TPS2030, TPS2031
TPS2032, TPS2033, TPS2034
www.ti.com
SLVS190C – DECEMBER 1998 – REVISED OCTOBER 2007
POWER-DISTRIBUTION SWITCHES
FEATURES
1
•
•
•
•
•
•
•
•
•
•
33-mΩ (5-V Input) High-Side MOSFET Switch
Short-Circuit and Thermal Protection
Overcurrent Logic Output
Operating Range: 2.7 V to 5.5 V
Logic-Level Enable Input
Typical Rise Time: 6.1 ms
Undervoltage Lockout
Maximum Standby Supply Current: 10 μA
No Drain-Source Back-Gate Diode
Available in 8-pin SOIC and PDIP Packages
•
•
•
Ambient Temperature Range, –40°C to 85°C
2-kV Human-Body-Model, 200-V
Machine-Model ESD Protection
UL Listed– File No. E169910
D OR P PACKAGE
(TOP VIEW)
GND
IN
IN
EN
1
8
2
7
3
6
4
5
OUT
OUT
OUT
OC
DESCRIPTION
The TPS203x family of power distribution switches is intended for applications where heavy capacitive loads and
short circuits are likely to be encountered. These devices are 50-mΩ N-channel MOSFET high-side power
switches. The switch is controlled by a logic enable compatible with 5-V logic and 3-V logic. Gate drive is
provided by an internal charge pump designed to control the power-switch rise times and fall times to minimize
current surges during switching. The charge pump requires no external components and allows operation from
supplies as low as 2.7 V.
When the output load exceeds the current-limit threshold or a short is present, the TPS203x limits the output
current to a safe level by switching into a constant-current mode, pulling the overcurrent (OC) logic output low.
When continuous heavy overloads and short circuits increase the power dissipation in the switch, causing the
junction temperature to rise, a thermal protection circuit shuts off the switch to prevent damage. Recovery from a
thermal shutdown is automatic once the device has cooled sufficiently. Internal circuitry ensures the switch
remains off until valid input voltage is present.
The TPS203x devices differ only in short-circuit current threshold. The TPS2030 limits at 0.3-A load, the
TPS2031 at 0.9-A load, the TPS2032 at 1.5-A load, the TPS2033 at 2.2-A load, and the TPS2034 at 3-A load
(see Available Options). The TPS203x is available in an 8-pin small-outline integrated-circuit (SOIC) package
and in an 8-pin dual-in-line (DIP) package and operates over a junction temperature range of –40°C to 125°C.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 1998–2007, Texas Instruments Incorporated
TPS2030, TPS2031
TPS2032, TPS2033, TPS2034
www.ti.com
SLVS190C – DECEMBER 1998 – REVISED OCTOBER 2007
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
AVAILABLE OPTIONS
TA
ENABLE
–40°C to 85°C
(1)
(2)
PACKAGED DEVICES (1)
RECOMMENDED MAXIMUM
CONTINUOUS LOAD
CURRENT
(A)
TYPICAL SHORT-CIRCUIT
CURRENT LIMIT AT 25°C
(A)
SMALL OUTLINE
(D) (2)
PLASTIC DIP
(P)
0.2
0.3
TPS2030D
TPS2030P
0.6
0.9
TPS2031D
TPS2031P
1
1.5
TPS2032D
TPS2032P
1.5
2.2
TPS2033D
TPS2033P
2
3
TPS2034D
TPS2034P
Active high
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
website at www.ti.com.
The D package is available taped and reeled. Add an R suffix to device type (e.g., TPS2030DR)
TPS2030 FUNCTIONAL BLOCK DIAGRAM
Power Switch
†
CS
IN
OUT
Charge
Pump
EN
Current
Limit
Driver
OC
UVLO
Thermal
Sense
GND
†Current
Sense
TERMINAL FUNCTIONS
TERMINAL
NO.
D OR P
I/O
EN
4
I
Enable input. Logic high turns on power switch.
GND
1
I
Ground
2, 3
I
Input voltage
5
O
Overcurrent. Logic output active low
6, 7, 8
O
Power-switch output
NAME
IN
OC
OUT
2
DESCRIPTION
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Copyright © 1998–2007, Texas Instruments Incorporated
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TPS2030, TPS2031
TPS2032, TPS2033, TPS2034
www.ti.com
SLVS190C – DECEMBER 1998 – REVISED OCTOBER 2007
DETAILED DESCRIPTION
POWER SWITCH
The power switch is an N-channel MOSFET with a maximum on-state resistance of 50 mΩ (VI(IN) = 5 V).
Configured as a high-side switch, the power switch prevents current flow from OUT to IN and IN to OUT when
disabled.
CHARGE PUMP
An internal charge pump supplies power to the driver circuit and provides the necessary voltage to pull the gate
of the MOSFET above the source. The charge pump operates from input voltages as low as 2.7 V and requires
very little supply current.
DRIVER
The driver controls the gate voltage of the power switch. To limit large current surges and reduce the associated
electromagnetic interference (EMI) produced, the driver incorporates circuitry that controls the rise times and fall
times of the output voltage. The rise and fall times are typically in the 2-ms to 9-ms range.
ENABLE (EN)
The logic enable disables the power switch, the bias for the charge pump, driver, and other circuitry to reduce the
supply current to less than 10 μA when a logic low is present on EN . A logic high input on EN restores bias to
the drive and control circuits and turns the power on. The enable input is compatible with both TTL and CMOS
logic levels.
OVERCURRENT (OC)
The OC open drain output is asserted (active low) when an overcurrent or overtemperature condition is
encountered. The output will remain asserted until the overcurrent or overtemperature condition is removed.
CURRENT SENSE
A sense FET monitors the current supplied to the load. The sense FET measures current more efficiently than
conventional resistance methods. When an overload or short circuit is encountered, the current-sense circuitry
sends a control signal to the driver. The driver, in turn, reduces the gate voltage and drives the power FET into
its saturation region, which switches the output into a constant current mode and holds the current constant while
varying the voltage on the load.
THERMAL SENSE
An internal thermal-sense circuit shuts off the power switch when the junction temperature rises to approximately
140°C. Hysteresis is built into the thermal sense circuit. After the device has cooled approximately 20°C, the
switch turns back on. The switch continues to cycle off and on until the fault is removed.
UNDERVOLTAGE LOCKOUT
A voltage sense circuit monitors the input voltage. When the input voltage is below approximately 2 V, a control
signal turns off the power switch.
Copyright © 1998–2007, Texas Instruments Incorporated
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3
TPS2030, TPS2031
TPS2032, TPS2033, TPS2034
www.ti.com
SLVS190C – DECEMBER 1998 – REVISED OCTOBER 2007
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range (unless otherwise noted) (1)
VI(IN) (2)
Input voltage range
VO(OUT) (2)
Output voltage range
VI(EN)
Input voltage range
IO(OUT)
Continuous output current
VALUE
UNIT
–0.3 to 6
V
–0.3 to VI(IN) + 0.3
V
–0.3 to 6
V
Internally limited
Continuous total power dissipation
See Dissipation Rating Table
°C
TJ
Operating virtual junction temperature range
–40 to 125
Tstg
Storage temperature range
–65 to 150
°C
2
kV
Machine model
200
V
Charged device model (CDM)
750
V
Human body model
ESD
(1)
(2)
Electrostatic discharge protection:
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltages are with respect to GND.
DISSIPATION RATING TABLE
TA ≤ 25°C
POWER RATING
DERATING FACTOR
ABOVE TA = 25°C
TA = 70°C
POWER RATING
TA = 85°C
POWER RATING
D
725 mW
5.8 mW°C
464 mW
377 mW
P
1175 mW
9.4 mW°C
752 mW
611 mW
PACKAGE
RECOMMENDED OPERATING CONDITIONS
Input voltage
IO
TJ
4
Continuous output current
MIN
MAX
VI(IN)
2.7
5.5
V
VI(EN)
0
5.5
V
TPS2030
0
0.2
TPS2031
0
0.6
TPS2032
0
1
TPS2033
0
1.5
TPS2034
0
2
–40
125
Operating virtual junction temperature
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UNIT
A
°C
Copyright © 1998–2007, Texas Instruments Incorporated
Product Folder Link(s): TPS2030 TPS2031 TPS2032 TPS2033 TPS2034
TPS2030, TPS2031
TPS2032, TPS2033, TPS2034
www.ti.com
SLVS190C – DECEMBER 1998 – REVISED OCTOBER 2007
ELECTRICAL CHARACTERISTICS
over recommended operating junction temperature range, VI(IN) = 5.5 V, IO = rated current, EN = 5 V (unless otherwise noted)
POWER SWITCH
TEST CONDITIONS (1)
PARAMETER
rDS(on)
tr
tf
(1)
Static drain-source on-state resistance
Rise time, output
Fall time, output
TYP
MAX
VI(IN) = 5 V,
TJ = 25°C,
IO = 1.8 A
MIN
33
36
VI(IN) = 5 V,
TJ = 85°C,
IO = 1.8 A
38
46
VI(IN) = 5 V,
TJ = 125°C,
IO = 1.8 A
44
50
VI(IN) = 3.3 V,
TJ = 25°C,
IO = 1.8 A
37
41
VI(IN) = 3.3 V,
TJ = 85°C,
IO = 1.8 A
43
52
VI(IN) = 3.3 V,
TJ = 125°C,
IO = 1.8 A
51
61
VI(IN) = 5 V,
TJ = 25°C,
IO = 0.18 A
30
34
VI(IN) = 5 V,
TJ = 85°C,
IO = 0.18 A
35
41
VI(IN) = 5 V,
TJ = 125°C,
IO = 0.18 A
39
47
VI(IN) = 3.3 V,
TJ = 25°C,
IO = 0.18 A
33
37
VI(IN) = 3.3 V,
TJ = 85°C,
IO = 0.18 A
39
46
VI(IN) = 3.3 V,
TJ = 125°C,
IO = 0.18 A
44
56
VI(IN) = 5.5 V,
CL = 1 μF,
TJ = 25°C,
RL = 10 Ω
6.1
VI(IN) = 2.7 V,
CL = 1 μF,
TJ = 25°C,
RL = 10 Ω
8.6
VI(IN) = 5.5 V,
CL = 1 μF,
TJ = 25°C,
RL = 10 Ω
3.4
VI(IN) = 2.7 V,
CL = 1 μF,
TJ = 25°C,
RL = 10 Ω
3
UNIT
mΩ
ms
ms
Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account
separately.
ENABLE INPUT (EN)
PARAMETER
VIH
TEST CONDITIONS
MIN
2.7 V ≤ VI(IN) ≤ 5.5 V
high-level input voltage
TYP
MAX
UNIT
2
V
4.5 V ≤ VI(IN) ≤ 5.5 V
0.8
2.7 V ≤ VI(IN) ≤ 4.5 V
0.5
VIL
Low-level input voltage
II
Input current
EN = 0 V or EN = VI(IN)
ton
Turnon time
CL = 100 μF, RL = 10 Ω
20
toff
Turnoff time
CL = 100 μF, RL = 10 Ω
40
–0.5
V
μA
0.5
ms
CURRENT LIMIT
TEST CONDITIONS (1)
PARAMETER
IOS
(1)
Short-circuit output current
TJ = 25°C, VI = 5.5 V, OUT connected to GND,
Device enable into short circuit
MIN
TYP
MAX
TPS2030
0.22
0.3
0.4
TPS2031
0.66
0.9
1.1
TPS2032
1.1
1.5
1.8
TPS2033
1.65
2.2
2.7
TPS2034
2.2
3
3.8
UNIT
A
Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account
separately.
Copyright © 1998–2007, Texas Instruments Incorporated
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5
TPS2030, TPS2031
TPS2032, TPS2033, TPS2034
www.ti.com
SLVS190C – DECEMBER 1998 – REVISED OCTOBER 2007
ELECTRICAL CHARACTERISTICS (Continued)
over recommended operating junction temperature range, VI(IN) = 5.5 V, IO = rated current, EN = 5 V (unless otherwise noted)
SUPPLY CURRENT
PARAMETER
TEST CONDITIONS
Supply current, low-level output
No Load on OUT
EN = 0
Supply current, high-level output
No Load on OUT
EN = VI(IN)
Leakage current
OUT connected to ground
EN = 0
MIN
TJ = 25°C
TYP
MAX
0.3
1
40°C ≤ TJ ≤ 125°C
10
TJ = 25°C
58
75
40°C ≤ TJ ≤ 125°C
75
100
40°C ≤ TJ ≤ 125°C
10
UNIT
μA
μA
μA
UNDERVOLTAGE LOCKOUT
PARAMETER
TEST CONDITIONS
Low-level input voltage
MIN
TYP
2
Hysteresis
TJ = 25°C
MAX
2.5
100
UNIT
V
mV
OVERCURRENT (OC)
Output low voltage
IO = 10 mA, VOL(OC)
Off-state current (1)
VO = 5 V, VO = 3.3 V
(1)
6
0.4
V
1
μA
Specified by design, not production tested.
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Copyright © 1998–2007, Texas Instruments Incorporated
Product Folder Link(s): TPS2030 TPS2031 TPS2032 TPS2033 TPS2034
TPS2030, TPS2031
TPS2032, TPS2033, TPS2034
www.ti.com
SLVS190C – DECEMBER 1998 – REVISED OCTOBER 2007
PARAMETER MEASUREMENT INFORMATION
OUT
RL
tf
tr
CL
VO(OUT)
90%
10%
90%
10%
TEST CIRCUIT
50%
VI(EN)
50%
toff
ton
90%
VO(OUT)
10%
VOLTAGE WAVEFORMS
Figure 1. Test Circuit and Voltage Waveforms
TABLE OF TIMING DIAGRAMS
FIGURE
Turnon Delay and Rise Time
2
Turnoff Delay and Fall Time
3
Turnon Delay and Rise Time with 1-μF Load
4
Turnoff Delay and Rise TIME with 1-μF Load
5
Device Enabled Into Short
6
TPS2030, TPS2031, TPS2032, TPS2033, and TPS2034, Ramped Load on Enabled Device
7, 8, 9, 10, 11
TPS2034, Inrush Current
12
7.9-Ω Load Connected to an Enabled TPS2030 Device
13
3.7-Ω Load Connected to an Enabled TPS2030 Device
14
3.7-Ω Load Connected to an Enabled TPS2031 Device
15
2.6-Ω Load Connected to an Enabled TPS2031 Device
16
2.6-Ω Load Connected to an Enabled TPS2032 Device
17
1.2-Ω Load Connected to an Enabled TPS2032 Device
18
1.2-Ω Load Connected to an Enabled TPS2033 Device
19
0.9-Ω Load Connected to an Enabled TPS2033 Device
20
0.9-Ω Load Connected to an Enabled TPS2034 Device
21
0.5-Ω Load Connected to an Enabled TPS2034 Device
22
Copyright © 1998–2007, Texas Instruments Incorporated
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7
TPS2030, TPS2031
TPS2032, TPS2033, TPS2034
www.ti.com
SLVS190C – DECEMBER 1998 – REVISED OCTOBER 2007
VI(EN) (5 V/div)
VI(EN) (5 V/div)
VI(EN)
VI(EN)
VI(IN) = 5 V
RL = 27 Ω
TA = 25°C
VO(OUT) (2 V/div)
VO(OUT) (2 V/div)
VIN = 5 V
RL = 27 Ω
TA = 25°C
VO(OUT)
0
2
4
6
8
10
12
14
16
18
VO(OUT)
0
20
2
4
6
10
12
14
16
18
t − Time − ms
Figure 2. Turnon Delay and Rise Time
Figure 3. Turnoff Delay and Fall Time
VI(EN) (5 V/div)
20
VI(EN) (5 V/div)
VI(EN)
VI(EN)
VO(OUT) (2 V/div)
VO(OUT) (2 V/div)
VI(IN) = 5 V
CL = 1 µF
RL = 27 Ω
TA = 25°C
VO(OUT)
0
8
8
t − Time − ms
2
4
6
8
10
12
14
16
18
VI(IN) = 5 V
CL = 1 µF
RL = 27 Ω
TA = 25°C
VO(OUT)
20
0
2
4
6
8
10
12
14
16
18
20
t − Time − ms
t − Time − ms
Figure 4. Turnon Delay and Rise Time With 1-µF Load
Figure 5. Turnoff Delay and Fall Time With 1-μF Load
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TPS2032, TPS2033, TPS2034
www.ti.com
SLVS190C – DECEMBER 1998 – REVISED OCTOBER 2007
VO(OC) (5 V/div)
VI(EN)
VI(EN) (5 V/div)
VO(OC)
VI(IN) = 5 V
TA = 25°C
VI(IN) = 5 V
TA = 25°C
TPS2034
TPS2033
IO(OUT) (500 mA/div)
TPS2032
TPS2031
TPS2030
IO(OUT)
IO(OUT)
IO(OUT) (1 A/div)
0
1
2
3
4
5
6
7
8
9
10
0
20
40
60
t − Time − ms
80 100 120 140 160 180 200
t − Time − ms
Figure 6. Device Enabled Into Short
Figure 7. TPS2030, Ramped Load on Enabled Device
VO(OC) (5 V/div)
VO(OC)
VO(OC) (5 V/div)
VO(OC)
VI(IN) = 5 V
TA = 25°C
VI(IN) = 5 V
TA = 25°C
IO(OUT) (1 A/div)
IO(OUT) (1 A/div)
IO(OUT)
IO(OUT)
0
20
40
60
80 100 120 140 160 180 200
0
20
40
60
80 100 120 140 160 180 200
t − Time − ms
t − Time − ms
Figure 8. TPS2031, Ramped Load on Enabled Device
Figure 9. TPS2032, Ramped Load on Enabled Device
Copyright © 1998–2007, Texas Instruments Incorporated
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9
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TPS2032, TPS2033, TPS2034
www.ti.com
SLVS190C – DECEMBER 1998 – REVISED OCTOBER 2007
VO(OC) (5 V/div)
VO(OC) (5 V/div)
VO(OC)
VO(OC)
VI(IN) = 5 V
TA = 25°C
VI(IN) = 5 V
TA = 25°C
IO(OUT) (1 A/div)
IO(OUT) (1 A/div)
IO(OUT)
IO(OUT)
0
20
40
60
0
80 100 120 140 160 180 200
20
40
60
80 100 120 140 160 180 200
t − Time − ms
t − Time − ms
Figure 10. TPS2033, Ramped Load on Enabled Device
Figure 11. TPS2034, Ramped Load on Enabled Device
VI(EN)
VO(OC) (5 V/div)
VI(EN) (5 V/div)
VO(OC)
IO(OUT) (200 mA/div)
470 µF
150 µF
II(IN) (500 mA/div)
II(IN)
RL = 10 Ω
TA = 25°C
47 µF
0
1
2
3
4
5
6
7
8
t − Time − ms
Figure 12. TPS2034, Inrush Current
10
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9
VI(IN) = 5 V
RL = 7.9 Ω
TA = 25°C
IO(OUT)
10
0
200 400 600 800 1000 1200 1400 1600 1800 2000
t − Time − µs
Figure 13. 7.9-Ω Load Connected to an
Enabled TPS2030 Device
Copyright © 1998–2007, Texas Instruments Incorporated
Product Folder Link(s): TPS2030 TPS2031 TPS2032 TPS2033 TPS2034
TPS2030, TPS2031
TPS2032, TPS2033, TPS2034
www.ti.com
SLVS190C – DECEMBER 1998 – REVISED OCTOBER 2007
VO(OC) (5 V/div)
VO(OC) (5 V/div)
VO(OC)
VO(OC)
VI(IN) = 5 V
RL = 3.7 Ω
TA = 25°C
VI(IN) = 5 V
RL = 3.7 Ω
TA = 25°C
IO(OUT) (500 mA/div)
IO(OUT)
IO(OUT) (1 A/div)
IO(OUT)
0
50 100 150 200 250 300 350 400 450 500
0
t − Time − µs
200 400 600 800 1000 1200 1400 1600 1800 2000
t − Time − µs
Figure 14. 3.7-Ω Load Connected to an
Enabled TPS2030 Device
Figure 15. 3.7-Ω Load Connected to an
Enabled TPS2031 Device
VO(OC)
VO(OC) (5 V/div)
VO(OC) (5 V/div)
VO(OC)
VI(IN) = 5 V
RL = 2.6 Ω
TA = 25°C
VI(IN) = 5 V
RL = 2.6 Ω
TA = 25°C
IO(OUT) (1 A/div)
IO(OUT)
IO(OUT) (1 A/div)
IO(OUT)
0
50 100 150 200 250 300 350 400 450 500
t − Time − µs
Figure 16. 2.6-Ω Load Connected to an
Enabled TPS2031 Device
Copyright © 1998–2007, Texas Instruments Incorporated
0
200 400 600 800 1000 1200 1400 1600 1800 2000
t − Time − µs
Figure 17. 2.6-Ω Load Connected to an
Enabled TPS2032 Device
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SLVS190C – DECEMBER 1998 – REVISED OCTOBER 2007
VO(OC) (5 V/div)
VO(OC) (5 V/div)
VO(OC)
VO(OC)
VI(IN) = 5 V
RL = 1.2 Ω
TA = 25°C
IO(OUT) (1 A/div)
IO(OUT) (2 A/div)
IO(OUT)
VI(IN) = 5 V
RL = 1.2 Ω
TA = 25°C
IO(OUT)
0
100 200 300 400 500 600 700 800 900 1000
0
t − Time − µs
100 200 300 400 500 600 700 800 900 1000
t − Time − µs
Figure 18. 1.2-Ω Load Connected to an
Enabled TPS2032 Device
Figure 19. 1.2-Ω Load Connected to an
Enabled TPS2033 Device
VO(OC) (5 V/div)
VO(OC) (5 V/div)
VO(OC)
VO(OC)
VI(IN) = 5 V
RL = 0.9 Ω
TA = 25°C
VI(IN) = 5 V
RL = 0.9 Ω
TA = 25°C
IO(OUT) (2 A/div)
IO(OUT) (5 A/div)
IO(OUT)
IO(OUT)
0
100 200 300 400 500 600 700 800 900 1000
t − Time − µs
Figure 20. 0.9-Ω Load Connected to an
Enabled TPS2033 Device
12
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0
100 200 300 400 500 600 700 800 900 1000
t − Time − µs
Figure 21. 0.9-Ω Load Connected to an
Enabled TPS2034 Device
Copyright © 1998–2007, Texas Instruments Incorporated
Product Folder Link(s): TPS2030 TPS2031 TPS2032 TPS2033 TPS2034
TPS2030, TPS2031
TPS2032, TPS2033, TPS2034
www.ti.com
SLVS190C – DECEMBER 1998 – REVISED OCTOBER 2007
VO(OC) (5 V/div)
VO(OC)
VI(IN) = 5 V
RL = 0.5 Ω
TA = 25°C
IO(OUT) (5 A/div)
IO(OUT)
50 100 150 200 250 300 350 400 450
0
500
t − Time − µs
Figure 22. 0.5-Ω Load Connected to an
Enabled TPS2034 Device
TYPICAL CHARACTERISTICS
TABLE OF GRAPHS
FIGURE
td(on)
Turnon delay time
vs Output voltage
23
td(off)
Turnoff delay time
vs Input voltage
24
tr
Rise time
vs Load current
25
tf
Fall time
vs Load current
26
Supply current (enabled)
vs Junction temperature
27
Supply current (disabled)
vs Junction temperature
28
Supply current (enabled)
vs Input voltage
29
Supply current (disabled)
vs Input voltage
30
vs Input voltage
31
vs Junction temperature
32
vs Input voltage
33
vs Junction temperature
34
vs Input voltage
35
vs Junction temperature
36
Undervoltage lockout
37
IOS
Short-circuit current limit
rDS(on)
Static drain-source on-state resistance
VI
Input voltage
Copyright © 1998–2007, Texas Instruments Incorporated
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13
TPS2030, TPS2031
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www.ti.com
SLVS190C – DECEMBER 1998 – REVISED OCTOBER 2007
TURNON DELAY TIME
vs
OUTPUT VOLTAGE
TURNOFF DELAY TIME
vs
INPUT VOLTAGE
18
7.5
6.5
6
5.5
5
t d(off)
t d(on) − Turn-on Delay Time − ms
7
− Turn-off Delay Time − ms
TA = 25°C
CL = 1 µF
4.5
TA = 25°C
CL = 1 µF
17.5
17
16.5
4
3.5
2.5
3
3.5
4
4.5
5
VI − Input Voltage − V
5.5
16
2.5
6
3
3.5
4
4.5
5
VI − Input Voltage − V
Figure 23.
Figure 24.
RISE TIME
vs
LOAD CURRENT
FALL TIME
vs
LOAD CURRENT
6.5
5.5
6
3.5
TA = 25°C
CL = 1 µF
TA = 25°C
CL = 1 µF
t f − Fall Time − ms
t r − Rise Time − ms
3.25
6
5.5
3
2.75
5
2.5
0
0.5
1
1.5
IL − Load Current − A
Figure 25.
14
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2
0
0.5
1
1.5
IL − Load Current − A
2
Figure 26.
Copyright © 1998–2007, Texas Instruments Incorporated
Product Folder Link(s): TPS2030 TPS2031 TPS2032 TPS2033 TPS2034
TPS2030, TPS2031
TPS2032, TPS2033, TPS2034
www.ti.com
SLVS190C – DECEMBER 1998 – REVISED OCTOBER 2007
SUPPLY CURRENT (ENABLED)
vs
JUNCTION TEMPERATURE
SUPPLY CURRENT (DISABLED)
vs
JUNCTION TEMPERATURE
5
VI(IN) = 5.5 V
Supply Current (Disabled) − µ A
Supply Current (Enabled) − µ A
75
65
VI(IN) = 5 V
55
VI(IN) = 4 V
45
VI(IN) = 3.3 V
VI(IN) = 5.5 V
VI(IN) = 5 V
4
3
2
1
VI(IN) = 4 V
VI(IN) = 3.3 V
0
VI(IN) = 2.7 V
VI(IN) = 2.7 V
35
−1
−50 −25
0
25
50
75
100 125
TJ − Junction Temperature − °C
150
−50 −25
0
25
50
75
100 125
TJ − Junction Temperature − °C
Figure 27.
Figure 28.
SUPPLY CURRENT (ENABLED)
vs
INPUT VOLTAGE
SUPPLY CURRENT (DISABLED)
vs
INPUT VOLTAGE
75
150
5
TJ = 85°C
Supply Current (Disabled) − µ A
Supply Current (Enabled) − µ A
TJ = 125°C
65
55
45
TJ = 25°C
TJ = 125°C
4
3
TJ = 85°C
2
1
TJ = 25°C
0
TJ = 0°C
TJ = 0°C
TJ = −40°C
TJ = −40°C
35
−1
2.5
3
3.5
4
4.5
5
VI − Input Voltage − V
Figure 29.
Copyright © 1998–2007, Texas Instruments Incorporated
5.5
6
2.5
3
3.5
4
4.5
5
VI − Input Voltage − V
5.5
6
Figure 30.
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15
TPS2030, TPS2031
TPS2032, TPS2033, TPS2034
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SLVS190C – DECEMBER 1998 – REVISED OCTOBER 2007
SHORT-CIRCUIT CURRENT LIMIT
vs
INPUT VOLTAGE
SHORT-CIRCUIT CURRENT LIMIT
vs
JUNCTION TEMPERATURE
3.5
3.5
TPS2034
TPS2034
I OS − Short-Circuit Current Limit − A
I OS − Short-Circuit Current Limit − A
TA = 25°C
3
2.5
TPS2033
2
TPS2032
1.5
1
TPS2031
0.5
TPS2030
0
2
3
5
4
VI − Input Voltage − V
3
2.5
TPS2033
2
TPS2031
1
TPS2030
0.5
0
−50
6
TPS2032
1.5
25
−25
0
50
75
TJ − Junction Temperature − °C
Figure 31.
Figure 32.
50
TJ = 125°C
40
TJ = 25°C
30
TJ = −40°C
3
3.5
4
4.5
5
VI − Input Voltage − V
Figure 33.
16
− Static Drain-Source On-State Resistance − m Ω
IO = 0.18 A
Submit Documentation Feedback
5.5
6
DS(on)
60
r
r DS(on) − Static Drain-Source On-State Resistance − m Ω
STATIC DRAIN-SOURCE ON-STATE RESISTANCE
vs
INPUT VOLTAGE
20
2.5
100
STATIC DRAIN-SOURCE ON-STATE RESISTANCE
vs
JUNCTION TEMPERATURE
60
IO = 0.18 A
50
VI = 2.7 V
40
VI = 3.3 V
30
VI = 5.5 V
20
−50 −25
50
75 100
0
25
TJ − Junction Temperature − °C
125
150
Figure 34.
Copyright © 1998–2007, Texas Instruments Incorporated
Product Folder Link(s): TPS2030 TPS2031 TPS2032 TPS2033 TPS2034
TPS2030, TPS2031
TPS2032, TPS2033, TPS2034
SLVS190C – DECEMBER 1998 – REVISED OCTOBER 2007
STATIC DRAIN-SOURCE ON-STATE RESISTANCE
vs
JUNCTION TEMPERATURE
50
TJ = 125°C
40
TJ = 25°C
TJ = −40°C
30
20
3
3.5
4.5
5
4
VI − Input Voltage − V
5.5
6
DS(on)
− Static Drain-Source On-State Resistance − m Ω
STATIC DRAIN-SOURCE ON-STATE RESISTANCE
vs
INPUT VOLTAGE
60
IO = 1.8 A
60
IO = 1.8 A
50
VI = 3.3 V
VI = 4 V
40
VI = 5.5 V
30
20
−50 −25
r
r
DS(on)
− Static Drain-Source On-State Resistance − m Ω
www.ti.com
0
25
50
75 100
TJ − Junction Temperature − °C
Figure 35.
125
150
Figure 36.
UNDERVOLTAGE LOCKOUT
2.5
VI − Input Voltage − V
2.4
Start Threshold
2.3
2.2
Stop Threshold
2.1
2
−50
0
50
100
TJ − Temperature − °C
150
Figure 37.
Copyright © 1998–2007, Texas Instruments Incorporated
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17
TPS2030, TPS2031
TPS2032, TPS2033, TPS2034
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SLVS190C – DECEMBER 1998 – REVISED OCTOBER 2007
APPLICATION INFORMATION
TPS2034
2,3
Power Supply
2.7 V to 5.5 V
IN
0.1 µF
10 kΩ
OUT
6,7,8
Load
0.1 µF
5
4
22 µF
OC
EN
GND
1
Figure 38. Typical Application
POWER SUPPLY CONSIDERATIONS
A 0.01-μF to 0.1-μF ceramic bypass capacitor between IN and GND, close to the device, is recommended.
Placing a high-value electrolytic capacitor on the output and input pins is recommended when the output load is
heavy. This precaution reduces power supply transients that may cause ringing on the input. Additionally,
bypassing the output with a 0.01-μF to 0.1-μF ceramic capacitor improves the immunity of the device to
short-circuit transients.
OVERCURRENT
A sense FET checks for overcurrent conditions. Unlike current-sense resistors, sense FETs do not increase the
series resistance of the current path. When an overcurrent condition is detected, the device maintains a constant
output current and reduces the output voltage accordingly. Complete shutdown occurs only if the fault is present
long enough to activate thermal limiting.
Three possible overload conditions can occur. In the first condition, the output has been shorted before the
device is enabled or before VI(IN) has been applied (see Figure 6). The TPS203x senses the short and
immediately switches into a constant-current output.
In the second condition, the excessive load occurs while the device is enabled. At the instant the excessive load
occurs, very high currents may flow for a short time before the current-limit circuit can react (see Figure 13
through Figure 22). After the current-limit circuit has tripped (reached the overcurrent trip threshold) the device
switches into constant-current mode.
In the third condition, the load has been gradually increased beyond the recommended operating current. The
current is permitted to rise until the current-limit threshold is reached or until the thermal limit of the device is
exceeded (see Figure 7 through Figure 11). The TPS203x is capable of delivering current up to the current-limit
threshold without damaging the device. Once the threshold has been reached, the device switches into its
constant-current mode.
OC RESPONSE
The OC open-drain output is asserted (active low) when an overcurrent or overtemperature condition is
encountered. The output will remain asserted until the overcurrent or overtemperature condition is removed.
Connecting a heavy capacitive load to an enabled device can cause momentary false overcurrent reporting from
the inrush current flowing through the device, charging the downstream capacitor. An RC filter can be connected
to the OC pin to reduce false overcurrent reporting. Using low-ESR electrolytic capacitors on the output lowers
the inrush current flow through the device during hot-plug events by providing a low impedance energy source,
thereby reducing erroneous overcurrent reporting.
18
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TPS2032, TPS2033, TPS2034
www.ti.com
SLVS190C – DECEMBER 1998 – REVISED OCTOBER 2007
TPS203x
TPS203x
GND
OUT
IN
OUT
IN
EN
V+
V+
GND
OUT
IN
OUT
OUT
IN
OUT
OC
EN
OC
Rpullup
Rpullup
Rfilter
Cfilter
Figure 39. Typical Circuit for OC Pin and RC Filter for Damping Inrush OC Responses
POWER DISSIPATION AND JUNCTION TEMPERATURE
The low on-resistance on the n-channel MOSFET allows small surface-mount packages, such as SOIC, to pass
large currents. The thermal resistances of these packages are high compared to those of power packages; it is
good design practice to check power dissipation and junction temperature. The first step is to find rDS(on) at the
input voltage and operating temperature. As an initial estimate, use the highest operating ambient temperature of
interest and read rDS(on) from Figure 33 through Figure 36. Next, calculate the power dissipation using:
P
D
+r
DS(on)
I2
(1)
Finally, calculate the junction temperature:
T +P
R
)T
J
D
qJA
A
(2)
Where:
TA = Ambient Temperature °C
RθJA = Thermal resistance SOIC = 172°C/W, PDIP = 106°C/W
Compare the calculated junction temperature with the initial estimate. If they do not agree within a few degrees,
repeat the calculation, using the calculated value as the new estimate. Two or three iterations are generally
sufficient to get an acceptable answer.
THERMAL PROTECTION
Thermal protection prevents damage to the IC when heavy-overload or short-circuit faults are present for
extended periods of time. The faults force the TPS203x into constant current mode, which causes the voltage
across the high-side switch to increase; under short-circuit conditions, the voltage across the switch is equal to
the input voltage. The increased dissipation causes the junction temperature to rise to high levels. The protection
circuit senses the junction temperature of the switch and shuts it off. Hysteresis is built into the thermal sense
circuit, and after the device has cooled approximately 20 degrees, the switch turns back on. The switch continues
to cycle in this manner until the load fault or input power is removed.
UNDERVOLTAGE LOCKOUT (UVLO)
An undervoltage lockout ensures that the power switch is in the off state at powerup. Whenever the input voltage
falls below approximately 2 V, the power switch is quickly turned off. This facilitates the design of hot-insertion
systems where it is not possible to turn off the power switch before input power is removed. The UVLO also
keeps the switch from being turned on until the power supply has reached at least 2 V, even if the switch is
enabled. Upon reinsertion, the power switch will be turned on, with a controlled rise time to reduce EMI and
voltage overshoots.
Copyright © 1998–2007, Texas Instruments Incorporated
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19
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SLVS190C – DECEMBER 1998 – REVISED OCTOBER 2007
GENERIC HOT-PLUG APPLICATIONS (Figure 40)
In many applications it may be necessary to remove modules or pc boards while the main unit is still operating.
These are considered hot-plug applications. Such implementations require the control of current surges seen by
the main power supply and the card being inserted. The most effective way to control these surges is to limit and
slowly ramp the current and voltage being applied to the card, similar to the way in which a power supply
normally turns on. Because of the controlled rise times and fall times of the TPS203x series, these devices can
be used to provide a softer start-up to devices being hot-plugged into a powered system. The UVLO feature of
the TPS203x also ensures the switch will be off after the card has been removed, and the switch will be off
during the next insertion. The UVLO feature ensures a soft start with a controlled rise time for every insertion of
the card or module.
PC Board
TPS2034
GND
OUT
Power
Supply
2.7 V to 5.5 V
1000 µF
Optimum
0.1 µF
IN
OUT
IN
OUT
EN
OC
Block of
Circuitry
Overcurrent Response
Figure 40. Typical Hot-Plug Implementation
By placing the TPS203x between the VCC input and the rest of the circuitry, the input power will reach this device
first after insertion. The typical rise time of the switch is approximately 9 ms, providing a slow voltage ramp at the
output of the device. This implementation controls system surge currents and provides a hot-plugging
mechanism for any device.
20
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PACKAGE OPTION ADDENDUM
www.ti.com
10-Jun-2014
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
TPS2030D
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
2030
TPS2030DG4
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
2030
TPS2030DR
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
2030
TPS2030DRG4
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
2030
TPS2030P
ACTIVE
PDIP
P
8
50
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
TPS2031D
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
2031
TPS2031DG4
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
2031
TPS2031DR
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
2031
TPS2031DRG4
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
2031
TPS2031P
ACTIVE
PDIP
P
8
50
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
TPS2032D
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
2032
TPS2032DG4
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
2032
TPS2032DR
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
2032
TPS2032DRG4
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
2032
TPS2033D
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 85
2033
TPS2033DG4
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 85
2033
TPS2033DR
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 85
2033
Addendum-Page 1
TPS2030P
TPS2031P
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
10-Jun-2014
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
TPS2033DRG4
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 85
2033
TPS2034D
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 85
2034
TPS2034DG4
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 85
2034
TPS2034DR
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 85
2034
TPS2034DRG4
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 85
2034
TPS2034P
ACTIVE
PDIP
P
8
50
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
-40 to 85
TPS2034P
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
Addendum-Page 2
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
10-Jun-2014
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
OTHER QUALIFIED VERSIONS OF TPS2030, TPS2032 :
• Automotive: TPS2030-Q1, TPS2032-Q1
NOTE: Qualified Version Definitions:
• Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects
Addendum-Page 3
PACKAGE MATERIALS INFORMATION
www.ti.com
19-Mar-2008
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
Diameter Width
(mm) W1 (mm)
A0 (mm)
B0 (mm)
K0 (mm)
P1
(mm)
W
Pin1
(mm) Quadrant
TPS2030DR
SOIC
D
8
2500
330.0
12.4
6.4
5.2
2.1
8.0
12.0
Q1
TPS2031DR
SOIC
D
8
2500
330.0
12.4
6.4
5.2
2.1
8.0
12.0
Q1
TPS2032DR
SOIC
D
8
2500
330.0
12.4
6.4
5.2
2.1
8.0
12.0
Q1
TPS2033DR
SOIC
D
8
2500
330.0
12.4
6.4
5.2
2.1
8.0
12.0
Q1
TPS2034DR
SOIC
D
8
2500
330.0
12.4
6.4
5.2
2.1
8.0
12.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
19-Mar-2008
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
TPS2030DR
SOIC
D
8
2500
340.5
338.1
20.6
TPS2031DR
SOIC
D
8
2500
340.5
338.1
20.6
TPS2032DR
SOIC
D
8
2500
340.5
338.1
20.6
TPS2033DR
SOIC
D
8
2500
340.5
338.1
20.6
TPS2034DR
SOIC
D
8
2500
340.5
338.1
20.6
Pack Materials-Page 2
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changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest
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TI warrants performance of its components to the specifications applicable at the time of sale, in accordance with the warranty in TI’s terms
and conditions of sale of semiconductor products. Testing and other quality control techniques are used to the extent TI deems necessary
to support this warranty. Except where mandated by applicable law, testing of all parameters of each component is not necessarily
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