TPA2080D1YZGR

Product Folder Sample & Buy Technical Documents Support & Community Tools & Software TPA2080D1 SLOS733B – JANUARY 2012 – REVISED APRIL 2016 TPA2080D1 2.2-W Constant Output Power Class-D Audio Amplifier With Class-G Boost Converter 1 Features 3 Description • The TPA2080D1 device is a high-efficiency Class-D audio power amplifier with an integrated Class-G boost converter that enhances efficiency at low output power. It drives up to 2.2 W into an 4-Ω speaker (1% THD+N). With 85% typical efficiency, the TPA2080D1 helps extend battery life when playing audio. 1 • • • 2.2 W into 4-Ω Load from 3.6-V Supply (1% THD+N) Integrated Class-G Boost Converter – Increases Efficiency at Low Output Power Low Quiescent Current of 3.5 mA from 3.6 V Thermal and Short-Circuit Protection With Auto Recovery 20-dB Fixed Gain Available in 1.53-mm × 1.98-mm, 0.5-mm pitch 12-ball WCSP (DSBGA) Package 2 Applications The built-in boost converter generates a 5.75-V supply voltage for the Class-D amplifier when high output power is required. This provides a louder audio output than a stand-alone amplifier directly connected to the battery. During low audio output power periods, the boost converter deactivates and connects VBAT directly to the Class-D amplifier supply, PVDD. This improves overall efficiency. • • • The TPA2080D1 has an integrated low-pass filter to improve the RF rejection and reduce DAC out-ofband noise, increasing the signal-to-noise ratio (SNR). • • Cell Phones PDA, GPS Portable Electronics and Speakers The TPA2080D1 is available in a space-saving 1.53-mm × 1.982-mm, 0.5-mm pitch WCSP package (YZG). Device Information(1) PART NUMBER TPA2080D1 PACKAGE DSBGA (12) BODY SIZE (NOM) 1.53 mm × 1.98 mm (1) For all available packages, see the orderable addendum at the end of the data sheet. Simplified Application Diagram 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. TPA2080D1 SLOS733B – JANUARY 2012 – REVISED APRIL 2016 www.ti.com Table of Contents 1 2 3 4 5 6 7 8 9 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Device Comparison Table..................................... Pin Configuration and Functions ......................... Specifications......................................................... 1 1 1 2 3 4 4 7.1 7.2 7.3 7.4 7.5 7.6 7.7 4 5 5 5 5 6 7 Absolute Maximum Ratings ...................................... ESD Ratings.............................................................. Recommended Operating Conditions....................... Thermal Information .................................................. Electrical Characteristics........................................... Operating Characteristics.......................................... Typical Characteristics .............................................. Parameter Measurement Information ................ 10 Detailed Description ............................................ 11 9.1 Overview ................................................................. 11 9.2 Functional Block Diagram ....................................... 11 9.3 Feature Description................................................. 11 9.4 Device Functional Modes........................................ 14 10 Application and Implementation........................ 15 10.1 Application Information.......................................... 15 10.2 Typical Application ................................................ 15 11 Power Supply Recommendations ..................... 19 11.1 Power Supply Decoupling Capacitors................... 19 12 Layout................................................................... 19 12.1 Layout Guidelines ................................................. 19 12.2 Layout Example .................................................... 21 13 Device and Documentation Support ................. 22 13.1 13.2 13.3 13.4 13.5 Device Support...................................................... Community Resources.......................................... Trademarks ........................................................... Electrostatic Discharge Caution ............................ Glossary ................................................................ 22 22 22 22 22 14 Mechanical, Packaging, and Orderable Information ........................................................... 23 14.1 Package Dimensions ............................................ 23 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision A (October 2012) to Revision B Page • Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section. ................................................................................................. 1 • Removed Ordering Information table .................................................................................................................................... 1 Changes from Original (January 2012) to Revision A Page • Added (DSBGA) to the Packaged Devices of the ORDERING INFORMATION table .......................................................... 1 • Changed Feature From: Available in 1.53-mm × 1.98-mm, 0.5-mm pitch 12-ball WCSP Package To: Available in 1.53-mm × 1.98-mm, 0.5-mm pitch 12-ball WCSP (DSBGA) Package ................................................................................ 1 2 Submit Documentation Feedback Copyright © 2012–2016, Texas Instruments Incorporated Product Folder Links: TPA2080D1 TPA2080D1 www.ti.com SLOS733B – JANUARY 2012 – REVISED APRIL 2016 5 Device Comparison Table DEVICE NUMBER SPEAKER AMP TYPE SPECIAL FEATURES OUTPUT POWER (W) PSRR (dB) TPA2013D1 Class D Boost Converter 2.7 95 TPA2015D1 Class D Adaptive Boost Converter 2 85 TPA2025D1 Class D Class G Boost Converter 2 65 TPA2080D1 Class D Class G Boost Converter 2.2 62.5 Submit Documentation Feedback Copyright © 2012–2016, Texas Instruments Incorporated Product Folder Links: TPA2080D1 3 TPA2080D1 SLOS733B – JANUARY 2012 – REVISED APRIL 2016 www.ti.com 6 Pin Configuration and Functions YZG Package 12-Pin DSBGA Top View A1 A2 A3 PVDD SW BGND B1 B2 B3 OUT+ N/C VBAT C1 C2 C3 OUT– EN IN+ D1 D2 D3 PGND AGND IN– Pin Functions PIN TYPE DESCRIPTION NAME NO. PVDD A1 O Boost converter output and Class-D power stage supply voltage. SW A2 I Boost converter switch input; connect boost inductor between VBAT and SW. BGND A3 P Boost converter power ground. OUT+ B1 O Positive audio output. N/C B2 – No Connection VBAT B3 P Supply voltage. OUT– C1 O Negative audio output. EN C2 I Device enable; set to logic high to enable. IN+ C3 I Positive audio input. PGND D1 P Class-D power ground. AGND D2 P Analog ground. IN– D3 I Negative audio input. 7 Specifications 7.1 Absolute Maximum Ratings Over operating free–air temperature range, TA= 25°C (unless otherwise noted) (1) MIN MAX UNIT Supply voltage VBAT –0.3 6 V Input voltage, VI IN+, IN– –0.3 VBAT + 0.3 V Minimum load resistance Ω 3.2 Output continuous total power dissipation See Thermal Information Operating free-air temperature, TA –40 85 °C Operating junction temperature, TJ –40 150 °C Storage temperature, Tstg –65 150 °C (1) 4 Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability. Submit Documentation Feedback Copyright © 2012–2016, Texas Instruments Incorporated Product Folder Links: TPA2080D1 TPA2080D1 www.ti.com SLOS733B – JANUARY 2012 – REVISED APRIL 2016 7.2 ESD Ratings VALUE V(ESD) (1) (2) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) ±2000 Charged-device model (CDM), per JEDEC specification JESD22-C101 (2) ±500 Machine model (MM) ±100 UNIT V JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 7.3 Recommended Operating Conditions MIN MAX Supply voltage, VBAT 2.5 5.2 UNIT VIH High–level input voltage, END 1.3 VIL Low–level input voltage, END 0.6 V TA Operating free-air temperature –40 85 °C TJ Operating junction temperature –40 150 °C V V 7.4 Thermal Information TPA2080D1 THERMAL METRIC (1) YZG (DSBGA) UNIT 12 PINS RθJA Junction-to-ambient thermal resistance 97.3 °C/W RθJC(top) Junction-to-case (top) thermal resistance 36.7 °C/W RθJB Junction-to-board thermal resistance 55.9 °C/W ψJT Junction-to-top characterization parameter 13.9 °C/W ψJB Junction-to-board characterization parameter 49.5 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance — °C/W (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. 7.5 Electrical Characteristics VBAT = 3.6 V, TA = 25°C, RL = 8 Ω + 33 μH (unless otherwise noted) PARAMETER TEST CONDITIONS VBAT supply voltage range Class-D supply voltage range MIN TYP 2.5 EN = VBAT, boost converter active Boost converter disabled (in bypass mode) MAX 5.2 5.75 2.5 Supply under voltage shutdown 5.2 2.2 Operating quiescent current EN = VBAT = 3.6 V Shutdown quiescent current VBAT = 2.5 V to 5.2 V, EN = GND Input common-mode voltage range IN+, IN– Start-up time 2 0.2 0.6 6 Product Folder Links: TPA2080D1 V V V 6 mA 1 μA 1.3 V 10 ms Submit Documentation Feedback Copyright © 2012–2016, Texas Instruments Incorporated UNIT 5 TPA2080D1 SLOS733B – JANUARY 2012 – REVISED APRIL 2016 www.ti.com 7.6 Operating Characteristics VBAT= 3.6 V, EN = VBAT, TA = 25°C, RL = 8 Ω + 33 μH (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX 5.4 5.75 6.4 UNIT BOOST CONVERTER PVDD Boost converter output voltage range Boost converter input current limit IBOOST = 0 mA IBOOST = 700 mA 5.6 Power supply current 1800 Boost converter starts up from full shutdown IL Boost converter start-up current limit fBOOST V 600 Boost converter wakes up from auto-pass through mode mA 1000 Boost converter frequency 1.2 MHz CLASS-D AMPLIFIER PO Output power THD = 1%, VBAT = 2.5 V, f = 1 kHz 1440 THD = 1%, VBAT = 3 V, f = 1 kHz 1750 THD = 1%, VBAT = 3.6 V, f = 1 kHz 1900 THD = 1%, VBAT = 2.5 V, f = 1 kHz, RL = 4 Ω + 33 µH 1460 THD = 1%, VBAT = 3 V, f = 1 kHz, RL = 4 Ω + 33 µH 1800 THD = 1%, VBAT = 3.6 V, f = 1 kHz, RL = 4 Ω + 33 µH 2280 19.5 mW AV Voltage gain 20 20.5 dB VOOS Output offset voltage 2 10 mV Short-circuit protection threshold current 2 Input impedance (per input pin) RIN Input impedance in shutdown (per input pin) ZO Output impedance in shutdown 24 EN = 0 V 2 VRMS Class-D output voltage threshold when boost converter automatically turns on 2 VPK Class-D and boost combined efficiency EN Noise output voltage Signal-to-noise ratio 275 PO = 500 mW, VBAT = 3.6 V Total harmonic distortion plus noise (1) AC PSRR AC-Power supply ripple rejection (output referred) AC CMRR AC-Common mode rejection ratio (output referred) 300 325 kHz 90% A-weighted 49 Unweighted 65 1.7 W, RL = 8 Ω + 33 µH. A-weighted 97.5 1.7 W, RL = 8 Ω + 33 µH. Unweighted 95 2 W, RL = 4 Ω + 33 µH. A-weighted 95 2 W, RL = 4 Ω + 33 µH. Unweighted 6 kΩ EN = 0 V Class-D switching frequency (1) 2 Boost converter auto-pass through threshold η THD+N kΩ 1300 Maximum input voltage swing fCLASS-D SNR A μVRMS dB 93 PO = 100 mW, f = 1 kHz 0.06% PO = 500 mW, f = 1 kHz 0.07% PO = 1.7 W, f = 1 kHz, RL = 8 Ω + 33 µH 0.07% PO = 2 W, f = 1 kHz, RL = 4 Ω + 33 µH 0.15% 200 mVPP square ripple, VBAT = 3.8 V, f = 217 Hz 62.5 200 mVPP square ripple, VBAT = 3.8 V, f = 1 kHz 62.5 200 mVPP square ripple, VBAT = 3.8 V, f = 217 Hz 71 200 mVPP square ripple, VBAT = 3.8 V, f = 1 kHz 71 dB dB A-weighted Submit Documentation Feedback Copyright © 2012–2016, Texas Instruments Incorporated Product Folder Links: TPA2080D1 TPA2080D1 www.ti.com SLOS733B – JANUARY 2012 – REVISED APRIL 2016 7.7 Typical Characteristics VBAT = 3.6 V, CI = 1 µF, CBOOST = 22 µF, LBOOST = 2.2 µH, EN = VBAT, and Load = 8 Ω + 33 µH, no ferrite bead unless otherwise specified. 3.0 5.0 RL = 4 Ω + 33 µH Gain = 20 dB f = 1 kHz 4.5 4.0 PO − Output Power − W PO − Output Power − W 2.5 2.0 1.5 1.0 0.0 2.3 2.8 THD + N = 10% THD + N = 1% 3.3 3.8 4.3 2.0 1.5 THD + N = 10% THD + N = 1% 0.0 2.5 4.8 4.5 5.0 Figure 2. Output Power vs Supply Voltage 0.6 0.5 0.4 0.3 0.2 RL = 8 Ω + 33 µH Gain = 20 dB f = 1 kHz 0.1 0.0 0.0 4.0 Figure 1. Output Power vs Supply Voltage 0.5 1.0 1.5 2.0 IVBAT − Total Supply Current − A 0.7 3.5 VBAT − Supply Voltage − V 1.2 0.8 3.0 VBAT − Supply Voltage − V VBAT = 2.8 V VBAT = 3.0V VBAT = 3.6 V VBAT = 4.2 V VBAT = 5.0 V 0.9 RL = 4 Ω + 33 µH Gain = 20 dB f = 1 kHz 1.0 0.8 0.6 0.4 VBAT = 2.8 V VBAT = 3.0V VBAT = 3.6 V VBAT = 4.2 V VBAT = 5.0 V 0.2 0.0 0.0 2.5 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 PO − Output Power − W PO − Output Power − W Figure 3. Total Supply Current vs Output Power Figure 4. Total Supply Current vs Output Power 10 PO = 225 mW PO = 560 mW PO = 1 W PO = 1.7 W VBAT = 3.6 V RL = 8 Ω + 33 µH Gain = 20 dB 1 0.1 0.01 0.001 20 100 1k f − Frequency − Hz 10k 20k THD+N − Total Harmonic Distortion + Noise − % IVBAT − Total Supply Current − A 2.5 0.5 1.0 THD+N − Total Harmonic Distortion + Noise − % 3.0 1.0 RL = 8 Ω + 33 µH Gain = 20 dB f = 1 kHz 0.5 3.5 10 PO = 62 mW PO = 450 mW PO = 1.1 W PO = 2 W VBAT = 3.6 V RL = 4 Ω + 33 µH Gain = 20 dB 1 0.1 0.01 0.001 20 Figure 5. THD+N vs Frequency 100 1k f − Frequency − Hz 10k 20k Figure 6. THD+N vs Frequency Submit Documentation Feedback Copyright © 2012–2016, Texas Instruments Incorporated Product Folder Links: TPA2080D1 7 TPA2080D1 SLOS733B – JANUARY 2012 – REVISED APRIL 2016 www.ti.com Typical Characteristics (continued) RL = 8 Ω + 33 µH Gain = 20 dB f = 1 kHz VBAT = 3.0 V VBAT = 3.6 V VBAT = 4.2 V VBAT = 5.0 V 10 THD+N − Total Harmonic Distortion + Noise − % 100 1 0.1 0.01 1m 10m 100m 1 4 0.1 0.01 1m 1 5 Figure 8. THD+N vs Output Power 80 60 40 VBAT = 2.8 V VBAT = 3.0 V VBAT = 3.6 V VBAT = 4.2 V VBAT = 5.0 V RL = 8 Ω + 33 µH Gain = 20 dB f = 1 kHz 0.1 1 60 40 20 VBAT = 2.8 V VBAT = 3.0 V VBAT = 3.6 V VBAT = 4.2 V VBAT = 5.0 V RL = 4 Ω + 33 µH Gain = 20 dB f = 1 kHz 0 0.01 3 0.1 1 4 PO − Output Power − W PO − Output Power − W Figure 9. Total Efficiency vs Output Power Figure 10. Total Efficiency vs Output Power 1.4 VBAT = 2.8 V VBAT = 3.0 V VBAT = 3.6 V VBAT = 4.2 V VBAT = 5.0 V 0.6 0.5 0.4 0.3 0.2 RL = 8 Ω + 33 µH Gain = 20 dB f = 1 kHz 0.1 0.5 1.0 1.5 2.0 2.5 PD − Total Power Dissipation − W 0.9 0.0 0.0 100m Figure 7. THD+N vs Output Power 80 0.7 10m PO − Output Power − W 0 0.01 PD − Total Power Dissipation − W 1 100 0.8 RL = 4 Ω + 33 µH Gain = 20 dB f = 1 kHz VBAT = 3.0 V VBAT = 3.6 V VBAT = 4.2 V VBAT = 5.0 V 10 100 20 8 100 PO − Output Power − W Efficiency − % Efficiency − % THD+N − Total Harmonic Distortion + Noise − % VBAT = 3.6 V, CI = 1 µF, CBOOST = 22 µF, LBOOST = 2.2 µH, EN = VBAT, and Load = 8 Ω + 33 µH, no ferrite bead unless otherwise specified. 1.2 RL = 4 Ω + 33 µH Gain = 20 dB f = 1 kHz 1.0 0.8 0.6 0.4 VBAT = 2.8 V VBAT = 3.0 V VBAT = 3.6 V VBAT = 4.2 V VBAT = 5.0 V 0.2 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 PO − Output Power − W PO − Output Power − W Figure 11. Total Power Dissipation vs Output Power Figure 12. Total Power Dissipation vs Output Power Submit Documentation Feedback Copyright © 2012–2016, Texas Instruments Incorporated Product Folder Links: TPA2080D1 TPA2080D1 www.ti.com SLOS733B – JANUARY 2012 – REVISED APRIL 2016 Typical Characteristics (continued) VBAT = 3.6 V, CI = 1 µF, CBOOST = 22 µF, LBOOST = 2.2 µH, EN = VBAT, and Load = 8 Ω + 33 µH, no ferrite bead unless otherwise specified. 10m 0 RL = 8 Ω + 33 µH Gain = 20 dB Supply Ripple Rejection − dB Supply Current − A 8m 6m 4m 2m −40 −60 −80 VBAT − V 1k f − Frequency − Hz Figure 13. Quiescent Supply Current vs Battery Voltage Figure 14. Supply Ripple Rejection vs Frequency 0 2.9 3.2 3.5 3.8 4.1 4.4 5.0 20 −80 RL = 8 Ω + 33 µH Input Level = 0.2 Vpp Gain = 20 dB CIN = 1 µF −20 4.7 VBAT = 2.5 V VBAT = 3.0 V VBAT = 3.6 V VBAT = 4.2 V VBAT = 5.0 V −40 −60 100 10k 20k RL = 8 Ω + 33 µH No Input Signal Gain = 20 dB −90 −100 −110 −120 −130 −80 −140 −100 −150 20 100 1k f − Frequency − Hz 10k 20k 0 Figure 15. Common-Mode Rejection Ratio vs Frequency 4k 6k 8k 10k 12k 14k 16k 18k 20k 22k 24k Frequency − Hz 6 VBAT = 3.6 V Gain = 20 dB POUT = 100 mW @ 1 kHz RL = 8 Ω + 33 µH EN VOUT+ − VOUT− 4 V − Voltage − V 4 2k Figure 16. A-Weighted Output Noise vs Frequency 6 V − Voltage − V −20 VBAT = 2.5 V VBAT = 3.0 V VBAT = 3.6 V VBAT = 4.2 V VBAT = 5.0 V −100 2.6 Amplitude − dBV CMRR − Common−Mode Rejection Ratio − dB 0 2.3 RL = 8 Ω + 33 µH Input Level = 0.2 Vpp Gain = 20 dB Output Referred 2 0 −2 −2m VBAT = 3.6 V Gain = 20 dB POUT = 100 mW @ 1 kHz RL = 8 Ω + 33 µH EN VOUT+ − VOUT− 2 0 0 2m 4m t − Time − s 6m 8m 10m −2 −2.5m Figure 17. Start-Up timing −1.5m −500.0u 500.0u t − Time − s 1.5m 2.5m Figure 18. Shutdown timing Submit Documentation Feedback Copyright © 2012–2016, Texas Instruments Incorporated Product Folder Links: TPA2080D1 9 TPA2080D1 SLOS733B – JANUARY 2012 – REVISED APRIL 2016 www.ti.com Typical Characteristics (continued) VBAT = 3.6 V, CI = 1 µF, CBOOST = 22 µF, LBOOST = 2.2 µH, EN = VBAT, and Load = 8 Ω + 33 µH, no ferrite bead unless otherwise specified. Figure 19. EMC Performance PO = 750 mW With 2-Inch Speaker Cable 8 Parameter Measurement Information All parameters are measured according to the conditions described in Specifications. TPA2080D1 1 ˩F + Measurement Output – IN+ OUT+ Load IN– OUT– + Measurement Input – 30-kHz Low-Pass Filter 1 ˩F SW PVDD EN VBAT 10 k GND 22 ˩F 2.2 ˩H 10 ˩F + Supply – (1) The 1-µF input capacitors on IN+ and IN– were shorted for input common-mode voltage measurements. (2) A 33-µH inductor was placed in series with the load resistor to emulate a small speaker for efficiency measurements. (3) The 30-kHz low-pass filter is required even if the analyzer has an internal low-pass filter. An R-C low-pass filter (100 Ω, 47 nF) is used on each output for the data sheet graphs. Figure 20. Test Setup for Graphs 10 Submit Documentation Feedback Copyright © 2012–2016, Texas Instruments Incorporated Product Folder Links: TPA2080D1 TPA2080D1 www.ti.com SLOS733B – JANUARY 2012 – REVISED APRIL 2016 9 Detailed Description 9.1 Overview The TPA2080D1 is a high-efficiency Class-D audio power amplifier with an integrated Class-G boost converter that enhances efficiency at low output power. The built-in converter generates a 5.75-V supply voltage for the Class-D amplifier when high output power is required. The device has a integrated low-pass filter to improve the RF rejection and reduce DAC out-of-band noise, increasing the signal-to-noise ratio (SNR). 9.2 Functional Block Diagram 9.3 Feature Description 9.3.1 Fully Differential Amplifier The TPA2080D1 is a fully differential amplifier with differential inputs and outputs. The fully differential amplifier consists of a differential amplifier with common-mode feedback. The differential amplifier ensures that the amplifier outputs a differential voltage on the output that is equal to the differential input times the gain. The common-mode feedback ensures that the common-mode voltage at the output is biased around VCC/2 regardless of the common-mode voltage at the input. The fully differential TPA2080D1 can still be used with a single-ended input; however, the TPA2080D1 must be used with differential inputs when in a noisy environment, like a wireless handset, to ensure maximum noise rejection. 9.3.1.1 Advantages of Fully Differential Amplifiers • Input-coupling capacitors not required: – The fully differential amplifier allows the inputs to be biased at voltage other than mid-supply. The inputs of Submit Documentation Feedback Copyright © 2012–2016, Texas Instruments Incorporated Product Folder Links: TPA2080D1 11 TPA2080D1 SLOS733B – JANUARY 2012 – REVISED APRIL 2016 www.ti.com Feature Description (continued) • • the TPA2080D1 can be biased anywhere within the common-mode input voltage range listed in Recommended Operating Conditions and Electrical Characteristics. If the inputs are biased outside of that range, input-coupling capacitors are required. Midsupply bypass capacitor, C(BYPASS), not required: – The fully differential amplifier does not require a bypass capacitor. Any shift in the midsupply affects both positive and negative channels equally and cancels at the differential output. Better RF-immunity: – GSM handsets save power by turning on and shutting off the RF transmitter at a rate of 217 Hz. The transmitted signal is picked up on input and output traces. The fully differential amplifier cancels the signal better than the typical audio amplifier. 9.3.2 Short-Circuit Auto-Recovery When a short-circuit event happens, the TPA2080D1 goes to low duty cycle mode and tries to reactivate itself every 1.6 seconds. The auto-recovery will continue until the short-circuit event stops. This feature protects the device without affecting the long-term reliability of the device. 9.3.3 Operation With DACs and CODECs Large noise voltages can be present at the output of ΔΣ DACs and CODECs, just above the audio frequency (for example, 80 kHz with a 300 mVP-P). This out-of-band noise is due to the noise shaping of the delta-sigma modulator in the DAC. Some Class-D amplifiers have higher output noise when used in combination with these DACs and CODECs. This is because out-of-band noise from the CODEC/DAC mixes with the Class-D switching frequencies in the audio amplifier input stage. The TPA2080D1 has a built-in low-pass filter with cutoff frequency at 55 kHz that reduces the out-of-band noise and RF noise, filtering out-of-band frequencies that could degrade in-band noise performance. If driving the TPA2080D1 input with 4th-order or higher ΔΣ DACs or CODECs, add an R-C low pass filter at each of the audio inputs (IN+ and IN–) of the TPA2080D1 to ensure best performance. The recommended resistor value is 100 Ω and the capacitor value of 47 nF. 9.3.4 Speaker Load Limitation Speakers are nonlinear loads with varying impedance (magnitude and phase) over the audio frequency. A portion of speaker load current can flow back into the boost converter output through the Class-D output H-bridge high-side device. This is dependent on the phase change over frequency on the speaker, and the audio signal amplitude and frequency content. Most portable speakers have limited phase change at the resonant frequency, typically no more than 40 or 50 degrees. To avoid excess flow-back current, use speakers with limited phase change. Otherwise, flow-back current could drive the PVDD voltage above the absolute maximum recommended operational voltage. Confirm proper operation by connecting the speaker to the TPA2080D1 and driving it at maximum output swing. Observe the PVDD voltage with an oscilloscope. In the unlikely event the PVDD voltage exceeds 6.5 V, add a 6.8-V Zener diode between PVDD and ground to ensure the TPA2080D1 operates properly. The amplifier has thermal overload protection and deactivates if the die temperature exceeds 150°C. It automatically reactivates once die temperature returns below 150°C. Built-in output overcurrent protection deactivates the amplifier if the speaker load becomes short-circuited. The amplifier automatically restarts 1.6 seconds after the overcurrent event. Although the TPA2080D1 Class-D output can withstand a short between OUT+ and OUT–, do not connect either output directly to GND, VDD, or VBAT as this could damage the device. 9.3.5 Filter-Free Operation and Ferrite Bead Filters. A ferrite bead filter can often be used if the design is failing radiated emissions without an LC filter and the frequency sensitive circuit is greater than 1 MHz. This filter functions well for circuits that just have to pass FCC and CE because FCC and CE only test radiated emissions greater than 30 MHz. When choosing a ferrite bead, choose one with high impedance at high frequencies, and very low impedance at low frequencies. In addition, select a ferrite bead with adequate current rating to prevent distortion of the output signal. Use an LC output filter if there are low-frequency, (< 1 MHz) EMI-sensitive circuits or long leads from amplifier to speaker. Figure 21 shows a typical ferrite bead output filters. 12 Submit Documentation Feedback Copyright © 2012–2016, Texas Instruments Incorporated Product Folder Links: TPA2080D1 TPA2080D1 www.ti.com SLOS733B – JANUARY 2012 – REVISED APRIL 2016 Feature Description (continued) Ferrite Chip Bead OUTP 1 nF Ferrite Chip Bead OUTN 1 nF Figure 21. Typical Ferrite Chip Bead Filter Table 1. Suggested Chip Ferrite Bead LOAD VENDOR PART NUMBER SIZE 8Ω Murata BLM18EG121SN1 0603 4Ω TDK MPZ2012S101A 0805 9.3.6 Boost Converter Auto Pass Through (APT) The TPA2080D1 consists of a Class-G boost converter and a Class-D amplifier. The boost converter operates from the supply voltage, VBAT, and generates a higher output voltage PVDD at 5.75 V. PVDD drives the supply voltage of the Class-D amplifier. This improves loudness over non-boosted solutions. The boost converter has a pass through mode in which it turns off automatically and PVDD is directly connected to VBAT through an internal bypass switch. The boost converter is adaptive and operates between pass through mode and boost mode depending on the output audio signal amplitude. When the audio output amplitude exceeds the auto pass through (APT) threshold, the boost converter is activated automatically and goes to boost mode. The transition time from normal mode to boost mode is fast enough to prevent clipping large transient audio signals. The APT threshold of the TPA2080D1 is fixed at 2 VPEAK. When the audio output signal is below APT threshold, the boost converter is deactivated and goes to pass through mode. The adaptive boost converter maximizes system efficiency at lower audio output levels. The Class-G boost converter is designed to drive the Class-D amplifier only. Do not use the boost converter to drive external devices. Figure 22 shows how the adaptive boost converter behaves with a typical audio signal. Figure 22. Class-G Boost Converter With Typical Music Playback Submit Documentation Feedback Copyright © 2012–2016, Texas Instruments Incorporated Product Folder Links: TPA2080D1 13 TPA2080D1 SLOS733B – JANUARY 2012 – REVISED APRIL 2016 www.ti.com 9.4 Device Functional Modes 9.4.1 Shutdown Mode The TPA2080D1 can be put in shutdown mode when asserting EN to a logic LOW. While in shutdown mode, the device output stage is turned off and the current consumption is very low. 14 Submit Documentation Feedback Copyright © 2012–2016, Texas Instruments Incorporated Product Folder Links: TPA2080D1 TPA2080D1 www.ti.com SLOS733B – JANUARY 2012 – REVISED APRIL 2016 10 Application and Implementation NOTE Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality. 10.1 Application Information These typical connection diagrams highlight the required external components and system level connections for proper operation of the device. Each of these configurations can be realized using the Evaluation Modules (EVMs) for the device. These flexible modules allow full evaluation of the device in the most common modes of operation. Any design variation can be supported by TI through schematic and layout reviews. Visit e2e.ti.com for design assistance and join the audio amplifier discussion forum for additional information. 10.2 Typical Application 10.2.1 TPA2080D1 With Differential Input Signal 2.2uH Connected to Power Supply 2.2uF 10uF - 22uF VBAT Audio Input + SW PVDD IN+ IN- Enable BGND TPA2080D1 OUT+ EN OUTAGND PGND Copyright © 2016, Texas Instruments Incorporated Figure 23. Typical Application Schematic With Differential Input Signals 10.2.1.1 Design Requirements For this design example, use the parameters listed in Table 2. Table 2. Design Parameters DESIGN PARAMETER Power supply Enable inputs Speaker EXAMPLE VALUE 3.6 V High > 1.3 V Low < 0.6 V 8Ω Submit Documentation Feedback Copyright © 2012–2016, Texas Instruments Incorporated Product Folder Links: TPA2080D1 15 TPA2080D1 SLOS733B – JANUARY 2012 – REVISED APRIL 2016 www.ti.com 10.2.1.2 Detailed Design Procedure 10.2.1.2.1 Surface Mount Inductor Working inductance decreases as inductor current increases. if the drop in working inductance is severe enough, it may cause the boost converter to become unstable, or cause the TPA2080D1 to reach its current limit at a lower output power than expected. Inductor vendors specify currents at while inductor values decrease by a specific percentage. This can vary from 10% to 35%. Inductance is also affected by DC current and temperature. 10.2.1.2.2 Inductor Selection Inductor current rating is determined by the requirements of the load. The inductance is determined by two factors: the minimum value required for stability and the maximum ripple current permitted in the application. Use Equation 1 to determine the required current rating. Equation 1 shows the approximate relationship between the average inductor current, IL, to the load current, load voltage, and input voltage (IPVDD, PVDD, and VBAT, respectively). Insert IPVDD, PVDD, and VBAT into Equation 1 and solve for IL. The inductor must maintain at least 90% of its initial inductance value at this current. PVDD æ ö IL = IPVDD ´ ç ÷ è VBAT ´ 0.8 ø (1) Ripple current, ΔIL, is peak-to-peak variation in inductor current. Smaller ripple current reduces core losses in the inductor and reduces the potential for EMI. Use Equation 2 to determine the value of the inductor, L. Equation 2 shows the relationship between inductance L, VBAT, PVDD, the switching frequency, fBOOST, and ΔIL. Insert the maximum acceptable ripple current into Equation 2 and solve for L. VBAT ´ (PVDD - VBAT) L= DIL ´ ¦BOOST ´ PVDD (2) ΔIL is inversely proportional to L. Minimize ΔIL as much as is necessary for a specific application. Increase the inductance to reduce the ripple current. Do not use greater than 4.7 μH, as this prevents the boost converter from responding to fast output current changes properly. If using above 3.3 µH, then use at least 10-µF capacitance on PVDD to ensure boost converter stability. The typical inductor value range for the TPA2080D1 is 2.2 μH to 3.3 µH. Select an inductor with less than 0.5-Ω DC resistance, DCR. Higher DCR reduces total efficiency due to an increase in voltage drop across the inductor. Table 3. Sample Inductors L (µH) SUPPLIER COMPONENT CODE SIZE (LxWxH mm) DCR TYP (mΩ) ISAT MAX (A) 2.2 Chilisin Electronics Corp. CLCN252012T-2R2M-N 2.5 x 2 x 1.2 105 1.2 2.2 Toko 1239AS-H-2R2N=P2 2.5 x 2 x 1.2 96 2.3 2.2 Coilcraft XFL4020-222MEC 4 x 4 x 2.15 22 3.5 3.3 Toko 1239AS-H-3R3N=P2 2.5 x 2 x 1.2 160 2 3.3 Coilcraft XFL4020-332MEC 4 x 4 x 2.15 35 2.8 C RANGE 10 to 22 µF, 16 V 10 to 22 µF, 10 V 10 to 22 µF, 10 V 10.2.1.2.3 Surface Mount Capacitors Temperature and applied DC voltage influence the actual capacitance of high-K materials. Table 4 shows the relationship between the different types of high-K materials and their associated tolerances, temperature coefficients, and temperature ranges. Notice that a capacitor made with X5R material can lose up to 15% of its capacitance within its working temperature range. In an application, the working capacitance of components made with high-K materials is generally much lower than nominal capacitance. A worst-case result with a typical X5R material might be –10% tolerance, –15% temperature effect, and –45% DC voltage effect at 50% of the rated voltage. This particular case would result in a working capacitance of 42% (0.9 × 0.85 × 0.55) of the nominal value. Select high-K ceramic capacitors according to the following rules: 1. Use capacitors made of materials with temperature coefficients of X5R, X7R, or better. 2. Use capacitors with DC voltage ratings of at least twice the application voltage. Use minimum 10-V 16 Submit Documentation Feedback Copyright © 2012–2016, Texas Instruments Incorporated Product Folder Links: TPA2080D1 TPA2080D1 www.ti.com SLOS733B – JANUARY 2012 – REVISED APRIL 2016 capacitors for the TPA2080D1. 3. Choose a capacitance value at least twice the nominal value calculated for the application. Multiply the nominal value by a factor of 2 for safety. If a 10-μF capacitor is required, use 20 µF. The preceding rules and recommendations apply to capacitors used in connection with the TPA2080D1. The TPA2080D1 cannot meet its performance specifications if the rules and recommendations are not followed. Table 4. Typical Tolerance and Temperature Coefficient of Capacitance by Material MATERIAL COG / NPO X7R X5R Typical tolerance ±5% ±10% 80% or –20% Temperature ±30 ppm ±15% 22% or –82% Temperature range, °C –55°C to 125°C –55°C to 125°C –30°C to 85°C 10.2.1.2.4 Boost Converter Capacitor Selection The value of the boost capacitor is determined by the minimum value of working capacitance required for stability and the maximum voltage ripple allowed on PVDD in the application. Working capacitance refers to the available capacitance after derating the capacitor value for DC bias, temperature, and aging. Do not use any component with a working capacitance less than 6.8 µF. This corresponds to a 10-μF, 16-V capacitor or a 10-μF, 10-V capacitor. Do not use above 22-μF capacitance as it will reduce the boost converter response time to large output current transients. Equation 3 shows the relationship between the boost capacitance, C, to load current, load voltage, ripple voltage, input voltage, and switching frequency (IPVDD, PVDD, ΔV, VBAT, and fBOOST respectively). Insert the maximum allowed ripple voltage into Equation 3 and solve for C. The 1.5 multiplier accounts for capacitance loss due to applied DC voltage and temperature for X5R and X7R ceramic capacitors. I ´ (PVDD - VBAT) C = 1.5 ´ PVDD DV ´ ¦BOOST ´ PVDD (3) 10.2.1.2.5 Decoupling Capacitors The TPA2080D1 is a high-performance Class-D audio amplifier that requires adequate power supply decoupling. Adequate power supply decoupling to ensures that the efficiency is high and total harmonic distortion (THD) is low. Place a low equivalent-series-resistance (ESR) ceramic capacitor, typically 0.1 µF, within 2 mm of the VBAT ball. Use X5R and X7R ceramic capacitors. This choice of capacitor and placement helps with higher frequency transients, spikes, or digital hash on the line. Additionally, placing this decoupling capacitor close to the TPA2080D1 is important, as any parasitic resistance or inductance between the device and the capacitor causes efficiency loss. In addition to the 0.1-μF ceramic capacitor, place a 2.2-µF to 10-µF capacitor on the VBAT supply trace. This larger capacitor acts as a charge reservoir, providing energy faster than the board supply, thus helping to prevent any droop in the supply voltage. 10.2.1.2.6 Input Capacitors Input audio DC decoupling capacitors are recommended. The input capacitors and TPA2080D1 input impedance form a high-pass filter with the corner frequency, fC, determined in Equation 4. Any mismatch in capacitance between the two inputs will cause a mismatch in the corner frequencies. Severe mismatch may also cause turnon pop noise. Choose capacitors with a tolerance of ±10% or better. Use X5R and X7R ceramic capacitors. 1 fc = (2 x p x RICI ) (4) The value of the input capacitor is important to consider as it directly affects the bass (low frequency) performance of the circuit. Speakers in wireless phones cannot usually respond well to low frequencies, so the corner frequency can be set to block low frequencies in this application. Not using input capacitors can increase output offset. Submit Documentation Feedback Copyright © 2012–2016, Texas Instruments Incorporated Product Folder Links: TPA2080D1 17 TPA2080D1 SLOS733B – JANUARY 2012 – REVISED APRIL 2016 www.ti.com 10.2.1.2.7 Boost Converter Component Section The critical external components are summarized in Table 5. Table 5. Recommended Values PARAMETER TEST CONDITIONS Boost converter inductor MIN At 30% rated DC bias current of the inductor 1.5 Working capacitance biased at boost output voltage, if 4.7-µH inductor is chosen, then minimum capacitance is 10 µF 2.2 UNIT 4.7 µH 1 10 µF 4.7 22 µF Input capacitor Boost converter output capacitor TYP MAX 10.2.1.3 Application Curves For application curves, see the figures listed in Table 6. Table 6. Table of Graphs DESCRIPTION FIGURE NUMBER Output Power vs Supply Voltage Figure 1 THD+N vs Frequency Figure 5 THD+N vs Output Power Figure 7 Total Power Dissipation vs Output Power Figure 11 10.2.2 TPA2080D1 With Single-Ended Signals. 2.2uH Connected to Power Supply 2.2uF 10uF - 22uF VBAT Single-Ended Audio Inputs PVDD IN+ BGND TPA2080D1 INEnable SW OUT+ OUT- EN AGND PGND Figure 24. Typical Application Schematic With Single-Ended Input Signal 10.2.2.1 Design Requirements For this design example, use the parameters listed in Table 2. 10.2.2.2 Detailed Design Procedure For the design procedure see Detailed Design Procedure. 10.2.2.3 Application Curves For application curves, see the figures listed in Table 6. 18 Submit Documentation Feedback Copyright © 2012–2016, Texas Instruments Incorporated Product Folder Links: TPA2080D1 TPA2080D1 www.ti.com SLOS733B – JANUARY 2012 – REVISED APRIL 2016 11 Power Supply Recommendations The TPA2080D1 is designed to operate from an input voltage supply range from 2.5 V to 5.2 V. Therefore the output voltage range of the power supply should be within this range. The current capability of upper power must not exceed the maximum current limit of the power switch. 11.1 Power Supply Decoupling Capacitors The TPA2080D1 requires adequate power supply decoupling to ensure a high efficiency operation with low total harmonic distortion (THD). Place a low equivalent-series-resistance (ESR) ceramic capacitor, typically 0.1 µF, within 2 mm of the VBAT/PVDD pin. This choice of capacitor and placement helps with higher frequency transients, spikes, or digital hash on the line. In addition to the 0.1-μF ceramic capacitor, TI recommends placing a 2.2-µF to 10-µF capacitor on the VBAT supply trace. This larger capacitor acts as a charge reservoir, providing energy faster than the board supply, thus helping to prevent any droop in the supply voltage. 12 Layout 12.1 Layout Guidelines 12.1.1 Component Placement Place all the external components close to the TPA2080D1 device. Placing the decoupling capacitors as close as possible to the device is important for the efficiency of the class-D amplifier. Any resistance or inductance in the trace between the device and the capacitor can cause a loss in efficiency. 12.1.2 Thermal Considerations It is important to operate the TPA2080D1 at temperatures lower than its maximum operating temperature. The maximum ambient temperature depends on the heat-sinking ability of the PCB system. Given θJA of 97.3°C/W, the maximum allowable junction temperature of 150°C, and the internal dissipation of 0.5 W for 1.9-W, 8 Ω-load, 3.6-V supply, the maximum ambient temperature is calculated as: TA,MAX = TJ,MAX – θJAPD = 150°C – (97.3°C/W × 0.5 W) = 101.4°C (5) The calculated maximum ambient temperature is 101.4°C at maximum power dissipation at 3.6-V supply and 8-Ω load. The TPA2080D1 is designed with thermal protection that turns the device off when the junction temperature surpasses 150°C to prevent damage to the IC. 12.1.3 Pad Size TPA2080D1 has AGND, BGND and PGND for analog circuit, boost converter and Class-D amplifier respectively. These three ground pins should be connected together through a solid ground plane with multiple ground VIAs. In making the pad size for the WCSP balls, it is recommended that the layout use non-solder mask defined (NSMD) land. With this method, the solder mask opening is made larger than the desired land area, and the opening size is defined by the copper pad width. Figure 25 shows the appropriate diameters for a WCSP layout. Submit Documentation Feedback Copyright © 2012–2016, Texas Instruments Incorporated Product Folder Links: TPA2080D1 19 TPA2080D1 SLOS733B – JANUARY 2012 – REVISED APRIL 2016 www.ti.com Layout Guidelines (continued) Copper Trace Width Solder Pad Width Solder Mask Opening Copper Trace Thickness Solder Mask Thickness M0200-01 Figure 25. Land Pattern Dimensions Table 7. Land Pattern Dimensions (1) SOLDER PAD DEFINITIONS COPPER PAD Nonsolder mask defined (NSMD) 275 μm (+0.0, -25 μm) (1) (2) (3) (4) (5) (6) (7) 20 SOLDER MASK OPENING (5) 375 μm (+0.0, -25 μm) (2) (3) (4) COPPER THICKNESS STENCIL (6) (7) OPENING STENCIL THICKNESS 1 oz max (32 μm) 275 μm x 275 μm Sq. (rounded corners) 125 μm thick Circuit traces from NSMD defined PWB lands should be 75 μm to 100 μm wide in the exposed area inside the solder mask opening. Wider trace widths reduce device stand off and impact reliability. Best reliability results are achieved when the PWB laminate glass transition temperature is above the operating the range of the intended application. Recommend solder paste is Type 3 or Type 4. For a PWB using a Ni/Au surface finish, the gold thickness should be less 0.5 mm to avoid a reduction in thermal fatigue performance. Solder mask thickness should be less than 20 μm on top of the copper circuit pattern Best solder stencil performance is achieved using laser cut stencils with electro polishing. Use of chemically etched stencils results in inferior solder paste volume control. Trace routing away from WCSP device should be balanced in X and Y directions to avoid unintentional component movement due to solder wetting forces. Submit Documentation Feedback Copyright © 2012–2016, Texas Instruments Incorporated Product Folder Links: TPA2080D1 TPA2080D1 www.ti.com SLOS733B – JANUARY 2012 – REVISED APRIL 2016 12.2 Layout Example Decoupling capacitor placed as close as possible to the device 10µF-22uF 2.2µH 0.1µF A1 A2 A3 OUT+ B1 B2 B3 OUT- C1 C2 C3 D1 D2 D3 Decoupling capacitor and Input capacitors placed as close as possible to the device ININ+ Differential Routing of input and output signals is recommended EN Top Layer Ground Plane Top Layer Traces Pad to Top Layer Ground Plane Bottom Layer Traces Via to Bottom Ground Plane Via to Bottom Layer Via to Power Supply plane Figure 26. Layout Recommendation Submit Documentation Feedback Copyright © 2012–2016, Texas Instruments Incorporated Product Folder Links: TPA2080D1 21 TPA2080D1 SLOS733B – JANUARY 2012 – REVISED APRIL 2016 www.ti.com 13 Device and Documentation Support 13.1 Device Support 13.1.1 Third-Party Products Disclaimer TI'S PUBLICATION OF INFORMATION REGARDING THIRD-PARTY PRODUCTS OR SERVICES DOES NOT CONSTITUTE AN ENDORSEMENT REGARDING THE SUITABILITY OF SUCH PRODUCTS OR SERVICES OR A WARRANTY, REPRESENTATION OR ENDORSEMENT OF SUCH PRODUCTS OR SERVICES, EITHER ALONE OR IN COMBINATION WITH ANY TI PRODUCT OR SERVICE. 13.1.2 Device Nomenclature 13.1.2.1 Boost Terms The following is a list of terms and definitions used in the boost equations found in this document. C Minimum boost capacitance required for a given ripple voltage on PVDD. L Boost inductor fBOOST Switching frequency of the boost converter. IPVDD Current pulled by the Class-D amplifier from the boost converter. IL Average current through the boost inductor. PVDD Supply voltage for the Class-D amplifier. (Voltage generated by the boost converter output) VBAT Supply voltage to the IC. ΔIL Ripple current through the inductor. ΔV Ripple voltage on PVDD. 13.2 Community Resources The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers. Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support. 13.3 Trademarks E2E is a trademark of Texas Instruments. All other trademarks are the property of their respective owners. 13.4 Electrostatic Discharge Caution These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 13.5 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. 22 Submit Documentation Feedback Copyright © 2012–2016, Texas Instruments Incorporated Product Folder Links: TPA2080D1 TPA2080D1 www.ti.com SLOS733B – JANUARY 2012 – REVISED APRIL 2016 14 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. 14.1 Package Dimensions The TPA2080D1 uses a 12-ball, 0.5-mm pitch WCSP package. The die length (D) and width (E) correspond to the package mechanical drawing at the end of the datasheet. Table 8. TPA2080D1 YZG Package Dimensions DIMENSION D E Max 2012 µm 1560 µm Typ 1982 µm 1530 µm Min 1952 µm 1500 µm Submit Documentation Feedback Copyright © 2012–2016, Texas Instruments Incorporated Product Folder Links: TPA2080D1 23 PACKAGE OPTION ADDENDUM www.ti.com 10-Dec-2020 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) TPA2080D1YZGR ACTIVE DSBGA YZG 12 3000 RoHS & Green SNAGCU Level-1-260C-UNLIM -40 to 85 TPA2080D1 TPA2080D1YZGT ACTIVE DSBGA YZG 12 250 RoHS & Green SNAGCU Level-1-260C-UNLIM -40 to 85 TPA2080D1 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of