TMAG5115B1CQDBZR

TMAG5115 SBASAJ1A – DECEMBER 2022 – REVISED FEBRUARY 2023 TMAG5115 High-Speed, Low Jitter, Hall-Effect Latch 1 Features 3 Description • The TMAG5115 device is a high performance Halleffect latch sensor with fast propagation delay and low jitter. The device also has high sensitivity stability over temperature and offers integrated protection features designed for applications that require high RPM. The combination of low jitter and low propagation delay can help increase power efficiency and reduce parasitic system-level noise. • • • • • • • High-speed digital bipolar-latch Hall sensor – Low propagation delay: 5 µs – Low jitter: 5 µs – Bandwidth (BW): 60-kHz Supports a wide voltage range: – 2.5 V to 26 V – No external regulator required Fast power-on time: 62.5 µs High precision thresholds: – ±3 mT with ±1 mT maximum variation – ±1 mT with ±0.7 mT maximum variation Protection features: – Output short-circuit protection – Output current limitation – Overtemperature protection Open-drain output (15-mA sink) Wide operating temperature range: – –40°C to 125°C Small package and footprint: – Surface mount 3-pin SOT-23 • 2.92 mm × 1.30 mm The device has an open-drain output stage with 15-mA current sink capability. The TMAG5115 wide operating voltage range of 2.5 V to 26 V is designed for a wide range of industrial and commercial applications. Internal protection functions are provided for output short-circuit, overcurrent, and overtemperature conditions. The TMAG5115 is available in the industry standard SOT-23 package. Package Information(1) PART NUMBER TMAG5115 2 Applications • • • • • (1) Cordless power tools Vacuum robot Computer fan Valve and solenoid status Industrial brushless DC motors PACKAGE SOT-23 (3) BODY SIZE (NOM) 2.92 mm × 1.30 mm For all available packages, see the package option addendum at the end of the data sheet. TMAG5115 OUT Bhys 2.5 V to 26 V TMAG5115 VCC OUT GND BRP (North) BOF BOP (South) Output State B (mT) VCC Controller OUT GND VCC OUT GND Simplified Application An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. TMAG5115 www.ti.com SBASAJ1A – DECEMBER 2022 – REVISED FEBRUARY 2023 Table of Contents 1 Features............................................................................1 2 Applications..................................................................... 1 3 Description.......................................................................1 4 Revision History.............................................................. 2 5 Device Comparison......................................................... 3 6 Pin Configuration and Functions...................................3 7 Specifications.................................................................. 4 7.1 Absolute Maximum Ratings........................................ 4 7.2 ESD Ratings............................................................... 4 7.3 Recommended Operating Conditions.........................4 7.4 Thermal Information....................................................4 7.5 Electrical Characteristics.............................................5 7.6 Magnetic Characteristics.............................................5 7.7 Typical Characteristics................................................ 6 8 Detailed Description........................................................8 8.1 Overview..................................................................... 8 8.2 Functional Block Diagram........................................... 8 8.3 Feature Description.....................................................9 8.4 Device Functional Modes..........................................14 9 Application and Implementation.................................. 15 9.1 Application Information............................................. 15 9.2 Typical Applications.................................................. 15 9.3 Power Supply Recommendations.............................18 9.4 Layout....................................................................... 18 10 Device and Documentation Support..........................19 10.1 Device Support....................................................... 19 10.2 Receiving Notification of Documentation Updates..19 10.3 Support Resources................................................. 19 10.4 Trademarks............................................................. 19 10.5 Electrostatic Discharge Caution..............................19 10.6 Glossary..................................................................19 11 Mechanical, Packaging, and Orderable Information.................................................................... 19 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision * (December 2022) to Revision A (February 2023) Page • Added TMAG5115A threshold to Features section............................................................................................ 1 • Added Device Comparison table........................................................................................................................ 3 • Added TMAG5115A magnetic specifications......................................................................................................5 • Added typical characteristic curves for TMAG5115A..........................................................................................6 2 Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: TMAG5115 TMAG5115 www.ti.com SBASAJ1A – DECEMBER 2022 – REVISED FEBRUARY 2023 5 Device Comparison Table 5-1. Device Comparison TYPICAL THRESHOLD VERSION TYPICAL HYSTERESIS MAGNETIC RESPONSE OUTPUT TYPE SENSOR ORIENTATION BANDWIDTH PACKAGES AVAILABLE TMAG5115A1C 3 mT 6 mT Active Low Open-drain Z 60 kHz SOT-23 TMAG5115B1C 1.8 mT 0.6 mT Active Low Open-drain Z 60 kHz SOT-23 6 Pin Configuration and Functions For additional configuration information, see the Mechanical, Packaging, and Orderable Information section. VCC 1 3 OUT GND 2 Not to scale Figure 6-1. DBZ Package 3-Pin SOT-23 Top View Table 6-1. Pin Functions PIN NAME NO. TYPE DESCRIPTION GND 3 GND Ground pin OUT 2 O Hall sensor open-drain output. Requires a resistor pullup, typically 10 kΩ. VCC 1 P Supply pin. 2.5 V to 26 V. TI recommends to use a minimum 0.01-µF capacitor. Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: TMAG5115 3 TMAG5115 www.ti.com SBASAJ1A – DECEMBER 2022 – REVISED FEBRUARY 2023 7 Specifications 7.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted)(1) VCC Power supply voltage ISINK Output sink current Magnetic flux density, BMAX MIN MAX UNIT –0.3 30 V 30 mA Unlimited Unlimited T Junction temperature, TJ –65 150 °C Storage temperature, Tstg –65 150 °C (1) Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions. If used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime. 7.2 ESD Ratings VALUE V(ESD) (1) (2) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/ JEDEC JS-001(1) ±2000 Charged device model (CDM), ANSI/ESDA/ JEDEC JS-002(2) ±500 UNIT V JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 7.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN MAX 2.5 26 Output pin voltage 0 26 V Output pin current sink 0 15 mA –40 125 °C VCC Power supply voltage(1) VO ISINK TA Ambient temperature (1) UNIT V Operating outside the TMAG5115 Recommended Supply and Temperature Curve can cause the device to enter a thermal shutdown state. 7.4 Thermal Information TMAG5115 THERMAL METRIC(1) DBZ (SOT-23) UNIT 3 PINS RθJA Junction-to-ambient thermal resistance 208.2 °C/W RθJC(top) Junction-to-case (top) thermal resistance 102.3 °C/W RθJB Junction-to-board thermal resistance 40.6 °C/W ΨJT Junction-to-top characterization parameter 9.7 °C/W ΨJB Junction-to-board characterization parameter 40.2 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance – °C/W (1) 4 For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: TMAG5115 TMAG5115 www.ti.com SBASAJ1A – DECEMBER 2022 – REVISED FEBRUARY 2023 7.5 Electrical Characteristics over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX 6 8 UNIT POWER SUPPLY ICC Operating supply current tON Power-on time VCC = 2.5 V to 26 V TA = –40°C to 125°C 62.5 Power-on state VCC > VCCmin t 0 mT B < 0 mT N S S N N = North pole, S = South pole Figure 8-1. Field Direction Definition 8.3.2 Device Output If the device is powered on with a magnetic field strength between BRP and BOP, then the device output is indeterminate and can either be Hi-Z or low. If the field strength is greater than BOP, then the output is pulled low. If the field strength is less than BRP, then the output is released. OUT BRP (North) BOF BOP (South) B (mT) Figure 8-2. TMAG5115 BOP > 0 Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: TMAG5115 9 TMAG5115 www.ti.com SBASAJ1A – DECEMBER 2022 – REVISED FEBRUARY 2023 8.3.3 Power-On Time After applying VCC to the TMAG5115, ton must elapse before the OUT pin is valid. During the power-up sequence, the output is Hi-Z. A pulse as shown in Figure 8-3 and Figure 8-4 occurs at the end of ton. This pulse can allow the host processor to determine when the TMAG5115 output is valid after start-up. In Case 1 (Figure 8-3) and Case 2 (Figure 8-4), the output is defined assuming a constant magnetic field B > BOP and B < BRP. VCC t (s) B (mT) BOP BRP t (s) OUT Valid Output t (s) ton Figure 8-3. Case 1: Power On When B > BOP VCC t (s) B (mT) BOP BRP t (s) OUT Valid Output t (s) ton Figure 8-4. Case 2: Power On When B < BRP 10 Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: TMAG5115 TMAG5115 www.ti.com SBASAJ1A – DECEMBER 2022 – REVISED FEBRUARY 2023 If the device is powered on with the magnetic field strength BRP < B < BOP, then the device output is indeterminate and can either be Hi-Z or pulled low. During the power-up sequence, the output is held Hi-Z until ton has elapsed. At the end of ton, a pulse is given on the OUT pin to indicate that ton has elapsed. After ton, if the magnetic field changes such that BOP < B, the output is released. Case 3 (Figure 8-5) and Case 4 (Figure 8-6) show examples of this behavior. VCC t (s) B (mT) BOP BRP t (s) OUT Valid Output t (s) ton td Figure 8-5. Case 3: Power On When BRP < B < BOP, Followed by B > BOP VCC t (s) B (mT) BOP BRP t (s) OUT Valid Output t (s) ton td Figure 8-6. Case 4: Power On When BRP < B < BOP, Followed by B < BRP Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: TMAG5115 11 TMAG5115 www.ti.com SBASAJ1A – DECEMBER 2022 – REVISED FEBRUARY 2023 8.3.4 Output Stage Figure 8-7 shows the TMAG5115 open-drain NMOS output structure, rated to sink up to 15 mA of current. Note Vref is not restricted to VCC. The allowable voltage range of this pin is specified in the Recommended Operating Conditions. Vref R1 OUT ISINK OCP C2 Gate Drive GND Figure 8-7. NMOS Open-Drain Output Select a value for C2 based on the system bandwidth specifications as shown in Equation 1. u ¦BW +] 1 2S u R1 u C2 (1) Most applications do not require this C2 filtering capacitor. 12 Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: TMAG5115 TMAG5115 www.ti.com SBASAJ1A – DECEMBER 2022 – REVISED FEBRUARY 2023 8.3.5 Protection Circuits The TMAG5115 device is fully protected against overcurrent and overtemperature conditions. Table 8-1 lists a summary of the protection circuits. Table 8-1. Protection Circuit Summary FAULT CONDITION DEVICE FET overload ISINK ≥ ISC Operating Output current is clamped to ISC DESCRIPTION RECOVERY ISINK < ISC Overtemperature TJ ≥ 156°C Operating Device will shutdown until recovery temperature is reached TJ ≤ 156°C 8.3.5.1 Short-Circuit Protection An analog current-limit circuit limits the current through the FET. The driver current is clamped to ISC. During this clamping, the rDS(on) of the output FET is increased from the nominal value. 8.3.5.2 Overtemperature Protection The TMAG5115 features overtemperature protection to prevent damage to the device and system in the case of runaway thermal heating. If the output is short-circuited, there will be greater power dissipation through the device causing the junction temperature to rise. If the temperature rises to above the limits specified in the Electrical Characteristics table, the device will enter a thermal shutdown and the OUT pin will turn to High-Z regardless of the current magnetic field detected. The TMAG5115 thermal shutdown can be differentiated from normal operation by viewing the supply current into the device. While in thermal shutdown, the supply current is lower than normal operation. BOP External Magnetic Field BRP TSHUT TREC Temperature ICC Supply Current ICCSHUTDOWN Output Figure 8-8. TMAG5115 Overtemperature Protection Diagram The TMAG5115 can support a supply voltage of 2.5 V to 26 V. Higher temperature and supply conditions can increase the junction temperature of the device, however, which could exceed the thermal shutdown limit. This can cause a device shutdown. TI recommends to not exceed a temperature and supply combination shown in Figure 8-9. Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: TMAG5115 13 TMAG5115 www.ti.com SBASAJ1A – DECEMBER 2022 – REVISED FEBRUARY 2023 30 Max Supply (V) 25 20 15 10 5 0 -40 -25 -10 5 20 35 50 65 Temperature (C) 80 95 110 125 Figure 8-9. TMAG5115 Recommended Supply and Temperature Curve 8.4 Device Functional Modes The TMAG5115 is active only when VCC is between 2.5 V and 26 V and TJ is less than 156°C. 14 Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: TMAG5115 TMAG5115 www.ti.com SBASAJ1A – DECEMBER 2022 – REVISED FEBRUARY 2023 9 Application and Implementation Note Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes, as well as validating and testing their design implementation to confirm system functionality. 9.1 Application Information The TMAG5115 is used in magnetic position sensing applications. The device features a high-speed architecture to facilitate more precise field measurement. With latching magnetic characteristics, the output is turned low or high respectively with a sufficiently strong south or north pole facing the package top side. When removing the magnetic field, the device keeps its previous state. For reliable functionality, the magnet must apply a flux density at the sensor greater than the corresponding maximum BOP or BRP numbers specified in the Magnetic Characteristics table. Add additional margin to account for mechanical tolerance, temperature effects, and magnet variation. 9.2 Typical Applications 9.2.1 Standard Circuit C2 680 pF (Optional) 2 OUT R1 10 kŸ 3 1 VCC VCC C1 0.01 µF (minimum) Figure 9-1. Typical Application Circuit 9.2.1.1 Design Requirements For this design example, use the parameters listed in Table 9-1 as the input parameters. Table 9-1. Design Parameters DESIGN PARAMETER REFERENCE EXAMPLE VALUE Supply voltage VCC 3.0 V to 3.6 V System bandwidth ƒBW 10 kHz Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: TMAG5115 15 TMAG5115 www.ti.com SBASAJ1A – DECEMBER 2022 – REVISED FEBRUARY 2023 9.2.1.2 Detailed Design Procedure Table 9-2. External Components COMPONENT PIN 1 PIN 2 RECOMMENDED C1 VCC GND A 0.01-µF (minimum) ceramic capacitor rated for VCC C2 OUT GND Optional: Place a ceramic capacitor to GND OUT REF(1) R1 (1) Requires a resistor pullup REF is not a pin on the TMAG5115 device, but a REF supply-voltage pullup is required for the OUT pin. The OUT pin may be pulled up to VCC. 9.2.1.2.1 Configuration Example In a 3.3-V system, 3.0 V ≤ Vref ≤ 3.6 V. Use Equation 2 to calculate the allowable range for R1. Vref max V min d R1 d ref 30 mA 100 µA (2) For this design example, use Equation 3 to calculate the allowable range of R1. 3.4 V 3.2 V d R1 d 30 mA 100 µA (3) Therefore: 120 Ω ≤ R1 ≤ 30 kΩ (4) After finding the allowable range of R1 (Equation 4), select a value between 500 Ω and 32 kΩ for R1. Assuming a system bandwidth of 10 kHz, use Equation 5 to calculate the value of C2. u ¦BW +] 1 2S u R1 u C2 (5) For this design example, use Equation 6 to calculate the value of C2. 2 u 10 kHz 1 2S u R1 u C2 (6) An R1 value of 10 kΩ and a C2 value less than 820 pF satisfy the requirement for a 10-kHz system bandwidth. A selection of R1 = 10 kΩ and C2 = 680 pF would cause a low-pass filter with a corner frequency of 23.4 kHz. 16 Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: TMAG5115 TMAG5115 www.ti.com SBASAJ1A – DECEMBER 2022 – REVISED FEBRUARY 2023 9.2.1.3 Application Curves OUT OUT R1 = 10 kΩ pull-up R1 = 10-kΩ pull-up No C2 Figure 9-2. 10-kHz Switching Magnetic Field C2 = 680 pF Figure 9-3. 10-kHz Switching Magnetic Field 0 -2 Magnitude (dB) -4 -6 -8 -10 -12 -14 100 1000 10000 Frequency (Hz) R1 = 10-kΩ pull-up 100000 D011 C2 = 680 pF Figure 9-4. Low-Pass Filtering Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: TMAG5115 17 TMAG5115 www.ti.com SBASAJ1A – DECEMBER 2022 – REVISED FEBRUARY 2023 9.3 Power Supply Recommendations The TMAG5115 device is designed to operate from an input voltage supply range between 2.5 V and 26 V. A recommended 0.1-µF ceramic capacitor rated for VCC must be placed as close to the TMAG5115 as possible. Larger values of the bypass capacitor may be required to attenuate any significant high-frequency ripple and noise components generated by the power source. TI recommends limiting the supply voltage variation to less than 50 mVPP. 9.4 Layout 9.4.1 Layout Guidelines The bypass capacitor should be placed near the TMAG5115 device for efficient power delivery with minimal inductance. The external pullup resistor should be placed near the microcontroller input to provide the most stable voltage at the input; alternatively, an integrated pullup resistor within the GPIO of the microcontroller can be used. Generally, using PCB copper planes underneath the TMAG5115 device has no effect on magnetic flux and does not interfere with device performance. This is because copper is not a ferromagnetic material. However, if nearby system components contain iron or nickel, they may redirect magnetic flux in unpredictable ways. 9.4.2 Layout Example VCC OUT GND Figure 9-5. TMAG5115 Layout Example 18 Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: TMAG5115 TMAG5115 www.ti.com SBASAJ1A – DECEMBER 2022 – REVISED FEBRUARY 2023 10 Device and Documentation Support 10.1 Device Support 10.1.1 Hall Sensor Location Centered ±100 µm 700 µm ± 50 µm Figure 10-1. Hall Sensor Location (Not to Scale) 10.2 Receiving Notification of Documentation Updates To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on Subscribe to updates to register and receive a weekly digest of any product information that has changed. For change details, review the revision history included in any revised document. 10.3 Support Resources TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight from the experts. Search existing answers or ask your own question to get the quick design help you need. Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. 10.4 Trademarks TI E2E™ is a trademark of Texas Instruments. All trademarks are the property of their respective owners. 10.5 Electrostatic Discharge Caution This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. 10.6 Glossary TI Glossary This glossary lists and explains terms, acronyms, and definitions. 11 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: TMAG5115 19 PACKAGE OPTION ADDENDUM www.ti.com 3-Mar-2023 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) Samples (4/5) (6) TMAG5115A1CQDBZR ACTIVE SOT-23 DBZ 3 3000 RoHS & Green SN Level-1-260C-UNLIM -40 to 125 15A1 Samples TMAG5115B1CQDBZR ACTIVE SOT-23 DBZ 3 3000 RoHS & Green SN Level-1-260C-UNLIM -40 to 125 15B1 Samples (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of