TPS22907YZTT

Sample & Buy Product Folder Support & Community Tools & Software Technical Documents TPS22907 SLVSA44B – NOVEMBER 2009 – REVISED FEBRUARY 2015 TPS22907 3.6-V, 1-A, 44-mΩ ON-Resistance Load Switch With Controlled Turnon 1 Features 2 Applications • • • • • • • • • • • • 1 • • • • • • • Integrated P-Channel Load Switch Low Input Voltage: 1.1 V to 3.6 V ON-Resistance (Typical Values): – RON = 44 mΩ at VIN = 3.6 V – RON = 50 mΩ at VIN = 2.5 V – RON = 58 mΩ at VIN = 1.8 V – RON = 83 mΩ at VIN = 1.2 V 1-A Maximum Continuous Switch Current Maximum Quiescent Current (IQ) < 1 µA Maximum Shutdown Current (ISD) < 1 µA Low Control Input Thresholds Enable Use of 1.2V, 1.8-V, 2.5-V, and 3.3-V Logic Controlled Slew-Rate to Avoid Inrush Currents – tR = 25 µs at VIN = 3.6 V – tR = 36 µs at VIN = 1.8 V ESD Performance Tested Per JESD 22 – 3000-V Human Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) Ultra-Small 4-Terminal Wafer-Chip-Scale Package (WCSP) – Nominal Dimensions Shown – See Addendum for Details – 0.9 mm × 0.9 mm, 0.5-mm Pitch, 0.5-mm Height (YZT) Battery-Powered Equipment Portable Industrial Equipment Portable Medical Equipment Portable Media Players Point-of-Sale Terminal GPS Devices Digital Cameras Portable Instrumentation Smart Phones and Tablets 3 Description The TPS22907 is a small, low RON load switch with controlled turnon. The device contains a P-channel MOSFET that operates over an input voltage range of 1.1 V to 3.6 V. The switch is controlled by an on and off input (ON), which can interface directly with lowvoltage control signals. The TPS22907 is available in a space-saving 4terminal WCSP with 0.5-mm pitch (YZT). The device is characterized for operation over the free-air temperature range of –40°C to 85°C. Device Information(1) PART NUMBER TPS22907 PACKAGE DSBGA (4) BODY SIZE (NOM) 0.90 mm × 0.90 mm (1) For all available packages, see the orderable addendum at the end of the data sheet. Typical Application Power Supply VIN ON CIN VOUT ON CL RL OFF TPS22907 GND GND 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. TPS22907 SLVSA44B – NOVEMBER 2009 – REVISED FEBRUARY 2015 www.ti.com Table of Contents 1 2 3 4 5 6 7 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Pin Configuration and Functions ......................... Specifications......................................................... 1 1 1 2 3 3 6.1 6.2 6.3 6.4 6.5 6.6 6.7 6.8 6.9 6.10 3 3 4 4 4 5 5 5 6 8 Absolute Maximum Ratings ...................................... ESD Ratings.............................................................. Recommended Operating Conditions....................... Thermal Information .................................................. Electrical Characteristics........................................... Switching Characteristics: VIN = 3.6 V ...................... Switching Characteristics: VIN = 1.8 V ...................... Switching Characteristics: VIN = 1.1 V ...................... Typical DC Characteristics........................................ Typical AC Characteristics...................................... Parameter Measurement Information ................ 10 8 Detailed Description ............................................ 11 8.1 8.2 8.3 8.4 9 Overview ................................................................. Functional Block Diagram ....................................... Feature Description................................................. Device Functional Modes........................................ 11 11 11 11 Application and Implementation ........................ 12 9.1 Application Information............................................ 12 9.2 Typical Application ................................................. 12 10 Power Supply Recommendations ..................... 14 11 Layout................................................................... 14 11.1 Layout Guidelines ................................................. 14 11.2 Layout Example .................................................... 14 12 Device and Documentation Support ................. 15 12.1 Trademarks ........................................................... 15 12.2 Electrostatic Discharge Caution ............................ 15 12.3 Glossary ................................................................ 15 13 Mechanical, Packaging, and Orderable Information ........................................................... 15 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision A (September 2013) to Revision B • Page Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section ................................................................................................. 3 Changes from Original (November 2009) to Revision A Page • Changed Feature from: Ultra-Low ON-State Resistance to: Ultra-Low ON-State Resistance (RON) ..................................... 1 • Changed the Feature for the Wafer-Chip-Scale Package...................................................................................................... 1 • Changed Application from: Point Of Sales Terminal to: Point of Sale Terminal .................................................................... 1 • Changed Application from: Smartphones to: Smartphones / Tablets .................................................................................... 1 • Deleted the Ordering Information table .................................................................................................................................. 1 • Changed the IIN Test Condition from: IOUT = 0 to IOUT = 0 mA................................................................................................ 4 • Changed the IIN(OFF) Test Condition from: VON = GND to VON = 0 V ...................................................................................... 4 • Changed the IIN(LEAKAGE) Test Condition from: VON = GND, VOUT = 0 to VON = 0 V, VOUT = 0 V ............................................. 4 • Changed Table 1, Device Feature List................................................................................................................................. 11 2 Submit Documentation Feedback Copyright © 2009–2015, Texas Instruments Incorporated Product Folder Links: TPS22907 TPS22907 www.ti.com SLVSA44B – NOVEMBER 2009 – REVISED FEBRUARY 2015 5 Pin Configuration and Functions YZT Package 4-Pin DSBGA (Laser Marking View) YZT Package 4-Pin DSBGA (Bump View) B B A A 2 1 1 2 Pin Functions PIN NO. NAME A1 VOUT I/O DESCRIPTION O Switch output Switch input, bypass capacitor recommended for minimizing VIN dip. See Feature Description. A2 VIN I B1 GND -— B2 ON I Ground Switch control input, active high. Do not leave floating. 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN MAX UNIT VIN Input voltage –0.3 4 V VOUT Output voltage –0.3 (VIN + 0.3) V VON Input voltage –0.3 4 V IMAX Maximum continuous switch current 1 A IPLS Maximum pulsed current (100-µs pulse, 2% duty cycle), TA = –40°C to +85°C 2.7 A TJ Maximum junction temperature 125 °C TLEAD Maximum lead temperature (10-s soldering time) 300 °C Tstg Storage temperature 150 °C (1) –65 Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 6.2 ESD Ratings VALUE Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins V(ESD) (1) (2) Electrostatic discharge (1) Charged-device model (CDM), per JEDEC specification JESD22-C101, all pins (2) UNIT ±3000 ±1000 V JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Submit Documentation Feedback Copyright © 2009–2015, Texas Instruments Incorporated Product Folder Links: TPS22907 3 TPS22907 SLVSA44B – NOVEMBER 2009 – REVISED FEBRUARY 2015 www.ti.com 6.3 Recommended Operating Conditions MIN MAX 1.1 3.6 V VIN V 3.6 V VIN Input voltage range VOUT Output voltage range VIH High-level input voltage, ON VIL Low-level input voltage, ON CIN Input capacitor 1 (1) TA Operating free-air temperature –40 (1) 0.85 UNIT 0.4 V μF 85 °C See Application Information. 6.4 Thermal Information TPS22907 THERMAL METRIC (1) (2) YZT (DSBGA) UNIT 4 PINS RθJA Junction-to-ambient thermal resistance RθJC(top) Junction-to-case(top) thermal resistance 1.9 RθJB Junction-to-board thermal resistance 37.2 ΨJT Junction-to-top characterization parameter 10.2 ΨJB Junction-to-board characterization parameter 37 RθJC(bot) Junction-to-case(bottom) thermal resistance — (1) (2) 189.4 °C/W For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953 For thermal estimates of this device based on PCB copper area, see the TI PCB Thermal Calculator. 6.5 Electrical Characteristics Unless otherwise noted, the specification applies over the operating ambient temperature -40°C ≤ TA ≤ 85°C and VIN = 1.1 V to 3.6 V. Typical values are for VIN = 3.6 V and TA = 25°C. TYP MAX IQ Quiescent current PARAMETER IOUT = 0 mA, VIN = VON TEST CONDITIONS Full 0.07 1 µA ISD Off supply current VON = 0 V, OUT = Open Full 0.05 1 µA IIN(LEAKAGE) Leakage current VON = 0 V, VOUT = 0 V Full 0.05 1 µA 25°C 44 60 VIN = 3.6 V, IOUT = –200 mA VIN = 2.5 V, IOUT = –200 mA RON ON-state resistance VIN = 1.8 V, IOUT = –200 mA VIN = 1.2 V, IOUT = –200 mA VIN = 1.1 V, IOUT = –200 mA ION 4 ON input leakage current VON = 0 V to 3.6 V Submit Documentation Feedback TA MIN Full 25°C 67 50 Full 25°C 83 mΩ 106 117 97 Full Full 72 80 Full 25°C 63 70 58 Full 25°C UNIT 125 140 0.005 1 µA Copyright © 2009–2015, Texas Instruments Incorporated Product Folder Links: TPS22907 TPS22907 www.ti.com SLVSA44B – NOVEMBER 2009 – REVISED FEBRUARY 2015 6.6 Switching Characteristics: VIN = 3.6 V TA = 25°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT tON Turn-ON time RL = 500 Ω, CL = 0.1 μF 28 μs tOFF Turn-OFF time RL = 500 Ω, CL = 0.1 μF 40 μs tr VOUT rise time RL = 500 Ω, CL = 0.1 μF 25 μs tf VOUT fall time RL = 500 Ω, CL = 0.1 μF 116 μs 6.7 Switching Characteristics: VIN = 1.8 V TA = 25°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT tON Turn-ON time RL = 500 Ω, CL = 0.1 μF 48 μs tOFF Turn-OFF time RL = 500 Ω, CL = 0.1 μF 40 μs tr VOUT rise time RL = 500 Ω, CL = 0.1 μF 36 μs tf VOUT fall time RL = 500 Ω, CL = 0.1 μF 113 μs 6.8 Switching Characteristics: VIN = 1.1 V TA = 25°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT tON Turn-ON time RL = 500 Ω, CL = 0.1 μF 81 μs tOFF Turn-OFF time RL = 500 Ω, CL = 0.1 μF 42 μs tr VOUT rise time RL = 500 Ω, CL = 0.1 μF 57 μs tf VOUT fall time RL = 500 Ω, CL = 0.1 μF 113 μs Submit Documentation Feedback Copyright © 2009–2015, Texas Instruments Incorporated Product Folder Links: TPS22907 5 TPS22907 SLVSA44B – NOVEMBER 2009 – REVISED FEBRUARY 2015 www.ti.com 6.9 Typical DC Characteristics 0.14 0.06 V IN = 3.6 V IOUT = 200 m A IOUT = -200 m A 0.05 r ON - ON-State Resistance - W ð W r ON - ON-State Resistance - W 0.12 0.1 0.08 TA = 85°C 0.06 0.04 TA = 25°C TA = -40°C 0.04 0.03 0.02 0.01 0.02 0 1 1.5 2 2.5 3 3.5 0 -40 4 -15 V IN - Input Voltage - V Figure 1. ON-State Resistance vs. Input Voltage 85 V IN = 3.6 V IOUT = 0 V IN = V ON 0.25 IIN - Quiescent Current - µA 0.20 IIN - Quiescent Current - µA 60 0.30 V ON = V IN IOUT = 0 0.15 0.10 0.05 0.20 0.15 0.10 0.05 0.00 -40 0.00 1 1.5 2 2.5 3 3.5 4 -15 V IN - Input Voltage - V 10 35 60 85 TA - Tem perature - °C Figure 3. VIN Quiescent Current vs. Input Voltage Figure 4. VIN Quiescent Current vs. Temperature 0.14 0.12 V IN = 3.6 V V ON = 0 V 0.12 IIN(OFF) - Off Supply Current - µA 0.10 IIN(off) - Off Supply Current - µA 35 Figure 2. ON-State Resistance vs. Temperature 0.25 0.08 0.06 0.04 0.02 0.10 0.08 0.06 0.04 0.02 0.00 1 1.5 2 2.5 3 3.5 0.00 -40 4 -15 10 35 60 85 TA - Tem perature - °C V IN - Input Voltage - V Figure 5. VIN Off Supply Current vs. Input Voltage 6 10 TA - Tem perature - °C Figure 6. VIN OFF Supply Current vs. Temperature Submit Documentation Feedback Copyright © 2009–2015, Texas Instruments Incorporated Product Folder Links: TPS22907 TPS22907 www.ti.com SLVSA44B – NOVEMBER 2009 – REVISED FEBRUARY 2015 Typical DC Characteristics (continued) 0.50 0.18 IOUT = 0 V ON = 0 V IN = 3.6 V IOUT = 0 V ON = 0 0.45 0.40 0.14 IIN(leakage) - Leakage Current - µA IIN(leakage) - Leakage Current - µA 0.16 0.12 0.10 0.08 0.06 0.04 0.02 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 1 1.5 2 2.5 3 3.5 0.00 -40 4 -15 10 35 60 85 TA - Tem perature - °C V IN - Input Voltage - V Figure 7. VIN Leakage Current vs. Input Voltage Figure 8. VIN Leakage Current vs. Temperature 4.0 3.5 V OUT - Output Voltage - V 3.0 TA = 85°C 2.5 TA = 25°C 2.0 TA = -40C 1.5 1.0 V IN = 3.6 V IOUT = 500 m A 0.5 0.0 0 0.5 1 1.5 2 V ON - ON Voltage - V Figure 9. ON Input Threshold Submit Documentation Feedback Copyright © 2009–2015, Texas Instruments Incorporated Product Folder Links: TPS22907 7 TPS22907 SLVSA44B – NOVEMBER 2009 – REVISED FEBRUARY 2015 www.ti.com 6.10 Typical AC Characteristics 41.0 40 V IN = 3.6 V CL = 0.1 µF RL = 500 W 40.5 30 39.5 t ON - On Time - µs t OFF - Off Time - µs 40.0 39.0 38.5 38.0 25 20 15 10 37.5 5 37.0 36.5 -40 V IN = 3.6 V CL = 0.1 µF RL = 500 W 35 -15 10 35 60 0 -40 85 -15 TA - Tem perature - °C Figure 10. OFF Time vs. Temperature 60 85 122 V IN = 3.6 V CL = 0.1 µF RL = 500 W 30.0 V IN = 3.6 V CL = 0.1 µF RL = 500 W 120 118 t f - Fall Time - µs 29.5 t r - Rise Time - µs 35 Figure 11. ON Time vs. Temperature 30.5 29.0 28.5 28.0 116 114 112 27.5 110 27.0 108 26.5 -40 10 TA - Tem perature - °C -15 10 35 60 106 -40 85 TA - Tem perature - °C -15 10 35 60 85 TA - Tem perature - °C Figure 12. Rise Time vs. Temperature Figure 13. Fall Time vs. Temperature IOUT VON VON VIN = 3.6 V CIN = 1 µF CL = 0.1 µF RL = 36 W TA = 25°C IOUT VIN = 3.6 V CIN = 1 µF CL = 0.1 µF RL = 36 W TA = 25°C Figure 14. tON Response 8 Figure 15. tOFF Response Submit Documentation Feedback Copyright © 2009–2015, Texas Instruments Incorporated Product Folder Links: TPS22907 TPS22907 www.ti.com SLVSA44B – NOVEMBER 2009 – REVISED FEBRUARY 2015 Typical AC Characteristics (continued) IOUT VON VON IOUT VIN = 1.1 V CIN = 1 µF CL = 0.1 µF RL = 11 W TA = 25°C VIN = 1.1 V CIN = 1 µF CL = 0.1 µF RL = 11 W TA = 25°C Figure 16. tON Response Figure 17. tOFF Response IOUT VON VON IOUT VIN = 3.6 V CIN = 1 µF CL = 10 µF RL = 36 W TA = 25°C Figure 18. tON Response Figure 19. tOFF Response IOUT VON VON IOUT VIN = 3.6 V CIN = 1 µF CL = 10 µF RL = 36 W TA = 25°C VIN = 1.1 V CIN = 1 µF CL = 10 µF RL = 11 W TA = 25°C VIN = 1.1 V CIN = 1 µF CL = 10 µF RL = 11 W TA = 25°C Figure 20. tON Response Figure 21. tOFF Response Submit Documentation Feedback Copyright © 2009–2015, Texas Instruments Incorporated Product Folder Links: TPS22907 9 TPS22907 SLVSA44B – NOVEMBER 2009 – REVISED FEBRUARY 2015 www.ti.com 7 Parameter Measurement Information VIN VOUT CIN = 1µF ON + - (A) CL ON RL OFF GND TPS22907 GND GND TEST CIRCUIT VON 50% 50% tOFF tON VOUT 50% 50% tf tr 90% VOUT 10% 90% 10% tON/tOFF WAVEFORMS (A) Control signal rise and fall times are 100 ns. Figure 22. Test Circuit and tON/tOFF Waveforms 10 Submit Documentation Feedback Copyright © 2009–2015, Texas Instruments Incorporated Product Folder Links: TPS22907 TPS22907 www.ti.com SLVSA44B – NOVEMBER 2009 – REVISED FEBRUARY 2015 8 Detailed Description 8.1 Overview The TPS22907 is a single-channel, 1-A load switch in a small, space-saving DSBGA-4 package. This device implements a P-channel MOSFET to provide a low ON-resistance for a low-voltage drop across the device. A controlled rise time is used in applications to limit the inrush current. 8.2 Functional Block Diagram VIN ON A2 B2 Control Logic A1 VOUT B1 GND 8.3 Feature Description Table 1. Device Feature List DEVICE RON (Typical) VIN = 1.8 V SLEW RATE (Typical) VIN = 1.8 V MAXIMUM OUTPUT CURRENT ENABLE TPS22907 58 mΩ 36 μs 1A Active high 8.3.1 On and Off Control The ON pin controls the state of the switch. Asserting ON high enables the switch. ON is active high and has a low threshold, making it capable of interfacing with low-voltage signals. The ON pin is compatible with standard GPIO logic threshold. It can be used with any microcontroller with 1.2-V, 1.8-V, 2.5-V, or 3.3-V GPIOs. 8.4 Device Functional Modes Table 2. Function Table ON (Control Input) VIN to VOUT L OFF H ON Submit Documentation Feedback Copyright © 2009–2015, Texas Instruments Incorporated Product Folder Links: TPS22907 11 TPS22907 SLVSA44B – NOVEMBER 2009 – REVISED FEBRUARY 2015 www.ti.com 9 Application and Implementation NOTE Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality. 9.1 Application Information 9.1.1 Input Capacitor To limit the voltage drop on the input supply caused by transient inrush currents when the switch turns on into a discharged load capacitor, a capacitor needs to be placed between VIN and GND. A 1-μF ceramic capacitor, CIN, place close to the pins is usually sufficient. Higher values of CIN can be use to further reduce the voltage drop during high-current application. When switching heavy loads, TI recommends having an input capacitor approximately ten times higher than the output capacitor to avoid excessive voltage drop. 9.1.2 Output Capacitor Due to the integrated body diode in the PMOS switch, a CIN greater than CL is highly recommended. A CL greater than CIN can cause VOUT to exceed VIN when the system supply is removed. This could result in current flow through the body diode from VOUT to VIN. A CIN to CL ratio of at least 10 to 1 is recommended for minimizing VIN dip caused by inrush currents during startup; however, a 10 to 1 ratio for capacitance is not required for proper functionality of the device. A ratio smaller than 10 to 1 (such as 1 to 1) could cause slightly more VIN dip at turnon due to inrush currents. 9.2 Typical Application Power Supply VOUT VIN ON CIN ON CL RL OFF GND TPS22907 GND Figure 23. Typical Application Schematic 9.2.1 Design Requirements Table 3 lists the design requirements for the device. Table 3. Design Parameters DESIGN PARAMETER 12 EXAMPLE VALUE VIN 3.6 V CL 4.7 µF Load current 1A Ambient Temperature 25 °C Maximum inrush current 750 mA Submit Documentation Feedback Copyright © 2009–2015, Texas Instruments Incorporated Product Folder Links: TPS22907 TPS22907 www.ti.com SLVSA44B – NOVEMBER 2009 – REVISED FEBRUARY 2015 9.2.2 Detailed Design Procedure 9.2.2.1 Managing Inrush Current When the switch is enabled, the output capacitors must be charged up from 0 V to the set value (3.6 V in this example). This charge arrives in the form of inrush current. Inrush current can be calculated using the following equation: dV IINRUSH = CL ´ OUT dt where: • • • CL = Output capacitance dVOUT = Output voltage dt = Rise time (1) The TPS22907 offers a controlled rise time for minimizing inrush current. This device can be selected based upon the minimum acceptable rise time which can be calculated using the design requirements and the inrush current equation. An output capacitance of 4.7 µF will be used because the amount of inrush current increases with output capacitance: 750 mA = 4.7 µF × 3.6 V / dt where • dt = 22.56 µs (2) To ensure an inrush current of less than 750 mA, a device with a rise time greater than 22.56 µs must be used. The TPS22907 has a typical rise time of 25 µs at 3.6 V which meets the above design requirements. 9.2.2.2 Voltage Drop from VIN to VOUT The voltage drop from VIN to VOUT is determined by the ON-resistance of the device and the load current. RON can be found in Electrical Characteristics and is dependent on temperature. When the value of RON is found, the following equation can be used to calculate the voltage drop across the device: ΔV = ILOAD × RON where: • • • ΔV = Voltage drop across the device ILOAD = Load current RON = ON-resistance of the device (3) At VIN = 3.6 V, the TPS22907 has an RON value of 44 mΩ. Using this value and the defined load current, the above equation can be evaluated: ΔV = 1 A × 44 mΩ ΔV = 44 mV (4) Therefore, the voltage drop across the device will be 44 mV. Submit Documentation Feedback Copyright © 2009–2015, Texas Instruments Incorporated Product Folder Links: TPS22907 13 TPS22907 SLVSA44B – NOVEMBER 2009 – REVISED FEBRUARY 2015 www.ti.com 9.2.3 Application Curve Figure 24 shows the inrush current expected for different load capacitances at varying VIN voltages. 1600 VIN = 3.6V VIN = 1.8V VIN = 1.1V 1400 Inrush Current (mA) 1200 1000 800 600 400 200 0 0 1 2 3 4 5 6 CL (PF) 7 8 9 10 A001 Figure 24. Expected Inrush Current vs Load Capacitance 10 Power Supply Recommendations The device is designed to operate with a VIN voltage range of 1.1 V to 3.6 V. The power supply should be well regulated and placed as close to the device terminals as possible. It must be able to withstand all transient and load current steps. In most situations, using the minimum recommended input capacitance of 1 uF is sufficient to prevent the supply voltage from dipping when the switch is turned on. In cases where the power supply is slow to respond to a large transient current or large load current step, additional bulk capacitance may be required on the input. 11 Layout 11.1 Layout Guidelines For best performance, VIN and VOUT traces should be as short and wide as possible to help minimize the parasitic electrical effects. To be most effective, the input and output capacitors should be placed close to the device to minimize the effects that parasitic trace inductances may have on normal operation. 11.2 Layout Example Figure 25. Example Layout for the TPS22907 14 Submit Documentation Feedback Copyright © 2009–2015, Texas Instruments Incorporated Product Folder Links: TPS22907 TPS22907 www.ti.com SLVSA44B – NOVEMBER 2009 – REVISED FEBRUARY 2015 12 Device and Documentation Support 12.1 Trademarks All trademarks are the property of their respective owners. 12.2 Electrostatic Discharge Caution These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 12.3 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. 13 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. Submit Documentation Feedback Copyright © 2009–2015, Texas Instruments Incorporated Product Folder Links: TPS22907 15 PACKAGE OPTION ADDENDUM www.ti.com 10-Dec-2020 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) TPS22907YZTR NRND DSBGA YZT 4 3000 RoHS & Green SNAGCU Level-1-260C-UNLIM -40 to 85 5K (F, G) TPS22907YZTT NRND DSBGA YZT 4 250 RoHS & Green SNAGCU Level-1-260C-UNLIM -40 to 85 5K (F, G) (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of