 internal protection circuitry protects against overload conditions but is not intended to be activated in
normal operation. Continuously running the TLV733 into thermal shutdown degrades device reliability.
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7.4 Device Functional Modes
7.4.1 Normal Operation
The device regulates to the nominal output voltage under the following conditions:
•
The input voltage has previously exceeded the UVLO rising voltage and has not decreased below the UVLO
falling threshold.
The input voltage is greater than the nominal output voltage added to the dropout voltage.
The enable voltage has previously exceeded the enable rising threshold voltage and not decreased below the
enable falling threshold.
The output current is less than the current limit.
The device junction temperature is less than the thermal shutdown temperature.
•
•
•
•
7.4.2 Dropout Operation
If the input voltage is lower than the nominal output voltage plus the specified dropout voltage, but all other
conditions are met for normal operation, the device operates in dropout mode. In this condition, the output
voltage is the same the input voltage minus the dropout voltage. The transient performance of the device is
significantly degraded because the pass device is in a triode state and no longer controls the current through the
LDO. Line or load transients in dropout may result in large output voltage deviations.
7.4.3 Disabled
The device is disabled under the following conditions:
• The input voltage is less than the UVLO falling voltage, or has not yet exceeded the UVLO rising threshold.
• The enable voltage is less than the enable falling threshold voltage or has not yet exceeded the enable rising
threshold.
• The device junction temperature is greater than the thermal shutdown temperature.
When the device is disabled, the active pulldown resistor discharges the output.
Table 1 shows the conditions that lead to the different modes of operation.
Table 1. Device Functional Mode Comparison
OPERATING MODE
PARAMETER
VIN
VEN
IOUT
TJ
Normal mode
VIN > VOUT(nom) + VDO
and VIN > UVLORISE
VEN > VEN(HI)
IOUT < ILIM
TJ < 160°C
Dropout mode
UVLORISE < VIN < VOUT(nom) + VDO
VEN > VEN(HI)
IOUT < ILIM
TJ < 160°C
VIN < UVLOFALL
VEN < VEN(LO)
—
TJ > 160°C
Disabled mode
(any true condition
disables the device)
14
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8 Application and Implementation
8.1 Application Information
8.1.1 Input and Output Capacitor Selection
The TLV733 uses an advanced internal control loop to obtain stable operation both with and without the use of
input or output capacitors. Dynamic performance is improved with the use of an output capacitor, and may be
improved with an input capacitor. An output capacitance of 0.1 μF or larger generally provides good dynamic
response. Use X5R- and X7R-type ceramic capacitors because these capacitors have minimal variation in value
and equivalent series resistance (ESR) over temperature.
Although an input capacitor is not required for stability, increased output impedance from the input supply may
compromise the performance of the TLV733. Good analog design practice is to connect a 0.1-µF to 1-µF
capacitor from IN to GND. This capacitor counteracts reactive input sources and improves transient response,
input ripple, and PSRR. Use an input capacitor if the source impedance is greater than 0.5 Ω. Use a higher-value
capacitor if large, fast, rise-time load transients are anticipated, or if the device is located several inches from the
input power source.
Figure 33 shows the transient performance improvements with an external 1-µF capacitor on the output versus
no output capacitor. The data in this figure are taken with an increasing load step from 50 mA to 300 mA, and the
peak output voltage deviation (load transient response) is measured. For low output current slew rates,
(< 0.1 A/µs), the transient performance of the device is similar with or without an output capacitor. As the current
slew rate is increased, the peak voltage deviation is significantly increased. For loads that exhibit fast current
slew rates above 0.1 A/µs, use an output capacitor. For best performance, the maximum recommended output
capacitance is 100 µF.
Peak Output Voltage Change (%VOUT)
35
30
1 PF COUT
COUT Removed
25
20
15
10
5
0
0.01
0.02 0.03 0.050.07 0.1
0.2 0.3
0.5 0.7
Output Load Transient Slew Rate (A/Ps)
1
D027
TLV73333PDBV, output current stepped from 50 mA to 300 mA, output voltage change measured at positive dI/dt
Figure 33. Output Voltage Deviation vs Load Step Slew Rate
Some applications benefit from the removal of the output capacitor. In addition to space and cost savings, the
removal of the output capacitor lowers inrush current as a result of eliminating the required current flow into the
output capacitor upon startup. In these cases, take care to ensure that the load is tolerant of the additional output
voltage deviations.
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Application Information (continued)
8.1.2 Dropout Voltage
The TLV733 uses a PMOS pass transistor to achieve low dropout. When (VIN – VOUT) is less than the dropout
voltage (VDO), the PMOS pass device is in the linear region of operation and the input-to-output resistance is the
RDS(ON) of the PMOS pass element. VDO scales approximately with output current because the PMOS device
behaves like a resistor in dropout mode. As with any linear regulator, PSRR and transient response degrade as
(VIN – VOUT) approaches dropout operation. See Figure 7 to Figure 12 for typical dropout values.
8.1.3 Power Dissipation
The ability to remove heat from the die is different for each package type, presenting different considerations in
the printed circuit board (PCB) layout. The PCB area around the device that is free of other components moves
the heat from the device to ambient air. Performance data for JEDEC high-K boards are given in the Thermal
Information table. Using heavier copper increases the effectiveness in removing heat from the device. The
addition of plated through-holes to heat-dissipating layers also improves heatsink effectiveness.
Power dissipation (PD) depends on input voltage and load conditions. PD is equal to the product of the output
current and voltage drop across the output pass element, as shown in Equation 2.
PD = (VIN – VOUT) × IOUT
(2)
Maximum Ambient Temperature (qC)
Figure 34 shows the maximum ambient temperature versus the power dissipation of the TLV733 in the DQN
package. This figure assumes the device is soldered on JEDEC standard high-K layout with no airflow over the
board. Actual board thermal impedances vary widely. If the application requires high power dissipation, having a
thorough understanding of the board temperature and thermal impedances is helpful to make sure the TLV733
does not operate continuously above a junction temperature of 125°C.
125
120
115
110
105
100
95
90
85
80
75
70
65
60
55
TLV733 DQN, High-K Layout
TLV733 DBV, High-K Layout
0
0.03 0.06 0.09 0.12 0.15 0.18 0.21 0.24 0.27
Power Dissipation (W)
0.3
D028
TLV733, high-K layout
Figure 34. Maximum Ambient Temperature vs Device Power Dissipation
16
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8.2 Typical Applications
8.2.1 DC-DC Converter Post Regulation
VOUT
1.8 V
IN
CIN
1 µF
DC-DC
Converter
OUT
VOUT
1.5 V
COUT
1 µF
TLV733
EN
Load
GND
ON
OFF
Figure 35. DC-DC Converter Post Regulation
8.2.1.1 Design Requirements
Table 2. Design Parameters
PARAMETER
DESIGN REQUIREMENT
Input voltage
1.8 V, ±5%
Output voltage
1.5 V, ±1%
Output current
200-mA dc, 300-mA peak
Output voltage transient deviation
< 10%, 1-A/µs load step from 50 mA to 200 mA
Maximum ambient temperature
85°C
8.2.1.2 Design Considerations
Input and output capacitors are required to achieve the output voltage transient requirements. Capacitance
values of 1 µF are selected to give the maximum output capacitance in a small, low-cost package.
Figure 7 shows the 1.2-V option dropout voltage. Given that dropout voltages are higher for lower output-voltage
options, and given that the 1.2-V option dropout voltage is typically less than 300 mV at 125°C, then the 1.5-V
option dropout voltage is typically less than 300 mV at 125°C.
Verify that the maximum junction temperature is not exceeded by referring to Figure 34.
8.2.1.3 Application Curve
VIN (500 mV/div)
VOUT (500 mV/div)
IOUT (100 mA/div)
Time (50 µs/div)
Figure 36. 1.8-V to 1.5-V Regulation at 300 mA
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8.2.2 Capacitor-Free Operation from Battery Input Supply
IN
OUT
TLV733
VBAT
Load
EN
GND
Figure 37. Capacitor-Free Operation from Battery Input Supply
8.2.2.1 Design Requirements
Table 3. Design Parameters
PARAMETER
DESIGN REQUIREMENT
Input voltage
3.0 V to 1.8 V (two 1.5-V batteries)
Output voltage
1.0 V, ±1%
Input current
200 mA, maximum
Output load
100-mA dc
Maximum ambient temperature
70°C
8.2.2.2 Design Considerations
An input capacitor is not required for this design because of the low impedance connection directly to the battery.
No output capacitor allows for the minimal possible inrush current during startup, ensuring the 200-mA maximum
input current is not exceeded.
Verify that the maximum junction temperature is not exceeded by referring to Figure 34.
8.2.2.3 Application Curve
VIN (1 V/div)
VOUT (500 mV/div)
IIN (100 mA/div)
Time (50 µs/div)
Figure 38. No Inrush Startup, 3.0-V to 1.0-V Regulation
18
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9 Power-Supply Recommendations
Connect a low output impedance power supply directly to the IN pin of the TLV733. Inductive impedances
between the input supply and the IN pin can create significant voltage excursions at the IN pin during startup or
load transient events. If inductive impedances are unavoidable, use an input capacitor.
10 Layout
10.1 Layout Guidelines
•
•
•
•
Place input and output capacitors as close to the device as possible.
Use copper planes for device connections, in order to optimize thermal performance.
Place thermal vias around the device to distribute the heat.
Do not place a thermal via directly beneath the thermal pad of the DQN package. A via can wick solder or
solder paste away from the thermal pad joint during the soldering process, leading to a compromised solder
joint on the thermal pad.
10.2 Layout Examples
VOUT
VIN
TLV733
1
4
COUT*
CIN*
3
2
GND PLANE
Represents via used for
application specific connections
*not required
Figure 39. Layout Example for the DQN package
VOUT
VIN
1
CIN*
5
COUT*
2
3
4
GND PLANE
Represents via used for
application specific connections
*not required
Figure 40. Layout Example for the DBV Package
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11 器件和文档支持
11.1 器件支持
11.1.1 开发支持
11.1.1.1 评估模块
评估模块 (EVM) 可与 TLV733 配套使用，帮助评估初始电路性能。TLV73312PEVM-643 评估模块（和相关的用户
指南）可在德州仪器 (TI) 网站上的产品文件夹中获取，也可直接从 TI 网上商店购买。
11.1.2 器件命名规则
表 4. 器件命名规则 (1) (2)
(1)
(2)
产品
VOUT
TLV733xx(x)Pyyyz
xx(x) 为标称输出电压。对于分辨率为 100mV 的输出电压，订货编号中使用两位数字；否则，使用三位数
字（例如，28 = 2.8V；125 = 1.25V）。
P 表示有源输出放电功能。TLV733 系列的所有成员在被禁用时都可以使输出进行有源放电。
yyy 为封装标识符。
z 为封装数量。R 表示卷（3000 片），T 表示带（250 片）。
要获得最新的封装和订货信息，请参见本文档末尾的封装选项附录，或者访问器件产品文件夹（www.ti.com.cn）。
可提供 1.0V 至 3.3V 范围内的输出电压（以 50mV 为单位增量）。更多详细信息及可用性，请联系制造商。
11.2 文档支持
11.2.1 相关文档
《TLV73312PDQN-643 评估模块用户指南》，SBVU024
11.3 商标
All trademarks are the property of their respective owners.
11.4 静电放电警告
ESD 可能会损坏该集成电路。德州仪器 (TI) 建议通过适当的预防措施处理所有集成电路。如果不遵守正确的处理措施和安装程序 , 可
能会损坏集成电路。
ESD 的损坏小至导致微小的性能降级 , 大至整个器件故障。 精密的集成电路可能更容易受到损坏 , 这是因为非常细微的参数更改都可
能会导致器件与其发布的规格不相符。
11.5 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
20
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12 机械、封装和可订购信息
以下页中包括机械、封装和可订购信息。这些信息是针对指定器件可提供的最新数据。这些数据会在无通知且不对
本文档进行修订的情况下发生改变。欲获得该数据表的浏览器版本，请查阅左侧的导航栏。
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PACKAGE OUTLINE
DQN0004A
X2SON - 0.4 mm max height
PLASTIC SMALL OUTLINE - NO LEAD
4215302/C 11/2015
NOTES:
1.
2.
3.
4.
22
All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
This drawing is subject to change without notice.
The package thermal pad must be soldered to the printed circuit board for thermal and mechanical performance.
Features may not exist. Recommend use of pin 1 marking on top of package for orientation purposes.
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EXAMPLE BOARD LAYOUT
DQN0004A
X2SON - 0.4 mm max height
PLASTIC SMALL OUTLINE - NO LEAD
4215302/C 11/2015
NOTES: (continued)
5.
This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature
number SLUA271 (www.ti.com/lit/slua271) .
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EXAMPLE STENCIL DESIGN
DQN0004A
X2SON - 0.4 mm max height
PLASTIC SMALL OUTLINE - NO LEAD
4215302/C 11/2015
NOTES: (continued)
6.
24
Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
版权 © 2014–2015, Texas Instruments Incorporated
重要声明
德州仪器(TI) 及其下属子公司有权根据 JESD46 最新标准, 对所提供的产品和服务进行更正、修改、增强、改进或其它更改， 并有权根据
JESD48 最新标准中止提供任何产品和服务。客户在下订单前应获取最新的相关信息, 并验证这些信息是否完整且是最新的。所有产品的销售
都遵循在订单确认时所提供的TI 销售条款与条件。
TI 保证其所销售的组件的性能符合产品销售时 TI 半导体产品销售条件与条款的适用规范。仅在 TI 保证的范围内，且 TI 认为 有必要时才会使
用测试或其它质量控制技术。除非适用法律做出了硬性规定，否则没有必要对每种组件的所有参数进行测试。
TI 对应用帮助或客户产品设计不承担任何义务。客户应对其使用 TI 组件的产品和应用自行负责。为尽量减小与客户产品和应 用相关的风险，
客户应提供充分的设计与操作安全措施。
TI 不对任何 TI 专利权、版权、屏蔽作品权或其它与使用了 TI 组件或服务的组合设备、机器或流程相关的 TI 知识产权中授予 的直接或隐含权
限作出任何保证或解释。TI 所发布的与第三方产品或服务有关的信息，不能构成从 TI 获得使用这些产品或服 务的许可、授权、或认可。使用
此类信息可能需要获得第三方的专利权或其它知识产权方面的许可，或是 TI 的专利权或其它 知识产权方面的许可。
对于 TI 的产品手册或数据表中 TI 信息的重要部分，仅在没有对内容进行任何篡改且带有相关授权、条件、限制和声明的情况 下才允许进行
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在转售 TI 组件或服务时，如果对该组件或服务参数的陈述与 TI 标明的参数相比存在差异或虚假成分，则会失去相关 TI 组件 或服务的所有明
示或暗示授权，且这是不正当的、欺诈性商业行为。TI 对任何此类虚假陈述均不承担任何责任或义务。
客户认可并同意，尽管任何应用相关信息或支持仍可能由 TI 提供，但他们将独力负责满足与其产品及在其应用中使用 TI 产品 相关的所有法
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及其后果、降低有可能造成人身伤害的故障的发生机率并采取适当的补救措施。客户将全额赔偿因 在此类安全关键应用中使用任何 TI 组件而
对 TI 及其代理造成的任何损失。
在某些场合中，为了推进安全相关应用有可能对 TI 组件进行特别的促销。TI 的目标是利用此类组件帮助客户设计和创立其特 有的可满足适用
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TI 组件未获得用于 FDA Class III（或类似的生命攸关医疗设备）的授权许可，除非各方授权官员已经达成了专门管控此类使 用的特别协议。
只有那些 TI 特别注明属于军用等级或“增强型塑料”的 TI 组件才是设计或专门用于军事/航空应用或环境的。购买者认可并同 意，对并非指定面
向军事或航空航天用途的 TI 组件进行军事或航空航天方面的应用，其风险由客户单独承担，并且由客户独 力负责满足与此类使用相关的所有
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TI 已明确指定符合 ISO/TS16949 要求的产品，这些产品主要用于汽车。在任何情况下，因使用非指定产品而无法达到 ISO/TS16949 要
求，TI不承担任何责任。
产品
应用
数字音频
www.ti.com.cn/audio
通信与电信
www.ti.com.cn/telecom
放大器和线性器件
www.ti.com.cn/amplifiers
计算机及周边
www.ti.com.cn/computer
数据转换器
www.ti.com.cn/dataconverters
消费电子
www.ti.com/consumer-apps
DLP® 产品
www.dlp.com
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www.ti.com/energy
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www.ti.com.cn/dsp
工业应用
www.ti.com.cn/industrial
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www.ti.com.cn/clockandtimers
医疗电子
www.ti.com.cn/medical
接口
www.ti.com.cn/interface
安防应用
www.ti.com.cn/security
逻辑
www.ti.com.cn/logic
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www.ti.com.cn/automotive
电源管理
www.ti.com.cn/power
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www.ti.com.cn/video
微控制器 (MCU)
www.ti.com.cn/microcontrollers
RFID 系统
www.ti.com.cn/rfidsys
OMAP应用处理器
www.ti.com/omap
无线连通性
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IMPORTANT NOTICE
邮寄地址： 上海市浦东新区世纪大道1568 号，中建大厦32 楼邮政编码： 200122
Copyright © 2016, 德州仪器半导体技术（上海）有限公司
PACKAGE OPTION ADDENDUM
www.ti.com
9-Oct-2016
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
TLV73310PDBVR
ACTIVE
SOT-23
DBV
5
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
VCCQ
TLV73310PDBVT
ACTIVE
SOT-23
DBV
5
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
VCCQ
TLV73310PDQNR
ACTIVE
X2SON
DQN
4
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
FG
TLV73310PDQNT
ACTIVE
X2SON
DQN
4
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
FG
TLV73311PDBVR
ACTIVE
SOT-23
DBV
5
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
ZBLW
TLV73311PDBVT
ACTIVE
SOT-23
DBV
5
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
ZBLW
TLV73311PDQNR
ACTIVE
X2SON
DQN
4
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
GR
TLV73311PDQNT
ACTIVE
X2SON
DQN
4
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
GR
TLV73312PDBVR
ACTIVE
SOT-23
DBV
5
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
VCDQ
TLV73312PDBVT
ACTIVE
SOT-23
DBV
5
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
VCDQ
TLV73312PDQNR
ACTIVE
X2SON
DQN
4
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
FI
TLV73312PDQNR3
ACTIVE
X2SON
DQN
4
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
FI
TLV73312PDQNT
ACTIVE
X2SON
DQN
4
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
FI
TLV73315PDBVR
ACTIVE
SOT-23
DBV
5
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
VCFQ
TLV73315PDBVT
ACTIVE
SOT-23
DBV
5
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
VCFQ
TLV73315PDQNR
ACTIVE
X2SON
DQN
4
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
FJ
TLV73315PDQNR3
ACTIVE
X2SON
DQN
4
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
FJ
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
Orderable Device
9-Oct-2016
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
TLV73315PDQNT
ACTIVE
X2SON
DQN
4
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
FJ
TLV73318PDBVR
ACTIVE
SOT-23
DBV
5
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
VCGQ
TLV73318PDBVT
ACTIVE
SOT-23
DBV
5
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
VCGQ
TLV73318PDQNR
ACTIVE
X2SON
DQN
4
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
FK
TLV73318PDQNR3
ACTIVE
X2SON
DQN
4
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
FK
TLV73318PDQNT
ACTIVE
X2SON
DQN
4
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
FK
TLV73325PDBVR
ACTIVE
SOT-23
DBV
5
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
VCHQ
TLV73325PDBVT
ACTIVE
SOT-23
DBV
5
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
VCHQ
TLV73325PDQNR
ACTIVE
X2SON
DQN
4
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
FL
TLV73325PDQNT
ACTIVE
X2SON
DQN
4
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
FL
TLV733285PDBVR
ACTIVE
SOT-23
DBV
5
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
ZDRW
TLV733285PDBVT
ACTIVE
SOT-23
DBV
5
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
ZDRW
TLV733285PDQNR
ACTIVE
X2SON
DQN
4
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
GZ
TLV733285PDQNT
ACTIVE
X2SON
DQN
4
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
GZ
TLV73328PDBVR
ACTIVE
SOT-23
DBV
5
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
ZDQW
TLV73328PDBVT
ACTIVE
SOT-23
DBV
5
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
ZDQW
TLV73328PDQNR
ACTIVE
X2SON
DQN
4
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
GY
TLV73328PDQNR3
ACTIVE
X2SON
DQN
4
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
GY
Addendum-Page 2
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
Orderable Device
9-Oct-2016
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
TLV73328PDQNT
ACTIVE
X2SON
DQN
4
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
GY
TLV73330PDBVR
ACTIVE
SOT-23
DBV
5
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
ZDMW
TLV73330PDBVT
ACTIVE
SOT-23
DBV
5
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
ZDMW
TLV73330PDQNR
ACTIVE
X2SON
DQN
4
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
GW
TLV73330PDQNT
ACTIVE
X2SON
DQN
4
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
GW
TLV73333PDBVR
ACTIVE
SOT-23
DBV
5
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
VCIQ
TLV73333PDBVT
ACTIVE
SOT-23
DBV
5
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
VCIQ
TLV73333PDQNR
ACTIVE
X2SON
DQN
4
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
FM
TLV73333PDQNT
ACTIVE
X2SON
DQN
4
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
FM
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
Addendum-Page 3
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
(4)
9-Oct-2016
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 4
PACKAGE MATERIALS INFORMATION
www.ti.com
3-May-2017
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
TLV73310PDBVR
SOT-23
3000
178.0
9.0
DBV
5
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
3.23
3.17
1.37
4.0
8.0
Q3
TLV73310PDBVT
SOT-23
DBV
5
250
178.0
8.4
3.23
3.17
1.37
4.0
8.0
Q3
TLV73310PDQNR
X2SON
DQN
4
3000
180.0
9.5
1.16
1.16
0.5
4.0
8.0
Q2
TLV73310PDQNT
X2SON
DQN
4
250
180.0
9.5
1.16
1.16
0.5
4.0
8.0
Q2
TLV73311PDBVR
SOT-23
DBV
5
3000
178.0
9.0
3.23
3.17
1.37
4.0
8.0
Q3
TLV73311PDBVT
SOT-23
DBV
5
250
178.0
8.4
3.23
3.17
1.37
4.0
8.0
Q3
TLV73311PDQNR
X2SON
DQN
4
3000
180.0
9.5
1.16
1.16
0.5
4.0
8.0
Q2
TLV73311PDQNT
X2SON
DQN
4
250
180.0
9.5
1.16
1.16
0.5
4.0
8.0
Q2
TLV73312PDBVR
SOT-23
DBV
5
3000
178.0
9.0
3.23
3.17
1.37
4.0
8.0
Q3
TLV73312PDBVT
SOT-23
DBV
5
250
178.0
8.4
3.23
3.17
1.37
4.0
8.0
Q3
TLV73312PDQNR
X2SON
DQN
4
3000
180.0
9.5
1.16
1.16
0.5
4.0
8.0
Q2
TLV73312PDQNR3
X2SON
DQN
4
3000
180.0
9.5
1.16
1.16
0.5
4.0
8.0
Q3
TLV73312PDQNT
X2SON
DQN
4
250
180.0
9.5
1.16
1.16
0.5
4.0
8.0
Q2
TLV73315PDBVR
SOT-23
DBV
5
3000
178.0
9.0
3.23
3.17
1.37
4.0
8.0
Q3
TLV73315PDBVT
SOT-23
DBV
5
250
178.0
8.4
3.23
3.17
1.37
4.0
8.0
Q3
TLV73315PDQNR
X2SON
DQN
4
3000
180.0
9.5
1.16
1.16
0.5
4.0
8.0
Q2
TLV73315PDQNR3
X2SON
DQN
4
3000
180.0
9.5
1.16
1.16
0.5
4.0
8.0
Q3
TLV73315PDQNT
X2SON
DQN
4
250
180.0
9.5
1.16
1.16
0.5
4.0
8.0
Q2
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
3-May-2017
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
TLV73318PDBVR
SOT-23
DBV
5
3000
178.0
9.0
TLV73318PDBVT
SOT-23
DBV
5
250
178.0
8.4
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
3.23
3.17
1.37
4.0
8.0
Q3
3.23
3.17
1.37
4.0
8.0
Q3
TLV73318PDQNR
X2SON
DQN
4
3000
180.0
9.5
1.16
1.16
0.5
4.0
8.0
Q2
TLV73318PDQNR3
X2SON
DQN
4
3000
180.0
9.5
1.16
1.16
0.5
4.0
8.0
Q3
TLV73318PDQNT
X2SON
DQN
4
250
180.0
9.5
1.16
1.16
0.5
4.0
8.0
Q2
TLV73325PDBVR
SOT-23
DBV
5
3000
178.0
9.0
3.23
3.17
1.37
4.0
8.0
Q3
TLV73325PDBVT
SOT-23
DBV
5
250
178.0
8.4
3.23
3.17
1.37
4.0
8.0
Q3
TLV73325PDQNR
X2SON
DQN
4
3000
180.0
9.5
1.16
1.16
0.5
4.0
8.0
Q2
TLV73325PDQNT
X2SON
DQN
4
250
180.0
9.5
1.16
1.16
0.5
4.0
8.0
Q2
TLV733285PDBVR
SOT-23
DBV
5
3000
178.0
9.0
3.23
3.17
1.37
4.0
8.0
Q3
TLV733285PDBVT
SOT-23
DBV
5
250
178.0
9.0
3.23
3.17
1.37
4.0
8.0
Q3
TLV733285PDQNR
X2SON
DQN
4
3000
180.0
9.5
1.16
1.16
0.5
4.0
8.0
Q2
TLV733285PDQNT
X2SON
DQN
4
250
180.0
9.5
1.16
1.16
0.5
4.0
8.0
Q2
TLV73328PDBVR
SOT-23
DBV
5
3000
178.0
9.0
3.23
3.17
1.37
4.0
8.0
Q3
TLV73328PDBVT
SOT-23
DBV
5
250
178.0
9.0
3.23
3.17
1.37
4.0
8.0
Q3
TLV73328PDQNR
X2SON
DQN
4
3000
180.0
9.5
1.16
1.16
0.5
4.0
8.0
Q2
TLV73328PDQNR3
X2SON
DQN
4
3000
180.0
9.5
1.16
1.16
0.5
4.0
8.0
Q3
TLV73328PDQNT
X2SON
DQN
4
250
180.0
9.5
1.16
1.16
0.5
4.0
8.0
Q2
TLV73330PDBVR
SOT-23
DBV
5
3000
178.0
9.0
3.23
3.17
1.37
4.0
8.0
Q3
TLV73330PDBVT
SOT-23
DBV
5
250
178.0
9.0
3.23
3.17
1.37
4.0
8.0
Q3
TLV73330PDQNR
X2SON
DQN
4
3000
180.0
9.5
1.16
1.16
0.5
4.0
8.0
Q2
TLV73330PDQNT
X2SON
DQN
4
250
180.0
9.5
1.16
1.16
0.5
4.0
8.0
Q2
TLV73333PDBVR
SOT-23
DBV
5
3000
178.0
9.0
3.23
3.17
1.37
4.0
8.0
Q3
TLV73333PDBVT
SOT-23
DBV
5
250
178.0
8.4
3.23
3.17
1.37
4.0
8.0
Q3
TLV73333PDQNR
X2SON
DQN
4
3000
180.0
9.5
1.16
1.16
0.5
4.0
8.0
Q2
TLV73333PDQNT
X2SON
DQN
4
250
180.0
9.5
1.16
1.16
0.5
4.0
8.0
Q2
Pack Materials-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
3-May-2017
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
TLV73310PDBVR
SOT-23
DBV
5
3000
180.0
180.0
18.0
TLV73310PDBVT
SOT-23
DBV
5
250
180.0
180.0
18.0
TLV73310PDQNR
X2SON
DQN
4
3000
184.0
184.0
19.0
TLV73310PDQNT
X2SON
DQN
4
250
184.0
184.0
19.0
TLV73311PDBVR
SOT-23
DBV
5
3000
180.0
180.0
18.0
TLV73311PDBVT
SOT-23
DBV
5
250
180.0
180.0
18.0
TLV73311PDQNR
X2SON
DQN
4
3000
184.0
184.0
19.0
TLV73311PDQNT
X2SON
DQN
4
250
184.0
184.0
19.0
TLV73312PDBVR
SOT-23
DBV
5
3000
180.0
180.0
18.0
TLV73312PDBVT
SOT-23
DBV
5
250
180.0
180.0
18.0
TLV73312PDQNR
X2SON
DQN
4
3000
184.0
184.0
19.0
TLV73312PDQNR3
X2SON
DQN
4
3000
184.0
184.0
19.0
TLV73312PDQNT
X2SON
DQN
4
250
184.0
184.0
19.0
TLV73315PDBVR
SOT-23
DBV
5
3000
180.0
180.0
18.0
TLV73315PDBVT
SOT-23
DBV
5
250
180.0
180.0
18.0
TLV73315PDQNR
X2SON
DQN
4
3000
184.0
184.0
19.0
TLV73315PDQNR3
X2SON
DQN
4
3000
184.0
184.0
19.0
TLV73315PDQNT
X2SON
DQN
4
250
184.0
184.0
19.0
TLV73318PDBVR
SOT-23
DBV
5
3000
180.0
180.0
18.0
TLV73318PDBVT
SOT-23
DBV
5
250
180.0
180.0
18.0
Pack Materials-Page 3
PACKAGE MATERIALS INFORMATION
www.ti.com
3-May-2017
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
TLV73318PDQNR
X2SON
DQN
4
3000
184.0
184.0
19.0
TLV73318PDQNR3
X2SON
DQN
4
3000
184.0
184.0
19.0
TLV73318PDQNT
X2SON
DQN
4
250
184.0
184.0
19.0
TLV73325PDBVR
SOT-23
DBV
5
3000
180.0
180.0
18.0
TLV73325PDBVT
SOT-23
DBV
5
250
180.0
180.0
18.0
TLV73325PDQNR
X2SON
DQN
4
3000
184.0
184.0
19.0
TLV73325PDQNT
X2SON
DQN
4
250
184.0
184.0
19.0
TLV733285PDBVR
SOT-23
DBV
5
3000
180.0
180.0
18.0
TLV733285PDBVT
SOT-23
DBV
5
250
180.0
180.0
18.0
TLV733285PDQNR
X2SON
DQN
4
3000
184.0
184.0
19.0
TLV733285PDQNT
X2SON
DQN
4
250
184.0
184.0
19.0
TLV73328PDBVR
SOT-23
DBV
5
3000
180.0
180.0
18.0
TLV73328PDBVT
SOT-23
DBV
5
250
180.0
180.0
18.0
TLV73328PDQNR
X2SON
DQN
4
3000
184.0
184.0
19.0
TLV73328PDQNR3
X2SON
DQN
4
3000
184.0
184.0
19.0
TLV73328PDQNT
X2SON
DQN
4
250
184.0
184.0
19.0
TLV73330PDBVR
SOT-23
DBV
5
3000
180.0
180.0
18.0
TLV73330PDBVT
SOT-23
DBV
5
250
180.0
180.0
18.0
TLV73330PDQNR
X2SON
DQN
4
3000
184.0
184.0
19.0
TLV73330PDQNT
X2SON
DQN
4
250
184.0
184.0
19.0
TLV73333PDBVR
SOT-23
DBV
5
3000
180.0
180.0
18.0
TLV73333PDBVT
SOT-23
DBV
5
250
180.0
180.0
18.0
TLV73333PDQNR
X2SON
DQN
4
3000
184.0
184.0
19.0
TLV73333PDQNT
X2SON
DQN
4
250
184.0
184.0
19.0
Pack Materials-Page 4
IMPORTANT NOTICE
重要声明
德州仪器 (TI) 公司有权按照最新发布的 JESD46 对其半导体产品和服务进行纠正、增强、改进和其他修改，并不再按最新发布的 JESD48 提
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