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TPD4E6B06
SLVSCK3C – MAY 2014 – REVISED FEBRUARY 2017
TPD4E6B06 4-Channel Bidirectional Low Capacitance ESD Protection Device With 15-kV
Contact and Ultra-Low Clamping Voltage
1 Features
3 Description
•
The TPD4E6B06 is a four channel electrostatic
discharge (ESD) protection device in an ultra small
DPW package. It is the industry’s smallest 4-channel
transient voltage suppressor (TVS) diode with a 0.48mm pitch. This larger pitch helps save on printedcircuit board (PCB) manufacturing costs. The device
provides IEC61000-4-2 compliance up to 15-kV
contact discharge. It has an ESD clamp circuit with
back-to-back diodes for bipolar-bidirectional signal
support. The 4.8-pF (typical) line capacitance is
suitable for a wide range of applications supporting
data rates up to 700 MHz.
1
•
•
•
•
•
•
•
•
IEC 61000-4-2 Level 4
– ±15-kV Contact Discharge
– ±15-kV Air Gap Discharge
IEC 61000-4-5 (Surge): 3 A (8/20 µs)
IO Capacitance: 4.8 pF (Typical)
RDYN: 0.75 Ω (Typical)
DC Breakdown Voltage: ±6 V (Minimum)
Ultra Low Leakage Current: 100 nA (Maximum)
Clamping Voltage: 10 V (Maximum at IPP = 1 A)
Industrial Temperature Range: –40°C to +125°C
Space Saving DPW Package (0.8 mm × 0.8 mm)
Device Information(1)
PART NUMBER
PACKAGE
BODY SIZE (NOM)
2 Applications
TPD4E6B06
•
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
•
•
•
•
•
•
•
•
•
Audio Lines
– Microphone
– Earphone
– Speakerphone
SD Interface
SIM Interface
Mobile Keyboard or Other Buttons
Cell Phones
eBook
Portable Media Players
Digital Camera
Tablet PC
Wearables
X2SON (4)
Pinout
Simplified Schematic
2
GND
4
3
System
Connector
1
1
0.80 mm × 0.80 mm
2
GND
4
3
0.8 mm x 0.8mm X2SON Package
(Bottom View)
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TPD4E6B06
SLVSCK3C – MAY 2014 – REVISED FEBRUARY 2017
www.ti.com
Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
6.1
6.2
6.3
6.4
6.5
6.6
4
4
4
4
5
6
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Typical Characteristics ..............................................
Detailed Description .............................................. 8
7.1 Overview ................................................................... 8
7.2 Functional Block Diagram ......................................... 8
7.3 Feature Description................................................... 8
7.4 Device Functional Modes.......................................... 9
8
Application and Implementation ........................ 10
8.1 Application Information............................................ 10
8.2 Typical Application ................................................. 10
9 Power Supply Recommendations...................... 12
10 Layout................................................................... 12
10.1 Layout Guidelines ................................................. 12
10.2 Layout Examples................................................... 12
11 Device and Documentation Support ................. 14
11.1
11.2
11.3
11.4
11.5
11.6
Documentation Support ........................................
Receiving Notification of Documentation Updates
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
14
14
14
14
14
14
12 Mechanical, Packaging, and Orderable
Information ........................................................... 14
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision B (February 2017) to Revision C
•
Added "Power Supply Recommendations" section .............................................................................................................. 12
Changes from Revision A (December 2015) to Revision B
•
Page
Page
Changed the value of RDYN from 0.75 and 0.65 to 0.45 and 0.42 respectively, in the Electrical Characteristics table ......... 5
Changes from Original (May 2014) to Revision A
Page
•
Updated the Handling Ratings table into an ESD Ratings table and moved Tstg to the Absolute Maximum Ratings table... 4
•
Added new note to Absolute Maximum Ratings table ........................................................................................................... 4
•
Added frequency test condition to IO capacitance in the Electrical Characteristics table...................................................... 5
•
Added Community Resources ............................................................................................................................................. 14
2
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SLVSCK3C – MAY 2014 – REVISED FEBRUARY 2017
5 Pin Configuration and Functions
DPW Package
5-Pin X2SON
Bottom View
IO1
IO2
1
2
GND
4
3
IO3
IO4
Pin Functions
PIN
NO
NAME
I/O
DESCRIPTION
1
IO1
IO
ESD protected line
2
IO2
IO
ESD protected line
3
IO3
IO
ESD protected line
4
IO4
IO
ESD protected line
5
GND
—
Ground
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SLVSCK3C – MAY 2014 – REVISED FEBRUARY 2017
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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1) (2) (3)
MIN
Peak pulse
IEC 61000-4-5 Power (tp – 8/20 µs)
Storage temperature
(2)
(3)
(4)
UNIT
3
A
(4)
Operating temperature
(1)
MAX
IEC 61000-4-5 Current (tp – 8/20 µs) (4)
Tstg
40
W
–40
125
°C
–65
155
°C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
Absolute maximum ratings apply over recommended junction temperature range.
Voltages are with respect to GND unless otherwise noted.
Measured at 25°C.
6.2 ESD Ratings
VALUE
Electrostatic
discharge
V(ESD)
(1)
(2)
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins (1)
±2000
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins (2)
±500
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Pins listed as 2 kV
may actually have higher performance.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Pins listed as 500 V
may actually have higher performance.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
VIO
Input pin voltage
–5.5
5.5
UNIT
V
TA
Operating free-air temperature
–40
125
°C
6.4 Thermal Information
TPD4E6B06
THERMAL METRIC (1)
DPW (X2SON)
UNIT
5 PINS
RθJA
Junction-to-ambient thermal resistance
291.8
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
224.2
°C/W
RθJB
Junction-to-board thermal resistance
245.8
°C/W
ψJT
Junction-to-top characterization parameter
31.4
°C/W
ψJB
Junction-to-board characterization parameter
245.6
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
195.4
°C/W
(1)
4
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
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6.5 Electrical Characteristics
TA = –40°C to +125°C (unless otherwise specified)
PARAMETER
TEST CONDITION
MIN
VRWM
Reverse stand-off voltage
IIO = 10 µA
VBRF
Break-down voltage
IIO to GND = 1 mA
6
VBRR
Break-down voltage
IGND to IO = 1 mA
6
ILEAK
Leakage current
VIO = 5 V
VCLAMP
Clamp voltage with ESD strike
Dynamic resistance
CL
IO capacitance
(1)
(2)
–5.5
MAX
5.5
UNIT
V
V
V
100
nA
I = 1 A, IO to GND, 8/20 μs (1)
10
V
I = 5 A, IO to GND, 8/20 μs (1)
13
V
I = 1 A, IO to GND, 8/20 μss (1)
9
V
I = 5 A, IO to GND, 8/20 μs
RDYN
TYP
(1)
13
V
Any IO to GND pin (2)
0.45
Ω
GND to any IO pin (2)
0.42
Ω
VIO = 2.5 V; ƒ = 10 MHz
4.8
7
pF
Non-repetitive current pulse 8/20 µs exponentially decaying waveform according to IEC61000-4-5.
Extraction of RDYN using least squares fit of TLP characteristics between I = 10 A and I = 20 A.
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60
10
50
0
40
−10
Amplitude (dB)
30
20
−20
−30
10
−40
0
−50
−10
−15
0
15
30
45
60 75 90
Time (ns)
−60
−15
105 120 135 150
Figure 1. IEC 61000-4-2 Clamping Voltage, 8-kV Contact
10
8
10
8
Current (A)
Current (A)
5
4
60 75 90
Time (ns)
105 120 135 150
G002
6
5
4
3
3
2
2
1
1
0
3
6
9
12
15
18
Voltage (V)
21
24
27
0
30
0
3
6
G003
9
12
15
18
Voltage (V)
21
24
27
30
G004
Figure 4. TLP, tPW = 100 ns, tRISE = 10 ns, GND to IO
50
0.0010
4.0
0.0008
3.6
0.0006
3.2
40
0.0004
2.8
35
2.4
30
2.0
25
1.6
20
−0.0004
1.2
15
−0.0006
0.8
10
0.4
5
Current (A)
Current (A)
45
7
6
Figure 3. TLP, tPW = 100 ns, tRISE = 10 ns, IO to GND
0.0002
0.0000
−0.0002
−0.0008
−0.0010
−10 −8
0.0
−6
−4
−2
0
2
4
Voltage (V)
6
8
10
12
Current
Power
0
5
10
15
20
25
30
Time (µs)
35
40
45
50
45
0
G006
G005
Figure 6. Surge Curves, IO to GND
Figure 5. IV Curve
6
30
RDYN = 0.42 Ω
tPW = 100 ns*
tRISE = 10 ns*
9
7
0
15
Figure 2. IEC 61000-4-2 Clamping Voltage, –8-kV Contact
RDYN = 0.45 Ω
tPW = 100 ns*
tRISE = 10 ns*
9
0
G001
Power (W)
Voltage (V)
6.6 Typical Characteristics
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Typical Characteristics (continued)
6.0
45
5.8
3.2
40
5.6
2.8
35
5.4
2.4
30
2.0
25
1.6
20
1.2
15
0.8
10
0.4
5
Current (A)
0.0
0
5
10
15
20
25
30
Time (µs)
35
40
45
50
Power (W)
Current
Power
3.6
Capacitance (pF)
50
4.0
5.2
5.0
4.8
4.6
4.4
4.2
0
4.0
0
0.5
1
Figure 7. Surge Curves, GND to IO
Loss (dB)
1.5
G007
2
2.5
3
Bias Voltage (V)
3.5
4
4.5
5
G008
Figure 8. Capacitance
3
0
−3
−6
−9
−12
−15
−18
−21
−24
−27
−30
−33
100k
1M
10M
100M
Frequency (Hz)
1G
3G
G009
Figure 9. Insertion Loss
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7 Detailed Description
7.1 Overview
The TPD4E6B06 is a four channel ESD Protection device in an ultra small DPW package. It is the industry’s
smallest 4-CH ESD protection device with 0.48-mm pitch. This larger pitch helps save on PCB manufacturing
costs. The device provides IEC61000-4-2 compliance up to 15-kV contact discharge. It has an ESD clamp circuit
with back-to-back diodes for bipolar/bidirectional signal support. The 4.8-pF (Typical) line capacitance is suitable
for a wide range of applications supporting frequencies up to 700 MHz.
7.2 Functional Block Diagram
IO1
IO2
IO3
IO4
GND
7.3 Feature Description
7.3.1 IEC 61000-4-2 Level 2 ESD Protection
The IO pins can withstand ESD events up to ±15-kV contact and ±15-kV air. An ESD-surge clamp diverts the
current to ground.
7.3.2 IEC 61000-4-5 Surge Protection
The IO pins can withstand surge events up to 3 A and 40 W (8/20 µs waveform). An ESD-surge clamp diverts
this current to ground.
7.3.3 IO Capacitance
The capacitance between any IO pin to ground is 4.8 pF (typical). This capacitance supports frequencies up to
700 MHz.
7.3.4 RDYN
The low RDYN of 0.75 Ω (typical) allows for lower clamping voltages.
7.3.5 DC Breakdown Voltage
The DC breakdown voltage of any IO pin is a minimum of ±6 V. This ensures that sensitive equipment is
protected from surges above the reverse standoff voltage of ±5.5 V (minimum).
7.3.6 Ultra-Low Leakage Current
The IO pins feature an ultra-low leakage current of 100 nA (maximum) with a bias of 2.5 V.
8
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Feature Description (continued)
7.3.7 Clamping Voltage
The IO pins feature an ESD clamp capable of clamping the voltage to 10 V (IO to GND) or 9 V (GND to IO) of
IEC61000-4-5 surge when IPP = 1 A.
7.3.8 Industrial Temperature Range
This device features an industrial operating range of –40°C to +125°C.
7.3.9 Space Saving DPW Package
The small 0.8 mm × 0.8 mm package size saves board space and makes it easy to add ESD protection.
7.4 Device Functional Modes
The TPD4E6B06 is a passive integrated circuit that triggers when voltages are above VBRF or VBRR. During ESD
events, voltages as high as ±15 kV (air) can be directed to ground via the internal diode network. Once the
voltages on the protected line fall below the trigger levels of the TPD4E6B06 (usually within 10s of nanoseconds) the device reverts to passive.
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8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The TPD4E6B06 is a diode array type TVS. These low capacitance types of TVSs are typically used to provide a
path to ground for dissipating ESD events on hi speed signal lines between a human interface connector and a
system. During high voltage ESD strikes, the device clamps to a safe voltage level to protect the system.
The typical application of the TPD4E6B06 is to be placed in between the connector and the system. The low
capacitance of the TPD4E6B06 gives flexibility in the end application, as it can be used on many different high
speed interfaces.
1
2
System
Connector
8.2 Typical Application
GND
4
3
Figure 10. Protecting Data Lines
8.2.1 Design Requirements
Table 1 shows the design parameters.
Table 1. Design Parameters
DESIGN PARAMETER
EXAMPLE VALUE
Signal range on data lines
–5.5 V to 5.5 V
Operating frequency
Up to 700 MHz
8.2.2 Detailed Design Procedure
The designer needs to know the following:
• Signal range on all the protected lines
• Operating frequency
8.2.2.1 Signal Range
The TPD4E6B06 has 4 protection channels for signal lines. Any I/O supports a signal range of –5.5 V to
5.5 V.
8.2.2.2 Operating Frequency
The TPD4E6B06 has 4.8 pF of capacitance (Typical), supporting up to 700 MHz frequencies.
10
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Loss (dB)
8.2.3 Application Curve
3
0
−3
−6
−9
−12
−15
−18
−21
−24
−27
−30
−33
100k
1M
10M
100M
Frequency (Hz)
1G
3G
G009
Figure 11. Insertion Loss (Any IO to GND)
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9 Power Supply Recommendations
The TPD4E6B06 is a passive TVS diode-based ESD protection device, so there is no need to power it. Ensure
that the maximum voltage specifications for each pin are not violated.
10 Layout
10.1 Layout Guidelines
•
•
•
Place the device as close to the connector as possible.
– EMI during an ESD event can couple from the trace being struck to other nearby unprotected traces,
resulting in early system failures.
– The PCB designer must minimize the possibility of EMI coupling by keeping any unprotected traces away
from the protected traces which are between the TVS and the connector.
Route the protected traces as straight as possible.
Eliminate any sharp corners on the protected traces between the TVS and the connector by using rounded
corners with the largest radii possible.
– Electric fields tend to build up on corners, increasing EMI coupling.
10.2 Layout Examples
= VIA to GND Plane
1
4
2
3
Figure 12. Single Layer Routing
12
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Layout Examples (continued)
= VIA
1
4
GND
2
3
Figure 13. Double Layer Routing
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11 Device and Documentation Support
11.1 Documentation Support
11.1.1 Related Documentation
For related documentation, see the following:
• Reading and Understanding an ESD Protection Datasheet
• ESD Layout Guide
11.2 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
11.3 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
11.4 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
11.5 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
11.6 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
14
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PACKAGE OUTLINE
DPW0004A
X2SON - 0.4 mm max height
SCALE 12.000
PLASTIC SMALL OUTLINE - NO LEAD
0.85
0.75
B
A
PIN 1 INDEX AREA
0.85
0.75
0.4 MAX
C
SEATING PLANE
NOTE 4
(0.1)
0.25 0.1
0.05
0.00
THERMAL PAD
2
3
NOTE 4
5
2X
0.48
(45 ) TYP
4
1
PIN 1 ID
(OPTIONAL)
NOTE 5
4X
0.27
0.17
0.32
3X
0.23
0.27
0.17
0.1 C A
0.05 C
B
4218860/A 12/2015
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. The package thermal pad must be soldered to the printed circuit board for thermal and mechanical performance.
4. The size and shape of this feature may vary.
5. Features may not exist. Recommend use of pin 1 marking on top of package for orientation purposes.
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EXAMPLE BOARD LAYOUT
DPW0004A
X2SON - 0.4 mm max height
PLASTIC SMALL OUTLINE - NO LEAD
(0.78)
SYMM
4X (0.42)
( 0.1)
VIA
0.05 MIN
ALL AROUND
TYP
1
4
4X (0.22)
5
SYMM
4X (0.26)
(0.48)
2
3
(R0.05) TYP
4X (0.06)
( 0.25)
LAND PATTERN EXAMPLE
SOLDER MASK
OPENING, TYP
METAL UNDER
SOLDER MASK
TYP
SOLDER MASK DEFINED
SCALE:60X
4218860/A 12/2015
NOTES: (continued)
6. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature
number SLUA271 (www.ti.com/lit/slua271).
7. Vias are optional depending on application, refer to device data sheet. If some or all are implemented, recommended via locations are shown.
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EXAMPLE STENCIL DESIGN
DPW0004A
X2SON - 0.4 mm max height
PLASTIC SMALL OUTLINE - NO LEAD
4X (0.42)
4X (0.22)
4X (0.06)
4
1
( 0.24)
4X (0.26)
5
SYMM
(0.21)
TYP
(0.48)
SOLDER MASK
EDGE
2
3
(R0.05) TYP
SYMM
(0.78)
SOLDER PASTE EXAMPLE
BASED ON 0.1 mm THICK STENCIL
EXPOSED PAD 5:
92% PRINTED SOLDER COVERAGE BY AREA
SCALE:100X
4218860/A 12/2015
NOTES: (continued)
8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
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PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
TPD4E6B06DPWR
ACTIVE
X2SON
DPW
4
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
(B1, B5)
B2
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
