TPD1E1B04DPYT

Product Folder Sample & Buy Support & Community Tools & Software Technical Documents TPD1E1B04 ZHCSF88A – MAY 2016 – REVISED JULY 2016 TPD1E1B04 具有低 RDYN 和低钳位电压的单通道 ESD 保护二极管 • • • • • • • • IEC 61000-4-2 4 级静电放电 (ESD) 保护 – ±30kV 接触放电 – ±30kV 气隙放电 IEC 61000-4-4 瞬态放电 (EFT) 保护 – 80A (5/50ns) IEC 61000-4-5 浪涌保护 – 6.3A (8/20µs) IO 电容值：1pF（典型值） 直流击穿电压：6.4V（典型值） 低泄漏电流：100nA（最大值） 极低 ESD 钳位电压 – 8.5V（±16A TLP 时） – RDYN：0.15Ω 工业温度范围：-40°C 至 +125°C 行业标准的 0402 封装 TPD1E1B04 是一款双向 TVS ESD 保护二极管，特有 低 RDYN 和低钳位电压。TPD1E1B04 的额定 ESD 冲 击消散值等于 IEC 61000-4-2（4 级）国际标准中规定 的最高水平。 超低动态电阻 (0.15Ω) 和极低钳位电压（16A TLP 时 为 8.5V）可针对瞬变事件提供系统级保护。该器件 特 有 一个 1pF IO 电容，非常适合用于保护 USB 2.0 等 接口。 TPD1E1B04 采用符合行业标准的 0402 (DPY) 封装。 器件信息(1) 器件型号 • 终端设备 – 可穿戴产品 – 便携式计算机和台式机 – 手机和平板电脑 – 机顶盒 – 数字视频录像机 (DVR) 和网络视频录像机 (NVR) – 电视和监视器 – EPOS（电子销售终端） 接口 – USB 2.0/1.1 – 通用输入/输出 (GPIO) – 按钮 – 音频 X1SON (2) 封装尺寸（标称值） 0.60mm x 1.00mm (1) 要了解所有可用封装，请参见数据表末尾的可订购产品附录。 典型的 USB 2.0 应用原理图 2 应用 • 封装 TPD1E1B04 5-V Source VBUS DD+ GND 1 2 TPD1E1B04 • 1 3 说明 TPD1E1B04 1 特性 1 USB Transceiver 2 Copyright © 2016, Texas Instruments Incorporated 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. English Data Sheet: SLVSDL0 TPD1E1B04 ZHCSF88A – MAY 2016 – REVISED JULY 2016 www.ti.com.cn 目录 1 2 3 4 5 6 7 特性 .......................................................................... 应用 .......................................................................... 说明 .......................................................................... 修订历史记录 ........................................................... Pin Configuration and Functions ......................... Specifications......................................................... 1 1 1 2 3 4 6.1 6.2 6.3 6.4 6.5 6.6 6.7 4 4 4 4 4 5 6 Absolute Maximum Ratings ...................................... ESD Ratings.............................................................. ESD Ratings—IEC Specification .............................. Recommended Operating Conditions....................... Thermal Information .................................................. Electrical Characteristics........................................... Typical Characteristics .............................................. Detailed Description .............................................. 8 7.1 Overview ................................................................... 8 7.2 Functional Block Diagram ......................................... 8 7.3 Feature Description................................................... 8 7.4 Device Functional Modes.......................................... 9 8 Application and Implementation ........................ 10 8.1 Application Information............................................ 10 8.2 Typical Application ................................................. 10 9 Power Supply Recommendations...................... 12 10 Layout................................................................... 12 10.1 Layout Guidelines ................................................. 12 10.2 Layout Example .................................................... 12 11 器件和文档支持 ..................................................... 13 11.1 11.2 11.3 11.4 11.5 11.6 文档支持................................................................ 接收文档更新通知 ................................................. 社区资源................................................................ 商标 ....................................................................... 静电放电警告......................................................... Glossary ................................................................ 13 13 13 13 13 13 12 机械、封装和可订购信息 ....................................... 13 4 修订历史记录 注：之前版本的页码可能与当前版本有所不同。 Changes from Original (May 2016) to Revision A Page • 已将器件状态从产品预览更改为量产数据 .............................................................................................................................. 1 2 Copyright © 2016, Texas Instruments Incorporated TPD1E1B04 www.ti.com.cn ZHCSF88A – MAY 2016 – REVISED JULY 2016 5 Pin Configuration and Functions DPY Package 2-Pin X1SON Top View 1 2 Pin Functions PIN NO. NAME I/O DESCRIPTION 1 IO I/O ESD Protected Channel. If used as ESD IO, connect pin 2 to ground 2 IO I/O ESD Protected Channel. If used as ESD IO, connect pin 1 to ground Copyright © 2016, Texas Instruments Incorporated 3 TPD1E1B04 ZHCSF88A – MAY 2016 – REVISED JULY 2016 www.ti.com.cn 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN Electrical fast transient Peak pulse MAX UNIT 80 A IEC 61000-4-5 Power (tp - 8/20 µs) 50 W IEC 61000-4-5 Current (tp - 8/20 µs) 6.3 A IEC 61000-4-4 (5/50 ns) TA Operating free-air temperature –40 125 °C Tstg Storage temperature –65 155 °C (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 6.2 ESD Ratings VALUE V(ESD) (1) (2) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) UNIT ±4000 Charged-device model (CDM), per JEDEC specification JESD22-C101 (2) V ±1500 JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.3 ESD Ratings—IEC Specification VALUE V(ESD) Electrostatic discharge IEC 61000-4-2 contact discharge ±30000 IEC 61000-4-2 air-gap discharge ±30000 UNIT V 6.4 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN MAX VIO Input pin voltage –3.6 3.6 UNIT V TA Operating free-air temperature –40 125 °C 6.5 Thermal Information TPD1E1B04 THERMAL METRIC (1) DPY (X1SON) UNIT 2 PINS RθJA Junction-to-ambient thermal resistance 420 °C/W RθJC(top) Junction-to-case (top) thermal resistance 169.3 °C/W RθJB Junction-to-board thermal resistance 276.1 °C/W ψJT Junction-to-top characterization parameter 122.1 °C/W ψJB Junction-to-board characterization parameter 157.3 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance N/A °C/W (1) 4 For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. Copyright © 2016, Texas Instruments Incorporated TPD1E1B04 www.ti.com.cn ZHCSF88A – MAY 2016 – REVISED JULY 2016 6.6 Electrical Characteristics over operating free-air temperature range (unless otherwise noted) PARAMETER VRWM TEST CONDITIONS MIN TYP IIO < 100 nA VBRF Breakdown voltage, any IO pin to GND Measured as the maximum voltage before device snaps back into VHOLD voltage 6.4 V VBRR Breakdown voltage, GND to any IO pin Measured as the maximum voltage before device snaps back into VHOLD voltage –6.4 V VHOLD Holding voltage IIO = 1 mA, TA = 25°C ILEAK Clamping voltage Leakage current, IO to GND RDYN Dynamic resistance CL Line capacitance Copyright © 2016, Texas Instruments Incorporated 5 3.6 UNIT Reverse stand-off voltage VCLAMP –3.6 MAX 6 IPP = 1 A, TLP, from IO to GND 6.3 IPP = 5 A, TLP, from IO to GND 6.8 IPP = 16 A, TLP, from IO to GND 8.5 IPP = 1 A, TLP, from GND to IO 6.3 IPP = 5 A, TLP, from GND to IO 6.8 IPP = 16 A, TLP, from GND to IO 8.5 VIO = ±2.5 V 0.2 IO to GND 0.15 GND to IO 0.15 VIO = 0 V, f = 1 MHz, IO to GND, TA = 25°C 1 6.6 V V V 100 nA Ω 1.3 pF 5 TPD1E1B04 ZHCSF88A – MAY 2016 – REVISED JULY 2016 www.ti.com.cn 30 30 25 25 20 20 Current (A) Current (A) 6.7 Typical Characteristics 15 10 15 10 5 5 0 0 -5 -5 0 1 2 3 4 5 6 7 Voltage (V) 8 9 10 11 12 0 1 2 3 70 10 60 0 50 -10 40 -20 30 20 0 -60 20 30 40 50 Time (ns) 60 70 80 -70 -10 90 0 10 D003 Figure 3. 8-kV IEC Waveform 5 40 4 32 3 24 2 16 1 8 0 5 12 D002 20 30 40 50 Time (ns) 60 70 80 90 D004 -40qC 25qC 85qC 125qC 2.8 2.4 0 10 15 20 25 30 35 40 45 50 55 Time (Ps) D001 Figure 5. Surge Curve (tp = 8/20 µs), Any IO Pin to GND 6 11 3.2 Capacitance (pF) 6 56 Current Power 48 0 -10 -5 10 Figure 4. –8-kV IEC Waveform Power (W) Current (A) 7 9 -40 -50 10 8 -30 10 0 5 6 7 Voltage (V) Figure 2. Negative TLP Curve Voltage (V) Voltage (V) Figure 1. Positive TLP Curve -10 -10 4 D001 2 1.6 1.2 0.8 0.4 0 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 Bias Voltage (V) 3 3.3 3.6 D006 Figure 6. Capacitance vs. Bias Voltage Copyright © 2016, Texas Instruments Incorporated TPD1E1B04 www.ti.com.cn ZHCSF88A – MAY 2016 – REVISED JULY 2016 2000 1 1800 0.8 1600 0.6 1400 0.4 Current (mA) Leakage Current (pA) Typical Characteristics (continued) 1200 1000 800 0.2 0 -0.2 600 -0.4 400 -0.6 200 -0.8 0 -40 -1 -25 -10 5 20 35 50 65 Temperature (qC) 80 95 110 125 -7 -6 2 0 1.8 -1 1.6 -2 1.4 1.2 1 0.8 0.6 Copyright © 2016, Texas Instruments Incorporated 2 3 4 5 6 7 D008 -6 -8 Figure 9. Capacitance vs. Frequency -1 0 1 Voltage (V) -5 0.2 8.5E+9 -2 -4 -7 4E+9 5.5E+9 7E+9 Frequency (Hz) -3 -3 0.4 2.5E+9 -4 Figure 8. DC Voltage Sweep I-V Curve Insertion Loss (dB) Capacitance (pF) Figure 7. Leakage Current vs. Temperature 0 1E+9 -5 D007 1E+10 D009 -9 1000000 1E+7 1E+8 Frequency (Hz) 1E+9 1E+10 D010 Figure 10. Insertion Loss 7 TPD1E1B04 ZHCSF88A – MAY 2016 – REVISED JULY 2016 www.ti.com.cn 7 Detailed Description 7.1 Overview The TPD1E1B04 is a bidirectional ESD Protection Diode with ultra-low clamping voltage. This device can dissipate ESD strikes above the maximum level specified by the IEC 61000-4-2 International Standard. The ultralow clamping makes this device ideal for protecting any sensitive signal pins. 7.2 Functional Block Diagram IO GND Copyright © 2016, Texas Instruments Incorporated 7.3 Feature Description 7.3.1 IEC 61000-4-2 ESD Protection The I/O pins can withstand ESD events up to ±30-kV contact and ±30-kV air gap. An ESD-surge clamp diverts the current to ground. 7.3.2 IEC 61000-4-4 EFT Protection The I/O pins can withstand an electrical fast transient burst of up to 80 A (5/50 ns waveform, 4 kV with 50-Ω impedance). An ESD-surge clamp diverts the current to ground. 7.3.3 IEC 61000-4-5 Surge Protection The I/O pins can withstand surge events up to 6.3 A and 50 W (8/20 µs waveform). An ESD-surge clamp diverts this current to ground. 7.3.4 IO Capacitance The capacitance between each I/O pin to ground is 1 pF (typical) and 1.3 pF (maximum). 7.3.5 DC Breakdown Voltage The DC breakdown voltage of each I/O pin is ±6.4 V typical. This ensures that sensitive equipment is protected from surges above the reverse standoff voltage of ±3.6 V. 7.3.6 Low Leakage Current The I/O pins feature an low leakage current of 100 nA (maximum) with a bias of ±2.5 V. 7.3.7 Extremely Low ESD Clamping Voltage The I/O pins feature an ESD clamp that is capable of clamping the voltage to 8.5 V (IPP = 16 A). 7.3.8 Industrial Temperature Range This device features an industrial operating range of –40°C to +125°C. 7.3.9 Industry Standard Footprint The layout of this device makes it simple and easy to add protection to an existing layout. The packages offers flow-through routing, requiring minimal modification to an existing layout. 8 Copyright © 2016, Texas Instruments Incorporated TPD1E1B04 www.ti.com.cn ZHCSF88A – MAY 2016 – REVISED JULY 2016 7.4 Device Functional Modes The TPD1E1B04 is a passive integrated circuit that triggers when voltages are above VBRF or below VBRR. During ESD events, voltages as high as ±30 kV (contact or air) can be directed to ground via the internal diode network. When the voltages on the protected line fall below the trigger levels of TPD1E1B04 (usually within 10s of nanoseconds) the device reverts to passive. Copyright © 2016, Texas Instruments Incorporated 9 TPD1E1B04 ZHCSF88A – MAY 2016 – REVISED JULY 2016 www.ti.com.cn 8 Application and Implementation NOTE Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality. 8.1 Application Information The TPD1E1B04 is a diode type TVS which is used to provide a path to ground for dissipating ESD events on high-speed signal lines between a human interface connector and a system. As the current from ESD passes through the TVS, only a small voltage drop is present across the diode. This is the voltage presented to the protected IC. The low RDYN of the triggered TVS holds this voltage, VCLAMP, to a safe level for the protected IC. 8.2 Typical Application 5-V Source VBUS D- 1 2 TPD1E1B04 GND TPD1E1B04 D+ USB Transceiver 1 2 Copyright © 2016, Texas Instruments Incorporated Figure 11. USB 2.0 ESD Schematic 8.2.1 Design Requirements For this design example, two TPD1E1B04 devices are being used in a USB 2.0 application. This provides a complete ESD protection scheme. Given the USB 2.0 application, the parameters listed in Table 1 are known. Table 1. Design Parameters DESIGN PARAMETER VALUE Signal range on DP-DM lines 0 V to 3.6 V Operating frequency on DP-DM lines up to 240 MHz 8.2.2 Detailed Design Procedure 8.2.2.1 Signal Range The TPD1E1B04 supports signal ranges between –3.6 V and 3.6 V, which supports the USB 2.0 signal pair on the USB 2.0 application. 10 Copyright © 2016, Texas Instruments Incorporated TPD1E1B04 www.ti.com.cn ZHCSF88A – MAY 2016 – REVISED JULY 2016 8.2.2.2 Operating Frequency The TPD1E1B04 has a 1-pF (typical) capacitance, which supports the USB 2.0 data rates of 480 Mbps. 8.2.3 Application Curve 0 -1 Insertion Loss (dB) -2 -3 -4 -5 -6 -7 -8 -9 1000000 1E+7 1E+8 Frequency (Hz) 1E+9 1E+10 D010 Figure 12. Insertion Loss Copyright © 2016, Texas Instruments Incorporated 11 TPD1E1B04 ZHCSF88A – MAY 2016 – REVISED JULY 2016 www.ti.com.cn 9 Power Supply Recommendations The TPD1E1B04 is a passive ESD device so there is no need to power it. Take care not to violate the recommended I/O specification (–3.6 V to 3.6 V) to ensure the device functions properly. 10 Layout 10.1 Layout Guidelines • • • The optimum placement is as close to the connector as possible. – EMI during an ESD event can couple from the trace being struck to other nearby unprotected traces, resulting in early system failures. – The PCB designer must minimize the possibility of EMI coupling by keeping any unprotected traces away from the protected traces which are between the TVS and the connector. Route the protected traces as straight as possible. Eliminate any sharp corners on the protected traces between the TVS and the connector by using rounded corners with the largest radii possible. – Electric fields tend to build up on corners, increasing EMI coupling. 10.2 Layout Example VBUS To power supply TPD1E1B04 D- To USB transceiver D+ TPD1E1B04 Legend GND Pin to GND USB2.0 Connector Figure 13. USB 2.0 ESD Layout 12 版权 © 2016, Texas Instruments Incorporated TPD1E1B04 www.ti.com.cn ZHCSF88A – MAY 2016 – REVISED JULY 2016 11 器件和文档支持 11.1 文档支持 11.1.1 相关文档　 相关文档请参见以下部分： 《TPD1E1B04 评估模块》，SLVUAN7 11.2 接收文档更新通知 如需接收文档更新通知，请访问 ti.com 上的器件产品文件夹。点击右上角的提醒我 (Alert me) 注册后，即可每周定 期收到已更改的产品信息。有关更改的详细信息，请查阅已修订文档中包含的修订历史记录。 11.3 社区资源 The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers. Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support. 11.4 商标 E2E is a trademark of Texas Instruments. All other trademarks are the property of their respective owners. 11.5 静电放电警告 ESD 可能会损坏该集成电路。德州仪器 (TI) 建议通过适当的预防措施处理所有集成电路。如果不遵守正确的处理措施和安装程序 , 可 能会损坏集成电路。 ESD 的损坏小至导致微小的性能降级 , 大至整个器件故障。 精密的集成电路可能更容易受到损坏 , 这是因为非常细微的参数更改都可 能会导致器件与其发布的规格不相符。 11.6 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. 12 机械、封装和可订购信息 以下页中包括机械、封装和可订购信息。这些信息是针对指定器件可提供的最新数据。这些数据会在无通知且不对 本文档进行修订的情况下发生改变。欲获得该数据表的浏览器版本，请查阅左侧的导航栏。 版权 © 2016, Texas Instruments Incorporated 13 PACKAGE OPTION ADDENDUM www.ti.com 1-Jul-2023 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) Samples (4/5) (6) TPD1E1B04DPYR ACTIVE X1SON DPY 2 10000 RoHS & Green NIPDAU | NIPDAUAG Level-1-260C-UNLIM -40 to 125 (4X, A5) Samples TPD1E1B04DPYT ACTIVE X1SON DPY 2 250 RoHS & Green NIPDAU | NIPDAUAG Level-1-260C-UNLIM -40 to 125 4X Samples (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of