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TPS2020DR

TPS2020DR

  • 厂商:

    BURR-BROWN(德州仪器)

  • 封装:

    SOIC8_150MIL

  • 描述:

    TPS2020 0.22A, 2.7-5.5V SINGLE P

  • 数据手册
  • 价格&库存
TPS2020DR 数据手册
TPS2020,, TPS2021 TPS2022, TPS2023, TPS2024 www.ti.com SLVS175C – DECEMBER 1998 – REVISED SEPTEMBER 2007 POWER-DISTRIBUTION SWITCHES FEATURES 1 • • • • • • • • • • • • 33-mΩ (5-V Input) High-Side MOSFET Switch Short-Circuit and Thermal Protection Overcurrent Logic Output Operating Range . . . 2.7 V to 5.5 V Logic-Level Enable Input Typical Rise Time . . . 6.1 ms Undervoltage Lockout Maximum Standby Supply Current . . . 10 μA No Drain-Source Back-Gate Diode Available in 8-Pin SOIC and PDIP Packages Ambient Temperature Range, –40°C to 85°C 2-kV Human-Body-Model, 200-V Machine-Model ESD Protection • UL Listed - File No. E169910 D OR P PACKAGE (TOP VIEW) GND IN IN EN 1 8 2 7 3 6 4 5 OUT OUT OUT OC DESCRIPTION The TPS202x family of power distribution switches is intended for applications where heavy capacitive loads and short circuits are likely to be encountered. These devices are 50-mΩ N-channel MOSFET high-side power switches. The switch is controlled by a logic enable compatible with 5-V logic and 3-V logic. Gate drive is provided by an internal charge pump designed to control the power-switch rise times and fall times to minimize current surges during switching. The charge pump requires no external components and allows operation from supplies as low as 2.7 V. When the output load exceeds the current-limit threshold or a short is present, the TPS202x limits the output current to a safe level by switching into a constant-current mode, pulling the overcurrent (OC) logic output low. When continuous heavy overloads and short circuits increase the power dissipation in the switch, causing the junction temperature to rise, a thermal protection circuit shuts off the switch to prevent damage. Recovery from a thermal shutdown is automatic once the device has cooled sufficiently. Internal circuitry ensures the switch remains off until valid input voltage is present. The TPS202x devices differ only in short-circuit current threshold. The TPS2020 limits at 0.3-A load, the TPS2021 at 0.9-A load, the TPS2022 at 1.5-A load, the TPS2023 at 2.2-A load, and the TPS2024 at 3-A load (see Available Options). The TPS202x is available in an 8-pin small-outline integrated-circuit (SOIC) package and in an 8-pin dual in-line package (DIP) and operates over a junction temperature range of –40°C to 125°C. 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 1998–2007, Texas Instruments Incorporated TPS2020,, TPS2021 TPS2022, TPS2023, TPS2024 www.ti.com SLVS175C – DECEMBER 1998 – REVISED SEPTEMBER 2007 Table 1. AVAILABLE OPTIONS TA ENABLE –40°C to 85°C (1) PACKAGED DEVICES RECOMMENDED MAXIMUM CONTINUOUS LOAD CURRENT (A) TYPICAL SHORT-CIRCUIT CURRENT LIMIT AT 25°C (A) SMALL OUTLINE (D) (1) PLASTIC DIP (P) 0.2 0.3 TPS2020D TPS2020P 0.6 0.9 TPS2021D TPS2021P Active low 1 1.5 TPS2022D TPS2022P 1.5 2.2 TPS2023D TPS2023P 2 3 TPS2024D TPS2024P The D package is available taped and reeled. Add an R suffix to device type (e.g., TPS2020DR) TPS2020 FUNCTIONAL BLOCK DIAGRAM Power Switch † CS IN OUT Charge Pump EN Current Limit Driver OC UVLO Thermal Sense GND †Current Sense TERMINAL FUNCTIONS TERMINAL NO. D OR P I/O EN 4 I Enable input. Logic-low turns on power switch. GND 1 I Ground NAME DESCRIPTION IN 2, 3 I Input voltage OC 5 O Overcurrent. Logic output, active-low 6, 7, 8 O Power-switch output OUT 2 Submit Documentation Feedback Copyright © 1998–2007, Texas Instruments Incorporated Product Folder Link(s): TPS2020 TPS2021 TPS2022 TPS2023 TPS2024 TPS2020,, TPS2021 TPS2022, TPS2023, TPS2024 www.ti.com SLVS175C – DECEMBER 1998 – REVISED SEPTEMBER 2007 DETAILED DESCRIPTION POWER SWITCH The power switch is an N-channel MOSFET with a maximum on-state resistance of 50 mΩ (VI(IN) = 5 V). Configured as a high-side switch, the power switch prevents current flow from OUT to IN and IN to OUT when disabled. CHARGE PUMP An internal charge pump supplies power to the driver circuit and provides the necessary voltage to pull the gate of the MOSFET above the source. The charge pump operates from input voltages as low as 2.7 V and requires very little supply current. DRIVER The driver controls the gate voltage of the power switch. To limit large current surges and reduce the associated electromagnetic interference (EMI) produced, the driver incorporates circuitry that controls the rise times and fall times of the output voltage. The rise and fall times are typically in the 2-ms to 9-ms range. ENABLE (EN) The logic enable disables the power switch, the bias for the charge pump, driver, and other circuitry to reduce the supply current to less than 10 μA when a logic-high is present on EN. A logic-zero input on EN restores bias to the drive and control circuits and turns the power on. The enable input is compatible with both TTL and CMOS logic levels. OVERCURRENT (OC) The OC open drain output is asserted (active low) when an overcurrent or overtemperature condition is encountered. The output remains asserted until the overcurrent or overtemperature condition is removed. CURRENT SENSE A sense FET monitors the current supplied to the load. The sense FET measures current more efficiently than conventional resistance methods. When an overload or short circuit is encountered, the current-sense circuitry sends a control signal to the driver. The driver, in turn, reduces the gate voltage and drives the power FET into its saturation region, which switches the output into a constant-current mode and holds the current constant while varying the voltage on the load. THERMAL SENSE An internal thermal-sense circuit shuts off the power switch when the junction temperature rises to approximately 140°C. Hysteresis is built into the thermal sense circuit. After the device has cooled approximately 20°C, the switch turns back on. The switch continues to cycle off and on until the fault is removed. UNDERVOLTAGE LOCKOUT A voltage sense circuit monitors the input voltage. When the input voltage is below approximately 2 V, a control signal turns off the power switch. Copyright © 1998–2007, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Link(s): TPS2020 TPS2021 TPS2022 TPS2023 TPS2024 3 TPS2020,, TPS2021 TPS2022, TPS2023, TPS2024 www.ti.com SLVS175C – DECEMBER 1998 – REVISED SEPTEMBER 2007 ABSOLUTE MAXIMUM RATINGS over operating free-air temperature range (unless otherwise noted) (1) VI(IN) (2) Input voltage range –0.3 V to 6 V VO(OUT) (2) Output voltage range –0.3 V to VI(IN) + 0.3 V VI(EN) Input voltage range –0.3 V to 6 V IO(OUT) Continuous output current Internally limited Continuous total power dissipation See Dissipation Rating Table TJ Operating virtual junction temperature range –40°C to 125°C Tstg Storage temperature range –65°C to 150°C (1) (2) Lead temperature soldering 1,6 mm (1/16 inch) from case for 10 seconds 260°C Electrostatic discharge (ESD) protection: Human body model 2 kV Machine model 200 V Charged device model (CDM) 750 V Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltages are with respect to GND. DISSIPATION RATING TABLE TA ≤ 25°C POWER RATING DERATING FACTOR ABOVE TA = 25°C TA = 70°C POWER RATING TA = 85°C POWER RATING D 725 mW 5.8 mW/°C 464 mW 377 mW P 1175 mW 9.4 mW/°C 752 mW 611 mW PACKAGE RECOMMENDED OPERATING CONDITIONS VI(IN) VI(EN) IO MIN MAX 2.7 5.5 V 0 5.5 V TPS2020 0 0.2 TPS2021 0 0.6 TPS2022 0 1 TPS2023 0 1.5 Input voltage Continuous output current TPS2024 TJ 4 Operating virtual junction temperature Submit Documentation Feedback 0 2 –40 125 UNIT A °C Copyright © 1998–2007, Texas Instruments Incorporated Product Folder Link(s): TPS2020 TPS2021 TPS2022 TPS2023 TPS2024 TPS2020,, TPS2021 TPS2022, TPS2023, TPS2024 www.ti.com SLVS175C – DECEMBER 1998 – REVISED SEPTEMBER 2007 ELECTRICAL CHARACTERISTICS over recommended operating junction temperature range, VI(IN) = 5.5 V, IO = rated current, EN = 0 V (unless otherwise noted) TEST CONDITIONS (1) PARAMETER MIN TYP MAX VI(IN) = 5 V, TJ = 25°C, IO = 1.8 A 33 36 VI(IN) = 5 V, TJ = 85°C, IO = 1.8 A 38 46 VI(IN) = 5 V, TJ = 125°C, IO = 1.8 A 44 50 VI(IN) = 3.3 V, TJ = 25°C, IO = 1.8 A 37 41 VI(IN) = 3.3 V, TJ = 85°C, IO = 1.8 A 43 52 VI(IN) = 3.3 V, TJ = 125°C, IO = 1.8 A 51 61 VI(IN) = 5 V, TJ = 25°C, IO = 0.18 A 30 34 VI(IN) = 5 V, TJ = 85°C, IO = 0.18 A 35 41 VI(IN) = 5 V, TJ = 125°C, IO = 0.18 A 39 47 VI(IN) = 3.3 V, TJ = 25°C, IO = 0.18 A 33 37 VI(IN) = 3.3 V, TJ = 85°C, IO = 0.18 A 39 46 VI(IN) = 3.3 V, TJ = 125°C, IO = 0.18 A 44 56 VI(IN) = 5.5 V, CL = 1 μF, TJ = 25°C, RL = 10 Ω 6.1 VI(IN) = 2.7 V, CL = 1 μF, TJ = 25°C, RL = 10 Ω 8.6 VI(IN) = 5.5 V, CL = 1 μF, TJ = 25°C, RL = 10 Ω 3.4 VI(IN) = 2.7 V, CL = 1 μF, TJ = 25°C, RL = 10 Ω 3 UNIT POWER SWITCH rDS(on) Static drain-source on-state resistance tr Rise time, output tf Fall time, output mΩ ms ms ENABLE INPUT (EN) VIH High-level input voltage 2.7 V≤ VI(IN) ≤ 5.5 V 2 V 4.5 V ≤ VI(IN) ≤ 5.5 V 0.8 2.7 V ≤ VI(IN) ≤ 4.5 V 0.5 VIL Low-level input voltage II Input current EN= 0 V or EN = VI(IN) ton Turnon time CL = 100 μF, RL= 10 Ω 20 toff Turnoff time CL = 100 μF, RL= 10 Ω 40 –0.5 0.5 V μA ms CURRENT LIMIT IOS Short-circuit output current TJ = 25°C, VI = 5.5 V, OUT connected to GND, Device enabled into short circuit TPS2020 0.22 0.3 0.4 TPS2021 0.66 0.9 1.1 TPS2022 1.1 1.5 1.8 TPS2023 1.65 2.2 2.7 TPS2024 2.2 3 3.8 0.3 1 A SUPPLY CURRENT TJ = 25°C Supply current, low-level output No load on OUT EN = VI(IN) TJ = 25°C 58 75 Supply current, high-level output No load on OUT EN = 0 V –40°C ≤ TJ ≤ 125°C 75 100 Leakage current OUT connected to ground –40°C ≤ TJ ≤ 125°C 10 EN = VI(IN) –40°C ≤ TJ ≤ 125°C 10 μA μA μA UNDERVOLTAGE LOCKOUT Low-level input voltage 2 Hysteresis TJ = 25°C 2.5 100 V mV OVERCURRENT (OC) Output low voltage IO = 10 mA, VOL(OC) Off-state current (2) VO = 5 V, VO = 3.3 V (1) (2) 0.4 V 1 μA Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately. Specified by design, not production tested. Copyright © 1998–2007, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Link(s): TPS2020 TPS2021 TPS2022 TPS2023 TPS2024 5 TPS2020,, TPS2021 TPS2022, TPS2023, TPS2024 www.ti.com SLVS175C – DECEMBER 1998 – REVISED SEPTEMBER 2007 PARAMETER MEASURMENT INFORMATION OUT RL tf tr CL VO(OUT) 90% 10% 90% 10% TEST CIRCUIT 50% VI(EN) 50% toff ton VO(OUT) 90% 10% VOLTAGE WAVEFORMS Figure 1. Test Circuit and Voltage Waveforms 6 Submit Documentation Feedback Copyright © 1998–2007, Texas Instruments Incorporated Product Folder Link(s): TPS2020 TPS2021 TPS2022 TPS2023 TPS2024 TPS2020,, TPS2021 TPS2022, TPS2023, TPS2024 www.ti.com SLVS175C – DECEMBER 1998 – REVISED SEPTEMBER 2007 PARAMETER MEASURMENT INFORMATION (continued) TABLE OF TIMING DIAGRAMS FIGURE Turnon Delay and Rise TIme 2 Turnoff Delay and Fall Time 3 Turnon Delay and Rise TIme with 1-μF Load 4 Turnoff Delay and Rise TIme with 1-μF Load 5 Device Enabled into Short 6 7, 8, 9, 10, 11 TPS2020, TPS2021, TPS2022, TPS2023, and TPS2024, Ramped Load on Enabled Device TPS2024, Inrush Current 12 7.9-Ω Load Connected to an Enabled TPS2020 Device 13 3.7-Ω Load Connected to an Enabled TPS2020 Device 14 3.7-Ω Load Connected to an Enabled TPS2021 Device 15 2.6-Ω Load Connected to an Enabled TPS2021 Device 16 2.6-Ω Load Connected to an Enabled TPS2022 Device 17 1.2-Ω Load Connected to an Enabled TPS2022 Device 18 1.2-Ω Load Connected to an Enabled TPS2023 Device 19 0.9-Ω Load Connected to an Enabled TPS2023 Device 20 0.9-Ω Load Connected to an Enabled TPS2024 Device 21 0.5-Ω Load Connected to an Enabled TPS2024 Device 22 VI(EN) (5 V/div) VI(EN) (5 V/div) VI(EN) VI(EN) VI(IN) = 5 V RL = 27 Ω TA = 25°C VO(OUT) (2 V/div) VO(OUT) (2 V/div) VIN = 5 V RL = 27 Ω TA = 25°C VO(OUT) 0 2 4 6 8 10 12 14 16 18 VO(OUT) 20 0 2 4 6 8 10 12 14 16 18 t − Time − ms t − Time − ms Figure 2. Turnon Delay and Rise Time Figure 3. Turnoff Delay and Fall Time Copyright © 1998–2007, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Link(s): TPS2020 TPS2021 TPS2022 TPS2023 TPS2024 20 7 TPS2020,, TPS2021 TPS2022, TPS2023, TPS2024 www.ti.com SLVS175C – DECEMBER 1998 – REVISED SEPTEMBER 2007 VI(EN) (5 V/div) VI(EN) (5 V/div) VI(EN) VI(EN) VO(OUT) (2 V/div) VO(OUT) (2 V/div) VI(IN) = 5 V CL = 1 µF RL = 27 Ω TA = 25°C VO(OUT) 0 2 4 6 8 10 12 14 16 18 VI(IN) = 5 V CL = 1 µF RL = 27 Ω TA = 25°C VO(OUT) 0 20 2 4 6 8 10 12 14 16 18 20 t − Time − ms t − Time − ms Figure 4. Turnon Delay and Rise Time with 1-μF Load Figure 5. Turnoff Delay and Fall Time with 1-μF Load VO(OC) (5 V/div) VI(EN) VI(EN) (5 V/div) VO(OC) VI(IN) = 5 V TA = 25°C VI(IN) = 5 V TA = 25°C TPS2024 TPS2023 IO(OUT) (500 mA/div) TPS2022 TPS2021 TPS2020 IO(OUT) IO(OUT) IO(OUT) (1 A/div) 0 1 2 3 4 5 6 7 8 t − Time − ms Figure 6. Device Enabled Into Short 8 Submit Documentation Feedback 9 10 0 20 40 60 80 100 120 140 160 180 200 t − Time − ms Figure 7. TPS2020, Ramped Load on Enabled Device Copyright © 1998–2007, Texas Instruments Incorporated Product Folder Link(s): TPS2020 TPS2021 TPS2022 TPS2023 TPS2024 TPS2020,, TPS2021 TPS2022, TPS2023, TPS2024 www.ti.com SLVS175C – DECEMBER 1998 – REVISED SEPTEMBER 2007 VO(OC) (5 V/div) VO(OC) VO(OC) (5 V/div) VO(OC) VI(IN) = 5 V TA = 25°C VI(IN) = 5 V TA = 25°C IO(OUT) (1 A/div) IO(OUT) (1 A/div) IO(OUT) IO(OUT) 0 20 40 60 80 100 120 140 160 180 200 0 20 40 60 80 100 120 140 160 180 200 t − Time − ms t − Time − ms Figure 8. TPS2021, Ramped Load on Enabled Device Figure 9. TPS2022, Ramped Load on Enabled Device VO(OC) (5 V/div) VO(OC) (5 V/div) VO(OC) VO(OC) VI(IN) = 5 V TA = 25°C VI(IN) = 5 V TA = 25°C IO(OUT) (1 A/div) IO(OUT) (1 A/div) IO(OUT) IO(OUT) 0 20 40 60 80 100 120 140 160 180 200 0 20 40 60 80 100 120 140 160 180 200 t − Time − ms t − Time − ms Figure 10. TPS2023, Ramped Load on Enabled Device Figure 11. TPS2024, Ramped Load on Enabled Device Copyright © 1998–2007, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Link(s): TPS2020 TPS2021 TPS2022 TPS2023 TPS2024 9 TPS2020,, TPS2021 TPS2022, TPS2023, TPS2024 www.ti.com SLVS175C – DECEMBER 1998 – REVISED SEPTEMBER 2007 VI(EN) VO(OC) (5 V/div) VI(EN) (5 V/div) VO(OC) IO(OUT) (200 mA/div) 470 µF 150 µF II(IN) (500 mA/div) II(IN) RL = 10 Ω TA = 25°C 47 µF 0 1 2 3 4 5 6 7 8 9 VI(IN) = 5 V RL = 7.9 Ω TA = 25°C IO(OUT) 10 0 200 400 600 800 1000 1200 1400 1600 1800 2000 t − Time − µs t − Time − ms Figure 12. TPS2024, Inrush Current Figure 13. 7.9-Ω Load Connected to an Enabled TPS2020 Device VO(OC) (5 V/div) VO(OC) (5 V/div) VO(OC) VO(OC) VI(IN) = 5 V RL = 3.7 Ω TA = 25°C VI(IN) = 5 V RL = 3.7 Ω TA = 25°C IO(OUT) (500 mA/div) IO(OUT) IO(OUT) 0 50 100 150 200 250 300 350 400 450 500 t − Time − µs Figure 14. 3.7-Ω Load Connected to an Enabled TPS2020 Device 10 IO(OUT) (1 A/div) Submit Documentation Feedback 0 200 400 600 800 1000 1200 1400 1600 1800 2000 t − Time − µs Figure 15. 3.7-Ω Load Connected to an Enabled TPS2021 Device Copyright © 1998–2007, Texas Instruments Incorporated Product Folder Link(s): TPS2020 TPS2021 TPS2022 TPS2023 TPS2024 TPS2020,, TPS2021 TPS2022, TPS2023, TPS2024 www.ti.com SLVS175C – DECEMBER 1998 – REVISED SEPTEMBER 2007 VO(OC) VO(OC) (5 V/div) VO(OC) (5 V/div) VO(OC) VI(IN) = 5 V RL = 2.6 Ω TA = 25°C VI(IN) = 5 V RL = 2.6 Ω TA = 25°C IO(OUT) (1 A/div) IO(OUT) (1 A/div) IO(OUT) IO(OUT) 0 50 100 150 200 250 300 350 400 450 500 0 t − Time − µs 200 400 600 800 1000 1200 1400 1600 1800 2000 t − Time − µs Figure 16. 2.6-Ω Load Connected to an Enabled TPS2021 Device Figure 17. 2.6-Ω Load Connected to an Enabled TPS2022 Device VO(OC) (5 V/div) VO(OC) (5 V/div) VO(OC) VO(OC) VI(IN) = 5 V RL = 1.2 Ω TA = 25°C IO(OUT) (1 A/div) IO(OUT) IO(OUT) (2 A/div) VI(IN) = 5 V RL = 1.2 Ω TA = 25°C IO(OUT) 0 100 200 300 400 500 600 700 800 900 1000 t − Time − µs Figure 18. 1.2-Ω Load Connected to an Enabled TPS2022 Device Copyright © 1998–2007, Texas Instruments Incorporated 0 100 200 300 400 500 600 700 800 900 1000 t − Time − µs Figure 19. 1.2-Ω Load Connected to an Enabled TPS2023 Device Submit Documentation Feedback Product Folder Link(s): TPS2020 TPS2021 TPS2022 TPS2023 TPS2024 11 TPS2020,, TPS2021 TPS2022, TPS2023, TPS2024 www.ti.com SLVS175C – DECEMBER 1998 – REVISED SEPTEMBER 2007 VO(OC) (5 V/div) VO(OC) (5 V/div) VO(OC) VO(OC) VI(IN) = 5 V RL = 0.9 Ω TA = 25°C VI(IN) = 5 V RL = 0.9 Ω TA = 25°C IO(OUT) (2 A/div) IO(OUT) (5 A/div) IO(OUT) IO(OUT) 0 100 200 300 400 500 600 700 800 900 1000 0 100 200 300 400 500 600 700 800 900 1000 t − Time − µs t − Time − µs Figure 20. 0.9-Ω Load Connected to an Enabled TPS2023 Device Figure 21. 0.9-Ω Load Connected to an Enabled TPS2024 Device VO(OC) (5 V/div) VO(OC) VI(IN) = 5 V RL = 0.5 Ω TA = 25°C IO(OUT) (5 A/div) IO(OUT) 0 50 100 150 200 250 300 350 400 450 500 t − Time − µs Figure 22. 0.5-Ω Load Connected to an Enabled TPS2024 Device 12 Submit Documentation Feedback Copyright © 1998–2007, Texas Instruments Incorporated Product Folder Link(s): TPS2020 TPS2021 TPS2022 TPS2023 TPS2024 TPS2020,, TPS2021 TPS2022, TPS2023, TPS2024 www.ti.com SLVS175C – DECEMBER 1998 – REVISED SEPTEMBER 2007 TYPICAL CHARACTERISTICS TABLE OF GRAPHS FIGURE td(on) Turnon delay time vs Output voltage 23 td(off) Turnoff delay time vs Input voltage 24 tr Rise time vs Load current 25 tf Fall time vs Load current 26 Supply current (enabled) vs Junction temperature 27 Supply current (disabled) vs Junction temperature 28 Supply current (enabled) vs Input voltage 29 Supply current (disabled) vs Input voltage 30 vs Input voltage 31 vs Junction temperature 32 vs Input voltage 33 vs Junction temperature 34 vs Input voltage 35 vs Junction temperature 36 Undervoltage lockout 37 IOS Short-circuit current limit rDS(on) Static drain-source on-state resistance VI Input voltage TURNON DELAY TIME vs OUTPUT VOLTAGE TURNOFF DELAY TIME vs INPUT VOLTAGE 18 7.5 6.5 6 5.5 5 t d(off) t d(on) − Turn-on Delay Time − ms 7 − Turn-off Delay Time − ms TA = 25°C CL = 1 µF 4.5 TA = 25°C CL = 1 µF 17.5 17 16.5 4 3.5 2.5 3 3.5 4 4.5 5 VI − Input Voltage − V Figure 23. Copyright © 1998–2007, Texas Instruments Incorporated 5.5 6 16 2.5 3 3.5 4 4.5 5 VI − Input Voltage − V 5.5 6 Figure 24. Submit Documentation Feedback Product Folder Link(s): TPS2020 TPS2021 TPS2022 TPS2023 TPS2024 13 TPS2020,, TPS2021 TPS2022, TPS2023, TPS2024 www.ti.com SLVS175C – DECEMBER 1998 – REVISED SEPTEMBER 2007 RISE TIME vs LOAD CURRENT FALL TIME vs LOAD CURRENT 6.5 3.5 TA = 25°C CL = 1 µF TA = 25°C CL = 1 µF t f − Fall Time − ms t r − Rise Time − ms 3.25 6 5.5 3 2.75 5 2.5 0 0.5 1 1.5 IL − Load Current − A 2 0 Figure 26. SUPPLY CURRENT (ENABLED) vs JUNCTION TEMPERATURE SUPPLY CURRENT (DISABLED) vs JUNCTION TEMPERATURE VI(IN) = 5.5 V Supply Current (Disabled) − µ A Supply Current (Enabled) − µ A 2 5 VI(IN) = 5 V 55 VI(IN) = 4 V 45 VI(IN) = 3.3 V VI(IN) = 5.5 V VI(IN) = 5 V 4 3 2 1 VI(IN) = 4 V VI(IN) = 3.3 V 0 VI(IN) = 2.7 V VI(IN) = 2.7 V 35 −1 −50 −25 0 25 50 75 100 125 TJ − Junction Temperature − °C Figure 27. 14 1 1.5 IL − Load Current − A Figure 25. 75 65 0.5 Submit Documentation Feedback 150 −50 −25 0 25 50 75 100 125 TJ − Junction Temperature − °C 150 Figure 28. Copyright © 1998–2007, Texas Instruments Incorporated Product Folder Link(s): TPS2020 TPS2021 TPS2022 TPS2023 TPS2024 TPS2020,, TPS2021 TPS2022, TPS2023, TPS2024 www.ti.com SLVS175C – DECEMBER 1998 – REVISED SEPTEMBER 2007 SUPPLY CURRENT (ENABLED) vs INPUT VOLTAGE SUPPLY CURRENT (DISABLED) vs INPUT VOLTAGE 75 5 TJ = 85°C Supply Current (Disabled) − µ A Supply Current (Enabled) − µ A TJ = 125°C 65 55 45 TJ = 25°C 3 TJ = 85°C 2 1 TJ = 25°C 0 TJ = 0°C TJ = 0°C TJ = −40°C TJ = −40°C 35 −1 2.5 3 3.5 4 4.5 5 VI − Input Voltage − V 5.5 6 2.5 3 3.5 4 4.5 5 VI − Input Voltage − V Figure 29. Figure 30. SHORT-CIRCUIT CURRENT LIMIT vs INPUT VOLTAGE SHORT-CIRCUIT CURRENT LIMIT vs JUNCTION TEMPERATURE 3.5 5.5 6 3.5 TPS2024 TPS2024 I OS − Short-Circuit Current Limit − A TA = 25°C I OS − Short-Circuit Current Limit − A TJ = 125°C 4 3 2.5 TPS2023 2 TPS2022 1.5 1 TPS2021 0.5 TPS2020 0 2 3 4 5 VI − Input Voltage − V Figure 31. Copyright © 1998–2007, Texas Instruments Incorporated 6 3 2.5 TPS2023 2 1.5 1 TPS2022 TPS2021 TPS2020 0.5 0 −50 −25 0 25 50 75 TJ − Junction Temperature − °C 100 Figure 32. Submit Documentation Feedback Product Folder Link(s): TPS2020 TPS2021 TPS2022 TPS2023 TPS2024 15 TPS2020,, TPS2021 TPS2022, TPS2023, TPS2024 www.ti.com SLVS175C – DECEMBER 1998 – REVISED SEPTEMBER 2007 − Static Drain-Source On-State Resistance − m Ω IO = 0.18 A 50 TJ = 125°C 40 TJ = 25°C 30 TJ = −40°C 3 3.5 4.5 5 4 VI − Input Voltage − V 5.5 6 60 IO = 0.18 A 50 VI = 2.7 V 40 VI = 3.3 V 30 VI = 5.5 V 20 −50 −25 r 20 2.5 DS(on) 60 0 50 75 100 25 TJ − Junction Temperature − °C 125 150 Figure 34. STATIC DRAIN-SOURCE ON-STATE RESISTANCE vs INPUT VOLTAGE STATIC DRAIN-SOURCE ON-STATE RESISTANCE vs JUNCTION TEMPERATURE 60 IO = 1.8 A 50 TJ = 125°C 40 TJ = 25°C TJ = −40°C 30 20 3 3.5 4 4.5 5 VI − Input Voltage − V Submit Documentation Feedback 5.5 6 DS(on) − Static Drain-Source On-State Resistance − m Ω Figure 33. Figure 35. 16 STATIC DRAIN-SOURCE ON-STATE RESISTANCE vs JUNCTION TEMPERATURE r r DS(on) − Static Drain-Source On-State Resistance − m Ω r DS(on) − Static Drain-Source On-State Resistance − m Ω STATIC DRAIN-SOURCE ON-STATE RESISTANCE vs INPUT VOLTAGE 60 IO = 1.8 A 50 VI = 3.3 V VI = 4 V VI = 5.5 V 40 30 20 −50 −25 50 75 100 0 25 TJ − Junction Temperature − °C 125 150 Figure 36. Copyright © 1998–2007, Texas Instruments Incorporated Product Folder Link(s): TPS2020 TPS2021 TPS2022 TPS2023 TPS2024 TPS2020,, TPS2021 TPS2022, TPS2023, TPS2024 www.ti.com SLVS175C – DECEMBER 1998 – REVISED SEPTEMBER 2007 UNDERVOLTAGE LOCKOUT 2.5 VI − Input Voltage − V 2.4 Start Threshold 2.3 2.2 Stop Threshold 2.1 2 −50 0 50 100 TJ − Temperature − °C 150 Figure 37. Copyright © 1998–2007, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Link(s): TPS2020 TPS2021 TPS2022 TPS2023 TPS2024 17 TPS2020,, TPS2021 TPS2022, TPS2023, TPS2024 www.ti.com SLVS175C – DECEMBER 1998 – REVISED SEPTEMBER 2007 APPLICATION INFORMATION TPS2024 2,3 Power Supply 2.7 V to 5.5 V IN 0.1 µF 10 kΩ OUT 6,7,8 Load 0.1 µF 5 4 22 µF OC EN GND 1 Figure 38. Typical Application POWER SUPPLY CONSIDERATIONS A 0.01-μF to 0.1-μF ceramic bypass capacitor between IN and GND, close to the device, is recommended. Placing a high-value electrolytic capacitor on the output and input pins is recommended when the output load is heavy. This precaution reduces power supply transients that may cause ringing on the input. Additionally, bypassing the output with a 0.01-μF to 0.1-μF ceramic capacitor improves the immunity of the device to short-circuit transients. OVERCURRENT A sense FET checks for overcurrent conditions. Unlike current-sense resistors, sense FETs do not increase the series resistance of the current path. When an overcurrent condition is detected, the device maintains a constant output current and reduces the output voltage accordingly. Complete shutdown occurs only if the fault is present long enough to activate thermal limiting. Three possible overload conditions can occur. In the first condition, the output has been shorted before the device is enabled or before VI(IN) has been applied, see Figure 6. The TPS202x senses the short and immediately switches into a constant-current output. In the second condition, the excessive load occurs while the device is enabled. At the instant the excessive load occurs, very high currents may flow for a short time before the current-limit circuit can react (see Figures 13–22). After the current-limit circuit has tripped (reached the overcurrent trip threshhold) the device switches into constant-current mode. In the third condition, the load has been gradually increased beyond the recommended operating current. The current is permitted to rise until the current-limit threshold is reached or until the thermal limit of the device is exceeded (see Figures 7–11). The TPS202x is capable of delivering current up to the current-limit threshold without damaging the device. Once the threshold has been reached, the device switches into its constant-current mode. OC RESPONSE The OC open-drain output is asserted (active low) when an overcurrent or overtemperature condition is encountered. The output remains asserted until the overcurrent or overtemperature condition is removed. Connecting a heavy capacitive load to an enabled device can cause momentary false overcurrent reporting from the inrush current flowing through the device, charging the downstream capacitor. An RC filter can be connected to the OC pin to reduce false overcurrent reporting. Using low-ESR electrolytic capacitors on the output lowers the inrush current flow through the device during hot-plug events by providing a low impedance energy source, thereby reducing erroneous overcurrent reporting. 18 Submit Documentation Feedback Copyright © 1998–2007, Texas Instruments Incorporated Product Folder Link(s): TPS2020 TPS2021 TPS2022 TPS2023 TPS2024 TPS2020,, TPS2021 TPS2022, TPS2023, TPS2024 www.ti.com SLVS175C – DECEMBER 1998 – REVISED SEPTEMBER 2007 TPS202x TPS202x GND OUT IN OUT IN EN V+ V+ GND OUT IN OUT OUT IN OUT OC EN OC Rpullup Rpullup Rfilter Cfilter Figure 39. Typical Circuit for OC Pin and RC Filter for Damping Inrush OC Responses POWER DISSIPATION AND JUNCTION TEMPERATURE The low on-resistance on the n-channel MOSFET allows small surface-mount packages, such as SOIC, to pass large currents. The thermal resistances of these packages are high compared to those of power packages; it is good design practice to check power dissipation and junction temperature. The first step is to find rDS(on) at the input voltage and operating temperature. As an initial estimate, use the highest operating ambient temperature of interest and read rDS(on) from Figures 33–36. Next, calculate the power dissipation using: PD = rDS(on) × I2 Finally, calculate the junction temperature: TJ = PD × RθJA + TA where: TA = Ambient temperature °C RθJA = Thermal resistance—SOIC = 172°C/W, PDIP = 106°C/W Compare the calculated junction temperature with the initial estimate. If they do not agree within a few degrees, repeat the calculation, using the calculated value as the new estimate. Two or three iterations are generally sufficient to get an acceptable answer. THERMAL PROTECTION Thermal protection prevents damage to the IC when heavy-overload or short-circuit faults are present for extended periods of time. The faults force the TPS202x into constant current mode, which causes the voltage across the high-side switch to increase; under short-circuit conditions, the voltage across the switch is equal to the input voltage. The increased dissipation causes the junction temperature to rise to high levels. The protection circuit senses the junction temperature of the switch and shuts it off. Hysteresis is built into the thermal sense circuit, and after the device has cooled approximately 20 degrees, the switch turns back on. The switch continues to cycle in this manner until the load fault or input power is removed. UNDERVOLTAGE LOCKOUT (UVLO) An undervoltage lockout ensures that the power switch is in the off state at powerup. Whenever the input voltage falls below approximately 2 V, the power switch is quickly turned off. This facilitates the design of hot-insertion systems where it is not possible to turn off the power switch before input power is removed. The UVLO also keeps the switch from being turned on until the power supply has reached at least 2 V, even if the switch is enabled. Upon reinsertion, the power switch is turned on, with a controlled rise time to reduce EMI and voltage overshoots. Copyright © 1998–2007, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Link(s): TPS2020 TPS2021 TPS2022 TPS2023 TPS2024 19 TPS2020,, TPS2021 TPS2022, TPS2023, TPS2024 www.ti.com SLVS175C – DECEMBER 1998 – REVISED SEPTEMBER 2007 GENERIC HOT-PLUG APPLICATIONS (See Figure 40) In many applications it may be necessary to remove modules or pc boards while the main unit is still operating. These are considered hot-plug applications. Such implementations require the control of current surges seen by the main power supply and the card being inserted. The most effective way to control these surges is to limit and slowly ramp the current and voltage being applied to the card, similar to the way in which a power supply normally turns on. Because of the controlled rise times and fall times of the TPS202x series, these devices can be used to provide a softer start-up to devices being hot-plugged into a powered system. The UVLO feature of the TPS202x also ensures the switch is off after the card has been removed, and the switch remains off during the next insertion. The UVLO feature ensures a soft start with a controlled rise time for every insertion of the card or module. PC Board TPS2024 GND OUT Power Supply 2.7 V to 5.5 V 1000 µF Optimum 0.1 µF IN OUT IN OUT EN OC Block of Circuitry Overcurrent Response Figure 40. Typical Hot-Plug Implementation By placing the TPS202x between the VCC input and the rest of the circuitry, the input power reaches this device first after insertion. The typical rise time of the switch is approximately 9 ms, providing a slow voltage ramp at the output of the device. This implementation controls system surge currents and provides a hot-plugging mechanism for any device. 20 Submit Documentation Feedback Copyright © 1998–2007, Texas Instruments Incorporated Product Folder Link(s): TPS2020 TPS2021 TPS2022 TPS2023 TPS2024 PACKAGE OPTION ADDENDUM www.ti.com 25-Feb-2022 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) TPS2020D ACTIVE SOIC D 8 75 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 2020 TPS2020DR ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 2020 TPS2021D ACTIVE SOIC D 8 75 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 2021 TPS2021DG4 ACTIVE SOIC D 8 75 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 2021 TPS2021DR ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 2021 TPS2021DRG4 ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 2021 TPS2021P ACTIVE PDIP P 8 50 RoHS & Green NIPDAU N / A for Pkg Type -40 to 125 TPS2021P TPS2022D ACTIVE SOIC D 8 75 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 2022 TPS2022DG4 ACTIVE SOIC D 8 75 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 2022 TPS2022DR ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 2022 TPS2023D ACTIVE SOIC D 8 75 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 2023 TPS2023DR ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 2023 TPS2023P ACTIVE PDIP P 8 50 RoHS & Green NIPDAU N / A for Pkg Type -40 to 125 TPS2023P TPS2024D ACTIVE SOIC D 8 75 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 2024 TPS2024DR ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 2024 TPS2024DRG4 ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 2024 TPS2024P ACTIVE PDIP P 8 50 RoHS & Green NIPDAU N / A for Pkg Type -40 to 125 TPS2024P (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. Addendum-Page 1 Samples PACKAGE OPTION ADDENDUM www.ti.com 25-Feb-2022 OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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