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TPD2S703-Q1
SLLSEU8B – MARCH 2017 – REVISED MAY 2020
TPD2S703-Q1 Automotive USB 2-Channel Data Line Short-to-Battery, Short-to-VBUS, and
IEC ESD Protection
1 Features
3 Description
•
The TPD2S703-Q1 is a 2-Channel Data Line Shortto-Battery, Short-to-VBUS, and IEC61000-4-2 ESD
protection device for automotive high-speed
interfaces like USB 2.0. The TPD2S703-Q1 contains
two data line nFET switches which ensure safe data
communication by providing best in class bandwidth
for minimal signal degradation while simultaneously
protecting the internal system circuits from any
overvoltage conditions at the VD+ and VD– pins. On
these pins, this device can handle overvoltage
protection up to 18-V DC. This provides sufficient
protection for shorting the data lines to the car battery
as well as the USB VBUS rail. The overvoltage
protection circuit provides the most reliable short-tobattery isolation in the industry, shutting off the data
switches in 200 ns and protecting the upstream
circuitry from harmful voltage and current spikes.
1
•
•
•
•
•
•
•
•
•
AEC-Q100 Qualified
– –40°C to +125°C Operating temperature range
Short-to-battery (up to 18 V) and short-to-VBUS
protection on VD+, VD–
ESD Performance VD+, VD–
– ±8-kV Contact discharge (IEC 61000-4-2 and
ISO 10605 330 pF, 330 Ω)
– ±15-kV Air-gap discharge (IEC 61000-4-2 and
ISO 10605 330 pF, 330 Ω)
High speed data switches (1-GHz bandwidth)
Only requires 5-V power supply
Adjustable OVP threshold
Fast Overvoltage response time (200 ns typical)
Thermal shutdown feature
Integrated input enable and fault output signal
Flow-through routing for data Integrity
– 10-pin VSSOP package (3 mm × 3 mm)
– 10-pin WSON package (2.5 mm × 2.5 mm)
2 Applications
•
•
End Equipment
– Head unit
– Rear seat entertainment
– Telematics
– USB hubs
– Navigation modules
– Media interface
Interfaces
– USB 2.0
– USB 3.0
Additionally, the TPD2S703-Q1 only requires a single
power supply of 5 V in order to optimize power tree
size and cost. The OVP threshold and clamping
circuit can be adjusted by a resistor divider network to
provide a simple, cost effective way to optimize
system protection for any transceiver. The
TPD2S703-Q1 also includes a FLT pin which
provides an indication when the device sees an
overvoltage condition and automatically resets when
the overvoltage condition is removed.
The TPD2S703-Q1 also integrates system level IEC
61000-4-2 and ISO 10605 ESD clamps on the VD+
and VD– pins, thus eliminating the need for external
high voltage, low capacitance TVS clamp circuits in
the application.
Device Information(1)
PART NUMBER
TPD2S703-Q1
PACKAGE
BODY SIZE (NOM)
VSSOP (10)
3.00 mm × 3.00 mm
WSON (10)
2.50 mm × 2.50 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
USB 2.0 Port With Short-to-Battery and IEC ESD Protection
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TPD2S703-Q1
SLLSEU8B – MARCH 2017 – REVISED MAY 2020
www.ti.com
Table of Contents
1
2
3
4
5
6
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
6.1
6.2
6.3
6.4
6.5
6.6
6.7
6.8
Absolute Maximum Ratings ...................................... 4
ESD Ratings—AEC Specification ............................. 4
ESD Ratings—IEC Specification .............................. 4
ESD Ratings—ISO Specification .............................. 4
Recommended Operating Conditions....................... 5
Thermal Information .................................................. 5
Electrical Characteristics........................................... 6
Power Supply and Supply Current Consumption
Chracteristics ............................................................. 8
6.9 Timing Requirements ................................................ 8
6.10 Typical Characteristics .......................................... 11
7
8
Parameter Measurement Information ................ 14
Detailed Description ............................................ 15
8.1 Overview ................................................................. 15
8.2 Functional Block Diagram ....................................... 15
8.3 Feature Description................................................. 16
8.4 Device Functional Modes........................................ 17
9
Application and Implementation ........................ 18
9.1 Application Information............................................ 18
9.2 Typical Application ................................................. 18
10 Power Supply Recommendations ..................... 21
10.1 VPWR Path ............................................................. 21
10.2 VREF Pin ................................................................ 21
11 Layout................................................................... 22
11.1 Layout Guidelines ................................................. 22
11.2 Layout Example .................................................... 22
12 Device and Documentation Support ................. 23
12.1
12.2
12.3
12.4
12.5
12.6
Documentation Support ........................................
Receiving Notification of Documentation Updates
Support Resources ...............................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
23
23
23
23
23
23
13 Mechanical, Packaging, and Orderable
Information ........................................................... 24
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision A (May 2017) to Revision B
Page
•
Changed Figure USB 2.0 Port With Short-to-Battery and IEC ESD Protection image object for clarity ............................... 1
•
Corrected cross reference hyperlink at the ESD Ratings tables ........................................................................................... 4
•
Changed Figure 23 image object for clarity.......................................................................................................................... 18
•
Added section Common choke and Inductor for VD+ and VD- for clarity............................................................................ 19
Changes from Original (March 2017) to Revision A
•
2
Page
Updated description from enable to FLT in Recommended Operating Conditions table....................................................... 5
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SLLSEU8B – MARCH 2017 – REVISED MAY 2020
5 Pin Configuration and Functions
DGS Package
10-Pin SSOP
Top View
DSK Package
10-Pin WSON
Top View
VD-
1
10
D-
VD-
1
10
D-
VD+
2
9
D+
VD+
2
9
D+
GND
3
8
VREF
GND
4
7
VPWR
FLT
3 Thermal 8
Pad
4
7
VREF
FLT
EN
5
6
MODE
EN
5
MODE
6
VPWR
Pin Functions
PIN
NO.
NAME
TYPE
DESCRIPTION
1
VD–
I/O
High voltage D– USB data line, connect to USB connector D+, D– IEC61000-4-2 ESD
protection
2
VD+
I/O
High voltage D+ USB data line, connect to USB connector D+, D– IEC61000-4-2 ESD
protection
3
GND
Ground
4
FLT
O
Open-drain fault pin. See Table 1
5
EN
I
Enable active-low input. Drive EN low to enable the switches. Drive EN high to disable the
switches. See Table 1 for mode selection
6
MODE
I
Selects between device modes. See the Detailed Description section. Acts as LDO reference
voltage for mode 1
7
VPWR
I
5-V DC supply input for internal circuits. Connect to internal power rail on PCB
8
VREF
I/O
Pin to set OVP threshold. See the Detailed Description section for instructions on how to set
OVP threshold
9
D+
I/O
I/O protected low voltage D+ USB data line, connects to transceiver
10
D–
I/O
Protected low voltage D– USB data line, connects to transceiver
Ground pin for internal circuits and IEC ESD clamps
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SLLSEU8B – MARCH 2017 – REVISED MAY 2020
www.ti.com
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1) (2)
MIN
MAX
UNIT
VPWR
5-V DC supply voltage for internal circuitry
–0.3
7.7
V
VREF
Pin to set OVP threshold
–0.3
6
V
VD+,
VD–
Voltage range from connector-side USB data lines
–0.3
18
V
D+, D–
Voltage range for internal USB data lines
–0.3
VREF + 0.3
V
VMODE
Voltage on MODE pin
–0.3
7.7
V
VFLT
Voltage on FLT pin
–0.3
7.7
V
VEN
Voltage on enable pin
–0.3
7.7
V
TA
Operating free air temperature (3)
–40
125
°C
TSTG
Storage temperature
–65
150
°C
(1)
(2)
(3)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.
Thermal limits and power dissipation limits must be observed.
6.2 ESD Ratings—AEC Specification
VALUE
Human-body model (HBM), per AEC Q100-002
V(ESD)
(1)
Electrostatic discharge
(1)
All pins
All pins besides
Charged-device model (CDM), per AEC Q100-011 corners
Corner pins
UNIT
±2000
±500
V
±750
AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
6.3 ESD Ratings—IEC Specification
VALUE
V(ESD)
(1)
Electrostatic discharge
IEC 61000-4-2 contact discharge
VD+, VD– pins (1)
±8000
IEC 61000-4-2 air-gap discharge
VD+, VD– pins (1)
±15000
UNIT
V
See Figure 20 for details on system level ESD testing setup.
6.4 ESD Ratings—ISO Specification
VALUE
VESD
(1)
(2)
4
(1)
Electrostatic discharge
ISO 10605 (330 pF, 330 Ω) contact discharge
(10 strikes)
VD+, VD– pins
±8000
ISO 10605 (330 pF, 330 Ω) air-gap discharge
(10 strikes)
VD+, VD– pins
±15000
ISO 10605 (150 pF, 330 Ω) contact discharge
(10 strikes)
VD+, VD– pins
±8000
ISO 10605 (150 pF, 330 Ω) air-gap discharge
(10 strikes)
VD+, VD– pins
±15000
ISO 10605 (330 pF, 2 kΩ) contact discharge (10
stikes) (2)
VD+, VD– pins
±8000
ISO 10605 (330 pF, 2 kΩ) air-gap discharge (10
strikes)
VD+, VD– pins
±15000
ISO 10605 (150 pF, 2 kΩ) air-gap discharge (10
discharges)
VD+, VD– pins
±25000
UNIT
V
See Figure 20 for details on system level ESD testing setup.
VREF > 3 V.
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SLLSEU8B – MARCH 2017 – REVISED MAY 2020
6.5 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
TYP
MAX
UNIT
VPWR
5-V DC supply voltage for internal circuitry
4.5
7
V
VREF
Mode 0. Voltage range for VREF pin (for setting OVP threshold)
3
3.6
V
VREF
Mode 1. Voltage range for VREF pin (for setting OVP threshold)
0.63
3.8
V
VD+, VD–
Voltage range from connector-side USB data lines
0
3.6
V
D+, D–
Voltage range for internal USB data lines
0
3.6
V
VEN
Voltage range for enable
0
7
V
VFLT
Voltage range for FLT
0
7
V
IFLT
Current into open drain FLT pin FET
0
3
mA
CVPWR
VPWR capacitance (1)
VPWR pin
1
10
CVREF
VREF capacitance
VREF pin
0.3
1
3
CMODE
Allowed parasitic capacitance on mode pin from PCB and mode 1 external resistors
20
pF
RMODE_0
Resistance to GND to set to mode 0
2
2.6
kΩ
RMODE_1
Resistance to GND to set to mode 1 (calculate parallel combination of RTOP and
RBOT)
(1)
14
µF
20
µF
kΩ
For recommended values for capacitors and resistors, the typical values assume a component placed on the board near the pin.
Minimum and maximum values listed are inclusive of manufacturing tolerances, voltage derating, board capacitance, and temperature
variation. The effective value presented should be within the minimum and maximums listed in the table.
6.6 Thermal Information
TPD2S703-Q1
THERMAL METRIC (1)
DGS (VSSOP)
DSK (WSON)
UNIT
10 PINS
10 PINS
θJA
Junction-to-ambient thermal resistance
167.3
61.5
°C/W
θJCtop
Junction-to-case (top) thermal resistance
56.9
51.3
°C/W
θJB
Junction-to-board thermal resistance
87.6
34
°C/W
ψJT
Junction-to-top characterization parameter
7.7
1.3
°C/W
ψJB
Junction-to-board characterization parameter
86.2
34.3
°C/W
θJCbot
Junction-to-case (bottom) thermal resistance
N/A
7.7
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
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6.7 Electrical Characteristics
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
0.47
0.5
0.53
V
50
200
nA
MODE 1 ADJUSTABLE VREF
VMODE_CMP
Mode 1 VREF feedback
regulator voltage
VMODE
Standard mode 1 set-up. EN = 0 V. Once
VREF = 3.3 V, measure voltage on mode pin
IMODE_LEAK
Mode pin mode 1 leakage
current
IMODE
Standard mode 1. Remove RTOP and RBOT.
Power up device and wait until start-up time has
passed. Then force 0.53 V on the MODE pin
and measure current into pin
VREF_ACCURACY
VREF accuracy
VREF
Informative, test parameters below; accuracy
with RTOP and RBOT as ±1% resistors
–8%
VREF_3.3V
Mode 1 VREF set to 3.3 V
VREF
Standard mode 1 set-up. RTOP = 140 kΩ ± 1%,
RBOT = 24.9 kΩ ± 1%. EN = 0. Measure value
of VREF once it settles
3.04
3.31
3.58
V
VREF_0.66V
Mode 1 VREF set to 0.66 V
VREF
Standard mode 1 set-up. RTOP = 47.5 kΩ ± 1%,
RBOT = 150 kΩ ± 1%.EN = 0. Measure value of
VREF once it settles
0.6
0.66
0.72
V
VREF_3.8V
Mode 1 VREF set to 3.8 V
VREF
Standard mode 1 set-up. RTOP = 165 kΩ ± 1%,
RBOT = 24.9 kΩ ± 1%. EN = 0. Measure value
of VREF once it settles
3.5
3.81
4.12
V
Mode 0. Connect VPWR = 5 V; VREF = 3.3 V;
VD+ = 3.3 V; Set VIH(EN) = 0 V; Sweep VIH
from 0 V to 1.4 V; Measure when D+ drops low
(less than or equal to 5% of 3.3 V) from 3.3 V
1.2
8%
EN, FLT PINS
High-level input voltage
VIH
EN
Low-level input voltage
V
Mode 0. Connect VPWR = 5 V; VREF = 3.3 V;
VD+ = 3.3 V. Set VIH(EN) = 3.3 V; Sweep VIH
from 3.3 V to 0.5 V; Measure when D+ rise to
95% of 3.3 V from 0 V
0.8
1
IIL
Input leakage current
EN
Mode 0. VPWR = 5 V; VREF = 3.3 V; VI (EN) =
3.3 V ; Measure current into EN pin
VOL
Low-level output voltage
FLT
Mode 0. Drive the TPS2S703-Q1 in OVP to
assert FLT pin. Source IOL = 1 mA into FLT pin
and measure voltage on FLT pin when asserted
TSD_RISING
The rising over-temperature
protection shutdown threshold
VPWR = 5 V, ENZ = 0 V, TA stepped up until
FLTZ is asserted
140
150
165
℃
TSD_FALLING
The falling over-temperature
protection shutdown threshold
VPWR = 5 V, ENZ = 0 V, TA stepped down
from TSD_RISING until FLTZ is cleared
125
138
150
℃
TSD_HYST
The over-temperature
protection shutdown threshold
hysteresis
TSD_RISING – TSD_FALLING
10
12
15
℃
VD±
Mode 1. Set VPWR = 5 V; EN = 0 V; RTOP = 165
kΩ, RBOT = 24.9 kΩ. Connect D± to 40-Ω load.
Increase VD+ or VD– from 4.1 V to 4.9 V.
Measure the value at which FLTZ is asserted
4.3
4.5
4.7
V
1.19
×
VREF
1.25
×
VREF
1.31 ×
VREF
V
µA
V
0.4
OVP CIRCUIT—VD±
VOVP_RISING
Input overvoltage protection
threshold, VREF > 3.6 V
VOVP_RISING
Input overvoltage protection
threshold
VD±
Mode 1. Set VPWR = 5 V; EN = 0 V; RTOP = 140
kΩ, RBOT = 24.9 kΩ. Increase VD+ or VD– from
3.6 V to 4.6 V. Measure the value at which
FLTZ is asserted. Repeat for RTOP = 39 kΩ,
RBOT = 150 kΩ. Increase VD+ or VD– from 0.6
V to 0.9 V. Measure the value at which FLTZ is
asserted. See the resultant values meet the
equation, and make sure to observe data
switches turnoff.
Also check for mode 0 when VREF = 3.3 V
VHYS_OVP
Hysteresis on OVP
VD±
Difference between rising and falling OVP
thresholds on VD±
VD±
After collecting each rising OVP threshold,
lower the VD± voltage until you see FLT
deassert. This gives the falling OVP threshold.
Use this value to calculate VHYS_OVP
VOVP_FALLING
Input overvoltage protection
threshold
IVD_LEAK_0
Leakage current on VD±
during normal operation
6
V
VD±
Standard mode 0 or mode 1. Set VD± = 0 V. D±
= floating. Measure current flowing into VD±
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25
mV
VOV
P_RI
SING
–
VHYS
_OVP
–0.1
V
0.1
µA
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Electrical Characteristics (continued)
over operating free-air temperature range (unless otherwise noted)
PARAMETER
IVD_LEAK_3.6V
Leakage current on VD±
during normal operation
VOVP_3.3V
Input overvoltage threshold
for VREF = 3.3 V
VOVP_0.66V
Input overvoltage threshold
for VREF = 0.66 V
TEST CONDITIONS
MIN
VD±
Standard mode 0 or mode 1. Set VD± = 3.6 V.
D± = floating. Measure current flowing into VD±
VD±
Standard mode 1. RTOP = 140 kΩ ± 1%, RBOT =
24.9 kΩ ± 1%. Connect D± to 40-Ω load.
Measure the value at which FLTZ is asserted
Standard mode 1. RTOP = 47.5 kΩ ± 1%, RBOT =
150 kΩ ± 1%. Connect D± to 40-Ω load.
Measure the value at which FLTZ is asserted
VD±
TYP
MAX
2.5
4
3.61
4.14
4.67
0.72
0.83
0.94
UNIT
µA
V
V
SHORT-TO-BATTERY
VDATA_STB
Data line hotplug short-tobattery tolerance
VCLAMP_STB_DP/M_3V3
Data line system side
clamping voltage during STB
VCLAMP_STB_DP/M_0V6
Data line system side
clamping voltage during STB
V±
D±
D±
Charge battery-equivalent capacitor to test
voltage then discharge to pin under test through
a 1 meter, 18-ga wire. (See Figure 23
application information for more details)
18
V
Test both D+ and D– FETs. Test D+ and D–
independently. Short VD+ and VD– to 18 V via
hotplug to a battery-equivalent capacitor with a
1 meter, 18-ga wire. VREF = 3.3 V, VPWR = 5 V.
Test in standard mode 0 and mode 1
5.5
6
V
Test both D+ and D– FETs. Short VD+ and
VD– to 18 V via hotplug to a battery-equivalent
capacitor with a 1 meter, 18-ga wire. VREF =
0.63 V, VPWR = 5 V. Test in standard mode 0
and mode 1
3.2
3.5
V
4
6.5
Ω
1
Ω
DATA LINE SWITCHES – VD+ to D+ or VD– to D–
On resistance
Mode 0 or 1. Set VPWR = 5 V; VREF = 3.3 V; EN
= 0 V; Measure resistance between D+ and
VD+ or D– and VD–, voltage between 0 and 0.4
V
RON(Flat)
On resistance flatness
Mode 0 or 1. Set VPWR = 5 V; VREF = 3.3 V; EN
= 0 V; Measure resistance between D+ and
VD+ or D– and VD–, sweep voltage between 0
and 0.4 V. Take difference of resistance at 0.4V and 0-V VD± bias
BWON
On bandwidth (–3-dB)
Mode 0 or 1. Set VPWR = 5 V; VREF = 3.3 V; EN
= 0 V; Measure S21 bandwidth from D+ to VD+
or D– to VD– with voltage swing = 400 mVpp,
Vcm = 0.2 V
RON
960
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6.8 Power Supply and Supply Current Consumption Chracteristics
over operating free-air temperature range (unless otherwise noted)
PARAMETER
VUVLO_RISING_
VPWR
VUVLO_HYST_V
TEST CONDITIONS
MIN
TYP
MAX
VPWR rising UVLO threshold
Use standard mode 0 set-up. Set EN = 0 V, load D+ to 45
Ω, VD+ = 3.3 V. Set VPWR = 3.5 V, and step up VPWR until
90% of VD+ appears on D+
3.7
3.95
4.2
V
VPWR UVLO hysteresis
Use standard mode 0 set up. Set EN = 0 V, load D+ to 45
Ω, VD+ = 3.3 V. Set VPWR = 4.3 V, and step down
VPWR until D+ falls to 10% of VD+. This gives
VUVLO_FALLING_VPWR. VUVLO_RISING_VPWR –
VUVLO_FALLING_VPWR = VUVLO_HYST_VPWR for this unit
250
300
400
mV
Use standard mode 0 set up. Set EN = 0V, load D+ to 45
Ω, VD+ = 3.3 V. Set VREF = 2.5 V, and step up
VREF until 90% of VD+ appears on D+
2.6
2.7
2.9
V
Use standard mode 0 set up. Set EN = 0 V, load D+ to 45
Ω, VD+ = 3.3 V. Set VREF = 3 V, and step down
VREF until D+ falls to 10% of VD+. This gives
VUVLO_FALLING_VREF. VUVLO_RISING_VREF
–VUVLO_FALLING_VREF = VUVLO_HYST_VREF for this unit
75
125
200
mV
PWR
VUVLO_RISING_ VREF rising UVLO threshold
in mode 0
VREF
VUVLO_HYST_V
VREF UVLO hysteresis
REF
UNIT
IVPWR_DISABLE VPWR disabled current
consumption
D_MODE0
Use standard mode 0. EN = 5 V . Measure current into
VPWR
110
µA
IVPWR_DISABLE VPWR disabled current
consumption
D_MODE1
Use standard mode 1. EN = 5 V. Measure current into
VPWR
110
µA
IVREF_DISABLE
VREF disabled current
consumption mode 0
Use standard mode 0. EN = 5 V. Measure current into
VREF
10
µA
IVPWR_MODE0
VPWR pperating current
consumption
Use standard mode 0. EN = 0 V. Measure current into
VPWR
250
µA
IVPWR_MODE1
VPWR operating current
consumption
Use standard mode 1. EN = 0 V. Measure current into
VPWR
350
µA
IVREF
VREF operating current
consumption mode 0
Use standard mode 0. EN = 0 V. Measure current into
VREF
12
20
µA
VREF fast charge current
Standard mode 1. 0.1 µF < CVREF < 3 µF. Set-up for
charging to 3.3 V. Use a high voltage capacitor that does
not derate capacitance up the 3.3 V. Measure slope to
calculate the current when CVREF cap is being
charged. Test to check this OPEN LOOP method
22
D
ICHG_VREF
ID_OFF_LEAK_S
TB
ID_ON_LEAK_ST
B
IVD_OFF_LEAK_
STB
IVD_ON_LEAK_S
TB
mA
Mode 0. Measured flowing into D+ or D– supply, VPWR = 0
V, VD+ or VD– = 18 V, EN = 0 V, VREF = 0 V, D± = 0 V
–1
1
Mode 0. Measured flowing into D+ or D– supply, VPWR = 5
V, VD+ or VD– = 18 V, EN = 0 V, VREF = 3.3 V, D± = 0 V
–1
1
µA
µA
Mode 0. Measured flowing out of VD+ or VD– supply,
VPWR = 0 V, VD+ or VD– = 18 V, EN = 0 V, VREF = 0 V,
D± = 0 V
120
Mode 0. Measured flowing out of VD+ or VD– supply,
VPWR = 5 V, VD+ or VD– = 18 V, EN = 0 V, VREF = 3.3 V,
D± = 0 V
120
µA
IVPWR_TO_VRE Leakage from VPWR to
VREF
F_LEAK
Use standard mode 0. Set VREF = 0 V. Measured
current flowing out of VREF pin
1
µA
IVREF_TO_VPW
Use standard mode 0. Set VPWR = 0 V. Measured as
current flowing out of VPWR pin
1
µA
R_LEAK
Leakage from VREF to
VPWR
6.9 Timing Requirements
over operating free-air temperature range (unless otherwise noted)
MIN
NOM MAX
UNIT
ENABLE PIN AND VREF FAST CHARGE
TVREF_CHG
8
VREF fast charge time
Time between when 5 V is applied to VPWR, and VREF
reaches VVREF_FAST_CHG. Needs to happen before or at
same time tON_STARTUP completes
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1
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Timing Requirements (continued)
over operating free-air temperature range (unless otherwise noted)
MIN
TON_STARTU
P_MODE0
TON_STARTU
P_MODE1
Mode 0. EN = 0 V, measured from VPWR and VREF =
UVLO+ to data FET ON, VPWR comes to UVLO+ second.
Device turnon time from UVLO
Place 3.3 V on VD±. Ramp VREF to 3.3 V, then VPWR
mode 0
to 5 V and measure the time it takes for D± to reach 90%
of VD±
NOM MAX
0.5
Informative. mode 1. EN = 0 V, measured from VPWR =
Device turnon time from UVLO
UVLO+ to data FET ON
mode 1
1
0.5 +
TCHG_C
UNIT
ms
ms
VREF
Mode 1. EN = 0 V, measured from VPWR = UVLO+ to
Device turnon time from UVLO
data FET ON, CVREF = 1 µF, VREF_FINAL = 3.3 V.
mode 1
Measure the time it takes for D± to reach 90% of VD±
0.6
Device turnon time mode 0
Mode 0. VPWR = 5 V, VREF = 3.3 V, time from EN is
asserted until data FET is ON. Place 3.3 V on VD±,
measure the time it takes for D± to reach 90% of VD±
150
µs
Device turnon time mode 1
Mode 1. VPWR = 5 V, VREF_INITIAL = 0 V, time from EN is
asserted until data FET is ON. Place 3.3 V on VD±,
measure the time it takes for D± to reach 90% of VD±
150 +
TCHG_V
µs
Mode 1. VPWR = 5 V, VREF_INITIAL = 0 V, time from EN is
TON_EN_MOD Device turnon time mode 1 for asserted until data FET is ON. Place 3.3 V on VD±,
VREF = 3.3 V
measure the time it takes for D± to reach 90% of
E1_3.3V
VD±. CVREF = 1 µF, VREF_FINAL = 3.3 V
300
µs
Mode 0 or 1. VPWR = 5 V, VREF = 3.3 V, time from EN is
deasserted until data FET is off. Place 3.3 V on VD±,
measure the time it takes for D± to fall to 10% of
VD±, RD± = 45 Ω
5
µs
TON_STARTU
P_MODE1_3.3V
TON_EN_MOD
E0
TON_EN_MOD
E1
TOFF_EN
Device turnoff time
ms
REF
Informative. Mode 1. Time from VREF = 0 V to 80% ×
VREF_FINAL after EN transitions from high to low
TCHG_CVREF
1
(CVREF
× 0.8
(VREF_FI
NAL)/(IC
Time to charge CVREF
s
HG_VREF
)
TCHG_CVREF
_3.3V
TCHG_CVREF
_0.66V
Time to charge CVREF to 3.3 V
Mode 1. Time from VREF = 0 V to 90% × 3.3 V after EN
transitions from high to low, CVREF = 1 µF
132
µs
Time to charge CVREF to 0.66
V
Mode 1. Time from VREF = 0 V to 90% × 0.63 V after EN
transitions from high to low, CVREF = 1 µF. RTOP = 47.5
kΩ ± 1%, RBOT = 150 kΩ ± 1%
26
µs
Mode 0 or 1. Measured from OVP condition to FET turn
off . Short VD± to 5 V and measure the time it takes D±
voltage to reach 0.1 × VD±_CLAMP_MAX from the time the 5V hot-plug is applied. RLOAD_D± = 45 Ω. (1) (2)
2
µs
OVER VOLTAGE PROTECTION
tOVP_response
OVP response time to VBUS
_VBUS
tOVP_response OVP response time
Mode 0 or 1. Measured from OVP condition to FET turn
off . Short VD± to 18 V and measure the time it takes D±
voltage to reach 0.1 × VD±_CLAMP_MAX from the time the
18-V hot-plug is applied. RLOAD_D± = 45 Ω (1) (2)
0.1
tOVP_Recov
Recovery time FLT pin
Measured from OVP clear to FLT deassertion (1)
32
ms
Measured from OVP clear until FET turns back on. Drop
VD+ from 16 V to 3.3 V with VREF = 3.3 V, measure time
it takes for D+ to reach 90% of 3.3 V
32
ms
_FET
Recovery time for data FET to
turn back on
tOVP_ASSERT
FLT assertion time
Measured from OVP on VD+ or VD– to FLT assertion
1
µs
_FLT
tOVP_Recov
(1)
(2)
12.6
18
23.4
ms
Shown in Figure 1.
Specified by design, not production tested.
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VOVP
VD+/-
/EN
tOVP_OFF
tOVP_Recov
D+/tOVP_/FLT_ON
tOVP_/FLT_OFF
/FLT
(1)
OVP Operation – VD+, VD–
Figure 1. TPD2S703-Q1 Timing Diagram
10
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6.10 Typical Characteristics
100
60
VD
D
80
40
60
20
Voltage (V)
Voltage (V)
VD
D
40
20
0
-20
0
-40
-20
-40
-10
0
10
20
30
40 50
Time (ns)
60
70
80
90
-60
-10
100
Figure 2. 8-kV IEC 61400-4-2 Contact Waveform
20
30
40 50
Time (ns)
60
70
80
90
100
Fig2
40
VD
D
60
VD
D
20
40
0
Voltage (V)
Voltage (V)
10
Figure 3. –8-kV IEC 61400-4-2 Contact Waveform
80
20
0
-20
-40
-20
-60
-40
-60
-10
0
Fig1
0
10
20
30
40 50
Time (ns)
60
70
80
90
-80
-10
100
0
10
20
30
Fig3
Figure 4. 8-kV ISO 10605 (330-pF, 330-Ω) Contact Waveform
40 50
Time (ns)
60
70
80
90
100
Fig4
Figure 5. –8-kV ISO 10605 (330-pF, 330-Ω) Contact
Waveform
6
1
0.8
5
0.6
4
Voltage (V)
Current (mA)
0.4
0.2
0
-0.2
3
2
-0.4
-0.6
1
-0.8
-1
-5
0
5
10
Voltage (V)
15
20
25
0
-600
/EN
VDr
Dr
/FLT
-400
Fig5
Figure 6. Data Line I-V Curve
-200
0
Time (Ps)
200
400
600
Figure 7. Data Switch Turnon Time
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Typical Characteristics (continued)
200
200
Diabled
Enabled
180
VPWR Operating Current (PA)
180
160
120
100
80
60
40
160
140
120
100
80
60
40
0
-40
0
3
3.5
4
4.5
Bias Voltage (V)
5
5.5
6
4.5
5.5
4
20
40
60
80
Temperature (qC)
100
120
140
Fig8
3.5
Data Switch RON (:)
On Resistance (:)
0
Figure 9. VPWR Operating Current vs Temperature
(VPWR = 5 V)
5
4.5
4
3.5
3
3
2.5
2
1.5
1
2.5
-40qC
25qC
85qC
125qC
0.5
0
2
0
0.5
1
1.5
2
Bias Voltage (V)
2.5
3
0
3.5
7.5
6.5
7.5
5.5
6
4.5
4.5
3.5
3
2.5
1.5
1.5
0
0.5
-1.5
0.5
1
1.5
2
2.5
Time (us)
3
3.5
4
1.5
2
Bias Voltage (V)
2.5
3
3.5
Fig1
Figure 11. Data Switch RON vs Bias Voltage
-3
4.5
Voltage (V) or Current (A) on VD+
8.5
0
1
25
13.5
VD+ V
12
VD+ I
D+ V
10.5
/FLT
9
9.5
D + &/FLT (V)
10.5
-0.5
-0.5
0.5
D010
Figure 10. VD± Leakage Current at 18 V Across Temperature
(Enabled)
Voltage (V) or Current (A)
-20
Fig7
Figure 8. VPWR Operating Current vs Bias Voltage
12.5
VD+ V
VD+ I
D+ V
/FLT
20
10
15
7.5
10
5
5
2.5
0
0
-5
-0.5
-2.5
-0.2
D011
Figure 12. Data Switch Short-to-5 V Response Waveform
12
Disabled
Enabled
20
20
Voltage (V) on D+ and /FLT
Current (PA)
140
0.1
0.4
0.7
1
Time (us)
1.3
1.6
1.9
D012
Figure 13. Data Switch Short-to-18 V Response Waveform
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Typical Characteristics (continued)
7
7
VDr
/FLT
6
5
Voltage (V)
5
Voltage (V)
VDr
/FLT
6
4
3
4
3
2
2
1
1
0
0
0
5
10
15
20
25
Time (ms)
30
35
40
0
10
Figure 14. FLT Assertion Time During OVP
30
40
50
60
Time (ms)
70
80
90
100
Fig1
Figure 15. FLT Recover Time After OVP Clear
0
0
-1
-1
-2
-2
Insertion Loss (dB)
Insertion Loss (dB)
20
Fig1
-3
-4
-5
-6
-3
-4
-5
-6
-7
1E+5
1E+6
1E+7
1E+8
Frequency (Hz)
1E+9
5E+9
-7
1E+5
D015
D001
Figure 16. Data Switch Differential Bandwidth
Figure 18. USB2.0 Eye Diagram (No TPD2S703-Q1)
1E+6
1E+7
1E+8
Frequency (Hz)
1E+9
5E+9
D016
Figure 17. Data Switch Single-Ended Bandwidth
Figure 19. USB2.0 Eye Diagram (With TPD2S703-Q1)
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ESD Strike Points
7 Parameter Measurement Information
USB 2.0
CMC
10 nH
VD-
D-
VD+
D+
45 Ÿ
10 nH
45 Ÿ
CCLAMP
TPD2S703-Q1
5V
GND
VREF
/FLT
VPWR
RTOP
5V
CPWR
MODE
/EN
RBOT
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Figure 20. ESD Setup
STB Strike Points
USB 2.0
CMC
10nH
D-
VD-
45Ÿ
10nH
D+
VD+
GND
TPD2S703-Q1
VREF
1m cable
VPWR
/FLT
DC Power
Supply
22 mF
35 V
45Ÿ
CCLAMP
5V
Strike
Output
RTOP
5V
CPWR
MODE
/EN
RBOT
STB Test Aparatus
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Figure 21. Short-to-Battery Setup
14
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8 Detailed Description
8.1 Overview
The TPD2S703-Q1 is a 2-Channel Data Line Short-to-Battery, Short-to-VBUS, and IEC61000-4-2 ESD protection
device for automotive high-speed interfaces like USB2.0. The TPD2S703-Q1 contains two data line nFET
switches which ensure safe data communication while protecting the internal system circuits from any
overvoltage conditions at the VD+ and VD– pins. On these pins, this device can handle overvoltage protection up
to 18-V DC. This provides sufficient protection for shorting the data lines to the car battery as well as the USB
VBUS rail.
Additionally, the TPD2S703-Q1 has a FLT pin which provides an indication when the device sees an overvoltage
condition and automatically resets when the overvoltage condition is removed. The TPD2S703-Q1 also
integrates IEC ESD clamps on the VD+ and VD– pins, thus eliminating the need for external TVS clamp circuits
in the application.
The TPD2S703-Q1 has an internal oscillator and charge pump that controls the turnon of the internal nFET
switches. The internal oscillator controls the timers that enable the charge pump and resets the open-drain FLT
output. If VD+ and VD– are less than VOVP, the internal charge pump is enabled. After an internal delay, the
charge-pump starts-up, turning on the internal nFET switches. At any time, if VD+ or VD– rises above VOVP,
TPD2S703-Q1 asserts FLT pin LOW and the nFET switches are turned off.
8.2 Functional Block Diagram
VPWR
VREF
MODE
Control Logic
FLT
EN
Overvoltage
Protection
D+
VD+
ESD
Clamps
D-
VD-
GND
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8.3 Feature Description
8.3.1 OVP Operation
When the VD+, or VD– voltages rise above VOVP, the internal nFET switches are turned off, protecting the
transceiver from overvoltage conditions. The response is very rapid, with the FET switches turning off in less
than 1 µs. Before the OVP condition, the FLT pin is High-Z, and is pulled HIGH via an external resistor to
indicate there is no fault. Once the OVP condition occurs, the FLT pin is asserted LOW. When the VD+, or VD–
voltages returns below VOVP – VHYS-OVP, the nFET switches are turned on again. When the OVP condition is
cleared and the nFETs are completely turned on, the FLT is reset to high-Z.
8.3.2 OVP Threshold
5.0 V
4.5 V
4.5
1.875 V
0.9 V
4.0 V
0.375 V
VOVP = 0.75 V
1 / Ratio = 1.25
3.6 V
0.15 V
VREF = 0.6 V
1.5 V
Figure 22. OVP Threshold
The OVP Threshold VOVP is set by VREF according to Equation 1, Equation 2 and Equation 3.
VOVP
1.25 u VREF
(1)
VREF d 3.6 V
(2)
VOVP = 4.5 V for VREF > 3.6 V
(3)
Equation 1, Equation 2 and Equation 3 yield the typical VOVP values. See the parametric tables for the minimum
and maximum values that include variation over temperature and process. Figure 22 gives a graphical
representation of the relationship between VOVP and VREF.
VREF can be set either by an external regulator (Mode 0) or an internal adjustable regulator (Mode 1). See the
VREF Operation section for more details on how to operate VREF in Mode 0 and Mode 1.
8.3.3 D± Clamping Voltage
The TPD2S703-Q1 provides a differentiated device architecture which allows the system designer to control the
clamping voltage the protected transceiver sees from the D+ and D– pins. This architecture allows the system
designer to minimize the amount of stress the transceiver sees during Short-to-Battery and ESD events. The
clamping voltage that appears on the D+ and D– lines during a short-to-battery or ESD event obeys Equation 4.
VCLAMP _ DP / M VREF VBR IRDYN
(4)
16
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Feature Description (continued)
Where VBR approximately = 0.7 V, IRDYN approximately = 1 V. By adjusting VREF, the clamping voltage of the D+
and D– lines can be adjusted. As VREF also controls the OVP threshold, take care to insure that the VREF setting
both satisfies the OVP threshold requirements while simultaneously optimizing system protection on the D+ and
D– lines.
The size of the capacitor used on the VREF pin also influences the clamping voltage as transient currents during
Short-to-Battery and ESD events flow into the VREF capacitor. This causes the VREF voltage to increase, and
likewise the clamping voltage on D± according to Equation 4. The larger capacitor that is used, the better the
clamping performance of the device is going to be. See the parametric tables for the clamping performance of
the TPD2S703-Q1 with a 1-µF capacitor.
8.4 Device Functional Modes
The TPD2S703-Q1 has two modes of operation which vary the way the VREF pin functions. In Mode 0, the
VREF pin is connected to an external regulator which sets the voltage on the VREF pin. In Mode 1, the
TPD2S703-Q1 uses an adjustable internal regulator to set the VREF voltage. Mode 1 enables the system
designer to operate the TPD2S703-Q1 with a single power supply, and have the flexibility to easily set the VREF
voltage to any voltage between 0.6 V and 3.8 V with two external resistors.
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9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
The TPD2S703-Q1 offers 2-channels of short-to-battery protection (up to 18-V DC), short-to-VBUS protection,
and IEC ESD protection for automotive high speed interfaces such as USB 2.0. For the overvoltage protection
(OVP), this device integrates N-channel FET’s which quickly isolate (200 ns) the protected circuitry in the event
of an overvoltage condition on the VD+ and VD– lines. With respect to the ESD protection, the TPD2S703-Q1
has an internal clamping diode on each data line (VD+ and VD–) which provides 8-kV contact ESD protection
and 15-kV air-gap ESD protection. More details on the internal components of the TPD2S703-Q1 can be found in
the Overview section.
The TPD2S703-Q1 also has the ability to vary the OVP threshold based on the configuration of the Mode pin and
the voltage present on the VREF pin (0.6 V-4.5 V). This functionality is discussed in greater depth in the OVP
Threshold section. Once the VREF threshold is crossed, a fault is detectable to the user through the FLT pin,
where 5 V on the pin indicates no fault is detected, and 0 V-0.4 V represents a fault condition. Figure 23 shows
the TPD2S703-Q1 in a typical application, interfacing between the protected internal circuitry and the connector
side, where ESD vulnerability is at its highest.
9.2 Typical Application
Figure 23. USB 2.0 Port With Short-to-Battery and IEC ESD Protection
18
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Typical Application (continued)
9.2.1 Design Requirements
9.2.1.1 Device Operation
Table 1 gives the complete device functionality in response to the EN pin, to overvoltage conditions at the
connector (VD± pins), to thermal shutdown, and to the conditions of the VPWR, VREF, and MODE pins.
Table 1. Device Operation Table
Functional Mode EN
MODE
VREF
VPWR
VD±
TJ
FLT
Comments
NORMAL OPERATION
Mode 0
unpowered 1
X
Rbot ≤ 2.6 kΩ
X
X
X
X
H
Device unpowered, data
switches open
Mode 0
unpowered 2
X
Rbot ≤ 2.6 kΩ
X
X
X
X
H
Device unpowered, data
switches open
Mode 1
unpowered
X
Rtop | | Rbot > 14 kΩ
X
X
X
X
H
Device unpowered, data
switches open
Mode 0 disabled
H
Rbot ≤ 2.6 kΩ
>UVLO
>UVLO
X
14 kΩ
Set by Rtop
and Rbot
>UVLO
X
UVLO
>UVLO
UVLO
TSD
L
Thermal shutdown, data
switches opened, FLT pin
asserted
Mode 1 thermal
shutdown
X
Rtop | | Rbot > 14 kΩ
Set by Rtop
and Rbot
>UVLO
X
>TSD
L
Thermal shutdown, data
switches opened, VREF is
disabled, FLT pin asserted
L
Data line overvoltage
protection mode. OVP is set
relative to the voltage on VREF.
Data switches opened, FLT
pin asserted
L
Data line overvoltage
protection mode. OVP is set
relative to the voltage on VREF.
Data switches opened, fault
pin asserted
Mode 0 OVP fault
Mode 1 OVP fault
Rbot ≤ 2.6 kΩ
>UVLO
Rtop | | Rbot > 14 kΩ
Set by Rtop
and Rbot
L
L
>UVLO
>UVLO
>OVP
>OVP
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