TLV8812DGKT

Product Folder Sample & Buy Support & Community Tools & Software Technical Documents TLV8811, TLV8812 SNOSD35A – OCTOBER 2016 – REVISED NOVEMBER 2016 TLV8811,TLV8812 425 nA Precision Nanopower Op Amps for Cost-Optimized Systems 1 Features 3 Description • • • • • • • • • • • • • The TLV8811 (single) and TLV8812 (dual) family of precision ultra-low-power operational amplifiers are ideal for cost-optimized, “Always ON” sensing applications in battery powered wireless and low power wired equipment. With 6 kHz of bandwidth from 425 nA of quiescent current and a trimmed offset voltage to under 500µV, the TLV881x amplifiers provide high precision while minimizing power consumption in equipment such as CO gas detectors and portable electronic devices where operational battery-life is critical. They also have a CMOS input stage enabling fempto-amp bias currents, thereby reducing IBIAS and IOS errors that would otherwise impact high source impedance sensing applications. Additionally, built-in EMI protection reduces sensitivity to unwanted RF signals from mobile phones, WiFi, radio transmitters, and tag readers. 1 For Cost-Optimized Systems Nanopower Supply Current: 425 nA/channel Offset Voltage: 500 µV (max) TcVos: 1 µV/°C Gain-Bandwidth: 6 kHz Unity-Gain Stable Low Input Bias Current : 100 fA Wide Supply Range: 1.7 V to 5.5 V Rail-to-Rail Output No Output Reversals EMI Protection Temperature Range: –40°C to 125°C Industry Standard Packages: – Single in 5-pin SOT-23 – Dual in 8-pin VSSOP 2 Applications • • • • • • • • Gas Detectors (CO and O2) PIR Motion Detectors Current Sensing Thermostats IoT (Internet of Things) Remote Sensors Active RFID Readers and Tags Portable Medical Equipment Portable Glucose Monitors The TLV8811 (single) and TLV8812 (dual) channel versions are available in industry standard 5-pin SOT23 and 8-pin VSSOP packages respectively. Device Information (1) PART NUMBER BODY SIZE TLV8811 SOT-23 (5) 2.90 mm x 1.60 mm TLV8812 VSSOP (8) 3.00 mm × 3.00 mm LPV81x and TLV881x Nanopower Amplifiers CHANNELS SUPPLY CURRENT (Typ per Channel) OFFSET VOLTAGE (Max at 25°C) LPV811 1 450 nA 370 µV PART NUMBER (1) Nanopower Oxygen Sensor PACKAGE LPV812 2 425 nA 300 µV TLV8811 1 450 nA 550 µV TLV8812 2 425 nA 500 µV For all available packages, see the orderable addendum at the end of the data sheet. Nanopower CO Sensor 22 M 1M + V V 220 k + RL + VOUT CO Sensor + VOUT RL OXYGEN SENSOR 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. TLV8811, TLV8812 SNOSD35A – OCTOBER 2016 – REVISED NOVEMBER 2016 www.ti.com Table of Contents 1 2 3 4 5 6 7 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Pin Configuration and Functions ......................... Specifications......................................................... 1 1 1 2 3 4 6.1 6.2 6.3 6.4 6.5 6.6 4 4 4 4 5 6 Detailed Description ............................................ 12 7.1 7.2 7.3 7.4 8 Absolute Maximum Ratings ...................................... ESD Ratings.............................................................. Recommended Operating Conditions....................... Thermal Information .................................................. Electrical Characteristics........................................... Typical Characteristics .............................................. Overview ................................................................. Functional Block Diagram ....................................... Feature Description................................................. Device Functional Modes........................................ 12 12 12 12 Application and Implementation ........................ 14 8.1 Application Information............................................ 14 8.2 Typical Application: Three Terminal CO Gas Sensor Amplifier ................................................................... 14 8.3 Do's and Don'ts ...................................................... 17 9 Power Supply Recommendations...................... 17 10 Layout................................................................... 17 10.1 Layout Guidelines ................................................. 17 10.2 Layout Example .................................................... 17 11 Device and Documentation Support ................. 18 11.1 11.2 11.3 11.4 11.5 11.6 11.7 11.8 Device Support .................................................... Documentation Support ....................................... Related Links ........................................................ Receiving Notification of Documentation Updates Community Resources.......................................... Trademarks ........................................................... Electrostatic Discharge Caution ............................ Glossary ................................................................ 18 18 18 18 18 18 19 19 12 Mechanical, Packaging, and Orderable Information ........................................................... 19 4 Revision History Changes from Original (October 2016) to Revision A Page • Changed Description text ...................................................................................................................................................... 1 • Deleted large family table, moved to front page. ................................................................................................................... 1 • Added Family table to front page .......................................................................................................................................... 1 • Deleted "LPV8811 specs prelim until release" table footnote ............................................................................................... 5 • Added seporate CMRR Spec row for TLV8811 .................................................................................................................... 5 2 Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated TLV8811, TLV8812 www.ti.com SNOSD35A – OCTOBER 2016 – REVISED NOVEMBER 2016 5 Pin Configuration and Functions TLV8812 8-Pin VSSOP DGK Package Top View TLV8811 5-Pin SOT-23 DBV Package Top View OUT A OUT 1 V- 2 +IN 3 5 1 8 V+ 7 OUT B A V+ -IN A 2 B 4 +IN A 3 6 -IN B V- 4 5 +IN B -IN Pin Functions: TLV8811 DBV PIN TYPE DESCRIPTION NAME NUMBER OUT 1 O Output -IN 4 I Inverting Input +IN 3 I Non-Inverting Input V- 2 P Negative (lowest) power supply V+ 5 P Positive (highest) power supply Pin Functions: TLV8812 DGK PIN TYPE DESCRIPTION NAME NUMBER OUT A 1 O Channel A Output -IN A 2 I Channel A Inverting Input +IN A 3 I Channel A Non-Inverting Input V- 4 P Negative (lowest) power supply +IN B 5 I Channel B Non-Inverting Input -IN B 6 I Channel B Inverting Input OUT B 7 O Channel B Output V+ 8 P Positive (highest) power supply Copyright © 2016, Texas Instruments Incorporated Submit Documentation Feedback 3 TLV8811, TLV8812 SNOSD35A – OCTOBER 2016 – REVISED NOVEMBER 2016 www.ti.com 6 Specifications 6.1 Absolute Maximum Ratings Over operating free-air temperature range (unless otherwise noted) (1) MIN MAX UNIT –0.3 6 V Common mode (V-) - 0.3 (V+) + 0.3 V Differential (V-) - 0.3 (V+) + 0.3 V -10 10 mA Continuous Continuous –65 150 °C 150 °C Supply voltage, Vs = (V+) - (V-) Voltage Input pins Input pins (2) (3) Current Output short current (4) Storage temperature, Tstg Junction temperature (1) (2) (3) (4) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. Not to exceed -0.3V or +6.0V on ANY pin, referred to VInput terminals are diode-clamped to the power-supply rails. Input signals that can swing more than 0.3 V beyond the supply rails should be current-limited to 10 mA or less. Short-circuit to Vs/2, one amplifier per package. Continuous short circuit operation at elevated ambient temperature can result in exceeding the maximum allowed junction temperature of 150°C. 6.2 ESD Ratings VALUE Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 V(ESD) (1) (2) Electrostatic discharge (1) UNIT ±1000 Charged-device model (CDM), per JEDEC specification JESD22C101 (2) ±250 V JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Manufacturing with less than 500-V HBM is possible with the necessary precautions. Pins listed as ±2000 V may actually have higher performance. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Manufacturing with less than 250-V CDM is possible with the necessary precautions. Pins listed as ±750 V may actually have higher performance. 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN MAX Supply voltage (V+ – V–) 1.7 5.5 UNIT V Specified temperature -40 125 °C 6.4 Thermal Information THERMAL METRIC (1) TLV8811 DBV (SOT-23) 5 PINS TLV8812 DGK (VSSOP) 8 PINS θJA Junction-to-ambient thermal resistance 177.4 177.6 θJCtop Junction-to-case (top) thermal resistance 133.9 68.8 θJB Junction-to-board thermal resistance 36.3 98.2 ψJT Junction-to-top characterization parameter 23.6 12.3 ψJB Junction-to-board characterization parameter 35.7 96.7 (1) 4 UNIT ºC/W For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated TLV8811, TLV8812 www.ti.com SNOSD35A – OCTOBER 2016 – REVISED NOVEMBER 2016 6.5 Electrical Characteristics TA = 25°C, VS = 1.8 V to 5 V, VCM = VOUT = VS/2, and RL≥ 10 MΩ to VS / 2, unless otherwise noted . PARAMETER TEST CONDITIONS MIN TYP MAX UNIT OFFSET VOLTAGE Input offset voltage, TLV8811 VS = 1.8V and 3.3V, VCM = V- ±75 ±550 µV Input offset voltage, TLV8812 VS = 1.8V and 3.3V, VCM = V- ±55 ±500 µV ΔVOS/ΔT Input offset drift VCM = V- PSRR Power-supply rejection ratio VS = 1.8V to 3.3V, VCM = V- VOS TA = –40°C to 125°C ±1 ±1.6 µV/°C ±60 µV/V 2.4 V INPUT VOLTAGE RANGE VCM CMRR Common-mode voltage range VS = 3.3V Common-mode rejection ratio, TLV8811 (V–) ≤ VCM ≤ (V+) – 0.9 V, VS = 3.3V 77 95 dB Common-mode rejection ratio, TLV8812 (V–) ≤ VCM ≤ (V+) – 0.9 V, VS = 3.3V 80 98 dB 0 INPUT BIAS CURRENT IB Input bias current VS = 1.8V ±100 fA IOS Input offset current VS = 1.8V ±100 fA Differential 7 pF Common mode 3 pF 8 µVp-p INPUT IMPEDANCE NOISE En Input voltage noise ƒ = 0.1 Hz to 10 Hz en Input voltage noise density ƒ = 100 Hz 360 ƒ = 1 kHz 450 Open-loop voltage gain (V–) + 0.3 V ≤ VO ≤ (V+) – 0.3 V, RL = 100 kΩ 120 VOH Voltage output swing from positive rail VS = 1.8V, RL = 100 kΩ to V+/2 VOL Voltage output swing from negative rail VS = 1.8V, RL = 100 kΩ to V+/2 2.5 ISC Short-circuit current VS = 3.3V, Short to VS/2 4.7 mA ZO Open loop output impedance ƒ = 1 KHz, IO = 0 A 90 kΩ 6 kHz nV/√Hz OPEN-LOOP GAIN AOL dB OUTPUT 10 3.5 mV 10 FREQUENCY RESPONSE GBP SR Gain-bandwidth product CL = 20 pF, RL = 10 MΩ, VS = 5V G = 1, Rising Edge, CL = 20 pF, VS = 5V 1.4 G = 1, Falling Edge, CL = 20 pF, VS = 5V 1.5 Quiescent Current, TLV8811 VCM = V-, IO = 0, VS = 3.3V 450 750 Quiescent Current, Per Channel, TLV8812 VCM = V-, IO = 0, VS = 3.3V 425 700 Slew rate (10% to 90%) V/ms POWER SUPPLY IQ nA Copyright © 2016, Texas Instruments Incorporated Submit Documentation Feedback 5 TLV8811, TLV8812 SNOSD35A – OCTOBER 2016 – REVISED NOVEMBER 2016 www.ti.com 6.6 Typical Characteristics at TA = 25°C, RL = 10MΩ to VS/2 ,CL = 20pF, VCM = VS / 2V unless otherwise specified. 1000 900 900 Supply Current per Channel (nA) 1000 Supply Current (nA) 800 700 +125°C 600 +25°C 500 400 -40°C 300 200 100 1.5 2 2.5 3 3.5 4 4.5 5 Supply Voltage (V) VCM = V- 600 +125°C 500 +25°C 400 300 -40°C 200 100 1.5 5.5 2 2.5 TLV8811 3 3.5 4 4.5 5 Supply Voltage (V) C001 RL=No Load VCM = V- 5.5 C001 TLV8812 RL=No Load Figure 1. Supply Current vs. Supply Voltage, TLV8811 Figure 2. Supply Current vs. Supply Voltage, TLV8812 500 500 +125°C 400 +25°C 300 Offset Voltage (µV) -40°C 200 +125°C 400 +25°C 300 Offset Voltage (µV) 700 0 0 100 0 ±100 ±200 -40°C 200 100 0 ±100 ±200 ±300 ±300 ±400 ±400 ±500 ±500 0 0.15 0.3 0.45 0.6 0.75 0 0.9 Common Mode Voltage (V) RL= 10MΩ 1.6 2 2.4 C003 RL= 10MΩ Figure 4. Typical Offset Voltage vs. Common Mode Voltage 1k +125°C +25°C Input Bias Current (pA) 100 -40°C 200 1.2 VS= 3.3V 500 300 0.8 Common Mode Voltage (V) Figure 3. Typical Offset Voltage vs. Common Mode Voltage 400 0.4 C003 VS= 1.8V Offset Voltage (µV) 800 100 0 ±100 ±200 ±300 10 1 100m 10m ±400 ±500 1m 0 0.5 1 1.5 2 2.5 3 Common Mode Voltage (V) VS= 5V 3.5 4 4.5 RL= 10MΩ Figure 5. Typical Offset Voltage vs. Common Mode Voltage 6 Submit Documentation Feedback ±50 ±25 0 25 50 75 100 Temperature (ƒC) C003 VS= 5V TA = -40 to 125 125 C001 VCM = Vs/2 Figure 6. Input Bias Current vs. Temperature Copyright © 2016, Texas Instruments Incorporated TLV8811, TLV8812 www.ti.com SNOSD35A – OCTOBER 2016 – REVISED NOVEMBER 2016 Typical Characteristics (continued) 100 100 80 80 60 60 Input Bias Current (fA) Input Bias Current (fA) at TA = 25°C, RL = 10MΩ to VS/2 ,CL = 20pF, VCM = VS / 2V unless otherwise specified. 40 20 0 ±20 ±40 ±60 0 ±20 ±40 ±60 ±80 ±100 ±100 0.2 0.3 0.5 0.6 0.8 Common Mode Voltage (V) VS= 1.8V 0.9 0.0 0.5 1.0 1.5 TA = -40°C VS= 5V 800 800 600 600 Input Bias Current (fA) 1000 200 0 ±200 ±400 3.0 3.5 4.0 4.5 C002 TA = -40°C 400 200 0 ±200 ±400 ±600 ±600 ±800 ±800 ±1000 2.5 Figure 8. Input Bias Current vs. Common Mode Voltage 1000 400 2.0 Common Mode Voltage (V) C001 Figure 7. Input Bias Current vs. Common Mode Voltage Input Bias Current (fA) 20 ±80 0.0 ±1000 0.0 0.2 0.3 0.5 0.6 0.8 Common Mode Voltage (V) VS= 1.8V 0.9 0.0 0.5 1.0 1.5 TA = 25°C VS= 5V 400 300 300 Input Bias Current (pA) 500 400 100 0 ±100 ±200 3.0 3.5 4.0 4.5 C005 TA = 25°C 200 100 0 ±100 ±200 ±300 ±300 ±400 ±400 ±500 2.5 Figure 10. Input Bias Current vs. Common Mode Voltage 500 200 2.0 Common Mode Voltage (V) C004 Figure 9. Input Bias Current vs. Common Mode Voltage Input Bias Current (pA) 40 ±500 0.0 0.2 0.3 0.5 0.6 Common Mode Voltage (V) VS= 1.8V 0.8 0.9 TA = 125°C Figure 11. Input Bias Current vs. Common Mode Voltage Copyright © 2016, Texas Instruments Incorporated 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Common Mode Voltage (V) C003 VS= 5V 4.5 C006 TA = 125°C Figure 12. Input Bias Current vs. Common Mode Voltage Submit Documentation Feedback 7 TLV8811, TLV8812 SNOSD35A – OCTOBER 2016 – REVISED NOVEMBER 2016 www.ti.com Typical Characteristics (continued) at TA = 25°C, RL = 10MΩ to VS/2 ,CL = 20pF, VCM = VS / 2V unless otherwise specified. 10 +125°C +25°C -40°C 1 100m 10m 1m 1m Output Sourcing Current (A) VS= 1.8V 1m VS= 3.3V 1m Figure 14. Output Swing vs. Sinking Current, 1.8V 100m 10m 1m 1m 1m +125°C +25°C -40°C 1 100m 10m 1m 10m 1m RL= No Load 10m Output Sinking Current (A) C001 Figure 17. Output Swing vs. Sourcing Current, 5V Submit Documentation Feedback RL= No Load Figure 16. Output Swing vs. Sinking Current, 3.3V Output Swing from V- (V) 1m C005 VS= 3.3V 10 10m 10m Output Sinking Current (A) C001 100m VS= 5V +125°C +25°C -40°C 1 RL= No Load Output Sourcing Current (A) RL= No Load 10m +125°C +25°C -40°C 10m C006 VS= 1.8V Figure 15. Output Swing vs. Sourcing Current, 3.3V Output Swing from V+ (V) 1m Output Sinking Current (A) Output Swing from V- (V) Output Swing from V+ (V) 1m Output Sourcing Current (A) 8 10m 10 10m 1 100m RL= No Load 100m 10 -40°C C003 +125°C +25°C -40°C 1 1 10m Figure 13. Output Swing vs. Sourcing Current, 1.8V 10 +125°C +25°C Output Swing from V- (V) Output Swing from V+ (V) 10 VS= 5V C004 RL= No Load Figure 18. Output Swing vs. Sinking Current, 5V Copyright © 2016, Texas Instruments Incorporated TLV8811, TLV8812 www.ti.com SNOSD35A – OCTOBER 2016 – REVISED NOVEMBER 2016 Typical Characteristics (continued) 50 mV/div 50 mV/div at TA = 25°C, RL = 10MΩ to VS/2 ,CL = 20pF, VCM = VS / 2V unless otherwise specified. 500 us/div 500 us/div C002 TA = 25 VS= ±0.9V RL= 10MΩ CL= 20pF C002 Vout = 200mVpp AV = +1 TA = 25 VS= ±2.5V Vout = 200mVpp AV = +1 500 mV/div Figure 20. Small Signal Pulse Response, 5V 200 mV/div Figure 19. Small Signal Pulse Response, 1.8V RL= 10MΩ CL= 20pF 500 us/div 500 us/div C002 TA = 25 VS= ±0.9V RL= 10MΩ CL= 20pF C002 Vout = 1Vpp AV = +1 TA = 25 VS= ±2.5V Figure 21. Large Signal Pulse Response, 1.8V RL= 10MΩ CL= 20pF Vout = 2Vpp AV = +1 Figure 22. Large Signal Pulse Response, 5V 110 140 +PSRR 100 120 80 PSRR (dB) 100 CMRR (dB) -PSRR 90 80 60 40 70 60 50 40 30 20 20 10 0 0 1 10 100 1k 10k Frequency (Hz) TA = 25 VS= 5V VCM = Vs/2 RL= 10MΩ CL= 20p AV = +1 ΔVCM = 0.5Vpp Figure 23. CMRR vs Frequency Copyright © 2016, Texas Instruments Incorporated 10 100 1k 10k Frequency (Hz) C001 TA = 25 VS= 3.3V VCM = Vs/2 RL= 10MΩ CL= 20p AV = +1 C001 ΔVS = 0.5Vpp Figure 24. ±PSRR vs Frequency Submit Documentation Feedback 9 TLV8811, TLV8812 SNOSD35A – OCTOBER 2016 – REVISED NOVEMBER 2016 www.ti.com Typical Characteristics (continued) at TA = 25°C, RL = 10MΩ to VS/2 ,CL = 20pF, VCM = VS / 2V unless otherwise specified. 140 135 120 100 113 100 113 80 90 80 90 60 68 PHASE 20 23 20 23 0 0 0 0 1m 10m 100m 1 -23 100k 10 100 1k 10k Frequency (Hz) TA = -40, 25, 125°C VS= 5V 45 -23 100k ±20 1m 10m 100m VOUT = 200mVPP VCM = Vs/2 1 10 100 1k 10k Frequency (Hz) C001 RL= 10MΩ CL= 20pF TA = -40, 25, 125°C VS= 3.3V Figure 25. Open Loop Gain and Phase, 5V, 10 MΩ Load C002 RL= 10MΩ CL= 20pF VOUT = 200mVPP VCM = Vs/2 Figure 26. Open Loop Gain and Phase, 3.3V, 10 MΩ Load 160 158 140 135 120 100 113 100 113 80 90 80 90 60 68 140 125°C 25°C -40°C GAIN 120 PHASE 40 AOL (dB) 180 Phase (ƒ) 160 AOL (dB) 68 60 40 ±20 180 125°C 25°C -40°C GAIN 158 135 60 68 PHASE 45 40 20 23 20 23 0 0 0 0 ±20 1m 10m 100m 1 10 100 1k 10k -23 100k Frequency (Hz) TA = -40, 25, 125°C VS= 5V 1m 10m 100m VOUT = 200mVPP VCM = Vs/2 1 10 100 1k 10k -23 100k Frequency (Hz) C003 RL= 1MΩ CL= 20pF 45 ±20 TA = -40, 25, 125°C VS= 3.3V Figure 27. Open Loop Gain and Phase, 5V, 1 MΩ Load C002 RL= 1MΩ CL= 20pF VOUT = 200mVPP VCM = Vs/2 Figure 28. Open Loop Gain and Phase, 3.3V, 1 MΩ Load 140 135 120 100 113 100 113 80 90 80 90 60 68 125°C 25°C -40°C GAIN 120 PHASE AOL (dB) 160 158 140 Phase (ƒ) 180 160 AOL (dB) 135 45 40 125°C 25°C -40°C GAIN 180 158 135 68 60 PHASE 45 40 20 23 20 23 0 0 0 0 40 ±20 1m 10m 100m 1 10 100 Frequency (Hz) TA = -40, 25, 125°C VS= 5V RL= 100kΩ CL= 20pF 1k 10k -23 100k Submit Documentation Feedback 45 ±20 1m 10m 100m 1 10 100 Frequency (Hz) C001 VOUT = 200mVPP VCM = Vs/2 Figure 29. Open Loop Gain and Phase, 5V, 100kΩ Load 10 158 Phase (ƒ) AOL (dB) PHASE GAIN 180 Phase (ƒ) GAIN 120 125°C 25°C -40°C TA = -40, 25, 125°C VS= 3.3V Phase (ƒ) 125°C 25°C -40°C AOL (dB) 160 158 140 Phase (ƒ) 180 160 RL= 100kΩ CL= 20pF 1k 10k -23 100k C002 VOUT = 200mVPP VCM = Vs/2 Figure 30. Open Loop Gain and Phase, 3.3V, 100kΩ Load Copyright © 2016, Texas Instruments Incorporated TLV8811, TLV8812 www.ti.com SNOSD35A – OCTOBER 2016 – REVISED NOVEMBER 2016 Typical Characteristics (continued) at TA = 25°C, RL = 10MΩ to VS/2 ,CL = 20pF, VCM = VS / 2V unless otherwise specified. 125°C 25°C -40°C GAIN AOL (dB) 120 158 135 100 113 80 90 68 60 PHASE 40 23 0 0 100m 10k 1 10 100 1k 10k Frequency (Hz) TA = -40, 25, 125°C VS= 1.8V 1k -23 100k ±20 10m 100k 45 20 1m 1M 180 ZO (Ÿ 140 Phase (ƒ) 160 100 100m C003 RL= 10MΩ CL= 20pF AOL (dB) 113 80 90 60 68 PHASE 45 20 23 0 0 ±20 1m 10m 100m 1 10 100 1k 10k C001 VS= 5 V RL= 10MΩ 100 10 100m C003 RL= 1MΩ CL= 20pF 100k 1000 -23 100k Frequency (Hz) TA = -40, 25, 125°C VS= 1.8V 10k 10000 135 100 40 1k 158 9ROWDJH 1RLVH Q9¥5W+] GAIN 120 100 Figure 32. Open Loop Output Impedance 180 125°C 25°C -40°C Phase (ƒ) 140 10 TA = 25°C Figure 31. Open Loop Gain and Phase, 1.8V, 10 MΩ Load 160 1 Frequency (Hz) VOUT = 200mVPP VCM = Vs/2 1 10 100 1k 10k Frequency (Hz) VOUT = 200mVPP VCM = Vs/2 TA = 25 VS= 5V RL= 1MΩ CL= 20pF C001 VCM = Vs/2 AV = +1 Figure 33. Open Loop Gain and Phase, 1.8V, 1 MΩ Load Figure 34. Input Voltage Noise vs Frequency 125°C 25°C -40°C GAIN AOL (dB) 120 113 80 90 68 PHASE 40 45 20 23 0 0 ±20 1m 10m 100m 1 10 100 Frequency (Hz) TA = -40, 25, 125°C VS= 1.8V 100 135 100 60 RL= 100kΩ CL= 20pF 1k 10k TLV8812, -20dBm TLV8812, -10dBm TLV8812, 0dBm 158 EMIRR (dB) 140 120 180 Phase (ƒ) 160 80 60 40 20 -23 100k 0 C003 VOUT = 200mVPP VCM = Vs/2 10 100 1000 Frequency (MHz) TA = 25 VS= 3.3V RL= 1MΩ CL= 20pF C001 VCM = Vs/2 AV = +1 Figure 35. Open Loop Gain and Phase, 1.8V, 100kΩ Load Figure 36. EMIRR Performance Copyright © 2016, Texas Instruments Incorporated Submit Documentation Feedback 11 TLV8811, TLV8812 SNOSD35A – OCTOBER 2016 – REVISED NOVEMBER 2016 www.ti.com 7 Detailed Description 7.1 Overview The TLV8811 (single) and TLV8812 (dual) series of nanoPower CMOS operational amplifiers are designed for long-life battery-powered and energy harvested applications. They operate on a single supply with operation as low as 1.7V. The Input Offset is trimmed to less than 500uV and the output is rail-to-rail and swings to within 3.5mV of the supplies with a 100kΩ load. The common-mode range extends to the negative supply making it ideal for single-supply applications. EMI protection has been employed internally to reduce the effects of EMI. Parameters that vary significantly with operating voltages or temperature are shown in the Typical Characteristics curves. 7.2 Functional Block Diagram V IN – IN + + _ OUT + V – Copyright © 2016, Texas Instruments Incorporated 7.3 Feature Description The amplifier's differential inputs consist of a non-inverting input (+IN) and an inverting input (–IN). The amplifier amplifies only the difference in voltage between the two inputs, which is called the differential input voltage. The output voltage of the op-amp VOUT is given by Equation 1: VOUT = AOL (IN+ – IN–) where • AOL is the open-loop gain of the amplifier, typically around 120 dB (1,000,000x, or 1,000,000 Volts per microvolt). (1) 7.4 Device Functional Modes 7.4.1 Negative-Rail Sensing Input The input common-mode voltage range of the TLV881x extends from (V-) to (V+) – 0.9 V. In this range, low offset can be expected with a minimum of 80dB CMRR. The TLV881x is protected from output "inversions" or "reversals". 7.4.2 Rail to Rail Output Stage The TLV881x output voltage swings 3.5 mV from rails at 1.8 V supply, which provides the maximum possible dynamic range at the output. This is particularly important when operating on low supply voltages. The TLV881x Maximum Output Voltage Swing graph defines the maximum swing possible under a particular output load. 7.4.3 Design Optimization for Nanopower Operation When designing for ultralow power, choose system feedback components carefully. To minimize quiescent current consumption, select large-value feedback resistors. Any large resistors will react with stray capacitance in the circuit and the input capacitance of the operational amplifier. These parasitic RC combinations can affect the stability of the overall system. A feedback capacitor may be required to assure stability and limit overshoot or gain peaking. When possible, use AC coupling and AC feedback to reduce static current draw through the feedback elements. Use film or ceramic capacitors since large electrolytics may have large static leakage currents in the nanoamps. 12 Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated TLV8811, TLV8812 www.ti.com SNOSD35A – OCTOBER 2016 – REVISED NOVEMBER 2016 Device Functional Modes (continued) 7.4.4 Driving Capacitive Load The TLV881x is internally compensated for stable unity gain operation, with a 6 kHz typical gain bandwidth. However, the unity gain follower is the most sensitive configuration to capacitive load. The combination of a capacitive load placed directly on the output of an amplifier along with the amplifier’s output impedance creates a phase lag, which reduces the phase margin of the amplifier. If the phase margin is significantly reduced, the response will be under damped which causes peaking in the transfer and, when there is too much peaking, the op amp might start oscillating. In order to drive heavy (>50pF) capacitive loads, an isolation resistor, RISO, should be used, as shown in Figure 37. By using this isolation resistor, the capacitive load is isolated from the amplifier’s output. The larger the value of RISO, the more stable the amplifier will be. If the value of RISO is sufficiently large, the feedback loop will be stable, independent of the value of CL. However, larger values of RISO result in reduced output swing and reduced output current drive. The recommended value for RISO is 30-50kΩ. - RISO VOUT VIN + CL Figure 37. Resistive Isolation Of Capacitive Load Copyright © 2016, Texas Instruments Incorporated Submit Documentation Feedback 13 TLV8811, TLV8812 SNOSD35A – OCTOBER 2016 – REVISED NOVEMBER 2016 www.ti.com 8 Application and Implementation NOTE Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality. 8.1 Application Information The TLV881x is a ultra-low power operational amplifier that provides 6 kHz bandwidth with only 450nA typical quiescent current, trimmed input offset voltage and precision drift specifications. These rail-to-rail output amplifiers are specifically designed for battery-powered applications. The input common-mode voltage range extends to the negative supply rail and the output swings to within millivolts of the rails, maintaining a wide dynamic range. 8.2 Typical Application: Three Terminal CO Gas Sensor Amplifier R1 10 k C1 0.1µF Potentiostat (Bias Loop) CE RE CO Sensor R2 10 NŸ 2.5V U1 + VREF WE Transimpedance Amplifier (I to V conversion) ISENS RF Riso 49.9 k RL VREF + U2 VTIA C2 1µF Figure 38. Three Terminal Gas Sensor Amplifier Schematic 8.2.1 Design Requirements Figure 38 shows a simple micropower potentiostat circuit for use with three terminal unbiased CO sensors, though it is applicable to many other type of three terminal gas sensors or electrochemical cells. The basic sensor has three electrodes; The Sense or Working Electrode (“WE”), Counter Electrode (“CE”) and Reference Electrode (“RE”). A current flows between the CE and WE proportional to the detected concentration. The RE monitors the potential of the internal reference point. For an unbiased sensor, the WE and RE electrodes must be maintained at the same potential by adjusting the bias on CE. Through the Potentiostat circuit formed by U1, the servo feedback action will maintain the RE pin at a potential set by VREF. R1 is to maintain stability due to the large capacitance of the sensor. C1 and R2 form the Potentiostat integrator and set the feedback time constant. U2 forms a transimpedance amplifier ("TIA") to convert the resulting sensor current into a proportional voltage. The transimpedance gain, and resulting sensitivity, is set by RF according to Equation 2. VTIA = (-I * RF) + VREF (2) RL is a load resistor of which the value is normally specified by the sensor manufacturer (typically 10 ohms). The potential at WE is set by the applied VREF. Riso provides capacitive isolation and, combined with C2, form the output filter and ADC reservoir capacitor to drive the ADC. 14 Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated TLV8811, TLV8812 www.ti.com SNOSD35A – OCTOBER 2016 – REVISED NOVEMBER 2016 Typical Application: Three Terminal CO Gas Sensor Amplifier (continued) 8.2.2 Detailed Design Procedure For this example, we will be using a CO sensor with a sensitivity of 69nA/ppm. The supply voltage and maximum ADC input voltage is 2.5V, and the maximum concentration is 300ppm. First the VREF voltage must be determined. This voltage is a compromise between maximum headroom and resolution, as well as allowance for "footroom" for the minimum swing on the CE terminal, since the CE terminal generally goes negative in relation to the RE potential as the concentration (sensor current) increases. Bench measurements found the difference between CE and RE to be 180mV at 300ppm for this particular sensor. To allow for negative CE swing "footroom" and voltage drop across the 10k resistor, 300mV was chosen for VREF. Therefore +300mV will be used as the minimum VZERO to add some headroom. VZERO = VREF = +300mV where • • VZERO is the zero concentration voltage VREF is the reference voltage (300mV) (3) Next we calculate the maximum sensor current at highest expected concentration: ISENSMAX = IPERPPM * ppmMAX = 69nA * 300ppm = 20.7uA where • • • ISENSMAX is the maximum expected sensor current IPERPPM is the manufacturer specified sensor current in Amps per ppm ppmMAX is the maximum required ppm reading (4) Now find the available output swing range above the reference voltage available for the measurement: VSWING = VOUTMAX – VZERO = 2.5V – 0.3V = 2.2V where • • VSWING is the expected change in output voltage VOUTMAX is the maximum amplifier output swing (usually near V+) (5) Now we calculate the transimpedance resistor ®F) value using the maximum swing and the maximum sensor current: RF = VSWING / ISENSMAX = 2.2V / 20.7µA = 106.28 kΩ (we will use 110 kΩ for a common value) Copyright © 2016, Texas Instruments Incorporated Submit Documentation Feedback (6) 15 TLV8811, TLV8812 SNOSD35A – OCTOBER 2016 – REVISED NOVEMBER 2016 www.ti.com Typical Application: Three Terminal CO Gas Sensor Amplifier (continued) 8.2.3 Application Curve 2.50 Vc Vw 2.25 Vtia 2.00 Vdif Measured Voltage (V) 1.75 1.50 1.25 1.00 0.75 0.50 0.25 0.00 0 15 30 45 60 75 90 105 120 135 150 Time (sec) C007 Figure 39. Monitored Voltages when Exposed to 200ppm CO Figure 39 shows the resulting circuit voltages when the sensor was exposed to 200ppm step of carbon monoxide gas. VC is the monitored CE pin voltage and clearly shows the expected CE voltage dropping below the WE voltage, VW, as the concentration increases. VTIA is the output of the transimpedance amplifier U2. VDIFF is the calculated difference between VREF and VTIA, which will be used for the ppm calculation. 20 300 18 250 Concentration (ppm) Sensor Current (uA) 16 14 12 10 8 6 4 200 150 100 50 2 0 0 0 15 30 45 60 75 90 105 120 135 150 Time (sec) 0 15 30 45 Figure 40. Calculated Sensor Current 60 75 90 105 120 135 150 Time (sec) C002 C003 Figure 41. Calculated ppm Figure 40 shows the calculated sensor current using the formula in Equation 7 : ISENSOR = VDIFF / RF = 1.52V / 110 kΩ = 13.8uA (7) Equation 8 shows the resulting conversion of the sensor current into ppm. ppm = ISENSOR / IPERPPM = 13.8µA / 69nA = 200 (8) Total supply current for the amplifier section is less than 700 nA, minus sensor current. Note that the sensor current is sourced from the amplifier output, which in turn comes from the amplifier supply voltage. Therefore, any continuous sensor current must also be included in supply current budget calculations. 16 Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated TLV8811, TLV8812 www.ti.com SNOSD35A – OCTOBER 2016 – REVISED NOVEMBER 2016 8.3 Do's and Don'ts Do properly bypass the power supplies. Do add series resistance to the output when driving capacitive loads, particularly cables, Muxes and ADC inputs. Do add series current limiting resistors and external schottky clamp diodes if input voltage is expected to exceed the supplies. Limit the current to 1mA or less (1KΩ per volt). 9 Power Supply Recommendations The TLV881x is specified for operation from 1.7 V to 5.5 V (±0.85 V to ±2.75 V) over a –40°C to 125°C temperature range. Parameters that can exhibit significant variance with regard to operating voltage or temperature are presented in the Typical Characteristics. CAUTION Supply voltages larger than 6 V can permanently damage the device. For proper operation, the power supplies must be properly decoupled. For decoupling the supply lines it is suggested that 100 nF capacitors be placed as close as possible to the operational amplifier power supply pins. For single supply, place a capacitor between V+ and V– supply leads. For dual supplies, place one capacitor between V+ and ground, and one capacitor between V– and ground. Low bandwidth nanopower devices do not have good high frequency (> 1 kHz) AC PSRR rejection against highfrequency switching supplies and other 1 kHz and above noise sources, so extra supply filtering is recommended if kilohertz or above noise is expected on the power supply lines. 10 Layout 10.1 Layout Guidelines The V+ pin should be bypassed to ground with a low ESR capacitor. The optimum placement is closest to the V+ and ground pins. Care should be taken to minimize the loop area formed by the bypass capacitor connection between V+ and ground. The ground pin should be connected to the PCB ground plane at the pin of the device. The feedback components should be placed as close to the device as possible to minimize strays. 10.2 Layout Example Figure 42. SOT-23 Layout Example (Top View) Copyright © 2016, Texas Instruments Incorporated Submit Documentation Feedback 17 TLV8811, TLV8812 SNOSD35A – OCTOBER 2016 – REVISED NOVEMBER 2016 www.ti.com 11 Device and Documentation Support 11.1 Device Support 11.1.1 Development Support TINA-TI SPICE-Based Analog Simulation Program, http://www.ti.com/tool/tina-ti DIP Adapter Evaluation Module, http://www.ti.com/tool/dip-adapter-evm TI Universal Operational Amplifier Evaluation Module, http://www.ti.com/tool/opampevm TI FilterPro Filter Design Software, http://www.ti.com/tool/filterpro 11.2 Documentation Support 11.2.1 Related Documentation For related documentation, see the following: • AN-1798 Designing with Electro-Chemical Sensors, SNOA514 • AN-1803 Design Considerations for a Transimpedance Amplifier, SNOA515 • AN-1852 Designing With pH Electrodes, SNOA529 • Compensate Transimpedance Amplifiers Intuitively, SBOA055 • Transimpedance Considerations for High-Speed Operational Amplifiers, SBOA112 • Noise Analysis of FET Transimpedance Amplifiers, SBOA060 • Circuit Board Layout Techniques, SLOA089 • Handbook of Operational Amplifier Applications, SBOA092 11.3 Related Links The table below lists quick access links. Categories include technical documents, support and community resources, tools and software, and quick access to sample or buy. Table 1. Related Links PARTS PRODUCT FOLDER SAMPLE & BUY TECHNICAL DOCUMENTS TOOLS & SOFTWARE SUPPORT & COMMUNITY TLV8811 Click here Click here Click here Click here Click here TLV8812 Click here Click here Click here Click here Click here 11.4 Receiving Notification of Documentation Updates To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper right corner, click on Alert me to register and receive a weekly digest of any product information that has changed. For change details, review the revision history included in any revised document. 11.5 Community Resources The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers. Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support. 11.6 Trademarks E2E is a trademark of Texas Instruments. 18 Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated TLV8811, TLV8812 www.ti.com SNOSD35A – OCTOBER 2016 – REVISED NOVEMBER 2016 11.6 Trademarks (continued) All other trademarks are the property of their respective owners. 11.7 Electrostatic Discharge Caution These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 11.8 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. 12 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. Copyright © 2016, Texas Instruments Incorporated Submit Documentation Feedback 19 PACKAGE OPTION ADDENDUM www.ti.com 22-Sep-2022 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) Samples (4/5) (6) TLV8811DBVR ACTIVE SOT-23 DBV 5 3000 RoHS & Green SN Level-1-260C-UNLIM -40 to 125 16EM Samples TLV8811DBVT ACTIVE SOT-23 DBV 5 250 RoHS & Green SN Level-1-260C-UNLIM -40 to 125 16EM Samples TLV8812DGKR ACTIVE VSSOP DGK 8 2500 RoHS & Green NIPDAUAG | SN Level-1-260C-UNLIM -40 to 125 TLV 8812 Samples TLV8812DGKT ACTIVE VSSOP DGK 8 250 RoHS & Green NIPDAUAG | SN Level-1-260C-UNLIM -40 to 125 TLV 8812 Samples (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of