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TPIC6B595
SLIS032B – JULY 1995 – REVISED JUNE 2015
TPIC6B595 Power Logic 8-Bit Shift Register
1 Features
•
•
•
1
•
•
•
Low rDS(on),5 Ω (Typical)
Avalanche Energy, 30 mJ
Eight Power DMOS Transistor Outputs of 150-mA
Continuous Current
Output Clamp Voltage, 50 V
Devices are Cascadable
Low-Power Consumption
2 Applications
•
•
•
•
The storage register transfers data to the output
buffer when shift-register clear (SRCLR) is high.
When SRCLR is low, the input shift register is
cleared. When output enable (G) is held high, all data
in the output buffers is held low and all drain outputs
are off. When G is held low, data from the storage
register is transparent to the output buffers. When
data in the output buffers is low, the DMOS-transistor
outputs are off. When data is high, the DMOS
transistor outputs have sink-current capability. The
serial output (SER OUT) allows for cascading of the
data from the shift register to additional devices.
Outputs are low-side, open-drain DMOS transistors
with output ratings of 50 V and 150-mA continuous
sink-current capability. Each output provides a 500mA typical current limit at TC = 25°C. The current limit
decreases as the junction temperature increases for
additional device protection.
Instrumentation Clusters
Tell-Tale Lamps
LED Illumination and Controls
Automotive Relay or Solenoids Drivers
3 Description
The TPIC6B595 device is a monolithic, high-voltage,
medium-current power 8-bit shift register designed for
use in systems that require relatively high load power.
The device contains a built-in voltage clamp on the
outputs for inductive transient protection. Power
driver applications include relays, solenoids, and
other medium current or high-voltage loads.
This device contains an 8-bit serial-in, parallel-out
shift register that feeds an 8-bit D-type storage
register. Data transfers through the shift and storage
registers on the rising edge of the shift-register clock
(SRCK) and the register clock (RCK), respectively.
The TPIC6B595 is characterized for operation over
the operating case temperature range of −40°C to
125°C.
Device Information(1)
PART NUMBER
TPIC6B595
PACKAGE
BODY SIZE (NOM)
SOIC (20)
12.80 mm × 7.50 mm
PDIP (20)
24.33 mm × 6.35 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Logic Symbol
G
RCK
SRCLR
SRCK
SER IN
9
EN3
12
C2
8
R
SRG8
13
C1
3
4
1D
2
5
6
DRAIN0
DRAIN1
DRAIN2
7
DRAIN3
14
DRAIN4
15
DRAIN5
16
DRAIN6
17
DRAIN7
2
18
SER OUT
This symbol is in accordance with ANSI/IEEE Std 91-1984 and IEC Publication 617-12.
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TPIC6B595
SLIS032B – JULY 1995 – REVISED JUNE 2015
www.ti.com
Table of Contents
1
2
3
4
5
6
7
8
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
6.1
6.2
6.3
6.4
6.5
6.6
6.7
4
4
4
5
5
6
7
Absolute Maximum Ratings ......................................
ESD Ratings ............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Switching Characteristics ..........................................
Typical Characteristics ..............................................
Parameter Measurement Information .................. 9
Detailed Description ............................................ 11
8.1 Overview ................................................................. 11
8.2 Functional Block Diagram ....................................... 11
8.3 Feature Description................................................. 12
8.4 Device Functional Modes........................................ 13
9
Application and Implementation ........................ 14
9.1 Application Information............................................ 14
9.2 Typical Application ................................................. 14
10 Power Supply Recommendations ..................... 16
11 Layout................................................................... 16
11.1 Layout Guidelines ................................................. 16
11.2 Layout Example .................................................... 17
12 Device and Documentation Support ................. 18
12.1
12.2
12.3
12.4
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
18
18
18
18
13 Mechanical, Packaging, and Orderable
Information ........................................................... 18
4 Revision History
Changes from Revision A (May 2005) to Revision B
•
Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section ................................................................................................. 4
Changes from Original (July 1995) to Revision A
•
2
Page
Page
Changed SRCLR timing diagram .......................................................................................................................................... 9
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5 Pin Configuration and Functions
DW or N Package
20-Pin SOIC or PDIP
Top View
NC
VCC
SER IN
DRAIN0
DRAIN1
DRAIN2
DRAIN3
SRCLR
G
GND
1
20
2
19
3
18
4
17
5
16
6
15
7
14
8
13
9
12
10
11
NC
GND
SER OUT
DRAIN7
DRAIN6
DRAIN5
DRAIN4
SRCK
RCK
GND
NC – No internal connection
Pin Functions
PIN
NAME
NO.
DRAIN0
4
DRAIN1
5
DRAIN2
6
DRAIN3
7
DRAIN4
14
DRAIN5
15
DRAIN6
16
DRAIN7
17
G
GND
NC
I/O
DESCRIPTION
O
Open-drain output
Output enable, active-low
9
I
10, 11, 19
—
Power ground
No internal connection
1, 20
—
RCK
12
I
Register clock
SERIN
3
I
Serial data input
SEROUT
18
O
Serial data output
SRCK
15
I
Shift register clock
SRCLR
8
I
Shift register clear, active-low
VCC
2
I
Power supply
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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
MIN
MAX
UNIT
VCC
Logic supply voltage (2)
–0.3
7
V
VI
Logic input voltage
–0.3
7
V
VDS
Power DMOS drain-to-source voltage (3)
–0.3
50
V
Continuous source-to-drain diode anode current
0
500
mA
Pulsed source-to-drain diode anode current (4)
0
1
A
ID
Pulsed drain current, each output, all outputs ON, TC = 25°C (4)
0
500
mA
ID
Continuous drain current, each output, all outputs ON, TC = 25°C (4)
0
150
mA
mA
(4)
IDM
Peak drain current single output, TC = 25°C
0
500
EAS
Single-pulse avalanche energy (see Figure 11)
0
30
mJ
IAS
Avalanche current (5)
0
500
mA
Continuous total dissipation
See Thermal Information
TJ
Operating virtual junction temperature
–40
150
°C
TC
Operating case temperature
–40
125
°C
Tstg
Storage temperature
–65
150
°C
(1)
(2)
(3)
(4)
(5)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltage values are with respect to GND.
Each power DMOS source is internally connected to GND.
Pulse duration ≤ 100 μs and duty cycle ≤ 2%.
DRAIN supply voltage = 15 V, starting junction temperature (TJS) = 25°C, L = 1.5 H, IAS = 200 mA (see Figure 11).
6.2 ESD Ratings
VALUE
Human-body model (HBM), per AEC Q100-002 (1)
V(ESD)
(1)
Electrostatic discharge
Charged-device model (CDM), per AEC
Q100-011
UNIT
±2000
All pins
±500
Corner pins (1, 10, 20,
11)
±750
V
AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
VCC
Logic supply voltage
VIH
High-level input voltage
VIL
Low-level input voltage
4.5
NOM
MAX
5.5
0.85 VCC
–500
V
V
0.15 VCC
Pulsed drain output current, TC = 25°C, VCC = 5 V, all outputs on (1) (2) (see
Figure 7)
UNIT
500
V
mA
tsu
Setup time, SER IN high before SRCKM ↑ (see Figure 9)
20
ns
th
Hold time, SER IN high after SRCKM ↑, (see Figure 9)
20
ns
tw
Pulse duration (see Figure 9)
40
ns
TC
Operating case temperature
–40
(1)
(2)
4
125
°C
Pulse duration ≤ 100 μs and duty cycle ≤ 2%.
Technique should limit TJ − TC to 10°C maximum.
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6.4 Thermal Information
TPIC6B595
THERMAL METRIC (1)
DW (SOIC)
N (PDIP)
20 PINS
20 PINS
UNIT
RθJA
Junction-to-ambient thermal resistance
75.3
57
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
39.8
58.5
°C/W
RθJB
Junction-to-board thermal resistance
43.1
38
°C/W
ψJT
Junction-to-top characterization parameter
15.4
25.2
°C/W
ψJB
Junction-to-board characterization parameter
42.6
37.9
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
6.5 Electrical Characteristics
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
V(BR)DSX
Drain-to-source breakdown
voltage
ID = 1 mA
VSD
Source-to-drain diode forward
voltage
IF = 100 mA
VOH
High-level output voltage, SER
OUT
IOH = −20 µA,
VCC = 4.5 V
4.4
4.49
IOH = −4 mA,
VCC = 4.5 V
4
4.2
VOL
Low-level output voltage, SER
OUT
IOL = 20 µA,
VCC = 4.5 V
0.005
0.1
IOL = 4 mA,
VCC = 4.5 V
0.3
0.5
IIH
High-level input current
VCC = 5.5 V,
VI = VCC
IIL
Low-level input current
VCC = 5.5 V,
VI = 0
50
V
0.85
1
µA
–1
µA
20
100
All outputs ON
150
300
0.4
5
Logic supply current
VCC = 5.5 V
ICC(FRQ)
Logic supply current at
frequency
fSRCK = 5 MHz,
All outputs off,
CL = 30 pF,
See Figure 9 and Figure 2
IN
Nominal current
VDS(on) = 0.5 V,
IN = ID,
TC = 85°C
See
(1) (2) (3)
90
VDS = 40 V,
VCC = 5.5 V
0.1
5
IDSX
OFF-state drain current
VDS = 40 V
TC = 125°C
VCC = 5.5 V
0.15
8
4.2
5.7
6.8
9.5
5.5
8
Static drain-source ON-state
resistance
ID = 100 mA,
TC = 125°C,
VCC = 4.5 V
See (1) and (2) and Figure 3
and Figure 4
ID = 350 mA,
VCC = 4.5 V
(1)
(2)
(3)
V
1
ICC
rDS(on)
V
V
All outputs OFF
ID = 100 mA,
VCC = 4.5 V
UNIT
µA
mA
mA
µA
Ω
Technique should limit TJ − TC to 10°C maximum.
These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts.
Nominal current is defined for a consistent comparison between devices from different sources. It is the current that produces a voltage
drop of 0.5 V at TC = 85°C.
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6.6 Switching Characteristics
VCC = 5 V, TC = 25°C
PARAMETER
tPLH
TEST CONDITIONS
MIN
Propagation delay time, low-to-high-level output
from G
TYP
150
MAX
UNIT
ns
tr
Propagation delay time, high-to-low-level output CL = 30 pF, ID = 100 mA, See Figure 5,
from G
Figure 8 and Figure 9
Rise time, drain output
200
ns
tf
Fall time, drain output
200
ns
ta
Reverse-recovery-current rise time
100
ns
trr
Reverse-recovery time
tPHL
(1)
(2)
6
IF = 100 mA, di/dt = 10 A/µs (1)
See Figure 10
(2)
,
90
ns
300
Technique should limit TJ − TC to 10°C maximum.
These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts.
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6.7 Typical Characteristics
2.5
10
VCC = 5 V
TC = − 40°C to 125°C
4
I CC − Supply Current − mA
IAS − Peak Avalanche Current − A
TC = 25°C
2
1
0.4
2
1.5
1
0.5
0.2
0.1
0.1
0.2
0.4
1
2
4
0
0.1
10
1
tav − Time Duration of Avalanche − ms
VCC = 5 V
See Note A
16
14
TC = 125°C
12
10
8
6
TC = 25°C
4
TC = − 40°C
2
0
0
100
500
200
300
400
ID − Drain Current − mA
600
700
Figure 3. Drain-to-Source On-State Resistance
vs Drain Current
ID = 100 mA
See Note A
7
TC = 125°C
6
5
TC = 25°C
4
3
TC = − 40°C
2
1
0
4
4.5
5
5.5
6
6.5
VCC − Logic Supply Voltage − V
7
Figure 4. Static Drain-to-Source On-State Resistance
vs Logic Supply Voltage
0.45
tf
tr
200
tPLH
150
tPHL
100
50
−50
I D − Maximum Continuous Drain Current
of Each Output − A
ID = 100 mA
See Note A
250
Switching Time − ns
8
Technique should limit TJ − TC to 10°C maximum.
Technique should limit TJ − TC to 10°C maximum.
300
Figure 2. Supply Current vs Frequency
r DS(on) − Static Drain-to-Source On-State Resistance − Ω
r DS(on) − Drain-to-Source On-State Resistance − Ω
Figure 1. Peak Avalanche Current vs Time Duration of
Avalanche
18
100
10
f − Frequency − MHz
VCC = 5 V
0.4
0.35
0.3
0.25
TC = 25°C
0.2
0.15
TC = 100°C
0.1
TC = 125°C
0.05
0
−25
0
25
50
75
100
TC − Case Temperature − °C
1
125
2
3
4
5
6
7
8
N − Number of Outputs Conducting Simultaneously
Technique should limit TJ − TC to 10°C maximum
Figure 5. Switching Time vs Case Temperature
Figure 6. Maximum Continuous Drain Current of
Each Output vs Number of Outputs Conducting
Simultaneously
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I D − Maximum Peak Drain Current of Each Output − A
Typical Characteristics (continued)
0.5
d = 10%
0.45
d = 20%
0.4
0.35
d = 50%
0.3
0.25
d = 80%
0.2
0.15
VCC = 5 V
TC = 25°C
d = tw/tperiod
= 1 ms/tperiod
0.1
0.05
0
1
2
3
4
5
6
7
8
N − Number of Outputs Conducting Simultaneously
Figure 7. Maximum Peak Drain Current of
Each Output vs Number of Outputs Conducting Simultaneously
8
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7 Parameter Measurement Information
5V
24 V
7
2
8
13
Word
Generator
(see Note A)
3
12
SRCLR
DUT
DRAIN
SER IN
4
3
2
1
0
5V
0V
4 −7,
14 −17
Output
CL = 30 pF
(see Note B)
RCK
9
5
ID
VCC
G
5V
G
RL = 235 Ω
SRCK
6
SRCK
0V
5V
SER IN
0V
5V
RCK
0V
5V
SRCLR
0V
GND
10, 11, 19
24 V
DRAIN1
0.5 V
VOLTAGE WAVEFORMS
TEST CIRCUIT
A.
The word generator has the following characteristics: tr ≤ 10 ns, tf ≤ 10 ns, tw = 300 ns, pulsed repetition rate
(PRR) = 5 kHz, ZO = 50 Ω.
B.
CL includes probe and jig capacitance.
Figure 8. Resistive-Load Test Circuit and Voltage Waveforms
5V
G
5V
50%
50%
0V
24 V
tPLH
tPHL
2
8
13
Word
Generator
(see Note A)
3
12
9
V
SRCLR CC
SRCK
ID
4 −7,
14 −17
DUT
RL = 235 Ω
tr
GND
5V
50%
SRCK
0V
tsu
10, 11, 19
TEST CIRCUIT
0.5 V
tf
SWITCHING TIMES
CL = 30 pF
(see Note B)
RCK
10%
10%
Output
24 V
90%
90%
DRAIN
SER IN
G
Output
th
5V
SER IN
50%
50%
0V
tw
INPUT SETUP AND HOLD WAVEFORMS
A.
The word generator has the following characteristics: tr ≤ 10 ns, tf ≤ 10 ns, tw = 300 ns, pulsed repetition rate
(PRR) = 5 kHz, ZO = 50 Ω.
B.
CL includes probe and jig capacitance.
Figure 9. Test Circuit, Switching Times, and Voltage Waveforms
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Parameter Measurement Information (continued)
TP K
DRAIN
Circuit
Under
Test
0.1 A
2500 µF
250 V
di/dt = 20 A/µs
+
25 V
L = 1 mH
IF
(see Note A)
IF
−
0
TP A
25% of IRM
t2
t1
t3
Driver
IRM
RG
VGG
(see Note B)
ta
50 Ω
trr
TEST CIRCUIT
CURRENT WAVEFORM
A.
The DRAIN terminal under test is connected to the TP K test point. All other terminals are connected together and
connected to the TP A test point.
B.
The VGG amplitude and RG are adjusted for di/dt = 20 A/µs. A VGG double-pulse train is used to set IF = 0.1 A, where
t1 = 10 µs, t2 = 7 µs, and t3 = 3 µs.
Figure 10. Reverse-Recovery-Current Test Circuit and Waveforms of Source-to-Drain Diode
5V
15 V
tw
2
8
V
SRCLR CC
10.5 Ω
Word
Generator
(see Note A)
3
12
9
DUT
G
See Note B
200 mH
SER IN
4 −7,
14 −17
DRAIN
RCK
5V
Input
ID
13 SRCK
tav
0V
IAS = 0.5 A
ID
VDS
GND
V(BR)DSX = 50 V
MIN
VDS
10, 11, 19
SINGLE-PULSE AVALANCHE ENERGY TEST CIRCUIT
VOLTAGE AND CURRENT WAVEFORMS
A.
The word generator has the following characteristics: tr ≤ 10 ns, tf ≤10 ns, ZO = 50 Ω.
B.
Input pulse duration, tw, is increased until peak current IAS = 0.5 mA.
Energy test level is defined as EAS = IAS × V(BR)DSX × tav/2 = 30 mJ.
Figure 11. Single-Pulse Avalanche Energy Test Circuit and Waveforms
10
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8 Detailed Description
8.1 Overview
The TPIC6B595 device is a monolithic, high-voltage, medium-current power 8-bit shift register designed for use
in systems that require relatively high load power. The device contains a built-in voltage clamp on the outputs for
inductive transient protection, so it can also drive relays, solenoids, and other medium-current or high-voltage
loads.
8.2 Functional Block Diagram
G
RCK
SRCLR
9
12
4
D
SRCK
13
C1
D
C2
CLR
SER IN
DRAIN0
8
5
3
D
C1
D
C2
CLR
D
C1
6
C1
7
C1
14
C1
15
C1
16
C1
DRAIN6
D
C2
17
CLR
D
DRAIN5
D
C2
CLR
D
DRAIN4
D
C2
CLR
D
DRAIN3
D
C2
CLR
D
DRAIN2
D
C2
CLR
D
DRAIN1
DRAIN7
D
C2
CLR
10, 11, 19
18
GND
SER OUT
Figure 12. Logic Diagram (Positive Logic)
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Functional Block Diagram (continued)
EQUIVALENT OF EACH INPUT
TYPICAL OF ALL DRAIN OUTPUTS
VCC
DRAIN
50 V
Input
25 V
20 V
12 V
GND
GND
Figure 13. Schematic of Inputs
8.3 Feature Description
8.3.1 Serial-In Interface
This device contains an 8-bit serial-in, parallel-out shift register that feeds an 8-bit D-type storage register. Data
transfers through both the shift and storage registers on the rising edge of the shift register clock (SRCK) and the
register clock (RCK), respectively. The storage register transfers data to the output buffer when shift register
clear (SRCLR) is high.
8.3.2 Clear Register
A logical low on (SRCLR) clears all registers in the device. TI suggests clearing the device during power up or
initialization.
8.3.3 Output Control
Holding the output enable (G) high holds all data in the output buffers low, and all drain outputs are off. Holding
(G) low makes data from the storage register transparent to the output buffers. When data in the output buffers is
low, the DMOS transistor outputs are OFF. When data is high, the DMOS transistor outputs have sink-current
capability. This pin can also be used for global PWM dimming.
8.3.4 Cascaded Application
The serial output (SER OUT) allows for cascading of the data from the shift register to additional devices.
Connect the device (SEROUT) pin to the next device (SERIN) for daisy Chain. This provides improved
performance for applications where clock signals may be skewed, devices are not located near one another, or
the system must tolerate electromagnetic interference.
8.3.5 Current Limit Function
Outputs are low-side, open-drain DMOS transistors with output ratings of 50 V and 150-mA continuous sink
current capability. Each output provides a 500-mA typical current limit at TC = 25°C. The current limit decreases
as the junction temperature increases for additional device protection.
12
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8.4 Device Functional Modes
8.4.1 Operation With V(VCC) < 4.5 (Minimum V(VCC))
This device works normally during 4.5 V ≤ V(VCC) ≤ 5.5 V, when operation voltage is lower than 4.5 V. TI can't
ensure the behavior of device, including communication interface and current capability.
8.4.2 Operating With 5.5 V < V(VCC) < 6 V
This device works normally during this voltage range, but reliability issues may occur while the device works for a
long time in this voltage range.
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9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
The TPIC6B595 device is a serial-in parallel-out, Power+LogicE 8-bit shift register with low-side switch DMOS
outputs rating of a 150 mA per channel. The device is designed for use in systems that require relatively high
load power. The device contains a built-in voltage clamp on the outputs for inductive transient protection. Power
driver applications include relays, solenoids, and other medium currentor high-voltage loads. The following
focuses on automotive cluster applications for the TPIC6B595 device.
9.2 Typical Application
The typical application of the TPIC6B595 device is the automotive cluster driver. In this example, two TPIC6B595
power shift registers are cascaded and used to turn on LEDs in the cluster panel. In this case, the LED must be
updated after all 16 bits of data have been loaded into the serial shift registers. MCU outputs the data to the
serial input (SER IN) while clocking the shift register clock (SRCK). After the 16th clock, a pulse to the register
clock (RCK) transfers the data to the storage registers. If output enable (G) is low, then the LEDs are turned ON
corresponding to the status word with ones being ON and zeros OFF. With this simple scheme, MCU use SPI
interface can turn on 16 LEDs using only two ICs as illustrated in Figure 14.
Vbattery
Vbattery
5V
5V
R1
R2
R3
R4
R5
R6
R7
R8
0.1 uF
10 k
R9
R9
R9
R9
R9
R9
R9
D9
D10
D11
D12
D13
D14
D15
D16
10 k
VCC
VCC
TPIC6B595
TPIC6B595
DRAIN0
SRCK
D1
D2
D3
D4
D5
D6
D7
DRAIN0
D8
DRAIN1
RCK
MCU
R9
0.1 uF
DRQIN2
SRCK
DRAIN1
RCK
DRQIN2
SER IN
DRAIN3
SER IN
DRAIN3
SRCLR
DRAIN4
SRCLR
DRAIN4
G
DRAIN5
G
DRAIN5
DRAIN6
DRAIN6
DRAIN7
DRAIN7
SER OUT
SER OUT
GND
TO SERIAL INPUT OF THE NEXT
STAGE
GND
Figure 14. Typical Application Schematic
9.2.1 Design Requirements
Use the design parameters in Table 1 for this design example.
Table 1. Design Parameters
14
DESIGN PARAMETER
EXAMPLE VALUE
VSUPPLY
9-16 V
V(D1), V(D2), V(D3), V(D4), V(D5), V(D6),V(D7), V(D8)
2V
V(D9), V(D10),V(D11), V(D12), V(D13), V(D14),V(D15), V(D16)
3.3 V
I(D1), I(D2), I(D3), I(D4), I(D5), I(D6),I(D7), I(D8)
20mA When Vbattery is 12 V
I(D9), I(D10), I(D11), I(D12), I(D13), I(D14),I(D15), I(D16)
30mA When Vbattery is 12 V
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9.2.2 Detailed Design Procedure
To
•
•
•
begin the design process, one must decide on a few parameters. The designer must know the following:
Vsupply - LED supply is connect battery directly or fix voltage, this application connect the battery directly.
V(Dx) – LED forward voltage
I(Dx) – LED setting current when battery is 12 V.
R1,R2,R3,R4,R5,R6,R7,R8
R1
R2
R3
R4
R5
R6
R7
R8
V supply V(Dx) 12V 2V
I(Dx )
0.02A
500 :
(1)
When Vsupply is 9 V,
I(D1)
I(D2 )
I(D3 )
I(D4 )
I(D5 )
I(D6 )
I(D7 )
I(D8 )
I(D4 )
I(D5 )
I(D6 )
I(D7 )
I(D8 )
V supply V(Dx)
Rx
14mA
(2)
When Vsupply is 16 V,
I(D1)
I(D2 )
I(D3 )
V supply V(Dx)
Rx
28mA
(3)
R9,R10,R11,R12,R13,R14,R15,R16
R9
R10
R11
R12
R13
R14
R15
R16
V supply V(Dx) 12V 3.3V
I( Dx )
0.03A
290 :
(4)
When Vsupply is 9 V,
I(D9) I(D10 ) I(D11) I(D12 ) I(D13 ) I(D14 ) I(D15 ) I(D16 )
V supply V(Dx)
Rx
19.7mA
(5)
When Vsupply is 16 V,
I( D9 )
I( D10 )
I( D11)
I(D12 )
I(D13 )
I( D14 )
I( D15 )
I( D16 )
V supply V(Dx)
Rx
43.8mA
(6)
NOTE
If customers can accept the current variation when battery voltage is changing, they can
connect to the battery directly. If customers need the less variation of current, they must
use the voltage regulator as supply voltage of LED, or change to constant current LED
driver directly.
9.2.3 Application Curve
Figure 15. CH1 is SRCK, CH2 is RCK, CH3 is SER IN, CH4 is D1 current
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10 Power Supply Recommendations
The TPIC6B595 device is designed to operate from an input voltage supply range from 4.5 V and 5.5 V. This
input supply should be well regulated. TI recommends placing the ceramic bypass capacitors near the VCC pin.
11 Layout
11.1 Layout Guidelines
There is no special layout requirement for the digital signal pin; the only requirement is placing the ceramic
bypass capacitors near the corresponding pin. Because the TPIC6B595 device does not have a thermal
shutdown protection function, to prevent thermal damage, TJ must be less than 150°C. If the total sink current is
high, the power dissipation might be large. The devices are currently not available in the thermal pad package,
so good PCB design can optimize heat transfer, which is absolutely essential for the long-term reliability of the
device. Maximize the copper coverage on the PCB to increase the thermal conductivity of the board, because the
major heat-flow path from the package to the ambient is through the copper on the PCB. Maximum copper is
extremely important when the design does not include heat sinks attached to the PCB on the other side of the
package.
• Add as many thermal vias as possible directly under the package ground pad to optimize the thermal
conductivity of the board.
• All thermal vias should be either plated shut or plugged and capped on both sides of the board to prevent
solder voids. To ensure reliability and performance, the solder coverage should be at least 85%.
16
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11.2 Layout Example
Power Ground both
in TOP and Bottom
NC
NC
TPIC6B595
Vcc
GND
VIA to Ground
SER IN
SER OUT
DRAIN0
DRAIN7
DRAIN1
DRAIN6
DRAIN2
DRAIN5
DRAIN3
DRAIN4
SRCK
SRCLR
G
RCK
GND
GND
Figure 16. TPIC6B595 Layout Example
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12 Device and Documentation Support
12.1 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
12.2 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
12.3 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
12.4 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
18
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PACKAGE OPTION ADDENDUM
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15-Nov-2022
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
TPIC6B595DWR
ACTIVE
SOIC
DW
20
2000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
TPIC6B595
Samples
TPIC6B595N
ACTIVE
PDIP
N
20
20
RoHS & Green
NIPDAU
N / A for Pkg Type
-40 to 125
TPIC6B595N
Samples
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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