Product
Folder
Sample &
Buy
Support &
Community
Tools &
Software
Technical
Documents
TPD4S009, TPD4S010
SLVS817G – MAY 2008 – REVISED JUNE 2015
TPD4S009 4-Channel ESD Solution for High-Speed Differential Interface
1 Features
3 Description
•
The TPD4S009 and TPD4S010 are four-channel TVS
diode arrays for electrostatic discharge (ESD)
protection. TPD4S009 and TPD4S010 are rated to
dissipate contact ESD strikes at the maximum level
specified in the IEC 61000-4-2 international standard
(Level 4), with ±8-kV contact discharge ESD
protection. The low capacitance (0.8-pF) of these
devices, coupled with the excellent matching between
differential signal pairs (0.05-pF line-line capacitance
for the TPD4S009DRY) enables this device to
provide transient voltage suppression circuit
protection for high-speed differential data rates (3-dB
bandwidth > 4 GHz).
1
•
•
•
•
•
•
•
•
IEC 61000-4-2 Level 4 ESD Protection
– ±8-kV Contact Discharge
IEC 61000-4-5 Surge Protection
– 2.5A (8/20µs)
I/O Capacitance: 0.8 pF (Typical)
Low Leakage Current: 10 nA (Typical)
Supports High-Speed Differential Data Rates
(3-dB Bandwidth > 4 GHz)
Ultra-low Matching Capacitance Between
Differential Signal Pairs
Ioff Feature for the TPD4S009
Industrial Temperature Range:
–40°C to 85°C
Easy Straight through Routing, Space-Saving
Package Options
2 Applications
•
•
End Equipment
– Set-Top Boxes
– DTVs
– Laptop/Desktop
– Electronic Point of Sale (EPOS)
Interfaces
– USB 2.0
– HDMI 1.4
– LVDS
– SATA
– Ethernet
– FireWire
The TPD4S009 is offered in DBV, DCK, DGS, and
DRY packages. The TPD4S009DRYR is the most
space saving package option available for dual pair
high-speed differential lines. The TPD4S010 is
offered in the industry standard DQA package. The
TPD4S009DGSR and TPD4S010DQAR offer flowthrough board layout options to reduce signal glitches
normally caused by routing mismatches between the
D+ and D- signal pair. See also TPD4E05U06DQAR
which is P2P compatible with TPD4S010DQAR. This
device offers higher IEC ESD protection, lower
capacitance, lower RDYN, lower DC breakdown
voltage, and lower clamping voltage.
Device Information(1)
PART NUMBER
PACKAGE
SOT (6)
TPD4S009
TPD4S010
BODY SIZE (NOM)
2.90 mm × 1.60 mm
2.00 mm × 1.25 mm
VSSOP (10)
3.00 mm × 3.00 mm
USON (6)
1.45 mm × 1.00 mm
USON (10)
2.50 mm × 1.00 mm
(1) For all available packages, see the orderable addendum at
the end of the datasheet.
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TPD4S009, TPD4S010
SLVS817G – MAY 2008 – REVISED JUNE 2015
www.ti.com
Simplified Schematic
VBUS
TPD4S010DQA
DD+
GND
TPD4S010DQA
D1D1+
USB
Controller
VBUS
D2-
D2+
DD+
GND
2
GND
Submit Documentation Feedback
Copyright © 2008–2015, Texas Instruments Incorporated
Product Folder Links: TPD4S009 TPD4S010
TPD4S009, TPD4S010
www.ti.com
SLVS817G – MAY 2008 – REVISED JUNE 2015
Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
3
4
5
6.1
6.2
6.3
6.4
6.5
6.6
5
5
6
6
6
7
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Typical Characteristics ..............................................
Detailed Description .............................................. 8
7.1 Overview ................................................................... 8
7.2 Functional Block Diagram ......................................... 8
7.3 Feature Description................................................... 9
7.4 Device Functional Modes.......................................... 9
8
Application and Implementation ........................ 10
8.1 Application Information............................................ 10
8.2 Typical Application ................................................. 10
9 Power Supply Recommendations...................... 12
10 Layout................................................................... 12
10.1 Layout Guidelines ................................................. 12
10.2 Layout Example .................................................... 12
11 Device and Documentation Support ................. 13
11.1
11.2
11.3
11.4
Documentation Support ........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
13
13
13
13
12 Mechanical, Packaging, and Orderable
Information ........................................................... 13
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision F (August 2013) to Revision G
•
Page
Added Pin Configuration and Functions section, ESD Ratings table, Feature Description section, Device Functional
Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device
and Documentation Support section, and Mechanical, Packaging, and Orderable Information section .............................. 1
Changes from Revision E (December 2011) to Revision F
•
Page
Removed Ordering Information table. .................................................................................................................................... 5
Copyright © 2008–2015, Texas Instruments Incorporated
Product Folder Links: TPD4S009 TPD4S010
Submit Documentation Feedback
3
TPD4S009, TPD4S010
SLVS817G – MAY 2008 – REVISED JUNE 2015
www.ti.com
5 Pin Configuration and Functions
TPD4S009 DBV OR DCK PACKAGE
6-PIN SOT
TOP VIEW
D1+
1
6
D1–
GND
2
5
VCC
D2+
3
4
D2–
TPD4S009 DGS PACKAGE
10-PIN VSSOP
TOP VIEW
D1+
1
10
N.C.
D1–
2
9
N.C.
GND
3
8
VCC
D2+
4
7
N.C.
D2–
5
6
N.C.
TPD4S010 DQA PACKAGE
10-PIN USON
TOP VIEW
D1+
1
10
N.C.
D1–
2
9
N.C.
GND
3
8
GND
D2+
4
7
N.C.
D2–
5
6
N.C.
TPD4S009 DRY PACKAGE
6-PIN USON
TOP VIEW
D1+
1
6
D1–
GND
2
5
VCC
D2+
3
4
D2–
Pin Functions
PIN
SOT or
USON
VSSOP
USON
D1+
1
1
1
D1–
6
2
2
D2+
3
4
4
D2–
4
5
5
NAME
4
Submit Documentation Feedback
I/O
DESCRIPTION
ESD port
High-speed ESD clamp provides ESD protection to the highspeed differential data lines.
Copyright © 2008–2015, Texas Instruments Incorporated
Product Folder Links: TPD4S009 TPD4S010
TPD4S009, TPD4S010
www.ti.com
SLVS817G – MAY 2008 – REVISED JUNE 2015
Pin Functions (continued)
PIN
NAME
SOT or
USON
VSSOP
USON
I/O
GND
2
3
3, 8
GND
N.C.
–
6, 7, 9, 10
6, 7, 9, 10
–
VCC
5
8
–
Power
DESCRIPTION
Ground
Not internally connected
Supply
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
UNIT
–0.3
6
V
0
VCC
V
–40
85
°C
260
°C
Peak pulse power (tp = 8/20 μs)
25
W
Peak pulse current (tp = 8/20 μs)
2.5
A
125
°C
VCC
Supply voltage range for TPD4S009
VIO
IO signal voltage range
TA
Characterized free-air operating temperature range
Lead temperature, 1.6 mm (1/16 in) from case for 10 s)
Tstg
Storage temperature range
–65
6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
±2500
Charged-device model (CDM), per JEDEC specification JESD22C101 (2)
±1500
IEC 61000-4-2 Contact Discharge
±8000
IEC 61000-4-2 Air-Gap Discharge
±9000
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
Copyright © 2008–2015, Texas Instruments Incorporated
Product Folder Links: TPD4S009 TPD4S010
Submit Documentation Feedback
5
TPD4S009, TPD4S010
SLVS817G – MAY 2008 – REVISED JUNE 2015
www.ti.com
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
TA Operating free-air Temperature
Range
NOM
MAX
-40
VCC Pin
Operating Voltage
UNIT
85
0.9
5.5
IOx Pin (TPD4S009)
0
VCC
IOx Pin (TPD4S010)
0
5.5
°C
V
6.4 Thermal Information
TPD4S009
THERMAL METRIC
(1)
DBV
(SOT)
TPD4S010
DCK (SOT)
DGS
(VSSOP)
DRY (USON)
DQA (USON)
6 PINS
6 PINS
10 PINS
6 PINS
10 PINS
UNIT
RθJA
Junction-to-ambient thermal resistance
201.7
254.4
205.0
380.55
265.3
°C/W
RθJC(to
Junction-to-case (top) thermal resistance
175.0
123.9
76.1
229.07
129.4
°C/W
RθJB
Junction-to-board thermal resistance
47.6
94.0
126.0
235.57
189.7
°C/W
ψJT
Junction-to-top characterization parameter
52.8
14.5
9.4
56.76
31.1
°C/W
ψJB
Junction-to-board characterization parameter
47.1
92.3
124.3
232.80
189.7
°C/W
RθJC(b
Junction-to-case (bottom) thermal resistance
N/A
N/A
N/A
91.03
N/A
°C/W
p)
ot)
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
6.5 Electrical Characteristics
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VRWM
Reverse standoff voltage
Any IO pin to ground
VBR
Breakdown voltage
IIO = 1 mA
Any IO pin to ground
IIO
IO port current
VIO = 3.3 V, VCC = 5 V
Any IO pin
0.01
0.1
μA
Ioff
Current from IO port to supply pins
VIO = 3.3 V, VCC = 5 V
Any IO pin
0.01
0.1
μA
VD
Diode forward voltage
IIO = 8 mA
Lower clamp diode
0.8
0.95
V
RDYN
Dynamic resistance
I=1A
Any IO pin
1.1
Ω
CIO
IO capacitance
VCC = 5 V, VIO = 2.5 V
Any IO pin
0.8
pF
ICC
Operating supply current
VIO = Open, VCC = 5 V
VCC pin
0.1
6
Submit Documentation Feedback
5.5
9
0.6
V
V
1
μA
Copyright © 2008–2015, Texas Instruments Incorporated
Product Folder Links: TPD4S009 TPD4S010
TPD4S009, TPD4S010
www.ti.com
SLVS817G – MAY 2008 – REVISED JUNE 2015
6.6 Typical Characteristics
2
70
D1+
D2+
-2
60
Leakage Current (pA)
Insertion Loss (dB)
0
-4
-6
50
40
30
20
-8
10
0
-10
100k
1.E+05
1M
1.E+06
10M
1.E+07
100M
1.E+08
1G
1.E+09
Frequency (Hz)
55
25
Temperature, TA (°C)
–40
10G
1.E+10
85
VIO = 2.5 V
Figure 1. Insertion Loss S21 – I/O to GND
Figure 2. Leakage Current vs Temperature
220
5.0
200
180
160
140
3.0
Amplitude (V)
IO Capacitance (pF)
4.0
2.0
1.0
120
100
80
60
40
20
0
0.0
3
2
–20
5
4
0
25
50
75
100 125 150 175 200 225 250
Time (nS)
IO Voltage (V)
VCC = 5 V
8-kV Contact, Average of Ten Waveforms
Figure 4. IEC Clamping Waveforms
IPP (A)
Figure 3. IO Capacitance vs Input Voltage
3.0
30
2.5
25
2.0
20
Current (A)
1.5
15
1.0
10
PPP (W)
1
Power (W)
5
0.5
0.0
0
0
5
10
15
20
25 30 35
Time (µs)
40
45
50
8/20 μs Pulse
Figure 5. Pulse Waveform
Copyright © 2008–2015, Texas Instruments Incorporated
Product Folder Links: TPD4S009 TPD4S010
Submit Documentation Feedback
7
TPD4S009, TPD4S010
SLVS817G – MAY 2008 – REVISED JUNE 2015
www.ti.com
7 Detailed Description
7.1 Overview
The TPD4S009 and TPD4S010 are four-channel TVS diode arrays for electrostatic discharge (ESD) protection.
TPD4S009 and TPD4S010 are rated to dissipate contact ESD strikes at the maximum level specified in the IEC
61000-4-2 international standard (Level 4), with ±8-kV contact discharge ESD protection. The low 0.8 pF
capacitance of these devices, coupled with the excellent matching between differential signal pairs (0.05-pF lineline capacitance for the TPD4S009DRY) enables this device to operate at high-speed differential data rates (3dB bandwidth > 4 GHz).
The TPD4S009 offers an optional VCC supply pin which can be connected to system supply plane. There is a
blocking diode at the VCC pin to enable the Ioff feature for the TPD4S009. The TPD4S009 can handle live signal
at the D+, D- pins when the VCC pin is connected to zero volt. The VCC pin allows all the internal circuit nodes of
the TPD4S009 to be at known potential during start up time. However, connecting the optional VCC pin to board
supply plane doesn't affect the system level ESD performance of the TPD4S009. The TPD4S010 does not offer
the VCC pin.
7.2 Functional Block Diagram
VCC
D2+
D1+
D1–
D2–
GND
Figure 6. TPD4S009
D1+
D2+
D1–
D2–
GND
Figure 7. TPD4S010
8
Submit Documentation Feedback
Copyright © 2008–2015, Texas Instruments Incorporated
Product Folder Links: TPD4S009 TPD4S010
TPD4S009, TPD4S010
www.ti.com
SLVS817G – MAY 2008 – REVISED JUNE 2015
7.3 Feature Description
7.3.1 ±8-kV IEC61000-4-2 Level 4 Contact ESD Protection
The I/O pins can withstand ESD events up to ±8-kV contact and ±9-kV air. An ESD/surge clamp diverts the
current to ground.
7.3.2 IEC61000-4-5 Surge Protection
The I/O pins can withstand surge events up to 2.5 A and 25 W (8/20 µs waveform). An ESD/surge clamp diverts
this current to ground.
7.3.3 I/O Capacitance
The capacitance between each I/O pin to ground is 0.8 pF (typical) for both TPD4S009 and TPD4S010. These
devices support data rates up to 3.4 Gbps.
7.3.4 Low Leakage Current
The I/O pins feature a low leakage current of 10 nA (typical) with an IO bias of 3.3 V and VCC bias of 5V.
7.3.5 Supports High-Speed Differential Data Rates
The I/O pins low capacitance of 0.8 pF (typical) gives them a typical –3 dB bandwidth > 4GHz. This allows
TPD4S009 and TPD4S010 to protect interfaces with high speed signals like HDMI 1.4.
7.3.6 Ultra-low Matching Capacitance Between Differential Signal Pairs
The monolithic silicon technology allows matching between the differential signal pairs. The excellent matching
between the differential pair signal lines (0.05-pF line-line capacitance for the TPD4S009DRY) enables this
device to operate at high-speed differential data rates (3-dB bandwidth > 4 GHz). Excellent matching capacitance
between differential signal pairs is also crucial to minimize the inter-pair and intra-pair skew between differential
signals, which is crucial for many high-speed signal interfaces like HDMI 1.4.
7.3.7 Ioff Feature for the TPD4S009
The TPD4S009 offers an optional VCC supply pin which can be connected to system supply plane. There is a
blocking diode at the VCC pin which makes it so the TPD4S009 can handle live signal at the D+, D- pins when
the VCC pin is connected to zero volt. This is the Ioff feature, which is crucial for HDMI, as a live signal can be put
on the IO pins when the system is powered off. The TPD4S010 does not offer the VCC pin.
7.3.8 Industrial Temperature Range
This device features an industrial operating range of –40°C to 85°C.
7.3.9 Easy Flow-Through Routing
The layout of this device makes it simple and easy to add protection to an existing layout. The packages offers
flow-through routing, requiring minimal modification to an existing layout. Flow-through routing also allows the
PCB designer to optimize the signal integrity of any high-speed signals being protected.
7.4 Device Functional Modes
TPD4S009 and TPD4S010 are passive integrated circuits that trigger when voltages are above VBR or below the
lower diodes Vf (–0.6 V). During ESD events, voltages as high as ±8 kV (contact) can be directed to ground via
the internal diode network. Once the voltages on the protected line fall below the trigger levels of TPD4S009 or
TPD4S010 (usually within 10’s of nano-seconds) the device reverts back to its high-impedance state.
Copyright © 2008–2015, Texas Instruments Incorporated
Product Folder Links: TPD4S009 TPD4S010
Submit Documentation Feedback
9
TPD4S009, TPD4S010
SLVS817G – MAY 2008 – REVISED JUNE 2015
www.ti.com
8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
TPD4S009 and TPD4S010 are four-channel TVS diode arrays which are used to provide IEC 61000-4-2 system
level ESD protection for a human interface connector. TPD4S009 and TPD4S010 provide a path to ground for
dissipating ESD events on hi-speed signal lines between the human interface connector and the system. As the
current from ESD passes through the TVS, only a small voltage drop is present across the diode. This is the
voltage presented to the protected IC. The low RDYN of the triggered TVS holds this voltage, VCLAMP, to a safe
level for the protected IC.
8.2 Typical Application
TPD4S010DQA
HOT PLUG 1
UTILITY 2
D2+
1
10
D2-
2
9
3
8
4
7
5
6
UTI_CON
TMDS D2+ 3
D1+
TMDS_GND 4
D1-
D2+
D2-
5V Source
D1+
D1-
TMDS D2- 5
HDMI Connector
TMDS D1+ 6
TPD4S010DQA
TMDS_GND 7
TMDS D1- 8
1
10
D0-
2
9
3
8
4
7
CLK+
5
6
CLK-
TMDS D0+ 9
TMDS_GND 10
CLK+
TMDS D0- 11
D0+
D0+
CLK-
TMDS CLK+ 12
TMDS_GND 13
D0-
TPD5S116YFF
TMDS CLK- 14
CEC 15
CEC_CON
DDC/CEC GND 16
SCL_CON
SCL_SYS
SCL 17
SDA_CON
SDA_SYS
SDA 18
EN
P 5V0 19
VCCA
5V_SYS
5V_CON
GND 20
0.1 µF
HDMI Controller
CEC_SYS
HPD_CON
UTI_CON
HPD_SYS
GND
0.1 µF
UTI_CON
Figure 8. Typical Application Schematic
10
Submit Documentation Feedback
Copyright © 2008–2015, Texas Instruments Incorporated
Product Folder Links: TPD4S009 TPD4S010
TPD4S009, TPD4S010
www.ti.com
SLVS817G – MAY 2008 – REVISED JUNE 2015
Typical Application (continued)
8.2.1 Design Requirements
For this design example, two TPD4S010 devices, and one TPD5S116 are being used in an HDMI 1.4
application. This will provide a complete port protection scheme.
Given the HDMI 1.4 application, the following parameters are known.
DESIGN PARAMETER
VALUE
Signal range on Pins 1, 2, 4, or 5
0 V to 3.6 V
Operating Frequency
1.7 GHz
8.2.2 Detailed Design Procedure
To begin the design process, some parameters must be decided upon; the designer needs to know the following:
• Signal range on all the protected lines
• Operating frequency
8.2.2.1 Signal Range on Pin 1, 2, 4, or 5
TPD4S010 has 4 identical protection channels for signal lines. The symmetry of the device provides flexibility
when selecting which of the 4 I/O channels will protect which signal lines. Any I/O will support a signal range of 0
to 5.5 V. Therefore, this device will support the HDMI 1.4 signal swing.
8.2.2.2 Bandwidth on Pin 1, 2, 4, or 5
Each pin of the TPD4S010 has a typical –3 dB bandwidth of 4GHz. Therefore, this device can handle HDMI 1.4
data rate of 3.4 Gbps with operating frequency of 1.7 GHz.
8.2.3 Application Curves
Figure 9 and Figure 10 are HDMI eye diagram measurements for the TPD4S009. The same eye diagram
performance is expected for the TPD4S010.
Figure 9. Eye Diagram Without TPD4S009
Figure 10. Eye Diagram With TPD4S009
Copyright © 2008–2015, Texas Instruments Incorporated
Product Folder Links: TPD4S009 TPD4S010
Submit Documentation Feedback
11
TPD4S009, TPD4S010
SLVS817G – MAY 2008 – REVISED JUNE 2015
www.ti.com
9 Power Supply Recommendations
TPD4S009 and TPD4S010 are passive TVS diodes and so there is no requirement to power them. They are fully
functional without any power supply. However, TPD4S009 does provide an option to apply a DC voltage to its
VCC pin, whose purpose is to bias the internal central clamp and insure a known voltage on all internal nodes
during startup time. This feature is optional, and whether or not a DC voltage is applied to VCC does not affect the
ESD performance of this device.
10 Layout
10.1 Layout Guidelines
•
•
•
The optimum placement is as close to the connector as possible.
– EMI during an ESD event can couple from the trace being struck to other nearby unprotected traces,
resulting in early system failures.
– The PCB designer needs to minimize the possibility of EMI coupling by keeping any unprotected traces
away from the protected traces which are between the TVS and the connector.
Route the protected traces as straight as possible.
Eliminate any sharp corners on the protected traces between the TVS and the connector by using rounded
corners with the largest radii possible.
– Electric fields tend to build up on corners, increasing EMI coupling.
10.2 Layout Example
This is a layout example for TPD4S010 being used to protect HDMI TMDS Lines.
Clk+
Clk-
D0+
D0-
D1+
D1-
D2+
D2-
VIA to GND Plane
D0+
NC
NC
NC
D1-
NC
D0-
D0+
NC
GND
D0-
GND
GND
GND
NC
NC
D1+
NC
D1+
D1-
Figure 11. TPD4S010 Layout
12
Submit Documentation Feedback
Copyright © 2008–2015, Texas Instruments Incorporated
Product Folder Links: TPD4S009 TPD4S010
TPD4S009, TPD4S010
www.ti.com
SLVS817G – MAY 2008 – REVISED JUNE 2015
11 Device and Documentation Support
11.1 Documentation Support
11.1.1 Related Documentation
For related information see, SLVSBO7
11.2 Trademarks
All trademarks are the property of their respective owners.
11.3 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
11.4 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
Copyright © 2008–2015, Texas Instruments Incorporated
Product Folder Links: TPD4S009 TPD4S010
Submit Documentation Feedback
13
PACKAGE OPTION ADDENDUM
www.ti.com
20-Jan-2023
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
TPD4S009DBVR
ACTIVE
SOT-23
DBV
6
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
(NFJF, NFJK)
Samples
TPD4S009DBVRG4
ACTIVE
SOT-23
DBV
6
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
(NFJF, NFJK)
Samples
TPD4S009DCKR
ACTIVE
SC70
DCK
6
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
3HR
Samples
TPD4S009DCKRG4
ACTIVE
SC70
DCK
6
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
3HR
Samples
TPD4S009DGSR
ACTIVE
VSSOP
DGS
10
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
3HR
Samples
TPD4S009DRYR
ACTIVE
SON
DRY
6
5000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
3H
Samples
TPD4S010DQAR
ACTIVE
USON
DQA
10
3000
RoHS & Green NIPDAU | NIPDAUAG
Level-1-260C-UNLIM
-40 to 85
(4U7, 4UO, 4UR, 4U
V, BOR)
Samples
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
工商网监
湘ICP备2023018690号
