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TPS22919
SLVSEN5B – OCTOBER 2018 – REVISED MAY 2019
TPS22919 5.5 V, 1.5 A, 90-mΩ Self-Protected Load Switch with Controlled Rise Time
1 Features
2 Applications
•
•
•
•
•
1
•
•
•
•
•
•
•
Input operating voltage range (VIN):
1.6 V to 5.5 V
Maximum continuous current (IMAX): 1.5 A
On-Resistance (RON):
– 5-V VIN: 89 mΩ (typical)
– 3.6-V VIN: 90 mΩ (typical)
– 1.8-V VIN: 105 mΩ (typical)
Output short protection (ISC): 3 A (typical)
Low power consumption:
– ON state (IQ): 8 µA (typical)
– OFF state (ISD): 2 nA (typical)
Smart ON pin pull down (RPD):
– ON ≥ VIH (ION): 100 nA (maximum)
– ON ≤ VIL (RPD): 530 kΩ (typical)
Slow Turn ON timing to limit inrush current (tON):
– 5.0 V Turn ON time (tON):
1.95 ms at 3.2 mV/μs
– 3.6 V Turn ON time (tON):
1.75 ms at 2.7 mV/μs
– 1.8 V Turn ON time (tON):
1.5 ms at 1.8 mV/μs
Adjustable output discharge and fall time:
– Internal QOD resistance = 24 Ω (typical)
Personal electronics
Set top box
HDTV
Multi function printer
3 Description
The TPS22919 device is a small, single channel load
switch with controlled slew rate. The device contains
an N-channel MOSFET that can operate over an
input voltage range of 1.6 V to 5.5 V and can support
a maximum continuous current of 1.5 A.
The switch ON state is controlled by a digital input
that is capable of interfacing directly with low-voltage
control signals. When power is first applied, a Smart
Pull Down is used to keep the ON pin from floating
until system sequencing is complete. Once the pin is
deliberately driven High (>VIH), the Smart Pull Down
will be disconnected to prevent unnecessary power
loss.
The TPS22919 load switch is also self-protected,
meaning that it will protect itself from short circuit
events on the output of the device. It also has thermal
shutdown to prevent any damage from overheating.
TPS22919 is available in a standard SC-70 package
characterized for operation over a junction
temperature range of –40°C to 125°C.
Device Information(1)
PART NUMBER
TPS22919DCK
PACKAGE
SC-70 (6)
BODY SIZE (NOM)
2.1 mm × 2.0 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Simplified Schematic
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TPS22919
SLVSEN5B – OCTOBER 2018 – REVISED MAY 2019
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Table of Contents
1
2
3
4
5
6
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
6.1
6.2
6.3
6.4
6.5
6.6
6.7
4
4
4
4
5
5
7
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Switching Characteristics ..........................................
Typical Characteristics .............................................
7
Parameter Measurement Information ................ 11
8
Detailed Description ............................................ 12
7.1 Test Circuit and Timing Waveforms Diagrams ....... 11
8.1 Overview ................................................................. 12
8.2 Functional Block Diagram ....................................... 12
8.3 Feature Description................................................. 13
8.4 Device Functional Modes........................................ 14
9
Application and Implementation ........................ 15
9.1 Application Information............................................ 15
9.2 Typical Application ................................................. 15
10 Power Supply Recommendations ..................... 17
11 Layout................................................................... 18
11.1 Layout Guidelines ................................................. 18
11.2 Layout Example .................................................... 18
11.3 Thermal Considerations ........................................ 18
12 Device and Documentation Support ................. 19
12.1
12.2
12.3
12.4
12.5
Receiving Notification of Documentation Updates
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
19
19
19
19
19
13 Mechanical, Packaging, and Orderable
Information ........................................................... 19
4 Revision History
Changes from Revision A (February 2019) to Revision B
Page
Changes from Original (October 2018) to Revision A
Page
•
2
Changed Advanced Information to Production Data .............................................................................................................. 1
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5 Pin Configuration and Functions
DCK Package
6-Pin SC-70
Top View
Pin Functions
PIN
NO.
NAME
I/O
DESCRIPTION
1
IN
I
2
GND
—
Switch input.
3
ON
I
4
NC
—
No connect pin, leave floating.
Device ground.
Active high switch control input. Do not leave floating.
5
QOD
O
Quick Output Discharge pin. This functionality can be enabled in one of three ways.
•
Placing an external resistor between VOUT and QOD
•
Tying QOD directly to VOUT and using the internal resistor value (RPD)
•
Disabling QOD by leaving pin floating
See the Fall Time (tFALL) and Quick Output Discharge (QOD) section for more
information.
6
VOUT
O
Switch output.
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6 Specifications
6.1 Absolute Maximum Ratings
Over operating free-air temperature range (unless otherwise noted) (1)
MIN
MAX
VIN
Maximum Input Voltage Range
–0.3
6
V
VOUT
Maximum Output Voltage Range
–0.3
6
V
VON
Maximum ON Pin Voltage Range
–0.3
6
V
VQOD
Maximum QOD Pin Voltage Range
–0.3
6
V
IMAX
Maximum Continuous Current
1.5
A
IPLS
Maximum Pulsed Current (2 ms, 2% Duty Cycle)
2.5
TJ
Junction temperature
TSTG
Storage temperature
TLEAD
Maximum Lead Temperature (10 s soldering time)
(1)
UNIT
A
Internally Limited
–65
°C
150
°C
300
°C
Stresses beyond those listed under Absolute Maximum Rating may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Condition. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human body model (HBM), per
ANSI/ESDA/JEDEC JS-001, allpins (1)
±2000
Charged device model (CDM), per JEDEC
specificationJESD22-C101, all pins (2)
±1000
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Manufacturing with
less is possible with the necessary precautions. Pins listed may actually have higher performance.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
VIN
Input Voltage Range
VOUT
VIH
TYP
MAX
UNIT
1.6
5.5
V
Output Voltage Range
0
5.5
V
ON Pin High Voltage Range
1
5.5
V
VIL
ON Pin Low Voltage Range
0
0.35
V
TA
Ambient Temperature
–40
105
°C
6.4 Thermal Information
TPS22919
THERMAL METRIC
(1)
DCK (SC-70)
UNIT
PINS
RθJA
Junction-to-ambient thermal resistance
210.7
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
142.0
°C/W
RθJB
Junction-to-board thermal resistance
69.0
°C/W
ΨJT
Junction-to-top characterization parameter
52.7
°C/W
ΨJB
Junction-to-board characterization parameter
68.8
°C/W
(1)
4
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
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6.5 Electrical Characteristics
Typical values at VIN = 3.6V unless otherwise specified
PARAMETER
TEST CONDITIONS
TJ
MIN
TYP MAX UNIT
Input Supply (VIN)
IQ, VIN
VIN Quiescent Current
ISD, VIN
VIN Shutdown Current
VON ≥ VIH, VOUT = Open
VON ≤ VIL, VOUT = GND
25°C
8
15
µA
20
µA
20
nA
800
nA
125
mΩ
-40°C to 85°C
150
mΩ
-40°C to 105°C
175
mΩ
-40°C to 125°C
200
mΩ
-40°C to 125°C
25°C
2
-40°C to 125°C
ON-Resistance (RON)
25°C
VIN = 5 V
89
25°C
RON
ON-State Resistance
IOUT = -200 mA
VIN = 3.6 V
150
mΩ
-40°C to 85°C
90
200
mΩ
-40°C to 105°C
225
mΩ
-40°C to 125°C
250
mΩ
25°C
VIN = 1.8 V
300
mΩ
-40°C to 85°C
105
400
mΩ
-40°C to 105°C
450
mΩ
-40°C to 125°C
500
mΩ
Output Short Protection (ISC)
ISC
Short Circuit Current Limit
VSC
Output Short Detection Threshold
tSC
Output Short Reponse Time
TSD
Thermal Shutdown
VOUT ≤ VIN - 1.5 V
-40°C to 125°C
VOUT ≤ VSC
-40°C to 125°C
30
500
900
mA
VIN - VOUT
-40°C to 125°C
0.3
0.36
0.46
V
VIN = 1.6V to 5.5V, 10mΩ short
applied
-40°C to 125°C
3
A
2
µs
Rising
180
℃
Falling
145
℃
Enable Pin (ON)
ION
RPD,
ON
ON Pin Leakage
VON ≥ VIH
-40°C to 125°C
Smart Pull Down Resistance
VON ≤ VIL
-40°C to 125°C
530
kΩ
VON ≤ VIL
-40°C to 125°C
24
Ω
100
nA
Quick-output Discharge (QOD)
RPD,
QOD
QOD Pin Internal Discharge
Resistance
6.6 Switching Characteristics
Unless otherwise noted, the typical characteristics in the following table apply to an input voltage of 3.6V, an ambient
temperature of 25°C, and a load of CL = 0.1 µF, RL = 100 Ω
PARAMETER
tON
tR
Turn ON Time
Output Rise Time
SRON
Turn ON Slew
Rate
tOFF
Turn OFF Time
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VIN = 5.0 V
1950
µs
VIN = 3.6 V
1750
µs
VIN = 1.8 V
1500
µs
VIN = 5.0 V
1280
µs
VIN = 3.6 V
1100
µs
VIN = 1.8 V
750
µs
VIN = 5.0 V
3.2
mV/µs
VIN = 3.6 V
2.7
mV/µs
1.8
mV/µs
VIN = 1.8 V
VIN = 1.8 V to 5.0V
RL = 100Ω, CL = 0.1uF
6
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Switching Characteristics (continued)
Unless otherwise noted, the typical characteristics in the following table apply to an input voltage of 3.6V, an ambient
temperature of 25°C, and a load of CL = 0.1 µF, RL = 100 Ω
PARAMETER
TEST CONDITIONS
RL = 100Ω
tFALL
(1)
(2)
6
Output Fall Time
(1)
RL = Open
(2)
MIN
TYP
MAX
UNIT
CL = 0.1uF, RQOD = Short
10
µs
CL = 10uF, RQOD = Short
0.4
ms
CL = 10uF, RQOD = 100 Ω
3.5
ms
CL = 100uF, RQOD = Short
4
ms
Output may not discharge completely if QOD is not connected to VOUT
See the Timing Application section for information on how RL and CL affect Fall Time.
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6.7 Typical Characteristics
200
12
-40qC
25qC
105qC
125qC
Shutdown Current (nA)
160
11.2
10.4
Quiescent Current (PA)
180
140
120
100
80
60
9.6
8.8
8
7.2
6.4
40
5.6
20
4.8
0
1.8
2.2
2.6
3
3.4
3.8
Input Voltage (V)
4.2
4.6
4
1.8
5
150
54
140
48
130
120
110
100
90
80
4.2
4.6
5
D002
5
20 35 50 65 80
Junction Temperature (qC)
95
-40qC
25qC
105qC
125qC
42
36
30
24
18
12
VIN = 1.8V
VIN = 3.6V
VIN = 5.0V
70
6
0
1.8
110 125
2.2
2.6
3
3.4
3.8
Input Voltage (V)
D003
4.2
4.6
5
D004
VON ≤ VIL
ILOAD = –200 mA
Figure 3. On-Resistance vs Junction Temperature
Figure 4. QOD Resistance vs Input Voltage
1
560
ON Pull Down Resistance (k:)
VIL
VIH
0.9
ON Pin Voltage (V)
3
3.4
3.8
Input Voltage (V)
Figure 2. Quiescent Current vs Input Voltage
60
QOD Resistance (:)
On-Resistance (m:)
Figure 1. Shutdown Current vs Input Voltage
-10
2.6
VON ≥ VIH
160
-25
2.2
D001
VON ≤ VIL
60
-40
-40qC
25qC
105qC
125qC
0.8
0.7
0.6
0.5
VIN = 1.8V
VIN = 3.6V
VIN = 5.0V
550
540
530
520
510
0.4
0.3
-40
500
-40
-25
-10
5
20 35 50 65 80
Junction Temperature (°C)
95
-25
-10
110 125
D005
VON ≤ VIL
Figure 5. VIH/VIL vs Junction Temperature
5
20 35 50 65 80
Junction Temperature (qC)
95
110 125
D006
VON ≤ VIL
Figure 6. ON Pull Down Resistance vs Junction
Temperature
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Typical Characteristics (continued)
1750
3000
2750
1500
2500
1250
2000
Rise Time (Ps)
Turn ON Time (Ps)
2250
1750
1500
1250
1000
1000
750
500
750
-40qC
25qC
105qC
125qC
500
250
0
1.8
2.2
2.6
CL = 0.1 μF
3
3.4
3.8
Input Voltage (V)
4.2
4.6
-40qC
25qC
105qC
125qC
250
0
1.8
5
RL = 100 Ω
4
2000
3.5
3
2.5
2
-40qC
25qC
105qC
125qC
1.5
2.6
CL = 0.1 μF
3
3.4
3.8
Input Voltage (V)
4.2
4.6
3
3.4
3.8
Input Voltage (V)
4.2
4.6
5
D008
RL = 100 Ω
Figure 8. Rise Time vs Input Voltage
2100
Turn ON Time (Ps)
Slew Rate (V/ms)
Figure 7. Turn ON Time vs Input Voltage
2.2
2.6
CL = 0.1 μF
4.5
1
1.8
2.2
D007
1900
1800
1700
0.1PF
1PF
10PF
1600
1500
1.8
5
2.2
2.6
D009
RL = 100 Ω
RL = 100 Ω
Figure 9. Output Slew Rate vs Input Voltage
3
3.4
3.8
Input Voltage (V)
4.2
4.6
5
D010
TJ = 25°C
Figure 10. Turn ON Time vs Input Voltage Across Load
Capacitance
1400
3.3
3
Slew Rate (V/ms)
Rise Time (Ps)
1200
1000
2.7
2.4
800
2.1
0.1PF
1PF
10PF
600
1.8
2.2
RL = 100 Ω
2.6
3
3.4
3.8
Input Voltage (V)
4.2
4.6
5
1.8
1.8
2.2
2.6
D011
TJ = 25°C
RL = 100 Ω
Figure 11. Rise Time vs Input Voltage Across Load
Capacitance
8
0.1PF
1PF
10PF
3
3.4
3.8
Input Voltage (V)
4.2
4.6
5
D012
TJ = 25°C
Figure 12. Slew Rate vs Input Voltage Across Load
Capacitance
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2200
1600
2000
1400
Rise Time (Ps)
Turn ON Time (Ps)
Typical Characteristics (continued)
1800
1600
1400
1200
1.8
1200
1000
800
RL = 10:
RL = 100:
RL = Open
2.2
2.6
CL = 0.1 μF
3
3.4
3.8
Input Voltage (V)
4.2
4.6
600
1.8
5
2.2
2.6
3
3.4
3.8
Input Voltage (V)
D013
TJ = 25°C
CL = 0.1 μF
Figure 13. Turn ON Time vs Input Voltage Across Load
Resistance
4.2
4.6
5
D014
TJ = 25°C
Figure 14. Rise Time vs Input Voltage Across Load
Resistance
9
4
8
Turn OFF Time (Ps)
3.5
Slew Rate (V/ms)
RL = 10:
RL = 100:
RL = Open
3
2.5
2
7
6
5
4
3
RL = 10:
RL = 100:
RL = Open
1.5
1
1.8
2.2
CL = 0.1 μF
2.6
3
3.4
3.8
Input Voltage (V)
4.2
4.6
-40qC
25qC
105qC
125qC
2
1
1.8
5
2.2
2.6
3
3.4
3.8
Input Voltage (V)
D015
TJ = 25°C
CL = 0.1 μF
Figure 15. Output Slew Rate vs Input Voltage Across Load
Resistance
4.2
4.6
5
D016
RL = 100 Ω
Figure 16. Turn OFF Time vs Input Voltage
15
14
13
Fall Time (Ps)
12
11
10
9
8
-40qC
25qC
105qC
125qC
7
6
5
1.8
CL = 0.1 μF
2.2
2.6
3
3.4
3.8
Input Voltage (V)
4.2
4.6
5
D018
RL = 100 Ω
RPD,QOD = Short
Figure 17. Fall Time vs Input Voltage
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Typical Characteristics (continued)
CL = 0.1 μF
RL = 100 Ω
CL = 0.1 μF
Figure 18. Rise Time with VIN = 1.8 V
CL = 0.1 μF
RL = 100 Ω
CL = 10 μF
Figure 19. Rise Time with VIN = 3.3 V
CL = Open
Figure 20. Rise Time with VIN = 5 V
RL = 100 Ω
RL = 100 Ω
Figure 21. Turn off with a small load capacitance
VIN = 3.3 V
Figure 22. Turn off with a large load capacitance
10
RL = 100 Ω
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Figure 23. Turn on into an output short
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Typical Characteristics (continued)
VIN = 3.3 V
VIN = 3.3 V
Figure 24. Hot short event when ON
Figure 25. Hot short event when ON and recovery
7 Parameter Measurement Information
7.1 Test Circuit and Timing Waveforms Diagrams
(1)
Rise and fall times of the control signal are 100 ns
(2)
Turn-off times and fall times are dependent on the time constant at the load. For the TPS22919 devices, the internal
pull-down resistance QOD is enabled when the switch is disabled. The time constant is (RQOD + RPD,QOD || RL) × CL.
Figure 26. Test Circuit
Figure 27. Timing Waveforms
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8 Detailed Description
8.1 Overview
The TPS22919 device is a 5.5-V, 1.5-A load switch in a 6-pin SOT-23 package. To reduce voltage drop for low
voltage and high current rails, the device implements a low resistance N-channel MOSFET which reduces the
drop out voltage across the device.
The TPS22919 device has a slow slew rate which helps reduce or eliminate power supply droop because of
large inrush currents. Furthermore, the device features a QOD pin, which allows the configuration of the
discharge rate of VOUT once the switch is disabled. During shutdown, the device has very low leakage currents,
thereby reducing unnecessary leakages for downstream modules during standby. Integrated control logic, driver,
charge pump, and output discharge FET eliminates the need for any external components which reduces
solution size and bill of materials (BOM) count.
The TPS22919 load switch is also self-protected, meaning that it will protect itself from short circuit events on the
output of the device. It also has thermal shutdown to prevent any damage from overheating.
8.2 Functional Block Diagram
12
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8.3 Feature Description
8.3.1 On and Off Control
The ON pin controls the state of the switch. The ON pin is compatible with standard GPIO logic threshold so it
can be used in a wide variety of applications. When power is first applied to VIN, a Smart Pull Down is used to
keep the ON pin from floating until the system sequencing is complete. Once the ON pin is deliberately driven
high (≥VIH), the Smart Pull Down is disconnected to prevent unnecessary power loss. See Table 1 when the ON
Pin Smart Pull Down is active.
Table 1. Smart-ON Pull Down
VON
Pull Down
≤ VIL
Connected
≥ VIH
Disconnected
8.3.2 Output Short Circuit Protection (ISC)
The device will limit current to the output in case of output shorts. When a short occurs, the large VIN to VOUT
voltage drop causes the switch to limit the output current (ISC) within (tSC). When the output is below the hard
short threshold (VSC), a lower limit is used to minimize the power dissipation while the fault is present. The device
will continue to limit the current until it reaches its thermal shutdown temperature. At this time, the device will turn
off until its temperature has lowered by the thermal hysteresis (35°C typical) before turning on again.
Figure 28. Output Short Circuit Current Limit
Figure 29. Output Short Circuit Response
8.3.3 Fall Time (tFALL) and Quick Output Discharge (QOD)
The TPS22919 device includes a QOD pin that can be configured in one of three ways:
• QOD pin shorted to VOUT pin. Using this method, the discharge rate after the switch becomes disabled is
controlled with the value of the internal resistance QOD (RPD,QOD).
• QOD pin connected to VOUT pin using an external resistor RQOD. After the switch becomes disabled, the
discharge rate is controlled by the value of the total discharge resistance. To adjust the total discharge
resistance, Equation 1 can be used:
RDIS = RPD,QOD + RQOD
Where:
•
RDIS = Total output discharge resistance (Ω)
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•
•
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RPD,QOD = Internal pulldown resistance (Ω)
RQOD = External resistance placed between the VOUT and QOD pins (Ω)
(1)
QOD pin is unused and left floating. Using this method, there will be no quick output discharge functionality,
and the output will remain floating after the switch is disabled.
The fall times of the device depend on many factors including the total discharge resistance (RDIS) and the output
capacitance (CL). To calculate the approximate fall time of VOUT use Equation 2.
tFALL = 2.2 × (RDIS || RL) × CL
Where:
•
•
•
•
tFALL = Output Fall Time from 90% to 10% (μs)
RDIS = Total QOD + RQOD Resistance (Ω)
RL = Output Load Resistance (Ω)
CL = Output Load Capacitance (μF)
(2)
8.3.3.1 QOD When System Power is Removed
The adjustable QOD can be used to control the power down sequencing of a system even when the system
power supply is removed. When the power is removed, the input capacitor discharges at VIN. Past a certain VIN
level, the strength of the RPD will be reduced. If there is still remaining charge on the output capacitor, this will
result in longer fall times. For further information regarding this condition, see the Setting Fall Time for Shutdown
Power Sequencing section.
8.4 Device Functional Modes
Table 2 describes the connection of the VOUT pin depending on the state of the ON pin as well as the various
QOD pin configurations.
Table 2. VOUT Connection
14
ON
QOD CONFIGURATION
TPS22919 VOUT
L
QOD pin connected to VOUT with RQOD
GND (RPD, QOD + RQOD)
L
QOD pin tied to VOUT directly
GND (RPD, QOD)
L
QOD pin left open
Floating
H
N/A
VIN
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9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
This section highlights some of the design considerations when implementing this device in various applications.
9.2 Typical Application
This typical application demonstrates how the TPS22919 devices can be used to power downstream modules.
Figure 30. Typical Application Schematic
9.2.1 Design Requirements
For this design example, use the values listed in Table 3 as the design parameters:
Table 3. Design Parameters
DESIGN PARAMETER
EXAMPLE VALUE
Input Voltage (VIN )
3.6 V
Load Current / Resistance (RL)
1 kΩ
Load Capacitance (CL)
47 µF
Minimum Fall Time (tF)
40 ms
Maximum Inrush Current (IRUSH)
150 mA
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9.2.2 Detailed Design Procedure
9.2.2.1 Limiting Inrush Current
Use Equation 3 to find the maximum slew rate value to limit inrush current for a given capacitance:
(Slew Rate) = IRUSH ÷ CL
where
•
•
•
IINRUSH = maximum acceptable inrush current (mA)
CL = capacitance on VOUT (μF)
Slew Rate = Output Slew Rate during turn on (mV/μs)
(3)
Based on Equation 3, the required slew rate to limit the inrush current to 150 mA is 3.2 mV/μs. The TPS22919
has a slew rate of 2.3 mV/μs, so the inrush current will be below 150 mA.
9.2.2.2 Setting Fall Time for Shutdown Power Sequencing
Microcontrollers and processors often have a specific shutdown sequence in which power must be removed.
Using the adjustable Quick Output Discharge function of the TPS22919 device, adding a load switch to each
power rail can be used to manage the power down sequencing. To determine the QOD values for each load
switch, first confirm the power down order of the device you wish to power sequence. Be sure to check if there
are voltage or timing margins that must be maintained during power down.
Once the required fall time is determined, the maximum external discharge resistance (RDIS) value can be found
using Equation 2:
tFALL = 2.2 × (RDIS || RL) × CL
RDIS = 630 Ω
(4)
(5)
Equation 1 can then be used to calculate the RQOD resistance needed to achieve a particular discharge value:
RDIS = QOD + RQOD
RQOD = 600 Ω
(6)
(7)
To ensure a fall time greater than, choose an RQOD value greater than 600 Ω.
9.2.2.3 Application Curves
A.
CL = 47μF
Figure 31. Fall Time (RQOD = 1 kΩ)
16
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10 Power Supply Recommendations
The device is designed to operate with a VIN range of 1.6 V to 5.5 V. The VIN power supply must be well
regulated and placed as close to the device terminal as possible. The power supply must be able to withstand all
transient load current steps. In most situations, using an input capacitance (CIN) of 1 μF is sufficient to prevent
the supply voltage from dipping when the switch is turned on. In cases where the power supply is slow to
respond to a large transient current or large load current step, additional bulk capacitance may be required on
the input.
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11 Layout
11.1 Layout Guidelines
For best performance, all traces must be as short as possible. To be most effective, the input and output
capacitors must be placed close to the device to minimize the effects that parasitic trace inductances may have
on normal operation. Using wide traces for VIN, VOUT, and GND helps minimize the parasitic electrical effects.
11.2 Layout Example
Figure 32. Recommended Board Layout
11.3 Thermal Considerations
The maximum IC junction temperature should be restricted to 125°C under normal operating conditions. To
calculate the maximum allowable dissipation, PD(max) for a given output current and ambient temperature, use
Equation 8:
TJ(MAX) - TA
PD(MAX) =
qJA
where
•
•
•
•
18
PD(MAX) = maximum allowable power dissipation
TJ(MAX) = maximum allowable junction temperature (125°C for the TPS22919 devices)
TA = ambient temperature of the device
θJA = junction to air thermal impedance. Refer to the Thermal Parameters table. This parameter is highly
dependent upon board layout.
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(8)
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12 Device and Documentation Support
12.1 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
12.2 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
12.3 Trademarks
E2E is a trademark of Texas Instruments.
12.4 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
12.5 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
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10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
TPS22919DCKR
ACTIVE
SC70
DCK
6
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 105
1CS
TPS22919DCKT
ACTIVE
SC70
DCK
6
250
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 105
1CS
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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