TPS1101DR

TPS1101, TPS1101Y SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS SLVS079C – DECEMBER 1993 – REVISED AUGUST 1995 D D D D D D D Low rDS(on) . . . 0.09 Ω Typ at VGS = – 10 V 3 V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = – 1.5 V Max Available in Ultrathin TSSOP Package (PW) ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 D PACKAGE (TOP VIEW) SOURCE SOURCE SOURCE GATE 1 8 2 7 3 6 4 5 DRAIN DRAIN DRAIN DRAIN D PACKAGE description The TPS1101 is a single, low-rDS(on), P-channel, enhancement-mode MOSFET. The device has been optimized for 3-V or 5-V power distribution in battery-powered systems by means of the Texas Instruments LinBiCMOS process. With a maximum VGS(th) of – 1.5 V and an IDSS of only 0.5 µA, the TPS1101 is the ideal high-side switch for low-voltage, portable battery-management systems where maximizing battery life is a primary concern. The low rDS(on) and excellent ac characteristics (rise time 5.5 ns typical) of the TPS1101 make it the logical choice for low-voltage switching applications such as power switches for pulse-width-modulated (PWM) controllers or motor/bridge drivers. PW PACKAGE PW PACKAGE (TOP VIEW) NC SOURCE SOURCE SOURCE SOURCE SOURCE GATE NC 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 NC DRAIN DRAIN DRAIN DRAIN DRAIN DRAIN NC The ultrathin thin shrink small-outline package or TSSOP (PW) version fits in height-restricted places where other P-channel MOSFETs cannot. The size advantage is especially important where board height restrictions do not allow for an small-outline integrated circuit (SOIC) package. NC – No internal connection Such applications include notebook computers, personal digital assistants (PDAs), cellular telephones, and PCMCIA cards. For existing designs, the D-packaged version has a pinout common with other P-channel MOSFETs in SOIC packages. AVAILABLE OPTIONS PACKAGED DEVICES† TJ SMALL OUTLINE (D) TSSOP (PW) CHIP FORM (Y) – 40°C to 150°C TPS1101D TPS1101PWLE TPS1101Y † The D package is available taped and reeled. Add an R suffix to device type (e.g., TPS1101DR). The PW package is only available left-end taped and reeled (indicated by the LE suffix on the device type; e.g., TPS1101PWLE). The chip form is tested at 25°C. Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. LinBiCMOS is a trademark of Texas Instruments Incorporated. Copyright  1995, Texas Instruments Incorporated PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 1 TPS1101, TPS1101Y SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS SLVS079C – DECEMBER 1993 – REVISED AUGUST 1995 schematic SOURCE ESDProtection Circuitry GATE DRAIN NOTE A: For all applications, all source terminals should be connected and all drain terminals should be connected. TPS1101Y chip information This chip, when properly assembled, displays characteristics similar to the TPS1101. Thermal compression or ultrasonic bonding may be used on the doped aluminum bonding pads. The chips may be mounted with conductive epoxy or a gold-silicon preform. BONDING PAD ASSIGNMENTS (8) (7) (6) (5) SOURCE SOURCE SOURCE GATE (1) (8) (2) (7) (3) TPS1100Y (4) (6) (5) DRAIN DRAIN DRAIN DRAIN 80 CHIP THICKNESS: 15 MILS TYPICAL BONDING PADS: 4 × 4 MILS MINIMUM TJmax = 150°C TOLERANCES ARE ± 10% (1) ALL DIMENSIONS ARE IN MILS (2) (3) (4) 92 2 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 TPS1101, TPS1101Y SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS SLVS079C – DECEMBER 1993 – REVISED AUGUST 1995 absolute maximum ratings over operating free-air temperature (unless otherwise noted)† UNIT Drain-to-source voltage, VDS – 15 Gate-to-source voltage, VGS 2 or – 15 D package TA = 25°C TA = 125°C ± 0.62 PW package TA = 25°C TA = 125°C ± 0.61 D package TA = 25°C TA = 125°C ± 0.88 PW package TA = 25°C TA = 125°C ± 0.86 D package TA = 25°C TA = 125°C ± 1.52 PW package TA = 25°C TA = 125°C ± 1.44 D package TA = 25°C TA = 125°C ± 2.30 PW package TA = 25°C TA = 125°C ± 2.18 VGS = – 2.7 27V VGS = – 3 V Continuous drain current (TJ = 150°C) 150°C), ID‡ 45V VGS = – 4.5 VGS = – 10 V V V ± 0.39 ± 0.38 ± 0.47 ± 0.45 A ± 0.71 ± 0.67 ± 1.04 ± 0.98 ± 10 A – 1.1 A Storage temperature range, Tstg – 55 to 150 °C Operating junction temperature range, TJ – 40 to 150 °C Operating free-air temperature range, TA – 40 to 125 °C Pulsed drain current, ID‡ TA = 25°C TA = 25°C Continuous source current (diode conduction), IS Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260 °C † Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. ‡ Maximum values are calculated using a derating factor based on RθJA = 158°C/ W for the D package and RθJA = 176°C/ W for the PW package. These devices are mounted on an FR4 board with no special thermal considerations. DISSIPATION RATING TABLE PACKAGE TA ≤ 25°C POWER RATING DERATING FACTOR‡ ABOVE TA = 25°C TA = 70°C POWER RATING TA = 85°C POWER RATING TA = 125°C POWER RATING D 791 mW 6.33 mW/°C 506 mW 411 mW 158 mW PW 710 mW 5.68 mW/°C 454 mW 369 mW 142 mW ‡ Maximum values are calculated using a derating factor based on RθJA = 158°C/ W for the D package and RθJA = 176°C/ W for the PW package. These devices are mounted on an FR4 board with no special thermal considerations. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 3 TPS1101, TPS1101Y SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS SLVS079C – DECEMBER 1993 – REVISED AUGUST 1995 electrical characteristics at TJ = 25°C (unless otherwise noted) static PARAMETER VGS(th) Gate-to-source threshold voltage VDS = VGS, ID = – 250 µA VSD Source-to-drain voltage (diode-forward voltage)† IS = – 1 A, VGS = 0 V IGSS Reverse gate current, drain short circuited to source VDS = 0 V, VGS = – 12 V IDSS Zero-gate-voltage g g drain current VDS = – 12 V V, VGS = 0 V drain-to-source Static drain to source on-state resistance† VGS = – 10 V VGS = – 4.5 V VGS = – 3 V ID = – 2.5 A ID = – 1.5 A rDS( DS(on)) VGS = – 2.7 V Forward transconductance† gfs TPS1101 TEST CONDITIONS VDS = – 10 V, TPS1101Y MIN TYP MAX –1 – 1.25 – 1.5 MIN – 1.04 TYP MAX – 1.25 V – 1.04 V ± 100 TJ = 25°C TJ = 125°C nA – 0.5 µA – 10 90 ID = – 0 0.5 5A ID = – 2 A UNIT 90 134 190 134 198 310 198 232 400 232 4.3 mΩ 4.3 S † Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2% dynamic PARAMETER TPS1101, TPS1101Y TEST CONDITIONS MIN TYP MAX UNIT Qg Total gate charge Qgs Gate-to-source charge Qgd Gate-to-drain charge 2.6 td(on) td(off) Turn-on delay time 6.5 ns 19 ns tr tf Rise time trr(SD) Source-to-drain reverse recovery time 4 11.25 VDS = – 10 V, Turn-off delay time VDD = – 10 V,, RG = 6 Ω, VGS = – 10 V, RL = 10 Ω,, See Figures 1 and 2 Fall time ID = – 1 A ID = – 1 A,, 1.5 5.5 13 IF = 5.3 A, POST OFFICE BOX 655303 di/dt = 100 A/µs • DALLAS, TEXAS 75265 nC 16 ns TPS1101, TPS1101Y SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS SLVS079C – DECEMBER 1993 – REVISED AUGUST 1995 PARAMETER MEASUREMENT INFORMATION VGS 90% RL VDS VGS – + VDD RG 0V 10% DUT – 10 V VDS td(on) td(off) tr Figure 1. Switching-Time Test Circuit tf Figure 2. Switching-Time Waveforms TYPICAL CHARACTERISTICS Table of Graphs FIGURE Drain current vs Drain-to-source voltage 3 Drain current vs Gate-to-source voltage 4 Static drain-to-source on-state resistance vs Drain current 5 Capacitance vs Drain-to-source voltage 6 Static drain-to-source on-state resistance (normalized) vs Junction temperature 7 Source-to-drain diode current vs Source-to-drain voltage 8 Static drain-to-source on-state resistance vs Gate-to-source voltage 9 Gate-to-source threshold voltage vs Junction temperature 10 Gate-to-source voltage vs Gate charge 11 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 5 TPS1101, TPS1101Y SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS SLVS079C – DECEMBER 1993 – REVISED AUGUST 1995 TYPICAL CHARACTERISTICS DRAIN CURRENT vs DRAIN-TO-SOURCE VOLTAGE DRAIN CURRENT vs GATE-TO-SOURCE VOLTAGE – 10 – 10 VGS = – 8 V –9 VDS = – 10 V VGS = – 5 V TJ = 25°C –8 VGS = – 4 V I D – Drain Current – A I D – Drain Current – A –8 –7 VGS = – 3 V –6 –5 ÁÁ ÁÁ –3 VGS = – 2 V TJ = 150°C –6 ÁÁ ÁÁ –4 –2 TJ = – 40°C –4 –2 –1 TJ = 25°C 0 0 0 – 1 – 2 – 3 – 4 – 5 – 6 – 7 – 8 – 9 – 10 0 –1 VDS – Drain-to-Source Voltage – V –3 Figure 4 CAPACITANCE† vs DRAIN-TO-SOURCE VOLTAGE STATIC DRAIN-TO-SOURCE ON-STATE RESISTANCE vs DRAIN CURRENT 800 0.5 TJ = 25°C 700 C – Capacitance – pF 0.3 VGS = – 2.7 V 0.2 VGS = – 3 V VGS = – 4.5 V 600 500 Coss 400 300 0.1 VGS = – 10 V VGS = 0 V f = 1 MHz TJ = 25°C Ciss† 0.4 0 – 0.1 200 Crss‡ 100 –1 0 – 1 – 2 – 3 – 4 – 5 – 6 – 7 – 8 – 9 –10 –11 –12 – 10 ID – Drain Current – A VDS – Drain-to-Source Voltage – V + Cgs ) Cgd, Cds(shorted) C gs C gd ‡ C rss + C gd, C oss + C ds ) C ) C gs † C Figure 5 iss gd Figure 6 6 –5 –4 VGS – Gate-to-Source Voltage – V Figure 3 r DS(on) – Static Drain-to-Source On-State Resistance – Ω –2 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 ≈ C ds ) Cgd TPS1101, TPS1101Y SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS SLVS079C – DECEMBER 1993 – REVISED AUGUST 1995 TYPICAL CHARACTERISTICS STATIC DRAIN-TO-SOURCE ON-STATE RESISTANCE (NORMALIZED) vs JUNCTION TEMPERATURE SOURCE-TO-DRAIN DIODE CURRENT vs SOURCE-TO-DRAIN VOLTAGE – 10 1.5 Pulse Test I SD – Source-to-Drain Diode Current – A On-State Resistance (normalized) r DS(on) – Static Drain-to-Source 1.4 VGS = – 10 V ID = – 1A 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 – 50 0 50 100 TJ – Junction Temperature – °C TJ = 150°C TJ = – 40°C – 0.1 – 0.1 150 – 0.3 – 0.5 – 0.7 – 0.9 – 1.1 VSD – Source-to-Drain Voltage – V Figure 7 ID = – 1 A TJ = 25°C 0.4 0.3 0.2 0.1 –5 –7 –9 – 11 – 13 GATE-TO-SOURCE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE VGS(th) – Gate-to-Source Threshold Voltage – V r DS(on) – Static Drain-to-Source On-State Resistance – Ω 0.5 –3 – 1.3 Figure 8 STATIC DRAIN-TO-SOURCE ON-STATE RESISTANCE vs GATE-TO-SOURCE VOLTAGE 0 –1 TJ = 25°C –1 – 1.5 ID = – 250 µA – 1.4 – 1.3 – 1.2 – 1.1 ÁÁ ÁÁ ÁÁ – 15 –1 – 0.9 – 50 0 50 100 150 TJ – Junction Temperature – °C VGS – Gate-to-Source Voltage – V Figure 9 Figure 10 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 7 TPS1101, TPS1101Y SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS SLVS079C – DECEMBER 1993 – REVISED AUGUST 1995 TYPICAL CHARACTERISTICS GATE-TO-SOURCE VOLTAGE vs GATE CHARGE VGS – Gate-to-Source Voltage – V – 10 VDS = – 10 V ID = – 1 A TJ = 25°C –8 –6 –4 –2 0 0 2 4 6 8 10 Qg – Gate Charge – nC Figure 11 8 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 12 TPS1101, TPS1101Y SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS SLVS079C – DECEMBER 1993 – REVISED AUGUST 1995 THERMAL INFORMATION TRANSIENT JUNCTION-TO-AMBIENT THERMAL IMPEDANCE vs PULSE DURATION DRAIN CURRENT vs DRAIN-TO-SOURCE VOLTAGE – 100 100 Single Pulse See Note A I D – Drain Current – A – 10 ZθJA – Transient Junction-to-Ambient Thermal Impedance – °C/W Single Pulse See Note A 0.001 s 0.01 s –1 0.1 s 1s 10 s – 0.1 DC TJ = 150°C TA = 25°C – 0.01 – 0.1 –1 – 10 – 100 VDS – Drain-to-Source Voltage – V NOTE A: Values are for the D package and are FR4-board-mounted only. 10 1 0.1 0.001 0.01 0.1 1 tw – Pulse Duration – s NOTE A: Values are for the D package and FR4-board-mounted only. 10 are Figure 13 Figure 12 APPLICATION INFORMATION 3 V or 5 V 5V Microcontroller Driver Load Figure 14. Notebook Load Management POST OFFICE BOX 655303 Microcontroller Charge Pump –4 V GaAs FET Amplifier Figure 15. Cellular Phone Output Drive • DALLAS, TEXAS 75265 9 PACKAGE OPTION ADDENDUM www.ti.com 10-Dec-2020 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) TPS1101D ACTIVE SOIC D 8 75 RoHS & Green NIPDAU Level-1-260C-UNLIM 1101 TPS1101DR ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM 1101 TPS1101PWR ACTIVE TSSOP PW 16 2000 RoHS & Green NIPDAU Level-1-260C-UNLIM PS1101 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of