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TPS22924D
SLVSBT4A – MAY 2013 – REVISED AUGUST 2015
TPS22924D 3.6-V, 2-A, 18.3-mΩ On-Resistance Load Switch
1 Features
2 Applications
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Integrated Single-Channel Load Switch
Input Voltage: 0.75 V to 3.6 V
On-Resistance
– rON = 18.3 mΩ at VIN = 3.6 V
– rON = 18.5 mΩ at VIN = 2.5 V
– rON = 19.6 mΩ at VIN = 1.8 V
– rON = 19.4 mΩ at VIN = 1.2 V
– rON = 20.3 mΩ at VIN = 1.0 V
– rON = 22.7 mΩ at VIN = 0.75 V
Small CSP-6 package
0.9 mm x 1.4 mm, 0.5-mm Pitch
2-A Maximum Continuous Switch Current
Low Shutdown Current
Low Threshold Control Input
Controlled Slew Rate to Avoid Inrush Currents
Quick Output Discharge Transistor
ESD Performance Tested Per JESD 22
– 5000-V Human-Body Model
(A114-B, Class II)
– 1000-V Charged-Device Model (C101)
Battery Powered Equipment
Portable Industrial Equipment
Portable Medical Equipment
Portable Media Players
Point of Sales Terminal
GPS Devices
Digital Cameras
Notebooks / Tablet PCs / eReaders
Smartphones
3 Description
The TPS22924D is a small, low RON load switch with
controlled turn on. The device contains a N-channel
MOSFET that can operate over an input voltage
range of 0.75 V to 3.6 V. An integrated charge pump
biases the NMOS switch to achieve a minimum
switch ON resistance. The switch is controlled by an
on/off input (ON), which is capable of interfacing
directly with low-voltage control signals.
A 1250 Ω on-chip load resistor is added for output
quick discharge when the switch is turned off. The
rise time of the device is internally controlled to avoid
inrush current. The TPS22924D features a rise time
of 6200 µs at 3.6 V.
The TPS22924D is available in an ultra-small, spacesaving 6-pin CSP package and is characterized for
operation over the free-air temperature range of
–40ºC to 85ºC.
Device Information
PART NUMBER
TPS22924D
PACKAGE
(1)
BODY SIZE (NOM)
DSBGA (6)
0.9 mm x 1.4 mm
(1) For all available packages, see the orderable addendum at
the end of the datasheet.
Typical Application Diagram
VIN
Power
Supply
CIN
ON
VOUT
ON
CL
RL
OFF
TPS22924D
GND
GND
GND
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TPS22924D
SLVSBT4A – MAY 2013 – REVISED AUGUST 2015
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Table of Contents
1
2
3
4
5
6
7
8
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
3
6.1
6.2
6.3
6.4
6.5
6.6
6.7
6.8
6.9
3
3
4
4
4
5
5
5
6
Absolute Maximum Ratings .....................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Switching Characteristics: VIN = 3.6 V ......................
Switching Characteristics: VIN = 0.9 V ......................
Dissipation Ratings ...................................................
Typical Characteristics ..............................................
Parametric Measurement Information ............... 10
Detailed Description ............................................ 11
8.1
8.2
8.3
8.4
9
Overview .................................................................
Functional Block Diagram .......................................
Feature Description.................................................
Device Functional Modes........................................
11
11
11
12
Application and Implementation ........................ 13
9.1 Application Information............................................ 13
9.2 Typical Application ................................................. 13
10 Power Supply Recommendations ..................... 15
11 Layout................................................................... 15
11.1 Layout Guidelines ................................................. 15
11.2 Layout Example .................................................... 15
12 Device and Documentation Support ................. 16
12.1
12.2
12.3
12.4
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
16
16
16
16
13 Mechanical, Packaging, and Orderable
Information ........................................................... 16
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Original (May 2013) to Revision A
•
2
Page
Added Pin Configuration and Functions section, ESD Ratings table, Feature Description section, Device Functional
Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device
and Documentation Support section, and Mechanical, Packaging, and Orderable Information section .............................. 1
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5 Pin Configuration and Functions
YZP Package
6-Pin DSBGA
C
C
B
B
A
A
2 1
Laser Marking View
1 2
Bump View
Pin Assignments (YZP Package)
C
GND
ON
B
VOUT
VIN
A
VOUT
VIN
1
2
Pin Functions
PIN
I/O
DESCRIPTION
NAME
NO.
GND
C1
-—
ON
C2
I
Switch control input, active high. Do not leave floating
VIN
A2, B2
I
Switch input. Place a decoupling capacitor from VIN to GND. See Application Information section for
details about input capacitors.
VOUT
A1, B1
O
Switch output
Ground
6 Specifications
6.1 Absolute Maximum Ratings
MIN
MAX
UNIT
–0.3
4
V
VIN + 0.3
V
4
V
Maximum continuous switch current, TA = -40°C to 85°C
2
A
Maximum pulsed switch current, 100-µs pulse, 2% duty cycle, TA = -40°C to 85°C
4
A
–40
85
°C
–65
150
°C
VIN
Input voltage
VOUT
Output voltage
VON
ON pin voltage
IMAX
IPLS
TA
Operating free-air temperature
Tstg
Storage temperature
(1)
(1)
–0.3
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6.2 ESD Ratings
VALUE
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001
V(ESD)
Electrostatic discharge
Charged-device model (CDM), per JEDEC specification JESD22-C101
(2)
(1)
(2)
(1)
UNIT
±5000
±1000
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
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6.3 Recommended Operating Conditions
VIN
Input voltage
VOUT
Output voltage
VIH
High-level input voltage, ON
VIL
Low-level input voltage, ON
CIN
Input capacitance
(1)
MIN
MAX
0.75
3.6
UNIT
V
VIN
V
VIN = 2.5 V to 3.6 V
1.2
3.6
VIN = 0.75 V to 2.5 V
0.9
3.6
VIN = 2.5 V to 3.6 V
0.6
VIN = 0.75 V to 2.49 V
0.4
1
V
V
(1)
μF
See the Input Capacitor section in Application Information.
6.4 Thermal Information
TPS22924D
THERMAL METRIC
(1)
YZP (DSBGA)
UNIT
6 PINS
RθJA
Junction-to-ambient thermal resistance
123
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
17.6
°C/W
RθJB
Junction-to-board thermal resistance
22.8
°C/W
ψJT
Junction-to-top characterization parameter
5.7
°C/W
ψJB
Junction-to-board characterization parameter
22.6
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
N/A
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
6.5 Electrical Characteristics
VIN = 0.75 V to 3.6 V (unless otherwise noted)
PARAMETER
IQ, VIN
ISD, VIN
Quiescent current
Shutdown current
(1)
MAX
VIN = 3.6 V
75
160
VIN = 2.5 V
42
100
VIN = 1.8 V
50
350
95
200
VIN = 1.0 V
65
120
VIN = 0.75 V
35
TEST CONDITIONS
VOUT = open, VIN = VON
VIN = 1.2 V
VON = GND, VOUT = 0V
VIN = 2.5 V
VIN = 1.8 V
ON-state resistance
IOUT = -200 mA
VIN = 1.2 V
VIN = 1.0 V
VIN = 0.75 V
RPD
(1)
(2)
4
Output pulldown
resistance (2)
MIN
Full
TYP
Full
VIN = 3.6 V
RON
TA
VIN = 3.3 V, VON = 0, IOUT = 1 mA
18.3
Full
µA
22.8
26.8
25°C
18.5
Full
23.0
27.2
25°C
19.6
Full
24.1
28.1
25°C
19.4
Full
23.9
mΩ
28.0
25°C
20.3
Full
24.8
29.0
25°C
22.7
Full
25°C
µA
80
4.0
25°C
UNIT
27.2
34.8
450
1400
Ω
Typical values are at VIN = 3.3 V and TA = 25°C.
See Output Pulldown.
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Electrical Characteristics (continued)
VIN = 0.75 V to 3.6 V (unless otherwise noted)
PARAMETER
ION
TEST CONDITIONS
ON-pin input leakage
current
VON = 0.9 V to 3.6 V or GND
TA
MIN
TYP
Full
(1)
MAX
UNIT
0.1
µA
6.6 Switching Characteristics: VIN = 3.6 V
VIN = 3.6 V, TA = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
tON
Turn-ON time
RL = 10 Ω, CL = 0.1 μF, VIN = 3.6V
7400
μs
tOFF
Turn-OFF time
RL = 10 Ω, CL = 0.1 μF, VIN = 3.6V
2.5
μs
tr
VOUT rise time
RL = 10 Ω, CL = 0.1 μF, VIN = 3.6V
6200
μs
tf
VOUT fall time
RL = 10 Ω, CL = 0.1 μF, VIN = 3.6V
2
μs
6.7 Switching Characteristics: VIN = 0.9 V
VIN = 0.9 V, TA = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
tON
Turn-ON time
RL = 10 Ω, CL = 0.1 μF, VIN = 0.9V
6300
μs
tOFF
Turn-OFF time
RL = 10 Ω, CL = 0.1 μF, VIN = 0.9V
12
μs
tr
VOUT rise time
RL = 10 Ω, CL = 0.1 μF, VIN = 0.9V
3200
μs
tf
VOUT fall time
RL = 10 Ω, CL = 0.1 μF, VIN = 0.9V
3
μs
6.8 Dissipation Ratings
BOARD
High-K
(1)
(1)
DERATING FACTOR
ABOVE
TA = 25°C
TA < 25°C
TA = 70°C
TA = 85°C
- 8.1063 mW/°C
810.63 mW
445.84 mW
324.25 mW
The JEDEC high-K (2s2p) board used to derive this data was a 3- × 3-inch, multilayer board with 1-ounce internal power and ground
planes and 2-ounce copper traces on top and bottom of the board.
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6.9 Typical Characteristics
30
30
VIN = 0.75V
VIN = 1V
VIN = 1.2V
VIN = 1.8V
VIN = 2.5V
VIN = 3.6V
-40°C
28
25°C
85°C
26
26
24
22
RON (m
)
RON (m
)
22
20
18
18
16
14
14
12
IOUT = -200mA
IOUT = -200mA
10
10
0.5
1
1.5
2
2.5
3
3.5
4
-40
-15
10
VIN (V)
35
60
85
Temperature (C)
C001
C002
Figure 1. On-State Resistance vs Input Voltage
250
Figure 2. On-State Resistance vs Temperature
0.6
-40°C
-40°C
VOUT = Open, VON = VIN
85°C
200
VON = VOUT = 0V
25°C
25°C
85°C
0.5
ISD, VIN (µA)
IQ, VIN (µA)
0.4
150
100
0.3
0.2
50
0.1
0
0
0.5
1
1.5
2
2.5
3
3.5
4
0.5
1
1.5
2
2.5
3
3.5
C003
C005
Figure 3. Quiescent Current vs Input Voltage
4
10000
VIN = 3.6V
VIN = 1V
VIN = 1.2V
9000
VIN = 1.8V
3
VIN = 2.5V
8000
VIN = 3.6V
tON (µs)
2.5
VOUT (V)
Figure 4. Shutdown Current vs Input Voltage
VIN = 0.75V
3.5
4
VIN (V)
VIN (V)
2
7000
1.5
6000
1
5000
0.5
CL = 0.1µF, CIN = 1µF, RL = 10O
0
4000
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-40
VON (V)
-15
10
35
60
C009
Figure 5. On Input Threshold
6
85
Temperature (C)
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C015
Figure 6. Turnon Time vs Temperature
(VIN = 3.6 V, CL = 0.1 µF, RL = 10 Ω)
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Typical Characteristics (continued)
3
10000
VIN = 3.6V
VIN = 3.6V
9000
2.8
8000
tRise (µs)
tOFF (µs)
2.6
7000
2.4
6000
2.2
5000
CL = 0.1µF, CIN = 1µF, RL = 10O
CL = 0.1µF, CIN = 1µF, RL = 10O
2
4000
-40
-15
10
35
60
85
-40
-15
Temperature (C)
10
35
60
85
Temperature (C)
C016
C017
Figure 7. Turnoff Time vs Temperature
(VIN = 3.6 V, CL = 0.1 µF, RL = 10 Ω)
Figure 8. Rise Time vs Temperature
(VIN = 3.6 V, CL = 0.1 µF, RL = 10 Ω)
3
10000
VIN = 0.9V
VIN = 3.6V
9000
2.6
8000
tON (µs)
tFall (µs)
2.2
7000
1.8
6000
1.4
5000
CL = 0.1µF, CIN = 1µF, RL = 10O
CL = 0.1µF, CIN = 1µF, RL = 10O
1
4000
-40
-15
10
35
60
85
-40
-15
Temperature (C)
10
35
60
85
Temperature (C)
C018
C019
Figure 9. Fall Time vs Temperature
(VIN = 3.6 V, CL = 0.1 µF, RL = 10 Ω)
Figure 10. Turnon Time vs Temperature
(VIN = 0.9 V, CL = 0.1 µF, RL = 10 Ω)
15
5000
VIN = 0.9V
VIN = 0.9V
4500
14
4000
tRise (µs)
tOFF (µs)
13
3500
12
3000
11
2500
CL = 0.1µF, CIN = 1µF, RL = 10O
CL = 0.1µF, CIN = 1µF, RL = 10O
10
2000
-40
-15
10
35
60
85
-40
Temperature (C)
-15
10
35
60
85
Temperature (C)
C020
Figure 11. Turnoff Time vs Temperature
(VIN = 0.9 V, CL = 0.1 µF, RL = 10 Ω)
C021
Figure 12. Rise Time vs Temperature
(VIN = 0.9 V, CL = 0.1 µF, RL = 10 Ω)
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Typical Characteristics (continued)
4.5
10000
VIN = 0.9V
-40°C
25°C
9000
85°C
4
8000
7000
tr (µs)
tFall (µs)
3.5
3
6000
5000
4000
2.5
3000
CL = 0.1µF, CIN = 1µF, RL = 10O
CL = 0.1µF, CIN = 1µF, RL = 10
2
2000
-40
-15
10
35
60
85
0.5
1
1.5
2
Temperature (C)
2.5
3
3.5
4
VIN (V)
C022
C013
Figure 13. Fall Time vs Temperature
(VIN = 0.9 V, CL = 0.1 µF, RL = 10 Ω)
Figure 14. Rise Time vs Input Voltage
(CL = 0.1 µF, RL = 10 Ω, VON = 1.8 V)
20
14000
-40°C
25°C
18
12000
85°C
16
14
10000
tOFF (µs)
tON (µs)
12
8000
10
8
6000
6
4
4000
-40°C
2
25°C
CL = 0.1µF, CIN = 1µF RL = 10
0.5
1
1.5
CL = 0.1µF, CIN = 1µF RL = 10
85°C
2000
2
2.5
3
3.5
0
4
0.5
1
VIN (V)
1.5
2
2.5
3
3.5
4
VIN (V)
C010
Figure 15. Turnon Time vs Input Voltage
(CL = 0.1 µF, RL = 10 Ω, VON = 1.8 V)
6
C011
Figure 16. Turnoff Time vs Input Voltage
(CL = 0.1 µF, RL = 10 Ω, VON = 1.8 V)
-40°C
25°C
85°C
5
tf (µs)
4
3
2
1
CL = 0.1µF, CIN = 1µF, RL = 10
0
0.5
1
1.5
2
2.5
3
3.5
4
VIN (V)
C014
Figure 17. Fall Time vs Input Voltage
(CL = 0.1 µF, RL = 10 Ω, VON = 1.8 V)
8
Figure 18. Turnon Response
(CIN = 1 µF, CL = 0.1 µF, RL = 10 Ω, VIN = 0.9 V, TA = 25°C)
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Typical Characteristics (continued)
Figure 19. Turnoff Response
(CIN = 1 µF, CL = 0.1 µF, RL = 10 Ω, VIN = 0.9 V, TA = 25°C)
Figure 20. Turnon Response
(CIN = 10 µF, CL = 1 µF, RL = 10 Ω, VIN = 0.9 V, TA = 25°C)
Figure 21. Turnoff Response
(CIN = 10 µF, CL = 1 µF, RL = 10 Ω, VIN = 0.9 V, TA = 25°C)
Figure 22. Turnon Response
(CIN = 1 µF, CL = 0.1 µF, RL = 10 Ω, VIN = 3.6 V, TA = 25°C)
Figure 23. Turnoff Response
(CIN = 1 µF, CL = 0.1 µF, RL = 10 Ω, VIN = 3.6 V, TA = 25°C)
Figure 24. Turnon Response
(CIN = 10 µF, CL = 1 µF, RL = 10 Ω, VIN = 3.6 V, TA = 25°C)
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Typical Characteristics (continued)
Figure 25. Turnoff Response
(CIN = 10 µF, CL = 1 µF, RL = 10 Ω, VIN = 3.6 V, TA = 25°C)
7 Parametric Measurement Information
VIN
VOUT
CIN = 1µF
ON
(A)
+
±
ON
CL
RL
OFF
GND
TPS22924D
GND
GND
TEST CIRCUIT
VON
50%
50%
VOUT
50%
50%
tf
tr
tOFF
tON
90%
VOUT
10%
90%
10%
tON/tOFF WAVEFORMS
A.
Rise and fall times of the control signal is 100ns
Figure 26. Test Circuit and tON/tOFF Waveforms
10
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8 Detailed Description
8.1 Overview
The TPS22924D is a single channel, 2-A load switch in a small, space-saving CSP-6 package. This device
implements a low resistance N-channel MOSFET with a controlled rise time for applications that need to limit the
inrush current.
This device is also designed to have very low leakage current during off state. This prevents downstream circuits
from pulling high standby current from the supply. Integrated control logic, driver, power supply, and output
discharge FET eliminates the need for additional external components, which reduces solution size and bill of
materials (BOM) count.
8.2 Functional Block Diagram
VIN
Charge
Pump
ON
Control
Logic
VOUT
GND
8.3 Feature Description
Table 1 lists the features of the TPS2222924D device.
Table 1. Feature List
(1)
DEVICE
rON (TYP)
AT 3.6 V
SLEW RATE (TYP)
AT 3.6 V
QUICK OUTPUT
DISCHARGE (1)
MAXIMUM OUTPUT
CURRENT
ENABLE
TPS22924D
18.3 mΩ
6200 μs
Yes
2A
Active high
This feature discharges the output of the switch to ground through a 1250-Ω resistor, preventing the output from floating. See the Output
Pulldown section in Application Information.
8.3.1 ON/OFF Control
The ON pin controls the state of the switch. Asserting ON high enables the switch. ON is active high and has a
low threshold, making it capable of interfacing with low-voltage signals. The ON pin is compatible with standard
GPIO logic threshold. It can be used with any microcontroller with 1.2-V, 1.8-V, 2.5-V or 3.3-V GPIOs.
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8.3.2 Output Pulldown
The output pulldown is active when the user is turning off the main pass FET. The pulldown discharges the
output rail to approximately 10% of the rail, then the output pulldown is automatically disconnected to optimize
the shutdown current.
8.4 Device Functional Modes
Table 2 lists the functional modes of the TPS22924D device.
Table 2. Function Table
ON (Control Signal)
VIN to VOUT
L
OFF
ON
H
ON
OFF
(1)
12
VOUT to GND
(1)
See Output Pulldown.
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9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
9.1.1 VIN to VOUT Voltage Drop
The VIN to VOUT voltage drop in the device is determined by the RON of the device and the load current. The
RON of the device depends upon the VIN condition of the device. Refer to the RON specification of the device in
the Electrical Characteristics table of this datasheet. Once the RON of the device is determined based upon the
VIN conditions, use Equation 1 to calculate the VIN to VOUT voltage drop:
ΔV = ILOAD × RON
where
•
•
•
•
ΔV = Voltage drop from VIN to VOUT
ILOAD = Load current
RON = On-resistance of the device for a specific VIN
An appropriate ILOAD must be chosen such that the IMAX specification of the device is not violated.
(1)
9.1.2 Input Capacitor
To limit the voltage drop on the input supply caused by transient inrush currents when the switch turns on into a
discharged load capacitor or short-circuit, a capacitor needs to be placed between VIN and GND. A 1-μF ceramic
capacitor, CIN, placed close to the pins is usually sufficient. Higher values of CIN can be used to further reduce
the voltage drop.
9.1.3 Output Capacitor
Due to the integrated body diode in the NMOS switch, a CIN greater than CL is highly recommended. A CL
greater than CIN can cause VOUT to exceed VIN when the system supply is removed. This could result in current
flow through the body diode from VOUT to VIN. A CIN to CL ratio of 10 to 1 is recommended for minimizing VIN dip
caused by inrush currents during startup.
9.2 Typical Application
VIN
Power
Supply
CIN
ON
VOUT
ON
CL
RL
OFF
TPS22924D
GND
GND
GND
Figure 27. TPS22924D Typical Application
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Typical Application (continued)
9.2.1 Design Requirements
Table 3 shows the design requirements for this application.
Table 3. Design Parameters
DESIGN PARAMETER
EXAMPLE VALUE
VIN
3.6 V
CL
100 µF
Maximum Acceptable Inrush
Current
100 mA
9.2.2 Detailed Design Procedure
9.2.2.1 Managing Inrush Current
When the switch is enabled, the output capacitors must be charged up from 0 V to VIN. This charge arrives in the
form of inrush current. Inrush current can be calculated using the following equation:
dv
Inrush Current = C ´
dt
where
•
•
•
C = Output capacitance
dv = Output voltage
dt = Rise time
(2)
The TPS22924D offers a very slow controlled rise time for minimizing inrush current. This device can be selected
based upon the maximum acceptable slew rate which can be calculated using the design requirements and the
inrush current equation. An output capacitance of 100 μF will be used since the amount of inrush increases with
output capacitance:
100mA = 100μF × (3.6V / dt)
dt = 3600μs
(3)
(4)
To ensure an inrush current of less than 100 mA, a device with a rise time greater than 3600 μs must be used.
The TPS22924D has a typical rise time of 6200 μs at 3.6 V. This meets the above design requirements.
9.2.3 Application Curve
Figure 28 shows the TPS22924D turning on into a 100 μF load.
Figure 28. TPS22924D Inrush Current With a 100μF Load
14
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10 Power Supply Recommendations
The device is designed to operate with a VIN range of 0.75 V to 3.6 V. This supply must be well regulated and
placed as close to the device terminal as possible with the recommended 1 µF bypass capacitor. If the supply is
located more than a few inches from the device terminals, additional bulk capacitance may be required in
addition to the ceramic bypass capacitors. If additional bulk capacitance is required, an electrolytic, tantalum, or
ceramic capacitor of 10 µF may be sufficient.
11 Layout
11.1 Layout Guidelines
For best performance, all traces should be as short as possible. To be most effective, the input and output
capacitors should be placed close to the device to minimize the effects that parasitic trace inductances may have
on normal and short-circuit operation. Using wide traces for VIN, VOUT, and GND helps minimize the parasitic
electrical effects along with minimizing the case to ambient thermal impedance.
11.2 Layout Example
Figure 29. TPS22924D Layout Example
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12 Device and Documentation Support
12.1 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
12.2 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
12.3 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
12.4 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
16
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PACKAGE OPTION ADDENDUM
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10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
TPS22924DYZPR
ACTIVE
DSBGA
YZP
6
3000
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 85
DL
TPS22924DYZPT
ACTIVE
DSBGA
YZP
6
250
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 85
DL
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
