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TPS22906
SLVS921A – MARCH 2009 – REVISED JULY 2015
TPS22906 Ultra-Small, Low-Input Voltage, Low rON Load Switch
1 Features
2 Applications
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Low-Input Voltage: 1.0 V to 3.6 V
Ultra-Low ON-State Resistance
– rON = 90 mΩ at VIN = 3.6 V
– rON = 100 mΩ at VIN = 2.5 V
– rON = 114 mΩ at VIN = 1.8 V
– rON = 172 mΩ at VIN = 1.2 V
500-mA Maximum Continuous Switch Current
Ultra-Low Quiescent Current: 82 nA at 1.8 V
Ultra-Low Shutdown Current: 44 nA at 1.8 V
Low Control Input Thresholds Enable Use of 1.2V/1.8-V/2.5-V/3.3-V Logic
Controlled Slew Rate to Avoid Inrush Current:
220 μs tr
ESD Performance Tested Per JESD 22
– 2000-V Human Body Model
(A114-B, Class II)
– 1000-V Charged-Device Model (C101)
Four-Terminal Wafer-Chip-Scale Package
(WCSP)
– 0.9 mm × 0.9 mm,
0.5-mm Pitch, 0.5-mm Height
Personal Digital Assistants (PDAs)
Cellular Phones
GPS Devices
MP3 Players
Digital Cameras
Peripheral Ports
Portable Instrumentation
RF Modules
3 Description
TPS22906 device is an ultra-small, low ON-state
resistance (rON) load switch with controlled turn on.
The device contains a P-channel MOSFET that
operates over an input voltage range of 1.0 V to 3.6
V. The switch is controlled by an on/off input (ON),
which is capable of interfacing directly with lowvoltage control signals. A 120-Ω on-chip load resistor
is added for output quick discharge when the switch
is turned off. TPS22906 is available in a space-saving
4-terminal WCSP with 0.5-mm pitch (YZV). The
device is characterized for operation over the free-air
temperature range of –40°C to 85°C.
Device Information(1)
PART NUMBER
TPS22906
PACKAGE
BODY SIZE (NOM)
DSBGA (4)
0.90 mm × 0.90 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Typical Application Schematic
VBATT
VIN
SMPS
ON
(see Note A)
CIN = 1 µF
CL
VOUT
LOAD
TPS22906
CL
RL
OFF
GND
GND
GND
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TPS22906
SLVS921A – MARCH 2009 – REVISED JULY 2015
www.ti.com
Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Device Options.......................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
3
3
7.1
7.2
7.3
7.4
7.5
7.6
7.7
7.8
7.9
7.10
7.11
7.12
3
4
4
4
4
5
5
6
6
6
7
8
Absolute Maximum Ratings ......................................
ESD Ratings ............................................................
Recommended Operating Conditions.......................
Thermal Information .................................................
Electrical Characteristics...........................................
Switching Characteristics – VIN = 1.1 V ....................
Switching Characteristics – VIN = 1.2 V ....................
Switching Characteristics – VIN = 1.8 V ....................
Switching Characteristics – VIN = 2.5 V ....................
Switching Characteristics – VIN = 3 V .....................
Switching Characteristics – VIN = 3.6 V ..................
Typical Characteristics ............................................
8
9
Parameter Measurement Information ................ 13
Detailed Description ............................................ 14
9.1
9.2
9.3
9.4
Overview .................................................................
Functional Block Diagram .......................................
Feature Description.................................................
Device Functional Modes........................................
14
14
14
14
10 Application and Implementation........................ 15
10.1 Application Information.......................................... 15
10.2 Typical Application ............................................... 15
11 Power Supply Recommendations ..................... 17
12 Layout................................................................... 17
12.1 Layout Guidelines ................................................. 17
12.2 Layout Example .................................................... 17
13 Device and Documentation Support ................. 18
13.1
13.2
13.3
13.4
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
18
18
18
18
14 Mechanical, Packaging, and Orderable
Information ........................................................... 18
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Original (March 2009) to Revision A
Page
•
Added Pin Configuration and Functions section, ESD Ratings table, Feature Description section, Device Functional
Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device
and Documentation Support section, and Mechanical, Packaging, and Orderable Information section .............................. 1
•
Deleted Ordering Information table. ...................................................................................................................................... 1
2
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SLVS921A – MARCH 2009 – REVISED JULY 2015
5 Device Options
(1)
DEVICE
rON at 1.8 V
(TYP)
SLEW RATE
(TYP at 1.8 V)
QUICK OUTPUT
DISCHARGE (1)
MAX OUTPUT
CURRENT
ENABLE
TPS22906
114 mΩ
220 µs
Yes
500 mA
Active high
This feature discharges the output of the switch to ground through a 120-Ω resistor, preventing the output from floating.
6 Pin Configuration and Functions
YZV Package
4 Pins DSBGA
Top View
B
B
A
A
2 1
Laser Marking View
1 2
Bump View
Pin Assignments
B
ON
GND
A
VIN
VOUT
2
1
Pin Functions
PIN
NAME
NO.
VOUT
A1
VIN
GND
ON
I/O
DESCRIPTION
O
Switch output
A2
I
Switch input, bypass this input with a ceramic capacitor to ground
B1
—
B2
I
Ground
Switch control input, active high
7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
VIN
Input voltage
VOUT
Output voltage
VON
Input voltage
PD
Power dissipation at TA = 25°C
IMAX
Maximum continuous switch current
TA
Operating free-air temperature range
MIN
MAX
UNIT
–0.3
4
V
VIN + 0.3
V
–0.3
–40
Maximum lead temperature (10-s soldering time), Tlead
Storage temperature, Tstg
(1)
-45
4
V
0.48
W
500
mA
85
°C
300
°C
150
°C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
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7.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
±2000
Charged-device model (CDM), per JEDEC specification JESD22C101 (2)
±1000
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
VIN
Input voltage range
VOUT
Output voltage range
VIH
High-level input voltage, ON
VIL
Low-level input voltage, ON
CIN
Input capacitor
MAX
1
0.85
UNIT
3.6
V
VIN
V
3.6
V
0.4
V
μF
1
7.4 Thermal Information
TPS2206
THERMAL METRIC (1)
YZV (DSBGA)
UNIT
4 PINS
RθJA
Junction-to-ambient thermal resistance
189.1
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
1.9
°C/W
RθJB
Junction-to-board thermal resistance
36.8
°C/W
ψJT
Junction-to-top characterization parameter
11.3
°C/W
ψJB
Junction-to-board characterization parameter
36.8
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
—
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
7.5 Electrical Characteristics
VIN = 1.0 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
IIN
Quiescent current
IIN(OFF)
OFF-state supply current
IIN(LEAKAGE)
4
OFF-state switch current
TEST CONDITIONS
IOUT = 0, VIN = VON
VON = GND, OUT = Open
VON = GND, VOUT = 0
TA
MIN
TYP
MAX
VIN = 1.1 V
Full
37
120
VIN = 1.8 V
Full
82
235
VIN = 3.6 V
Full
204
880
VIN = 1.1 V
Full
22
210
VIN = 1.8 V
Full
44
260
VIN = 3.6 V
Full
137
700
VIN = 1.1 V
Full
22
140
VIN = 1.8 V
Full
45
230
VIN = 3.6 V
Full
137
610
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UNIT
nA
nA
nA
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Electrical Characteristics (continued)
VIN = 1.0 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
VIN = 3.6 V
VIN = 2.5 V
rON
ON-state resistance
IOUT = - 200 mA
VIN = 1.8 V
VIN = 1.2 V
VIN = 1.1 V
rPD
Output pulldown resistance
VIN = 3.3 V, VON = 0, IOUT = 30 mA
ION
ON input leakage current
VON = 1.1 V to 3.6 V or GND
TA
MIN
25°C
TYP
MAX
90
108
Full
UNIT
125
25°C
100
Full
120
140
25°C
114
Full
138
mΩ
160
25°C
172
Full
210
235
25°C
204
Full
330
330
25°C
88
Full
120
Ω
25
nA
7.6 Switching Characteristics – VIN = 1.1 V
TA = 25°C , RL_CHIP = 120 Ω (unless otherwise noted)
PARAMETER
tON
tOFF
tr
tf
Turnon time
Turnoff time
VOUT rise time
VOUT fall time
TEST CONDITIONS
RL = 500 Ω
RL = 500 Ω
MIN
CL = 0.1 μF
531
CL = 1 μF
596
CL = 3.3 μF
659
CL = 0.1 μF
11
CL = 1 μF
RL = 500 Ω
RL = 500 Ω
TYP
MAX
UNIT
μs
μs
67
CL = 3.3 μF
225
CL = 0.1 μF
365
CL = 1 μF
367
CL = 3.3 μF
395
CL = 0.1 μF
21
CL = 1 μF
189
CL = 3.3 μF
565
μs
μs
7.7 Switching Characteristics – VIN = 1.2 V
TA = 25°C , RL_CHIP = 120 Ω (unless otherwise noted)
PARAMETER
tON
tOFF
tr
Turnon time
Turnoff time
VOUT rise time
TEST CONDITIONS
RL = 500 Ω
RL = 500 Ω
RL = 500 Ω
VOUT fall time
RL = 500 Ω
TYP
471
CL = 1 μF
527
CL = 3.3 μF
587
CL = 0.1 μF
10
CL = 1 μF
MAX
UNIT
61
CL = 3.3 μF
199
CL = 0.1 μF
324
CL = 1 μF
325
CL = 3.3 μF
350
CL = 0.1 μF
tf
MIN
CL = 0.1 μF
175
CL = 3.3 μF
523
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μs
μs
20
CL = 1 μF
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μs
μs
5
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7.8 Switching Characteristics – VIN = 1.8 V
TA = 25°C , RL_CHIP = 120 Ω (unless otherwise noted)
PARAMETER
tON
tOFF
tr
tf
Turnon time
Turnoff time
VOUT rise time
VOUT fall time
TEST CONDITIONS
RL = 500 Ω
RL = 500 Ω
MIN
CL = 0.1 μF
302
CL = 1 μF
335
CL = 3.3 μF
367
CL = 0.1 μF
8
CL = 1 μF
RL = 500 Ω
RL = 500 Ω
TYP
MAX
μs
μs
49
CL = 3.3 μF
167
CL = 0.1 μF
220
CL = 1 μF
220
CL = 3.3 μF
235
CL = 0.1 μF
15
CL = 1 μF
159
CL = 3.3 μF
481
UNIT
μs
μs
7.9 Switching Characteristics – VIN = 2.5 V
TA = 25°C , RL_CHIP = 120 Ω (unless otherwise noted)
PARAMETER
tON
Turnon time
TEST CONDITIONS
RL = 500 Ω
MIN
223
CL = 1 μF
246
CL = 3.3 μF
268
CL = 0.1 μF
tOFF
tr
Turnoff time
VOUT rise time
RL = 500 Ω
VOUT fall time
RL = 500 Ω
UNIT
μs
μs
47
CL = 3.3 μF
158
CL = 0.1 μF
175
CL = 1 μF
175
CL = 3.3 μF
187
CL = 0.1 μF
tf
MAX
7
CL = 1 μF
RL = 500 Ω
TYP
CL = 0.1 μF
μs
18
CL = 1 μF
185
CL = 3.3 μF
471
μs
7.10 Switching Characteristics – VIN = 3 V
TA = 25°C , RL_CHIP = 120 Ω (unless otherwise noted)
PARAMETER
tON
Turnon time
TEST CONDITIONS
RL = 500 Ω
tr
Turnoff time
VOUT rise time
RL = 500 Ω
RL = 500 Ω
CL = 1 μF
211
CL = 3.3 μF
231
CL = 1 μF
6
VOUT fall time
RL = 500 Ω
156
CL = 0.1 μF
159
CL = 1 μF
160
CL = 3.3 μF
170
UNIT
μs
μs
μs
17
CL = 1 μF
160
CL = 3.3 μF
473
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MAX
7
46
CL = 3.3 μF
CL = 0.1 μF
tf
TYP
191
CL = 0.1 μF
tOFF
MIN
CL = 0.1 μF
μs
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7.11 Switching Characteristics – VIN = 3.6 V
TA = 25°C , RL_CHIP = 120 Ω (unless otherwise noted)
PARAMETER
tON
tOFF
tr
tf
Turnon time
Turnoff time
VOUT rise time
VOUT fall time
TEST CONDITIONS
RL = 500 Ω
RL = 500 Ω
RL = 500 Ω
RL = 500 Ω
MIN
TYP
CL = 0.1 μF
166
CL = 1 μF
183
CL = 3.3 μF
201
CL = 0.1 μF
7
CL = 1 μF
MAX
UNIT
45
CL = 3.3 μF
155
CL = 0.1 μF
146
CL = 1 μF
146
CL = 3.3 μF
156
CL = 0.1 μF
17
CL = 1 μF
161
CL = 3.3 μF
475
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μs
μs
μs
μs
7
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7.12 Typical Characteristics
100
95
W
ON-State Resistance, rON (mΩ)
90
85
80
75
70
65
60
–40
Input Voltage, VIN (V)
90
180
80
160
Quiescent Current, IIN (nA)
200
Voltage Drop (mV)
70
VIN = 1.1V
60
VIN = 1.2V
50
VIN = 1.8V
40
VIN = 2.5V
140
120
100
80
60
VIN = 3.6V
20
40
10
20
0
0.5
0
0
0.05
85
Figure 2. rON vs Temperature (VIN = 3.3 V)
100
30
25
Temperature(°C)
Figure 1. rON vs VIN
0.1
0.15
0.2
0.25
0.3
Load Current (A)
0.35
0.4
0.45
0.5
Figure 3. Voltage Drop vs Load Current
1.0
1.5
2.0
2.5
3.0
Input Voltage, VIN(V)
3.5
4.0
Figure 4. Quiescent Current vs VIN (VON = VIN, IOUT = 0)
120
250
200
IIN(OFF) Current (nA)
Quiescent Current, IIN (nA)
100
150
100
80
60
40
50
20
0
–40
25
Temperature(°C)
85
0
0.5
Figure 5. Quiescent Current vs Temperature
(VIN = 3.3 V, IOUT = 0)
8
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1.0
1.5
2.0
2.5
Input Voltage, VIN(V)
3.0
3.5
4.0
Figure 6. IIN(OFF) vs VIN (VON = 0 V)
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Typical Characteristics (continued)
250
120
225
100
200
IIN (Leakage) Current (nA)
IIN(OFF) Current (nA)
175
150
125
100
75
80
60
40
50
20
25
0
–40
25
Temperature(°C)
0
0.5
85
1.5
2.0
3.0
3.5
4.0
Figure 8. IIN(Leakage) vs VIN (IOUT = 0)
250
4.0
225
3.5
VIN = 3.6 V
VIN = 3.3 V
200
3.0
VIN = 3 V
175
VIN = 2.5 V
2.5
VOUT (V)
150
125
100
2.0
VIN = 1.8 V
VIN = 1.5 V
1.5
VIN = 1.2 V
1.0
75
VIN = 1.1 V
50
0.5
25
0.0
0
–40
25
–0.5
85
0.3
0.4
0.5
0.6
Input Voltage, VON (V)
Temperature (°C)
Figure 9. IIN (Leakage) vs Temperature (VIN = 3.3 V)
160
150
140
130
trise
120
100
90
tON/tOFF (µs)
VIN = 3.3 V
CL = 0.1 µF
RL = 500 Ω
110
80
70
60
50
40
tfall
30
20
10
0
–50
–35
–20
–5
10
25
40
Temperature (°C)
55
70
85
100
0.7
0.8
Figure 10. ON-Input Threshold
170
trise/tfall (µs)
2.5
Input Voltage, VIN (V)
Figure 7. IIN(OFF) vs Temperature (VIN = 3.3 V)
IIN (Leakage) Current (nA)
1.0
200
190
180
170
160
150
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
–50
Figure 11. trise/tfall vs Temperature
tON
VIN = 3.3 V
CL = 0.1 µF
RL = 500 Ω
tOFF
–35
–20
–5
10
25
40
Temperature (°C)
55
70
85
100
Figure 12. tON/tOFF vs Temperature
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Typical Characteristics (continued)
1.0
VON
0.9
0.01
0.7
IOUT
0.6
0.05
0.5
0.4
0.3
0.2
Output Current (A)
Control Input Voltage (V)
0.8
0.1
0.00
0.0
–0.1
–0.2
3.2
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
–0.2
CL = 0.1 µF
RL = 11 Ω
VIN = 3.3 V
IOUT
0.32
0.30
0.28
0.26
0.24
0.22
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
–0.02
Output Current (A)
CL = 0.1 µF
RL = 500 Ω
VIN = 3.3 V
1.1
Control Input Voltage (V)
0.35
3.5
1.2
VON
–0.3
–0.4
–500
–200
0.0
200
400
600
800
1000
1200
–0.05
–0.5
0.00
1500
–1000
–500
0.0
Time (µs)
1000
Time (µs)
1500
2000
2500
3000
Figure 14. tON Response
Figure 13. tON Response
0.35
3.5
CL = 3 µF
RL = 500 Ω
VIN = 3.3 V
1.1
1.0
VON
0.9
0.01
0.7
IOUT
0.6
0.05
0.5
0.4
0.3
0.2
Output Current (A)
Control Input Voltage (V)
0.8
0.1
0.00
0.0
–0.1
–0.2
3.2
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
–0.2
CL = 3 µF
RL = 11 Ω
VIN = 3.3 V
IOUT
0.32
0.30
0.28
0.26
0.24
0.22
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
–0.02
Output Current (A)
1.2
Control Input Voltage (V)
500
VON
–0.3
–0.00
–500
0.0
500
1000
Time (µs)
1500
2000
2500
–0.05
–0.5
–1000
3000
–500
0.0
1.2
1500
2000
2500
1.0
VON
0.9
0.01
0.7
0.6
0.05
0.5
0.4
IOUT
0.2
0.1
Output Current (A)
Control Input Voltage (V)
0.8
0.3
0.00
0.0
–0.1
–0.2
–0.3
–0.4
–5000
–0.00
–200
0.0
200
400
600
Time (µs)
800
1000
3000
0.35
3.5
CL = 0.1 µF
RL = 500 Ω
VIN = 1.2 V
1.1
Control Input Voltage (V)
1000
Time (µs)
Figure 16. tON Response
Figure 15. tON Response
1200
1500
CL = 0.1 µF
RL = 11 Ω
VIN = 1.2 V
3.2
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
–0.2
–0.5
–1000
IOUT
VON
0.32
0.30
0.28
0.26
0.24
0.22
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
–0.02
–0.05
–500
Figure 17. tON Response
10
500
Output Current (A)
–0.4
–1000
0.0
500
1000
Time (µs)
1500
2000
2500
3000
Figure 18. tON Response
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Typical Characteristics (continued)
1.0
VON
0.9
0.01
0.6
0.05
0.5
0.4
0.3
IOUT
0.2
Output Current (A)
Control Input Voltage (V)
0.8
0.7
0.1
0.00
0.0
–0.1
–0.2
CL = 3 µF
RL = 11 Ω
VIN = 1.2 V
3.2
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
–0.2
0.32
0.30
0.28
0.26
0.24
0.22
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
–0.02
Output Current (A)
CL = 3 µF
RL = 500 Ω
VIN = 1.2 V
1.1
Control Input Voltage (V)
0.35
3.5
1.2
IOUT
VON
–0.3
–500
0.0
500
1000
Time (µs)
1500
2000
2500
–0.00
3000
–0.05
–0.5
–1000
–500
0.0
CL = 0.1 µF
RL = 500 Ω
VIN = 3.3 V
0.11
0.10
VON
0.01
0.07
IOUT
0.05
0.05
0.04
0.03
0.02
Output Current (A)
Control Input Voltage (V)
0.08
Control Input Voltage (V)
1500
2000
2500
3000
0.35
3.5
0.12
0.06
1000
Time (µs)
Figure 20. tON Response
Figure 19. tON Response
0.09
500
0.01
0.00
0.00
–0.01
–0.02
CL = 0.1 µF
RL = 11 Ω
VIN = 3.3 V
IOUT
3.2
3.0
2.8
2.6
2.4
2.2
2.2
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
–0.2
0.32
0.30
0.28
0.26
0.24
0.22
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
–0.02
Output Current (A)
–0.4
–1000
VON
–0.03
–0.04
–5000
–0.00
–200
0.0
200
400
600
Time (µs)
800
1000
1200
–0.05
–0.5
–250
1500
–100
0.0
500
600
750
0.35
1.0
VON
0.01
0.7
IOUT
0.05
0.5
0.4
0.3
0.2
Output Current (A)
Control Input Voltage (V)
0.8
0.1
0.00
0.0
–0.1
–0.2
3.2
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.1
0.8
0.6
0.4
0.2
0.0
–0.2
CL = 3 µF
RL = 11 Ω
VIN = 3.3 V
IOUT
0.32
0.30
0.28
0.26
0.24
0.22
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
–0.02
Output Current (A)
CL = 3 µF
RL = 500 Ω
VIN = 3.3 V
1.1
Control Input Voltage (V)
400
3.5
1.2
0.6
200
300
Time (µs)
Figure 22. tOFF Response
Figure 21. tOFF Response
0.9
100
VON
–0.3
–0.4
–5000
–0.00
–200
0.0
200
400
600
Time (µs)
800
1000
1200
1500
–0.05
–0.5
–250
–100
0.0
100
200
300
Time (µs)
400
500
600
750
Figure 24. tOFF Response
Figure 23. tOFF Response
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Typical Characteristics (continued)
1.0
VON
0.9
0.01
0.6
0.05
0.5
0.4
0.3
0.2
IOUT
Output Current (A)
Control Input Voltage (V)
0.8
0.7
0.1
0.00
0.0
–0.1
–0.2
3.2
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
–0.2
CL = 0.1 µF
RL = 11 Ω
VIN = 1.2 V
0.32
0.30
0.28
0.26
0.24
0.22
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
–0.02
Output Current (A)
CL = 0.1 µF
RL = 500 Ω
VIN = 1.2 V
1.1
Control Input Voltage (V)
0.35
3.5
1.2
IOUT
VON
–0.3
–0.4
–50
–0.00
–20
0.0
20
40
60
Time (µs)
80
100
120
–0.05
–0.5
–250
150
–100
0.0
500
600
750
0.35
VON
0.01
0.7
0.6
0.05
0.5
0.4
0.3
IOUT
Output Current (A)
Control Input Voltage (V)
0.8
0.1
0.00
0.0
–0.1
–0.2
CL = 3 µF
RL = 11 Ω
VIN = 1.2 V
3.2
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
–0.2
0.32
0.30
0.28
0.26
0.24
0.22
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
–0.02
Output Current (A)
CL = 3 µF
RL = 500 Ω
VIN = 1.2 V
1.0
Control Input Voltage (V)
400
3.5
1.2
1.1
0.2
200
300
Time (µs)
Figure 26. tOFF Response
Figure 25. tOFF Response
0.9
100
IOUT
VON
–0.3
–0.4
–1000
–0.00
–500
0.0
500
1000
Time (µs)
1500
2000
2500
3000
–0.05
–0.5
–250
–100
100
200
300
Time (µs)
400
500
600
750
Figure 28. tOFF Response
Figure 27. tOFF Response
12
0.0
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8 Parameter Measurement Information
VIN
ON
VOUT
(A)
RL
CL
+
–
TPS22906
OFF
CIN =1 µF
GND
GND
GND
TEST CIRCUIT
1.8 V
VON
VON
VON/2
VON/2
tr
0V
tON
tOFF
VOUT/2
VOUT/2
90%
VOUT
VOH
VOUT
tf
0V
10%
90%
10%
VOL
tON/tOFF WAVEFORMS
A.
trise and tfall of the control signal is 100 ns.
Figure 29. Test Circuit and tON/tOFF Waveforms
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9 Detailed Description
9.1 Overview
TPS22906 is a low ON-state resistance (rON) load switch with controlled turnon. The device contains a P-channel
MOSFET that operates over an input voltage range of 1.0 V to 3.6 V. The switch is controlled by an on/off input
(ON), which is capable of interfacing directly with low-voltage control signals. A 120-Ω on-chip load resistor is
added for output quick discharge when the switch is turned off.
9.2 Functional Block Diagram
VIN
A2
Turn-On Slew Rate
Controlled Driver
ON
B2
Control
Logic
ESD Protection
A1
VOUT
Output Discharge
B1
GND
9.3 Feature Description
9.3.1 ON/OFF Control
The ON pin controls the state of the switch. Activating ON continuously holds the switch in the on state so long
as there is no fault. ON is active HI and has a low threshold making it capable of interfacing with low-voltage
signals. The ON pin is compatible with standard GPIO logic threshold. It can be used with any microcontroller
with 1.2-V, 1.8-V, 2.5-V, or 3.3-V GPIOs.
9.4 Device Functional Modes
Table 1 lists the functional modes of the TPS22906.
Table 1. Function Table
14
ON (CONTROL INPUT)
VIN TO VOUT
L
OFF
ON
H
ON
OFF
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VOUT TO GND
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10 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
10.1 Application Information
10.1.1 Input Capacitor
To limit the voltage drop on the input supply caused by transient in-rush currents when the switch turns on into a
discharged load capacitor or short-circuit, a capacitor needs to be placed between VIN and GND. A 1-μF ceramic
capacitor, CIN, place close to the pins is usually sufficient. Higher values of CIN can be use to further reduce the
voltage drop during high current application. When switching heavy loads, it is recommended to have an input
capacitor approximately 10 times higher than the output capacitor to avoid excessive voltage drop.
10.1.2 Output Capacitor
Due to the integral body diode in the PMOS switch, a CIN greater than CL is highly recommended. A CL greater
than CIN can cause VOUT to exceed VIN when the system supply is removed. This could result in current flow
through the body diode from VOUT to VIN.
10.2 Typical Application
VBATT
VIN
SMPS
ON
(see Note A)
CIN = 1 µF
CL
LOAD
VOUT
TPS22906
CL
RL
OFF
GND
GND
GND
A.
Switched mode power supply
Figure 30. Powering a Downstream Module
10.2.1 Design Requirements
Table 2 lists the design parameters for the TPS22906 device.
Table 2. Design Parameters
DESIGN PARAMETER
EXAMPLE VALUE
VIN
1.8 V
Load Current
0.3 A
Ambient Temperature
25°C
10.2.2 Detailed Design Procedure
10.2.2.1 VIN to VOUT Voltage Drop
The voltage drop from VIN to VOUT is determined by the ON-resistance of the device and the load current. The
rON can be found in Electrical Characteristics and is dependent on temperature. When the value of rON is found,
Equation 1 can be used to calculate the voltage drop across the device:
ΔV = ILOAD × rON
where
•
•
ΔV = Voltage drop across the device
ILOAD = Load current
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•
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rON = ON-resistance of the device
(1)
At VIN = 1.8 V, the TPS22906 has a rON value of 114 mΩ. Using this value and the defined load current, the
above equation can be evaluated:
ΔV = 0.30 A × 114 mΩ
where
•
ΔV = 34 mV
(2)
Therefore, the voltage drop across the device will be 34 mV.
10.2.3 Application Curve
100
90
80
Voltage Drop (mV)
70
VIN = 1.1V
60
VIN = 1.2V
50
VIN = 1.8V
40
VIN = 2.5V
30
VIN = 3.6V
20
10
0
0
0.05
0.1
0.15
0.2
0.25
0.3
Load Current (A)
0.35
0.4
0.45
0.5
Figure 31. Voltage Drop Vs Load Current
16
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11 Power Supply Recommendations
The device is designed to operate with a VIN range of 1.1 V to 3.6 V. This supply must be well regulated and
placed as close to the device terminals as possible. It must also be able to withstand all transient and load
currents, using a recommended input capacitance of 1 μF if necessary. If the supply is more than a few inches
from the device terminals, additional bulk capacitance may be required in addition to the ceramic bypass
capacitors. If additional bulk capacitance is required, an electrolytic, tantalum, or ceramic capacitor of 10 μF may
be sufficient.
12 Layout
12.1 Layout Guidelines
For best performance, all traces should be as short as possible. To be most effective, the input and output
capacitors should be placed close to the device to minimize the effects that parasitic trace inductances may have
on normal and short circuit operation. Using wide traces for VIN, VOUT, and GND helps minimize the parasitic
electrical effects along with minimizing the case to ambient thermal impedance.
12.2 Layout Example
To GPIO control
ON
GND
VIN
VOUT
VOUT Bypass
Capacitor
VIN Bypass
Capacitor
VIA to Power Ground Plane
Figure 32. Recommended Board Layout
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13 Device and Documentation Support
13.1 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
13.2 Trademarks
E2E is a trademark of Texas Instruments.
13.3 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
13.4 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
14 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
18
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PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
TPS22906YZVR
NRND
DSBGA
YZV
4
3000
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 85
5D
(3, 5)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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