TPS22924BYZR

Product Folder Sample & Buy Tools & Software Technical Documents Support & Community TPS22924B, TPS22924C ZHCSB59E – APRIL 2011 – REVISED DECEMBER 2015 TPS22924x 3.6V、 、2A、 、导通电阻为 18.3mΩ 的负载开关 1 特性 • • • 1 • • • • • • • 集成单负载开关 输入电压：0.75V 至 3.6V 导通电阻 – VIN = 3.6V 时，RON = 18.3mΩ – VIN = 1.8V 时，RON = 19.6mΩ – VIN = 1.2V 时，RON = 19.4mΩ – VIN = 0.75V 时，RON = 22.7mΩ 小型芯片比例 (CSP)-6 封装 0.9mm x 1.4mm、0.5mm 间距 2A 最大持续开关电流 低关断电流 低阈值控制输入 受控转换率以避免涌入电流 快速输出放电晶体管 静电放电 (ESD) 性能测试符合 JESD 22 标准 – 5000V 人体放电模式 （A114-B，II 类） – 1000V 组件充电模式 (C101) 2 应用 • • • • • • • • • 电池供电类设备 便携式工业设备 便携式医疗设备 便携式媒体播放器 销售点终端 全球卫星定位 (GPS) 设备 数码摄像机 笔记本/平板电脑/电子阅读器 智能手机 3 说明 TPS22924x 是一款具有受控接通功能的小型、低 RON 的负载开关。此器件包含一个 N 通道 MOSFET，此 MOSFET 可运行在 0.75V 至 3.6V 的输入电压范围 内。一个集成的电荷泵把 NMOS 开关偏置，以实现一 个最小的开关导通电阻。此开关可由一个打开/关闭输 入 (ON) 控制，此输入可与低压控制信号直接对接。 为能够在开关关闭时快速进行输出放电，添加了一个 1250Ω 的片上负载电阻。此器件的上升时间受到内部 控制以避免出现浪涌电流。TPS22924B 在 VIN = 3.6V 时的上升时间为 100µs，而 TPS22924C 在 VIN = 3.6V 时的上升时间为 800µs。 TPS22924x 采用超小型、节省空间的 6 引脚 CSP 封 装，并可在 -40°C 至 85°C 温度范围内的自然通风条 件下运行。 器件信息 (1) 部件号 封装 封装尺寸（标称值） TPS22924B DSBGA (6) 1.40mm × 0.90mm TPS22924C DSBGA (6) 1.40mm × 0.90mm (1) 要了解所有可用封装，请见数据表末尾的可订购产品附录。 简化电路原理图 NOTE: SMPS = 开关模式电源 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. English Data Sheet: SLVSAR3 TPS22924B, TPS22924C ZHCSB59E – APRIL 2011 – REVISED DECEMBER 2015 www.ti.com.cn 目录 1 2 3 4 5 6 7 特性 .......................................................................... 应用 .......................................................................... 说明 .......................................................................... 修订历史记录 ........................................................... Device Comparison Table..................................... Pin Configuration and Functions ......................... Specifications......................................................... 7.1 7.2 7.3 7.4 7.5 7.6 7.7 7.8 7.9 7.10 8 1 1 1 2 3 3 4 Absolute Maximum Ratings ..................................... 4 ESD Ratings.............................................................. 4 Recommended Operating Conditions....................... 4 Thermal Information .................................................. 4 Electrical Characteristics........................................... 5 Switching Characteristics, VIN = 3.6 V ...................... 5 Switching Characteristics, VIN = 0.9 V ...................... 5 Typical Characteristics .............................................. 6 AC Characteristics (TPS22924B) ............................. 7 AC Characteristics (TPS22924C) ......................... 10 Parameter Measurement Information ................ 13 9 Detailed Description ............................................ 14 9.1 9.2 9.3 9.4 Overview ................................................................. Functional Block Diagram ....................................... Feature Description................................................. Device Functional Modes........................................ 14 14 14 15 10 Application and Implementation........................ 16 10.1 Application Information.......................................... 16 10.2 Typical Application ................................................ 16 11 Power Supply Recommendations ..................... 18 12 Layout................................................................... 18 12.1 Layout Guidelines ................................................. 18 12.2 Layout Example .................................................... 18 13 器件和文档支持 ..................................................... 19 13.1 13.2 13.3 13.4 13.5 相关链接................................................................ 社区资源................................................................ 商标 ....................................................................... 静电放电警告......................................................... Glossary ................................................................ 19 19 19 19 19 14 机械、封装和可订购信息 ....................................... 19 4 修订历史记录 注：之前版本的页码可能与当前版本有所不同。 Changes from Revision D (August 2014) to Revision E Page • 已添加器件 TPS22924C ........................................................................................................................................................ 1 • 已删除特性：VIN = 2.5V 时，rON = 18.5mΩ............................................................................................................................ 1 • 已删除特性：VIN = 1.0V 时，rON = 20.3mΩ............................................................................................................................ 1 • 已添加文本至说明“而 TPS22924C 在 VIN = 3.6V 时的上升时间为 800µs。” ......................................................................... 1 • Added: TPS22924CYZPR and TPS22924CYZPRB information to Device Comparison Table ............................................ 3 • Added "Storage temperature" to the Absolute Maximum Ratings • Changed Handling Ratings to ESD Ratings........................................................................................................................... 4 • Added section AC Characteristics (TPS22924C) ................................................................................................................ 10 • Changed the Application Curve section ............................................................................................................................... 17 Changes from Revision C (July 2014) to Revision D • (1) table ............................................................................ 4 Page 已添加 引脚配置和功能部分，概述部分，特性 描述部分，电源相关建议部分 ....................................................................... 1 Changes from Revision B (June 2013) to Revision C Page • 已添加 器件信息表. ................................................................................................................................................................. 1 • Added Handling Ratings table. ............................................................................................................................................... 4 • Added Detailed Description section. .................................................................................................................................... 14 2 Copyright © 2011–2015, Texas Instruments Incorporated TPS22924B, TPS22924C www.ti.com.cn ZHCSB59E – APRIL 2011 – REVISED DECEMBER 2015 5 Device Comparison Table TA (1) (2) (3) PACKAGE (1) ORDERABLE PART NUMBER TOP-SIDE MARKING (2) BACKSIDE COATING (3) RISE TIME AT VIN = 3.3V (TYP.) –40°C to 85°C YZ (0.4mm height) TPS22924BYZR _ _ _ 5N _ No 96µs –40°C to 85°C YZP (0.5mm height) TPS22924BYZPRB _ _ _ 5N _ Yes 96µs –40°C to 85°C YZZ (0.35mm height) TPS22924BYZZR _ _ _ 7A _ No 96µs –40°C to 85°C YZP (0.5mm height) TPS22924CYZPR _ _ _ 5L _ No 800µs –40°C to 85°C YZP (0.4mm height) TPS22924CYZPRB _ _ _ 5L _ Yes 800µs Package drawings, thermal data, and symbolization are available at www.ti.com/packaging. The actual top-side marking has three preceding characters to denote year, month, and sequence code, and one following character to designate the wafer fab/assembly site. Pin 1 identifier indicates solder-bump composition (1 = SnPb, • = Pb-free). CSP (DSBGA) devices manufactured with backside coating have an increased resistance to cracking due to the increased physical strength of the package. Devices with backside coating are highly encouraged for new designs. 6 Pin Configuration and Functions YZ/YZP/YZZ PACKAGE C C B B A A 2 1 Laser Marking View 1 2 Bump View Table 1. Pin Assignments (YZ/YZP/YZZ Package) C GND ON B VOUT VIN A VOUT VIN 1 2 Pin Functions NO. NAME DESCRIPTION C1 GND Ground C2 ON Switch control input, active high. Do not leave floating A1, B1 VOUT Switch output A2, B2 VIN Switch input, bypass this input with a ceramic capacitor to ground Copyright © 2011–2015, Texas Instruments Incorporated 3 TPS22924B, TPS22924C ZHCSB59E – APRIL 2011 – REVISED DECEMBER 2015 www.ti.com.cn 7 Specifications 7.1 Absolute Maximum Ratings (1) MIN MAX –0.3 4 V VIN + 0.3 V 4 V Maximum continuous switch current, TA = –40°C to 85°C 2 A Maximum pulsed switch current, 100-µs pulse, 2% duty cycle, TA = –40°C to 85°C 4 A –40 85 °C –65 150 °C VIN Input voltage range VOUT Output voltage range VON Input voltage range IMAX IPLS TA Operating free-air temperature range Tstg Storage temperature (1) –0.3 UNIT Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 7.2 ESD Ratings VALUE ±5000 Charged device model (CDM), per JEDEC specification JESD22-C101, all pins (2) ±1000 Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins V(ESD) (1) (2) Electrostatic discharge UNIT (1) V JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 7.3 Recommended Operating Conditions VIN Input voltage VOUT Output voltage VIH High-level input voltage, ON VIL Low-level input voltage, ON CIN Input capacitance (1) MIN MAX 0.75 3.6 V VIN V VIN = 2.5 V to 3.6 V 1.2 3.6 VIN = 0.75 V to 2.5 V 0.9 3.6 VIN = 2.5 V to 3.6 V 0.6 VIN = 0.75 V to 2.49 V 0.4 1 (1) UNIT V V μF See the Input Capacitor section in Application Information. 7.4 Thermal Information TPS22924x THERMAL METRIC (1) YZ/YZZ/YZP UNIT 6 PINS RθJA Junction-to-ambient thermal resistance 123 RθJC(top) Junction-to-case (top) thermal resistance 17.6 RθJB Junction-to-board thermal resistance 22.8 ψJT Junction-to-top characterization parameter 5.7 ψJB Junction-to-board characterization parameter 22.6 RθJC(bot) Junction-to-case (bottom) thermal resistance N/A (1) 4 °C/W For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953. Copyright © 2011–2015, Texas Instruments Incorporated TPS22924B, TPS22924C www.ti.com.cn ZHCSB59E – APRIL 2011 – REVISED DECEMBER 2015 7.5 Electrical Characteristics VIN = 0.75 V to 3.6 V (unless otherwise noted) PARAMETER IIN Quiescent current IIN(LEAK) TEST CONDITIONS IOUT = 0, VIN = VON (1) 75 42 70 VIN = 1.8 V 50 350 95 200 VIN = 1.0 V 65 110 VIN = 0.75 V 35 70 18.3 19.7 VIN = 1.2 V Full Full VIN = 2.5 V VIN = 1.8 V IOUT = –200 mA VIN = 1.2 V VIN = 1.0 V VIN = 0.75 V RPD Output pulldown resistance (2) VIN = 3.3 V, VON = 0, IOUT = 3 mA ION ON-state input leakage current VON = 0.9 V to 3.6 V or GND (1) (2) TYP MAX VIN = 2.5 V OFF-state supply current VON = GND, OUT = 0V ON-state resistance MIN VIN = 3.6 V VIN = 3.6 V RON TA 25°C 19.4 21.8 21.8 mΩ 28.0 20.3 Full 25°C 19.5 27.4 Full 25°C µA 25.8 19.6 Full 25°C µA 26.0 18.5 Full 25°C 160 3.5 Full 25°C UNIT 21.2 28.6 22.7 25.3 Full 34.8 25°C 1250 1500 Ω Full 0.1 µA Typical values are at VIN = 3.3 V and TA = 25°C. See Output Pulldown in the Application and Implementation section. 7.6 Switching Characteristics, VIN = 3.6 V VIN = 3.6 V, TA = 25°C (unless otherwise noted) PARAMETER TEST CONDITIONS TPS22924B (TYP) TPS22924C (TYP) UNIT tON Turn-ON time RL = 10 Ω, CL = 0.1 μF, VIN = 3.6V 111 800 μs tOFF Turn-OFF time RL = 10 Ω, CL = 0.1 μF, VIN = 3.6V 3 3 μs tr VOUT rise time RL = 10 Ω, CL = 0.1 μF, VIN = 3.6V 96 800 μs tf VOUT fall time RL = 10 Ω, CL = 0.1 μF, VIN = 3.6V 2.5 2.5 μs TPS22924B (TYP) TPS22924C (TYP) UNIT 865 μs 7.7 Switching Characteristics, VIN = 0.9 V VIN = 0.9 V, TA = 25°C (unless otherwise noted) PARAMETER TEST CONDITIONS tON Turn-ON time RL = 10 Ω, CL = 0.1 μF, VIN = 0.9V 160 tOFF Turn-OFF time RL = 10 Ω, CL = 0.1 μF, VIN = 0.9V 20 20 μs tr VOUT rise time RL = 10 Ω, CL = 0.1 μF, VIN = 0.9V 81 500 μs tf VOUT fall time RL = 10 Ω, CL = 0.1 μF, VIN = 0.9V 5 5 μs Copyright © 2011–2015, Texas Instruments Incorporated 5 TPS22924B, TPS22924C ZHCSB59E – APRIL 2011 – REVISED DECEMBER 2015 www.ti.com.cn 7.8 Typical Characteristics Figure 1. On-State Resistance vs Input Voltage Figure 2. On-State Resistance vs Temperature Figure 3. Input Current, Quiescent vs Input Voltage Figure 4. Input Current, Leak vs Input Voltage Figure 5. On Input Threshold 6 Copyright © 2011–2015, Texas Instruments Incorporated TPS22924B, TPS22924C www.ti.com.cn ZHCSB59E – APRIL 2011 – REVISED DECEMBER 2015 7.9 AC Characteristics (TPS22924B) VIN = 3.6 V, CL = 0.1 µF, RL = 10 Ω VIN = 3.6 V, CL = 0.1 µF, RL = 10 Ω Figure 7. Turn-Off Time vs Temperature Figure 6. Turn-On Time vs Temperature VIN = 3.6 V, CL = 0.1 µF, RL = 10 Ω Figure 8. Rise Time vs Temperature VIN = 0.9 V, CL = 0.1 µF, RL = 10 Ω Figure 10. Turn-On Time vs Temperature Copyright © 2011–2015, Texas Instruments Incorporated VIN = 3.6 V, CL = 0.1 µF, RL = 10 Ω Figure 9. Fall Time vs Temperature VIN = 0.9 V, CL = 0.1 µF, RL = 10 Ω Figure 11. Turn-Off Time vs Temperature 7 TPS22924B, TPS22924C ZHCSB59E – APRIL 2011 – REVISED DECEMBER 2015 www.ti.com.cn AC Characteristics (TPS22924B) (continued) VIN = 0.9 V, CL = 0.1 µF, RL = 10 Ω Figure 12. Rise Time vs Temperature VON = 1.8 V, CL = 0.1 µF, RL = 10 Ω VIN = 0.9 V, CL = 0.1 µF, RL = 10 Ω Figure 13. Fall Time vs Temperature VON = 1.8 V, CL = 20 µF, RL = 10 Ω Figure 14. Rise Time vs Input Voltage Figure 15. Rise Time vs Input Voltage CIN = 1 µF, CL = 0.1 µF, RL = 10 Ω, VIN = 0.9 V, TA = 25°C CIN = 1 µF, CL = 0.1 µF, RL = 10 Ω, VIN = 0.9 V, TA = 25°C Figure 17. Turn-Off Response Figure 16. Turn-On Response 8 Copyright © 2011–2015, Texas Instruments Incorporated TPS22924B, TPS22924C www.ti.com.cn ZHCSB59E – APRIL 2011 – REVISED DECEMBER 2015 AC Characteristics (TPS22924B) (continued) CIN = 47 µF, CL = 20 µF, RL = 10 Ω, VIN = 0.9 V, TA = 25°C CIN = 47 µF, CL = 20 µF, RL = 10 Ω, VIN = 0.9 V, TA = 25°C Figure 18. Turn-On Response Figure 19. Turn-Off Response CIN = 1 µF, CL = 0.1 µF, RL = 10 Ω, VIN = 3.6 V, TA = 25°C CIN = 1 µF, CL = 0.1 µF, RL = 10 Ω, VIN = 3.6 V, TA = 25°C Figure 20. Turn-On Response Figure 21. Turn-Off Response CIN = 47 µF, CL = 20 µF, RL = 10 Ω, VIN = 3.6 V, TA = 25°C Figure 22. Turn-On Response Copyright © 2011–2015, Texas Instruments Incorporated CIN = 47 µF, CL = 20 µF, RL = 10 Ω, VIN = 3.6 V, TA = 25°C Figure 23. Turn-Off Response 9 TPS22924B, TPS22924C ZHCSB59E – APRIL 2011 – REVISED DECEMBER 2015 www.ti.com.cn 7.10 AC Characteristics (TPS22924C) 3.1 1200 3.05 1000 3 800 tOFF (µs) tON (µs) 2.95 600 2.9 2.85 400 2.8 200 2.75 0 -40 -15 10 35 60 2.7 -40 85 -15 10 35 60 85 Tem perature (°C) Tem perature (°C) VIN = 3.6 V, CL = 0.1 µF, RL = 10 Ω VIN = 3.6 V, CL = 0.1 µF, RL = 10 Ω Figure 25. Turn-Off Time vs Temperature 1000 2.4 900 2.38 800 2.36 700 2.34 600 2.32 tF (µs) tR (µs) Figure 24. Turn-On Time vs Temperature 500 2.3 400 2.28 300 2.26 200 2.24 100 2.22 0 -40 -15 10 35 60 2.2 -40 85 -15 Tem perature (°C) 10 35 60 85 Tem perature (°C) VIN = 3.6 V, CL = 0.1 µF, RL = 10 Ω VIN = 3.6 V, CL = 0.1 µF, RL = 10 Ω Figure 26. Rise Time vs Temperature Figure 27. Fall Time vs Temperature 1400 20 18 1200 16 14 12 800 tOFF (µs) tON (µs) 1000 600 10 8 6 400 4 200 2 0 -40 -15 10 35 60 85 Tem perature (°C) VIN = 0.9 V, CL = 0.1 µF, RL = 10 Ω Figure 28. Turn-On Time vs Temperature 10 0 -40 -15 10 35 60 85 Tem perature (°C) VIN = 0.9 V, CL = 0.1 µF, RL = 10 Ω Figure 29. Turn-Off Time vs Temperature Copyright © 2011–2015, Texas Instruments Incorporated TPS22924B, TPS22924C www.ti.com.cn ZHCSB59E – APRIL 2011 – REVISED DECEMBER 2015 AC Characteristics (TPS22924C) (continued) 700 6 600 5 500 tF (µs) tR (µs) 4 400 3 300 2 200 1 100 0 -40 -15 10 35 60 0 -40 85 -15 10 Tem perature (°C) 35 60 85 Tem perature (°C) VIN = 0.9 V, CL = 0.1 µF, RL = 10 Ω VIN = 0.9 V, CL = 0.1 µF, RL = 10 Ω Figure 30. Rise Time vs Temperature Figure 31. Fall Time vs Temperature 1400 1200 TA = -40°C TA = -40°C 1200 TA = 25°C 1000 TA = 25°C TA = 85°C TA = 85°C 1000 tR (µs) tR (µs) 800 800 600 600 400 400 200 200 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 V IN (V) VON = 1.8 V, CL = 0.1 µF, RL = 10 Ω 0 0.5 1 1.5 2 2.5 3 3.5 4 V IN (V) VON = 1.8 V, CL = 20 µF, RL = 10 Ω Figure 32. Rise Time vs Input Voltage Figure 33. Rise Time vs Input Voltage CIN = 1 µF, CL = 0.1 µF, RL = 10 Ω, VIN = 0.9 V, TA = 25°C CIN = 1 µF, CL = 0.1 µF, RL = 10 Ω, VIN = 0.9 V, TA = 25°C Figure 35. Turn-Off Response Figure 34. Turn-On Response Copyright © 2011–2015, Texas Instruments Incorporated 11 TPS22924B, TPS22924C ZHCSB59E – APRIL 2011 – REVISED DECEMBER 2015 www.ti.com.cn AC Characteristics (TPS22924C) (continued) CIN = 47 µF, CL = 20 µF, RL = 10 Ω, VIN = 0.9 V, TA = 25°C CIN = 47 µF, CL = 20 µF, RL = 10 Ω, VIN = 0.9 V, TA = 25°C Figure 36. Turn-On Response Figure 37. Turn-Off Response CIN = 1 µF, CL = 0.1 µF, RL = 10 Ω, VIN = 3.6 V, TA = 25°C CIN = 1 µF, CL = 0.1 µF, RL = 10 Ω, VIN = 3.6 V, TA = 25°C Figure 38. Turn-On Response Figure 39. Turn-Off Response CIN = 47 µF, CL = 20 µF, RL = 10 Ω, VIN = 3.6 V, TA = 25°C Figure 40. Turn-On Response 12 CIN = 47 µF, CL = 20 µF, RL = 10 Ω, VIN = 3.6 V, TA = 25°C Figure 41. Turn-Off Response Copyright © 2011–2015, Texas Instruments Incorporated TPS22924B, TPS22924C www.ti.com.cn ZHCSB59E – APRIL 2011 – REVISED DECEMBER 2015 8 Parameter Measurement Information Figure 42. Test Circuit and tON/tOFF Waveforms Copyright © 2011–2015, Texas Instruments Incorporated 13 TPS22924B, TPS22924C ZHCSB59E – APRIL 2011 – REVISED DECEMBER 2015 www.ti.com.cn 9 Detailed Description 9.1 Overview The TPS22924x is a single channel, 2-A load switch in a small, space-saving CSP-6 package. This device implements a low resistance N-channel MOSFET with a controlled rise time for applications that need to limit the inrush current. This device is also designed to have very low leakage current during off state. This prevents downstream circuits from pulling high standby current from the supply. Integrated control logic, driver, power supply, and output discharge FET eliminates the need for additional external components, which reduces solution size and bill of materials (BOM) count. 9.2 Functional Block Diagram VIN Charge Pump ON Control Logic VOUT GND 9.3 Feature Description 9.3.1 ON/OFF Control The ON pin controls the state of the switch. Asserting ON high enables the switch. ON is active high and has a low threshold, making it capable of interfacing with low-voltage signals. The ON pin is compatible with standard GPIO logic threshold. It can be used with any microcontroller with 1.2-V, 1.8-V, 2.5-V or 3.3-V GPIOs. 9.3.2 Output Capacitor Due to the integral body diode in the NMOS switch, a CIN greater than CL is highly recommended. A CL greater than CIN can cause VOUT to exceed VIN when the system supply is removed. This could result in current flow through the body diode from VOUT to VIN. A CIN to CL ratio of 10 to 1 is recommended for minimizing VIN dip caused by inrush currents during startup. 9.3.3 Output Pulldown The output pulldown is active when the user is turning off the main pass FET. The pulldown discharges the output rail to approximately 10% of the rail, then the output pulldown is automatically disconnected to optimize the shutdown current. 14 Copyright © 2011–2015, Texas Instruments Incorporated TPS22924B, TPS22924C www.ti.com.cn ZHCSB59E – APRIL 2011 – REVISED DECEMBER 2015 9.4 Device Functional Modes (1) ON (CONTROL SIGNAL) VIN to VOUT VOUT to GND L OFF ON H ON OFF (1) See application section Output Pulldown . Copyright © 2011–2015, Texas Instruments Incorporated 15 TPS22924B, TPS22924C ZHCSB59E – APRIL 2011 – REVISED DECEMBER 2015 www.ti.com.cn 10 Application and Implementation NOTE Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality. 10.1 Application Information 10.1.1 VIN to VOUT Voltage Drop The VIN to VOUT voltage drop in the device is determined by the RON of the device and the load current. The RON of the device depends upon the VIN condition of the device. Refer to the RON specification of the device in the Electrical Characteristics table of this datasheet. Once the RON of the device is determined based upon the VIN conditions, use Equation 1 to calculate the VIN to VOUT voltage drop: ΔV = ILOAD × RON where • • • • ΔV = Voltage drop from VIN to VOUT ILOAD = Load current RON = On-resistance of the device for a specific VIN An appropriate ILOAD must be chosen such that the IMAX specification of the device is not violated. (1) 10.1.2 Input Capacitor To limit the voltage drop on the input supply caused by transient inrush currents, when the switch turns on into a discharged load capacitor or short-circuit, a capacitor needs to be placed between VIN and GND. A 1-μF ceramic capacitor, CIN, placed close to the pins is usually sufficient. Higher values of CIN can be used to further reduce the voltage drop. 10.1.3 Output Capacitor A CIN to CL ratio of 10 to 1 is recommended for minimizing VIN dip caused by inrush currents during startup. 10.2 Typical Application Figure 43. Typical Application 10.2.1 Design Requirements DESIGN PARAMETER EXAMPLE VALUE VIN 3.6 V CL 1 µF Maximum Acceptable Inrush Current 40 mA 16 Copyright © 2011–2015, Texas Instruments Incorporated TPS22924B, TPS22924C www.ti.com.cn ZHCSB59E – APRIL 2011 – REVISED DECEMBER 2015 10.2.2 Detailed Design Procedure 10.2.2.1 Managing Inrush Current When the switch is enabled, the output capacitors must be charged up from 0-V to VIN. This charge arrives in the form of inrush current. Inrush current can be calculated using the following equation: dv Inrush Current = C ´ dt where • C = Output capacitance • dv dt = Output slew rate (2) The TPS22924B offers a very slow controlled rise time for minimizing inrush current. This device can be selected based upon the maximum acceptable slew rate which can be calculated using the design requirements and the inrush current equation. An output capacitance of 1.0 μF will be used since the amount of inrush increases with output capacitance: dv 40 mA = 1.0 mF ´ dt (3) dv = 40 V/ms dt (4) To ensure an inrush current of less than 40 mA, a device with a slew rate less than 40 V/ms must be used. The TPS22924B has a typical rise time of 96 μs at 3.6 V. This results in a slew rate of 37.5 V/ms which meets the above design requirements. For an even lower inrush current requirement, the TPS22924C can be used. The slower rise time of 800 μs at 3.6V results in a slew rate of 4.5 V/ms, well below the design requirements. 10.2.3 Application Curve VIN = 3.6 V CL = 1 µF TA = 25°C Figure 44. TPS22924B Inrush Current With a 1 µF Capacitor Copyright © 2011–2015, Texas Instruments Incorporated VIN = 3.6 V CL = 1 µF TA = 25°C Figure 45. TPS22924C Inrush Current With a 1 µF Capacitor 17 TPS22924B, TPS22924C ZHCSB59E – APRIL 2011 – REVISED DECEMBER 2015 www.ti.com.cn 11 Power Supply Recommendations The device is designed to operate with a VIN range of 0.75 V to 3.6 V. This supply must be well regulated and placed as close to the device terminal as possible with the recommended 1 µF bypass capacitor. If the supply is located more than a few inches from the device terminals, additional bulk capacitance may be required in addition to the ceramic bypass capacitors. If additional bulk capacitance is required, an electrolytic, tantalum, or ceramic capacitor of 10 µF may be sufficient. 12 Layout 12.1 Layout Guidelines For best performance, all traces should be as short as possible. To be most effective, the input and output capacitors should be placed close to the device to minimize the effects that parasitic trace inductances may have on normal and short-circuit operation. Using wide traces for VIN, VOUT, and GND helps minimize the parasitic electrical effects. 12.2 Layout Example Figure 46. TPS22924x Layout Example 18 版权 © 2011–2015, Texas Instruments Incorporated TPS22924B, TPS22924C www.ti.com.cn ZHCSB59E – APRIL 2011 – REVISED DECEMBER 2015 13 器件和文档支持 13.1 相关链接 下面的表格列出了快速访问链接。范围包括技术文档、支持与社区资源、工具和软件，以及样片或购买的快速访 问。 表 2. 相关链接 部件 产品文件夹 样片与购买 技术文档 工具与软件 支持与社区 TPS22924B 请单击此处 请单击此处 请单击此处 请单击此处 请单击此处 TPS22924C 请单击此处 请单击此处 请单击此处 请单击此处 请单击此处 13.2 社区资源 The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers. Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support. 13.3 商标 E2E is a trademark of Texas Instruments. All other trademarks are the property of their respective owners. 13.4 静电放电警告 这些装置包含有限的内置 ESD 保护。 存储或装卸时，应将导线一起截短或将装置放置于导电泡棉中，以防止 MOS 门极遭受静电损 伤。 13.5 Glossary SLYZ022 — TI Glossary. 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LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of