TPIC6A595DWRG4

    


 SLIS005B − APRIL 1993 − REVISED MAY 2005 D D D D D D D Low rDS(on) . . . 1 Ω Typ Output Short-Circuit Protection Avalanche Energy . . . 75 mJ Eight 350-mA DMOS Outputs 50-V Switching Capability Devices Are Cascadable Low Power Consumption description The TPIC6A595 is a monolithic, high-voltage, high-current power logic 8-bit shift register designed for use in systems that require relatively high load power. The device contains a built-in voltage clamp on the outputs for inductive transient protection. Power driver applications include relays, solenoids, and other medium-current or high-voltage loads. Each open-drain DMOS transistor features an independent chopping current-limiting circuit to prevent damage in the case of a short circuit. NE PACKAGE (TOP VIEW) DRAIN2 DRAIN3 SRCLR G PGND PGND RCK SRCK DRAIN4 DRAIN5 1 20 2 19 3 18 4 17 5 16 6 15 7 14 8 13 9 12 10 11 DRAIN1 DRAN0 SER IN VCC PGND PGND LGND SER OUT DRAIN7 DRAIN6 DW PACKAGE (TOP VIEW) DRAIN2 DRAIN3 SRCLR G PGND PGND PGND PGND RCK SRCK DRAIN4 DRAIN5 1 24 2 23 3 22 4 21 5 20 6 19 DRAIN1 DRAIN0 SER IN VCC PGND PGND PGND PGND LGND SER OUT DRAIN7 DRAIN6 This device contains an 8-bit serial-in, parallel-out 18 7 shift register that feeds an 8-bit, D-type storage 17 8 register. Data transfers through both the shift and 16 9 storage registers on the rising edge of the shift15 10 register clock (SRCK) and the register clock 14 11 (RCK), respectively. The storage register 13 12 transfers data to the output buffer when shiftregister clear (SRCLR) is high. When SRCLR is low, the input shift register is cleared. When output enable (G) is held high, all data in the output buffers is held low and all drain outputs are off. When G is held low, data from the storage register is transparent to the output buffers. The serial output (SER OUT) allows for cascading of the data from the shift register to additional devices. Outputs are low-side, open-drain DMOS transistors with output ratings of 50 V and a 350-mA continuous sink current capability. When data in the output buffers is low, the DMOS-transistor outputs are off. When data is high, the DMOS-transistor outputs have sink current capability. Separate power ground (PGND) and logic ground (LGND) terminals are provided to facilitate maximum system flexibility. All PGND terminals are internally connected, and each PGND terminal must be externally connected to the power system ground in order to minimize parasitic impedance. A single-point connection between LGND and PGND must be made externally in a manner that reduces crosstalk between the logic and load circuits. The TPIC6A595 is offered in a thermally-enhanced dual-in-line (NE) package and a wide-body surface-mount (DW) package. The TPIC6A595 is characterized for operation over the operating case temperature range of −40°C to 125°C. Copyright  1995 − 2005, Texas Instruments Incorporated  
  
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 SLIS005B − APRIL 1993 − REVISED MAY 2005 logic symbol† G EN3 RCK C2 SRCLR SRCK SER IN R SRG8 C1 1D 2 3 DRAIN0 DRAIN1 DRAIN2 DRAIN3 DRAIN4 DRAIN5 DRAIN6 2 3 DRAIN7 SER OUT † This symbol is in accordance with ANSI/IEEE Std 91-1984 and IEC Publication 617-12. 2 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 
    


 SLIS005B − APRIL 1993 − REVISED MAY 2005 logic diagram (positive logic) G DRAIN0 RCK D SRCK C1 SRCLR CLR D C1 D C2 DRAIN1 D C2 DRAIN2 CLR D C1 D C2 CLR D C1 Current Limit and Charge Pump SER IN D C2 CLR D C1 D C2 CLR DRAIN3 DRAIN4 DRAIN5 D C1 D C2 CLR D C1 DRAIN6 D C2 CLR D C1 D C2 DRAIN7 CLR SER OUT POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 PGND 3 
    


 SLIS005B − APRIL 1993 − REVISED MAY 2005 schematic of inputs and outputs TYPICAL OF SERIAL OUT EQUIVALENT OF EACH INPUT VCC TYPICAL OF ALL DRAIN OUTPUTS DRAIN VCC Input SER OUT 25 V 12 V RSENSE LGND LGND PGND LGND absolute maximum ratings over recommended operating case temperature range (unless otherwise noted)† Logic supply voltage, VCC (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V Logic input voltage range, VI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.3 V to 7 V Power DMOS drain-to-source voltage, VDS (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 V Continuous source-drain diode anode current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 A Pulsed source-drain diode anode current (see Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 A Pulsed drain current, each output, all outputs on, IDn, TA = 25°C (see Note 3) . . . . . . . . . . . . . . . . . . . . . 1.1 A Continuous drain current, each output, all outputs on, IDn, TA = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mA Peak drain current, single output, TA = 25°C (see Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1 A Single-pulse avalanche energy, EAS (see Figure 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75 mJ Avalanche current, IAS (see Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600 mA Continuous total dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Dissipation Rating Table Operating case temperature range, TC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40°C to 125°C Operating virtual junction temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40°C to 150°C Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65°C to 150°C Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C † Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTES: 1. All voltage values are with respect to LGND and PGND. 2. Each power DMOS source is internally connected to PGND. 3. Pulse duration ≤ 100 µs and duty cycle ≤ 2 %. 4. DRAIN supply voltage = 15 V, starting junction temperature (TJS) = 25°C, L = 210 mH, IAS = 600 mA (see Figure 6). DISSIPATION RATING TABLE 4 PACKAGE TC ≤ 25°C POWER RATING DERATING FACTOR ABOVE TC = 25°C TC = 125°C POWER RATING DW 1750 mW 14 mW/°C 350 mW NE 2500 mW 20 mW/°C 500 mW POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 
    


 SLIS005B − APRIL 1993 − REVISED MAY 2005 recommended operating conditions MIN Logic supply voltage, VCC MAX 4.5 High-level input voltage, VIH 5.5 0.85 VCC Low-level input voltage, VIL 0 Pulsed drain output current, TC = 25°C, VCC = 5 V (see Notes 3 and 5) UNIT V VCC 0.15 VCC −1.8 0.6 V V A Setup time, SER IN high before SRCK↑, tsu (see Figure 2) 10 ns Hold time, SER IN high after SRCK↑, th (see Figure 2) 10 ns Pulse duration, tw (see Figure 2) 20 Operating case temperature, TC −40 ns °C 125 electrical characteristics, VCC = 5 V, TC = 25°C (unless otherwise noted) PARAMETER TEST CONDITIONS V(BR)DSX Drain-to-source breakdown voltage ID = 1 mA VSD Source-to-drain diode forward voltage IF = 350 mA, VOH High-level output voltage, SER OUT IOH = − 20 µA IOH = − 4 mA VOL Low-level output voltage, SER OUT IOL = 20 µA IOL = 4 mA High-level input current Low-level input current VI = VCC VI = 0 IO(chop) Output current at which chopping starts TC = 25°C, See Note 5 and Figures 3 and 4 ICC Logic supply current ICC(FRQ) Logic supply current at frequency IO = 0, fSRCK = 5 MHz, VI = VCC or 0, VI = VCC or 0 IO = 0, CL = 30 pF, VCC = 5 V, See Figure 7 I(nom) Nominal current I(nom) = ID, TC = 85°C, See Notes 5, 6, and 7 ID Drain current, off-state VDS(on) = 0.5 V, VCC = 5 V, VDS = 40 V, rDS(on) Static drain-source on-state resistance IIH IIL NOTES: 3. 5. 6. 7. VDS = 40 V, ID = 350 mA, ID = 350 mA, ID = 350 mA, MIN TYP MAX 50 See Note 3 TC = 25°C TC = 125°C TC = 25°C See Notes 5 and 6 TC = 125°C and Figures 10 and 11 TC = 40°C V 0.8 VCC −ā 0.1 VCC −ā 0.5 0.6 UNIT 1.1 VCC VCC −ā 0.2 V V 0 0.1 0.2 0.5 V 1 µA −1 µA 0.8 1.1 A 0.5 5 mA 1.3 mA 350 mA 0.1 1 0.2 5 1 1.5 1.7 2.5 µA A Ω Pulse duration ≤ 100 µs and duty cycle ≤ 2%. Technique should limit TJ − TC to 10°C maximum. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts. Nominal current is defined for a consistent comparison between devices from different sources. It is the current that produces a voltage drop of 0.5 V at TC = 85°C. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 5 
    


 SLIS005B − APRIL 1993 − REVISED MAY 2005 switching characteristics, VCC = 5 V, TC = 25°C PARAMETER TEST CONDITIONS tPHL tPLH Propagation delay time, high-to-low-level output from G tr tf Rise time, drain output ta trr Reverse-recovery-current rise time Propagation delay time, low-to-high-level output from G TYP MAX UNIT 30 ns CL = 30 pF, ID = 350 mA, See Figures 1, 2, and 12 125 ns 60 ns 30 ns IF = 350 mA, di/dt = 20 A/µs, See Notes 5 and 6 and Figure 5 100 ns 300 ns Fall time, drain output Reverse-recovery time MIN NOTES: 5. Technique should limit TJ − TC to 10°C maximum. 6. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts. thermal resistance PARAMETER TEST CONDITIONS DW RθJC JC Thermal resistance, junction-to-case RθJA JA Thermal resistance, junction-to-ambient NE 6 MAX 10 All eight outputs with equal power DW NE MIN 10 50 All eight outputs with equal power POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 50 UNIT °C/W °C/W 
    


 SLIS005B − APRIL 1993 − REVISED MAY 2005 PARAMETER MEASUREMENT INFORMATION 24 V 5V 7 6 5 4 3 2 1 0 5V SRCK SRCLR SRCK Word Generator (see Note A) 0V ID VCC DUT Output 5V G RL = 68 Ω 0V 5V 0V 5V SER IN DRAIN SER IN CL = 30 pF (see Note B) RCK RCK 0V 5V SRCLR G 0V LGND PGND 24 V DRAIN 1, 2, 5, 6 TEST CIRCUIT 0.5 V 24 V DRAIN 0, 3, 4, 7 0.5 V VOLTAGE WAVEFORMS NOTES: A. The word generator has the following characteristics: tr ≤ 10 ns, tf ≤ 10 ns, tw = 300 ns, pulsed repetition rate (PRR) = 5 kHz, ZO = 50 Ω. B. CL includes probe and jig capacitance. Figure 1. Resistive Load Operation 5V G 50% 50% 0V 5V SRCLR 24 V tPHL 90% 10% tr DRAIN G 0.5 V tf SWITCHING TIMES Output RCK 24 V 90% 10% RL = 68 Ω DUT SER IN Output ID VCC SRCK Word Generator (see Note A) tPLH 5V CL = 30 pF (see Note B) 50% SRCK 0V tsu th LGND PGND 5V SER IN 50% 50% 0V TEST CIRCUIT tw INPUT SETUP AND HOLD WAVEFORMS NOTES: A. The word generator has the following characteristics: tr ≤ 10 ns, tf ≤ 10 ns, tw = 300 ns, pulsed repetition rate (PRR) = 5 kHz, ZO = 50 Ω. B. CL includes probe and jig capacitance. Figure 2. Test Circuit, Switching Times, and Voltage Waveforms POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 7 
    


 SLIS005B − APRIL 1993 − REVISED MAY 2005 PARAMETER MEASUREMENT INFORMATION OUTPUT CURRENT vs TIME FOR INCREASING LOAD RESISTANCE REGION 1 CURRENT WAVEFORM 1.5 IOK IOK (see Notes A and B) I O − Output Current I O − Output Current − A 1.25 1 0.75 0.5 0 0.25 t1 t2 t1 t2 t1 t1 ≈ 40 µs t2 ≈ 2.5 ms 0 Region 2 Region 1 Time Time First output current pulses after turn-on in chopping mode with resistive load. NOTES: A. Figure 3 illustrates the output current characteristics of the device energizing a load having initially low, increasing resistance, e.g., an incandescent lamp. In region 1, chopping occurs and the peak current is limited to IOK. In region 2, output current is continuous. The same characteristics occur in reverse order when the device energizes a load having an initially high, decreasing resistance. B. Region 1 duty cycle is approximately 2%. Figure 3. Chopping-Mode Characteristics OUTPUT CURRENT LIMIT vs CASE TEMPERATURE 1.5 I O − Output Current Limit − A VCC = 5.5 V 1.2 0.9 VCC = 4.5 V 0.6 0.3 0 − 50 − 25 0 25 50 75 100 125 TC − Case Temperature − °C Figure 4 8 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 150 
    


 SLIS005B − APRIL 1993 − REVISED MAY 2005 PARAMETER MEASUREMENT INFORMATION TP K DRAIN Circuit Under Test 0.35 A 2500 µF 250 V di/dt = 20 A/µs + 24 V L = 1 mH IF (see Note B) IF − 0 TP A 25% of IRM t2 t1 t3 Driver IRM (see Note C) RG VGG (see Note A) ta 50 Ω trr CURRENT WAVEFORM TEST CIRCUIT NOTES: A. The VGG amplitude and RG are adjusted for di/dt = 20 A/µs. A VGG double-pulse train is used to set IF = 0.35 A, where t1 = 10 µs, t2 = 7 µs, and t3 = 3 µs. B. The DRAIN terminal under test is connected to the TP K test point. All other terminals are connected together and connected to the TP A test point. C. IRM = maximum recovery current Figure 5. Reverse-Recovery-Current Test Circuit and Waveforms of Source-Drain Diode 5V 15 V tw V SRCLR CC 1Ω SRCK Word Generator (see Note A) 5V Input ID DUT See Note B 0V IAS = 600 mA 210 mH SER IN tav† ID RCK G DRAIN VDS V(BR)DSX = 50 V MIN LGND PGND VDS VOLTAGE AND CURRENT WAVEFORMS SINGLE-PULSE AVALANCHE ENERGY TEST CIRCUIT † Non JEDEC symbol for avalanche time. NOTES: A. The word generator has the following characteristics: tr ≤ 10 ns, tf ≤ 10 ns, ZO = 50 Ω. B. Input pulse duration, tw, is increased until peak current IAS = 600 mA. Energy test level is defined as EAS = (IAS × V(BR)DSX × tav)/2 = 75 mJ. Figure 6. Single-Pulse Avalanche Energy Test Circuit and Waveforms POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 9 
    


 SLIS005B − APRIL 1993 − REVISED MAY 2005 TYPICAL CHARACTERISTICS MAXIMUM CONTINUOUS DRAIN CURRENT OF EACH OUTPUT vs NUMBER OF OUTPUTS CONDUCTING SIMULTANEOUSLY SUPPLY CURRENT vs FREQUENCY 0.7 4 ID − Maximum Continuous Drain Current of Each Output − A I CC − Supply Current − mA 3.5 VCC = 5 V TJS = − 40°C to 125°C 3 2.5 2 1.5 1 0.5 0 0.1 1 10 VCC = 5 V 0.6 TA = 25°C 0.5 0.4 TA = 100°C 0.3 0.2 TA = 125°C 0.1 0 100 1 2 3 4 5 6 7 8 N − Number of Outputs Conducting Simultaneously f − Frequency − MHz Figure 8 MAXIMUM PEAK DRAIN CURRENT OF EACH OUTPUT vs NUMBER OF OUTPUTS CONDUCTING SIMULTANEOUSLY 0.9 0.8 d = 50% d = 20% 0.7 0.6 0.5 d = 80% 0.4 0.3 0.2 0.1 VCC = 5 V TA = 25°C d = tw/tperiod d = 1 ms/tperiod 0 1 2 3 4 5 6 7 8 N − Number of Outputs Conducting Simultaneously STATIC DRAIN-SOURCE ON-STATE RESISTANCE vs DRAIN CURRENT r DS(on) − Static Drain-Source On-State Resistance − Ω IDM − Maximum Peak Drain Current of Each Output − A Figure 7 2 VCC = 5 V See Note A 1.75 TC = 125°C 1.5 Current Limit 1.25 TC = 25°C 1 0.75 TC = − 40°C 0.5 0.25 0 0 0.2 Figure 9 10 0.4 0.6 Figure 10 POST OFFICE BOX 655303 0.8 1 1.2 ID − Drain Current − A NOTE A: Technique should limit TJ − TC to 10°C maximum. • DALLAS, TEXAS 75265 
    


 SLIS005B − APRIL 1993 − REVISED MAY 2005 STATIC DRAIN-SOURCE ON-STATE RESISTANCE vs LOGIC SUPPLY VOLTAGE SWITCHING TIME vs CASE TEMPERATURE 140 2 ID = 350 mA See Note A 1.75 120 TC = 125°C tPLH 1.5 Switching Time − ns r DS(on) − Static Drain-Source On-State Resistance − Ω TYPICAL CHARACTERISTICS 1.25 TC = 25°C 1 0.75 TC = − 40°C 100 80 tr 60 0.5 0.25 tf 20 − 50 0 4 tPHL 40 ID = 350 mA See Note A 5 6 7 0 50 100 150 TC − Case Temperature − °C VCC − Logic Supply Voltage − V Figure 11 Figure 12 NOTE A: Technique should limit TJ − TC to 10°C maximum. THERMAL INFORMATION NE PACKAGE TRANSIENT THERMAL IMPEDANCE vs ON TIME The single-pulse curve represents measured data. The curves for various pulse durations are based on the following equation: Z θJA− Transient Thermal Impedance − ° C /W 100 Zq d = 50% Where: JA + Ť tt Ť w c Rq JA ) Ť 1 – tw tc Ť Z q ǒt w ) t c Ǔ ) Z qǒt wǓ–Z qǒt cǓ d = 20% 10 Z qǒt wǓ = the single-pulse thermal impedance for t = tw seconds d = 10% Z qǒt cǓ = the single-pulse thermal impedance for t = tc seconds d = 5% 1 Z qǒt w ) t cǓ = the single-pulse thermal impedance for t = tw + tc seconds d = 2% d = tw/tc tc Single Pulse tw 0.1 0.001 0.01 0.1 1 10 100 1000 ID 0 t − On Time − s Figure 13 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 11 
    


 SLIS005B − APRIL 1993 − REVISED MAY 2005 Revision History DATE REV PAGE 5/18/05 B 7 1/1/95 A 4/1/93 * SECTION DESCRIPTION Figure 1 Changed SRCLR timing diagram and changed title on Drain timing diagrams — — Original reversion NOTE: Page numbers for previous revisions may differ from page numbers in the current version. 12 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 PACKAGE OPTION ADDENDUM www.ti.com 15-Nov-2022 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) Samples (4/5) (6) TPIC6A595DWR ACTIVE SOIC DW 24 2000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 TPIC6A595 Samples TPIC6A595NE ACTIVE PDIP NE 20 20 RoHS & Non-Green NIPDAU N / A for Pkg Type -40 to 125 TPIC6A595NE Samples (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of