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TPD4F003, TPD6F003, TPD8F003
SLLS907E – AUGUST 2008 – REVISED AUGUST 2014
TPDxF003 Four-, Six-, and Eight-Channel EMI Filters With Integrated ESD Protection
1 Features
3 Description
•
The TPDxF003 family is a series of highly integrated
devices designed to provide Electromagnetic
Interference (EMI) filtering in all systems subjected to
electromagnetic interference. These filters also
provide a Transient Voltage Suppressor (TVS) diode
circuit for Electrostatic Discharge (ESD) protection
which prevents damage to the application when
subjected to ESD stress far exceeding IEC 61000-4-2
(Level 4).
1
•
•
•
•
•
•
Four-, Six-, and Eight-Channel EMI Filtering for
Data Ports
–3 dB Bandwidth of 200 MHz
Greater than 25 dB attenuation at 1 GHz
IEC 61000-4-2 Level 4 ESD Protection
– ±12-kV Contact Discharge
– ±20-kV Air Gap Discharge
Pi-Style (C-R-C) Filter Configuration
(R = 100 Ω, CTOTAL = 17 pF)
Low 10-nA Leakage Current
Easy Flow-Through Routing
The TPDxF003 family is specified for –40°C to 85°C
operation. These filters are also packaged in spacesaving 0.4-mm pitch DQD packages.
Device Information(1)
PACKAGE
BODY SIZE (NOM)
TPD4F003
PART NUMBER
WSON (8)
1.70 mm x 1.35 mm
TPD6F003
WSON (12)
2.50 mm x 1.35 mm
TPD8F003
WSON (16)
3.30 mm x 1.35 mm
2 Applications
•
•
•
•
•
Display Interfaces
Cell Phones
Tablets
SVGA Video Connections
Memory Interfaces
(1) For all available packages, see the orderable addendum at
the end of the datasheet.
Equivalent Schematic
100 Ω
Ch_In
8.5 pF
Ch_Out
8.5 pF
GND
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TPD4F003, TPD6F003, TPD8F003
SLLS907E – AUGUST 2008 – REVISED AUGUST 2014
www.ti.com
Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
6.1
6.2
6.3
6.4
6.5
6.6
4
4
4
4
4
5
Absolute Maximum Ratings .....................................
Handling Ratings.......................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Typical Characteristics ..............................................
Detailed Description .............................................. 7
7.1 Overview ................................................................... 7
7.2 Functional Block Diagram ......................................... 7
7.3 Feature Description................................................... 7
7.4 Device Functional Modes.......................................... 8
8
Applications and Implementation ........................ 9
8.1 Application Information.............................................. 9
8.2 Typical Application .................................................... 9
9 Power Supply Recommendations...................... 11
10 Layout................................................................... 11
10.1 Layout Guidelines ................................................. 11
10.2 Layout Example .................................................... 11
11 Device and Documentation Support ................. 12
11.1
11.2
11.3
11.4
Related Links ........................................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
12
12
12
12
12 Mechanical, Packaging, and Orderable
Information ........................................................... 12
4 Revision History
Changes from Revision D (January 2010) to Revision E
•
2
Page
Added Handling Rating table, Feature Description section, Device Functional Modes, Application and
Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation
Support section, and Mechanical, Packaging, and Orderable Information section ............................................................... 1
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SLLS907E – AUGUST 2008 – REVISED AUGUST 2014
5 Pin Configuration and Functions
DQD PACKAGE
(TOP VIEW)
TPD4F003
TPD6F003
TPD8F003
Ch1_Out
Ch1_In
1
12
Ch1_Out
Ch1_In
1
16
Ch1_Out
Ch2_In
2
7
Ch2_Out
Ch2_In
2
11
Ch2_Out
Ch2_In
2
15
Ch2_Out
Ch3_In
3
6
Ch3_Out
Ch3_In
3
10
Ch3_Out
Ch3_In
3
14
Ch3_Out
Ch4_In
4
5
Ch4_Out
Ch4_In
4
9
Ch4_Out
Ch4_In
4
13
Ch4_Out
Ch5_In
5
8
Ch5_Out
Ch5_In
5
12
Ch5_Out
Ch6_In
6
7
Ch6_Out
Ch6_In
6
11
Ch6_Out
Ch7_In
7
10
Ch7_Out
Ch8_In
8
9
Ch8_Out
1.7 mm x 1.35 mm x 0.75 mm
(0.4-mm pitch)
2.5 mm x 1.35 mm x 0.75 mm
(0.4-mm pitch)
GND
8
GND
1
GND
Ch1_In
3.3 mm x 1.35 mm x 0.75 mm
(0.4-mm pitch)
Pin Functions - TPD4F003
PIN
I/O
DESCRIPTION
1, 2, 3, 4
IO
ESD-protected channel, connected to corresponding ChX_Out
5, 6, 7, 8
IO
ESD-protected channel, connected to corresponding ChX_In
GND
G
Ground
NAME
No.
ChX_In
ChX_Out
GND
Pin Functions - TPD6F003
PIN
Name
No.
I/O
Description
ChX_In
1, 2, 3, 4, 5, 6
IO
ESD-protected channel, connected to corresponding ChX_Out
ChX_Out
7, 8, 9, 10, 11,
12
IO
ESD-protected channel, connected to corresponding ChX_In
GND
G
Ground
GND
Pin Functions - TPD8F003
PIN
Name
No.
I/O
Description
ChX_In
1, 2, 3, 4, 5, 6,
7, 8
IO
ESD-protected channel, connected to corresponding ChX_Out
ChX_Out
9, 10, 11, 12,
13, 14, 15, 16
IO
ESD-protected channel, connected to corresponding ChX_In
GND
G
Ground
GND
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6 Specifications
6.1 Absolute Maximum Ratings (1)
over operating free-air temperature range (unless otherwise noted)
MIN
VIO
IO to GND
TJ
Junction temperature
(1)
MAX
UNIT
6
V
150
°C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the
specifications is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device reliability.
6.2 Handling Ratings
Tstg
Storage temperature range
MIN
MAX
UNIT
–65
150
°C
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all
pins (1)
V(ESD)
(1)
(2)
Electrostatic discharge
±15
Charged device model (CDM), per JEDEC specification
JESD22-C101, all pins (2)
kV
±1500
IEC 61000-4-2 ESD Rating - Contact
±12
IEC 61000-4-2 ESD Rating - Air
±20
V
kV
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
0
5.5
V
–40
85
°C
VIO
TA
UNIT
6.4 Thermal Information
TPD4F003
TPD6F003
THERMAL METRIC (1)
TPD8F003
DQD
UNIT
8 PINS
12 PINS
16 PINS
RθJA
Junction-to-ambient thermal resistance
115.6
89.2
80.8
RθJC(top)
Junction-to-case (top) thermal resistance
108.5
100.1
88.3
RθJB
Junction-to-board thermal resistance
66.4
50.5
45.8
ψJT
Junction-to-top characterization parameter
6.8
9.4
9.2
ψJB
Junction-to-board characterization parameter
65.9
50.0
45.4
RθJC(bot)
Junction-to-case (bottom) thermal resistance
33.2
31.0
31.8
(1)
°C/W
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
6.5 Electrical Characteristics
TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
IIO = 10 μA
TYP (1)
MAX
UNIT
100
115
Ω
VBR
DC breakdown voltage
R
Resistance
C
Capacitance (C1 or C2)
VIO = 2.5 V
8.5
pF
IIO
Channel leakage current
VIO = 3.3 V
10
nA
fC
Cut-off frequency
ZSOURCE = 50 Ω, ZLOAD = 50 Ω
200
MHz
(1)
4
6
85
V
Typical values are at TA = 25°C.
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6.6 Typical Characteristics
6.6.1 IEC Clamping Waveforms
(clamp voltage measured both at Ch_Out and Ch_In)
140
140
120
120
100
100
Ch_In
Ch_Out
Amplitude (V)
Amplitude (V)
Ch_In
60
40
60
40
20
20
0
0
-20
-20
-40
-40
0
25
50
75
100
125
150
175
0
200
25
50
75
125
150
175
200
Figure 2. With 12 kV Contact ESD Stress at Ch_Out
Figure 1. With 8 kV Contact ESD Stress at Ch_Out
40
40
20
20
Ch_In
Ch_In
Ch_Out
0
0
-20
-20
Amplitude (V)
Amplitude (V)
100
Time (ns)
Time (ns)
-40
-60
Ch_Out
-40
-60
-80
-80
-100
-100
-120
-120
-140
-140
0
25
50
75
100
125
150
175
0
200
25
50
75
Figure 3. With -8 kV Contact ESD Stress at Ch_Out
TPD6F003
200
TPD4F003
TPD8F003
3dB drop/Bias of 0.0V
-3dB = 198MHz
Peak/Freq/Db = 2.57/45 GHz/dB
0.0006
0.0004
TPD6F003
3dB drop/Bias of 0.0V
-3dB = 197MHz
Peak/Freq/Db = 2.30/47 GHz/dB
0.0002
Current (mA)
-25
-30
175
0.0008
TPD8F003
-20
150
0.001
0
-15
125
Figure 4. With -12 kV Contact ESD Stress at Ch_Out
-5
-10
100
Time (ns)
Time (ns)
Insertion Loss (dB)
Ch_Out
80
80
TPD4F003
3dB drop/Bias of 0.0V
-3dB = 197MHz
Peak/Freq/Db = 2.25/45 GHz/dB
0
-35
-0.0002
-40
-0.0004
-45
-0.0006
-50
1.00E+06
1.00E+07
1.00E+08
1.00E+09
Frequency (Hz)
1.00E+10
-0.0008
-0.001
-4
-2
0
2
4
6
8
Voltage (V)
Figure 5. Frequency Response
Figure 6. DC Voltage-Current Sweep Across Input/Output
Pins
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6.6.2 Channel-to-Channel Crosstalk
0
0
-5
-10
-5
Adjacent Signal Pair
Farthest Signal Pair
-15
-20
-25
-30
-30
-35
-40
-40
-45
-50
Crosstalk (dB)
Crosstalk (dB)
Farthest Signal Pair
-25
-35
-55
-60
-65
-70
-75
-45
-50
-55
-60
-65
-70
-75
-80
-80
-85
-85
-90
-90
-95
-95
-100
-100
-105
-105
-110
-110
1.00E+05
Adjacent Signal Pair
-10
-15
-20
1.00E+06
1.00E+07
1.00E+08
1.00E+09
1.00E+10
1.00E+05
1.00E+06
1.00E+07
Frequency (Hz)
1.00E+08
1.00E+09
1.00E+10
Frequency (Hz)
Figure 8. TPD6F003
Figure 7. TPD4F003
0
-5
-10
Adjacent Signal pair
Farthest Signal Pair
-15
-20
-25
-30
-35
Crosstalk (dB)
-40
-45
-50
-55
-60
-65
-70
-75
-80
-85
-90
-95
-100
-105
-110
1.00E+05
1.00E+06
1.00E+07
1.00E+08
1.00E+09
1.00E+10
Frequency (Hz)
Figure 9. TPD8F003
6
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7 Detailed Description
7.1 Overview
The TPDxF003 family is a series of highly integrated devices designed to provide EMI filtering in all systems
subjected to electromagnetic interference. These filters also provide a Transient Voltage Suppressor (TVS) diode
circuit for ESD protection which prevents damage to the application when subjected to ESD stress far exceeding
IEC 61000-4-2 (Level 4).
7.2 Functional Block Diagram
100 Ω
Ch_In
8.5 pF
Ch_Out
8.5 pF
GND
7.3 Feature Description
The TPDxF003 family is a line of ESD and EMI filtering devices designed to reduce EMI emissions and provide
system level ESD protection. Each device can dissipate ESD strikes above the maximum level specified by IEC
61000-4-2 international standard. Additionally, the EMI filtering structure reduces EMI emissions by providing
high frequency roll-off.
7.3.1 Four-, Six-, and Eight-Channel EMI Filtering for Data Ports
These devices provide EMI filtering for four, six, or eight channels of data lines.
7.3.2 –3 dB Bandwidth of 200 MHz
These devices have a through –3dB bandwidth of 200 MHz.
7.3.3 Greater Than 25 dB Attenuation at 1 GHz
Signal attenuation is above 25dB at 1 GHz, which provides significant reduction in spurious emissions.
7.3.4 Robust ESD Protection Exceeds IEC 61000-4-2
The ESD protection on all pins exceeds the IEC 61000-4-2 level 4 standard. Contact ESD is rated at ±12 kV and
Air-gap ESD is rated at ±20 kV.
7.3.5 Pi-Style (C-R-C) Filter Configuration
This family of devices has a pi-style filtering configuration composed of a series resistor and two capacitors in
parallel with the I/O pins. The typical resistor value is 100 Ω and the typical capacitor values are 8.5 pF each.
7.3.6 Low 10-nA Leakage Current
The I/O pins feature an ultra-low leakage current of 10-nA (typical) with a bias of 3.3 V.
7.3.7 Easy Flow-Through Routing
The layout of this device makes it easy to add protection to existing layouts. The packages offer flow-through
routing which requires minimal changes to existing layout for addition of these devices.
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7.4 Device Functional Modes
The TPDxF003 family of devices are passive integrated circuits that passively filter EMI and trigger when
voltages are above VBR or below the lower diode voltage (–0.6 V). During ESD events, voltages as high as ±20
kV (air) can be directed to ground via the internal diode network. Once the voltages on the protected line fall
below the trigger levels, the device reverts to passive.
8
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8 Applications and Implementation
8.1 Application Information
The TPDxF003 family are diode type TVS' integrated with series resistors for filtering emitted EMI. As signal
passes through the device, higher frequency components are filtered out. This device also provides a path to
ground during ESD events and isolates the protected IC. As the current from ESD passes through the TVS, only
a small voltage drop is present across the diode. This is the voltage presented to the protected IC. In particular,
these filters are ideal for EMI filtering and protecting data lines from ESD at the display, keypad, and memory
interfaces.
8.2 Typical Application
TPD6F003
R0
1
12
R1
2
11
R2
3
10
R3
4
9
R4
5
8
R5
6
7
Display Panel Connector
G0
1
12
G1
2
11
G2
3
10
G3
4
9
G4
5
8
G5
6
7
TPD6F003
Connector
TPD6F003
GND
GND
B0
1
12
B1
2
11
B2
3
10
B3
4
9
B4
5
8
B5
6
7
GND
Figure 10. Display Panel Schematic
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Typical Application (continued)
8.2.1 Design Requirements
For this design example, three TPD6F003 devices are used in an 18-bit display panel application. This will
provide a complete ESD and EMI protection solution for the display connector.
Given the display panel application, the following parameters are known.
DESIGN PARAMETER
VALUE
Signal range on all pins except GND
0 V to 5 V
Operating Frequency
100 MHz
8.2.2 Detailed Design Procedure
To begin the design process, some design parameters must be decided; the designer need to know the
following:
•
•
Signal range on all the protected lines
Operating frequency
8.2.2.1 Signal Range on All Protected Lines
The TPD6F003 has 8 identical protection channels for signal lines. All I/O pins will support a signal range from 0
to 5.5 V.
8.2.2.2 Operating Frequency
The TPD6F003 has a 200 MHz –3dB bandwidth, which supports the operating frequency for this display.
8.2.3 Application Curve
0
±5
Insertion Loss (dB)
±10
±15
±20
Channel 1
±25
Channel 2
±30
Channel 3
±35
Channel 4
±40
Channel 5
±45
Channel 6
±50
1.E+05
1.E+06
1.E+07
1.E+08
1.E+09
1.E+10
Frequency (Hz)
C001
Figure 11. Frequency Response
10
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9 Power Supply Recommendations
This family of devices are passive EMI and ESD devices so there is no need to power them. Care should be
taken to not violate the recommended VIO specification (5.5 V) to ensure the device functions properly.
10 Layout
10.1 Layout Guidelines
•
•
•
The optimum placement is as close to the connector as possible.
– EMI during an ESD event can couple from the trace being struck to other nearby unprotected traces,
resulting in early system failures.
– The PCB designer needs to minimize the possibility of EMI coupling by keeping any unprotected traces
away from the protected traces which are between the TVS and the connector.
Route the protected traces as straight as possible.
Eliminate any sharp corners on the protected traces between the TVS and the connector by using rounded
corners with the largest radii possible.
– Electric fields tend to build up on corners, increasing EMI coupling.
10.2 Layout Example
This application is typical of an 18-bit RGB display panel layout.
VIA to GND Plane
B5
B4
B3
B2
B1
B0
G5
G4
G3
G2
G1
G0
R5
R4
R3
R2
R1
R0
6
5
4
3
2
1
6
5
4
3
2
1
6
5
4
3
2
1
11
12
GND
GND
GND
10
9
8
7
12
11
10
9
8
7
12
11
10
9
8
7
Figure 12. TPD6F003 Layout
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11 Device and Documentation Support
11.1 Related Links
The table below lists quick access links. Categories include technical documents, support and community
resources, tools and software, and quick access to sample or buy.
Table 1. Related Links
PARTS
PRODUCT FOLDER
SAMPLE & BUY
TECHNICAL
DOCUMENTS
TOOLS &
SOFTWARE
SUPPORT &
COMMUNITY
TPD4F003
Click here
Click here
Click here
Click here
Click here
TPD6F003
Click here
Click here
Click here
Click here
Click here
TPD8F003
Click here
Click here
Click here
Click here
Click here
11.2 Trademarks
All trademarks are the property of their respective owners.
11.3 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
11.4 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
12
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PACKAGE OPTION ADDENDUM
www.ti.com
13-May-2021
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
TPD4F003DQDR
ACTIVE
WSON
DQD
8
3000
RoHS & Green
NIPDAUAG
Level-1-260C-UNLIM
-40 to 85
5RS
TPD6F003DQDR
ACTIVE
WSON
DQD
12
3000
RoHS & Green
NIPDAUAG
Level-1-260C-UNLIM
-40 to 85
47S
TPD8F003DQDR
ACTIVE
WSON
DQD
16
3000
RoHS & Green
NIPDAUAG
Level-1-260C-UNLIM
-40 to 85
(5US, 5UU)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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