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TPS22903, TPS22904
SLVS827D – FEBRUARY 2009 – REVISED JUNE 2015
TPS2290x Ultra-Small Low-Input-Voltage Low rON Load Switch
1 Features
2 Applications
•
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1
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Input Voltage: 1.1 V to 3.6 V
Ultralow ON-State Resistance
– rON = 66 mΩ at VIN = 3.6 V
– rON = 75 mΩ at VIN = 2.5 V
– rON = 90 mΩ at VIN = 1.8 V
– rON = 135 mΩ at VIN = 1.2 V
500-mA Maximum Continuous Switch Current
Quiescent Current < 1 μA
Shutdown Current < 1 μA
Low Control Input Threshold Enables Use of 1.2V, 1.8-V, 2.5-V, and 3.3-V Logic
Controlled Slew Rate (5 μs Maximum at 3.6 V)
Quick Output Discharge (TPS22904 Only)
ESD Performance Tested Per JESD 22
– 2000-V Human Body Model
(A114-B, Class II)
– 1000-V Charged-Device Model (C101)
4-Terminal Wafer Chip-Scale Package (WCSP)
– 0.8 mm × 0.8 mm,
0.4-mm Pitch, 0.5-mm Height
PDAs
Cell Phones
GPS Devices
MP3 Players
Digital Cameras
Peripheral Ports
Portable Instrumentation
3 Description
The TPS22903 and TPS22904 are ultra-small, low
rON single channel load switches with controlled
turnon. The device contains a P-channel MOSFET
that can operate over an input voltage range of 1.1 V
to 3.6 V. The switch is controlled by an on and off
input (ON), which is capable of interfacing directly
with low-voltage control signals. In TPS22904, a 85-Ω
on-chip load resistor is added for output quick
discharge when switch is turned off.
TPS22903 and TPS22904 are available in a spacesaving 4-terminal WCSP 0.4-mm pitch (YFP). The
devices are characterized for operation over the freeair temperature range of –40°C to 85°C.
Device Information(1)
PART NUMBER
TPS22903
TPS22904
PACKAGE
BODY SIZE (NOM)
DSBGA (4)
0.80 mm × 0.80 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Simplified Schematic
VIN
VOUT
CIN
RL
CL
+
ON
(A)
GND
ON
TPS22903
GND
OFF
GND
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TPS22903, TPS22904
SLVS827D – FEBRUARY 2009 – REVISED JUNE 2015
www.ti.com
Table of Contents
1
2
3
4
5
6
7
8
9
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Device Comparison Table.....................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
3
3
7.1
7.2
7.3
7.4
7.5
7.6
7.7
3
4
4
4
4
5
6
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Switching Characteristics ..........................................
Typical Characteristics ..............................................
Parameter Measurement Information ................ 11
Detailed Description ............................................ 12
9.1 Overview ................................................................. 12
9.2 Functional Block Diagram ....................................... 12
9.3 Feature Description................................................. 12
9.4 Device Functional Modes........................................ 12
10 Application and Implementation........................ 13
10.1 Application Information.......................................... 13
10.2 Typical Application ............................................... 13
11 Power Supply Recommendations ..................... 15
12 Layout................................................................... 15
12.1 Layout Guidelines ................................................. 15
12.2 Layout Example .................................................... 15
13 Device and Documentation Support ................. 16
13.1
13.2
13.3
13.4
13.5
Related Links ........................................................
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
16
16
16
16
16
14 Mechanical, Packaging, and Orderable
Information ........................................................... 16
4 Revision History
Changes from Revision C (April 2010) to Revision D
Page
•
Added Pin Configuration and Functions section, ESD Ratings table, Feature Description section, Device Functional
Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device
and Documentation Support section, and Mechanical, Packaging, and Orderable Information section .............................. 1
•
Removed Ordering Information table .................................................................................................................................... 1
•
Renamed Feature List table to Device Comparison table ..................................................................................................... 3
2
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SLVS827D – FEBRUARY 2009 – REVISED JUNE 2015
5 Device Comparison Table
(1)
QUICK OUTPUT
DISCHARGE (1)
MAXIMUM
OUTPUT
CURRENT
ENABLE
5 μs max
No
500 mA
Active high
5 μs max
Yes
500 mA
Active high
DEVICE
rON TYPICAL
AT 3.6 V
SLEW RATE
AT 3.6 V
TPS22903
66 mΩ
TPS22904
66 mΩ
This feature discharges the output of the switch to ground through a 85-Ω resistor, preventing the
output from floating.
6 Pin Configuration and Functions
YFP Package
20-Pin DSBGA
Top View
B
B
A
A
2
1
Laser Marking View
1 2
Bump View
Pin Functions
PIN
BALL NO.
NAME
I/O
DESCRIPTION
A1
VIN
I
Input of the switch, bypass this input with a ceramic capacitor to ground
A2
VOUT
O
Output of the switch
Switch control input, active high, do not leave floating
B1
ON
I
B2
GND
—
Ground
7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
MIN
VIN
Input voltage
VOUT
Output voltage
VON
Input voltage
PD
IMAX
TA
Operating free-air temperature
Tlead
Maximum lead temperature (10-s soldering time)
Tstg
Storage temperature
(1)
–0.3
MAX
UNIT
4
V
VIN + 0.3
V
4
V
Power dissipation at TA = 25°C
0.48
W
Maximum continuous switch current
0.5
A
85
°C
300
°C
150
°C
–0.3
–40
–65
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
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7.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
±2000
Charged-device model (CDM), per JEDEC specification JESD22C101 (2)
±1000
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
VIN
Input voltage
VOUT
Output voltage
VIH
High-level input voltage, ON
VIL
Low-level input voltage, ON
CIN
Input capacitor
MAX
1.1
0.85
UNIT
3.6
V
VIN
V
3.6
V
0.4
V
μF
1
7.4 Thermal Information
TPS22903
THERMAL METRIC (1)
YFP (DSBGA)
UNIT
20 PINS
RθJA
Junction-to-ambient thermal resistance
192.6
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
2.3
°C/W
RθJB
Junction-to-board thermal resistance
35.8
°C/W
ψJT
Junction-to-top characterization parameter
11.8
°C/W
ψJB
Junction-to-board characterization parameter
35.6
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
—
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
7.5 Electrical Characteristics
VIN = 1.1 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
TA
MIN TYP (1)
MAX
UNIT
IIN
Quiescent current
IOUT = 0, VIN = VON
Full
1
μA
IIN(OFF)
OFF-state supply current
VON = GND, OUT = Open
Full
1
μA
IIN(LEAKAGE)
OFF-state switch current
VON = GND, VOUT = 0
Full
1
μA
25°C
VIN = 3.6 V
25°C
VIN = 2.5 V
rON
ON-state resistance
IOUT = –200 mA
25°C
VIN = 1.8 V
VIN = 1.1 V
Output pulldown resistance
VIN = 3.3 V, VON = 0 (TPS22904 only),
IOUT = 30 mA
ION
ON-state input leakage current
VON = 1.1 V to 3.6 V or GND
135
mΩ
175
185
157
275
300
85
Full
115
125
Full
rPD
4
90
Full
25°C
95
110
Full
25°C
90
95
75
Full
VIN = 1.2 V
(1)
66
Full
135
Ω
1
μA
Typical values are at VIN = 3.3 V and TA = 25°C.
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SLVS827D – FEBRUARY 2009 – REVISED JUNE 2015
7.6 Switching Characteristics
VIN = 3.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
TPS22903
MIN
TYP
TPS22904
(1)
MAX
MIN
TYP (1)
MAX
UNIT
tON
Turnon time
IOUT = 100 mA, CL = 0.1 μF
0.9
1.5
0.9
1.5
μs
tOFF
Turnoff time
IOUT = 100 mA, CL = 0.1 μF
5.8
8
5.3
7
μs
tr
VOUT rise time
IOUT = 100 mA, CL = 0.1 μF
0.80
5
0.8
5
μs
tf
VOUT fall time
IOUT = 100 mA, CL = 0.1 μF
8.3
10
5.8
7
μs
(1)
Typical values are at TA = 25°C.
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7.7 Typical Characteristics
1.0
0.9
0.8
0.6
W
ON-State Resistance, rON (Ω)
0.7
0.5
0.4
0.3
0.2
0.1
0.0
0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3
Input Voltage, VIN (V)
Temperature (°C)
Figure 2. rON vs Temperature (VIN = 3.3 V)
Figure 1. rON vs VIN
200
90
180
80
160
Quiescent Current, IIN (nA)
100
Voltage Drop (mV)
70
VIN = 1.1V
60
50
VIN = 1.2V
VIN = 1.8V
40
VIN = 2.5V
140
120
100
80
60
30
VIN = 3.6V
20
40
10
20
0
0.5
0
0
0.05
0.1
0.15
0.2
0.25
0.3
Load Current (A)
0.35
0.4
0.45
0.5
1.0
1.5
2.0
2.5
3.0
Input Voltage, VIN(V)
3.5
4.0
Figure 4. Quiescent Current vs VIN
(VON = VIN, IOUT = 0)
Figure 3. Voltage Drop vs Load Current
120
250
200
IIN(OFF) Current (nA)
Quiescent Current, IIN (nA)
100
150
100
80
60
40
50
20
0
–40
25
Temperature(°C)
85
Figure 5. Quiescent Current vs Temperature
(VIN = 3.3 V, IOUT = 0)
6
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0
0.5
1.0
1.5
2.0
2.5
Input Voltage, VIN(V)
3.0
3.5
4.0
Figure 6. IIN(OFF) vs VIN (VON = 0 V)
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Typical Characteristics (continued)
250
120
225
100
200
IIN (Leakage) Current (nA)
IIN(OFF) Current (nA)
175
150
125
100
75
80
60
40
50
20
25
0
–40
25
Temperature(°C)
0
0.5
85
1.5
2.0
2.5
3.0
3.5
4.0
Input Voltage, VIN (V)
Figure 7. IIN(OFF) vs Temperature (VIN = 3.3 V)
Figure 8. IIN(Leakage) vs VIN (IOUT = 0)
250
4.0
225
3.5
VIN = 3.6 V
VIN = 3.3 V
200
3.0
VIN = 3 V
175
VIN = 2.5 V
2.5
150
VOUT (V)
IIN (Leakage) Current (nA)
1.0
125
100
2.0
VIN = 1.8 V
VIN = 1.5 V
1.5
VIN = 1.2 V
75
1.0
50
0.5
VIN = 1.1 V
25
0.0
0
–40
25
–0.5
85
0.3
Temperature (°C)
0.4
Figure 9. IIN (Leakage) vs Temperature (VIN = 3.3 V)
0.5
0.6
Input Voltage, VON (V)
0.7
0.8
Figure 10. ON-Input Threshold
7
6.0
5.5
tfall
6
tOFF
5.0
4.5
5
tON/tOFF (ms)
tIrise /tfall (ms)
4.0
4
CL = 0.1 µF
IL = 100 mA
3
3.5
3.0
CL = 0.1 µF
IL = 100 mA
2.5
2.0
2
1.5
trise
1
tON
1.0
0.5
0
–40
–20
0
20
40
60
80
100
0.0
–40
–20
0
20
40
60
80
Temperature (°C)
Temperature (°C)
Figure 11. trise (TPS22903/4) / tfall (TPS22903) vs
Temperature (VIN = 3.3 V)
Figure 12. tON (TPS22903/4) / tOFF (TPS22903) vs
Temperature (VIN = 3.3 V)
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Typical Characteristics (continued)
6
6
tfall
5
5.5
4
CL = 0.1 µF
I L = 100 mA
t OFF (µs)
tfall (µs)
CL = 0.1 µF
IL = 100 mA
3
5
t OFF
2
4.5
1
0
-40
-20
0
20
40
60
80
100
Temperature (°C)
4
-40
-20
0
Figure 13. tfall (TPS22904) vs Temperature (VIN = 3.3 V)
VON
200 mV/DIV
40
60
80
100
Figure 14. tOFF (TPS22904) vs Temperature (VIN = 3.3 V)
VON
200 mV/DIV
CL= 0.1 mF
IOUT = 100 mA
VIN = 1.2 V
IOUT
20 mA/DIV
CL= 10 mF
IOUT = 100 mA
VIN = 1.2 V
IOUT
20 mA/DIV
5 ms/DIV
20 ms/DIV
Figure 15. tON Response
Figure 16. tON Response
VON
200 mV/DIV
VON
200 mV/DIV
CL= 0.1 mF
IOUT = 100 mA
VIN = 3.3 V
IOUT
20 mA/DIV
CL= 10 mF
IOUT = 100 mA
VIN = 3.3 V
IOUT
20 mA/DIV
5 ms/DIV
20 ms/DIV
Figure 17. tON Response
8
20
Temperature (°C)
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Figure 18. tON Response
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Typical Characteristics (continued)
CL= 0.1 mF
IOUT = 100 mA
VIN = 1.2 V
CL= 10 mF
IOUT = 100 mA
VIN = 1.2 V
VON
200 mV/DIV
VON
200 mV/DIV
IOUT
20 mA/DIV
IOUT
20 mA/DIV
2 ms/DIV
100 ms/DIV
Figure 19. tOFF Response (TPS22903)
Figure 20. tOFF Response (TPS22903)
CL= 0.1 mF
IOUT = 100 mA
VIN = 3.3 V
CL= 10 mF
IOUT = 100 mA
VIN = 3.3 V
VON
200 mV/DIV
VON
200 mV/DIV
IOUT
20 mA/DIV
IOUT
20 mA/DIV
5 ms/DIV
200 ms/DIV
Figure 21. tOFF Response (TPS22903)
Figure 22. tOFF Response (TPS22903)
VON
200 mV/DIV
VON
200 mV/DIV
IOUT
20 mA/DIV
IOUT
20 mA/DIV
CL= 0.1 mF
IOUT = 100 mA
VIN = 3.3 V
CL= 0.1 mF
IOUT = 100 mA
VIN = 1.2 V
5 ms/DIV
2 ms/DIV
Figure 23. tOFF Response (TPS22904)
Figure 24. tOFF Response (TPS22904)
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Typical Characteristics (continued)
VON
200 mV/DIV
VON
200 mV/DIV
IOUT
20 mA/DIV
IOUT
20 mA/DIV
CL= 10 mF
IOUT = 100 mA
VIN = 3.3 V
CL= 10 mF
IOUT = 100 mA
VIN = 1.2 V
200 ms/DIV
100 ms/DIV
Figure 25. tOFF Response (TPS22904)
10
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Figure 26. tOFF Response (TPS22904)
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8 Parameter Measurement Information
VIN
ON
VOUT
(A)
RL
CL
+
–
TPS22903
OFF
CIN =10 x CL
GND
GND
GND
TEST CIRCUIT
1.8 V
VON
VON
VON/2
VON/2
tr
0V
tON
tOFF
VOUT/2
VOUT/2
90%
VOUT
VOH
VOUT
tf
0V
10%
90%
10%
VOL
tON/tOFF WAVEFORMS
A.
trise and tfall of the control signal is 100 ns.
Figure 27. Test Circuit and tON/tOFF Waveforms
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9 Detailed Description
9.1 Overview
The TPS22903 and TPS22904 are single-channel load switches with controlled turnon.
The devices contain a P-channel MOSFET that can operate over an input voltage range of 1.1 V to 3.6 V. The
switch is controlled by an on and off input (ON), which is capable of interfacing directly with low-voltage control
signals. In TPS22904, a 85-Ω on-chip load resistor is added for output quick discharge when switch is turned off.
Both devices are available in a space-saving 4-terminal WCSP 0.4-mm pitch (YFP).
9.2 Functional Block Diagram
VIN
A1
Turn-On Slew Rate
Controlled Driver
ON
B1
Control
Logic
A2
VOUT
ESD Protection
Output Discharge
TPS22904 Only
B2
GND
9.3 Feature Description
9.3.1 ON/OFF Control
The ON pin controls the state of the switch. Activating ON continuously holds the switch in the ON-state as there
is no fault. ON is active-high and has a low threshold, making it capable of interfacing with low voltage signals.
The ON pin is compatible with standard GPIO logic thresholds. It can be used with any microcontroller with 1.2V, 1.8-V, 2.5-V, or 3.3-V GPIOs.
9.4 Device Functional Modes
Table 1 lists the VOUT pin connections as determined by the ON pin.
Table 1. Functional Table
12
ON
(CONTROL INPUT)
VIN TO VOUT
L
OFF
ON
H
ON
OFF
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VOUT TO GND
(TPS22904 ONLY)
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10 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
10.1 Application Information
10.1.1 Input Capacitor (Optional)
To limit the voltage drop on the input supply caused by transient in-rush currents when the switch turns on into a
discharged load capacitor or short-circuit, a capacitor needs to be placed between VIN and GND. A 1-μF ceramic
capacitor, CIN, placed close to the pins, is usually sufficient. Higher values of CIN can be used to further reduce
the voltage drop during high-current application. When switching heavy loads, TI recommends to have an input
capacitor about 10 times higher than the output capacitor to avoid excessive voltage drop.
10.1.2 Output Capacitor (Optional)
Due to the integral body diode in the PMOS switch, a CIN greater than CL is highly recommended. A CL greater
than CIN can cause VOUT to exceed VIN when the system supply is removed. This could result in current flow
through the body diode from VOUT to VIN.
10.2 Typical Application
VIN
VOUT
CIN
RL
CL
+
ON
GND
ON
(A)
TPS22903
GND
OFF
GND
Figure 28. Typical Application Schematic
10.2.1 Design Requirements
Table 2 lists the design parameters for the TPS22903 device.
Table 2. Design Parameters
DESIGN PARAMETER
EXAMPLE VALUE
VIN
1.8 V
Load Current
0.3 A
Ambient Temperature
25°C
10.2.2 Detailed Design Procedure
10.2.2.1 VIN to VOUT Voltage Drop
The voltage drop from VIN to VOUT is determined by the ON-resistance of the device and the load current. RON
can be found in Electrical Characteristics and is dependent on temperature. When the value of RON is found,
Equation 1 can be used to calculate the voltage drop across the device:
ΔV = ILOAD × RON
where
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•
•
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ΔV = Voltage drop across the device
ILOAD = Load current
RON = ON-resistance of the device
(1)
At VIN = 1.8 V, the TPS22903/4 has an RON value of 90 mΩ. Using this value and the defined load current, the
above equation can be evaluated:
ΔV = 0.30 A × 90 mΩ
where
•
ΔV = 27 mV
(2)
Therefore, the voltage drop across the device will be 27 mV.
10.2.3 Application Curve
Figure 29 shows the expected voltage drop across the device for different load currents and input voltages.
100
90
80
Voltage Drop (mV)
70
VIN = 1.1V
60
50
VIN = 1.2V
VIN = 1.8V
40
VIN = 2.5V
30
VIN = 3.6V
20
10
0
0
0.05
0.1
0.15
0.2
0.25
0.3
Load Current (A)
0.35
0.4
0.45
0.5
Figure 29. Voltage Drop vs Load Current
14
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Copyright © 2009–2015, Texas Instruments Incorporated
Product Folder Links: TPS22903 TPS22904
TPS22903, TPS22904
www.ti.com
SLVS827D – FEBRUARY 2009 – REVISED JUNE 2015
11 Power Supply Recommendations
The device is designed to operate with a VIN range of 1.1 V to 3.6 V. This supply must be well regulated and
placed as close to the device terminals as possible. It must also be able to withstand all transient and load
currents, using a recommended input capacitance of 1 μF if necessary. If the supply is more than a few inches
from the device terminals, additional bulk capacitance may be required in addition to the ceramic bypass
capacitors. If additional bulk capacitance is required, an electrolytic, tantalum, or ceramic capacitor of 10 μF may
be sufficient.
12 Layout
12.1 Layout Guidelines
For best performance, all traces should be as short as possible. To be most effective, the input and output
capacitors should be placed close to the device to minimize the effects that parasitic trace inductances may have
on normal and short-circuit operation. Using wide traces for VIN, VOUT, and GND helps minimize the parasitic
electrical effects along with minimizing the case-to-ambient thermal impedance.
12.2 Layout Example
To GPIO Control
VOUT Bypass
Capacitor
GND
ON
VOUT
VIN
VIN Bypass
Capacitor
VIA Power Ground Plane
Figure 30. Layout Example Recommendation
Copyright © 2009–2015, Texas Instruments Incorporated
Product Folder Links: TPS22903 TPS22904
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TPS22903, TPS22904
SLVS827D – FEBRUARY 2009 – REVISED JUNE 2015
www.ti.com
13 Device and Documentation Support
13.1 Related Links
The table below lists quick access links. Categories include technical documents, support and community
resources, tools and software, and quick access to sample or buy.
Table 3. Related Links
PARTS
PRODUCT FOLDER
SAMPLE & BUY
TECHNICAL
DOCUMENTS
TOOLS &
SOFTWARE
SUPPORT &
COMMUNITY
TPS22903
Click here
Click here
Click here
Click here
Click here
TPS22904
Click here
Click here
Click here
Click here
Click here
13.2 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
13.3 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
13.4 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
13.5 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
14 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
16
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Copyright © 2009–2015, Texas Instruments Incorporated
Product Folder Links: TPS22903 TPS22904
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
TPS22903YFPR
NRND
DSBGA
YFP
4
3000
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 85
4P
(2, N)
TPS22904YFPR
ACTIVE
DSBGA
YFP
4
3000
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 85
4R
(2, N)
TPS22904YFPT
ACTIVE
DSBGA
YFP
4
250
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 85
4R
(2, N)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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